CN219608234U - Anti-radio-frequency interference digital pyroelectric infrared sensor - Google Patents
Anti-radio-frequency interference digital pyroelectric infrared sensor Download PDFInfo
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- CN219608234U CN219608234U CN202321293043.4U CN202321293043U CN219608234U CN 219608234 U CN219608234 U CN 219608234U CN 202321293043 U CN202321293043 U CN 202321293043U CN 219608234 U CN219608234 U CN 219608234U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The anti-radio-frequency interference digital pyroelectric infrared sensor comprises a power input end Vdd, a signal output end Vout, a ground end GND, a sensitive element chip, a signal processing chip, an N-type field effect transistor Q1 and a resistor R3, wherein a signal output pin OUT is connected with the signal output end Vout. The grid electrode of the N-type field effect tube Q1 is connected with the first end of the sensitive element chip, the drain electrode of the N-type field effect tube Q1 and the power supply anode pin VDD of the signal processing chip are respectively connected with the power supply input end Vdd, and the common connection point of the source electrode of the N-type field effect tube Q1 and one end of the resistor R3 is connected with the signal input pin IN of the signal processing chip; the second end of the sensitive element chip, the other end of the resistor R3 and the power supply negative electrode pin VSS of the signal processing chip are all connected with the grounding end GND. The utility model has stronger radio frequency interference resistance.
Description
Technical Field
The utility model relates to a pyroelectric infrared sensor technology.
Background
Pyroelectric infrared sensors are a type of detector that converts infrared radiation signals into electrical signals. Fig. 1 shows a schematic circuit diagram of a conventional digital pyroelectric infrared sensor, as shown IN fig. 1, the conventional digital pyroelectric infrared sensor mainly comprises a power input end Vdd, a signal output end Vout, a ground end GND, a sensitive element chip 1 and a signal processing chip 2, wherein the power input end Vdd is connected with a power positive electrode pin Vdd of the signal processing chip 2, a first end of the sensitive element chip 1 is connected with a signal input pin IN of the signal processing chip 2, a second end of the sensitive element chip 1 is connected with a power negative electrode pin VSS of the signal processing chip 2, and a signal output pin OUT of the signal processing chip 2 is connected with the signal output end Vout. The signal processing chip 2 processes the output signal of the sensor chip 1 and outputs a digital signal.
Currently, as more and more electronic products communicate by adopting a wireless method, the pyroelectric infrared sensor is more and more affected by the radio frequency interference of the environment in operation. Because the impedance of the sensitive element chip is higher (the impedance of the ceramic sensitive element chip is usually about 1000G omega), the output signal is easily influenced by external radio frequency interference to generate clutter, and finally the signal to noise ratio is influenced, and even the misoperation phenomenon of an electronic module product provided with the sensor can be caused.
Disclosure of Invention
The utility model aims to provide a digital pyroelectric infrared sensor with strong radio-frequency interference resistance.
According to one embodiment of the utility model, the anti-radio-frequency interference digital pyroelectric infrared sensor comprises a power supply input end Vdd, a signal output end Vout, a ground end GND, a sensitive element chip and a signal processing chip, wherein the signal processing chip comprises a power supply anode pin VDD, a power supply cathode pin VSS, a signal input pin IN and a signal output pin OUT, and the signal output pin OUT is connected with the signal output end Vout; the grid electrode of the N-type field effect tube Q1 is connected with the first end of the sensitive element chip, the drain electrode of the N-type field effect tube Q1 and the power supply anode pin VDD of the signal processing chip are respectively connected with the power supply input end Vdd, and the common connection point of the source electrode of the N-type field effect tube Q1 and one end of the resistor R3 is connected with the signal input pin IN of the signal processing chip; the second end of the sensitive element chip, the other end of the resistor R3 and the power supply negative electrode pin VSS of the signal processing chip are all connected with the grounding end GND.
The anti-radio-frequency interference digital pyroelectric infrared sensor is characterized in that a signal processing chip, an N-type field effect transistor Q1 and a resistor R3 are arranged on a PCB, the PCB is provided with four copper foil layers and three insulating layers, the four copper foil layers and the three insulating layers are alternately stacked, and the two copper foil layers are respectively positioned on the top layer and the bottom layer of the PCB.
