CN220420574U - Electroplating laser burn-through prevention unidirectional conduction wafer - Google Patents
Electroplating laser burn-through prevention unidirectional conduction wafer Download PDFInfo
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- CN220420574U CN220420574U CN202321061131.1U CN202321061131U CN220420574U CN 220420574 U CN220420574 U CN 220420574U CN 202321061131 U CN202321061131 U CN 202321061131U CN 220420574 U CN220420574 U CN 220420574U
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- electroplating
- copper foil
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- 238000009713 electroplating Methods 0.000 title claims abstract description 45
- 230000002265 prevention Effects 0.000 title description 5
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000011889 copper foil Substances 0.000 claims abstract description 31
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 239000003814 drug Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 56
- 238000007747 plating Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The utility model discloses an electroplating laser-burn-through-prevention unidirectional conducting wafer which comprises a wafer layer, a UV layer, a copper foil and an electroplating metal layer. One surface of the wafer layer contains a photoetching circuit, and the single-channel chip takes the surface of the photoetching circuit as the front surface; the UV layer is arranged close to one side of the back surface of the wafer layer; one end of the copper foil is positioned between the UV layer and the wafer layer, and the other end of the copper foil extends out of the outer side of the edge of the wafer layer and is used for being connected with an anode of a rectifier in the electroplating device; the electroplated metal layer is positioned on the upper layer of the wafer layer and clings to the photoetching circuit surface, and the thickness of the electroplated metal layer is larger than 0.3 mu m. The electroplated metal layer is obtained by adding a UV layer on the back surface of the wafer and adding a copper foil between the single-channel chip and the UV layer in an electroplating way. The electroplated metal layer thickens the surface electrode of the chip, so that laser energy can be effectively resisted, the electroplating cost is low, and the batch processing efficiency is high.
Description
Technical Field
The utility model relates to the technical field of chip processing, in particular to an electroplating laser burn-through prevention unidirectional conduction wafer.
Background
Chips, also known as microcircuits, refer to silicon wafers containing integrated circuits, which are small in size, often part of a computer or other electronic device, are a way in electronics to miniaturize circuits (including mainly semiconductor devices, also including passive components, etc.), and are typically fabricated on the surface of a semiconductor wafer. Hundreds of chips can be prepared on the surface of one wafer, and a series of subsequent processing operations such as coating and dividing the wafer are required for the normal use of the subsequent chips, so as to prepare a chip product which can be directly used on electronic equipment.
In order to make the integrated circuit contained in the chip and other external electronic devices form normal circuit connection, the electrode of the chip needs to be led out. In the current process flow of panel-level packaging, the lead-out mode of the chip electrode is mainly a mode of laser drilling blind holes and copper plating, and the chip electrode and a bonding pad to be interconnected with the chip electrode are led out, but the laser drilling has higher requirements on the chip bonding pad, and common materials cannot bear the energy of laser, are easy to damage, lead to the damage of the chip, and have higher limitation.
To solve the problem of greater limitation, a plating layer is generally added on the surface of the chip to protect the chip, so as to reduce the limitation of the chip in the process flow of panel-level packaging. The surface of the chip is generally coated with a film on the wafer by adopting an evaporation scheme, in the general evaporation scheme, the thickness of gold and silver can be controlled to be about 0.075 mu m, but the thickness of the gold and silver is about 0.075 mu m, the laser energy is easy to burn through surface metal, and the laser energy needs to be strictly controlled so as to ensure the yield of chip production; however, if the thickness of the gold and silver is increased, the production cost is increased by times.
Disclosure of Invention
In order to overcome the defect of high cost of forming thicker gold and silver layers on the surface of a chip by vapor deposition, the utility model provides an electroplating laser burn-through prevention unidirectional conduction wafer.
The technical scheme of the utility model is as follows:
an electroplating anti-laser-burn-through one-way conduction wafer comprises,
the wafer layer comprises a photoetching circuit which is conducted in one direction, and one surface of the photoetching circuit is used as the front surface of the wafer layer;
the UV layer is arranged close to one side of the back surface of the wafer layer;
one end of the copper foil is positioned between the UV layer and the wafer layer, the other end of the copper foil extends out of the outer side of the edge of the wafer layer, and the extending end of the copper foil is used for being connected with an anode of a rectifier in the electroplating device;
and the electroplated metal layer is positioned on the upper layer of the wafer layer and clings to one surface of the photoetching circuit, and the thickness of the electroplated metal layer is more than 0.3 mu m.
