CN221254691U - Rod-shaped silicon carbide deposition device - Google Patents
Rod-shaped silicon carbide deposition device Download PDFInfo
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- CN221254691U CN221254691U CN202323097407.4U CN202323097407U CN221254691U CN 221254691 U CN221254691 U CN 221254691U CN 202323097407 U CN202323097407 U CN 202323097407U CN 221254691 U CN221254691 U CN 221254691U
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- 230000008021 deposition Effects 0.000 title claims abstract description 83
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 85
- 239000002826 coolant Substances 0.000 claims abstract description 20
- 238000005192 partition Methods 0.000 claims abstract description 6
- 238000011084 recovery Methods 0.000 claims abstract description 5
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 239000000969 carrier Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 7
- 239000003921 oil Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 29
- 239000000843 powder Substances 0.000 abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 7
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- 229910001220 stainless steel Inorganic materials 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
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- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
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- 229910052715 tantalum Inorganic materials 0.000 description 3
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- 229910052721 tungsten Inorganic materials 0.000 description 3
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- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000975 Carbon steel Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
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- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 1
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- 239000008204 material by function Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model discloses a rod-shaped silicon carbide deposition device, which comprises a furnace cylinder and a chassis, wherein the furnace cylinder and the chassis are enclosed into a furnace chamber, and an air inlet pipe, an air outlet pipe and a deposition assembly are arranged on the chassis in a penetrating way; the furnace cylinder is of a double-layer side wall structure, the lower part of the outer wall of the furnace cylinder is provided with an inlet I, the upper part of the outer wall of the furnace cylinder is provided with an outlet I, and a spiral partition plate is arranged on the outer surface of the inner wall of the furnace cylinder; the cooling medium entering the cavity in the side wall of the furnace from the inlet I can flow upwards in a spiral way and flow out through the outlet I. The inside of the chassis is hollow, an inlet II and an outlet II are arranged on the chassis, a cooling medium entering from the inlet II can flow in a hollow area of the chassis and flow out from the outlet II, and the outlet I and the outlet II are connected with an energy recovery system. The device can be used for preparing the rod-shaped silicon carbide material, overcomes the defect that the silicon carbide material prepared by the traditional CVD method is in a powder form, has the advantages of large material volume, high density and easy collection and treatment of products, and can recover heat for comprehensive utilization.
Description
Technical Field
The utility model relates to the technical field of silicon carbide deposition, in particular to a rod-shaped silicon carbide deposition device.
Background
Silicon carbide single crystal Substrates (SiC) are third generation compound semiconductor materials, and compound materials composed of two elements of carbon and silicon are mainly divided into conductive type and semi-insulating type, wherein the conductive silicon carbide substrates (silicon carbide epitaxy) are mainly used for manufacturing high temperature and high voltage resistant power devices, and are widely applied to the fields of electronic and electric power at present, such as new energy automobiles, photovoltaics, smart grids, rail transit and the like, and the market scale is larger; in addition, the semi-insulating silicon carbide substrate (gallium nitride epitaxy) is mainly applied to the fields of filtering radio frequency devices and the like, such as a power amplifier in 5G communication, a radio detector in national defense and the like, and along with the acceleration construction of a 5G communication network, market demands are obviously improved.
The current method for preparing the silicon carbide single crystal substrate is mainly a PVT method, silicon carbide powder is used as a raw material in the PVT method, and silicon carbide is sublimated and crystallized under the conditions of low pressure and high temperature to form the silicon carbide single crystal, so that various parameters of the SiC powder directly influence the growth quality and the electrical property of the high-purity semi-insulating single crystal.
