CN219422198U - Atomizing core, atomizer and aerosol generating device - Google Patents

Abstract

The utility model provides an atomization core, an atomizer and an aerosol generating device, wherein in the atomization core structure, a heating element comprises a noble metal layer arranged on a porous matrix, and the noble metal layer forms a first heating layer of the heating element so as to be arranged on the porous matrixA heat generating member including a noble metal layer is formed. Thus, the thickness of the heating element is only controlled to beIn the range of (2), the resistance value of the heating element can be stably controlled within the range of 0.3-2 omega, the purposes of reducing the thickness of the heating element and ensuring the resistance value of the heating element to be within the range of a specified resistance can be achieved, the processing forming time of the heating element can be effectively shortened, and the target material required by processing and forming the heating element is reduced, so that the processing period of the heating element is shorter and the processing production cost is lower. The atomization core provided by the embodiment of the utility model is convenient for carrying out cooperative regulation and control on the thickness and the resistance value of the heating element, and the thickness of the heating element is reduced in a specified resistance range.

Description

Atomizing core, atomizer and aerosol generating device

Technical Field

The utility model belongs to the technical field of atomization, and particularly relates to an atomization core, an atomizer and an aerosol generating device.

Background

In a ceramic atomizing core used in an aerosol generating device, a layer of heating film is usually attached to an atomizing surface of porous ceramic, and an aerosol forming substrate on the atomizing surface is heated by the heating film to atomize the aerosol forming substrate to form an aerosol. Currently, when a heat generating film satisfying the requirements of the specification of the resistance value is formed on a porous ceramic by processing a metal material such as W, it is generally necessary to form a heat generating film having a thickness of 5 to 10 μm on the porous ceramic. Because the thickness of the heating film formed by processing on the porous ceramic is thicker, a series of problems of complex processing technology, higher processing difficulty, longer processing time and more processing consumable materials exist, so that the processing period of the heating film is long and the processing cost is high.

Disclosure of Invention

Based on the above-mentioned problems in the prior art, an object of an embodiment of the present utility model is to provide an atomization core, so as to solve the problems of long processing period and high processing cost caused by processing a heating film on a porous ceramic by using metals such as W and the like in the prior art, and requiring processing to form a heating film with a thicker thickness.

In order to achieve the above purpose, the utility model adopts the following technical scheme: there is provided an atomizing core comprising:

a porous matrix for storing and transporting an aerosol-forming substrate; and

the heating element is used for heating and atomizing the aerosol-forming substrate after being electrified;

wherein the heating element comprises a noble metal layer arranged on the porous matrix, the noble metal layer forms a first heating layer of the heating element, and the thickness of the heating element is thatThe resistance value of the heating element is 0.3-2 omega.

Further, the noble metal layer is an Ag layer with a thickness of

Further, the heating layer further comprises a bonding layer for forming a chemical bond with the porous substrate to bond the noble metal layer to the porous substrate, the bonding layer is arranged on the porous substrate layer by layer, and the noble metal layer is arranged on one surface of the bonding layer away from the porous substrate layer by layer; the bonding layer is a metal layer or an alloy layer, so that the bonding layer can form a second heating layer of the heating element.

Further, the noble metal layer is an Ag layer, the bonding layer is an NiCr alloy layer, and the thickness of the Ag layer isThe thickness of the NiCr alloy layer is +.>

Further, the noble metal layer is an Au layer, the bonding layer is a Ti metal layer, and the thickness of the Au layer isThe thickness of the Ti metal layer is +.>

Further, the atomizing core further comprises an electrode, the electrode is arranged on the noble metal layer, and the electrode is electrically connected with the noble metal layer.

Further, the electrode is a noble metal electrode made of silver, palladium or a silver palladium alloy.

Further, the porous matrix is at least one of porous ceramic, porous glass, porous plastic and porous metal.

Based on the above-mentioned problems in the prior art, it is a second object of an embodiment of the present utility model to provide an atomizer having an atomizing core provided in any of the above-mentioned aspects.

In order to achieve the above purpose, the utility model adopts the following technical scheme: there is provided an atomizer comprising the atomizing core provided in any one of the above aspects.

