CN221262368U - Packaging structure of power device, power device and electronic equipment - Google Patents

Abstract

The utility model relates to the technical field of semiconductor heat dissipation, and provides a packaging structure of a power device, the power device and electronic equipment; wherein, the packaging structure of power device includes: a substrate having a conductive layer on a surface thereof; the conductive heat transfer layer is electrically connected with the conductive layer; the power chip is arranged on the conductive heat transfer layer in a thermal contact manner, and a source electrode of the power chip is electrically connected with the conductive heat transfer layer; the heat dissipation piece is positioned on one side of the conductive heat transfer layer, which is opposite to the substrate, and is in thermal contact with the conductive heat transfer layer so as to transfer heat on the conductive heat transfer layer to the heat dissipation sheet. The packaging structure of the power device, the power device and the electronic equipment provided by the utility model solve the problem that the cross section area of the heat transfer path of the power device is limited, reduce the heat resistance of the heat transfer path and improve the heat dissipation effect of the power device.

Description

Packaging structure of power device, power device and electronic equipment

Technical Field

The present utility model relates to the field of semiconductor heat dissipation technologies, and in particular, to a power device packaging structure, a power device, and an electronic device.

Background

With the development and application of semiconductor technology, after packaging, heat dissipation of a semiconductor power device becomes a technical problem to be solved.

In the related art, a semiconductor power device is packaged by a patch, so that a heat generating surface (mainly a source electrode of the power device) of the power device is connected with a top copper foil of a printed circuit board (Printed Circuit Board, abbreviated as a PCB), heat generated by the power device is guided to the other surface of the PCB by utilizing the heat conductivity of copper in each interlayer via hole on the PCB, and a radiating fin is arranged on the other surface of the PCB, so that the heat is taken away, the heat of the semiconductor power device can be radiated to a certain extent, and the thermal stability of the power device is ensured.

However, in the related art, the cross-sectional area of the heat transfer path of the power device is limited, so that the heat resistance in the heat transfer path is large, and the heat dissipation effect on the power device is poor.

Disclosure of utility model

The utility model provides a packaging structure of a power device, the power device and electronic equipment, which are used for solving the problem that the sectional area of a heat transfer path of the power device is limited in the prior art, reducing the heat resistance of the heat transfer path and improving the heat dissipation effect of the power device.

The utility model provides a packaging structure of a power device, which comprises:

A substrate, the surface of which is provided with a conductive layer;

The conductive heat transfer layer is electrically connected with the conductive layer;

The power chip is arranged on the conductive heat transfer layer in a thermal contact manner, and a source electrode of the power chip is electrically connected with the conductive heat transfer layer;

And the heat dissipation piece is positioned on one side of the conductive heat transfer layer, which is away from the substrate, and is in thermal contact with the conductive heat transfer layer so that heat on the conductive heat transfer layer is transferred to the heat dissipation sheet.

According to the packaging structure of the power device provided by the utility model, the conductive heat transfer layer comprises:

the patch part is attached to the power chip;

a first bonding pad, the source of the power chip is electrically connected with the first bonding pad through a first conductive component;

And the extension part extends to the edge of the substrate along the extension direction of the substrate, and the heat dissipation piece is connected with the extension part in a thermal contact way.

According to the packaging structure of the power device, a heat conduction connecting layer is arranged between the extending part and the heat dissipation piece, and the extending part is connected with the heat dissipation piece through the heat conduction connecting layer.

According to the packaging structure of the power device, the heat conduction connecting layer is a tin welding layer.

According to the packaging structure of the power device, the packaging structure of the power device comprises a plurality of power chips, wherein each power chip is correspondingly arranged on one conductive heat transfer layer; the heat conduction connecting layer is an insulating heat conduction layer.

According to the packaging structure of the power device, which is provided by the utility model, the packaging structure of the power device further comprises a fastener, wherein the substrate is provided with a perforation, and the fastener is arranged through the perforation and is connected with the heat dissipation piece.

According to the packaging structure of the power device, provided by the utility model, at least part of the heat dissipation piece covers the power chip, and a plurality of heat dissipation teeth are arranged on one side of the heat dissipation piece, which is opposite to the substrate.

According to the packaging structure of the power device, the second bonding pad is further arranged on the conducting layer, and the drain electrode of the power chip is electrically connected with the second bonding pad through the second conducting component;

The second bonding pad and the conductive heat transfer layer are positioned on the same layer, and the second bonding pad and the conductive heat transfer layer are separated in an insulating way.

According to the packaging structure of the power device, the packaging structure of the power device further comprises a packaging shell, and the packaging shell at least covers the power chip, the first conductive component connected with the source electrode of the power chip and the second conductive component.

According to the packaging structure of the power device, at least part of the heat dissipation piece covers the packaging shell.

According to the packaging structure of the power device, which is provided by the utility model, the packaging structure of the power device further comprises a conductive connecting layer, and the conductive heat transfer layer and the second bonding pad are connected with the conductive layer through the conductive connecting layer.

According to the packaging structure of the power device, the power chip comprises a gallium nitride chip.

The utility model also provides a power device, comprising the packaging structure of the power device according to any optional example of the foregoing embodiments of the utility model.

The utility model also provides electronic equipment, which comprises the packaging structure of the power device, wherein the packaging structure is used for the power device and is used for packaging the power device.

The utility model provides a packaging structure of a power device, the power device and electronic equipment, wherein a conductive heat transfer layer is electrically connected to a conductive layer on the surface of a substrate, and a power chip is arranged on the conductive heat transfer layer in a thermal contact manner, so that the power chip is attached to the surface of the substrate in a patch mode, and parasitic parameters of the power chip can be effectively controlled; when the power chip works, heat generated at the bottom of the power chip is transferred to the conductive heat transfer layer, so that heat accumulated at the bottom of the power chip is timely evacuated, heat dissipation of the power chip is guaranteed, the temperature of the power chip is reduced, and the performance of the power chip is guaranteed.

