CN222029463U - A tunable laser - Google Patents

Abstract

The present application discloses a tunable laser, belonging to the technical field of tunable lasers, comprising a housing, a thermoelectric cooling device, a semiconductor laser gain chip, a wavelength tuning component and a temperature reference component. The housing is sealed to form an airtight chamber. The semiconductor laser gain chip is used as a light source of the tunable laser to emit excitation light. The wavelength tuning component is used to receive the excitation light emitted by the tunable laser and adjust the wavelength. The wavelength tuning component comprises a temperature measuring component, which is used to measure the temperature of the wavelength tuning component so as to feedback and adjust the temperature of the wavelength tuning component so as to adjust the wavelength of the excitation light by controlling the temperature. The temperature reference component is arranged in the closed chamber as a temperature reference benchmark of the temperature measuring component. The present application arranges the temperature reference component and the wavelength tuning component together in an airtight housing. The temperature in the airtight housing is relatively stable, which can effectively avoid the frequency deviation of the tunable laser caused by the change of resistance value due to temperature change and oxidation.

Description

Tunable laser

Technical Field

The application belongs to the technical field of tunable lasers, and particularly relates to a tunable laser.

Background

The frequency of the existing tunable laser (ITLA) is determined by a temperature measuring resistor on a heater (heater) of a thermal tuning filter, and the temperature measuring resistor of the heater is determined by referring to the resistance value of a reference resistor, so that the frequency change of the tunable laser is determined by the ratio of the resistance value of the temperature measuring resistor in a wavelength tuning component to the reference resistor;

however, at present, the reference resistor is located on a circuit board outside the sealed shell, and when the outside is influenced by the external environment temperature or is subjected to self-aging to oxidize, the measurement precision of the reference resistor can be changed, so that the frequency of the tunable laser can be shifted uncontrollably.

Disclosure of utility model

The utility model aims to: the embodiment of the utility model aims to provide a tunable laser and aims to solve the technical problem that the frequency of the tunable laser is shifted due to the change of environmental conditions.

The technical scheme is as follows: the application provides a tunable laser comprising:

the shell is hermetically encapsulated to form a closed cavity;

The thermoelectric refrigerating device is arranged in the closed cavity;

The semiconductor laser gain chip is arranged on the thermoelectric refrigerating device and is used for generating excitation light;

The wavelength tuning component is arranged in the closed cavity and is used for filtering the excitation light; the wavelength tuning component comprises a first thermal tuning filter and a second thermal tuning filter which are arranged based on vernier effect, and a first heating piece, a second heating piece, a first temperature measuring piece and a second temperature measuring piece; the first and second heating elements are configured to heat the first and second thermally tuned filters, respectively; the first and second thermometers are configured to monitor temperatures of the first and second thermally tuned filters, respectively;

And the temperature reference piece is arranged in the closed cavity and provides a reference standard for the first temperature measuring piece and the second temperature measuring piece.

In some embodiments, the temperature reference member includes a reference resistor, the first temperature measuring member and the second temperature measuring member are resistive temperature measuring members, and the reference resistor provides a reference for the first temperature measuring member and the second temperature measuring member.

In some embodiments, the reference resistor includes a first substrate and a reference thermistor disposed on the first substrate, the reference thermistor electrically connected to the housing external control circuit.

In some embodiments, the first substrate is disposed on the thermoelectric refrigeration device.

In some embodiments, the reference thermistor includes a first heating resistor and a first temperature measuring resistor; the first heating resistor and the first temperature measuring resistor are plated on the first substrate.

In some embodiments, the first heating resistor is connected in series with the first temperature measuring resistor and electrically connected to the housing external control circuit.

In some embodiments, the first thermally tuned filter comprises a first optical etalon, the first heating element and the first temperature measurement element being plated on the first optical etalon;

The second thermally tuned filter includes a second optical etalon, the second heating element and the second temperature measurement element being plated on the second optical etalon;

The first substrate is an optical etalon which is the same as the first optical etalon and the second optical etalon, and the first heating resistor, the first temperature measuring resistor, the first heating element, the first temperature measuring element, the second heating element and the second temperature measuring element are the same film thermistor.

