CN221877247U - Silicon crystal preparation system - Google Patents

Abstract

The utility model relates to a silicon crystal preparation system, which comprises a gasification furnace, a condensing device, a pipeline and an air inlet device. The gasification furnace comprises a furnace body and a plasma generating component. The furnace body has the feed inlet and follows the heating channel of first straight line setting, and plasma generation subassembly includes first electrode bar and second electrode bar, and the inside at heating channel is all established to the first work end of first electrode bar and the second work end of second electrode bar, and is located between heating channel's input and the feed inlet, and condensing equipment intercommunication sets up the output at heating channel. The input end of the air inlet device is communicated with the condensing device through a pipeline, and the output end of the air inlet device is communicated with the input end of the heating channel. According to the silicon crystal preparation system, the high-temperature gas is generated by utilizing the plasma technology to gasify and decompose the materials input by the feed inlet, so that the silicon crystal preparation system can replace a heat source generated by burning fossil fuel, realize zero emission in the silicon crystal preparation process, and is beneficial to improving the quality of silicon crystals.

Description

Silicon crystal preparation system

Technical Field

The utility model relates to the technical field of silicon crystal preparation, in particular to a silicon crystal preparation system.

Background Art

The existing silicon crystal smelting technology is to heat the silicon crystal to a molten state, remove impurities on the surface of the molten liquid, and then cool it to obtain silicon crystal material of the desired concentration.

However, the conventional method of preparing silicon crystals is to use fossil fuel combustion to provide heat source. During the combustion of fossil fuels, air and oxygen are required, which will inevitably produce a large amount of smoke and nitrogen oxides _NOx . The fuel itself will also produce various waste gases such as _SO2 and _CO2 due to different components. In addition, the use of fossil fuels to provide heat source has a low thermal efficiency of only about 35%-40%, and consumes a large amount of resources. Therefore, the existing silicon crystal smelting technology is not only prone to cause a great waste of resources, but also produces a large amount of fuel waste residue.

Utility Model Content

The purpose of the utility model is to at least solve the problem that the existing silicon crystal preparation has poor resource utilization effect and easily produces a large amount of fuel waste residue. This purpose is achieved through the following technical solutions:

The utility model proposes a silicon crystal preparation system, including a gasification furnace, a condensing device, a pipeline and an air intake device; the gasification furnace includes:

A furnace body, the furnace body having a feed inlet and a heating channel arranged along a first straight line, the feed inlet being communicated with the heating channel, and the feed inlet being arranged above the heating channel;

A plasma generating assembly, the plasma generating assembly comprising a first electrode rod and a second electrode rod, the first electrode rod having a first working end, the second electrode rod having a second working end, the first working end and the second working end being arranged inside the heating channel and between the input end of the heating channel and the feed port, and a discharge distance being able to be maintained between the first working end and the second working end;

The condensing device is connected to the output end of the heating channel, and the condensing device is used to cool the mixed gas output from the gasification furnace and output columnar crystals;

The input end of the air intake device is connected to the condensing device through the pipeline, and the output end of the air intake device is connected to the input end of the heating channel. The air intake device is used to transport working gas to the heating channel.

The silicon crystal preparation system proposed in the utility model includes a pipeline, a condensing device, an air intake device and a gasification furnace. By arranging a plasma generating assembly including a first electrode rod and a second electrode rod on the furnace body of the gasification furnace, and by inputting direct current into the first electrode rod and the second electrode rod, the gas between the first electrode rod and the second electrode rod can be transformed into a plasma state, and at this time, the gas in the plasma state can be mixed with the working gas introduced from the air intake device to form a high-temperature gas, and the high-temperature gas can gasify and decompose the material input from the feed port, and finally input into the condensing device to generate a high-purity crystal material. Among them, the high-temperature gas generated by the cooperation of the plasma generating assembly and the air intake device can replace the heat source generated by the combustion of fossil fuels, which helps to achieve zero emission of carbon dioxide and other waste gases in the gasification process, reduce pollution to the environment, and also make the silicon crystal preparation system have good thermal conversion efficiency, which helps to improve the utilization effect of resources.

At the same time, by using high-temperature gas to gasify and decompose the materials input from the feed port, and using the condensation device to generate columnar crystals, it helps to improve the production efficiency of silicon crystals and improve the quality of products. In addition, by setting up a pipeline to distribute the gas output from the condenser back to the gasifier, it helps to achieve the recycling of working gas, reduce energy consumption and carbon emissions, and has significant significance for achieving carbon neutrality goals in industrial production processes.

In addition, the silicon crystal preparation system according to the utility model may also have the following additional technical features:

In some embodiments of the present utility model, the first electrode rod and the second electrode rod are both arranged on the furnace body along a second straight line, and the first straight line is perpendicular to the second straight line;

The plasma generating assembly further comprises a delivery mechanism, the delivery mechanism comprising:

A clamping assembly, the clamping assembly being used to clamp the first electrode rod and/or the second electrode rod at a portion outside the furnace body;

A driving member, wherein the driving member is used to drive the clamping assembly to move along the second straight line.

