CN221354138U - Power module, vehicle-mounted power supply and vehicle - Google Patents

Abstract

The disclosure relates to a power module, a vehicle-mounted power supply and a vehicle, wherein the power module comprises a plurality of installation areas respectively provided with power units, each power unit is provided with a switching tube wafer respectively, the plurality of installation areas are configured to meet different insulation voltage resistances of each power unit, and the plurality of installation areas are used for being respectively connected with at least one of alternating current voltage, first direct current voltage and second direct current voltage. Through the technical scheme, the power module disclosed by the invention is arranged in the same installation area with the power units meeting the same insulation voltage resistance, and the arrangement of the subareas is favorable for meeting different insulation voltage-resistant safety specifications, so that the working reliability and safety of the power module are ensured.

Description

Power module, vehicle-mounted power supply and vehicle

Technical Field

The disclosure relates to the technical field of electronic products, in particular to a power module, a vehicle-mounted power supply and a vehicle.

Background

Currently, a power module of a vehicle power supply is usually integrated with a plurality of power units, and the power units use a large number of switch tube wafers to realize different functional modes. In the related art, these switch tube wafers are not usually arranged in a protective manner, and due to the complicated grounding condition of the power module, for example, in some situations, the power module needs to be connected with ac, dc and dc, which easily causes the switch tube wafers to fail and be damaged, and affects the reliability of the operation of the power module.

Disclosure of utility model

In order to overcome the problems in the related art, the present disclosure provides a power module, a vehicle-mounted power supply, and a vehicle.

According to a first aspect of embodiments of the present disclosure, there is provided a power module, the power module including a plurality of mounting areas respectively provided with power units, each of the power units being respectively provided with a switching transistor wafer, the plurality of mounting areas being configured to satisfy different insulation voltage resistances of the power units, wherein the plurality of mounting areas are used for respectively accessing at least one of an ac voltage, a first dc voltage, and a second dc voltage.

Optionally, an isolation gap is provided between a plurality of the mounting regions.

Optionally, the mounting area is provided with a first mounting area, a second mounting area and a third mounting area along a first direction, wherein: the first mounting area comprises a switching tube wafer arrangement area of a primary circuit of the power factor correction circuit and the first conversion circuit; the second mounting area comprises a switching tube wafer arrangement area of a secondary circuit of the first conversion circuit and a primary circuit of the second conversion circuit; the third mounting region includes a switching transistor wafer arrangement region of a secondary circuit of the second conversion circuit.

Optionally, the power unit includes: a primary circuit of a power factor correction circuit and a first conversion circuit disposed in the first mounting region; a secondary circuit of the first conversion circuit and a primary circuit of the second conversion circuit disposed in the second mounting region; and a secondary circuit of the second conversion circuit disposed within the third mounting region.

Optionally, the power unit includes: a power factor correction circuit, a first conversion circuit, and a second conversion circuit, wherein the power factor correction circuit, the first conversion circuit, and the second conversion circuit each include: a substrate, a switching transistor wafer, a power terminal and a signal terminal disposed on the substrate.

Optionally, the power module further includes a connection terminal, one end of the connection terminal is connected with the second conversion circuit, and the other end of the connection terminal is connected with an external circuit through a bolt.

Optionally, the second conversion circuit is a full-wave rectification circuit, and the second conversion circuit includes at least two groups of signal control branches connected in parallel, each of the signal control branches includes a pair of signal terminals and a plurality of switching transistor wafers connected in parallel with the signal terminals.

Optionally, a resistor is disposed between the signal terminal and each of the switch tube wafers.

Optionally, the second conversion circuit is provided with a first connection region, a second connection region, a third connection region, a fourth connection region and a fifth connection region along a first direction, wherein the second connection region and the fourth connection region are respectively provided with the switch tube wafer, the first connection region and the fifth connection region are provided with the signal terminal, and the third connection region is connected with an S pole of the switch tube wafer and is connected with an external reference ground.

Optionally, the power terminal and the signal terminal are respectively disposed at opposite sides of the power unit in the first direction.

Optionally, each of the power units is provided with a temperature sensor, and the temperature sensors are disposed on the same side as the signal terminals.

Optionally, the substrate is a metal substrate, and an insulating member is disposed between the substrate and the switch tube wafer.

Optionally, the switch tube wafer is one or more of a Si power switch tube wafer, a SiC power switch tube wafer, an IGBT power switch tube wafer, and a GaN power switch tube wafer.

According to a second aspect of embodiments of the present disclosure, there is provided a vehicle-mounted power supply, including a power module of any one of the above.

