CN220753430U - Integrated device, electronic circuit, circuit board and air conditioner - Google Patents
Integrated device, electronic circuit, circuit board and air conditioner Download PDFInfo
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- CN220753430U CN220753430U CN202322106031.2U CN202322106031U CN220753430U CN 220753430 U CN220753430 U CN 220753430U CN 202322106031 U CN202322106031 U CN 202322106031U CN 220753430 U CN220753430 U CN 220753430U
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
The application provides an integrated device, an electronic circuit, a circuit board and an air conditioner, which comprises a packaging shell, a first lead frame, a second lead frame, a first diode chip and an IGBT chip, wherein the packaging shell is provided with four pins; the first lead frame and the second lead frame are arranged inside the packaging shell; the first diode chip is arranged on the first lead frame, the cathode is electrically connected to the first pin through the first lead frame, and the anode is electrically connected with the second pin; the IGBT chip is arranged on the second lead frame, the collector is electrically connected to the second pin through the second lead frame, the emitter is electrically connected with the third pin, and the grid is electrically connected with the fourth pin. According to the method, the first diode chip and the IGBT chip are integrally packaged in the same packaging shell, the number of pins is reduced, the integration level is high, and the miniaturization of the device is realized; in addition, the cost can be reduced, the manufacturing efficiency can be improved, and the assembly efficiency can be improved by only once assembling when the assembly is carried out on the circuit board.
Description
Technical Field
The present disclosure relates to the field of electronic circuits, and more particularly, to an integrated device, an electronic circuit, a circuit board, and an air conditioner.
Background
In the related art, a Boost topology circuit is generally used in the existing air conditioner, and main devices of the Boost topology circuit include key devices such as PFC (Power Factor Correction ) inductor, switching tube IGBT (Insulated Gate Bipolar Transistor ) and freewheeling diode FRD (Fast Recovery Diode, recovery diode). However, the existing IGBT, FRD and other power semiconductor devices are all discrete devices, so that the integration level is poor, and the miniaturization of the devices is difficult to realize; in addition, since the IGBT and the FRD are two independent discrete devices, the cost is high and the manufacturing efficiency is low, and the two devices also need to be separately molded into pins during production and assembly, and also need to be assembled onto a circuit board twice, so that the assembly efficiency is low.
Disclosure of Invention
The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides an integrated device, an electronic circuit, a circuit board and an air conditioner, which aim to improve the integration level, realize the miniaturization of the device, reduce the cost and improve the manufacturing efficiency and the assembly efficiency.
In a first aspect, embodiments of the present application provide an integrated device, including:
the packaging shell is provided with a first pin, a second pin, a third pin and a fourth pin;
the first lead frame and the second lead frame are arranged inside the packaging shell;
the first diode chip is arranged on the first lead frame, the cathode of the first diode chip is electrically connected to the first pin through the first lead frame, and the anode of the first diode chip is electrically connected with the second pin;
and the IGBT chip is arranged on the second lead frame, the collector electrode of the IGBT chip is electrically connected to the second pin through the second lead frame, the emitter electrode is electrically connected with the third pin, and the grid electrode is electrically connected with the fourth pin.
According to some embodiments of the present application, the first lead frame and the second lead frame are separately disposed, the first lead frame and the first lead are integrally formed, and the second lead frame and the second lead are integrally formed.
According to some embodiments of the present application, the integrated device further comprises an insulating plate disposed inside the package case, and the first lead frame and the second lead frame are both fixed to one side of the insulating plate.
According to some embodiments of the application, the insulating plate is a ceramic plate.
According to some embodiments of the application, the integrated device further comprises a metal plate disposed inside the package case, the metal plate being disposed at the other side of the insulating plate.
According to some embodiments of the present application, the anode of the first diode chip is connected to the second pin through a first conductive lead, the emitter of the IGBT chip is connected to the third pin through a second conductive lead, and the gate of the IGBT chip is connected to the fourth pin through a third conductive lead.
According to some embodiments of the present application, the integrated device further comprises a second diode chip, the second diode chip is disposed on the second lead frame, an anode of the second diode chip is electrically connected to a collector of the IGBT chip through the second lead frame, and a cathode of the second diode chip is electrically connected to an emitter of the IGBT chip.