Based on the above-mentioned problems existing in the prior art, it is a third object of an embodiment of the present utility model to provide an aerosol generating device having an atomizing core or atomizer provided in any of the above-mentioned aspects.

In order to achieve the above purpose, the utility model adopts the following technical scheme: there is provided an aerosol generating device comprising the atomizing core or the atomizer provided in any one of the above aspects.

Compared with the prior art, the one or more technical schemes in the embodiment of the utility model have at least one of the following beneficial effects:

according to the atomization core, the atomizer and the aerosol generating device, in the atomization core structure, the heating element comprises the noble metal layer arranged on the porous substrate, and the noble metal layer forms the first heating layer of the heating element so as to form the heating element comprising the noble metal layer on the porous substrate. Thus, the thickness of the heating element is only controlled to beThe resistance value of the heating element can be stably controlled within the range of 0.3 to 2 omega, the purposes of reducing the thickness of the heating element and ensuring the resistance value of the heating element to be within the range of a specified resistance can be achieved, the processing forming time of the heating element can be effectively shortened, the target material required by processing and forming the heating element is reduced, and the processing period of the heating element is shortenedShorter and lower processing production cost. Therefore, the defects of long processing period and high processing production cost caused by the fact that the heating film is processed and formed on the porous ceramic by adopting metals such as W and the like and the heating film with thicker thickness is needed to be processed and formed in the prior art can be well overcome.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic perspective view of an atomization core according to an embodiment of the present utility model;

FIG. 2 is an exploded view of the atomizing core shown in FIG. 1;

FIG. 3 is a schematic perspective view of an atomizing core according to another embodiment of the present disclosure;

FIG. 4 is an exploded view of the atomizing core shown in FIG. 3;

fig. 5 is a schematic perspective view of a porous substrate according to an embodiment of the present utility model.

Wherein, each reference sign in the figure:

1-a porous matrix; 11-liquid suction level; 12-a liquid storage tank; 13-atomizing surface;

2-heating element; 21-a noble metal layer; 22-a tie layer;

3-electrode.

Detailed Description

In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the utility model is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.

It will be understood that when an element is referred to as being "connected to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present utility model, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. The meaning of "a plurality of" is one or more, unless specifically defined otherwise.

In the description of the present utility model, it should be understood that the terms "center," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.

In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; the mechanical connection and the electrical connection can be adopted; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.

Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment," "in some embodiments," or "in some embodiments" in various places throughout this specification are not all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

Referring to fig. 1 to 5 together, an atomization core according to an embodiment of the present utility model will now be described. The atomizing core provided by the embodiment of the utility model is used for the atomizer, and can generate heat under the electric drive of the power supply device of the aerosol generating device, so that aerosol forming matrixes in the liquid storage cavity of the atomizer are heated and atomized to form aerosol, and the aerosol forming matrixes are atomized to form aerosol for a user to inhale.

