CN221380494U - Surge protection circuit and switching power supply - Google Patents
Surge protection circuit and switching power supply Download PDFInfo
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- CN221380494U CN221380494U CN202323279879.1U CN202323279879U CN221380494U CN 221380494 U CN221380494 U CN 221380494U CN 202323279879 U CN202323279879 U CN 202323279879U CN 221380494 U CN221380494 U CN 221380494U
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- 238000005070 sampling Methods 0.000 claims description 32
- 230000000087 stabilizing effect Effects 0.000 claims description 23
- 239000003990 capacitor Substances 0.000 claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 230000004044 response Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Abstract
The utility model discloses a surge protection circuit and a switching power supply. The surge protection circuit comprises a high-voltage depletion type transistor and an impedance element; the drain electrode of the high-voltage depletion type transistor is electrically connected with the input end of the surge protection circuit, the source electrode of the high-voltage depletion type transistor is electrically connected with the first end of the impedance element, and the grid electrode of the high-voltage depletion type transistor is electrically connected with the output end of the surge protection circuit; the second end of the impedance element is electrically connected with the output end of the surge protection circuit. The surge protection circuit has the advantages of improving the response speed and being simple in structure.
Description
Technical Field
The present utility model relates to the field of semiconductor technologies, and in particular, to a surge protection circuit and a switching power supply.
Background
Along with the development of intelligence and electrification, the number of electric equipment is increased, and the requirement on the safety of the electric equipment in the process of electricity utilization is gradually increased. Therefore, at the input end of the switching power supply of the electric equipment, a lightning-proof and surge-proof circuit structure is usually required to be designed, and the scheme in the prior art is slow in response and complex in structure.
Disclosure of utility model
The utility model provides a surge protection circuit and a switching power supply, which are used for solving the problems of slow response and complex structure of the surge protection circuit.
According to an aspect of the present utility model, there is provided a surge protection circuit including a high voltage depletion transistor and an impedance element;
The drain electrode of the high-voltage depletion type transistor is electrically connected with the input end of the surge protection circuit, the source electrode of the high-voltage depletion type transistor is electrically connected with the first end of the impedance element, and the grid electrode of the high-voltage depletion type transistor is electrically connected with the output end of the surge protection circuit;
the second end of the impedance element is electrically connected with the output end of the surge protection circuit.
Optionally, the impedance element includes a control resistor, a first end of the control resistor being a first end of the impedance element, and a second end of the control resistor being a second end of the impedance element.
Optionally, the impedance element includes a sampling inductance, a first end of the sampling inductance being a first end of the impedance element, and a second end of the sampling inductance being a second end of the impedance element.
Optionally, the surge protection circuit further includes a voltage stabilizing unit, a first end of the voltage stabilizing unit is electrically connected with the first end of the sampling inductor, a second end of the voltage stabilizing unit is electrically connected with the second end of the sampling inductor, and the voltage stabilizing unit is used for stabilizing the voltage of the sampling inductor.
Optionally, the voltage stabilizing unit includes a voltage stabilizing diode, a cathode of the voltage stabilizing diode is electrically connected with the first end of the sampling inductor, and an anode of the voltage stabilizing diode is electrically connected with the second end of the sampling inductor.
Optionally, the voltage stabilizing unit includes a piezoresistor, a first end of the piezoresistor is electrically connected with a first end of the sampling inductor, and a second end of the piezoresistor is electrically connected with a second end of the sampling inductor.
Optionally, the surge protection circuit further includes:
the first end of the first capacitor is electrically connected with the input end of the surge protection circuit, and the second end of the first capacitor is grounded; and/or the number of the groups of groups,
And the first end of the second capacitor is electrically connected with the output end of the surge protection circuit, and the second end of the second capacitor is grounded.
Optionally, the surge protection circuit further includes a package structure, and the high-voltage depletion transistor and the impedance element are packaged in the package structure.
Optionally, the high voltage depletion transistor is a gallium nitride transistor.
According to another aspect of the present utility model, there is provided a switching power supply comprising the surge protection circuit of any one of the above.