According to some embodiments of the present application, the cathode of the second diode chip is connected to the emitter of the IGBT chip by a fourth conductive lead.
In a second aspect, embodiments of the present application provide an electronic circuit including the integrated device of the first aspect.
According to some embodiments of the present application, the electronic circuit includes a Boost module including an inductor and the integrated device, one end of the inductor being connected to the second pin of the integrated device.
According to some embodiments of the present application, the electronic circuit further comprises a rectifying module connected to the input side of the Boost module and a power factor correction module connected to the output side of the Boost module.
In a third aspect, embodiments of the present application provide a circuit board including the electronic circuit of the second aspect.
In a fourth aspect, an embodiment of the present application provides an air conditioner, including the circuit board of the third aspect.
According to the technical scheme of the embodiment of the application, the technical effects include but are not limited to the following: the integrated device comprises a package shell, a first lead frame, a second lead frame, a first diode chip and an IGBT chip, wherein the package shell is provided with a first pin, a second pin, a third pin and a fourth pin; the first lead frame and the second lead frame are arranged inside the packaging shell; the first diode chip is arranged on the first lead frame, the cathode is electrically connected to the first pin through the first lead frame, and the anode is electrically connected with the second pin; the IGBT chip is arranged on the second lead frame, the collector is electrically connected to the second pin through the second lead frame, the emitter is electrically connected with the third pin, and the grid is electrically connected with the fourth pin. According to the embodiment of the application, the first diode chip and the IGBT chip are simultaneously integrated and packaged in the same packaging shell, and the second pin is used as a common pin and is simultaneously connected to the anode of the first diode chip and the collector of the IGBT chip, so that the number of pins is reduced, the integration level of the integrated device is high, and the miniaturization of the device is realized; in addition, the embodiment of the application can reduce the cost and improve the manufacturing efficiency, and the assembly efficiency is improved by only being assembled once when the circuit board is assembled.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The accompanying drawings are included to provide a further understanding of the technical aspects of the present application, and are incorporated in and constitute a part of this specification, illustrate the technical aspects of the present application and together with the examples of the present application, and not constitute a limitation of the technical aspects of the present application.
FIG. 1 is a schematic diagram of a front side structure of an integrated device provided in one embodiment of the present application;
FIG. 2 is a schematic diagram of an electronic circuit including a Boost module according to one embodiment of the present application.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it should be understood that references to orientation descriptions, such as directions of up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
In the description of the present application, the meaning of a number is one or more, the meaning of a number is two or more, greater than, less than, exceeding, etc. are understood to not include the present number, and the meaning of a number above, below, within, etc. are understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present application, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present application can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical solution.
In some cases, the existing air conditioner generally uses a Boost topology circuit, and main devices of the Boost topology circuit include key devices such as PFC (Power Factor Correction ) inductor, switching tube IGBT (Insulated Gate Bipolar Transistor ) and freewheeling diode FRD (Fast Recovery Diode, recovery diode). However, the existing IGBT, FRD and other power semiconductor devices are all discrete devices, so that the integration level is poor, and the miniaturization of the devices is difficult to realize; in addition, since the IGBT and the FRD are two independent discrete devices, the cost is high and the manufacturing efficiency is low, and the two devices also need to be separately molded into pins during production and assembly, and also need to be assembled onto a circuit board twice, so that the assembly efficiency is low.
Based on the above circumstances, embodiments of the present application provide an integrated device, an electronic circuit, a circuit board, and an air conditioner, which aim to improve the integration level, achieve miniaturization of the device, and reduce the cost, improve the manufacturing efficiency, and improve the assembly efficiency.
Various embodiments of the integrated device of the present application are further described below with reference to the accompanying drawings.
As shown in fig. 1, fig. 1 is a schematic front view of an integrated device according to an embodiment of the present application.
In an embodiment, the integrated device 1 of the embodiments of the present application includes, but is not limited to, a package case 700, a first lead frame 110, a second lead frame 120, a first diode chip 200, and an IGBT chip 300.
