CN221701636U - MPCVD base station device for micro-region temperature control through induction heating coil - Google Patents

Abstract

The utility model relates to an MPCVD (multi-point chemical vapor deposition) base station device for micro-area temperature control through an induction heating coil, which comprises a reaction furnace body, a raw material gas inlet, a gas outlet, a microwave transmitting coil and plasma, wherein a seed crystal tray is arranged below the plasma, the seed crystal tray is arranged on the upper end surface of the base station, a plurality of annular temperature control water tanks are arranged below the contact surface of the seed crystal tray and the base station, the temperature control water tanks are in a closed state and are provided with a water inlet and a water outlet, the water inlet and the water outlet downwards extend out of the reaction furnace body, a temperature area is formed between the adjacent temperature control water tanks, and a plurality of micro-induction heating coils are arranged in the temperature area. The utility model can solve the problem that the heating rate of the plasma above the seed crystal tray is inconsistent, which is caused by the ellipsoidal plasma above the seed crystal tray, thus realizing the precise control of the partition temperature at high temperature and having remarkable improvement effect on the yield of crystal growth.

Description

An MPCVD base device for micro-area temperature control through induction heating coil

Technical Field

The utility model relates to the technical field of crystal growth equipment, in particular to an MPCVD base device which performs micro-area temperature control through an induction heating coil.

Background Art

When microwave plasma chemical vapor deposition (MPCVD) is used to produce diamond, high-power microwaves are fed into the plasma cavity through waveguides or coaxial transmission lines, and are superimposed and focused at appropriate locations (growth platforms) in the cavity to achieve a certain intensity. There is a growth platform inside the cavity, which is equipped with cooling water pipes and many temperature measuring devices. Plasma is generated above the growth platform, and the seed crystal is heated to a red-hot state, with a temperature of about 1000°C.

In the prior art, the temperature of the seeds placed in the seed tray continues to rise during the plasma heating process. However, since the plasma above the seed tray is ellipsoidal, the heating rate of various parts of the seed tray is inconsistent. Therefore, it is necessary to set up an MPCVD base device that performs micro-area temperature control through an induction heating coil to ensure that the seeds placed in various parts of the seed tray are heated uniformly.

Utility Model Content

In order to solve the problems raised in the above background technology, the utility model provides an MPCVD base device which performs micro-area temperature control through an induction heating coil.

In order to achieve the above purpose, the utility model provides the following technical solutions:

An MPCVD base device for micro-area temperature control by induction heating coils comprises a reaction furnace body, a raw material gas inlet, a gas outlet, a microwave transmitting coil and a plasma, wherein the top of the reaction furnace body is provided with a raw material gas inlet and a gas outlet, and the plasma is generated in the internal cavity of the reaction furnace body by the microwave transmitting coil; a seed tray is provided below the plasma, the seed tray is placed on the upper end surface of the base, a plurality of annular temperature-controlled water tanks are provided below the contact surface between the seed tray and the base, the temperature-controlled water tanks are in a closed state and are provided with a water inlet and a water outlet, the water inlet and the water outlet extend downwardly out of the reaction furnace body, and temperature zones are formed between adjacent temperature-controlled water tanks, and a plurality of micro induction heating coils are provided in the temperature zones.

Furthermore, a reflective plate is arranged around the seed tray to provide the technical effects of heat insulation and reflection of the escaped plasma, and can effectively protect the inner wall of the reaction furnace.

Furthermore, the reflector is provided with a reflector water inlet and a reflector water outlet, and the reflector water inlet and the reflector water outlet extend downward out of the reaction furnace body, further improving the technical effect of protecting the inner wall of the reaction furnace body.

Compared with the prior art, the beneficial effects of the utility model are:

During the heating process of the seed crystals in the seed crystal tray, the plasma above the seed crystal tray is ellipsoidal, resulting in inconsistent heating rates for various parts of the seed crystal tray. At this time, during the heating process, the micro-induction heating coil below the seed crystal tray can accurately detect the temperature rise of the seed crystals at different positions on the seed crystal tray, and then adjust the heating rates of various parts on the seed crystal tray to be consistent through the flow of water in the temperature-controlled water tank through the water inlet and outlet, so as to achieve precise control of the zone temperature at high temperature, which has a significant effect on improving the yield of crystal growth. The seed crystal tray is surrounded by a reflector, which has the technical effect of heat insulation and reflection of the escaped plasma, and can effectively protect the inner wall of the reactor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic structural diagram of a temperature-controlled water tank in the present invention.

FIG. 2 is a schematic structural diagram of the utility model.

In the figure: 1. temperature-controlled water tank; 2. water inlet; 3. water outlet; 4. temperature zone; 5. micro induction heating coil; 6. seed tray; 7. base; 8. reflector water inlet; 9. reflector water outlet; 10. reaction furnace body; 11. raw gas inlet; 12. gas outlet; 13. microwave transmitting coil; 14. plasma; 15. reflector.