The CVD method (vapor deposition method) is a method of obtaining ultrafine, high purity SiC powder by high temperature reaction of gases, wherein Si sources are typically SiH4, siCl4, and the like, and C sources are typically CH4, C2H2, CCl4, and the like. The gases such as (CH 3) 2SiCl2, si (CH 3) 4, CH3SiCl3 and the like can simultaneously provide Si source and C source, and the purities of the gases are above 99.999 percent. For example, huang et al （HUANG Z R,LIANG B,JIANG D L,et al.Preparation of nanocrystal SiC powder by chemical vapour deposition[J].Journal of Materials Science,1996,31(16):4327-4332） adopts CVD technology, takes (CH 3) 2SiCl2 as raw material, prepares nano silicon carbide powder with high purity and low oxygen content at the pyrolysis temperature of 1100-1400 ℃, and the synthesized beta-SiC has the average grain diameter of 40-70 nm under different pyrolysis conditions. Li et al (Li, zhang Changrui, hu Haifeng, ji Gong, gold. Low temperature chemical vapor deposition method for preparing SiC nano powder [ J ]. Functional materials and device school newspaper, 2006, (05): 447-450) adopts a CVD method, a reaction device adopts a quartz tube furnace, self-made liquid silicon carbide is used as a precursor, and high-purity SiC powder with granularity of 50-70 nm is prepared at lower temperatures of 850 ℃ and 900 ℃ respectively. Ezaki et al (EZAKI S,SAITOM,ISHINO K.CVD SiC powder for high-purity SiC source material[J].Materials ScienceForum,2002,389/390/391/392/393:155-158) introduced high purity (CH 3) 2SiCl2 and H2 on the surface of a flaky graphite substrate by CVD method, synthesized SiC film at 1-350 ℃, finally oxidized the graphite substrate deposited with SiC film at 1000-1100 ℃ and etched by HF to obtain high purity SiC powder. The particle size of the SiC powder is 200-1 mu m. Von Muench et al （Von Muench, W. (1978). Preparation of Pure and Doped Silicon Carbide by Pyrolysis of Silane Compounds. Journal of The Electrochemical Society,125(2), 294. doi:10.1149/1.2131431） deposited high purity silicon carbide at 1200-1800℃ by CVD method in a quartz bell jar reactor with graphite rod as heat carrier, introducing silicon-containing carbon-containing methylchlorosilane gas and hydrogen gas. The CVD apparatus had a1 pair bar structure, a diameter of 150mm and a height of 400mm.
The above studies all use CVD methods to synthesize highly pure SiC powder using an organic gas source, but the above methods suffer from at least one of the following disadvantages:
(1) The CVD process for preparing silicon carbide uses tubular furnace as main material and quartz bell-jar reactor, and features small size, low output and high productivity.
(2) The silicon carbide material prepared by the CVD method is mainly in a powder form, has the defects of small powder particle size and difficult collection, thereby causing material waste and high energy and material consumption, and cannot meet the large-scale industrial requirements.
(3) The device adopted by the current CVD method can only be used under normal pressure or negative pressure, and cannot be used for reactive deposition under the condition exceeding the normal pressure, so that the vapor deposition efficiency is low, and the yield cannot be improved.
(4) In either a tube furnace or a quartz bell jar reaction furnace, quartz glass is generally adopted as an outer wall, and is limited by the self characteristics of quartz materials, so that the reliability is insufficient, and the method is difficult to be suitable for long-time high-temperature working conditions required by gas phase reaction.
(5) The existing silicon carbide CVD reaction device has low cyclic utilization rate of materials, takes a tube furnace as an example, the materials enter from one end and flow out from the other end, so that the materials have no cyclic reaction path, the conversion rate is low, the volume of the 1 pair bar bell-type reaction furnace is small, the reaction area is limited, and the reaction conversion of the materials cannot be fully realized.
(6) The existing deposition reaction device has low energy utilization and recovery rate, and no matter a tube furnace or a 1 pair rod quartz bell jar reaction furnace can not recover heat and comprehensively utilize the heat, so that once the deposition reaction device is put into mass production, the energy consumption cost is high, and the economical efficiency is poor.
Disclosure of utility model
In order to solve the defects in the prior art, the utility model provides the rod-shaped silicon carbide deposition device, which can be used for preparing the rod-shaped silicon carbide material, overcomes the defect that the silicon carbide material prepared by the traditional CVD method is in a powder form, has the advantages of large material volume and high density, is easy to collect and process, and can recover heat for comprehensive utilization.