Further, in an embodiment, the copper foil has a thickness of 5um or more.
Further, in an embodiment, the electroplated metal layer material includes one or more of copper, gold, silver, nickel, and iron.
Further, in an embodiment, the electroplated metal layer comprises one or more combinations of electroplated copper layer, electroplated silver layer, electroplated gold layer, electroplated nickel layer, and electroplated iron layer.
Further, in one embodiment, an upper surface of one end of the copper foil is closely attached to the back surface of the wafer layer.
Further, in an embodiment, the UV layer covers the wafer layer, the UV layer covers the back surface of the wafer layer, and the difference between the radius of the UV layer and the radius of the wafer layer is L1, L1 > 0.
Further, in one embodiment, the length of the copper foil extending out of the wafer layer is L2, wherein L2 > L1.
Further, in an embodiment, a protective film layer is further disposed above the electroplated metal layer, and the protective film layer is made by soaking an organic solder protection liquid medicine into a film.
The utility model according to the scheme has the beneficial effects that:
1) In this application, a plated metal layer having a thickness greater than 0.3um is formed on the front side of the wafer. The electroplated metal layer is obtained by electroplating a UV layer additionally arranged on the back surface of the wafer layer and a copper foil additionally arranged between the wafer layer and the UV layer. The electroplated metal layer thickens the surface electrode of the chip, so that the cost is low, and the batch processing efficiency is high.
2) The electroplated metal layer has high thickness, and can effectively resist laser energy, so that the follow-up laser processing has low requirement on controlling the laser energy, thereby being beneficial to reducing the production investment of the whole chip production line and reducing the production cost.
3) The metal material of the electroplated metal layer can be freely selected, the thickness can be adjusted, and the selectivity is high.
4) The electroplated metal layer is combined with the chip in an electroplating way, so that the bonding force is stronger, the copper plating combination is facilitated at the back, and the bonding force is stronger.
Drawings
FIG. 1 is a schematic cross-sectional view of a center of an electroplated laser burn-through resistant unidirectional through wafer of the present utility model;
FIG. 2 is a top view of an electroplated laser burn-through resistant unidirectional conductive wafer of the present utility model.
In the figure, 1, wafer layer; 2. electroplating a metal layer; 3. a UV layer; 4. copper foil.
Detailed Description
The utility model is further described below with reference to the drawings and embodiments. It will be understood that when an element is referred to as being "fixed" to another element, it can be directly on the other element or one or more intervening elements may be present therebetween. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or one or more intervening elements may be present therebetween. The terms "vertical," "horizontal," "left," "right," "inner," "outer," and the like are used in this specification for purposes of illustration only. In the description of the present utility model, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or implicitly indicating the number of technical features indicated. Thus, unless otherwise indicated, features defining "first", "second" may include one or more such features either explicitly or implicitly; the meaning of "plurality" is two or more. The terms "comprises," "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that one or more other features, integers, steps, operations, elements, components, and/or groups thereof may be present or added.
Furthermore, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; either directly or indirectly through intermediaries, or in communication with each other. All technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used in the description of the utility model herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used in this specification includes any and all combinations of one or more of the associated listed items.
In addition, the technical features mentioned in the different embodiments of the utility model described below can be combined with one another as long as they do not conflict with one another.