The source electrode of the power chip is electrically connected with the conductive heat transfer layer, so that when the power chip works, heat generated by the source electrode of the power chip is mainly concentrated on the conductive heat transfer layer; the heat dissipation element is arranged on one side of the conductive heat transfer layer, which is opposite to the substrate, and is in thermal contact with the conductive heat transfer layer; thus, the heat concentrated on the conductive heat transfer layer can be timely transferred to the heat dissipation piece and dissipated to the outside; compared with the related art, the heat dissipation element is arranged on one side of the conductive heat transfer layer, which is opposite to the substrate, the heat transfer area between the heat dissipation element and the conductive heat transfer layer is not limited by the cross section area of the through hole on the substrate, and the contact area between the heat dissipation element and the conductive heat transfer layer can be effectively increased; the heat transfer area of the power chip to the heat dissipation element is increased, or the sectional area of the heat transfer path of the power chip to the heat dissipation element is increased; the thermal resistance of the heat transfer path is reduced, thereby improving the heat dissipation efficiency of the power chip.

Drawings

In order to more clearly illustrate the utility model or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the utility model, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic diagram of the overall structure of a power device package structure provided in the related art;

Fig. 2 is a cross-sectional view of a power device package structure provided in the related art;

fig. 3 is a schematic diagram of an overall structure of a package structure of a power device according to an embodiment of the present utility model;

Fig. 4 is a cross-sectional view of a package structure of a power device according to an embodiment of the present utility model;

Fig. 5 is a schematic diagram of another overall structure of a package structure of a power device according to an embodiment of the present utility model;

Fig. 6 is another cross-sectional view of a package structure of a power device according to an embodiment of the present utility model;

Fig. 7 is a further cross-sectional view of a package structure of a power device according to an embodiment of the present utility model.

Reference numerals:

10, 100: a substrate; 20: a first copper foil layer; 30, 300: a power chip; 40: a source pad; 50: soft solder; 60: a heat sink; 70: a second copper foil layer; 80-a thermal pad; 200: a conductive heat transfer layer; 400: a heat sink; 500: a thermally conductive connection layer; 600: a fastener; 700: a second bonding pad; 800: packaging the shell; 900: a conductive connection layer;

101: a via hole;

110: a conductive layer; 120: perforating; 210: a patch part; 220: a first bonding pad; 230: an extension; 310: a first conductive member; 320: a second conductive member; 410: heat dissipation teeth.

Detailed Description

Embodiments of the present utility model are described in further detail below with reference to the accompanying drawings and examples. The following examples are illustrative of the utility model but are not intended to limit the scope of the utility model.

In the description of the embodiments of the present utility model, it should be noted that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the embodiments of the present utility model and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the embodiments of the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In describing embodiments of the present utility model, it should be noted that, unless explicitly stated and limited otherwise, the terms "coupled," "coupled," and "connected" should be construed broadly, and may be either a fixed connection, a removable connection, or an integral connection, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in embodiments of the present utility model will be understood in detail by those of ordinary skill in the art.

In embodiments of the utility model, unless expressly specified and limited otherwise, a first feature "up" or "down" on a second feature may be that the first and second features are in direct contact, or that the first and second features are in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the present utility model. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.

With the development and application of semiconductor technology, after packaging, heat dissipation of a semiconductor power device becomes a technical problem to be solved.

Among them, wide band gap semiconductor gallium nitride (GaN) represented by the third generation semiconductor material has many excellent properties which are not possessed by the conventional silicon material, is excellent semiconductor material in high frequency, high voltage and high power applications, and has wide application prospect in civil and military fields.

Therefore, in packaging the wide bandgap semiconductor power device, attention is particularly paid to heat dissipation of the power chip so as to ensure the performance of the power chip.

Fig. 1 is a schematic view of the overall structure of a power device package structure provided in the related art, and fig. 2 is a cross-sectional view of the power device package structure provided in the related art.

Referring to fig. 1 and 2, in the related art, for heat dissipation after packaging the power chip 30, the power chip 30 is connected to the first copper foil layer 20 on the surface of the substrate 10 in a chip-on-package manner. Thereby transferring heat generated from the power chip 30 to the substrate 10.

Specifically, referring to fig. 2, the source pad 40 of the power chip 30 may be connected with the first copper foil layer 20 of the substrate 10 by means of soft solder 50 in particular, so that heat generated by the power chip 30 is transferred to the first copper foil layer 20 through the source pad 40.

In order to timely conduct heat away from the first copper foil layer 20 and dissipate the heat outwards, referring to fig. 1 and 2, a heat sink 60 is generally disposed on a side of the substrate 10 facing away from the power chip 30 in the related art, and the heat sink 60 is connected to the second copper foil layer 70 on a side of the substrate 10 facing away from the power chip 30. It will be appreciated that, referring to fig. 2, in order to ensure electrical connection between the layers on the substrate 10, typically, a plurality of vias 101 are provided on the substrate 10, and the vias 101 are filled with a conductive material, which can connect at least the first copper foil layer 20 and the second copper foil layer 70 on both sides of the substrate 10. In this way, the heat on the first copper foil layer 20 is transferred to the second copper foil layer 70 and from the second copper foil layer 70 to the heat sink 60 by utilizing the heat conductive property of the conductive material in the via 101 of the substrate 10 itself. For example, the heat sink 60 and the second copper foil layer 70 may be connected by a thermal pad 80.