According to the surge protection circuit provided by the embodiment of the utility model, the voltage detection and the switch control of the surge protection circuit are realized by arranging the high-voltage depletion type transistor and the impedance element, and the circuit can be cut off in time when the surge current is overlarge. The circuit structure of the surge protection circuit is simple, the stability is good, and the high-voltage depletion type transistor is arranged, so that the on-off response of the surge protection circuit is rapid, and when the surge current is overlarge, the circuit between the input end of the surge protection circuit and the output end of the surge protection circuit is rapidly cut off, thereby protecting the electricity safety of the switching power supply.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the utility model or to delineate the scope of the utility model. Other features of the present utility model will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a circuit diagram of a surge protection circuit provided according to an embodiment of the present utility model;
FIG. 2 is a circuit diagram of another surge protection circuit provided in accordance with an embodiment of the present utility model;
FIG. 3 is a circuit diagram of yet another surge protection circuit provided in accordance with an embodiment of the present utility model;
FIG. 4 is a circuit diagram of yet another surge protection circuit provided in accordance with an embodiment of the present utility model;
fig. 5 is a circuit diagram of yet another surge protection circuit provided in accordance with an embodiment of the present utility model.
Detailed Description
In order that those skilled in the art will better understand the present utility model, a technical solution in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The utility model provides a surge protection circuit, fig. 1 is a circuit diagram of the surge protection circuit provided by the embodiment of the utility model, and referring to fig. 1, the surge protection circuit comprises a high-voltage depletion type transistor 1 and an impedance element 2. The drain electrode D of the high-voltage depletion type transistor 1 is electrically connected with the input end Vin of the surge protection circuit, the source electrode S of the high-voltage depletion type transistor 1 is electrically connected with the first end of the impedance element 2, and the grid electrode G of the high-voltage depletion type transistor 1 is electrically connected with the output end Vo of the surge protection circuit; the second terminal of the impedance element 2 is electrically connected to the output terminal Vo of the surge protection circuit.
Specifically, the high-voltage depletion transistor 1, as a protection unit of the surge protection circuit, may be used to cut off a current path between the input terminal Vin of the surge protection circuit and the output terminal Vo of the surge protection circuit. The high-voltage depletion transistor 1 is in an on state when its gate-source voltage is 0 and is turned off when its gate-source voltage is negative, in other words, the high-voltage depletion transistor 1 is in an on state when no voltage is applied across its gate-source, i.e., the high-voltage depletion transistor 1 is a normally-on device. When a current is input to the input terminal Vin of the surge protection circuit, the current flows through the high-voltage depletion transistor 1 first and flows out from the output terminal Vo of the surge protection circuit through the impedance element 2 because the high-voltage depletion transistor 1 is in a normally-on state. When a current flows through the impedance element 2, a voltage drop is generated across the impedance element 2, so that the voltage at the first end of the impedance element 2 is greater than the voltage at the second end, that is, the voltage at the source S of the high-voltage depletion transistor 1 is greater than the voltage at the gate G, and at this time, the gate-source voltage Vgs of the high-voltage depletion transistor 1 is less than 0. When the voltage across the impedance element 2 is proportional to the current flowing through the impedance element 2 after the impedance element 2 is determined, when the input current at the input end Vin of the surge protection circuit is smaller, the voltage across the impedance element 2 is smaller and smaller than the absolute value of the threshold voltage set by the high-voltage depletion transistor 1, which means that the surge current at the moment cannot affect the normal operation of the circuit, and the high-voltage depletion transistor 1 keeps on state at the moment, that is, the surge protection circuit cannot affect the passing of the normal current. When the current input by the input end Vin of the surge protection circuit is larger, the voltage at two ends of the impedance element 2 is larger than the absolute value of the threshold voltage set by the high-voltage depletion transistor 1, so that the surge current at the moment is overlarge, at the moment, the protection scheme is started, the high-voltage depletion transistor 1 is rapidly disconnected, and a passage between the input end Vin of the surge protection circuit and the output end Vo of the surge protection circuit is cut off, so that larger surge current is prevented from flowing into a later-stage circuit of the surge protection circuit, and the protection of the later-stage circuit is realized. When the voltage across the impedance element 2 is approximately equal to the absolute value of the threshold voltage set by the high-voltage depletion transistor 1, the high-voltage depletion transistor 1 may be repeatedly turned on and off, so that the high-voltage depletion transistor 1 in this state may be understood as an incomplete on state between the complete on state and the complete off state, and the high-voltage depletion transistor 1 may be equivalently a resistor, which plays a role in limiting the magnitude of the input current.