Specifically, the package case 700 is provided with four pins, which are the first pin 410, the second pin 420, the third pin 430, and the fourth pin 440, respectively; next, the package case 700 is provided inside with the first and second lead frames 110 and 120; in addition, the first diode chip 200 is mounted on the first lead frame 110, and the IGBT chip 300 is mounted on the second lead frame 120; the first diode chip 200 is provided with an anode and a cathode, the anode of the first diode chip 200 is electrically connected to the second pin 420, and the cathode of the first diode chip 200 is electrically connected to the first pin 410 through the first lead frame 110; in addition, the IGBT chip 300 is provided with a collector, an emitter, and a gate, wherein the collector of the IGBT chip 300 is electrically connected to the second pin 420 through the second lead frame 120, the emitter of the IGBT chip 300 is electrically connected to the third pin 430, and the gate of the IGBT chip 300 is electrically connected to the fourth pin 440.
In an embodiment, the first lead frame 110 is provided with a first conductive line, where the first conductive line is capable of communicating with the first diode chip 200 and the first pin 410, and in particular, the first conductive line is capable of communicating with the cathode of the first diode chip 200 and the first pin 410; in addition, for the second lead frame 120, a second conductive line is provided, wherein the second conductive line is capable of communicating the IGBT chip 300 and the second pin 420, specifically, the second conductive line is capable of communicating the collector of the IGBT chip 300 and the second pin 420.
In an embodiment, as shown in fig. 1, regarding the shape and size of the first and second lead frames 110 and 120, it may be matched with the respective first diode chip 200 and IGBT chip 300. Specifically, the shape and size of the first lead frame 110 may be matched with the shape and size of the first diode chip 200, and the shape and size of the second lead frame 120 may be matched with the shape and size of the IGBT chip 300.
By this arrangement, the area sizes of the first lead frame 110 and the second lead frame 120 can be set reasonably compactly, so that the integrated device 1 as a whole can be made smaller.
It is understood that, regarding the first diode chip 200 described above, it may be an electronic device made of a semiconductor material. The diode is provided with two electrodes, namely a positive electrode and a negative electrode, wherein the positive electrode is also called an anode, and the negative electrode is also called a cathode. When a forward voltage is applied between two poles of the diode, the diode is conducted; when a reverse voltage is applied across the diode, the diode turns off.
In addition, it can be understood that, regarding the IGBT chip 300, which is an insulated gate bipolar transistor chip, is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor, and has the advantages of both high input impedance of the mosfet and low on-voltage drop of the mosfet. The saturation voltage of the power transistor is reduced, the current carrying density is high, but the driving current is high; the MOSFET has small driving power, high switching speed, large conduction voltage drop and low current carrying density. Therefore, the IGBT chip 300 combines the advantages of the above two devices, and the driving power is small and the saturation voltage is reduced.
It is understood that the first diode chip 200 may be disposed on the first lead frame 110 by soldering, and the IGBT chip 300 may be disposed on the second lead frame 120 by soldering.
It should be noted that, regarding the first diode chip 200 described above, it may be used as a freewheeling diode in a Boost topology circuit; in addition, the IGBT chip 300 described above can be used as a switching transistor IGBT in a Boost topology. Alternatively, the circuit scenario of the first diode chip 200 and the IGBT chip 300 may be other scenarios, which are not particularly limited in the embodiments of the present application.
It should be noted that, as shown in fig. 1, in the embodiment of the present application, the first diode chip 200 and the IGBT chip 300 are integrated and packaged in the same package housing 700 at the same time, that is, the wafers of the two devices are integrated in the same package housing 700, and the connection of the circuits is realized through the internal bonding wires, so that the further integration of the two power devices is realized.
In addition, it is noted that, as shown in fig. 1, since the embodiment of the present application also connects the second pin 420 as a common pin to both the anode of the first diode chip 200 and the collector of the IGBT chip 300, the number of pins is reduced, the integration level of the integrated device 1 is further improved, and the miniaturization of the device is further realized.
In addition, it is noted that the embodiments of the present application also reduce cost and improve manufacturing efficiency, and only need to be assembled once when assembled to a circuit board, improving assembly efficiency.