In some embodiments of the present invention, the clamping assembly comprises:

A connecting plate, the connecting plate being fixedly arranged at the power output end of the driving member;

a first clamping member, the first clamping member being arranged on the connecting plate;

A second clamping member is movably disposed on the connecting plate.

In some embodiments of the utility model, two sealing assemblies are arranged on the furnace body, the first electrode rod passes through one of the two sealing assemblies, and the second electrode rod passes through the other of the two sealing assemblies, and the sealing assemblies include:

a first connecting seat, wherein the first connecting seat is arranged on the furnace body, and the first electrode rod or the second electrode rod is passed through the first connecting seat;

A protective member, the protective member being arranged between an inner wall of the first connecting seat and the first electrode rod or the second electrode rod;

a second connection seat, the second connection seat is fixedly connected to the first connection seat and sleeved on the first electrode rod or the second electrode rod, and the second connection seat is used to fix the protective member;

A sealing member is arranged inside the second connecting seat and located between the second connecting seat and the first electrode rod or the second electrode rod.

In some embodiments of the present invention, the inner wall of the furnace body is provided with refractory material.

In some embodiments of the utility model, a coolant inlet and a coolant outlet are provided on the furnace body, a cooling channel is provided between the coolant inlet and the coolant outlet, and the cooling channel is provided inside the refractory material.

In some embodiments of the present invention, the gasifier further comprises a constraint mechanism, and the constraint mechanism comprises:

An air supply component, the air supply component includes an air supply piece arranged along the circumference of the heating channel, the air supply piece has an air supply port arranged along the extension direction of the heating channel, the number of the air supply components is two, the air supply pieces of the two air supply components are respectively arranged at the two ends of the heating channel, and the air supply ports of the two air supply pieces are arranged opposite to each other.

An air supply component is arranged outside the furnace body and is used to supply air to the air supply component.

In some embodiments of the present invention, the condensing device comprises:

Condenser, the number of the condensers is multiple, and they are sequentially connected and arranged at the output end of the heating channel.

In some embodiments of the present invention, the first pyrolysis device further has an air blowing port, and the silicon crystal preparation system further includes:

A preheating device, wherein the preheating device comprises a feed chamber and a preheating chamber, wherein the feed chamber is connected to the feed port, and the feed chamber is used to output materials to the feed port; the preheating chamber is sleeved on the outside of the feed chamber, and the preheating chamber is connected and arranged between the condensing device and the air intake device.

In some embodiments of the present invention, the silicon crystal preparation system further includes:

A separation device having a first inlet, a first outlet and a second outlet, wherein the first inlet is connected to the output end of the condensing device, and the first outlet is connected to the preheating chamber through the pipeline for outputting the material in the mixed gas.

BRIEF DESCRIPTION OF THE DRAWINGS

By reading the detailed description of the preferred embodiment below, various other advantages and benefits will become clear to those of ordinary skill in the art. The accompanying drawings are only used for the purpose of illustrating the preferred embodiment and are not to be considered as limiting the present invention. Moreover, the same reference numerals are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

FIG1 is a schematic structural diagram of a silicon crystal preparation system shown in an embodiment of the present utility model;

FIG2 is a schematic structural diagram of a gasifier shown in an embodiment of the present invention;

FIG3 is a schematic structural diagram of the gasifier shown in an embodiment of the present utility model from another perspective;

Fig. 4 is a schematic cross-sectional view taken along the C-C direction of Fig. 3;

FIG5 is a schematic diagram of a second structure of a gasifier shown in an embodiment of the present utility model;

FIG6 is a schematic cross-sectional view of a second gasifier in the direction A-A of FIG2 shown in an embodiment of the present invention;

Fig. 7 is a cross-sectional schematic diagram along the B-B direction of Fig. 2;

FIG8 is a schematic diagram of the local structure of D in FIG4;

FIG. 9 is a schematic structural diagram of a preheating device shown in an embodiment of the present utility model.