As shown in fig. 1 and 2, the present utility model provides an embodiment of an electroplating anti-laser burn-through unidirectional conductive wafer, which comprises a wafer layer 1, a UV layer 3, an electroplated metal layer 2 and a copper foil 4. The wafer layer 1 comprises a photoetching circuit which is conducted in one direction, and one surface of the photoetching circuit is taken as the front surface of the wafer layer 1; the UV layer 3 is closely attached to one side of the back surface of the wafer layer 1, the UV layer 3 covers the back surface of the wafer layer 1, and the difference value between the radius of the UV layer 3 and the radius of the wafer layer 1 is L1, wherein L1 is more than 0; one end of the copper foil 4 is positioned between the UV layer 3 and the wafer layer 1, the upper surface of the end of the copper foil 4 is tightly attached to the back surface of the wafer layer 1, the other end of the copper foil extends out of the edge of the wafer layer 1, the length value of the copper foil 4 extending out of the wafer layer 1 is L2, L2 is more than L1, and one end of the copper foil 4 extending out is used for being connected with the anode of a rectifier in an electroplating device. The electroplated metal layer 2 is an electroplated copper layer, is positioned on the upper layer of the wafer layer 1 and is clung to one surface of the photoetching circuit, and the thickness of the electroplated metal layer 2 is 0.3 mu m. In this application, add UV layer 3 on the wafer back, copper foil 4 that sets up between wafer layer 1 and the UV layer 3 has conductivity to make the electroplated metal layer 2 in the structure of this application can use electroplating to plate, and the thickness is thicker, and electroplating increases chip surface electrode thickness low cost and batch processing efficiency is higher. And the electroplated metal layer 2 with the surface reaching 0.3 mu m thickens the electrode on the surface of the chip, so that the control requirement on laser energy in the subsequent laser processing is reduced, the production investment of the whole chip production line is reduced, and the production cost is reduced.
In the preparation of the utility model, an electroplating bath, a rectifier and electroplating liquid are prepared, and the surface of the UV layer 3 of the wafer with the electroless metal layer is fixed on a piece of non-conductive FR 4; the electroplating solution is filled in the electroplating bath, the inflation is started, the copper foil 4 is clamped at the anode of the rectifier, and the cathode of the rectifier is connected with the metal copper to be electroplated; and (3) opening the rectifier and starting electroplating to obtain the electroplated laser burn-through prevention unidirectional conduction wafer. The copper foil 4 is conductive, so that the front surface of the wafer has negative charges, metal copper ions in the electroplating solution are combined on the surface of the wafer to form an electroplated copper layer, the formed electroplated copper layer is fully covered, the thickness is uniform, and the preparation method is simple and efficient and has low cost.
In other embodiments, the thickness of the electroplated metal layer 2 may be larger than 0.3 μm according to the requirements, and the selectivity is strong and the preparation is easy by adjusting the electroplating time, the concentration of the electroplating solution or the electroplating current.
In this embodiment, the thickness of the copper foil 4 is 5um or more, and the copper foil 4 satisfies the requirement of the conductivity of the copper foil 4 during electroplating.
In this embodiment, the material of the electroplated metal layer 2 is copper, i.e. the electroplated metal layer 2 is copper layer 3. In other embodiments, the material of the electroplated metal layer 2 may be gold, silver, nickel or iron, i.e. the electroplated metal layer 2 may be an electroplated copper layer, an electroplated gold layer, an electroplated silver layer, an electroplated nickel layer or an electroplated iron layer. The material can be different according to actual production demand, electroplate the electroplated metal layer 2 of different materials, can freely select, and the selectivity is strong.
In an embodiment, the electroplated metal layer 2 may be formed by combining multiple layers of different metals, such as electroplating a copper electroplating layer on the front surface of the wafer layer 1, attaching the copper electroplating layer to the upper surface of the wafer layer 1, and optionally electroplating a silver electroplating layer, a gold electroplating layer, a nickel electroplating layer or an iron electroplating layer above the copper electroplating layer, i.e. the electroplated metal layer 2 formed by electroplating multiple metal material combinations may be disposed on the surface of the wafer according to design requirements, so as to meet electrode requirements in the subsequent chip packaging process. In other embodiments, the plating metal attached to the upper surface of the wafer layer may be any one of gold, silver, nickel and iron, and then another metal plating layer is plated on the plating metal layer, so that the plating metal layer 2 has a high selectivity, and the preparation of the plating layers of different materials can be completed only by changing the plating solution, the plating metal types, the time and the sequence of the plating metal changes during the preparation, so that the preparation is simple and convenient.
In one embodiment, the electroplated metal layer 2 may comprise three or more electroplated layers, and the adjacent electroplated layers are different in material.