The anti-radio-frequency interference digital pyroelectric infrared sensor comprises a first filter circuit, wherein the input end of the first filter circuit and a power supply positive electrode pin VDD of the signal processing chip are respectively connected with a power supply input end Vdd, and the output end of the first filter circuit is connected with the drain electrode of the N-type field effect tube Q1.
The anti-radio-frequency interference digital pyroelectric infrared sensor comprises a resistor R1 and a capacitor C1, wherein one end of the resistor R1 is connected with a power input end Vdd and a power positive electrode pin Vdd of a signal processing chip respectively, a common contact point of the other end of the resistor R1 and one end of the capacitor C1 is connected with a drain electrode of an N-type field effect tube Q1, and the other end of the capacitor C1 is connected with a ground end GND.
The anti-radio-frequency interference digital pyroelectric infrared sensor comprises a second filter circuit, wherein the input end of the second filter circuit is connected with the source electrode of the N-type field effect transistor Q1, and the common connection point of the output end of the second filter circuit and one end of the resistor R3 is connected with the signal input pin IN of the signal processing chip.
The above-mentioned anti-radio frequency interference digital pyroelectric infrared sensor, wherein, the second filter circuit includes resistance R2 and electric capacity C2, and resistance R2's one end is connected with N type field effect transistor Q1's source, and resistance R2's the other end, electric capacity C2's one end and the common contact of resistance R3's one end are connected IN signal processing chip's signal input pin IN, and electric capacity C2's the other end is connected with ground connection GND.
The utility model has at least the following advantages:
1. the digital pyroelectric infrared sensor of the embodiment is provided with the N-type field effect tube Q1, weak signals output by the sensitive element chip are stably reinforced by the N-type field effect tube Q1 and then transmitted to the signal processing chip, and the signal strength obtained by the signal processing chip is high, so that the digital pyroelectric infrared sensor is not easily affected by radio frequency interference, and the false alarm misoperation of the digital pyroelectric infrared sensor application due to the radio frequency interference is greatly reduced;
2. the PCB circuit board of the embodiment is provided with four copper foil layers, and two copper foils positioned inside the PCB circuit board increase the grounding copper laying area and can block and absorb radio frequency interference, so that the radio frequency interference resistance of the product is improved.
Drawings
Fig. 1 shows a schematic circuit diagram of a conventional digital pyroelectric infrared sensor.
Fig. 2 and 3 are schematic circuit diagrams showing a first embodiment and a second embodiment of the anti-radio frequency interference digital pyroelectric infrared sensor of the present utility model, respectively.
Description of the embodiments
The utility model is further described below with reference to the accompanying drawings.
Fig. 2 is a schematic circuit diagram of a digital pyroelectric infrared sensor with resistance to radio frequency interference according to a first embodiment of the present utility model. Please refer to fig. 2. The anti-radio frequency interference digital pyroelectric infrared sensor according to the first embodiment of the present utility model comprises a power input terminal Vdd, a signal output terminal Vout, a ground terminal GND, a sensor chip 1, a signal processing chip 2, an N-type field effect transistor Q1, a first filter circuit 31, a second filter circuit 32, a blocking filter circuit 33 and a resistor R3.
The power input terminal Vdd is used for connecting an external power supply, the signal output terminal Vout is used for outputting signals externally, and the ground terminal GND is used for grounding.
The power input terminal Vdd is connected to the input terminal of the first filter circuit 31 and the power positive terminal pin Vdd of the signal processing chip 2, respectively, and the output terminal of the first filter circuit 31 is connected to the drain electrode of the N-type field effect transistor Q1. In this embodiment, the first filter circuit 31 includes a resistor R1 and a capacitor C1, wherein one end of the resistor R1 is connected to the power input terminal Vdd and the power positive terminal Vdd of the signal processing chip, respectively, and a common connection point between the other end of the resistor R1 and one end of the capacitor C1 is connected to the drain of the N-type field effect transistor Q1.
The grid electrode of the N-type field effect transistor Q1 is connected with the first end of the sensitive element chip 1, the source electrode of the N-type field effect transistor Q1 is connected with the input end of the second filter circuit 32, the common connection point of the output end of the second filter circuit and one end of the resistor R3 is connected with the input end of the blocking filter circuit 33, and the output end of the blocking filter circuit 33 is connected with the signal input pin IN of the signal processing chip 2. The signal output pin OUT of the signal processing chip 2 is connected to the signal output terminal Vout.
