CN221566368U - Graphite crucible main body and graphite crucible - Google Patents
Graphite crucible main body and graphite crucible Download PDFInfo
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- CN221566368U CN221566368U CN202322677987.8U CN202322677987U CN221566368U CN 221566368 U CN221566368 U CN 221566368U CN 202322677987 U CN202322677987 U CN 202322677987U CN 221566368 U CN221566368 U CN 221566368U
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- crucible
- adjusting ring
- side wall
- transmission adjusting
- graphite crucible
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 64
- 239000010439 graphite Substances 0.000 title claims abstract description 64
- 230000005540 biological transmission Effects 0.000 claims abstract description 80
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000003566 sealing material Substances 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a graphite crucible main body and a graphite crucible. The graphite crucible main body comprises a crucible side wall and a crucible bottom, wherein a first transmission adjusting ring and a second transmission adjusting ring are arranged on the inner surface of the crucible side wall, and the first transmission adjusting ring and the second transmission adjusting ring are both annular and are coaxially arranged with the crucible side wall; the first transmission adjusting ring is close to the bottom of the crucible relative to the second transmission adjusting ring, and when the silicon carbide airflow bypasses the first transmission adjusting ring and moves upwards continuously, the silicon carbide airflow is in a diffusion trend of flowing towards the direction close to the side wall of the crucible, so that a certain amount of silicon carbide is also arranged at the position close to the side wall of the crucible; the gaseous silicon carbide continuously moves upwards for a section of height and then is contacted with the second transmission adjusting ring to bypass, and then the gaseous silicon carbide also has a diffusion trend of flowing in the direction close to the side wall of the crucible, so that the peripheral edge of the graphite crucible cover is rich in silicon carbide, and the silicon carbide can be sublimated to form an ingot with a larger diameter, and the edge quality of the ingot is improved.
Description
Technical Field
The utility model relates to the technical field of silicon carbide ingot production equipment, in particular to a graphite crucible main body and a graphite crucible.
Background
Silicon carbide is used as a third generation wide forbidden band semiconductor material and has the characteristics of high heat conductivity, high breakdown electric field, high radiation resistance and the like. 4H-SiC has more excellent electrical properties in various crystal forms, so that the requirements of the current technological development on substrate materials such as high-power and radiation-resistant devices can be met. The current growth method for industrially producing silicon carbide single crystals is mainly a physical vapor transport method (Physical Vapor Transport, abbreviated as PVT). In the growth process of silicon carbide based on the physical vapor transport method, the design of a graphite crucible directly determines the growth level of an ingot. The current 6 inch conductivity type silicon carbide substrate growth process has matured. An 8 inch ingot can further reduce the cost of silicon carbide devices compared to a 6 inch silicon carbide ingot, however, 8 inch conductivity type silicon carbide is a problem to be solved in terms of how to ensure its edge quality due to its larger size.
Disclosure of utility model
The utility model provides a graphite crucible main body and a graphite crucible, which can form an ingot with larger diameter and improve the quality of the edge of the ingot.
The utility model provides a graphite crucible main body, which comprises a crucible side wall and a crucible bottom, wherein the crucible side wall is annular arranged around the crucible bottom;
The inner surface of the side wall of the crucible is provided with a first transmission adjusting ring and a second transmission adjusting ring, and the first transmission adjusting ring and the second transmission adjusting ring are both annular and are coaxially arranged with the side wall of the crucible;
The first transmission adjusting ring is close to the bottom of the crucible relative to the second transmission adjusting ring, the first transmission adjusting ring and the bottom of the crucible are arranged at intervals, and the first transmission adjusting ring is used for controlling the transmission direction of the solid silicon carbide after generating the gas state;
The second transmission adjusting ring is arranged at intervals with the first transmission adjusting ring and is arranged at intervals with the top of the side wall of the crucible, and the second transmission adjusting ring is used for controlling the diameter of an ingot and the quality of the edge of the ingot after the gaseous silicon carbide is sublimated at the top of the graphite crucible.