In this way, the conductive material in the via hole 101 of the substrate 10 can be used as a heat transfer path to timely transfer the heat on the first copper foil layer 20 to the outside, so as to timely dissipate the heat of the power chip 30, and ensure the performance of the power chip 30.

However, the heat transfer is performed by the conductive material in the via hole 101 on the substrate 10, and the heat transfer sectional area is limited by the sectional area of the via hole 101, so that the heat transfer resistance on the heat transfer path is high, and the overall heat dissipation effect of the power device is poor.

Aiming at the technical problems in the related art, the embodiment of the utility model provides a packaging structure of a power device, which mainly comprises the following steps: a conductive heat transfer layer is arranged on the conductive layer of the substrate, and the power chip is arranged on the conductive heat transfer layer in a thermal contact manner, so that the electrical connection between the power chip and the substrate is ensured; meanwhile, heat generated by the power chip can be timely transferred to the conductive heat transfer layer, and particularly, a source electrode with concentrated heat of the power chip can be electrically connected with the conductive heat transfer layer, so that the heat is concentrated on the conductive heat transfer layer; and a heat radiating element is arranged on one side of the conductive heat transfer layer, which is away from the substrate, in a thermal contact manner, so that heat on the conductive heat transfer layer is transferred to the heat radiating element for radiating. Therefore, the contact area of the heat radiating piece and the conductive heat transfer layer is not limited by the area of the through hole on the substrate, the contact area of the heat radiating piece and the conductive heat transfer layer can be effectively increased, the sectional area of a heat transfer path is increased, the heat transfer resistance on the heat transfer path is reduced, the heat radiation of the power chip is facilitated, and the working performance of the power chip can be effectively ensured.

In order that the above-recited objects, features and advantages of the present utility model will become more readily apparent, a more particular description of the utility model will be rendered by reference to the appended drawings and appended detailed description.

Fig. 3 is a schematic diagram of an overall structure of a package structure of a power device according to an embodiment of the present utility model, and fig. 4 is a cross-sectional view of a package structure of a power chip according to an embodiment of the present utility model.

Referring to fig. 3 and 4, an embodiment of the present utility model provides a package structure of a power device, including: a substrate 100, a conductive heat transfer layer 200, a power chip 300, and a heat sink 400.

Specifically, in the embodiment of the present utility model, the substrate 100 may be any one of a PCB, an integrated circuit board, or a flexible circuit board. In the embodiment of the utility model, a PCB is specifically taken as a specific example for illustration.

It will be appreciated that during the manufacturing process of the PCB, a conductive layer 110 is typically disposed on the surface of the PCB, and the conductive layer 110 is used to connect circuits, and the material of the conductive layer 110 may be copper, silver, nickel-gold, nickel-palladium-gold or aluminum, and in the embodiment of the present utility model, copper foil is used as a specific example of the conductive layer 110.

It will be appreciated that a layer of insulating material is typically added to the top layer of the copper foil as a protection layer, and that the PCB may be selectively removed during the routing of the circuit so that the copper foil may be electrically connected to the devices in the routed circuit, which may also be referred to as a windowing process for the PCB in some examples.

In the embodiment of the present utility model, the conductive heat transfer layer 200 is electrically connected to the conductive layer 110, and referring to fig. 4, the conductive heat transfer layer 200 is disposed on a surface of the conductive layer 110 facing away from the substrate 100, and an electrical signal can be transmitted between the conductive heat transfer layer 200 and the conductive layer 110 by means of electrical connection. The conductive heat transfer layer 200 may be made of the same or similar material as the conductive layer 110, i.e., the conductive heat transfer layer 200 may be made of good electrical and thermal conductors.

In the embodiment of the present utility model, the power chip 300 may be a wide bandgap semiconductor chip, such as a gallium nitride chip, a zinc oxide (ZnO) chip, a diamond, an aluminum nitride (AlN) chip, and a silicon carbide (SiC) chip; of course, in some examples, the power chip 300 may also be a silicon (Si) based chip, a gallium arsenide (GaAs) chip, an indium phosphide (InP) chip, and the like. As a specific example, a gallium nitride (GaN) chip is illustrated in an embodiment of the present utility model.

Specifically, referring to fig. 4, in the embodiment of the present utility model, the power chip 300 is disposed on the conductive heat transfer layer 200 in thermal contact, and the source of the power chip 300 is electrically connected to the conductive heat transfer layer 200.

It will be appreciated that typically the power chip 300 includes a source, a drain, and a gate; the source is connected with various signal lines, and the heat of the power chip 300 is mainly concentrated on the source; therefore, in the embodiment of the present utility model, the source electrode of the power chip 300 is electrically connected to the conductive heat transfer layer 200, and the signal line can be specifically electrically connected to the conductive heat transfer layer 200, so as to connect to the source electrode of the power chip, which is equivalent to using the conductive heat transfer layer 200 as the source electrode of the power chip 300, so that heat generated during operation of the power chip 300 is mainly concentrated on the conductive heat transfer layer 200.

It should be noted that, in the embodiment of the present utility model, the thermal contact may be a direct contact, for example, the power chip 300 is pressed onto the conductive heat transfer layer 200; the thermal contact may also be an indirect contact, such as by a layer of thermally conductive glue adhering the power chip 300 to the conductive heat transfer layer 200.

Referring to fig. 3 and 4, in the above example, the heat sink 400 is located on the side of the conductive heat transfer layer 200 facing away from the substrate 100, and the heat sink 400 is in thermal contact with the conductive heat transfer layer 200, so that the heat on the conductive heat transfer layer 200 is transferred to the heat sink 60.