Referring to fig. 1, fig. 2 and fig. 5 in combination, an atomizing core according to an embodiment of the present utility model includes a porous substrate 1 and a heat generating element 2, wherein the porous substrate 1 is used for storing and transporting an aerosol-forming substrate, and the heat generating element 2 is used for heating and atomizing the aerosol-forming substrate after being electrified. Specifically, the surface of the porous substrate 1 is formed with an atomizing surface 13 for heating and atomizing the aerosol-forming substrate, and it is understood that the surface of the porous substrate 1 is formed with an atomizing surface means that at least a part of the outer surface of the porous substrate 1 is formed with an atomizing surface, i.e., the outer surface of one side or the outer surfaces of multiple sides of the porous substrate 1 is formed with an atomizing surface 13. It should be noted that the above-mentioned at least part of the outer surface may also refer to a case where the surface of the part of the outer surface on one side of the porous substrate 1 is formed with the atomizing face 13, that is, the area of the atomizing face 13 is smaller than the area of the outer surface on the side. The porous substrate 1 is provided with a liquid absorbing surface 11 on the sea, the liquid absorbing surface 11 is concavely provided with a liquid storage tank 12 capable of storing aerosol forming substrates, micropores with capillary adsorption function are formed in the porous substrate 1 and/or on the surface of the porous substrate 1, the porous substrate 1 can adsorb the aerosol forming substrates through the liquid absorbing surface 11, and the aerosol forming substrates adsorbed and stored by the porous substrate 1 can be continuously transmitted to the atomizing surface 13 or the heating element 2 through the micropores. Due to the arrangement of the liquid storage tank 12, the transmission distance from the aerosol forming substrate to the atomizing surface 13 or the heating element 2 can be shortened, which is favorable for sufficiently and rapidly supplying liquid to the heating element 2 and avoiding dry burning of the heating element 2. The porous substrate 1 may be, but is not limited to, porous ceramics, porous glass, porous plastics, porous fibers, porous metals, or the like. When the porous substrate 1 is a porous ceramic, the porosity of the porous ceramic may be in the range of, but not limited to, 45 to 65%, further 45 to 52.08%, the pore size of micropores of the porous ceramic may be, but not limited to, 25 to 31.33. Mu.m, the specific surface area of the porous ceramic may be, but not limited to, 0.037 to 0.049m2/g, further 0.04 to 0.0433m2/g, the static density of 1.52 to 1.64g/cm3, the specific pore volume of 0.28 to 0.36ml/g, and the median pore size of 15 to 40. Mu.m.

Referring to fig. 1 and 2 in combination, the heat generating element 2 includes a noble metal layer 21 disposed on a porous substrate 1, the noble metal layer 21 forms a first heat generating layer of the heat generating element 2, and the thickness of the heat generating element 2 is 3900 ultra-thinThe resistance value of the heating element 2 is 0.3-2 omega. As can be seen from the resistance calculation formula, the thickness and conductivity of the heat generating element 2 determine the resistance value of the heat generating element 2. When the conductivity of the heating element 2 is fixed, the resistance value is larger when the thickness of the heating element 2 is thinner, and the resistance value is smaller when the thickness of the heating element 2 is thicker, so that the purpose of adjusting the resistance value of the heating element 2 can be achieved by adjusting and controlling the thickness of the heating element 2. Meanwhile, in the research and development process, a large number of experiments show that: when the thickness of the heat generating member 2 is too thick; on the one hand, the forming time of the heating element 2 is longer, thereby greatly reducing the production efficiency; on the other hand, the larger the stress of the heating element 2 is, the microstructure of the heating element 2 is destroyed in the electrifying use process, and the stability of the resistance value of the heating element 2 is affected; on the other hand, the more targets are required for processing the formed heat generating member 2, thereby greatly increasing the production cost. And considering that the potential safety hazard of short circuit overload of the heating element 2 exists when the resistance of the heating element 2 is too low, and the problem that the required heating power cannot be achieved when the resistance of the heating element 2 is too high, the common resistance of the heating element 2 is 0.2-2Ω. Considering the influence of the thickness of the heating element 2 on the stability of the resistance of the heating element 2 and the positive correlation of the thickness of the heating element 2 and the forming time length, and combining the heatingThe usual resistance of the heat-generating element 2 is 0.2 to 2 Ω, and the resistance of the heat-generating element 2 is controlled to be 0.3 to 2 Ω in consideration of the above. At this time, in order to achieve the standard requirement of controlling the resistance value of the heat generating element 2 to be 0.3 to 2 Ω, the first heat generating layer of the heat generating element 2 is formed by using the noble metal layer 21, and since the resistivity of the noble metal is small, only the thickness of the heat generating element 2 needs to be set at +.>The standard requirement of controlling the resistance value of the heating element 2 to be 0.3-2 omega can be met. The thickness of the heat-generating element 2 is set at +.>So that the thickness of the heating element 2 is within a thinner thickness range; on one hand, the forming time of the heating element 2 is shorter, so that the production efficiency is greatly improved; on the other hand, the stress of the heating element 2 is correspondingly reduced, so that the microstructure of the heating element 2 is prevented from being damaged in the process of electrifying and using, and the stability of the resistance value of the heating element 2 is prevented from being influenced; on the other hand, the target material required for processing the formed heating element 2 is correspondingly reduced, so that the production cost is greatly reduced. In the embodiment of the utility model, noble metal is selected as the first heating layer of the heating element 2, and the thickness of the heating element 2 is set at +.>The resistance of the heat generating element 2 can be set within a range of resistance specified by use. Because the thickness of the heating element 2 is greatly reduced, the processing time of the heating element 2 can be effectively shortened, and the materials required for processing the heating element 2 are reduced, so that the processing period of the heating element 2 is short and the processing production cost is low. Therefore, the defects of long processing period and high processing production cost caused by the fact that the heating film is processed on the porous ceramic by adopting metals such as W and the like and the heating film with thicker thickness is needed to be processed in the prior art are well overcome.