According to a third aspect of embodiments of the present disclosure, there is provided a vehicle including the above-described in-vehicle power supply.

The technical scheme provided by the embodiment of the disclosure can comprise the following beneficial effects: the power module provided by the present disclosure includes a plurality of mounting areas provided with power cells, the plurality of mounting areas configured to satisfy different insulation voltage resistances of the power cells. The installation areas are arranged according to the insulation voltage resistance, namely, the installation areas are divided according to the connected voltage form, and different installation areas correspond to respective insulation voltage resistance requirements, specifically, the power units meeting the same insulation voltage resistance are arranged in the same installation area. The zoned arrangement is favorable for meeting different insulation voltage-resistant safety specifications, and can ensure the reliability and safety of the work of the power module even facing the complex working conditions of simultaneously switching in alternating current, high-voltage direct current and low-voltage direct current for example.

Additional features and advantages of the present disclosure will be set forth in the detailed description which follows.

Drawings

The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate the disclosure and together with the description serve to explain, but do not limit the disclosure. In the drawings:

Fig. 1 is a perspective view of a power module provided in an exemplary embodiment of the present disclosure.

Fig. 2 is a top view of the power module of fig. 1.

Fig. 3 is a circuit diagram of a power module provided in an exemplary embodiment of the present disclosure.

Description of the reference numerals

100-Power module, 1-mounting area, 11-first mounting area, 12-second mounting area, 13-third mounting area, 14-isolation gap, 2-power unit, 21-power factor correction circuit, 211-substrate, 212-switch tube wafer, 213-power terminal, 214-signal terminal, 22-first conversion circuit, 221-primary circuit of first conversion circuit, 222-secondary circuit of first conversion circuit, 23-second conversion circuit, 231-primary circuit of second conversion circuit, 232-secondary circuit of second conversion circuit, 2320-signal control branch, 2321-first connection area, 2322-second connection area, 2323-third connection area, 2324-fourth connection area, 2325-fifth connection area, 31-mounting hole, 32-locating pin, 4-connection terminal, 5-temperature sensor, 6-resistor.

Detailed Description

Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present disclosure as detailed in the accompanying claims.

Unless otherwise indicated, terms of orientation such as "upper, lower, left, right" and "inner" are used herein to define the directions indicated by the corresponding drawings, and "inner" and "outer" are intended to refer to the inner and outer sides of the outline of the corresponding component itself. Furthermore, the terms "first," "second," and the like, herein used in order to distinguish one element from another element, without sequence or importance.

As shown in fig. 1 to 3, the present disclosure exemplarily provides a power module 100, and the power module 100 integrates a power switching tube wafer of an in-vehicle power supply into one module. Specifically, the power module 100 provided by the present disclosure includes a plurality of mounting areas 1 provided with power units 2, the power units 2 are provided with switch tube wafers 212, the plurality of mounting areas 1 are configured to meet different insulation voltage resistances of the power units 2, wherein the plurality of mounting areas 1 are used for respectively accessing at least one of an ac voltage, a first dc voltage and a second dc voltage, wherein the first dc voltage may be a dc voltage greater than 60V, and the second dc voltage may be a dc voltage less than or equal to 60V. The switch tube wafer 212 may be selected from one or more of a Si power switch tube wafer, a SiC power switch tube wafer, an IGBT power switch tube wafer, a GaN power switch tube wafer, without limitation of the present disclosure.

It should be noted that the present disclosure is not limited to the arrangement manner of the mounting areas 1, for example, the plurality of mounting areas 1 may be arranged at intervals in the first direction as shown in fig. 1, but in other embodiments, the plurality of mounting areas 1 may be arranged in arrays in the first direction and the second direction, respectively.

It should be noted that the power unit 2 may be one or more of a power factor correction circuit 21, a first conversion circuit 22, such as a high voltage DC-DC conversion circuit, and a second conversion circuit 23, such as a low voltage DC-DC conversion circuit, according to actual needs. The power factor correction circuit 21, the first conversion circuit 22, and the second conversion circuit 23 each include a substrate 211, a plurality of switching transistor wafers 212 provided on the substrate 211, a power terminal 213, and a signal terminal 214. The power terminals 213 may be, for example, power metal pins, and the signal terminals 214 may be, for example, signal metal pins.