According to the surge protection circuit provided by the embodiment of the utility model, the voltage detection and the switch control of the surge protection circuit are realized by arranging the high-voltage depletion type transistor 1 and the impedance element 2, and the circuit can be cut off in time when the surge current is overlarge. The circuit structure of the surge protection circuit is simple, the stability is good, and the high-voltage depletion type transistor 1 is arranged, so that the on-off response of the surge protection circuit is rapid, and when the surge current is overlarge, the circuit between the input end Vin of the surge protection circuit and the output end Vo of the surge protection circuit is rapidly cut off, thereby protecting the electricity safety of the switching power supply.
Fig. 2 is a circuit diagram of another surge protection circuit according to an embodiment of the present utility model, and referring to fig. 2, optionally, the impedance element 2 includes a control resistor R, a first end of the control resistor R is used as a first end of the impedance element 2, and a second end of the control resistor R is used as a second end of the impedance element 2.
Specifically, the control resistor R is a resistor with a fixed resistance, and when the input end Vin of the surge protection circuit is turned on, the control resistor R flows through the current to generate a voltage, and the on-off state of the high-voltage depletion transistor 1 is determined by comparing the voltage with the absolute value of the voltage threshold value set by the high-voltage depletion transistor 1. When the voltage of the control resistor R is smaller than the absolute value of the voltage threshold value set by the high-voltage depletion transistor 1, the high-voltage depletion transistor 1 remains in an on state. When the voltage of the control resistor R is larger than the absolute value of the voltage threshold set by the high-voltage depletion transistor 1, the high-voltage depletion transistor 1 is turned off. When the voltage of the control resistor R is approximately equal to the absolute value of the voltage threshold set by the high-voltage depletion transistor 1, the high-voltage depletion transistor 1 enters the linear resistance region, the high-voltage depletion transistor 1 is in an incomplete on state between the complete on state and the complete off state, and the high-voltage depletion transistor 1 can be equivalent to a resistor to play a role in limiting the input current. The control resistor R is used as the impedance element 2, so that the surge protection circuit has simple structure and reliable performance. The magnitude of the protection current of the surge protection circuit can be controlled by setting the resistance value of the control resistor R and the threshold voltage of the high-voltage depletion transistor 1.
Fig. 3 is a circuit diagram of still another surge protection circuit according to an embodiment of the present utility model, and referring to fig. 3, optionally, the impedance element 2 includes a sampling inductance L, where a first end of the sampling inductance L is used as a first end of the impedance element 2, and a second end of the sampling inductance L is used as a second end of the impedance element 2.
Specifically, compared with the control resistor R, the sampling inductor L has a lower direct current resistance value, so that the conduction loss of direct current and low-frequency alternating current can be obviously reduced when the direct current and the low-frequency alternating current flow, and the circulation efficiency of the current is improved. When a large surge current flows in the surge protection circuit, a large induction voltage is generated on the sampling inductance L because the surge current has a large current change rate, and when the induction voltage is larger than the absolute value of the voltage threshold value set by the high-voltage depletion transistor 1, the high-voltage depletion transistor 1 is turned off, so that the protection effect on the circuit is achieved. When the induced voltage is smaller, namely smaller than the threshold voltage of the high-voltage depletion transistor, the high-voltage depletion transistor 1 keeps on state, and the normal operation of the subsequent circuit is not affected. When the induced voltage is approximately equal to the absolute value of the voltage threshold set by the high-voltage depletion transistor 1, the high-voltage depletion transistor 1 enters a linear resistance region, the high-voltage depletion transistor 1 is in an incomplete on state between the complete on state and the complete off state, and the high-voltage depletion transistor 1 can be equivalent to a resistor at the moment to play a role in limiting the input current.
Fig. 4 is a circuit diagram of a surge protection circuit according to another embodiment of the present utility model, referring to fig. 4, optionally, the surge protection circuit further includes a voltage stabilizing unit 3, a first end of the voltage stabilizing unit 3 is electrically connected to a first end of the sampling inductance L, a second end of the voltage stabilizing unit 3 is electrically connected to a second end of the sampling inductance L, and the voltage stabilizing unit 3 is configured to stabilize a voltage of the sampling inductance L.