Compared with the prior art, in the preparation method of the atomizing core provided by the embodiment of the utility model, in the atomizing core structure, the heating element 2 comprises the noble metal layer 21 arranged on the porous matrix 1, and the noble metal layer 21 forms the first emission of the heating element 2A thermal layer to form a heat generating member 2 including a noble metal layer 21 on a porous substrate 1. Thus, the thickness of the heat generating element 2 is controlled to be onlyThe resistance value of the heating element 2 can be stably controlled within the range of 0.3-2Ω, the purposes of reducing the thickness of the heating element 2 and ensuring the resistance value of the heating element 2 to be within the range of the specified resistance can be achieved, the processing forming time of the heating element 2 can be effectively shortened, the target material required for processing and forming the heating element 2 is reduced, and therefore the processing period of the heating element 2 is shorter and the processing production cost is lower. Therefore, the defects of long processing period and high processing production cost caused by the fact that the heating film is processed and formed on the porous ceramic by adopting metals such as W and the like and the heating film with thicker thickness is needed to be processed and formed in the prior art can be well overcome.

In some of these embodiments, the noble metal layer 21 is an Ag layer having a thickness of In this embodiment, a noble metal Ag material having a smaller conductivity is used, and the thickness of the heat-generating member 2 is set to +.>The resistance of the heating element 2 can be in a specified resistance range, which is beneficial to shortening the processing period of the heating element 2 and reducing the processing production cost of the heating element 2. It should be noted that the thickness of the Ag layer is greater than +.>The resistance value of the heating element 2 is less than 0.3Ω and the thickness of the Ag layer is less than +.>When the resistance value of the heating element 2 is larger than 2Ω, the resistance of the heating element 2 cannot be set within the range of the predetermined resistanceThe resulting heat generating member 2 is not capable of performing the function of heating the atomized aerosol-forming substrate.

Referring to fig. 3 and 4 in combination, in some embodiments, the heat generating layer further includes a bonding layer 22 for bonding the noble metal layer 21 to the porous substrate 1, the bonding layer 22 is stacked on the porous substrate 1, the noble metal layer 21 is stacked on a surface of the bonding layer 22 facing away from the porous substrate 1, and the bonding layer 22 may form chemical bonds with the porous substrate 1 and the noble metal layer 21, respectively, so as to enhance the bonding stability of the noble metal layer 21 to the porous substrate 1. The bonding layer 22 is a metal layer or an alloy layer so that the bonding layer 22 may constitute a second heat generating layer of the heat generating member 2, and examples of materials for forming the metal layer or the alloy layer include metal elements such as Ti, cr, ni, and the like, and alloys thereof. It is understood that materials that can allow the bonding layer 22 to form chemical bonds with the porous substrate 1 and the noble metal layer 21, respectively, may be used as the bonding layer 22. The bonding layer 22 may form chemical bonds with the porous substrate 1 and the noble metal layer 21, respectively, and may be at least one of, but not limited to, a metal bond, a covalent bond, and an ionic bond.