In order to achieve the above purpose, the utility model adopts the following specific scheme:
The rod-shaped silicon carbide deposition device comprises a furnace barrel and a chassis, wherein the furnace barrel and the chassis are enclosed to form a furnace chamber for depositing silicon carbide, an air inlet pipe for a deposition air source to enter the furnace chamber, an air outlet pipe for discharging deposition reaction tail gas and a deposition assembly for providing a CVD deposition reaction area are arranged on the chassis in a penetrating manner, and one end of the air inlet pipe extending to the furnace chamber is connected with a nozzle; the furnace cylinder is of a double-layer side wall structure, an inlet I is arranged at the lower part of the outer wall of the furnace cylinder, an outlet I is arranged at the upper part of the outer wall of the furnace cylinder, a spiral partition plate is arranged on the outer surface of the inner wall of the furnace cylinder, and cooling medium entering the cavity of the side wall of the furnace cylinder from the inlet I can flow upwards in a spiral manner and flow out through the outlet I; the inside of the chassis is hollow, an inlet II and an outlet II are arranged on the chassis, and a cooling medium entering from the inlet II can flow in a hollow area of the chassis and flow out from the outlet II;
And the outlet I and the outlet II are connected with an energy recovery system.
Further, the deposition assembly comprises two electrodes which penetrate through the chassis in a sealing way, one end of each electrode exposed out of the chassis is connected with the power supply system, one end extending into the furnace chamber is connected with the connecting piece, and the two connecting pieces are connected through the carrier body; the carriers are CVD deposition reaction areas, the carriers are of gate-type, U-type or pi-type structures, the height of each carrier is 100-2800mm, and the span is 100-400mm.
Further, the deposition assembly is provided in plurality, and a plurality of electrodes are arranged at uniform intervals along the circumference of the chassis.
Further, the height of the furnace chamber is 800mm-4000mm, and the vertical height between the top of the furnace chamber and the top of the carrier is not less than 600mm;
the distance between the inner wall of the furnace cylinder and the electrode nearest to the inner wall of the furnace cylinder is not less than 200mm.
Further, the carrier is made of tungsten, tantalum, molybdenum or high-purity graphite;
And/or;
the inner wall of the furnace cylinder is made of stainless steel or a composite material of stainless steel and silver.
Further, the number of the air inlet pipes is one, and the air inlet pipes are arranged in the center of the chassis.
Further, the number of the air inlet pipes is multiple, one of the air inlet pipes is arranged in the center of the chassis, and the rest air inlet pipes are arranged at uniform intervals along the circumferential direction of the chassis.
Further, the number of the air outlet pipes is multiple, and the air outlet pipes are uniformly arranged at intervals along the circumferential direction of the chassis.
Further, the furnace cylinder comprises a furnace cylinder body in a bell jar shape and a flange I arranged at an opening of the furnace cylinder body; the chassis comprises a flange II and two bottom plates which are arranged in an up-down arrangement mode in an inner ring of the flange II, the inlet II and the outlet II are both arranged on the lower bottom plate, and the furnace barrel and the chassis can be connected through sealing connection of the flange I and the flange II.
Further, the cooling medium is water or heat conducting oil.
The beneficial effects are that:
1) The utility model can prepare the rod-shaped silicon carbide material with ultra-high purity, overcomes the defect that the silicon carbide material prepared by CVD is in the form of powder, and has the advantages of large material volume, high density and easy collection and treatment of products.
2) The structure of the deposition device adopts stainless steel materials, and avoids the defects of unreliable type, temperature intolerance and pressure withstanding caused by adopting components such as quartz glass and the like. The product can be completely sealed in the preparation process, is not easy to pollute in the preparation process, and can resist temperature and pressure for a long time and continuously run for a long period.
3) The deposition device used in the utility model has the advantages of multiple carrier rods, continuously increased reaction area and deposition efficiency along with the length of the rod body, high deposition efficiency and high single furnace yield.
4) The deposition device used in the utility model has the advantages of large internal reaction chamber, stable circulation of the material after the material is incident through the nozzle, full material reaction and high reaction conversion rate.
Drawings
FIG. 1 is a cross-sectional view of a deposition apparatus according to the present utility model.
Fig. 2 is a top view of the chassis of the deposition apparatus of the present utility model.
The graphic indicia: 1. the furnace comprises a furnace cylinder body, 101, spiral partition plates, 102, inlets I,103, outlets I,2, flanges I,3, flanges II,4, electrodes, 5, air inlet pipes, 6, nozzles, 7, air outlet pipes, 8, a lower bottom plate, 801, inlets II,802, outlets II,9, an upper bottom plate, 10, connecting pieces, 11 and a carrier.
Detailed Description
The technical solutions of the present utility model will be clearly and completely described below in connection with specific embodiments, and it is obvious that the described embodiments are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to fall within the scope of the utility model.