In some embodiments, the first thermally tuned filter comprises a first optical etalon and the second thermally tuned filter comprises a second optical etalon;

The wavelength tuning assembly further comprises a second substrate and a third substrate, the first heating element and the first temperature measuring element are plated on the second substrate, and the second heating element and the second temperature measuring element are plated on the third substrate;

The second substrate is arranged in parallel with the light-passing surface of the first optical etalon, and is glued with the first optical etalon into a whole; the third substrate is arranged in parallel with the light passing surface of the second optical etalon, and is glued with the second optical etalon into a whole;

The first substrate, the second substrate and the third substrate are the same substrate; the first heating resistor, the first temperature measuring resistor, the first heating element, the first temperature measuring element, the second heating element and the second temperature measuring element are the same film thermistor.

In some embodiments, the tunable laser further comprises a photonic integrated chip, and the first thermal tuning filter, the second thermal tuning filter, the first heating element, the second heating element, the first temperature measurement element, and the second temperature measurement element are all integrally designed within the photonic integrated chip;

The first substrate and the photonic integrated chip have the same heat conductivity coefficient.

In some embodiments, the wavelength tuning component is disposed on the thermoelectric cooling device with an insulating substrate disposed between the wavelength tuning component and the thermoelectric cooling device.

In some embodiments, the tunable laser further comprises a collimating lens, an isolator, a coupling lens, and a thermistor; the collimating lens is positioned between the semiconductor laser gain chip and the wavelength tuning component and is used for collimating the excitation light; the isolator is positioned at one side of the wavelength tuning component opposite to the collimating lens; the coupling lens is optically coupled to the optical interface of the housing;

The end face of the semiconductor laser gain chip, which is away from the collimating lens, and the input end face of the isolator form a resonant cavity, the semiconductor laser gain chip, the collimating lens and the wavelength tuning component are arranged in the resonant cavity;

The thermistor is arranged on the thermoelectric refrigerating device and is close to the semiconductor laser gain chip.

The beneficial effects are that: compared with the prior art, the application provides a tunable laser, which comprises a shell, a thermoelectric refrigerating device, a semiconductor laser gain chip, a wavelength tuning component and a temperature reference piece, wherein the shell is sealed to form an airtight cavity, the semiconductor laser gain chip is used as a light source of the tunable laser and used for emitting excitation light, the wavelength tuning component is used for receiving the excitation light emitted by the semiconductor laser gain chip and performing wavelength adjustment, and comprises a temperature measuring piece and a heating piece, the temperature of the wavelength tuning component is measured and adjusted, so that the filtering wavelength of the wavelength tuning component is adjusted by controlling the temperature, and the temperature reference piece and the wavelength tuning component are arranged in the same airtight cavity and used as the temperature reference of the temperature measuring piece. According to the application, the temperature reference piece and the wavelength tuning component are arranged in the same airtight shell, the temperature in the airtight shell is relatively stable, and reference temperature deviation caused by environmental temperature change can be effectively avoided, so that the filtering wavelength deviation of the wavelength tuning component is caused by the deviation of the output result of the temperature measuring piece, and the frequency deviation phenomenon of the tunable laser is caused.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic perspective view of a tunable laser according to an embodiment of the present application;

FIG. 2 is a schematic perspective view of a temperature reference member in a tunable laser according to an embodiment of the present application;

Fig. 3 is a schematic perspective view of a wavelength tuning assembly (also showing a heat insulation substrate) according to an embodiment of the present application;

fig. 4 is a schematic perspective view of a wavelength tuning assembly (also showing a heat insulation substrate) according to another embodiment of the present application;

in the figure: 100. a housing; 101. a closed chamber; 200. a thermoelectric refrigeration device; 300. a semiconductor laser gain chip; 400. a wavelength tuning assembly; 410. a first thermally tuned filter; 4101. a first optical etalon; 411. a first heating member; 412. a first temperature measuring member; 420. a second thermally tuned filter; 4201. a second optical etalon; 421. a second heating member; 422. a second temperature measuring member; 430. a second substrate; 440. a third substrate; 450. a heat insulating substrate; 500. a temperature reference; 510. a reference resistor; 511. a first substrate; 512. a reference thermistor; 5121. a first heating resistor; 5122. a first temperature measuring resistor; 600. a collimating lens; 700. an isolator; 800. a coupling lens; 900. a thermistor; 1000. a cat eye lens; 1200. an optical power monitoring assembly; 1210. an MPD mirror; 1220. MPD optical power monitor.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.