In some of these embodiments, the noble metal layer 21 is an Ag layer, the bonding layer 22 is a NiCr alloy layer, and the Ag layer has a thickness ofThe thickness of the NiCr alloy layer is +.>In this embodiment, a NiCr alloy layer is used as the bonding layer 22, and the NiCr alloy layer is made to have a thickness +.>The stability of the Ag layer bonded to the porous substrate 1 can be enhanced. It should be noted that the thickness of the NiCr alloy layer is less than +.>When the bonding force of the NiCr alloy layer to the Ag layer is poor, the Ag layer is easy to separate. The thickness of the NiCr alloy layer is greater than +.>In this case, the bonding force of the NiCr alloy layer to the Ag layer can be further improved, but the thickness reduction of the heat generating element 2 is not facilitated. Therefore, the thickness of the NiCr alloy layer is defined asIn this embodiment, the noble metal Ag material with smaller conductivity is used, and the thickness of the noble metal Ag layer is only required to be set atThe resistance of the heating element 2 can be in the range of the specified resistance, which is beneficial to further shortening the processing period of the heating element 2 and reducing the processing production cost of the heating element 2. It should be noted that when the thickness of the Ag layer is greater thanThe resistance value of the heating element 2 is less than 0.3Ω and the thickness of the Ag layer is less than +.>When the resistance value of the heating element 2 is greater than 2Ω, the resistance of the heating element 2 cannot be within the range of the specified resistance, so that the heating element 2 cannot realize the function of heating the atomized aerosol-forming substrate.

In some of these embodiments, the noble metal layer 21 is an Au layer, the bonding layer 22 is a Ti metal layer, and the Au layer has a thickness ofThe thickness of the Ti metal layer is +.>In this embodiment, a Ti metal layer is used as the bonding layer 22, and the thickness of the Ti metal layer is +.>Not only can enhance the bonding of the Au layer to the porousThe robustness on the substrate 1 also enables further thinning of the thickness of the bonding layer 22. It should be noted that the thickness of the Ti metal layer is less than +.>In this case, the bonding force of the Ti metal layer to the Au layer is poor, and delamination and detachment of the Au layer are likely to occur. The thickness of the Ti metal layer is greater than +.>In this case, the bonding force of the Ti metal layer to the Au layer can be further improved, but the thickness reduction of the heat generating element 2 is not favored. Therefore, the thickness of the Ti metal layer is defined asIn this embodiment, the noble metal Au material with smaller conductivity is used, and the thickness of the noble metal Au layer is only required to be set atThe resistance of the heating element 2 can be in the range of the specified resistance, which is beneficial to further shortening the processing period of the heating element 2 and reducing the processing production cost of the heating element 2. It should be noted that the thickness of the Au layer is greater than +.>The resistance value of the heat-generating element 2 is less than 0.3Ω at the time, and the thickness of the Au layer is less than +.>When the resistance value of the heating element 2 is greater than 2Ω, the resistance of the heating element 2 cannot be within the range of the specified resistance, so that the heating element 2 cannot realize the function of heating the atomized aerosol-forming substrate.

Referring to fig. 1, fig. 2, and fig. 4 in combination, in some embodiments, the atomizing core further includes an electrode 3 for electrically connecting the lead wire or the conductive spring pin, the electrode 3 is disposed on the porous substrate 1 or the noble metal layer 21 of the heat generating element 2, and the electrode 3 is electrically connected to the noble metal layer 21, so that the noble metal layer 21 of the heat generating element 2 can be electrically connected to the power supply device through the electrode 3 to supply power to the noble metal layer 21 of the heat generating element 2 through the power supply device. It should be noted that the electrodes 3 are arranged in pairs, and the electrodes 3 may be, but are not limited to, noble metal electrodes made of noble metal materials such as silver, palladium, or silver-palladium alloy. The noble metal electrode may be a noble metal electrode layer formed on the noble metal layer 21 of the heat generating member 2 by a magnetron sputtering process, so that the noble metal electrode and the noble metal layer 21 form a chemical bond, and the bonding firmness of the noble metal electrode and the noble metal layer 21 is enhanced.

The embodiment of the utility model also provides an atomizer, which comprises the atomizing core provided by any embodiment. The atomizer has the same technical effects as the atomization core because the atomizer has all the technical characteristics of the atomization core provided by any one of the embodiments.