The symbols in the accompanying drawings represent the following:

100, gasification furnace; 200, condensation device; 300, separation device; 400, preheating device; 500, pipeline; 600, air intake device;

1. Furnace body; 101. Air inlet; 102. Air outlet; 103. Heating channel; 104. Feed inlet; 105. Installation platform;

21. a first electrode rod; 22. a second electrode rod;

31. first driving member; 32. first clamping assembly; 321. connecting plate; 322. first clamping member; 323. second clamping member; 324. first cylinder; 325. fixing frame; 326. connecting frame; 327. return spring; 33. second driving member; 34. second clamping assembly;

4. Sealing assembly; 41. First connecting seat; 411. Baffle; 42. Protective member; 43. Second connecting seat; 431. Sealing body; 432. Support plate; 433. Sealing cover; 44. Sealing member; 441. Sleeve; 442. High temperature resistant skeleton oil seal; 45. Connecting member;

51. Air supply part; 52. Connecting pipe; 53. Air inlet pipe;

6. Refractory materials;

71. Coolant inlet; 72. Cooling channel; 73. Coolant outlet;

81. Condenser; 82. Container; 83. Storage room;

91. Feed chamber; 92. Preheating chamber; 93. Inlet; 94. Outlet.

DETAILED DESCRIPTION

The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

It should be understood that the terms used herein are only for the purpose of describing specific example embodiments and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "an" and "said" as used herein may also be meant to include plural forms. The terms "include", "comprise", "contain", and "have" are inclusive, and therefore specify the existence of stated features, steps, operations, elements and/or parts, but do not exclude the existence or addition of one or more other features, steps, operations, elements, parts, and/or combinations thereof. The method steps, processes, and operations described herein are not interpreted as necessarily requiring them to be performed in the specific order described or illustrated, unless the execution order is clearly indicated. It should also be understood that additional or alternative steps may be used.

Although the terms first, second, third, etc. can be used in the text to describe multiple elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates, terms such as "first", "second" and other numerical terms do not imply order or sequence when used in the text. Therefore, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section without departing from the teaching of the example embodiments.

For ease of description, spatial relative terms may be used herein to describe the relationship of one element or feature relative to another element or feature as shown in the figure, such as "inside", "outside", "inner side", "outer side", "below", "below", "above", "above", etc. Such spatial relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figure. For example, if the device in the figure is turned over, then the elements described as "below other elements or features" or "below other elements or features" will subsequently be oriented as "above other elements or features" or "above other elements or features". Therefore, the example term "below..." can include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or in other directions) and the spatial relative descriptions used in the text conform to the corresponding interpretation.

As shown in Figures 1 to 9, according to the implementation mode of the utility model, a silicon crystal preparation system is proposed. The silicon crystal preparation system utilizes high-temperature gas generated by plasma technology and uses it as a heat source instead of fossil fuel combustion to gasify and decompose the material, and then utilizes condensation technology to generate high-purity crystal materials. This helps to solve the problems of poor resource utilization and easy generation of a large amount of fuel waste residue in the existing silicon crystal preparation.

In terms of overall design, the silicon crystal preparation system includes a gasifier 100, a condensing device 200, a pipeline 500 and an air intake device 600. Among them, the gasifier 100 includes a furnace body 1 and a plasma generating assembly. The furnace body 1 has a feed port 104 and a heating channel 103 arranged along a first straight line. The feed port 104 is connected to the heating channel 103, and the feed port 104 is arranged above the heating channel 103. The plasma generating assembly includes a first electrode rod 21 and a second electrode rod 22. The first electrode rod 21 has a first working end, and the second electrode rod 22 has a second working end. The first working end and the second working end are arranged inside the heating channel 103 and are located between the input end of the heating channel 103 and the feed port 104. The first working end and the second working end can maintain a discharge distance between them;

At the same time, the condensing device 200 is connected to the output end of the heating channel 103, and the condensing device 200 is used to cool the mixed gas output by the gasifier 100 and output columnar crystals. The input end of the air intake device 600 is connected to the condensing device 200 through the pipeline 500, and the output end of the air intake device 600 is connected to the input end of the heating channel 103, and the air intake device 600 is used to transport the working gas to the heating channel 103.

The silicon crystal preparation system proposed in the utility model is provided with a plasma generating assembly including a first electrode rod 21 and a second electrode rod 22 on the furnace body 1 of the gasification furnace 100. By inputting direct current into the first electrode rod 21 and the second electrode rod 22, the gas between the first electrode rod 21 and the second electrode rod 22 is transformed into a plasma state. At this time, the gas in the plasma state can be mixed with the working gas introduced from the air inlet device 600 to form a high-temperature gas. The high-temperature gas can gasify and decompose the material input from the feed port 104, and finally be input into the condensation device 200 to generate a high-purity crystal material. Among them, the cooperation of the plasma generating assembly and the air inlet device 600 replaces the heat source generated by the combustion of fossil fuels, realizes zero emission of carbon dioxide and other waste gases in the gasification process, reduces pollution to the environment, and also enables the silicon crystal preparation system to have a good thermal conversion efficiency and improve the utilization effect of resources.

At the same time, by using high-temperature gas to gasify and decompose the material input from the feed port 104, and using the condensing device 200 to generate columnar crystals, it is helpful to improve the production efficiency of silicon crystals and improve the quality of products. In addition, by setting up a pipeline 500 to distribute the gas output from the condenser 81 back to the gasification furnace 100, it is helpful to realize the recycling of working gas, reduce energy consumption and carbon emissions, and have significant significance for achieving the goal of carbon neutrality in the industrial production process.