According to the graphite crucible main body and the graphite crucible provided by the utility model, when the silicon carbide airflow bypasses the first transmission adjusting ring and moves upwards continuously, the silicon carbide airflow is in a diffusion trend of flowing towards the direction close to the side wall of the crucible, so that a certain amount of silicon carbide is also arranged at the position close to the side wall of the crucible; the gaseous silicon carbide continuously moves upwards for a section of height and then is contacted with the second transmission adjusting ring to bypass, and then the gaseous silicon carbide also has a diffusion trend of flowing in the direction close to the side wall of the crucible, so that the peripheral edge of the graphite crucible cover is provided with rich silicon carbide, the silicon carbide can be desublimated to form an ingot with a larger diameter, the quality of the edge of the ingot is improved, and the purposes of controlling the diameter of the ingot and the quality of the edge of the ingot after the gaseous silicon carbide is desublimated at the top of the graphite crucible are achieved.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are needed in the embodiments are briefly described below, and the drawings in the following description are only drawings corresponding to some embodiments of the present utility model.
Fig. 1 is an axial sectional view of a graphite crucible body provided in a preferred embodiment of the present utility model.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The words "first," "second," and the like in the terminology of the present utility model are used for descriptive purposes only and are not to be construed as indicating or implying relative importance and not as limiting the order of precedence.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
Referring to fig. 1, a preferred embodiment of the present utility model provides a graphite crucible including a graphite crucible body 100 and a graphite crucible cover (not shown) connected to the top of the graphite crucible body 100 and forming a closed cavity therebetween, wherein solid silicon carbide is placed in the graphite crucible body 100, and the graphite crucible is heated from the outside to grow on the inner surface of the graphite crucible cover to form a silicon carbide ingot.
The graphite crucible body 100 includes a crucible side wall 1 and a crucible bottom 2, the crucible side wall 1 is ring-shaped and is arranged around the crucible bottom 2, and solid silicon carbide is placed on the crucible bottom 2. Heating means may be provided around the graphite crucible body 100 and/or below the crucible bottom 2 to heat and gasify the solid silicon carbide inside.
The inner surface of the crucible side wall 1 is provided with a first transmission adjusting ring 11 and a second transmission adjusting ring 12, and the first transmission adjusting ring 11 and the second transmission adjusting ring 12 are both annular and coaxially arranged with the crucible side wall 1. The first transmission adjusting ring 11 is close to the crucible bottom 2 relative to the second transmission adjusting ring 12, the first transmission adjusting ring 11 and the crucible bottom 2 are arranged at intervals, and the first transmission adjusting ring 11 is used for controlling the transmission direction of the solid silicon carbide after generating the gas. The second transmission adjusting ring 12 is arranged at intervals with the first transmission adjusting ring 11 and is arranged at intervals with the top of the crucible side wall 1, and the second transmission adjusting ring 12 is used for controlling the diameter of an ingot and the quality of the edge of the ingot after the gaseous silicon carbide is sublimated at the top of the graphite crucible.
When the gasified silicon carbide moves upwards from the crucible bottom 2 to form air flow, the air flow close to the crucible side wall 1 firstly hits the first transmission adjusting ring 11 when flowing upwards, and the air flow of the silicon carbide needs to be deviated to a direction far away from the crucible side wall 1 to bypass the first transmission adjusting ring 11 due to the blocking effect of the first transmission adjusting ring 11. Because the gas silicon carbide is not present in the nearer area of the junction between the upper side of the first transmission adjusting ring 11 and the crucible side wall 1 and the gas pressure is lower, when the silicon carbide gas flow bypasses the first transmission adjusting ring 11 and moves upwards, the silicon carbide gas flow will have a diffusion trend of flowing towards the direction close to the crucible side wall 1, so that the position close to the crucible side wall 1 also has a certain amount of silicon carbide.
The gaseous silicon carbide continuously moves upwards for a section of height and then is contacted with the second transmission adjusting ring 12 to bypass, and then the gaseous silicon carbide also has a diffusion trend of flowing in the direction close to the side wall 1 of the crucible, so that the peripheral edge of the graphite crucible cover is provided with rich silicon carbide, an ingot with a larger diameter can be formed by desublimation, the quality of the edge of the ingot is improved, and the purposes of controlling the diameter of the ingot and the quality of the edge of the ingot after the gaseous silicon carbide is desublimated at the top of the graphite crucible are achieved.