The substrate 211 may be a metal substrate, for example, an aluminum substrate, an aluminum alloy substrate, a copper alloy substrate, or the like, and an insulating material such as ceramic is provided between the substrate 211 and the switching tube wafer 212. The metal substrate has good heat dissipation capability, is beneficial to reducing the heat generation of electronic components in the power module 100, and improves the reliability of products. Of course, the substrate 211 may be a copper-clad ceramic substrate. The power terminal 213 and the signal terminal 214 are soldered on the substrate 211, and the source, drain, and gate of the switching tube wafer 212 are connected to the metal substrate 211, respectively, so that the power terminal 213 and the signal terminal 214 can connect the switching tube wafer 212 to an external circuit board.

Furthermore, the power module 100 may comprise a unitary frame to facilitate integration of a plurality of power cells 2 into one power module 100. The frame may be provided with a plurality of mounting holes 31, such as screw holes, for fixing the power module 100, and may also be provided with a plurality of positioning pins 32 or positioning holes for positioning the power module 100.

The technical scheme provided by the embodiment of the disclosure can comprise the following beneficial effects: the present disclosure provides a power module 100 including a plurality of mounting areas 1 provided with power cells 2, the plurality of mounting areas 1 configured to satisfy different insulation voltage resistances of the power cells 2. The arrangement of the installation areas according to the insulation voltage resistance, i.e. the installation areas are divided according to the connected voltage form, different installation areas correspond to the respective insulation voltage resistance requirements, specifically, the power units 2 meeting the same insulation voltage resistance are arranged in the same installation area 1, i.e. the switch tube wafers 212 are arranged in a zoned manner according to the insulation voltage resistance, the switch tube wafers 212 of the power units 2 in different installation areas 1 can be connected to different reference grounds, and the switch tube wafers 212 of the power units 2 in the same installation area 1 are connected to the same reference ground, and the zoned arrangement is favorable for meeting different insulation voltage resistance safety specifications, so that the reliability and the safety of the operation of the power module can be ensured even if the power module 100 faces complex working conditions such as alternating current, high-voltage direct current and low-voltage direct current are simultaneously connected.

An isolation gap 14 may be provided between the plurality of mounting areas 1, that is, the mounting areas 1 satisfying different insulation voltage resistances are formed on the power module 100 by setting the isolation gap, and the setting of the isolation gap can also play a role of isolation protection to a certain extent, for example, when the switching transistor wafer 212 in one mounting area 1 bursts and splashes, at least part of the fragments fall into the isolation gap 14, the fragments are prevented from splashing into the other mounting area 1 as much as possible, and the risk of connecting the mounting areas 1 of two different insulation voltage resistances is avoided. It should be understood that, in addition to forming the mounting region 1 satisfying different insulation voltage resistances in the above-mentioned manner of the isolation gap 14, other structures or methods capable of achieving the same object can be applied to the present disclosure, and will not be described herein.

As shown in fig. 1 and 2, the mounting area 1 is provided with a first mounting area 11, a second mounting area 12, and a third mounting area 13 in a first direction, wherein: the first installation area 11 comprises a switching tube wafer arrangement area of the primary circuit of the power factor correction circuit and the first conversion circuit, which area is connected to the ac power grid, i.e. the reference ground is an ac ground; the second mounting area 12 comprises a switching tube wafer arrangement area of a secondary circuit of the first conversion circuit and a primary circuit of the second conversion circuit, which area is connected to the power cell, i.e. the reference ground is high voltage direct current; the third mounting area 13 comprises a switching tube wafer arrangement area of the secondary circuit of the second conversion circuit, which area is connected to the battery, i.e. is dc-low with reference to ground.

The arrangement of the installation area 1 is actually that the switching tube wafers 212 in the power module 100 are divided according to the accessed voltage form so as to meet the respective different insulation voltage resistances, namely, the switching tube wafers of the power factor correction circuit 21 and the primary circuit 221 of the first conversion circuit in the first installation area 11 are both accessed to an alternating current power grid, the switching tube wafers of the secondary circuit 222 of the first conversion circuit and the primary circuit 231 of the second conversion circuit in the second installation area 12 are both accessed to a power battery, and the switching tube wafers of the secondary circuit 232 of the second conversion circuit in the third installation area 13 are accessed to a storage battery.

Specifically, the power unit 2 includes: a power factor correction circuit 21 and a primary circuit 221 of a first conversion circuit provided in the first mounting region 11; a secondary circuit 222 of the first conversion circuit and a primary circuit 231 of the second conversion circuit disposed in the second mounting region 12; and a secondary circuit 232 of the second conversion circuit disposed in the third mounting region 13. The primary circuit 221 of the first conversion circuit and the primary circuit 231 of the second conversion circuit are connected through a transformer, and the primary circuit 231 of the second conversion circuit and the secondary circuit 232 of the second conversion circuit are connected through a transformer.