In an embodiment, as shown in fig. 1, since the electrical characteristic of the back of the IGBT chip 300 is a collector and the back of the first diode chip 200 is a cathode, the potential characteristics of the back of the two chips are not uniform and thus cannot be placed on the same lead frame, so the first lead frame 110 and the second lead frame 120 are provided in the embodiment of the present application, and the first lead frame 110 and the second lead frame 120 may be separately provided.
In an embodiment, as shown in fig. 1, the first lead frame 110 may be integrally formed with the first lead 410, or the first lead frame 110 may be separately disposed from the first lead 410, and the first lead frame 110 and the first lead 410 are connected by a conductive lead; in addition, as shown in fig. 1, the second lead frame 120 may be integrally formed with the second lead 420, or the second lead frame 120 may be separately provided from the second lead 420, and the second lead frame 120 and the second lead 420 may be connected by a conductive lead. The embodiment of the present application is not particularly limited thereto.
In an embodiment, as shown in fig. 1, the integrated device 1 of the embodiment of the present application further includes, but is not limited to, an insulating board 500, the insulating board 500 may be mounted inside the package case 700, and the first lead frame 110 and the second lead frame 120 are fixed to one side of the insulating board 500.
Specifically, since the electrical characteristic of the back side of the first diode chip 200 is the cathode, and the electrical characteristic of the back side of the IGBT chip 300 is the collector, that is, the electrical characteristic corresponding to the first lead frame 110 is the cathode of the first diode chip 200, and the electrical characteristic corresponding to the second lead frame 120 is the collector of the IGBT chip 300.
Therefore, the electrical characteristics corresponding to the first lead frame 110 and the second lead frame 120 are also different, so the embodiment of the application implements the integration application of devices with different potential characteristics of the first diode chip 200 and the IGBT chip 300 in an isolated manner by providing the insulating board 500.
In an embodiment, the insulating plate 500 in the embodiment of the present application may be a ceramic plate, or may be a plate made of other insulating materials, and the material type of the insulating plate 500 in the embodiment of the present application is not specifically limited. Wherein, when the insulating plate 500 of the embodiment of the present application is a ceramic plate of aluminum oxide, not only electrical characteristic isolation can be achieved, but also thermal resistance of heat dissipation can be greatly reduced.
In an embodiment, as shown in fig. 1, the integrated device 1 of the embodiment of the present application further includes, but is not limited to, a metal plate 600, the metal plate 600 may be mounted inside the package case 700, and the metal plate 600 is mounted on the other side of the insulating plate 500.
Specifically, since the first diode chip 200 and the IGBT chip 300 generate a large amount of heat during operation, in order to ensure the normal operation of the first diode chip 200 and the IGBT chip 300, it is necessary to use the metal plate 600 for timely heat dissipation.
The material of the metal plate 600 may be copper, aluminum, or other materials, and the material of the metal plate 600 is not particularly limited in this embodiment.
In an embodiment, since the anode of the first diode chip 200 and the second pin 420 are disposed separately, in order to electrically connect the anode of the first diode chip 200 and the second pin 420, the anode of the first diode chip 200 may be connected to the second pin 420 through the first conductive lead 910.
In an embodiment, since the emitter of the IGBT chip 300 and the third pin 430 are disposed separately, in order to achieve the electrical connection between the emitter of the IGBT chip 300 and the third pin 430, the emitter of the IGBT chip 300 may be connected to the third pin 430 through the second conductive lead 920.
In an embodiment, since the gate of the IGBT chip 300 and the fourth pin 440 are disposed separately, in order to electrically connect the gate of the IGBT chip 300 and the fourth pin 440, the gate of the IGBT chip 300 may be connected to the fourth pin 440 through the third conductive lead 930.
In an embodiment, to prevent the IGBT chip 300 from failing, a second diode may be welded in anti-parallel between the collector and the emitter of the IGBT chip 300, and the second diode may be a fast recovery diode, which is used to provide a freewheeling channel for the IGBT chip 300 during operation and prevent breakdown. In this regard, in order to implement integrated packaging of the second diode, as shown in fig. 1, in the embodiment of the present application, the second diode chip 800 may be disposed on the second lead frame 120, where an anode of the second diode chip 800 is electrically connected to a collector of the IGBT chip 300 through the second lead frame 120, and a cathode of the second diode chip 800 is electrically connected to an emitter of the IGBT chip 300.
