CN220914266U - Multi-chip integrated LED light source module - Google Patents
Multi-chip integrated LED light source module Download PDFInfo
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- CN220914266U CN220914266U CN202322576018.3U CN202322576018U CN220914266U CN 220914266 U CN220914266 U CN 220914266U CN 202322576018 U CN202322576018 U CN 202322576018U CN 220914266 U CN220914266 U CN 220914266U
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- Prior art keywords
- bonding pad
- electrode
- pad
- packaging layer
- led light
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 53
- 235000012431 wafers Nutrition 0.000 claims description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Led Device Packages (AREA)
Abstract
A multi-chip integrated LED light source module comprises a bonding pad layer, a circuit packaging layer and a chip packaging layer. The pad layer includes a common pad, an R-pole pad, a B-pole pad, and a G-pole pad. The circuit packaging layer internally comprises an electrode connecting sheet and a connecting column. The inside of the chip packaging layer comprises an R wafer, a B wafer and a G wafer. Compared with the prior art, the connecting post is arranged to connect the electrode connecting sheet and the bonding pad layer, so that complicated lead arrangement is not needed, a circuit is effectively simplified, and the reliability of connection is improved. Through setting up two sets of R wafer, B wafer, G wafer share a set of R utmost point pad, B utmost point pad, G utmost point pad, can effectively reduce the connection circuit of wafer and pad, save space, multiunit wafer is connected simultaneously on the public pad, can effectively promote the utilization ratio of public electrode, further reduce the volume of LED light source module.
Description
Technical Field
The utility model relates to the technical field of chip packaging, in particular to a multi-chip integrated LED light source module.
Background
LED light sources have been increasingly used in many fields, such as household lighting, advertising indication, high definition display screens, etc., as the basis for new generation lighting. The current packaging form of the LED light source mostly fixes the LED chip on a bracket or a PCB printed circuit board, and then adopts a wire bonding manner to realize electrical interconnection.
The current packaging method of the LED light source integrated with the control chip comprises the following steps: and carrying out plane packaging on the control chip and the LED light source, namely sequentially attaching the LED light source and the control chip in the same lamp cup, and then carrying out circuit interconnection in a wire welding mode to realize the LED light source with a specific function. Although the packaging method realizes the miniaturization of a single LED light source, when a plurality of LED light sources are required to be arranged, the problems of complex wiring, large occupied space, poor utilization of a common electrode connecting end and the like still exist.
Disclosure of utility model
In view of the above, the present utility model provides a multi-chip integrated LED light source module that can solve the above-mentioned problems.
A multi-chip integrated LED light source module includes a bonding pad layer, a circuit packaging layer laminated on the bonding pad layer, and a chip packaging layer laminated on the circuit packaging layer. The pad layer comprises a pair of common pads axially symmetrically arranged on the circuit packaging layer, a pair of R-pole pads arranged on two sides of one common pad, a pair of B-pole pads arranged on two sides of the other common pad, and a pair of G-pole pads respectively arranged between the R-pole pads and the B-pole pads. The four bonding pads are all arranged on the surface of the circuit packaging layer, which is far away from the chip packaging layer, and are arranged at the edge of the rectangular surface of the circuit packaging layer in a shape of a nine-square grid. And the common bonding pad is axisymmetric by taking the central point of the circuit packaging layer as a symmetry axis. And the R electrode pad, the B electrode pad and the G electrode pad are arranged in an axisymmetric way by taking the straight line where the two common pads are positioned as a symmetry axis. The circuit packaging layer internally comprises a plurality of electrode connecting sheets which are respectively connected with the bonding pad layer, and a plurality of connecting columns which are arranged between the electrode connecting sheets and the bonding pad layer. The electrode connecting pieces are arranged at intervals. The connecting columns are of a plurality of columnar structures arranged in the circuit packaging layer and are respectively connected to the public bonding pad, the R electrode bonding pad, the B electrode bonding pad and the G electrode bonding pad. The inside of the chip packaging layer comprises four R wafers arranged on four corners of the rectangular surface of the circuit packaging layer, four B wafers which are respectively adjacent to the R wafers and are arranged at intervals, and four G wafers which are arranged between the R wafers and the B wafers.
Further, the common bonding pad, the R electrode bonding pad, the B electrode bonding pad and the G electrode bonding pad are all made of copper or aluminum.
Further, the common pad, the R-electrode pad, the B-electrode pad and the G-electrode pad are all fixed on the circuit packaging layer through reflow soldering or etching technology.
Further, the connecting column is made of copper.
Further, the electrode connection sheet is made of copper or aluminum.
Further, the electrode connecting sheet is of a sheet-shaped conductive structure.
Further, the circuit packaging layer is of a structure of insulating plastic packaging by adopting silica gel.
Further, the R wafer, the B wafer and the G wafer are all flip-chip mounted on the circuit packaging layer and fixed by adopting a solder paste welding mode.