As shown in fig. 1, the power module 100 may further include a connection terminal 4, one end of the connection terminal 4 is connected to the second conversion circuit 23, and the other end of the connection terminal 4 is connected to an external circuit by a bolt. In the prior art, the second conversion circuit 23 is usually connected by copper bars, however, considering that the output of the second conversion circuit 23 is low voltage and high current, the copper bars are connected with the circuit board by a welding process, and in addition, the circuit board connected with the output of the second conversion circuit 23 also needs to pass high current, so that copper laying design is needed, in order to meet the over-current requirement, copper thickness and area are large, and the temperature of the welding point is easily taken away by copper laying of the copper bars and the circuit board when the circuit board and the copper bars are welded, so that the temperature of the welding point is insufficient, welding failure occurs, and the production yield is low. The method adopts the mode of bolt connection, can avoid the problem of poor welding caused by adopting copper bar connection, and is reliable in connection and simple in process.

The second conversion circuit 23 is a full-wave rectifying circuit, and due to power and heat dissipation requirements, the full-wave rectification requires a plurality of switch tube wafers 212 in parallel, each switch tube wafer 212 requires a control signal, and if the grid electrode and the source electrode of each switch tube wafer are welded with metal pins, the number of the metal pins of the power module 100 is large and dense, which is inconvenient for design and assembly of a circuit board. To solve this problem, as shown in fig. 3, the second conversion circuit 23 includes at least two sets of signal control branches 2320 connected in parallel, each 2320 including a pair of signal terminals 214 and a plurality of switch transistor wafers 212 (denoted by symbol Q in fig. 3) connected in parallel with the signal terminals 214. That is, the control signals of the rectifying switch tube wafers 212 connected in parallel within the power module 100 are also connected in parallel, so that only two sets of control signals, namely four signal terminals 214 (two of which are each a pair, namely 214-1/214-2) are required. Further, to maintain stability of the switching tube wafer control signals, a resistor 6 is provided between the signal terminal 214 and each of the switching tube wafers 212.

With continued reference to fig. 2, the second conversion circuit 23 is provided with a first connection region 2321, a second connection region 2322, a third connection region 2323, a fourth connection region 2324, and a fifth connection region 2325 along the first direction. The second connection area 2322 and the fourth connection area 2324 are respectively provided with a switching tube wafer 212, the first connection area 2321 and the fifth connection area 2325 are respectively provided with a signal terminal 214, and the third connection area 2323 is connected with an S pole of the switching tube wafer 212 and is connected with an external reference ground. This layout minimizes stray inductance of the internal wiring under a full wave rectifying circuit, which can be verified by simulation experiments.

The metal pins are divided into two types according to the type of signals transmitted, one is a power terminal for transmitting a large current, and the other is a signal terminal for transmitting a low-voltage control signal. The power terminals belong to a high-voltage loop, the signal terminals belong to a low-voltage loop, and in order to avoid signal abnormality and serious electromagnetic interference caused by high-low voltage coupling, as shown in fig. 1, the power terminals 213 and the signal terminals 214 are respectively disposed at two opposite sides of the power unit 2 along the first direction.

In addition, in order to prevent the inside of the power module 100 from being failed due to an excessive temperature, as shown in fig. 2, each of the power units 2 may be provided with one temperature sensor 5, and the temperature sensor 5 may be, for example, a thermistor (NTC). As described above, the mounting areas 1 may be divided according to insulation withstand voltage so that the heat generated when each of the mounting areas 1 operates is different, so that at least one temperature sensor 5 is disposed in each of the mounting areas 1. When the temperature collected by the temperature sensor 5 is too high, the system can take corresponding protection actions. Specifically, when the temperature sensor 5 detects that the temperature of the measured point is smaller than the threshold value, the system operates according to the allowable maximum power, for example, the vehicle-mounted charger charges according to the rated power, and the effective value current flowing through the switch tube wafer is 32A. When the temperature sensor 5 detects that the temperature of the measured point is greater than the threshold value, the charging current is controlled to be smaller than the current threshold value, and the current flowing through the switch tube wafer is smaller than the maximum allowable value at the moment, for example, the detected temperature exceeds the threshold value, the charging current is limited to be not greater than 30A by the vehicle-mounted charger, and the effective value current flowing through the switch tube wafer at the moment is not greater than 30A at the maximum.