Referring to fig. 1 to 4, in the present application, a temperature reference member 500 is disposed in an airtight housing 100, and the airtight environment can effectively avoid the frequency shift of the tunable laser caused by the resistance change of the temperature reference member 500 due to the temperature change. Meanwhile, the heater and the temperature reference member 500 of the wavelength tuning assembly 400 are manufactured by adopting the same structure and process, wherein the heater is used for heating the wavelength tuning assembly 400 and monitoring the temperature of the wavelength tuning assembly 400, the wavelength tuning assembly 400 and the temperature reference member 500 are placed in the same working condition environment, when the heater and the temperature reference member 500 of the wavelength tuning assembly 400 cause resistance drift due to aging, oxidization or other factors, the resistance drift coefficients of the wavelength tuning assembly 400 and the temperature reference member 500 are consistent because the structure and the manufacturing process of the wavelength tuning assembly 400 are the same and are in the same working condition environment, the ratio of the resistance drift coefficients of the wavelength tuning assembly 400 and the temperature reference member 500 is constant, and the tunable laser frequency drift phenomenon caused by the ratio change of the resistance values due to the difference of the resistance drift coefficients can be eliminated.

Referring to fig. 1, in some embodiments, the tunable laser includes a housing 100, and the housing 100 is hermetically sealed, and a closed chamber 101 is formed inside the housing, which can effectively isolate external air and moisture. A thermoelectric cooler (Thermo Electric Cooler, TEC) 200, a semiconductor laser gain chip 300, a wavelength tuning assembly 400, and a temperature reference 500 are disposed within the closed chamber 101. Wherein, the semiconductor laser gain chip 300 is arranged on the thermoelectric refrigerating device 200, and the semiconductor laser gain chip 300 is used for generating excitation light; the wavelength tuning assembly 400 is disposed in a closed chamber for filtering the excitation light to obtain a laser light of a selected wavelength. Specifically, in this embodiment, the wavelength tuning assembly 400 is disposed on the thermoelectric cooling device 200, and an insulating substrate 450 is disposed between the wavelength tuning assembly 400 and the thermoelectric cooling device 200 to form an insulating layer between the wavelength tuning assembly 400 and the thermoelectric cooling device 200.

In this embodiment, the wavelength tuning assembly 400 includes a first thermal tuning filter 410 and a second thermal tuning filter 420 configured based on vernier effect, and a first heating element 411, a second heating element 421, a first temperature measuring element 412, and a second temperature measuring element 422; the first heating member 411 and the second heating member 421 are configured to heat the first thermal tuning filter 410 and the second thermal tuning filter 420, respectively; the first and second thermometers 412, 422 are configured to monitor the temperatures of the first and second thermally tuned filters 410, 420, respectively. The tunable laser of the present application further includes a temperature reference member 500 disposed in the hermetic chamber 101, the temperature reference member 500 providing a reference for the first temperature measuring member 412 and the second temperature measuring member 422.

Further, the tunable laser further includes a collimating lens 600, an isolator 700, a coupling lens 800, and a thermistor 900; the end face of the semiconductor laser gain chip 300, which is away from the collimating lens 600, and the input end face of the isolator 700 form a resonant cavity, and the semiconductor laser gain chip 300, the collimating lens 600 and the wavelength tuning assembly 400 are arranged in the resonant cavity; the thermistor 900 is close to the semiconductor laser gain chip 300, and the thermoelectric refrigeration device 200 and the thermistor 900 stabilize the temperature in the closed chamber 101 of the shell 100 through the circulation control of a circuit, so as to provide proper and stable working temperature for devices (such as the temperature reference piece 500, the wavelength tuning component 400 and the like) in the shell; the collimating lens 600 is located between the semiconductor laser gain chip 300 and the wavelength tuning assembly 400, and is used for collimating the excitation light; the isolator 700 is located on the side of the wavelength tuning assembly 400 opposite the collimating lens 600; the coupling lens 800 is optically coupled to the optical interface of the housing 100.