The inside of the top of the crucible side wall 1 is provided with a step groove 10, and the step groove 10 is annular arranged around the crucible side wall 1. By providing the stepped groove 10, the assembly connection between the graphite crucible cover and the top of the crucible side wall 1 can be facilitated.
The stepped groove 10 includes a sealing material filling region 101 and an internal thread 102, the sealing material filling region 101 is close to the bottom of the crucible relative to the internal thread 102, the sealing material filling region 101 is used for filling sealing material, and the internal thread 102 is used for being in threaded connection with the graphite crucible cover. By using the step structure of the step groove 10, the sealing material is filled on the step surface, and the sealing material can be tightly pressed between the step surface and the graphite crucible cover, so that the sealing performance is effectively ensured, and the gaseous silicon carbide is prevented from overflowing the crucible at high temperature.
The internal threads 102 may be of a general specification for graphite crucibles in the art to be able to match graphite crucible covers of different parameters. The assembly connection between the crucible side wall 1 and the graphite crucible cover is further facilitated by utilizing the screw threads.
The large diameter of the internal thread 102 is equal to or smaller than the inner diameter of the sealing material filling area 101, so that the graphite crucible cover can be partially pressed into the sealing material filling area 101 after being rotated, the sealing material can be better pressed between the graphite crucible cover and the step surface, and the sealing effect is improved.
The inner diameter D2 of the crucible sidewall 1 is 200-215mm to enable the graphite crucible to be processed to produce an 8 inch silicon carbide ingot.
The distance L12 between the second transmission adjusting ring 12 and the top surface of the crucible side wall 1 is 50-60mm, so that the gaseous silicon carbide can reach the graphite crucible cover in a shorter distance after bypassing the second transmission adjusting ring 12 and diffusing, and desublimation is carried out at the edge of the graphite crucible cover, thereby effectively improving the quality of the edge of the ingot.
The second transmission adjusting ring 12 has the same size as the first transmission adjusting ring 11 to facilitate processing and preparation. Taking the first transmission adjusting ring 11 as an example, the inner diameter D11 of the first transmission adjusting ring 11 is 195-210mm, and the dimension H11 in the axial direction is 5-10mm, so that the gas silicon carbide can more easily bypass the first transmission adjusting ring 11 and the second transmission adjusting ring 12 and can more easily expand to the side wall 1 of the crucible after being diffused.
The distance L11 between the first transmission adjusting ring 11 and the second transmission adjusting ring 12 is 30-35cm, and the distance L2 between the first transmission adjusting ring 11 and the crucible bottom 2 is 30-35cm, so that the purpose of adjusting the transmission air flow is better realized, the air flow line is simpler, the thermal field fluctuation is smaller, and the influence on the ingot quality caused by turbulence is avoided.
The outer diameter D1 of the crucible side wall 1 is 240-260mm, the thickness H2 of the crucible bottom 2 is 18-25mm, so that the graphite crucible main body 100 has good structural strength, high temperature generated by an external heating device can be transferred into the graphite crucible, the powder can be gasified more uniformly, the growth speed is more stable, and the surface of an ingot is smoother.
In this embodiment, more specifically: the total height H100 of the crucible body is 147.5mm; the outer diameter D1 of the side wall 1 of the crucible is 250mm, the form and position tolerance is 0.3mm, and the inner diameter D2 is 211mm; the axial dimension H10 of the step groove 10 is 16.7mm, the form and position tolerance is 0.3mm, and the axial dimension H101 of the sealing material filling area 101 is 8mm; the inner diameter D11 of the first transmission adjusting ring 11 and the second transmission adjusting ring 12 is 205mm, and the axial dimension H11 is 5mm; the distance L2 from the first transmission adjusting ring 11 to the crucible bottom 2 is 30mm, the distance L11 from the first transmission adjusting ring 11 to the second transmission adjusting ring 12 is 30mm, the distance L12 between the second transmission adjusting ring 12 and the top surface of the crucible side wall 1 is 57.5mm, and the thickness H2 of the crucible bottom 2 is 20mm. The size data above are verified by experiments to be able to obtain larger diameter silicon carbide ingots with better edge quality and better 8 inch silicon carbide ingots.