Specifically, in the embodiment of the present utility model, the heat sink 400 may be a good conductor of heat; when the heat sink 400 is specifically disposed, the surface (e.g., the heat dissipation surface) of the heat sink 400 may be a rough surface, so as to increase the convection contact area between the heat sink 400 and the air in the external environment, and effectively improve the heat dissipation effect.

In some specific examples, heat sink 400 may be a sheet-like heat sink.

With continued reference to fig. 4, the heat sink 400 is disposed on the same side of the conductive heat transfer layer 200 as the power chip 300, and it is understood that the heat sink 400 may be disposed in a region of the conductive heat transfer layer 200 other than the region where the power chip 300 is disposed; in other words, the contact area of the heat sink 400 and the conductive heat transfer layer 200 does not coincide with the contact area of the power chip 300 and the conductive heat transfer layer 200. The manner in which the heat sink 400 and the conductive heat transfer layer 200 are in thermal contact is similar to the manner in which the power chip 300 is disposed on the conductive heat transfer layer 200 in thermal contact, which is not described in detail in the embodiment of the present utility model.

According to the packaging structure of the power device, the conductive heat transfer layer 200 is electrically connected to the conductive layer 110 on the surface of the substrate 100, and the power chip 300 is arranged on the conductive heat transfer layer 200 in a thermal contact manner, so that the power chip 300 is attached to the surface of the substrate 100 in a patch mode, and parasitic parameters of the power chip 300 can be effectively controlled; when the power chip 300 works, heat generated at the bottom of the power chip 300 is transferred to the conductive heat transfer layer 200, so that heat accumulated at the bottom of the power chip 300 is timely evacuated, heat dissipation of the power chip 300 is guaranteed, the temperature of the power chip 300 is reduced, and performance of the power chip 300 is guaranteed.

By electrically connecting the source of the power chip 300 with the conductive heat transfer layer 200, the heat generated by the source of the power chip 300 is primarily concentrated in the conductive heat transfer layer 200 when the power chip 300 is in operation; the heat dissipation element 400 is arranged on one side of the conductive heat transfer layer 200, which is away from the substrate 100, and the heat dissipation element 400 is in thermal contact with the conductive heat transfer layer 200; thus, the heat concentrated on the conductive heat transfer layer 200 can be timely transferred to the heat sink 400 and dissipated to the outside; compared with the related art, the heat dissipation element 400 is arranged on the side of the conductive heat transfer layer 200, which is away from the substrate 100, so that the heat transfer area between the heat dissipation element 400 and the conductive heat transfer layer 200 is not limited by the cross-sectional area of the via hole on the substrate 100, and the contact area between the heat dissipation element 400 and the conductive heat transfer layer 200 can be effectively increased; i.e., increasing the heat transfer area of the power chip 300 to the heat sink 400, or increasing the cross-sectional area of the heat transfer path of the power chip 300 to the heat sink 400; the thermal resistance of the heat transfer path is reduced, thereby improving the heat dissipation efficiency of the power chip 300.

In an alternative embodiment of the present utility model based on the above embodiments, referring to fig. 4, the conductive heat transfer layer 200 includes: a patch portion 210, a first pad 220, and an extension portion 230.

Specifically, in the embodiment of the present utility model, the power chip 300 is attached to the patch portion 210 of the conductive heat transfer layer 200, and for example, the power chip 300 is attached to the patch portion 210 by the heat conductive adhesive described in the previous embodiment of the present utility model. That is, in the embodiment of the present utility model, the power chip 300 is packaged by using a patch package, so that parasitic parameters of the power chip 300 package can be effectively reduced or reduced.

In addition, in the embodiment of the utility model, the bottom of the power chip 300 is tightly connected with the conductive heat transfer layer 200 by the attaching mode, so that the heat transfer resistance between the power chip 300 and the conductive heat transfer layer 200 is reduced; when the power chip 300 is operated, heat generated by the power chip 300 can be timely transferred to the conductive heat transfer layer 200.

It will be appreciated that, referring to fig. 4, in the embodiment of the present utility model, the first pads 220 and the patch portions 210 are disposed along the surface of the substrate 100. Wherein, the source of the power chip 300 is electrically connected to the first pad 220 through the first conductive member 310.

In this embodiment of the present utility model, the first conductive member 310 may be a conductive wire, and by electrically connecting one end of the conductive wire with the source of the power chip 300, the other end of the conductive wire is electrically connected with the first bonding pad 220, so as to further electrically connect the source of the power chip 300 with the first bonding pad 220.

It will be appreciated that in some alternative examples of embodiments of the utility model, the first conductive member 310 may also be a metal strip, such as an aluminum strip, an aluminum foil strip, or a copper foil strip. The metal tape has smaller impedance, and the number of wires can be reduced.

In the embodiment of the present utility model, the source of the power chip 300 and the first pad 220 are electrically connected through the first conductive member 310, so that the signal line that needs to be connected to the source of the power chip may be connected to the first pad 220, which is equivalent to using the first pad 220 (or the conductive heat transfer layer 200) as the source (in some examples, also referred to as a source pad) of the power chip 300; in this way, on the one hand, it is ensured that the source of the power chip 300 has enough space to connect with various signal lines, for example, a plurality of pins may be disposed on the conductive heat transfer layer 200, and connected with the respective signal lines through the pins. Thus, when the source transmits a signal, the heat of the source is mainly concentrated on the conductive heat transfer layer 200, or in some examples, it is also understood that the heat of the source is mainly concentrated on the first pad 220.