Specifically, as shown in Fig. 2 to Fig. 6, the furnace body 1 has an air inlet 101, an air outlet 102, a feed port 104 and a heating channel 103, wherein the heating channel 103 is connected between the air inlet 101 and the air outlet 102, and the working gas output by the air inlet device 600 described below can flow sequentially through the air inlet 101, the heating channel 103 and the air outlet 102 of the furnace body 1. In this embodiment, the heating channel 103 is arranged along a first straight line, and preferably, the first straight line is arranged horizontally.

At this time, the feed port 104 is connected to the heating channel 103 and is arranged above the heating channel 103. The feed port 104 is used to communicate with the preheating device 400, and the preheating device 400 can input materials into the heating channel 103. In this embodiment, the feed port 104 is oriented in a vertical direction and is perpendicular to the first straight line, that is, the feed port 104 is arranged perpendicular to the extension direction of the heating channel 103. It should be noted that the above-mentioned material is a raw material for preparing silicon crystals. Preferably, the raw material is a prepared powdery mixture.

It should be understood that the furnace body 1 can be made of carbon steel, low alloy steel or high alloy steel, and the specific material of the furnace body 1 can be determined by the heating temperature required to be achieved by the gasifier 100, which will not be described in detail here.

As shown in FIGS. 4 and 5 , the furnace body 1 is provided with a first electrode rod 21 and a second electrode rod 22, and the first electrode rod 21 and the second electrode rod 22 are arranged opposite to each other. Specifically, the first electrode rod 21 and the second electrode rod 22 are both provided on the main body of the furnace body 1, and the first electrode rod 21 and the second electrode rod 22 are both located on the second straight line. In this embodiment, the second straight line is a vertical line, and at this time, the first straight line is perpendicular to the first straight line. As shown in the combined figure, the first electrode rod 21 is arranged at the top of the main body, and the second electrode rod 22 is arranged at the bottom of the main body. Parts of the first electrode rod 21 and parts of the second electrode rod 22 are both inserted into the heating channel 103, and are arranged at intervals inside the heating channel 103. Specifically, the first electrode rod 21 has a first working end, and the second electrode rod 22 has a second working end, and the first working end and the second working end are arranged inside the heating channel 103, and the first working end and the second working end can maintain a discharge distance between them.

It should be understood that the first electrode rod 21 and/or the second electrode rod 22 can move along the first straight line, so as to achieve the approach or distance between the first electrode rod 21 and the second electrode rod 22, that is, the first electrode rod 21 and the second electrode rod 22 are movably arranged on the furnace body. Such an arrangement enables the heat source supply device to adjust the discharge distance between the first working end and the second working end, and when direct current is passed through the first electrode rod 21 and the second electrode rod 22, to achieve regulation of the plasma state conversion rate of the gas, thereby achieving temperature adjustment between the first working end and the second working end.

In addition, in the present embodiment, the first electrode rod 21 and the second electrode rod 22 are both connected to a current supply device disposed outside the furnace body, and the current supply device is not shown in the figure. Specifically, the first electrode rod 21 also has a first connection end, and the second electrode rod 22 also has a second connection end. The first connection end is disposed opposite to the first working end, and the second connection end is disposed opposite to the second working end. Preferably, the positive pole and the negative pole of the current supply device are respectively connected to the first connection end of the first electrode rod 21 and the second connection end of the second electrode rod 22, and direct current is output to the first electrode rod 21 and the second electrode rod 22. The current supply device can be used to adjust the size of the input direct current, and to regulate the temperature between the first working end and the second working end in accordance with the different discharge distances.

It should be further understood that the plasma generating assembly also includes a delivery mechanism, which is used to drive the movement of the first electrode rod 21 and the second electrode rod 22 to achieve the above-mentioned first electrode rod 21 and the second electrode rod 22 to move closer or farther away. Specifically, the delivery mechanism includes a clamping assembly and a driving member, wherein the clamping assembly is used to clamp the first electrode rod 21 and/or the second electrode rod 22 located outside the furnace body 1, and the driving member is used to drive the clamping assembly to move along the first straight line. In this embodiment, the number of delivery mechanisms is two, and the structures of the two delivery mechanisms are the same. For ease of description, the two delivery mechanisms are respectively referred to as the first delivery mechanism and the second delivery mechanism. Among them, the first delivery mechanism is used to clamp and drive the first electrode rod 21 to move, and the second delivery mechanism is used to clamp and drive the second electrode rod 22 to move.