Specifically, when the surge current in the surge protection circuit is very large, the surge current at this time has a large current change rate, and a large induced voltage is generated on the sampling inductance L, and the induced voltage is loaded between the source S and the gate G of the high-voltage depletion transistor 1, which may cause the high-voltage depletion transistor 1 to break down due to overvoltage. The voltage stabilizing unit 3 is arranged between the source electrode S and the grid electrode G of the high-voltage depletion type transistor 1, so that the voltages of the source electrode S and the grid electrode G of the high-voltage depletion type transistor 1 are stabilized at a preset voltage, the preset voltage can correspond to the breakdown voltage of the high-voltage depletion type transistor, and when the input current change rate of the surge protection circuit is large, the high-voltage depletion type transistor 1 cannot break down due to the over-abrupt voltage. Thereby improving the reliability of the surge protection circuit.
With continued reference to fig. 4, the voltage stabilizing unit 3 may optionally include a voltage stabilizing diode ZD1, where a cathode of the voltage stabilizing diode ZD1 is electrically connected to the first terminal of the sampling inductance L, and an anode of the voltage stabilizing diode ZD1 is electrically connected to the second terminal of the sampling inductance L.
Specifically, the zener diode ZD1 is a surface contact type transistor diode made of a silicon material, and is a semiconductor device having a very high resistance until a critical reverse breakdown voltage. The zener diode ZD1 shows a voltage stabilizing characteristic in which the terminal voltage is hardly changed in a certain current range at the time of reverse breakdown. When the surge current in the surge protection circuit is very large, a large induced voltage is generated on the sampling inductance L, and the zener diode ZD1 is connected in parallel between the source S and the gate G of the high-voltage depletion transistor 1, so that the high-voltage depletion transistor 1 can be protected, and breakdown between the source S and the gate G of the high-voltage depletion transistor 1 due to the large voltage is avoided.
Fig. 5 is a circuit diagram of another surge protection circuit according to an embodiment of the present utility model, referring to fig. 5, optionally, the voltage stabilizing unit 3 includes a voltage dependent resistor RV, where a first end of the voltage dependent resistor RV is electrically connected to a first end of the sampling inductance L, and a second end of the voltage dependent resistor RV is electrically connected to a second end of the sampling inductance L.
Specifically, the resistive material of the varistor RV is a semiconductor, and is mainly applied to transient overvoltage protection, where the varistor RV can limit the voltage from exceeding the surge withstand voltage value that can be borne by the high-voltage depletion transistor 1. The varistor RV has a very fast response time, can respond in nanosecond scale, and has high reliability and low cost. The circuit protection circuit can provide reliable protection for the circuit, and effectively limits the problems of overvoltage and the like in the circuit. The piezoresistor RV is connected in parallel between the source electrode S and the grid electrode G of the high-voltage depletion type transistor 1, so that breakdown between the source electrode S and the grid electrode G of the high-voltage depletion type transistor 1 due to large voltage can be avoided, and the high-voltage depletion type transistor 1 is protected.
With continued reference to fig. 2 to 5, the surge protection circuit, on the basis of the above embodiments, optionally further includes: the first end of the first capacitor C1 is electrically connected with the input end Vin of the surge protection circuit, and the second end of the first capacitor C2 is grounded; and/or, the first end of the second capacitor C2 is electrically connected with the output end Vo of the surge protection circuit, and the second end of the second capacitor C2 is grounded.
Specifically, the first capacitor C1 is disposed between the input end Vin of the surge protection circuit and the ground end, and the second capacitor C2 is disposed between the output end Vo of the surge protection circuit and the ground end, so that unwanted ac components in the surge protection circuit can be filtered out, and the current is smoother.
Optionally, the surge protection circuit further includes a package structure, and the high-voltage depletion transistor 1 and the impedance element 2 are packaged in the package structure.
Specifically, the high-voltage depletion transistor 1 and the impedance element 2 are packaged in a package structure, and the package structure has two ports, including an input port and an output port. The input port is the input end Vin of the surge protection circuit, and the output port is the output end Vo of the surge protection circuit. The packaging structure has the characteristics of strong stability and miniaturization, can remarkably improve the reliability of anti-surge current, reduce the loss of the anti-surge current and increase the convenience of use. In this embodiment, the high-voltage depletion transistor and the impedance element may be fabricated on the same chip and simultaneously packaged in the package structure, or may be fabricated on different chips and simultaneously packaged in the package structure. By packaging the high-voltage depletion type transistor and the impedance element at the same time, the integration level of the surge protection circuit can be improved, the use convenience is improved, and the loss can be reduced. Of course, in other embodiments, the high voltage depletion mode transistor and the impedance element may be packaged separately and fabricated on the same circuit board.