In the embodiment of the present utility model, referring to fig. 3 and 4, the extension part 230 extends to the edge of the substrate 100 along the extension direction of the substrate 100, and when specifically arranged, the heat sink 400 is connected in thermal contact with the extension part 230.

Specifically, in the embodiment of the present utility model, referring to fig. 4, the extension portion 230 may extend at least to the edge of the substrate 100 toward the side away from the power chip 300 (for example, in fig. 3, may extend to the edge of the substrate 100 along the positive direction shown by the x-axis in fig. 3, it should be noted that, in the embodiment of the present utility model, the extension portion 230 is not numbered in fig. 3), so that the area of the extension portion 230 may be effectively increased, and the contact area between the heat dissipation element 400 and the extension portion may be increased. It will be appreciated that in some examples, taking fig. 3 as an example, extension 230 (not numbered in fig. 3) may also extend to the edge of substrate 100 in both the positive and negative directions shown in the y-axis of fig. 3.

Of course, it will be appreciated that the extension 230 may extend in both the direction shown by the x-axis and the direction shown by the y-axis of FIG. 3 (extension not numbered in FIG. 3).

In the embodiment of the present utility model, by attaching the power chip 300 to the patch portion 210 of the conductive heat transfer layer 200, the source of the power chip 300 is electrically connected to the first pad 220 of the conductive heat transfer layer 200 through the first conductive member 310; in this way, heat generated when the power chip 300 operates is mainly concentrated on the conductive heat transfer layer 200; in addition, in the embodiment of the present utility model, the extension portion 230 is disposed along the extending direction of the substrate 100, and the extension portion 230 extends to the edge of the substrate 100, so that the area of the conductive heat transfer layer 200 is effectively increased, that is, after the heat dissipation element 400 is connected with the extension portion 230 in thermal contact, the contact area between the heat dissipation element 400 and the conductive heat transfer layer 200 is effectively increased, the heat transfer resistance on the heat transfer path is reduced, the heat dissipation efficiency of the power chip 300 is improved, and the performance of the power chip 300 is effectively ensured.

Fig. 5 is a schematic diagram of another overall structure of a package structure of a power device according to an embodiment of the present utility model, and fig. 6 is another cross-sectional view of the package structure of the power device according to the embodiment of the present utility model.

Referring to fig. 5 and 6, in some alternative examples of the embodiment of the present utility model, a heat conductive connection layer 500 is provided between the extension 230 and the heat sink 400, and the extension 230 is connected to the heat sink 400 through the heat conductive connection layer 500.

In one specific example of an embodiment of the present utility model, the thermally conductive connection layer 500 may be soft solder (e.g., braze); that is, in the embodiment of the present utility model, the heat dissipation element 400 and the extension portion 230 may be welded by brazing, so that on one hand, the stability of the connection between the heat dissipation element 400 and the extension portion 230 can be ensured, and on the other hand, the heat transfer performance between the heat dissipation element 400 and the extension portion 230 can be ensured, and the heat transfer resistance between the extension portion 230 and the heat dissipation element 400 is effectively reduced.

It is also understood that in some specific examples of embodiments of the present utility model, the thermally conductive connection layer 500 may also be a thermally conductive glue (e.g., a thermally conductive silicone or a thermally conductive rubber, etc.). That is, in the embodiment of the present utility model, the heat sink 400 and the extension portion 230 may be bonded together by a heat-conducting adhesive, so as to achieve heat transfer and fixed connection between the extension portion 230 and the heat sink 400.

In an alternative example of an embodiment of the present utility model, the thermally conductive connection layer 500 may be disposed at a portion of the contact surface of the extension 230 and the heat sink 400. As a specific example of the embodiment of the present utility model, the heat conductive connection layer 500 may be disposed on the entire contact surface of the extension 230 and the heat sink 400, that is, the heat conductive connection layer 500 may be covered on the entire surface of the extension 230 and then the heat sink 400 may be covered and connected on the heat conductive connection layer 500 when the specific arrangement is performed. In this way, the gap or the clearance between the heat sink 400 and the extension portion 230 can be effectively reduced, so that the heat transfer resistance between the extension portion 230 and the heat sink 400 can be reduced, and the heat transfer efficiency of heat transferred from the conductive heat transfer layer 200 to the heat sink 400, that is, the heat dissipation efficiency of the power chip 300, is improved. In the embodiment of the present utility model, the extension part 230 is connected to the heat dissipation element 400 through the heat conduction connection layer 500, so that the heat dissipation element 400 is conveniently fixed and connected to the conductive heat transfer layer 200, and the installation efficiency of the heat dissipation element 400 and the stability of heat transfer between the conductive heat transfer layer 200 are improved.

As a specific example of an embodiment of the present utility model, the thermally conductive connection layer 500 is a solder layer.

By using the soldering layer as the heat conductive connection layer 500, the heat conductive connection layer 500 has good electrical and thermal conductivity of soldering, and the heat transfer efficiency of the electrically conductive heat transfer layer 200 to the heat sink 400 is improved. In addition, the soldering temperature is low, deformation of the extension part 230 and the heat sink 400 due to the soldering temperature is avoided, the soldering cost is low, and the processing cost of connection between the extension part 230 and the heat sink 400 can be effectively saved.

It will be appreciated that in some alternative examples of embodiments of the present utility model, multiple power chips 300 may be packaged simultaneously in a package structure of a power device when the power chips 300 are packaged. Only one power chip 300 is shown as a specific example in the drawings of the embodiments of the present utility model.

It will also be appreciated that when packaging multiple power chips 300, each power chip 300 of the multiple power chips 300 may perform a different function, and thus, it is generally desirable to maintain isolation between the individual power chips 300. That is, each power chip 300 is disposed on one conductive heat transfer layer 200. I.e. the number of conductive heat transfer layers 200 may correspond to the number of power chips 300. In a specific arrangement, the conductive layer 110 and the conductive heat transfer layer 200 on the substrate 100 may be etched and windowed, so as to insulate the power chips 300.