In order to avoid the phenomenon that the frequency of the tunable laser drifts due to the change of the resistance value of the temperature reference piece 500 caused by the external temperature change, the water vapor erosion and the oxidization, the temperature reference piece 500 and the wavelength tuning assembly 400 are packaged in the closed cavity 101 of the same shell 100, the environment temperature in the hermetically packaged shell 100 is basically kept stable and isolated from the external environment temperature change, and the influence of the external environment temperature change on the temperature reference piece 500 is avoided.

Referring to fig. 1 to 4, in some embodiments, a temperature reference 500 of the present application includes a reference resistor 510, and the temperature measuring element of the wavelength tuning assembly 400 is a resistive temperature measuring element. Referring to fig. 2, in some embodiments, the temperature reference 500 includes a first substrate 511 and a reference thermistor 512. The reference thermistor 512 is disposed on the first substrate 511, and the reference thermistor 512 is connected to a control circuit outside the housing 100, and the first temperature measuring member 412 and the second temperature measuring member 422 in the wavelength tuning assembly 400 perform temperature calculation with reference to the resistance value of the reference thermistor 512. In this embodiment, the reference thermistor 512 may be plated on the first substrate 511, or the reference thermistor 512 may be buried in the first substrate 511, and the first substrate 511 is disposed on the thermoelectric refrigeration device 200.

Specifically, referring to fig. 3 and fig. 4, in some embodiments, a first thermal tuning filter 410 and a second thermal tuning filter 420 are sequentially disposed along a propagation direction of the excitation light, where the first thermal tuning filter 410 and the second thermal tuning filter 420 are disposed in parallel and perpendicular to an optical path of the excitation light, so as to filter the excitation light by utilizing a vernier effect of the two, and select a wavelength to pass according to needs, so as to resonate in a resonant cavity to form laser and output the laser. Specifically, the first thermally tuned filter 410 includes a first optical etalon 4101, the second thermally tuned filter 420 includes a second optical etalon 4201, the first optical etalon 4101 and the second optical etalon 4201 are identical optical etalons, and the light-passing plane of the first optical etalon 4101 and the light-passing plane of the second optical etalon 4201 are perpendicular to the light path of the excitation light.

Referring to fig. 3, a first heating element 411 and a first temperature measuring element 412 are connected to a first optical etalon 4101, the first heating element 411 is used for heating the first optical etalon 4101, and the first temperature measuring element 412 is used for detecting the temperature of the first optical etalon 4101. Specifically, in this embodiment, the first heating element 411 and the first temperature measuring element 412 are plated or buried in the first optical etalon 4101, and the first heating element 411 and the first temperature measuring element 412 are both annular thin film resistors disposed around the light transmitting region of the first optical etalon 4101, where the first heating element 411 is located inside the first temperature measuring element 412 near the light transmitting region. The second heating element 421 and the second temperature measuring element 422 are connected to the second optical etalon 4201, the second heating element 421 is used for heating the second optical etalon 4201, the second temperature measuring element 422 is used for detecting the temperature of the second optical etalon 4201, and in particular, the second heating element 421 and the second temperature measuring element 422 are plated or embedded in the second optical etalon 4201, which is similar to the first optical etalon 4101, and will not be repeated herein.

In some embodiments, the first heating element 411 and the second heating element 421 are respectively connected to a heating circuit outside the housing 100 by a two-wire method, and respectively heat the first optical etalon 4101 and the second optical etalon 4201; the first temperature measuring part 412 and the second temperature measuring part 422 are respectively connected with a temperature measuring circuit outside the casing 100 by a four-wire method, and respectively measure the temperature of the first optical etalon 4101 and the second optical etalon 4201.