In the following detailed description of the present utility model, terms such as "upper", "lower" and the like are used to indicate directions and orientations based on the orientations of the deposition apparatus shown in the drawings for convenience of description, and the orientations of the deposition apparatus shown in the drawings are their usual orientations in use, but it is not excluded that the deposition apparatus may take other orientations, for example, during transportation or the like.
Fig. 1 shows a cross-sectional view of the deposition apparatus of the present utility model to clearly show the internal structure of the deposition apparatus. The deposition device comprises a furnace barrel and a chassis, wherein the furnace barrel and the chassis are enclosed to form a furnace chamber for depositing silicon carbide, and the height of the furnace chamber is 800-4000 mm. The chassis is provided with an air inlet pipe 5 for a deposition air source to enter the furnace chamber, an air outlet pipe 7 for reaction tail gas to be discharged and a deposition component for providing a CVD deposition reaction area in a penetrating mode, and one end, extending to the furnace chamber, of the air inlet pipe 5 is connected with a nozzle 6. Referring to fig. 1, the furnace chamber is integrally formed with a cylindrical structure with a convex top. The furnace cylinder is of a double-layer side wall structure, an inlet I102 is arranged at the lower part of the outer wall of the furnace cylinder, an outlet I103 is arranged at the upper part of the outer wall of the furnace cylinder, cooling medium flowing out from the inlet I102 into the outlet I103 can flow in a side wall cavity of the furnace cylinder, and a spiral partition plate 101 is arranged on the outer surface of the inner wall of the furnace cylinder, so that the cooling medium flows upwards in a spiral mode in the side wall cavity. The inside of the chassis is hollow, an inlet II 801 and an outlet II 802 are arranged on the chassis, and cooling medium flowing out from the inlet I801 to the outlet I802 can flow in the hollow area of the chassis. The cooling medium discharged from the outlet I102 or the outlet II 802 has a large amount of heat, and the heat can be recycled by connecting the outlet I and the outlet II with an energy recycling system, and the specific structure of the energy recycling system belongs to the prior art, and the utility model is not repeated.
At least one, and typically a plurality of deposition assemblies, one such deposition assembly being shown in the cross-section of fig. 1, are disposed in the chamber of the deposition apparatus. Preferably, a plurality of deposition assemblies are included within the deposition apparatus and are substantially uniformly arranged along a circumferential spacing of the deposition apparatus.
At least one, and usually a plurality of air inlet pipes 5 are arranged in the furnace chamber of the deposition device, and when the number of the air inlet pipes 5 is one, the air inlet pipes 5 are arranged in the center of the chassis; when the number of the air intake pipes 5 is plural, one of them may be provided at the center of the chassis, and the remaining air intake pipes 5 may be arranged at uniform intervals in the circumferential direction of the chassis; of course, all the intake pipes 5 may be arranged at uniform intervals in the circumferential direction of the chassis without being disposed at the center.
At least one, and usually a plurality of air outlet pipes 7 are arranged in the furnace chamber of the deposition device, and when the number of the air outlet pipes 7 is one, the arrangement positions of the air outlet pipes are not limited; when the number of the air outlet pipes 7 is plural, the plural air outlet pipes are preferably arranged at uniform intervals in the circumferential direction of the chassis.
The furnace cylinder comprises a bell-type furnace cylinder body 1 and a flange I2 arranged at an opening of the furnace cylinder body 1.
The chassis comprises a flange II 3 and two bottom plates 8 and 9 which are arranged in an upper-lower arrangement mode in an inner ring of the flange II 3, the connection between the furnace cylinder and the chassis can be achieved through the sealing connection between the flange I2 and the flange II 3, and in detail, a sealing piece is arranged at the joint of the flange I2 and the flange II 3, so that the deposition air source can be prevented from leaking outwards from the furnace chamber.
In detail, the cooling medium is water or heat conducting oil.
All the components on the chassis are made of stainless steel. The outer wall of the furnace cylinder is made of carbon steel or stainless steel, and the inner wall of the furnace cylinder is made of stainless steel, and can be polished or compounded with a silver layer, so that the reflectivity of the inner wall of the furnace cylinder is improved, and the heat dissipation in the furnace chamber is reduced. The defects of unreliable type, temperature and pressure intolerance caused by adopting components such as quartz glass in the prior art are avoided. The product can be completely sealed in the preparation process, is not easy to pollute in the preparation process, and can resist temperature and pressure for a long time and continuously run for a long period.