The embodiment of the utility model also provides an aerosol generating device, which comprises the atomizing core provided by any embodiment or the atomizer provided by any embodiment. The aerosol generating device has the same technical effects as the atomizing core because the aerosol generating device has all the technical characteristics of the atomizing core or the atomizer provided by any one of the embodiments.

The atomization core provided by the embodiment of the utility model is prepared by the following preparation method of the atomization core, and the preparation method of the atomization core comprises the following steps:

step S01: the porous substrate 1 was placed in a magnetron sputtering machine and preheated under vacuum.

Step S02: a noble metal layer 21 is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of the magnetron sputtering is 50-150W, the total sputtering time of the magnetron sputtering is 54-106 minutes, the sputtering temperature of the magnetron sputtering is 25-28 ℃, and the sputtering pressure of the magnetron sputtering is 2-3 mt.

Alternatively, the embodiment of the present utility model further provides a method for preparing an atomization core according to any one of the above embodiments, which includes the following steps:

step S01: the porous substrate 1 was placed in a magnetron sputtering machine and preheated under vacuum.

Step S02: through the magnetron sputtering process, a bonding layer 22 is deposited on the porous substrate 1, the bonding layer 22 is a metal layer or an alloy layer, and the bonding layer 22 forms a chemical bond with the porous substrate 1. Wherein the sputtering power of the magnetron sputtering is 50-150W, the total sputtering time of the magnetron sputtering is 40-106 minutes, the sputtering temperature of the magnetron sputtering is 25-28 ℃, and the sputtering pressure of the magnetron sputtering is 2-3 mt.

Step S03: the noble metal layer 21 is deposited on the bonding layer 22 by a magnetron sputtering process, and the noble metal layer 21 forms a chemical bond with the bonding layer 22. Wherein the sputtering power of the magnetron sputtering is 50-150W, the total sputtering time of the magnetron sputtering is 54-106 minutes, the sputtering temperature of the magnetron sputtering is 25-28 ℃, and the sputtering pressure of the magnetron sputtering is 2-3 mt.

The preparation method of the atomization core of the embodiment of the utility model adopts a magnetron sputtering process in a film physical phase deposition process to magnetron sputter a noble metal target material on a porous substrate 1 to form a heating element 2 comprising a noble metal layer 21 on the porous substrate 1, so that the resistance value of the heating element 2 can be controlled within the range of 0.3-2 omega, and the thickness of the heating element 2 can be controlled within the range ofIn the range of (2), the thickness of the heating element 2 can be greatly reduced, the processing time of the heating element 2 can be effectively shortened, and the target material required by processing the heating element 2 is reduced, so that the processing period of the heating element 2 is shorter and the processing production cost is lower. Therefore, the defects of long processing period and high processing production cost caused by the fact that the heating film is processed on the porous ceramic by adopting metals such as W and the like and the heating film with thicker thickness is needed to be processed in the prior art are well overcome. In addition, the preparation method of the atomization core in the embodiment of the utility model adopts the magnetron sputtering process in the film physical phase deposition process to magnetron sputter the noble metal target material on the porous substrate 1 so as to form the heating element 2 comprising the noble metal layer 21 on the porous substrate 1, thereby being convenient for carrying out cooperative regulation and control on the thickness and the resistance value of the heating element 2, and being provided withOn the basis of effectively reducing the thickness of the heating element 2, the resistance of the heating element 2 is in a specified resistance range, and the heating atomizing effect is good.

In order that the above-described implementation details and operation of the present utility model may be clearly understood by those skilled in the art, the method of preparing an atomizing core according to the present utility model is illustrated by way of example below.

Example 1

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; an Ag layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 50W, the total sputtering time of the magnetron sputtering is 80 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Example 2

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; an Ag layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 55W, the total sputtering time of the magnetron sputtering is 93 minutes, the sputtering temperature of the magnetron sputtering is 27 ℃, and the sputtering pressure of the magnetron sputtering is 2.5mt.

Example 3

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; an Ag layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 60W, the total sputtering time of the magnetron sputtering is 106 minutes, the sputtering temperature of the magnetron sputtering is 28 ℃, and the sputtering pressure of the magnetron sputtering is 2mt.