Since the second diode chip 800 is connected in anti-parallel between the collector and the emitter of the IGBT chip 300, that is, the electrical characteristics of the anode of the second diode chip 800 and the collector of the IGBT chip 300 are uniform, the second diode chip 800 and the IGBT chip 300 may be simultaneously disposed on the second lead frame 120.
It is understood that the second diode chip 800 may be disposed on the second lead frame 120 by soldering.
In one embodiment, since the electrical characteristics of the cathode of the second diode chip 800, the emitter of the IGBT chip 300, and the third pin 430 are uniform, and the three are separated.
Therefore, in order to electrically connect the cathode of the second diode chip 800 and the emitter of the IGBT chip 300 and the third pin 430, the cathode of the second diode chip 800 may be connected to the emitter of the IGBT chip 300 through the fourth conductive lead 940, or the cathode of the second diode chip 800 may be connected to the third pin 430 through the fifth conductive lead.
Based on the integrated device 1 of the above embodiments, the integrated device 1 of the embodiments of the present application includes, but is not limited to, the following technical effects: 1. the area of the heating device is reduced, the integration level is higher and the miniaturization is realized. 2. The distance from the collector of the IGBT chip 300 to the anode of the first diode chip 200 can be minimized and parasitic inductance can be minimized. In addition, the external buffer capacitor can be arranged in the shortest distance possible to reduce electromagnetic noise. 3. It is possible to prevent the IGBT from being disabled due to improper installation of the insulating plate 500. 4. Since the interference is reduced, the gate resistance can be reduced, so that the switching loss can be reduced, for example, the on-resistance can be reduced from 75Ω to 47Ω, so that the switching on-loss can be reduced by 15%, and the total loss of the IGBT can be reduced by 8.8%.
Based on the integrated device 1 of the above-described respective embodiments, respective embodiments of the electronic circuit, the circuit board, and the air conditioner of the present application are respectively presented below.
An embodiment of the application provides an electronic circuit comprising the integrated device 1 of any of the embodiments described above.
It should be noted that, since the electronic circuit of the embodiment of the present application includes the integrated device 1 of any of the embodiments described above, reference may be made to the specific implementation and technical effects of the integrated device 1 of any of the embodiments described above.
In addition, as shown in fig. 2, fig. 2 is a schematic diagram of an electronic circuit including the Boost module 10 according to one embodiment of the present application.
In an embodiment, the electronic circuit of the embodiment of the present application includes, but is not limited to, a Boost module 10, where the Boost module 10 includes an inductor L and an integrated device 1, and one end of the inductor L is connected to a second pin 420 of the integrated device 1.
In an embodiment, the electronic circuit of the present embodiment further includes, but is not limited to, a rectifying module 20 and a power factor correction module 30, where an input end of the rectifying module 20 is used for being connected to an ac power source, an output end of the rectifying module 20 is connected to an input side of the Boost module 10, an input end of the power factor correction module 30 is connected to an output side of the Boost module 10, and an output end of the power factor correction module 30 is used for being connected to a load, where the load may be a compressor or other devices, and the embodiment of the present application is not limited thereto specifically.
An embodiment of the present application further provides a circuit board including the electronic circuit of any one of the embodiments above.
It should be noted that, since the circuit board of the embodiment of the present application includes the electronic circuit of any one of the embodiments described above, and the electronic circuit of the embodiment described above includes the integrated device 1 of any one of the embodiments described above, reference may be made to the specific implementation and technical effect of the integrated device 1 of any one of the embodiments described above.
An embodiment of the present application further provides an air conditioner, including the circuit board of any one of the above embodiments.
It should be noted that, since the air conditioner of the embodiment of the present application includes the circuit board of the embodiment, and the circuit board of the embodiment includes the electronic circuit of any embodiment, and the electronic circuit of the embodiment includes the integrated device 1 of any embodiment, the specific implementation and technical effect of the air conditioner of the embodiment of the present application may refer to the specific implementation and technical effect of the integrated device 1 of any embodiment.