When the installation area 1 is configured to meet the different insulation voltage resistance of the power unit 2, for example, the temperature sensor 5 in the ac area needs to meet the insulation requirements of the ac voltage and the second dc voltage, and the temperature sensor 5 in the high-voltage dc area needs to meet the insulation requirements of the first dc voltage and the second dc voltage. While the signal of the temperature sensor 5 belongs to a low-voltage signal, in order to avoid the problem caused by high-low voltage coupling, as shown in fig. 2, the temperature sensor 5 is arranged on the same side as the signal terminal 214, and this arrangement is beneficial to avoiding the interference of the high-low voltage coupling on the temperature sensor 5 and improving the measurement accuracy.

A second object of the present disclosure is to provide a vehicle power supply, which includes the power module 100 in any of the foregoing embodiments, and has all the advantages thereof, which are not described herein.

A third object of the present disclosure is to provide a vehicle that includes the above-described in-vehicle power supply and has all the advantageous effects thereof.

The preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, but the present disclosure is not limited to the specific details of the embodiments described above, and various simple modifications may be made to the technical solutions of the present disclosure within the scope of the technical concept of the present disclosure, and all the simple modifications belong to the protection scope of the present disclosure.

In addition, the specific features described in the above embodiments may be combined in any suitable manner without contradiction. The various possible combinations are not described further in this disclosure in order to avoid unnecessary repetition.

Moreover, any combination between the various embodiments of the present disclosure is possible as long as it does not depart from the spirit of the present disclosure, which should also be construed as the disclosure of the present disclosure.

Claims (15)

1. The power module is characterized by comprising a plurality of installation areas respectively provided with power units, wherein each power unit is respectively provided with a switch tube wafer, the installation areas are configured to meet different insulation voltage resistances of each power unit, and the installation areas are used for being respectively connected with at least one of alternating voltage, first direct voltage and second direct voltage.

2. The power module of claim 1 wherein an isolation gap is provided between a plurality of said mounting regions.

3. The power module of claim 1, wherein the mounting region is provided with a first mounting region, a second mounting region, and a third mounting region along a first direction, wherein: the first mounting area comprises a switching tube wafer arrangement area of a primary circuit of the power factor correction circuit and the first conversion circuit; the second mounting area comprises a switching tube wafer arrangement area of a secondary circuit of the first conversion circuit and a primary circuit of the second conversion circuit; the third mounting region includes a switching transistor wafer arrangement region of a secondary circuit of the second conversion circuit.

4. A power module according to claim 3, wherein the power unit comprises: a primary circuit of a power factor correction circuit and a first conversion circuit disposed in the first mounting region; a secondary circuit of the first conversion circuit and a primary circuit of the second conversion circuit disposed in the second mounting region; and a secondary circuit of the second conversion circuit disposed within the third mounting region.

5. The power module of any of claims 1-4, wherein the power cell comprises: a power factor correction circuit, a first conversion circuit, and a second conversion circuit, wherein the power factor correction circuit, the first conversion circuit, and the second conversion circuit each include: a substrate, a switching transistor wafer, a power terminal and a signal terminal disposed on the substrate.

6. The power module according to claim 5, further comprising a connection terminal, one end of which is connected to the second conversion circuit, and the other end of which is connected to an external circuit by a bolt.

7. The power module of claim 5, wherein the second conversion circuit is a full wave rectifier circuit and the second conversion circuit includes at least two sets of signal control branches connected in parallel, each of the signal control branches including a pair of signal terminals and a plurality of the switching transistor wafers connected in parallel with the signal terminals.

8. The power module of claim 7 wherein a resistor is disposed between the signal terminal and each of the switch tube wafers.

9. The power module according to claim 7, wherein the second conversion circuit is provided with a first connection region, a second connection region, a third connection region, a fourth connection region, and a fifth connection region in a first direction, wherein the second connection region and the fourth connection region are respectively provided with the switching tube wafer, the first connection region and the fifth connection region are provided with the signal terminal, and the third connection region is connected to an S pole of the switching tube wafer and to an external reference ground.

10. The power module of claim 5, wherein the power terminal and the signal terminal are disposed on opposite sides of the power cell in a first direction, respectively.

11. The power module of claim 10, wherein each of the power cells is provided with a temperature sensor, and the temperature sensors are disposed on the same side as the signal terminals.

12. The power module of claim 5, wherein the substrate is a metal substrate, and an insulator is disposed between the substrate and the switching tube wafer.

13. The power module of claim 5, wherein the switch tube wafer is one or more of a Si power switch tube wafer, a SiC power switch tube wafer, an IGBT power switch tube wafer, a GaN power switch tube wafer.

14. A vehicle power supply comprising a power module according to any one of claims 1-13.

15. A vehicle comprising the on-board power supply of claim 14.