Example 4

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; through the magnetron sputtering process, a NiCr layer is deposited on the porous substrate 1, the sputtering power of the magnetron sputtering is 60W, the total sputtering time of the magnetron sputtering is 30 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

And depositing an Ag layer on the NiCr layer, wherein the sputtering power of the magnetron sputtering is 40W, the total sputtering time of the magnetron sputtering is 36 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Example 5

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; through the magnetron sputtering process, a NiCr layer is deposited on the porous substrate 1, the sputtering power of the magnetron sputtering is 80W, the total sputtering time of the magnetron sputtering is 36 minutes, the sputtering temperature of the magnetron sputtering is 27 ℃, and the sputtering pressure of the magnetron sputtering is 2.5mt.

And depositing an Ag layer on the NiCr layer, wherein the sputtering power of the magnetron sputtering is 50W, the total sputtering time of the magnetron sputtering is 40 minutes, the sputtering temperature of the magnetron sputtering is 27 ℃, and the sputtering pressure of the magnetron sputtering is 2.5mt.

Example 6

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; through the magnetron sputtering process, a NiCr layer is deposited on the porous substrate 1, the sputtering power of the magnetron sputtering is 100W, the total sputtering time of the magnetron sputtering is 39 minutes, the sputtering temperature of the magnetron sputtering is 28 ℃, and the sputtering pressure of the magnetron sputtering is 2mt.

An Ag layer is deposited on the NiCr layer, the sputtering power of the magnetron sputtering is 60W, the total sputtering time of the magnetron sputtering is 43 minutes, the sputtering temperature of the magnetron sputtering is 28 ℃, and the sputtering pressure of the magnetron sputtering is 2mt.

Example 7

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; through the magnetron sputtering process, a Ti layer is deposited on the porous substrate 1, the sputtering power of the magnetron sputtering is 100W, the total sputtering time of the magnetron sputtering is 20 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

And depositing an Ag layer on the NiCr layer, wherein the sputtering power of the magnetron sputtering is 40W, the total sputtering time of the magnetron sputtering is 20 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Example 8

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; through the magnetron sputtering process, a Ti layer is deposited on the porous substrate 1, the sputtering power of the magnetron sputtering is 130W, the total sputtering time of the magnetron sputtering is 23 minutes, the sputtering temperature of the magnetron sputtering is 27 ℃, and the sputtering pressure of the magnetron sputtering is 2.5mt.

And depositing an Ag layer on the NiCr layer, wherein the sputtering power of the magnetron sputtering is 45W, the total sputtering time of the magnetron sputtering is 25 minutes, the sputtering temperature of the magnetron sputtering is 27 ℃, and the sputtering pressure of the magnetron sputtering is 2.5mt.

Example 9

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; through the magnetron sputtering process, a Ti layer is deposited on the porous substrate 1, the sputtering power of the magnetron sputtering is 150W, the total sputtering time of the magnetron sputtering is 26 minutes, the sputtering temperature of the magnetron sputtering is 28 ℃, and the sputtering pressure of the magnetron sputtering is 2mt.

And depositing an Ag layer on the NiCr layer, wherein the sputtering power of the magnetron sputtering is 50W, the total sputtering time of the magnetron sputtering is 28 minutes, the sputtering temperature of the magnetron sputtering is 28 ℃, and the sputtering pressure of the magnetron sputtering is 2mt.

Comparative example 1

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of the magnetron sputtering is 250W, the total sputtering time of the magnetron sputtering is 250 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 2

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 300W, the total sputtering time of the magnetron sputtering is 300 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 3

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 400W, the total sputtering time of the magnetron sputtering is 350 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 4

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of the magnetron sputtering is 250W, the total sputtering time of the magnetron sputtering is 250 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 5

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 300W, the total sputtering time of the magnetron sputtering is 300 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 6

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 400W, the total sputtering time of the magnetron sputtering is 350 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 7

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a TiW layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of the magnetron sputtering is 250W, the total sputtering time of the magnetron sputtering is 250 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 8