Compared with the prior art, the multi-chip integrated LED light source module provided by the utility model has the advantages that the electrode connecting sheet and the bonding pad layer are connected through the connecting column, complex wire arrangement is not needed, the circuit is effectively simplified, and meanwhile, the connection reliability is improved. Through setting up two sets of R wafer, B wafer, G wafer share a set of R utmost point pad, B utmost point pad, G utmost point pad, can effectively reduce the connection circuit of wafer and pad, save space, multiunit wafer is connected simultaneously on the public pad, can effectively promote the utilization ratio of public electrode, further reduce the volume of LED light source module.
Drawings
Fig. 1 is a schematic flow chart of a multi-chip integrated LED light source module according to the present utility model.
Fig. 2 is an exploded structure schematic view of the multi-chip integrated LED light source module of fig. 1.
Fig. 3 is a bottom view of the multi-chip integrated LED light source module of fig. 1.
Fig. 4 is a top view of the multi-chip integrated LED light source module of fig. 1.
Fig. 5 is a side view of the multi-chip integrated LED light source module of fig. 1.
Detailed Description
Specific embodiments of the present utility model are described in further detail below. It should be understood that the description herein of the embodiments of the utility model is not intended to limit the scope of the utility model.
Fig. 1 to 5 are schematic structural diagrams of a multi-chip integrated LED light source module according to the present utility model. The multi-chip integrated LED light source module includes a pad layer 10, a wire encapsulation layer 20 laminated on the pad layer 10, and a chip encapsulation layer 30 laminated on the wire encapsulation layer 20. It is conceivable that the multi-chip integrated LED light source module further includes other functional modules such as a wafer of control chips, etc., which are known to those skilled in the art, and will not be described herein.
The pad layer 10 includes a pair of common pads 11 axisymmetrically disposed on the wiring package layer 20, a pair of R-pole pads 12 disposed on both sides of one of the common pads 11, a pair of B-pole pads 13 disposed on both sides of the other common pad 11, and a pair of G-pole pads 14 disposed between the R-pole pads 12 and the B-pole pads 13, respectively. The four pads are all disposed on the surface of the circuit packaging layer 20 far from the chip packaging layer 30, and are arranged at the edge of the rectangular surface of the circuit packaging layer 20 in a shape of a nine-square lattice, and are made of copper or aluminum, and are fixed on the circuit packaging layer 20 through reflow soldering or etching processes, so as to serve as four different electrodes respectively, and particularly, the actual production needs are determined. The common pad 11 is axisymmetric with respect to the center point of the circuit packaging layer 20 as a symmetry axis, so as to serve as a common electrode. The R-electrode pad 12, the B-electrode pad 13, and the G-electrode pad 14 are all axisymmetrically arranged with the straight line where the two common pads 11 are located as a symmetry axis, so as to be respectively connected to the electrodes of the corresponding elements of the chip package layer 30.
The circuit packaging layer 20 is made of an insulating material, such as silica gel, and has an insulating plastic package structure, and includes a plurality of electrode connection pads 21 respectively connected to the pad layer 10, and a plurality of connection posts 22 disposed between the electrode connection pads 21 and the pad layer 10.
The electrode connecting pieces 21 are sheet-shaped conductive structures made of metal, and may be made of conductive metal such as copper, aluminum, etc., and a plurality of the electrode connecting pieces 21 are arranged at intervals to be connected with each electrode of the chip packaging layer 30 respectively, and have minimal space while not interfering with each other when different electrodes are connected, so as to facilitate forming the smaller circuit packaging layer 20.
The connection posts 22 are a plurality of columnar structures disposed in the circuit packaging layer 20, are made of metal conductive materials such as copper or aluminum, preferably copper, and are respectively connected to the common pad 11, the R-electrode pad 12, the B-electrode pad 13, and the G-electrode pad 14, so as to serve as conductive posts to connect the respective pads and the electrode connection piece 21.
The chip packaging layer 30 is a structure that is molded by transparent insulating material, and includes four R-wafers 31 disposed at four corners of the rectangular surface of the circuit packaging layer 20, four B-wafers 32 disposed adjacent to and spaced from the R-wafers 31, and four G-wafers 33 disposed between the R-wafers 31 and the B-wafers 32.
The R wafer 31, the B wafer 32 and the G wafer 33 are all LED light emitting chips, are main raw materials of LEDs, and the LEDs mainly emit light by means of the wafers. The core structure of the LED is composed of a Sichuan IV compound P-type semiconductor and an N-type semiconductor, and PN junctions, which are also called active regions, are formed at the interfaces of the P-type semiconductor and the N-type semiconductor. The PN junction has the I-V characteristic of normal PN junction forward conduction and reverse cutoff, and has the luminous characteristic under certain conditions. And applying a forward voltage to the PN junction to enable holes and electrons in the P region and the N region to mutually diffuse into each other region, and during the diffusion process, a part of minority carriers entering the opposite region are continuously recombined with majority carriers, so that energy can be released in the form of photons.