Specifically, the first delivery mechanism includes a first driving member 31 and a first clamping assembly 32, and correspondingly, the second delivery mechanism includes a second driving member 33 and a second clamping assembly 34. In this embodiment, the first driving member 31 is connected to the furnace body 1, and the first clamping assembly 32 is arranged at the output end of the first driving member 31. The second driving member 33 is arranged on the same mounting base as the furnace body 1, and the second clamping assembly 34 is arranged at the output end of the second driving member 33. As a preferred embodiment, a mounting platform 105 is arranged on the side wall of the furnace body 1, the first driving member 31 is mounted on the mounting platform 105, and the second driving member 33 is fixedly arranged on the ground. Among them, the first driving member 31 and the second driving member 33 are both arranged as hydraulic cylinders. As a preferred embodiment, the first driving member 31 and the second driving member 33 are arranged to move synchronously, so that the first electrode rod 21 and the second electrode rod 22 can be moved closer to each other or farther away from each other, which helps to further improve the control accuracy of the delivery mechanism on the discharge distance between the first electrode rod 21 and the second electrode rod 22.

In this embodiment, since the first clamping assembly 32 and the second clamping assembly 34 have the same structure, the first clamping assembly 32 is taken as an example for description. The first clamping assembly 32 includes a connecting plate 321, a first clamping member 322, and a second clamping member 323, wherein the connecting plate 321 is fixedly arranged at the power output end of the first driving member 31. The first clamping member 322 is arranged on the connecting plate 321, and the second clamping member 323 is movably arranged on the connecting plate 321. The second clamping member 323 is arranged to be movable, so that the second clamping member 323 can cooperate with the first clamping member 322 to achieve clamping and loosening of the first electrode rod 21.

Specifically, the connecting plate 321 is connected to the power output end of the first driving member 31 by bolts, a fixing frame 325 is connected to the first connecting plate 321 by bolts, and the fixing frame 325 is fixedly mounted with the first clamping member 322 and the first cylinder 324, wherein the output end of the first cylinder 324 is fixedly connected to the second clamping member 323 by the connecting frame 326, and at this time, a return spring 327 is arranged between the fixing frame 325 and the connecting frame 326 to cooperate with the first cylinder 324 to ensure the clamping effect of the first clamping assembly 32 on the second clamping member 323. By arranging the first cylinder 324 to drive the second clamping member 323 to move, the distance between the first clamping member 322 and the second clamping member 323 can be adjusted, thereby facilitating the clamping and fixing of the first electrode rod 21 by the first clamping assembly 32, and ensuring that the first electrode rod 21 will not move during actual use.

As shown in Fig. 4, Fig. 5 and Fig. 8, two sealing components are arranged on the furnace body 1, and the first electrode rod 21 passes through one of the two sealing components, and the second electrode rod 22 passes through the other of the two sealing components. In this embodiment, the working gas output from the air inlet channel to the inside of the furnace body 1 needs to be mixed with the plasma gas between the first working end and the second working end, and output from the gas outlet 102 after forming the target gas. Therefore, a sealing component 4 is arranged at the connection between the first electrode rod 21 and/or the second electrode rod 22 and the furnace body 1, which can prevent the gas flow in the furnace body 1 from escaping, reduce the loss of high-temperature gas, and ensure the heat conversion rate of the gasifier 100. Preferably, the two sealing components are arranged at the top and bottom of the main body 12, respectively. In addition, the arrangement of the sealing component also helps to prevent external gas or substances from entering the heating channel, thereby improving the safety of the furnace body when in use.

At this time, for the convenience of description, the sealing assembly located at the top of the furnace body 1 is described as an example. Among them, the sealing assembly 4 includes a first connection seat 41, a protective member 42, a second connection seat 43 and a sealing member 44. The first connection seat 41 is arranged on the main body, and the first electrode rod 21 is inserted into the first connection seat 41. Specifically, a mounting opening is opened on the furnace body 1, the first connection seat 41 is welded on the mounting opening, and the first electrode rod 21 passes through the first connection seat 41. As shown in FIG8, a baffle 411 is arranged on the first connection seat 41, and the above-mentioned protective member 42 is arranged inside the first connection seat 41 and one end abuts against the baffle 411, and at this time, the second connection seat 43 is fixedly connected to the first connection seat 41, and abuts against the other end of the protective member 42 to fix the protective member 42 inside the first connection seat 41. In this embodiment, the protective member 42 is an electrode insulating sleeve, which helps to prevent direct current from flowing to the furnace body 1 through the first electrode rod 21, and helps to improve the safety of the furnace body 1 in use.

In this embodiment, the second connection seat 43 is connected to the first connection seat 41 by bolts, and a connection member 45 is provided between the second connection seat 43 and the first connection seat 41. The connection member 45 can effectively ensure the sealing of the connection between the second connection seat 43 and the first connection seat 41, which helps to reduce the loss of gas. The connection member 45 can be set as a rubber member.