As a specific example of the embodiment of the present utility model, one heat sink 400 may be used to dissipate heat from the plurality of power chips 300; that is, the heat sink 400 may be simultaneously connected in thermal contact with the plurality of conductive heat transfer layers 200, so that heat generated on the plurality of power chips 300 is transferred to the heat sink 400 through the conductive heat transfer layers 200 for heat dissipation. It will be appreciated that, in the embodiment of the present utility model, the heat dissipation member 400 is generally made of a good thermal conductor, for example, a metal material (such as aluminum foil, copper foil, etc.), so as to ensure that the power chips 300 do not interfere with each other, and the heat conductive connection layer 500 between the extension portion 230 and the heat dissipation member 400 is an insulating heat conductive layer. In this way, the individual power chips 300 can be prevented from interfering with each other.

Specifically, in the embodiment of the present utility model, the insulating and heat conducting layer may be the heat conducting glue described in the foregoing embodiment of the present utility model.

In the embodiment of the utility model, the conductive connection layer 900 is an insulating and heat-conducting layer, so that when a plurality of power chips 300 are arranged on the substrate 100, mutual insulation among the power chips 300 can be ensured, and normal operation of functions of the power chips 300 is ensured; in addition, the normal heat dissipation of each power chip 300 can be ensured, and the heat dissipation efficiency of each power chip 300 is improved.

Fig. 7 is a further cross-sectional view of a package structure of a power device according to an embodiment of the present utility model.

Referring to fig. 7, in another alternative embodiment of the present utility model, the package structure of the power device further includes a fastener 600, the substrate 100 is provided with a through hole 120, and the fastener 600 is disposed through the through hole 120 and connected to the heat sink 400.

Specifically, in embodiments of the present utility model, the fastener 600 may be a screw, bolt, or threaded rod. The inner wall of the through hole 120 on the substrate 100 may be a smooth surface, that is, no threads may be provided on the inner wall of the through hole 120, and the screw may only pass through the through hole 120; it will be appreciated that the heat sink 400 may also be provided with fastening holes, and the inner walls of the fastening holes may be specifically provided with threads, that is, the fastening holes are in threaded engagement with the fastening members 600, so as to fasten the heat sink 400 to the substrate 100. In some alternative examples, the fastening holes on the heat sink 400 may be blind holes. In other examples of embodiments of the present utility model, the fastening holes on the heat sink 400 may also be self-tapping holes.

It will also be appreciated that the substrate 100 typically has multiple layers, each layer having circuitry disposed thereon; in the embodiment of the present utility model, the through holes 120 may be disposed in a region of the substrate 100 where no circuit is disposed, for example, the through holes 120 may be disposed at an edge of the substrate 100, so as to avoid damage to the circuit of each layer of the substrate 100.

It will be appreciated that, referring to fig. 7, in the embodiment of the present utility model, since the conductive layer 110 is disposed on the substrate 100, the conductive heat transfer layer 200 is disposed on the conductive layer 110; thus, in embodiments of the present utility model, the fastener 600 passes through the conductive layer 110 and the conductive heat transfer layer 200 in sequence while passing through the substrate 100 and being connected to the heat sink 400. That is, after the heat dissipation member 400 is fastened to the substrate 100 by the fastening member 600, the heat dissipation member 400 can be tightly pressed on the conductive heat transfer layer 200 by the fastening force provided by the fastening member 600, so that the gap between the heat dissipation member 400 and the fastening member 600 can be effectively reduced, and the heat transfer efficiency of the conductive heat transfer layer 200 to the heat dissipation member 400, that is, the heat dissipation efficiency of the power chip 300 is improved.

In the embodiment of the utility model, the fastener 600 passes through the through hole 120 on the substrate 100 and then is connected with the heat dissipation element 400, so that the heat dissipation element 400 is fastened and connected on the substrate 100, thus improving the stability of thermal contact between the fastener 600 and the conductive heat transfer layer 200, improving the heat transfer efficiency of the conductive heat transfer layer 200 to the heat dissipation element 400, and ensuring the effective heat dissipation of the power chip 300.

In other alternative examples of the embodiment of the present utility model, as shown in fig. 7, a heat conducting connection layer 500 may be disposed between the conductive heat transfer layer 200 and the heat dissipation element 400, and the conductive heat transfer layer 200 and the heat dissipation element 400 may be connected through the heat conducting connection layer 500; and is simultaneously connected with the heat sink 400 through the through holes 120 on the substrate 100 by the fastener 600. That is, in the embodiment of the present utility model, the heat conductive connection layer 500 and the fastening member 600 can simultaneously fasten and connect the heat sink 400, thereby ensuring the heat transfer efficiency of the heat transfer of the heat conductive heat transfer layer 200 to the heat sink 400.

In some alternative examples of embodiments of the present utility model, referring to fig. 4, 6 and 7, at least part of the heat sink 400 covers the power chip 300, and a side of the heat sink 400 facing away from the substrate 100 is provided with a plurality of heat dissipation teeth 410.