After the deposition gas source enters the furnace chamber through the gas inlet pipe 5, rod-shaped silicon carbide grows on the deposition assembly through vapor deposition reaction, and the tail gas after the reaction is discharged from the gas outlet pipe 7.
The specific structure of each component of the deposition apparatus will be described below, respectively.
Furnace tube
The furnace cylinder comprises a bell-type furnace cylinder body 1 and a flange I2 arranged at an opening of the furnace cylinder body 1; the furnace cylinder body 1 is of a double-layer side wall structure, an inlet I102 is arranged at the lower part of the outer wall of the furnace cylinder body 1, an outlet I103 is arranged at the upper part of the outer wall of the furnace cylinder body 1, cooling medium flowing out from the inlet I102 into the outlet I103 can flow in a side wall cavity of the furnace cylinder body 1, and a spiral partition plate 101 for the cooling medium to flow upwards in a spiral mode is arranged on the outer surface of the inner wall of the furnace cylinder body 1, so that the cooling medium flows upwards in a spiral mode in the side wall cavity.
The furnace tube body 1 is provided with a plurality of peeping holes, which is convenient for personnel to observe the deposition reaction condition in the furnace.
When the deposition reaction is carried out, the internal pressure of the furnace chamber can be maintained at 0.001MPa-0.5MPa (absolute pressure), namely, the deposition reaction can be carried out under normal pressure, so that the deposition efficiency can be improved.
Deposition Assembly ]
Each deposition assembly comprises two electrodes 4, two connectors 10 and a carrier 11. The electrode 4 penetrates through the chassis and extends into the furnace chamber, and one end of the electrode 4 exposed to the outside is connected with the power supply system, so that the deposition assembly can be electrified to heat the deposition assembly; one end extending into the furnace chamber is connected with the connecting piece 10, the two connecting pieces 10 are connected through a carrier 11, the carrier 11 is a CVD deposition reaction area, and can be made of high-temperature resistant and high-strength metals or alloys, such as tungsten, tantalum, molybdenum and other metals or alloy materials formed by the elements, and also can be isostatic graphite.
The height of each carrier 11 is 100-2800mm and the span is 100-400mm.
The vertical height between the top of the oven cavity and the top of the carrier 11 is not less than 600mm, and the distance between the inner wall of the oven and the nearest electrode 4 is not less than 200mm, thereby ensuring that the carrier 11 does not burn the inner wall of the oven at a high temperature of 1600 ℃.
Each carrier 11 is of a U-shaped, gate-shaped or pi-shaped structure, wherein the three structures differ in that: the middle part of the U-shaped structure is vertically connected with the two vertical parts, the middle part of the door-shaped structure is in an outwards convex arc shape, one end of the two vertical parts of the pi-shaped structure, which is far away from the middle part, is provided with outwards extending supporting feet, and the carrier 11 is connected with the connecting piece 10 through the supporting feet.
The number of the carriers 11 is 1-36 pairs, the carriers are arranged according to the single-furnace yield requirement, and the inner diameter of the furnace cylinder is enough to meet the requirement that the distance between the center of the outermost carrier 11 and the inner wall of the furnace cylinder is more than 200 mm. When the number of carriers 11 is small, it may be arranged substantially uniformly on the chassis at circumferential intervals; when the number is large, a plurality of circles may be arranged in a concentric circle form, and a space is left between two adjacent circles of the connectors 10 to provide an air inlet pipe. As shown in fig. 2, when the number of the carriers 11 is 12 pairs, the carriers may be arranged in a manner of 2 circles of electrodes, wherein the first circle is provided with 4 pairs and the second circle is provided with 8 pairs from inside to outside; when the number of carriers 11 is 36 pairs, 3 turns of electrodes may be provided, the first turn being provided with 4 pairs, the second turn being provided with 8 pairs, and the third turn being provided with 24 pairs. Of course, these are just a few examples, and the specific number of settings, turns, and number of carriers in each turn may be designed according to specific needs.
In order to ensure the deposition of rod-shaped silicon carbide, the material of the carrier 11 is preferably tungsten, tantalum, molybdenum or high-purity graphite; the material of the connector 10 is preferably graphite.