In the description of the embodiments of the present application, unless explicitly specified and limited otherwise, the terms "connected," "directly connected," "indirectly connected," "fixedly connected," "mounted," "assembled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; the terms "mounted," "connected," and "fixedly connected" may be directly connected or indirectly connected through intervening media, and may also be in communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
Although the embodiments disclosed in the present application are described above, the embodiments are only used for facilitating understanding of the present application, and are not intended to limit the present application. Any person skilled in the art to which this application pertains will be able to make any modifications and variations in form and detail of implementation without departing from the spirit and scope of the disclosure, but the scope of the patent claims of this application shall be defined by the appended claims.
While the preferred embodiments of the present application have been described in detail, the present application is not limited to the above embodiments, and various equivalent modifications and substitutions can be made by those skilled in the art without departing from the spirit and scope of the present application, and these equivalent modifications and substitutions are intended to be included in the scope of the present application as defined in the appended claims.
Claims (10)
1. An integrated device, comprising:
the packaging shell is provided with a first pin, a second pin, a third pin and a fourth pin;
the first lead frame and the second lead frame are arranged inside the packaging shell;
the first diode chip is arranged on the first lead frame, the cathode of the first diode chip is electrically connected to the first pin through the first lead frame, and the anode of the first diode chip is electrically connected with the second pin;
the IGBT chip is arranged on the second lead frame, the collector electrode of the IGBT chip is electrically connected to the second pin through the second lead frame, the emitter electrode of the IGBT chip is electrically connected with the third pin, and the grid electrode of the IGBT chip is electrically connected with the fourth pin;
the integrated device further comprises an insulating plate and a metal plate, wherein the insulating plate is arranged in the packaging shell, the first lead frame and the second lead frame are both fixed on one side of the insulating plate, the metal plate is arranged in the packaging shell, and the metal plate is arranged on the other side of the insulating plate;
the integrated device further comprises a second diode chip, the second diode chip is arranged on the second lead frame, the anode of the second diode chip is electrically connected to the collector of the IGBT chip through the second lead frame, and the cathode of the second diode chip is electrically connected with the emitter of the IGBT chip.
2. The integrated device of claim 1, wherein the first lead frame and the second lead frame are disposed apart, the first lead frame and the first pin are integrally formed, and the second lead frame and the second pin are integrally formed.
3. The integrated device of claim 1, wherein the insulating plate is a ceramic plate.
4. The integrated device of claim 1, wherein an anode of the first diode chip is connected to the second pin through a first conductive lead, an emitter of the IGBT chip is connected to the third pin through a second conductive lead, and a gate of the IGBT chip is connected to the fourth pin through a third conductive lead.
5. The integrated device of claim 1, wherein a cathode of the second diode chip is connected to an emitter of the IGBT chip by a fourth conductive lead.
6. An electronic circuit comprising an integrated device as claimed in any one of claims 1 to 5.
7. The electronic circuit of claim 6, comprising a Boost module comprising an inductor and the integrated device, one end of the inductor being connected to the second pin of the integrated device.
8. The electronic circuit of claim 7, further comprising a rectifying module and a power factor correction module, the rectifying module connected to an input side of the Boost module, the power factor correction module connected to an output side of the Boost module.
9. A circuit board comprising the electronic circuit of any one of claims 6 to 8.
10. An air conditioner comprising the circuit board of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322106031.2U CN220753430U (en) | 2023-08-04 | 2023-08-04 | Integrated device, electronic circuit, circuit board and air conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322106031.2U CN220753430U (en) | 2023-08-04 | 2023-08-04 | Integrated device, electronic circuit, circuit board and air conditioner |
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| Publication Number | Publication Date |
|---|---|
| CN220753430U true CN220753430U (en) | 2024-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322106031.2U Active CN220753430U (en) | 2023-08-04 | 2023-08-04 | Integrated device, electronic circuit, circuit board and air conditioner |
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| CN (1) | CN220753430U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118507475A (en) * | 2024-05-21 | 2024-08-16 | 江苏易矽科技有限公司 | Low-noise and internal-insulation IGBT single-tube structure for BOOST circuit |
-
2023
- 2023-08-04 CN CN202322106031.2U patent/CN220753430U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118507475A (en) * | 2024-05-21 | 2024-08-16 | 江苏易矽科技有限公司 | Low-noise and internal-insulation IGBT single-tube structure for BOOST circuit |
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