In this embodiment, the N-type fet Q1 is an N-channel junction fet. The second filter circuit 32 includes a resistor R2 and a capacitor C2, one end of the resistor R2 is connected to the source of the N-type field effect transistor Q1, and a common connection point of the other end of the resistor R2, one end of the capacitor C2 and one end of the resistor R3 is connected to the input end of the blocking filter circuit 33. The blocking filter circuit 33 includes a capacitor C3 and a resistor R4, wherein one end of the capacitor C3 is connected to a common connection point between the output end of the second filter circuit 32 and one end of the resistor R3, and the common connection point between the capacitor C3 and one end of the resistor R4 is connected to the signal input pin IN of the signal processing chip 2.
The second end of the sensor chip 1, the other end of the resistor R3, the other end of the resistor R4, the other end of the capacitor C1, the other end of the capacitor C2 and the power supply negative electrode pin VSS of the signal processing chip 1 are all connected with the ground end GND.
The first filter circuit 31 composed of the resistor R1 and the capacitor C1 is used for stabilizing the voltage of the drain electrode of the N-type field effect transistor Q1, the second filter circuit 32 composed of the resistor R2 and the capacitor C2 is used for stabilizing the voltage of the source electrode of the N-type field effect transistor Q1, and the resistor R3 is used for establishing a working point for the N-type field effect transistor Q1.
Further, the signal processing chip 2, the N-type field effect transistor Q1, the first filter circuit 31, the second filter circuit 32, the blocking filter circuit 33 and the resistor R3 are all mounted on a PCB circuit board, the PCB circuit board has four copper foil layers and three insulating layers, and the four copper foil layers and the three insulating layers are alternately stacked, wherein the two copper foil layers are respectively located on the top layer and the bottom layer of the PCB circuit board.
In some specific applications, the sensor chip 1 is a ceramic sensor chip. The signal processing chip 2 is a chip manufactured by ELMOS corporation of germany and having a model E931.97.
The digital pyroelectric infrared sensor of the embodiment is provided with an N-type field effect transistor Q1, and weak signals output by the sensitive element chip 1 are stably reinforced by the N-type field effect transistor Q1 and then transmitted to the signal processing chip 2, and the signal strength obtained by the signal processing chip 2 is high, so that the signal processing chip is not easily affected by radio frequency interference. The signal processing chip 2 processes the signal and outputs a digital signal. In addition, the PCB circuit board of the embodiment is provided with four copper foil layers, and compared with the case that the conventional PCB circuit board is only provided with a single layer or two copper foil layers, the two copper foil layers inside the PCB circuit board increase the grounding copper spreading area, and can block and absorb radio frequency interference. The copper foil layers on the top and bottom layers of the PCB can be used for placing electronic components. The factors improve the radio-frequency interference resistance of the digital pyroelectric sensor provided by the embodiment of the utility model, and the signal-to-noise ratio of the sensor is enhanced.
Fig. 3 is a schematic circuit diagram showing a pyroelectric infrared sensor according to a second embodiment of the present utility model. The second embodiment is mainly different from the first embodiment in that the first filter circuit 31, the second filter circuit 32, and the blocking filter circuit 33 are eliminated.
IN the second embodiment, a gate of an N-type field effect transistor Q1 is connected to a first end of a sensing element chip 1, a drain of the N-type field effect transistor Q1 and a power supply positive electrode pin VDD of a signal processing chip are respectively connected to a power supply input terminal VDD, and a common connection point of a source of the N-type field effect transistor Q1 and one end of a resistor R3 is connected to a signal input pin IN of the signal processing chip; the second end of the sensor chip 1, the other end of the resistor R3 and the power supply cathode pin VSS of the signal processing chip 2 are all connected with the grounding end GND, and the signal output pin OUT of the signal processing chip 2 is connected with the signal output end Vout.
In the second embodiment, the signal-to-noise ratio performance of the digital pyroelectric infrared sensor is not better than that of the first embodiment because the first filter circuit 31, the second filter circuit 32 and the blocking filter circuit 33 are not provided, but the function of resisting radio frequency interference can be achieved because the N-type field effect transistor Q1 is provided.
In other embodiments, the first filter circuit 31 and/or the second filter circuit 32 and/or the blocking filter circuit 33 may be added to the pyroelectric infrared sensor of the second embodiment, and after the filter circuit is added, noise can be filtered, so that the signal to noise ratio of the sensor product is improved.