In an embodiment, a protective film layer may be further disposed above the electroplated metal layer 2, and the protective film layer 3 is made by soaking an organic solder resist solution into a film, that is, soaking the electroplated wafer in the OSP resist solution for about 1 min. The protective film layer 3 prepared by soaking and forming the OSP liquid medicine has oxidation resistance, thermal shock resistance and moisture resistance and is used for protecting the surface of the electroplated metal layer 2 from oxidation or vulcanization in a normal environment; and in the subsequent high temperature welding, the soldering flux is easy to quickly remove.
According to the utility model, the UV layer 3 is utilized to ensure that metal electroplating is only carried out on the front surface of the wafer, the electroplated metal layer 2 is ensured to completely cover the upper surface of the wafer, and during normal chip cutting, a UV film or a blue film is adopted for processing, so that the wafer film processing ring can be electroplated together during electroplating, the wafer film processing ring is obtained after chemical plating, and then the wafer film processing ring is directly cut, so that the step of removing the wafer film processing ring during production operation is reduced.
The copper foil 4 in the application has conductivity, can enlarge the volume of the electroplating bath according to the principle characteristics of chemical electroplating, can process two or more wafers at the same time, and effectively improves the production efficiency of unit time.
It will be understood that modifications and variations will be apparent to those skilled in the art from the foregoing description, and it is intended that all such modifications and variations be included within the scope of the following claims.
While the utility model has been described above with reference to the accompanying drawings, it will be apparent that the implementation of the utility model is not limited by the above manner, and it is within the scope of the utility model to apply the inventive concept and technical solution to other situations as long as various improvements made by the inventive concept and technical solution are adopted, or without any improvement.
Claims (7)
1. The electroplating laser-burn-through-prevention unidirectional conductive wafer is characterized in that the electroplating laser-burn-through-prevention unidirectional conductive wafer comprises,
the wafer layer comprises a photoetching circuit which is conducted in one direction, and one surface of the photoetching circuit is used as the front surface of the wafer layer;
the UV layer is arranged close to one side of the back surface of the wafer layer;
one end of the copper foil is positioned between the UV layer and the wafer layer, the other end of the copper foil extends out of the outer side of the edge of the wafer layer, and the extending end of the copper foil is used for being connected with an anode of a rectifier in the electroplating device;
and the electroplated metal layer is positioned on the upper layer of the wafer layer and clings to one surface of the photoetching circuit, and the thickness of the electroplated metal layer is more than 0.3 mu m.
2. The electroplated laser burn-through resistant unidirectional through wafer of claim 1, wherein the copper foil has a thickness of 5um or greater.
3. The electroplated laser burn-through resistant unidirectional through wafer of claim 1, wherein the electroplated metal layer comprises one or more of an electroplated copper layer, an electroplated silver layer, an electroplated gold layer, an electroplated nickel layer, and an electroplated iron layer.
4. The electroplated laser burn-through resistant unidirectional through wafer of claim 1, wherein an upper surface of one end of the copper foil is in close proximity to the back surface of the wafer layer.
5. The electroplated laser burn-through resistant unidirectional through wafer of claim 1, wherein the UV layer covers the back surface of the wafer layer, the difference between the radius of the UV layer and the radius of the wafer layer being L1, L1 > 0.
6. The electroplated laser burn-through resistant unidirectional flux wafer of claim 5, wherein the copper foil extends beyond the wafer layer by a length of L2, L2 > L1.
7. The electroplated one-way conducting wafer capable of preventing laser burning through according to claim 1, wherein a protective film layer is further arranged above the electroplated metal layer, and the protective film layer is prepared by soaking organic solder protection liquid medicine into the protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321061131.1U CN220420574U (en) | 2023-05-06 | 2023-05-06 | Electroplating laser burn-through prevention unidirectional conduction wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321061131.1U CN220420574U (en) | 2023-05-06 | 2023-05-06 | Electroplating laser burn-through prevention unidirectional conduction wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220420574U true CN220420574U (en) | 2024-01-30 |
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ID=89652259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321061131.1U Active CN220420574U (en) | 2023-05-06 | 2023-05-06 | Electroplating laser burn-through prevention unidirectional conduction wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220420574U (en) |
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2023
- 2023-05-06 CN CN202321061131.1U patent/CN220420574U/en active Active
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