It will be appreciated that, as shown in fig. 4, 6 and 7, after the power chip 300 is disposed on the substrate 100, the heat sink 400 needs to be connected to the conductive heat transfer layer 200 on the substrate 100, and thus, the heat sink 400 needs to avoid a partial area where the power chip 300 is disposed (for example, as shown in fig. 4, the heat sink 400 may be connected in thermal contact with the conductive heat transfer layer 200 on the left side in fig. 4). In order to ensure the heat exchange efficiency between the heat dissipating member 400 and the external environment (such as air), that is, to improve the efficiency of heat transfer from the heat dissipating fin 60 to the external environment, referring to fig. 4, 6 and 7, in the embodiment of the present utility model, after the part of the heat dissipating member 400 extends beyond the power chip 300, the heat dissipating member 400 may extend toward the direction of the power chip 300, so that the contact area between the heat dissipating member 400 and the external environment may be effectively increased, and the heat dissipating efficiency may be improved.

It should be further understood that, in the embodiment of the present utility model, the heat dissipating teeth 410 may be arranged at intervals along the extending direction of the heat dissipating member 400, and when the heat dissipating teeth 410 are specifically arranged, the heat dissipating teeth may be formed by grooving the surface of the heat dissipating member 400 facing away from the substrate 100. In this way, by arranging the heat dissipation teeth 410, the contact area between the heat dissipation element 400 and the external environment is effectively increased, so that the heat transfer efficiency of the heat dissipation element 400 to the external environment is improved, and the heat dissipation efficiency is improved.

In the embodiment of the present utility model, at least part of the heat dissipation element 400 covers the power chip 300, and a plurality of heat dissipation teeth 410 are disposed on a side of the heat dissipation element 400 facing away from the substrate 100; in this way, the contact area between the heat dissipation element 400 and the external environment can be effectively increased, so that the heat transfer efficiency of the heat dissipation element 400 to the external environment is improved, and the heat dissipation efficiency is improved.

With continued reference to fig. 4, 6, and 7, in some alternative examples of embodiments of the present utility model, a second pad 700 is further disposed on the conductive layer 110, and the drain electrode of the power chip 300 is electrically connected to the second pad 700 through the second conductive member 320; wherein the second bonding pad 700 is located at the same layer as the conductive heat transfer layer 200, and the second bonding pad 700 is insulated from the conductive heat transfer layer 200.

Specifically, the second pad 700 may be manufactured integrally with the conductive heat transfer layer 200, and a portion of the conductive heat transfer layer 200 is removed by means of secondary etching, cutting, photolithography, or the like, thereby forming the conductive heat transfer layer 200 and the second pad 700. Of course, in some possible examples, an insulating member may be filled or deposited in a gap between the conductive heat transfer layer 200 and the second pad 700, thereby insulating the second pad 700 from the conductive heat transfer layer 200.

It will be appreciated that in embodiments of the present utility model, the second conductive member 320 may be the same as or similar to the first conductive member 310 in the previous embodiments of the present utility model, and reference may be made specifically to the detailed description of the first conductive member 310 in the previous embodiments of the present utility model.

In the embodiment of the utility model, the drain electrode of the power chip 300 is connected with the second bonding pad 700 by arranging the second conductive component 320, which is equivalent to extending the drain electrode of the power chip 300 to the second bonding pad 700, so that the drain electrode of the power chip 300 is connected with the electric signal of the substrate 100 through the second bonding pad 700, and the electric signal transmission between the power chip 300 and the substrate 100 is facilitated.

With continued reference to fig. 4, 6, and 7, in other alternative examples of the present utility model, the package structure of the power device further includes a package case 800, where the package case 800 covers at least the power chip 300, the first conductive member 310, and the second conductive member 320.

Specifically, in the embodiment of the present utility model, the package housing 800 may be epoxy resin, polyimide, polyamide, etc., and the specific selection of the package housing 800 may refer to the placement of the patch package in the related art, which is not described in detail in the embodiment of the present utility model.

It will be appreciated that in some examples of embodiments of the present utility model, portions of second pad 700 may be exposed, i.e., package housing 800 may cover portions of second pad 700, such as those shown with reference to fig. 4, 6, and 7, and sidewalls of second pad 700 may be exposed, thereby facilitating connection of second pad 700 to other circuits or signal transmission lines.

In the embodiment of the utility model, the package housing 800 is provided, and the package housing 800 at least covers the power chip 300, the first conductive part 310 and the second conductive part 320, so that the package housing 800 can protect the power chip 300, the first conductive part and the second conductive part, and also has the functions of installing, fixing and sealing the chip, and the like, isolating the power chip 300 from the outside, preventing impurities in the air from corroding the power chip 300, and avoiding the problem of performance degradation of the power chip 300 caused by corrosion, and on the other hand, the chip packaged by the package housing 800 is convenient to install and transport.

With continued reference to fig. 4, 6 and 7, in alternative examples of embodiments of the utility model, at least a portion of the heat sink 400 covers the package housing 800.

Specifically, in the embodiment of the present utility model, the power chip 300, the first conductive component 310 and the second conductive component 320 may be first protected by the package housing 800; then, the heat sink 400 is connected to the conductive heat transfer layer 200, such that a portion of the heat sink 400 is located on a side of the package body 800 facing away from the substrate 100, that is, at least a portion of the heat sink 400 covers the package body 800. In this way, in terms of structure, the substrate 100, the power chip 300, the package case 800 and the heat sink 400 are stacked, so that the package structure of the whole power device is more compact, which is beneficial to the miniaturization design of the power device.

In some alternative examples of embodiments of the present utility model, as shown with reference to fig. 4, 6 and 7, there is a gap between the heat sink 400 and the package housing 800.