The graphite crucible main body 100 and the graphite crucible provided by the utility model can be used for 8-inch conductive silicon carbide crystal ingot growth, the transmission of gaseous silicon carbide can be regulated by utilizing the first transmission regulating ring 11 and the second transmission regulating ring 12, the crystal ingot diameter and the crystal ingot edge quality of the gaseous silicon carbide after the top of the graphite crucible is sublimated can be controlled, and the structure and the size design enable the thermal field fluctuation to be smaller, thereby being more beneficial to crystal ingot diameter expansion and improvement of crystal ingot thickness, reducing the generation probability of adverse conditions such as phase change and the like, and further improving the crystal ingot quality and yield. Through the specially designed crucible bottom 2, the powder can be gasified more uniformly, the growth speed is more stable, and the surface of the ingot is smoother.
In summary, although the present utility model has been described in terms of the preferred embodiments, the above-mentioned embodiments are not intended to limit the utility model, and those skilled in the art can make various modifications and alterations without departing from the spirit and scope of the utility model, so that the scope of the utility model is defined by the appended claims.
Claims (10)
1. The graphite crucible main body is characterized by comprising a crucible side wall and a crucible bottom, wherein the crucible side wall is annular and is arranged around the crucible bottom;
The inner surface of the side wall of the crucible is provided with a first transmission adjusting ring and a second transmission adjusting ring, and the first transmission adjusting ring and the second transmission adjusting ring are both annular and are coaxially arranged with the side wall of the crucible;
The first transmission adjusting ring is close to the bottom of the crucible relative to the second transmission adjusting ring, the first transmission adjusting ring and the bottom of the crucible are arranged at intervals, and the first transmission adjusting ring is used for controlling the transmission direction of the solid silicon carbide after generating the gas state;
The second transmission adjusting ring is arranged at intervals with the first transmission adjusting ring and is arranged at intervals with the top of the side wall of the crucible, and the second transmission adjusting ring is used for controlling the diameter of an ingot and the quality of the edge of the ingot after the gaseous silicon carbide is sublimated at the top of the graphite crucible.
2. The graphite crucible body according to claim 1, wherein a stepped groove is provided on the top inner side of the crucible side wall, the stepped groove being annular provided around the crucible side wall.
3. The graphite crucible body of claim 2, wherein the stepped groove includes a sealing material filling region and an internal thread, the sealing material filling region being adjacent to the crucible bottom relative to the internal thread, the sealing material filling region being for filling sealing material, the internal thread being for threaded connection with a graphite crucible cover.
4. A graphite crucible body according to claim 3, wherein the internal thread has a major diameter equal to or smaller than the inner diameter of the sealing material filling region.
5. The graphite crucible body according to any one of claims 1 to 4, wherein the inner diameter of the crucible side wall is 200 to 215mm.
6. The graphite crucible body of claim 5, wherein the spacing between the second transmission adjustment ring and the top surface of the crucible sidewall is 50-60mm.
7. The graphite crucible body according to claim 5, wherein the first transmission adjustment ring has an inner diameter of 195-210mm and a dimension in the axial direction of 5-10mm;
The second transmission adjustment ring has the same size as the first transmission adjustment ring.
8. The graphite crucible body according to claim 5, wherein the first transmission adjustment ring is spaced from the second transmission adjustment ring by a distance of 30-35cm,
The distance between the first transmission adjusting ring and the bottom of the crucible is 30-35cm.
9. The graphite crucible body according to claim 5, wherein the outer diameter of the crucible side wall is 240-260mm and the thickness of the crucible bottom is 18-25mm.
10. A graphite crucible comprising a graphite crucible cover and the graphite crucible body of any one of claims 1 to 9, the graphite crucible cover being attached to the top of the graphite crucible body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322677987.8U CN221566368U (en) | 2023-09-27 | 2023-09-27 | Graphite crucible main body and graphite crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322677987.8U CN221566368U (en) | 2023-09-27 | 2023-09-27 | Graphite crucible main body and graphite crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221566368U true CN221566368U (en) | 2024-08-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322677987.8U Active CN221566368U (en) | 2023-09-27 | 2023-09-27 | Graphite crucible main body and graphite crucible |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221566368U (en) |
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- 2023-09-27 CN CN202322677987.8U patent/CN221566368U/en active Active
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