Referring to fig. 2, since the resistance of the reference resistor 510 is required to be greater than the maximum resistance of the first temperature measuring element 412 and the second temperature measuring element 422 in the high temperature condition, in this embodiment, the reference thermistor 512 is configured to include the first heating resistor 5121 and the first temperature measuring resistor 5122, and the first heating resistor 5121 and the first temperature measuring resistor 5122 are connected in series for use and connected to the control circuit outside the housing 100. Specifically, the arrangement of the first heating resistor 5121 and the first temperature measuring resistor 5122 on the first substrate 511 is similar to the arrangement of the foregoing temperature measuring element and heating element on the optical etalon, and will not be described herein.

Since the frequency of the tunable laser is determined by the wavelength tuning assembly 400 and the resistance in the wavelength tuning assembly 400 is determined with reference to the value calibrated by the temperature reference 500, there are two reasons for the tunable laser frequency variation: the resistance of the wavelength tuning assembly 400 changes or the resistance of the temperature reference 500 changes, but the tunable laser frequency can be guaranteed to be unchanged as long as the ratio of the resistance in the wavelength tuning assembly 400 to the resistance of the temperature reference 500 is guaranteed to be unchanged. To achieve the above, in some embodiments, the first substrate 511, the first optical etalon 4101, and the second optical etalon 4201 all employ the same optical etalon; the first heating resistor 5121, the first temperature measuring resistor 5122, the first heating element 411, the first temperature measuring element 412, the second heating element 421 and the second temperature measuring element 422 all adopt the same film thermistor, namely the heater of the wavelength tuning assembly 400 and the temperature reference element 500 adopt the same type of device, and meanwhile, the wavelength tuning assembly 400 and the temperature reference element 500 are both positioned in the sealed cavity 101 of the shell 100 and are in the same working condition environment, so that drift coefficients generated by the resistors of the wavelength tuning assembly 400 and the temperature reference element 500 under the conditions of environmental temperature change or device oxidation aging are consistent, the constant resistance ratio of the wavelength tuning assembly 400 and the temperature reference element 500 is ensured, and the tunable laser frequency drift phenomenon caused by the change of the ratio of the resistance values of the wavelength tuning assembly 400 and the temperature reference element 500 due to the different resistance drift coefficients can be eliminated.

Referring to fig. 4, in some embodiments, the present application further provides another wavelength tuning assembly 400, unlike the wavelength tuning assembly 400 in the above embodiments, the wavelength tuning assembly 400 in this embodiment further includes a second substrate 430 and a third substrate 440, the first heating element 411 and the first temperature measuring element 412 are plated on the second substrate 430, and the second heating element 421 and the second temperature measuring element 422 are plated on the third substrate 440; the second substrate 430 is disposed parallel to the light-passing surface of the first optical etalon 4101, and the second substrate 430 is glued to the first optical etalon 4101; the third substrate 440 is disposed parallel to the light-passing surface of the second optical etalon 4201, and the third substrate 440 is glued to the second optical etalon 4201. That is, the first optical etalon 4101 and the second optical etalon 4201 are not integrated with the heating element and the temperature measuring element, but the first heating element 411 and the first temperature measuring element 412 are plated on the second substrate 430 to form a heater, the second heating element 421 and the second temperature measuring element 422 are plated on the third substrate 440 to form another heater, and then the heaters are glued on the optical etalons respectively. The first substrate 511, the second substrate 430 and the third substrate 440 are the same substrates, that is, the temperature reference member 500 uses the same devices as the above heater, so as to ensure that the three substrates have similar resistance drift.

In some embodiments, another embodiment of the present application provides another wavelength tuning assembly 400, unlike the two wavelength tuning assemblies 400 provided in the previous embodiments. In some tunable lasers, including a photonic integrated chip, the first thermal tuning filter 410, the second thermal tuning filter 420, the first heating element 411, the second heating element 421, the first temperature measuring element 412 and the second temperature measuring element 422 are all integrated and designed in the photonic integrated chip; the first substrate 511 of the temperature reference 500 has the same thermal conductivity as the photonic integrated chip. That is, in the tunable laser using the photonic integrated design, the wavelength tuning assembly 400 is designed in the photonic integrated chip, and in order to ensure that the resistance drift of the temperature reference member 500 is synchronized with the resistance drift of the temperature measuring member of the wavelength tuning assembly 400 as much as possible, the first substrate 511 of the temperature reference member 500 is made of a material having a thermal conductivity as close to or as same as that of the photonic integrated chip, and the reference resistor 510 is made of the same material as that of the heating member and the temperature measuring member.