Still as shown in FIG8 , the second connection seat 43 is sleeved on the first electrode rod 21. Specifically, the second connection seat 43 includes a seat body 431 and a sealing cover 433. The seat body 431 is used to be fixedly connected with the first connection seat 41, and the first end of the seat body 431 abuts against the protective member 42, and the second end of the seat body 431 is provided with a sealing cover 433. At the same time, a support plate 432 is provided inside the seat body 431, and at this time, the support plate 432, the inner wall of the seat body 431, and the sealing cover 433 cooperate to form an accommodation space, and the above-mentioned sealing member 44 is fixedly provided in the accommodation space and abuts against the peripheral surface of the first electrode rod 21. In this embodiment, the sealing member 44 includes a plurality of sleeves 441 and high temperature resistant skeleton oil seals 442 of different lengths, wherein the sleeves 441 are in contact with the support plate 432 and the sealing cover 433, and a high temperature resistant skeleton oil seal 442 is arranged between two adjacent sleeves 441. Such an arrangement helps to improve the sealing effect of the sealing assembly 4, reduce gas loss, and ensure the feasibility of the insertion and movement of the first electrode rod 21.

Still as shown in FIG. 1 and FIG. 2 , the input end of the air intake device 600 is connected to the air outlet 102 of the furnace body 1 , and the output end of the air intake device 600 is connected to the air intake 101 arranged on the furnace body 1 , so that the supply gas output from the air outlet 102 and used multiple times is reintroduced into the furnace body 1 , realizing the recycling of the working gas, which helps to further reduce the emission of carbon dioxide. In this embodiment, the air intake device is configured as a fan. Preferably, the output power of the fan is adjustable, and the input wind speed of the working gas can be adjusted as needed.

Here, it should be noted that the working gas can be set to one or a mixed gas of nitrogen or an inert gas, so as to ensure that the working gas cannot react with the material in a high temperature environment.

In some embodiments of the utility model, the gasifier 100 further includes a restraining mechanism to effectively restrain the working gas in the heating channel 103, so as to avoid the occurrence of airflow or heat dissipation, which helps to further improve the utilization efficiency of the gasifier 100. In this embodiment, the restraining mechanism includes an air supply component and an air supply component, wherein the air supply component is used to output the working gas to the air supply component, and the air supply component is used to restrain the working gas mixed with plasma at the center of the heating channel 103.

Specifically, as shown in FIG5 , the air supply assembly includes an air inlet pipe 53, a connecting pipe 52 and an air supply member 51. There are multiple air inlet pipes 53 and they are all arranged on the furnace body 1. The output end of each air inlet pipe 53 is connected with a connecting pipe 52, which extends to the interior of the furnace body 1 and is connected with the air supply member 51. At this time, the air supply member 51 is arranged along the circumference of the heating channel 103, and the air supply member 51 has an air supply port arranged along the extension direction of the heating channel 103. In this embodiment, the number of the air inlet pipes 53 is six, and accordingly, the number of the connecting pipes 52 is six. At the same time, the air supply member 51 is an integrated structure, and the air supply port is arranged along the circumference of the heating channel 103.

It should be understood that the gasifier has two air supply components, and the air supply parts 51 of the two air supply components are respectively arranged at the two ends of the heating channel 103, and the air supply ports of the two air supply parts 51 are arranged relatively. When the air supply component inputs working gas to the air supply component, it can form opposing high-pressure airflows in the circumferential direction of the heating channel 103, which helps to limit the flow direction of the gas in the heating channel 103 and reduce heat loss. At the same time, it can also prevent the inner wall of the furnace body 1 from being eroded by high-temperature gas, ensure that the inner wall of the furnace body 1 is not burned, and improve the service life and safety of the equipment. Moreover, the constraint mechanism can also cooperate with the delivery mechanism and the air intake device to conduct heat to the working gas input by the air intake component, and quickly neutralize and regulate the temperature of the target gas, so as to achieve the set target gas The required temperature and flow rate in the shortest time.

Here, it should be noted that the working gas inputted into the furnace body 1 by the air supply assembly and the working gas flowing in the heating channel 103 are the same type of gas.

As shown in Fig. 4 to Fig. 6, a refractory material 6 is provided on the inner wall of the furnace body 1, which helps to protect the inner wall of the furnace body 1 and prevent the high-temperature and high-speed target gas from burning the furnace body 1 due to excessive temperature. At the same time, it can also ensure that the heat in the furnace is not lost and improve the utilization efficiency. Among them, the refractory material 6 is a high-temperature resistant material or a composite of multiple high-temperature resistant materials. Specifically, the refractory material 6 is set as a graphite refractory material or a corundum brick or a high-alumina brick refractory material.