Claims (10)
1. The anti-radio-frequency interference digital pyroelectric infrared sensor comprises a power input end Vdd, a signal output end Vout, a ground end GND, a sensitive element chip and a signal processing chip, wherein the signal processing chip comprises a power anode pin VDD, a power cathode pin VSS, a signal input pin IN and a signal output pin OUT, and the signal output pin OUT is connected with the signal output end Vout;
the grid electrode of the N-type field effect tube Q1 is connected with the first end of the sensitive element chip, the drain electrode of the N-type field effect tube Q1 and the power supply anode pin VDD of the signal processing chip are respectively connected with the power supply input end Vdd, and the common connection point of the source electrode of the N-type field effect tube Q1 and one end of the resistor R3 is connected with the signal input pin IN of the signal processing chip;
the second end of the sensor chip, the other end of the resistor R3 and the power supply negative electrode pin VSS of the signal processing chip are all connected with the grounding end GND.
2. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 1, wherein the anti-radio frequency interference digital pyroelectric infrared sensor comprises a first filter circuit, an input end of the first filter circuit and a power supply positive electrode pin VDD of the signal processing chip are respectively connected with a power supply input end VDD, and an output end of the first filter circuit is connected with a drain electrode of the N-type field effect transistor Q1.
3. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 2, wherein the first filter circuit comprises a resistor R1 and a capacitor C1, one end of the resistor R1 is connected with the power input terminal Vdd and the power positive terminal pin Vdd of the signal processing chip respectively, the common connection point between the other end of the resistor R1 and one end of the capacitor C1 is connected with the drain electrode of the N-type field effect transistor Q1, and the other end of the capacitor C1 is connected with the ground terminal GND.
4. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 1, wherein the anti-radio frequency interference digital pyroelectric infrared sensor comprises a second filter circuit, wherein an input end of the second filter circuit is connected with a source electrode of the N-type field effect transistor Q1, and a common connection point between an output end of the second filter circuit and one end of the resistor R3 is connected with a signal input pin IN of the signal processing chip.
5. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 4, wherein the second filter circuit comprises a resistor R2 and a capacitor C2, one end of the resistor R2 is connected with the source of the N-type field effect transistor Q1, the common connection point of the other end of the resistor R2, one end of the capacitor C2 and one end of the resistor R3 is connected with the signal input pin IN of the signal processing chip, and the other end of the capacitor C2 is connected with the ground GND.
6. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 4, wherein the pyroelectric infrared sensor comprises a blocking filter circuit, an input end of the blocking filter circuit is connected to a common connection point between an output end of the second filter circuit and one end of the resistor R3, and an output end of the blocking filter circuit is connected to a signal input pin IN of the signal processing chip.
7. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 6, wherein the blocking filter circuit comprises a capacitor C3 and a resistor R4, one end of the capacitor C3 is connected to a common connection point between the output end of the second filter circuit and one end of the resistor R3, the common connection point between the capacitor C3 and one end of the resistor R4 is connected to the signal input pin IN of the signal processing chip, and the other end of the resistor R4 is connected to the ground GND.
8. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 1, wherein the signal processing chip, the N-type field effect transistor Q1 and the resistor R3 are mounted on a PCB circuit board, the PCB circuit board has four copper foil layers and three insulating layers, which are alternately stacked, wherein the two copper foil layers are respectively located at a top layer and a bottom layer of the PCB circuit board.
9. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 1, wherein the N-type field effect transistor Q1 is an N-channel junction type field effect transistor.
10. The anti-radio frequency interference digital pyroelectric infrared sensor according to claim 1, wherein said sensor chip is a ceramic sensor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321293043.4U CN219608234U (en) | 2023-05-25 | 2023-05-25 | Anti-radio-frequency interference digital pyroelectric infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321293043.4U CN219608234U (en) | 2023-05-25 | 2023-05-25 | Anti-radio-frequency interference digital pyroelectric infrared sensor |
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| Publication Number | Publication Date |
|---|---|
| CN219608234U true CN219608234U (en) | 2023-08-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202321293043.4U Active CN219608234U (en) | 2023-05-25 | 2023-05-25 | Anti-radio-frequency interference digital pyroelectric infrared sensor |
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| CN (1) | CN219608234U (en) |
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2023
- 2023-05-25 CN CN202321293043.4U patent/CN219608234U/en active Active
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