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a TiW layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 300W, the total sputtering time of the magnetron sputtering is 300 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 9

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a TiW layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 400W, the total sputtering time of the magnetron sputtering is 350 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 10

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a layer of NiCr is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of the magnetron sputtering is 250W, the total sputtering time of the magnetron sputtering is 250 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 11

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a layer of NiCr is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 300W, the total sputtering time of the magnetron sputtering is 300 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Comparative example 12

Placing the porous matrix 1 into a magnetron sputtering machine, and preheating under vacuum condition; a layer of NiCr is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein, the sputtering power of the magnetron sputtering is 400W, the total sputtering time of the magnetron sputtering is 350 minutes, the sputtering temperature of the magnetron sputtering is 25 ℃, and the sputtering pressure of the magnetron sputtering is 3mt.

Atomization core related performance test:

the heat generating members 2 in the above examples 1 to 9 and comparative examples 1 to 12 were subjected to tests of resistance value and thickness, respectively. The application examples and the comparative examples are all coated on porous ceramics, and resistance values of the coated porous ceramics are tested by adopting a universal meter. In the process of testing the resistance value, a standard sample with the common resistance value of the heating element 2 is adopted for comparison, and the resistance value of the standard sample is 0.2-2 omega. The relevant test data are shown in table 1.

Table 1 test data table of heat generating members in examples 1 to 9 and comparative examples 1 to 12

As is clear from Table 1, the heat-generating element 2 in examples 1 to 9 has a resistance value of 0.3 to 2Ω and a thickness ofWhile the resistance value of the heat-generating element 2 in comparative examples 4 to 12 was 2.4 to 14Ω and the thickness wasThe heat generating element 2 was formed by coating a porous ceramic, and the heat generating element 2 of examples 1 to 9 had the advantage of being thinner than the heat generating element 2 of comparative examples 4 to 12, and the resistance value was in accordance with the conventional resistance value range requirement, while the heat generating element 2 of comparative examples 4 to 12 was relatively thicker, and the resistance value was not in accordance with the conventional resistance value range requirement.

The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the utility model.

Claims (10)

1. An atomizing core, comprising:

a porous matrix for storing and transporting an aerosol-forming substrate; and

the heating element is used for heating and atomizing the aerosol-forming substrate after being electrified;

wherein the heating element comprises a noble metal layer arranged on the porous matrix, the noble metal layer forms a first heating layer of the heating element, and the thickness of the heating element is thatThe resistance value of the heating element is 0.3-2 omega.

2. The atomizing core of claim 1, wherein the noble metal layer is an Ag layer having a thickness of

3. The atomizing core of claim 1, wherein the heat generating layer further comprises a bonding layer for forming a chemical bond with the porous substrate to bond the noble metal layer to the porous substrate, the bonding layer being disposed layer upon layer on the porous substrate, the noble metal layer being disposed layer upon layer on a side of the bonding layer facing away from the porous substrate; the bonding layer is a metal layer or an alloy layer, so that the bonding layer can form a second heating layer of the heating element.

4. The atomizing core of claim 3, wherein the noble metal layer is an Ag layer, the bonding layer is a NiCr alloy layer, and the Ag layer has a thickness ofThe thickness of the NiCr alloy layer is +.>

5. The atomizing core of claim 3, wherein the noble metal layer is an Au layer, the bonding layer is a Ti metal layer, and the Au layer has a thickness ofThe thickness of the Ti metal layer is +.>

6. The atomizing core of claim 1 or 2, further comprising an electrode disposed on the noble metal layer, the electrode being electrically connected to the noble metal layer.

7. The atomizing core of claim 6, wherein the electrode is a noble metal electrode made of silver, palladium, or a silver palladium alloy.

8. An atomising core according to claim 1 or 2 wherein the porous matrix is a porous ceramic, porous glass, porous plastic or porous metal.

9. An atomizer comprising an atomizing core as claimed in any one of claims 1 to 8.

10. An aerosol generating device comprising an atomizing core according to any one of claims 1 to 8 or an atomizer according to claim 9.