In some embodiments, the tunable laser further includes a cat eye lens 1000, the cat eye lens 1000 being disposed in the optical path between the isolator 700 and the wavelength tuning assembly 400 for adjusting the light beam within the resonant cavity. The planar end of the cat eye lens 1000 converges the light beam, which is coupled to the light outlet on the housing 100 via the isolator 700 and the coupling lens 800.

Referring to fig. 1, in some embodiments, the tunable laser further includes an optical power monitoring component 1200, where the optical power monitoring component 1200 is located in an optical path before the isolator 700 or in an optical path after the isolator 700, and the optical power monitoring component 1200 includes an MPD mirror 1210 and an MPD optical power monitor 1220. The MPD reflector 1210 is located the light path, the light inlet of MPD reflector 1210 is towards the light outlet of wavelength tuning module 400 or the light outlet of isolator 700, the light transmission light outlet of MPD reflector 1210 is towards the light inlet of isolator 700 or the light outlet on casing 100, the light inlet of MPD reflector 1210 is towards the light inlet of MPD optical power monitor 1220, collimated light passes through MPD reflector 1210, there is partial light reflection to MPD optical power monitor 1220, read the current value of MPD optical power monitor 1220, in order to monitor out optical power.

Referring to fig. 1, in some embodiments, to coordinate the heights of the optical paths so that the centers of the devices are all at the same height, the application further discloses a first cushion block, a second cushion block, a third cushion block and a chip substrate, where the first cushion block, the second cushion block and the third cushion block are disposed in the thermoelectric refrigeration device 200; the coupling lens 800 is disposed on the first pad, the isolator 700 is disposed on the second pad, the collimator lens 600 is disposed on the third pad, the semiconductor laser gain chip 300 is disposed on the chip base, and the above devices are all disposed on the thermoelectric cooling device 200 and are located on the same reference plane of the thermoelectric cooling device 200.

The foregoing has outlined some of the more detailed description of the application for a tunable laser in accordance with the embodiments of the present application, wherein specific examples are provided herein to illustrate the principles and implementations of the application and to help understand the method and core concepts of the application; meanwhile, as those skilled in the art will vary in the specific embodiments and application scope according to the ideas of the present application, the present description should not be construed as limiting the present application in summary.

Claims (11)

1. A tunable laser is provided, which is a tunable laser, characterized by comprising the following steps:

A housing (100), the housing (100) being hermetically encapsulated to form a closed chamber (101);

a thermoelectric refrigeration device (200) disposed within the closed chamber (101);

A semiconductor laser gain chip (300) arranged on the thermoelectric refrigerating device (200), wherein the semiconductor laser gain chip (300) is used for generating excitation light;

A wavelength tuning assembly (400) disposed within the closed chamber (101) for filtering the excitation light; the wavelength tuning assembly (400) comprises a first thermal tuning filter (410) and a second thermal tuning filter (420) which are arranged based on vernier effect, and a first heating element (411), a second heating element (421), a first temperature measuring element (412) and a second temperature measuring element (422); the first heating element (411) and the second heating element (421) are configured to heat the first thermally tuned filter (410) and the second thermally tuned filter (420), respectively; the first temperature sensing member (412) and the second temperature sensing member (422) are configured to monitor temperatures of the first thermally tuned filter (410) and the second thermally tuned filter (420), respectively;

And a temperature reference member (500) disposed within the closed chamber (101), the temperature reference member (500) providing a reference for the first temperature measurement member (412) and the second temperature measurement member (422).