At this time, the cooling assembly includes a coolant inlet 71 and a coolant outlet 73 opened on the furnace body, and a cooling channel 72 is arranged between the coolant inlet 71 and the coolant outlet 73. The cooling channel 72 is arranged inside the refractory material 6. Preferably, the cooling channel 72 is spirally arranged in a spiral structure and is arranged around the heating channel 103 as the center. It is helpful to cool down the heat conducted from the inner wall of the refractory material 6, thereby preventing the shell temperature of the furnace body 1 from exceeding the standard, and playing a role of cooling protection. In this embodiment, the material of the cooling channel 72 can be selected from a copper tube or a stainless steel tube, S stainless steel tube, so as to enhance the thermal conductivity and service life of the cooling channel 72, and it is not easy to produce rust.

The gasifier 100 of the present application can stably and quickly convert the gas between the first electrode rod 21 and the second electrode rod 22 into a plasma state by supplying direct current to the first electrode rod 21 and the second electrode rod 22, and mix it with the working gas input from the air inlet 101. The mixed working gas can be used as a heat source to replace the heat source generated by the combustion of fossil fuels to gasify and decompose the material (silicon crystal raw material). It helps to eliminate environmental pollution caused by fuel problems and achieve zero carbon dioxide emissions at the source.

Still as shown in FIG. 1 , the condensing device 200 includes a condenser 81, a container 82 and a storage chamber 83. The condenser 81 has an input port, a first output port and a second output port, the first input port is used to input a mixed gas, the first output port is used to output an uncooled mixed gas, and the second output port is used to output the condensed rod-shaped silicon crystals. In this embodiment, there are multiple condensers 81, and the multiple condensers 81 are sequentially connected and arranged at the output end of the heating channel 103. Preferably, the cooling energy effects of the multiple condensers 81 are different. With such an arrangement, polycrystalline silicon rods or single silicon crystal rods can be generated at the same time as needed to improve the production efficiency of the silicon crystal preparation system.

Here, it should be noted that the condenser 81 adopts conventional condensation technology and utilizes the different states of different substances at different temperatures to make the silicon accumulate and form columnar crystals according to preset requirements, and finally output from the second output port into the receiving container 82.

At this time, the container 82 is an existing storage device for storing polycrystalline silicon rods or monocrystalline silicon rods. At the same time, a storage room 83 is also provided to classify and store the polycrystalline silicon rods or monocrystalline silicon rods in the container 82 to prevent the use of the condenser 81 from being affected by the accumulation of the polycrystalline silicon rods or monocrystalline silicon rods.

Still as shown in FIG. 1 , the silicon crystal preparation system further includes a separation device 300. The separation device 300 has a first inlet, a first outlet, and a second outlet. The first inlet is connected to the output end of the condensing device 200, the first outlet is connected to the preheating chamber 92 through the pipeline 500, and the second outlet is used to output the material in the mixed gas. The separation device 300 is arranged at the output end of the condensing device 200, which can separate the uncondensed material in the mixed gas, prevent the remaining material from entering the pipeline, and depositing in the pipeline, the air intake device 600 or the preheating device 400 described below, thereby causing a waste of resources.

Here, it should be noted that the material output by the above-mentioned separation device 300 includes uncondensed silicon and impurities in the raw material. At this time, the separation device 300 can use conventional condensation technology to separate gas and solid, or use chemical reactions to consume the gasified silicon or impurities. Of course, no matter which separation method is used, a separate receiving device needs to be set at the second outlet.

Still as shown in FIG. 1 , the silicon crystal preparation system further includes a preheating device 400, which has a feed chamber 91 and a preheating chamber 92, wherein the feed chamber 91 is connected to the feed port 104, and the feed chamber 91 is used to output materials to the feed port 104. In this embodiment, the first end of the feed chamber 91 is connected to the feed port 104, and the second end is connected to an external batching device, which is not shown in the figure. The batching device can deliver the prepared materials to the feed port 104 in a quantitative or constant speed through the feed chamber 91 of the preheating device 400. Of course, the second end of the feed chamber 91 can be closed. At this time, it is necessary to set the prepared materials in the feed chamber 91 in advance, and set a control part to control the delivery of the materials. The control part can be set as a blocking plate, and the blocking plate is movably set in the feed chamber 91, and the blocking plate can intermittently ensure the connection between the feed chamber 91 and the feed port 104.

At this time, the preheating chamber 92 is sleeved on the outside of the feed chamber 91, and the preheating chamber 92 is connected to the condensing device 200 and the air intake device 600 through the pipeline 500. Preferably, the preheating device 400 also includes an inlet 93 and an outlet 94. Among them, the inlet 93 is connected to the condensing device 200 through the pipeline 500 and the separation device 300, and the outlet 94 is connected to the air intake device 600 through the pipeline 500. The setting of the preheating chamber 92 can preheat the material before entering the feed port 104, and the preheating chamber 92 is connected and arranged between the condensing device 200 and the air intake device 600, which can make full use of the waste heat of the mixed gas, improve the thermal conversion efficiency of the silicon crystal preparation system, and ensure the utilization effect of resources.