In a specific arrangement, a certain gap may be reserved between the heat dissipation element 400 and a side of the package housing 800 facing away from the power chip 300. It will be appreciated that typically a significant amount of heat is generated on the side of the power chip 300 that is connected to the substrate 100 (e.g., the conductive heat transfer layer 200 or the first bond pad 220), but that typically less heat is generated on the side of the chip that faces away from the substrate 100 and at a lower temperature. In the embodiment of the utility model, a certain gap is arranged between the heat dissipation element 400 and the package shell 800, so that air can be utilized to insulate heat, heat on the heat dissipation element 400 is prevented from being transferred to the package shell 800, and the heat dissipation effect on the power chip 300 is ensured.

In a specific example of the embodiment of the present utility model, with continued reference to fig. 7, the package structure of the power device further includes a conductive connection layer 900, and the conductive heat transfer layer 200 and the second pad 700 are connected to the conductive layer 110 through the conductive connection layer 900.

Specifically, in the embodiment of the present utility model, the conductive connection layer 900 may specifically be conductive adhesive. In a specific arrangement, a conductive adhesive may be coated or sprayed on the conductive layer 110, and then the conductive heat transfer layer 200 and the second bonding pad 700 are adhered to the conductive adhesive, so as to connect the conductive heat transfer layer 200 and the conductive layer 110, and electrically connect the second bonding pad 700 and the conductive layer 110.

It will be appreciated that in the embodiment of the present utility model, the conductive heat transfer layer 200 is insulated from the second pad 700, and thus, the portion of the conductive layer 110 between the conductive heat transfer layer 200 and the second pad 700 also needs to be etched or lithographically processed, so as to ensure insulation between the conductive heat transfer layer 200 and the second pad 700.

In some alternative examples of embodiments of the present utility model, the conductive connection layer 900 may also be a solder layer, such as a braze or solder layer.

In the embodiment of the present utility model, the conductive heat transfer layer 200 and the second bonding pad 700 are electrically connected with the conductive layer 110 through the conductive connection layer 900, so that the stability of the electrical signal connection between the conductive layer 110 and the conductive heat transfer layer 200 on the substrate 100 and between the conductive heat transfer layer 200 and the second bonding pad 700 is ensured, that is, the running stability of the power chip 300 is ensured.

The embodiment of the utility model also provides a power device, which comprises the packaging structure of the power device provided by any optional example of the previous embodiment of the utility model.

The utility model also provides electronic equipment, which comprises the packaging structure of the power device provided by any optional example of the previous embodiment of the utility model.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model.

Claims (14)

1. A package structure of a power device, comprising:

A substrate (100), wherein a conductive layer (110) is provided on the surface of the substrate (100);

a conductive heat transfer layer (200), the conductive heat transfer layer (200) being electrically connected to the conductive layer (110);

A power chip (300), wherein the power chip (300) is arranged on the conductive heat transfer layer (200) in a thermal contact manner, and a source electrode of the power chip (300) is electrically connected with the conductive heat transfer layer (200);

and the heat dissipation piece (400) is positioned on one side of the conductive heat transfer layer (200) facing away from the substrate (100), and the heat dissipation piece (400) is in thermal contact with the conductive heat transfer layer (200) so that heat on the conductive heat transfer layer (200) is transferred to the heat dissipation piece (400).

2. The packaging structure of a power device according to claim 1, wherein the conductive heat transfer layer (200) comprises:

A patch part (210), wherein the power chip (300) is attached to the patch part (210);

A first pad (220), a source of the power chip (300) being electrically connected to the first pad (220) through a first conductive member (310);

And an extension part (230), wherein the extension part (230) extends to the edge of the substrate (100) along the extension direction of the substrate (100), and the heat dissipation element (400) is connected with the extension part (230) in a thermal contact manner.

3. The packaging structure of a power device according to claim 2, wherein a heat conducting connection layer (500) is provided between the extension portion (230) and the heat sink (400), and the extension portion (230) is connected to the heat sink (400) through the heat conducting connection layer (500).

4. A package structure of a power device according to claim 3, characterized in that the thermally conductive connection layer (500) is a solder layer.

5. A power device package according to claim 3, wherein the power device package comprises a plurality of power chips (300), each power chip (300) being disposed on one of the conductive heat transfer layers (200); the heat conducting connection layer (500) is an insulating heat conducting layer.

6. The packaging structure of a power device according to any one of claims 1 to 5, further comprising a fastener (600), wherein the substrate (100) is provided with a through hole (120), and the fastener (600) is penetrated through the through hole (120) and connected to the heat sink (400).

7. The packaging structure of a power device according to any of claims 1-5, wherein at least part of the heat sink (400) covers the power chip (300), and a side of the heat sink (400) facing away from the substrate (100) is provided with a plurality of heat dissipating teeth (410).

8. The packaging structure of a power device according to any one of claims 1 to 5, wherein a second bonding pad (700) is further provided on the conductive layer (110), and a drain electrode of the power chip (300) is electrically connected to the second bonding pad (700) through a second conductive member (320);

The second bonding pad (700) is positioned on the same layer as the conductive heat transfer layer (200), and the second bonding pad (700) is separated from the conductive heat transfer layer (200) in an insulating way.

9. The power device package structure of claim 8, further comprising a package housing (800), the package housing (800) covering at least the power chip (300), the first conductive member (310) of the power chip (300) source connection, and the second conductive member (320).

10. The packaging structure of a power device according to claim 9, characterized in that at least part of the heat sink (400) covers the packaging housing (800).

11. The power device package structure of claim 8, further comprising a conductive connection layer (900), wherein the conductive heat transfer layer (200) and the second pad (700) are connected to the conductive layer (110) through the conductive connection layer (900).

12. The packaging structure of a power device according to any of claims 1-5, characterized in that the power chip (300) comprises a gallium nitride chip.

13. A power device comprising the power device package of any of claims 1-12.

14. An electronic device comprising the packaging structure of the power device of any one of claims 1-12.