The carrier 11 may be maintained at a temperature in the range of 1200-1600 c under electrical heating, in which the silicon carbide deposition reaction is effected.
Chassis
The chassis comprises a flange II 3 and two bottom plates which are arranged in an upper-lower mode in an inner ring of the flange II 3, and an inlet II 801 for cooling medium to enter and an outlet II 802 for cooling medium to be discharged are arranged on the lower bottom plate 8.
The chassis is also provided with an air inlet pipe 5 for a deposition air source to enter and an air outlet pipe 7 for the reaction tail gas to be discharged, and the air inlet pipe 5 and the air outlet pipe 7 are all arranged through the chassis. One end of the air inlet pipe 5 is connected with the deposition air source tank, the other end of the air inlet pipe extends into the furnace chamber and is connected with a nozzle 6, and the caliber of the nozzle 6 can be set according to actual needs. The deposition gas source enters from the gas inlet pipe 5, flows out from the nozzle 6 at a high speed and flows circularly in the furnace chamber, and after reacting on the high-temperature carrier surface, the deposition gas source carries the reactant to leave the carrier surface and finally is discharged from the gas outlet pipe 7.
The chassis is provided with an electrode hole for installing the electrode 4, and a sealing piece is arranged in the electrode hole so as to prevent a deposition gas source from leaking from the electrode hole.
Wherein, the number of the air inlet pipes 5 is 1-24, and when the number of the air inlet pipes 5 is one, the air inlet pipes can be arranged at the center of the chassis; when the number is large, a plurality of turns may be arranged in concentric circles on the basis of being arranged substantially uniformly at circumferential intervals on the chassis, preferably between two adjacent turns of the electrodes 4, and the number of the intake pipes 5 provided for each turn is not limited.
The number of the air outlet pipes 7 is 1-12, and the air outlet pipes 7 are mainly arranged on one side of the innermost ring electrode 4 close to the center of the chassis or one side of the outermost ring electrode 4 close to the edge of the chassis. When the number is large, a plurality of circles may be arranged in concentric circles on the basis of being arranged substantially uniformly at circumferential intervals on the chassis.
As a specific embodiment of the present utility model, fig. 2 shows a top view of a chassis of the deposition apparatus, on which two rings of electrodes 4 are arranged circumferentially, the electrodes 4 are preferably arranged substantially uniformly at circumferential intervals, the two rings of electrodes are arranged in concentric circles, a nozzle 6 (air inlet pipe 5) is provided at the center of the chassis and between the two rings of electrodes 4, wherein one nozzle 6 is provided at the center of the chassis, and one ring of nozzles 6 is provided between the two rings of electrodes 4; a circle of exhaust pipe 7 is arranged on one side of the innermost ring electrode 4 near the center of the chassis.
The rod-shaped silicon carbide deposition device provided by the utility model can be reliably used for the CVD reaction working condition of silicon carbide, rod-shaped silicon carbide can be produced, deposited silicon carbide is a compact rod body, the product collection is convenient, the pollution is less, the yield is high, and the prepared rod-shaped silicon carbide can be crushed by adopting a crushing device and then used as a raw material. The deposition device consists of a stainless steel furnace cylinder, a stainless steel chassis, an air inlet pipe 5, an air outlet pipe 7 and other parts, has the characteristics of corrosion resistance, high pressure resistance, high temperature resistance, long-term operation, high production safety and high reliability, can meet the reaction working condition after pressurization, and improves the deposition efficiency. The furnace cylinder adopts a bell-type structure with double-layer side walls, the inner wall is made of stainless steel, the outer wall is made of carbon steel or stainless steel, a cooling medium is arranged in a cavity of the side wall, and the cooling medium is used for cooling the inner wall of the furnace cylinder and carrying out heat energy recovery and comprehensive utilization after carrying out heat, so that the energy utilization rate is improved, and the energy consumption level is reduced. The chassis is provided with a plurality of air inlet pipes 5, air outlet pipes 7 and a deposition assembly, and the deposition assembly comprises an electrode 4, a connecting piece 10 and a carrier 11. The number of the carriers 11 is 1-36 groups (pairs), the carriers can be set according to the needs, when the number of the carriers 11 is 36 pairs, the single-furnace yield can reach more than 200Kg, the requirements of large-scale production and application can be met, and the method has the advantage of high single-furnace yield.