DETAILED DESCRIPTION

Example 1

Please refer to Figures 1 and 2. An MPCVD base device for micro-area temperature control by induction heating coils includes a reaction furnace body 10, a raw material gas inlet 11, a gas outlet 12, a microwave transmitting coil 13 and a plasma 14. The top of the reaction furnace body 10 is provided with a raw material gas inlet 11 and a gas outlet 12. The plasma 14 is generated in the internal cavity of the reaction furnace body 10 by the microwave transmitting coil 13; a seed tray 6 is provided below the plasma 14, and the seed tray 6 is placed on the upper end surface of the base 7. A plurality of annular temperature-controlled water tanks 1 are provided below the contact surface between the seed tray 6 and the base 7. The temperature-controlled water tank 1 is in a closed state and is provided with a water inlet 2 and a water outlet 3. The water inlet 2 and the water outlet 3 extend downwardly out of the reaction furnace body 10. A temperature partition 4 is formed between adjacent temperature-controlled water tanks 1, and a plurality of micro induction heating coils 5 are provided in the temperature partition 4.

Example 2

Please refer to Figures 1 and 2. An MPCVD base device for micro-area temperature control by induction heating coils includes a reaction furnace body 10, a raw material gas inlet 11, a gas outlet 12, a microwave transmitting coil 13 and a plasma 14. The top of the reaction furnace body 10 is provided with a raw material gas inlet 11 and a gas outlet 12. The plasma 14 is generated in the internal cavity of the reaction furnace body 10 by the microwave transmitting coil 13; a seed tray 6 is provided below the plasma 14, and the seed tray 6 is placed on the upper end surface of the base 7. A plurality of annular temperature-controlled water tanks 1 are provided below the contact surface between the seed tray 6 and the base 7. The temperature-controlled water tanks 1 are closed. state and is provided with a water inlet 2 and a water outlet 3, the water inlet 2 and the water outlet 3 extend downwardly out of the reaction furnace body 10, and a temperature partition 4 is formed between adjacent temperature-controlled water tanks 1, and a plurality of miniature induction heating coils 5 are arranged in the temperature partition 4; a reflective plate 15 is arranged around the seed crystal tray 6, which has the technical effect of heat insulation and reflection of the escaped plasma 14, and can effectively protect the inner wall of the reaction furnace body 10; a reflective plate water inlet 8 and a reflective plate water outlet 9 are arranged on the reflective plate 15, and the reflective plate water inlet 8 and the reflective plate water outlet 9 extend downwardly out of the reaction furnace body 10, further improving the technical effect of protecting the inner wall of the reaction furnace body 10.

The working principle of the utility model is: during the heating process of the seed crystal in the seed crystal tray, the plasma above the seed crystal tray is ellipsoidal, resulting in inconsistent heating rates for various parts of the seed crystal tray. At this time, during the heating process, the micro-induction heating coil 5 below the seed crystal tray 6 can accurately detect the temperature rise of the seed crystals at different positions on the seed crystal tray 6, and then adjust the temperature rise rates of various parts on the seed crystal tray 6 to be consistent through the flow of water inlet 2 and outlet 3 in the temperature-controlled water tank 1, so as to achieve precise control of the zone temperature at high temperature, which has a significant effect on improving the yield of crystal growth. The seed crystal tray 6 is surrounded by a reflector 15, which has the technical effect of heat insulation and reflection of the escaped plasma 14, and can effectively protect the inner wall of the reactor body 10.

It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or basic features of the present invention. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims are included in the present invention.

In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims (3)

1. The utility model provides a carry out MPCVD base device of micro-zone accuse temperature through induction heating coil, includes reaction furnace body (10), raw materials gas inlet (11), gas outlet (12), microwave transmitting coil (13) and plasma (14), reaction furnace body (10) top is provided with raw materials gas inlet (11) and gas outlet (12), plasma (14) are passed through microwave transmitting coil (13) produce in the inside cavity of reaction furnace body (10), its characterized in that: the utility model discloses a reaction furnace, including base platform (7), plasma (14) below is provided with seed crystal tray (6), seed crystal tray (6) are placed at the up end of base platform (7), seed crystal tray (6) with contact surface below of base platform (7) is provided with a plurality of annular accuse temperature basin (1), accuse temperature basin (1) are closed state and are provided with water inlet (2) and delivery port (3), water inlet (2) with delivery port (3) downwardly extending reaction furnace body (10), adjacent form temperature subregion (4) between accuse temperature basin (1), be provided with a plurality of miniature induction heating coils (5) in temperature subregion (4).

2. An MPCVD susceptor apparatus for micro-zone temperature control by an induction heating coil according to claim 1, wherein: a reflecting plate (15) is arranged around the seed crystal tray (6).

3. An MPCVD susceptor apparatus for micro-zone temperature control by an induction heating coil according to claim 2, wherein: the reaction furnace is characterized in that a reflecting plate water inlet (8) and a reflecting plate water outlet (9) are arranged on the reflecting plate (15), and the reflecting plate water inlet (8) and the reflecting plate water outlet (9) downwards extend out of the reaction furnace body (10).