The silicon crystal preparation method of this embodiment uses plasma generation technology to generate high-temperature gas and use it as a heat source, replacing traditional fossil fuels, reducing the demand for fossil fuels, and thus reducing carbon emissions at the source. At the same time, the closed-loop connection method further reduces energy consumption and carbon emissions, which is of great significance to achieving the goal of carbon neutrality in industrial production processes.

The above is only a preferred specific implementation of the utility model, but the protection scope of the utility model is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the utility model should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims (10)

1. A silicon crystal preparation system, characterized in that it includes a gasifier, a condensing device, a pipeline and an air intake device; the gasifier includes: A furnace body, the furnace body having a feed inlet and a heating channel arranged along a first straight line, the feed inlet being communicated with the heating channel, and the feed inlet being arranged above the heating channel; A plasma generating assembly, the plasma generating assembly comprising a first electrode rod and a second electrode rod, the first electrode rod having a first working end, the second electrode rod having a second working end, the first working end and the second working end being arranged inside the heating channel and between the input end of the heating channel and the feed port, and a discharge distance being able to be maintained between the first working end and the second working end; The condensing device is connected to the output end of the heating channel, and the condensing device is used to cool the mixed gas output from the gasification furnace and output columnar crystals; The input end of the air intake device is connected to the condensing device through the pipeline, and the output end of the air intake device is connected to the input end of the heating channel. The air intake device is used to transport working gas to the heating channel. 2. The silicon crystal preparation system according to claim 1, characterized in that the first electrode rod and the second electrode rod are both arranged on the furnace body along a second straight line, and the first straight line is perpendicular to the second straight line; The plasma generating assembly further comprises a delivery mechanism, the delivery mechanism comprising: A clamping assembly, the clamping assembly being used to clamp the first electrode rod and/or the second electrode rod at a portion outside the furnace body; A driving member, wherein the driving member is used to drive the clamping assembly to move along the second straight line. 3. The silicon crystal preparation system according to claim 2, characterized in that the clamping assembly comprises: A connecting plate, the connecting plate being fixedly arranged at the power output end of the driving member; a first clamping member, the first clamping member being arranged on the connecting plate; A second clamping member is movably disposed on the connecting plate. 4. The silicon crystal preparation system according to claim 2, characterized in that two sealing assemblies are provided on the furnace body, the first electrode rod passes through one of the two sealing assemblies, and the second electrode rod passes through the other of the two sealing assemblies, and the sealing assembly comprises: a first connecting seat, wherein the first connecting seat is arranged on the furnace body, and the first electrode rod or the second electrode rod is passed through the first connecting seat; A protective member, the protective member being arranged between an inner wall of the first connecting seat and the first electrode rod or the second electrode rod; a second connection seat, the second connection seat is fixedly connected to the first connection seat and sleeved on the first electrode rod or the second electrode rod, and the second connection seat is used to fix the protective member; A sealing member is arranged inside the second connecting seat and located between the second connecting seat and the first electrode rod or the second electrode rod. 5 . The silicon crystal preparation system according to claim 1 , wherein the inner wall of the furnace body is provided with refractory material. 6. The silicon crystal preparation system according to claim 5 is characterized in that a coolant inlet and a coolant outlet are provided on the furnace body, a cooling channel is provided between the coolant inlet and the coolant outlet, and the cooling channel is provided inside the refractory material. 7. The silicon crystal preparation system according to claim 1, characterized in that the gasification furnace further comprises a constraint mechanism, and the constraint mechanism comprises: An air supply component, the air supply component comprising an air supply member arranged along the circumference of the heating channel, the air supply member having an air supply port arranged along the extension direction of the heating channel, the number of the air supply components being two, the air supply members of the two air supply components being respectively arranged at the two ends of the heating channel, and the air supply ports of the two air supply members being arranged opposite to each other; An air supply component is arranged outside the furnace body and is used to supply air to the air supply component. 8. The silicon crystal preparation system according to any one of claims 1 to 7, characterized in that the condensing device comprises: Condenser, the number of the condensers is multiple, and they are sequentially connected and arranged at the output end of the heating channel. 9. The silicon crystal preparation system according to claim 8, characterized in that the silicon crystal preparation system further comprises: A preheating device, wherein the preheating device comprises a feed chamber and a preheating chamber, wherein the feed chamber is connected to the feed port, and the feed chamber is used to output materials to the feed port; the preheating chamber is sleeved on the outside of the feed chamber, and the preheating chamber is connected and arranged between the condensing device and the air intake device. 10. The silicon crystal preparation system according to claim 9, characterized in that the silicon crystal preparation system further comprises: A separation device, wherein the separation device has a first inlet, a first outlet and a second outlet, wherein the first inlet is connected to the output end of the condensing device, the first outlet is connected to the preheating chamber through the pipeline, and the second outlet is used to output the material in the mixed gas.