The above description is only of the preferred embodiment of the present utility model, and is not intended to limit the present utility model in any way. All equivalent changes or modifications made according to the essence of the present utility model should be included in the scope of the present utility model.
Claims (9)
1. The rod-shaped silicon carbide deposition device comprises a furnace barrel and a chassis, wherein the furnace barrel and the chassis are enclosed to form a furnace chamber for depositing silicon carbide, an air inlet pipe for a deposition air source to enter the furnace chamber, an air outlet pipe for discharging deposition reaction tail gas and a deposition assembly for providing a CVD deposition reaction area are arranged on the chassis in a penetrating manner, and one end of the air inlet pipe extending to the furnace chamber is connected with a nozzle; the method is characterized in that: the furnace cylinder is of a double-layer side wall structure, an inlet I is arranged at the lower part of the outer wall of the furnace cylinder, an outlet I is arranged at the upper part of the outer wall of the furnace cylinder, a spiral partition plate is arranged on the outer surface of the inner wall of the furnace cylinder, and cooling medium entering the cavity of the side wall of the furnace cylinder from the inlet I can flow upwards in a spiral manner and flow out through the outlet I;
the inside of the chassis is hollow, an inlet II and an outlet II are arranged on the chassis, and a cooling medium entering from the inlet II can flow in a hollow area of the chassis and flow out from the outlet II;
And the outlet I and the outlet II are connected with an energy recovery system.
2. The rod-shaped silicon carbide deposition device according to claim 1, wherein the deposition assembly comprises two electrodes which penetrate through the chassis in a sealing manner, one end of each electrode exposed to the outside is connected with a power supply system, one end extending into the furnace chamber is connected with a connecting piece, and the two connecting pieces are connected through a carrier body; the carriers are CVD deposition reaction areas, the carriers are of gate-type, U-type or pi-type structures, the height of each carrier is 100-2800mm, and the span is 100-400mm.
3. A rod-shaped silicon carbide deposition apparatus according to claim 2 wherein the deposition assembly is a plurality of electrodes arranged at uniform intervals along the circumference of the chassis.
4. A rod-shaped silicon carbide deposition apparatus according to claim 3, wherein the height of the furnace chamber is 800mm to 4000mm, and the vertical height between the top of the furnace chamber and the top of the carrier is not less than 600mm;
the distance between the inner wall of the furnace cylinder and the electrode nearest to the inner wall of the furnace cylinder is not less than 200mm.
5. The rod-shaped silicon carbide deposition device as claimed in claim 1, wherein the number of the air inlet pipes is one, and the air inlet pipes are arranged at the center of the chassis.
6. A rod-shaped silicon carbide deposition device according to claim 1, wherein the number of the air inlet pipes is plural, one of the air inlet pipes is provided at the center of the chassis, and the remaining air inlet pipes are arranged at uniform intervals along the circumferential direction of the chassis.
7. The apparatus according to claim 1, wherein the number of the air outlet pipes is plural, and the air outlet pipes are arranged at uniform intervals in the circumferential direction of the chassis.
8. The rod-shaped silicon carbide deposition device as claimed in claim 1, wherein the furnace comprises a bell-type furnace body and a flange I arranged at an opening of the furnace body; the chassis comprises a flange II and two bottom plates which are arranged in an up-down arrangement mode in an inner ring of the flange II, the inlet II and the outlet II are both arranged on the lower bottom plate, and the furnace barrel and the chassis can be connected through sealing connection of the flange I and the flange II.
9. A rod-shaped silicon carbide deposition device according to claim 1 wherein the cooling medium is water or thermal oil.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202323097407.4U CN221254691U (en) | 2023-11-16 | 2023-11-16 | Rod-shaped silicon carbide deposition device |
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| CN202323097407.4U CN221254691U (en) | 2023-11-16 | 2023-11-16 | Rod-shaped silicon carbide deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119082862A (en) * | 2024-11-07 | 2024-12-06 | 洛阳中硅高科技有限公司 | Polycrystalline silicon carbide rod, preparation device and method thereof, and polycrystalline silicon carbide powder |
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2023
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119082862A (en) * | 2024-11-07 | 2024-12-06 | 洛阳中硅高科技有限公司 | Polycrystalline silicon carbide rod, preparation device and method thereof, and polycrystalline silicon carbide powder |
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