Alternatively, the high-voltage depletion transistor 1 is a gallium nitride transistor on the basis of the above embodiments.
Specifically, when the control voltages of the source S and the gate G are zero, the conduction channel of the gallium nitride transistor is in a conductive state, and the conduction channel blocking voltage can be turned off only when the control voltages of the source S and the gate G are negative. Compared with the silicon transistor in the prior art, the gallium nitride transistor has the advantages of high frequency, high efficiency, high power, high voltage resistance, high temperature resistance, strong radiation resistance and the like. The gallium nitride transistor is used as a high-voltage depletion type transistor, so that the surge protection circuit can be applied to environments such as high voltage.
The utility model also provides a switching power supply, which comprises the surge protection circuit of any item of the utility model, and has the corresponding beneficial effects of the surge protection circuit, and the details are not repeated.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present utility model may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present utility model are achieved, and the present utility model is not limited herein.
The above embodiments do not limit the scope of the present utility model. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included in the scope of the present utility model.
Claims (10)
1. A surge protection circuit comprising a high voltage depletion mode transistor and an impedance element;
The drain electrode of the high-voltage depletion type transistor is electrically connected with the input end of the surge protection circuit, the source electrode of the high-voltage depletion type transistor is electrically connected with the first end of the impedance element, and the grid electrode of the high-voltage depletion type transistor is electrically connected with the output end of the surge protection circuit;
the second end of the impedance element is electrically connected with the output end of the surge protection circuit.
2. The surge protection circuit of claim 1 wherein the impedance element comprises a control resistor having a first end as the first end of the impedance element and a second end as the second end of the impedance element.
3. The surge protection circuit of claim 1 wherein the impedance element comprises a sampling inductance having a first end as the first end of the impedance element and a second end as the second end of the impedance element.
4. The surge protection circuit of claim 3 further comprising a voltage stabilizing unit having a first terminal electrically connected to the first terminal of the sampling inductance and a second terminal electrically connected to the second terminal of the sampling inductance, the voltage stabilizing unit configured to stabilize the voltage of the sampling inductance.
5. The surge protection circuit of claim 4 wherein the voltage regulator unit comprises a voltage regulator diode having a cathode electrically connected to the first terminal of the sampling inductance and an anode electrically connected to the second terminal of the sampling inductance.
6. The surge protection circuit of claim 4 wherein the voltage regulator unit comprises a varistor having a first end electrically connected to the first end of the sampling inductance and a second end electrically connected to the second end of the sampling inductance.
7. The surge protection circuit of claim 1, wherein the surge protection circuit further comprises:
the first end of the first capacitor is electrically connected with the input end of the surge protection circuit, and the second end of the first capacitor is grounded; and/or the number of the groups of groups,
And the first end of the second capacitor is electrically connected with the output end of the surge protection circuit, and the second end of the second capacitor is grounded.
8. The surge protection circuit of claim 1 further comprising a package structure, wherein the high voltage depletion mode transistor and the impedance element are packaged within the package structure.
9. The surge protection circuit of claim 1 wherein the high voltage depletion mode transistor is a gallium nitride transistor.
10. A switching power supply comprising the surge protection circuit of any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323279879.1U CN221380494U (en) | 2023-12-01 | 2023-12-01 | Surge protection circuit and switching power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323279879.1U CN221380494U (en) | 2023-12-01 | 2023-12-01 | Surge protection circuit and switching power supply |
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| Publication Number | Publication Date |
|---|---|
| CN221380494U true CN221380494U (en) | 2024-07-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202323279879.1U Active CN221380494U (en) | 2023-12-01 | 2023-12-01 | Surge protection circuit and switching power supply |
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| Country | Link |
|---|---|
| CN (1) | CN221380494U (en) |
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2023
- 2023-12-01 CN CN202323279879.1U patent/CN221380494U/en active Active
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