The R wafer 31, the B wafer 32, and the G wafer 33 are flip-chip mounted on the circuit packaging layer 20, so that the P area and the N area are connected to different electrodes in an abutting manner, and are fixed by solder paste, so that the circuit connection of the R wafer 31, the B wafer 32, and the G wafer 33 is realized. It is conceivable that, in order to correspond to the electrode connection pieces 21 connected to the common pad 11, the R-electrode pad 12, the B-electrode pad 13, and the G-electrode pad 14, two sets of wafers on both sides of the common pad 11 are respectively disposed in correspondence, that is, axisymmetric with respect to a straight line where the two G-electrode pads 14 are located, so that two opposite identical wafers are commonly connected to the same pad.
Compared with the prior art, the multi-chip integrated LED light source module provided by the utility model has the advantages that the electrode connecting sheet 21 and the bonding pad layer 10 are connected by the connecting column 22, complicated wire arrangement is not needed, the circuit is effectively simplified, and meanwhile, the connection reliability is improved. Through setting up two sets of R wafer 31, B wafer 32, G wafer 33 share a set of R utmost point pad 12, B utmost point pad 13, G utmost point pad 14, can effectively reduce the wafer and the connecting wire of pad, save space, multiunit wafer is connected simultaneously on the public pad 11, can effectively promote the utilization ratio of public electrode, further reduce the volume of LED light source module.
The above is only a preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model, and any modifications, equivalent substitutions or improvements within the spirit of the present utility model are intended to be covered by the claims of the present utility model.
Claims (8)
1. The utility model provides a multicore piece integration LED light source module which characterized in that: the multi-chip integrated LED light source module comprises a bonding pad layer, a circuit packaging layer which is laminated on the bonding pad layer, and a chip packaging layer which is laminated on the circuit packaging layer, wherein the bonding pad layer comprises a pair of common bonding pads which are axisymmetrically arranged on the circuit packaging layer, a pair of R electrode bonding pads which are arranged on two sides of one common bonding pad, a pair of B electrode bonding pads which are arranged on two sides of the other common bonding pad, and a pair of G electrode bonding pads which are respectively arranged between the R electrode bonding pads and the B electrode bonding pads, the four bonding pads are all arranged on the surface of the circuit packaging layer which is far away from the chip packaging layer and are in a nine-grid shape, the common bonding pads are axisymmetrically arranged on the edge of the rectangular surface of the circuit packaging layer by taking the central point of the circuit packaging layer as a symmetry axis, the R electrode bonding pad, the B electrode bonding pad and the G electrode bonding pad are all arranged in an axisymmetric mode by taking the straight line where the two common bonding pads are located as a symmetry axis, the inside of the circuit packaging layer comprises a plurality of electrode connecting sheets which are respectively connected with the bonding pad layer, a plurality of connecting columns which are arranged between the electrode connecting sheets and the bonding pad layer, the electrode connecting sheets are arranged at intervals, the connecting columns are of columnar structures which are arranged in the circuit packaging layer and are respectively connected with the common bonding pad, the R electrode bonding pad, the B electrode bonding pad and the G electrode bonding pad, the inside of the chip packaging layer comprises four R wafers which are arranged on four corners of the rectangular surface of the circuit packaging layer, four B wafers which are respectively adjacent to the R wafers and are arranged at intervals, and four G wafers which are arranged between the R wafers and the B wafers.
2. The multi-chip integrated LED light source module of claim 1, wherein: the common bonding pad, the R electrode bonding pad, the B electrode bonding pad and the G electrode bonding pad are all made of copper or aluminum.
3. The multi-chip integrated LED light source module of claim 1, wherein: and the public bonding pad, the R electrode bonding pad, the B electrode bonding pad and the G electrode bonding pad are all fixed on the circuit packaging layer through reflow soldering or etching technology.
4. The multi-chip integrated LED light source module of claim 1, wherein: the connecting column is made of copper.
5. The multi-chip integrated LED light source module of claim 1, wherein: the electrode connecting sheet is made of copper or aluminum.
6. The multi-chip integrated LED light source module of claim 5, wherein: the electrode connecting sheet is of a sheet-shaped conductive structure.
7. The multi-chip integrated LED light source module of claim 1, wherein: the circuit packaging layer is of a structure of insulating plastic packaging by adopting silica gel.
8. The multi-chip integrated LED light source module of claim 1, wherein: and the R wafer, the B wafer and the G wafer are all flip-chip mounted on the circuit packaging layer and fixed by adopting a solder paste welding mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322576018.3U CN220914266U (en) | 2023-09-21 | 2023-09-21 | Multi-chip integrated LED light source module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322576018.3U CN220914266U (en) | 2023-09-21 | 2023-09-21 | Multi-chip integrated LED light source module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220914266U true CN220914266U (en) | 2024-05-07 |
Family
ID=90908499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322576018.3U Active CN220914266U (en) | 2023-09-21 | 2023-09-21 | Multi-chip integrated LED light source module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220914266U (en) |
-
2023
- 2023-09-21 CN CN202322576018.3U patent/CN220914266U/en active Active
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