2. The tunable laser of claim 1, wherein the temperature reference member (500) includes a reference resistor (510), the first temperature measurement member (412) and the second temperature measurement member (422) being resistive temperature measurement members, the reference resistor (510) providing a reference for the first temperature measurement member (412) and the second temperature measurement member (422).

3. The tunable laser of claim 2, wherein the reference resistor (510) comprises a first substrate (511) and a reference thermistor (512) provided on the first substrate (511), the reference thermistor (512) being electrically connected to a control circuit external to the housing (100).

4. A tuneable laser according to claim 3, wherein the first substrate (511) is placed on the thermoelectric cooling device (200).

5. A tunable laser as claimed in claim 3, wherein the reference thermistor (512) comprises a first heating resistor (5121) and a first temperature measuring resistor (5122); the first heating resistor (5121) and the first temperature measuring resistor (5122) are plated on the first substrate (511).

6. The tunable laser of claim 5, wherein the first heating resistor (5121) is connected in series with the first temperature measuring resistor (5122) and is electrically connected to a control circuit external to the housing (100).

7. The tunable laser of claim 5, wherein the first thermally tuned filter (410) comprises a first optical etalon (4101), the first heating element (411) and the first temperature measurement element (412) being plated on the first optical etalon (4101);

The second thermally tuned filter (420) includes a second optical etalon (4201), the second heating element (421) and the second temperature measurement element (422) being plated on the second optical etalon (4201);

The first substrate (511), the first optical etalon (4101) and the second optical etalon (4201) are the same optical etalon, and the first heating resistor (5121), the first temperature measuring resistor (5122), the first heating element (411), the first temperature measuring element (412), the second heating element (421) and the second temperature measuring element (422) are the same film thermistor.

8. The tunable laser of claim 5, wherein the first thermally tuned filter (410) comprises a first optical etalon (4101), and the second thermally tuned filter (420) comprises a second optical etalon (4201);

The wavelength tuning assembly (400) further comprises a second substrate (430) and a third substrate (440), wherein the first heating element (411) and the first temperature measuring element (412) are plated on the second substrate (430), and the second heating element (421) and the second temperature measuring element (422) are plated on the third substrate (440);

the second substrate (430) is arranged parallel to the light-passing surface of the first optical etalon (4101), and the second substrate (430) and the first optical etalon (4101) are glued into a whole; the third substrate (440) is arranged parallel to the light-passing surface of the second optical etalon (4201), and the third substrate (440) and the second optical etalon (4201) are glued together;

The first substrate (511), the second substrate (430) and the third substrate (440) are the same substrate; the first heating resistor (5121), the first temperature measuring resistor (5122), the first heating element (411), the first temperature measuring element (412), the second heating element (421) and the second temperature measuring element (422) are the same film thermistor.

9. The tunable laser of claim 3, further comprising a photonic integrated chip, wherein the first thermally tuned filter (410), the second thermally tuned filter (420), the first heating element (411), the second heating element (421), the first temperature measurement element (412), and the second temperature measurement element (422) are all integrally designed within the photonic integrated chip;

The first substrate (511) has the same thermal conductivity as the photonic integrated chip.

10. The tunable laser of claim 1, wherein the wavelength tuning assembly (400) is disposed on the thermoelectric cooling device (200), and a thermally insulating substrate (450) is disposed between the wavelength tuning assembly (400) and the thermoelectric cooling device (200).

11. The tunable laser of claim 1, further comprising a collimating lens (600), an isolator (700), a coupling lens (800), and a thermistor (900); the collimating lens (600) is located between the semiconductor laser gain chip (300) and the wavelength tuning component (400) and is used for collimating the excitation light; the isolator (700) is positioned on a side of the wavelength tuning component (400) opposite to the collimating lens (600); the coupling lens (800) is optically coupled to an optical interface of the housing (100);

The semiconductor laser gain chip (300) is away from the end face of the collimating lens (600) and the input end face of the isolator (700) to form a resonant cavity, and the semiconductor laser gain chip (300), the collimating lens (600) and the wavelength tuning component (400) are arranged in the resonant cavity;

the thermistor (900) is arranged on the thermoelectric refrigeration device (200) and is close to the semiconductor laser gain chip (300).