CN218584202U - Wafer temperature detection device of integrative IGBT module in converter - Google Patents
Wafer temperature detection device of integrative IGBT module in converter Download PDFInfo
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Abstract
The utility model discloses a wafer temperature detection device of an integrated IGBT module in a frequency converter, wherein the integrated IGBT module comprises a module shell, a module heat-conducting insulating substrate arranged on the module shell and a plurality of IGBT wafers integrated on the module heat-conducting insulating substrate; the temperature detection device comprises a temperature detection circuit, a detection mounting plate and a plurality of temperature sensors, wherein the detection mounting plate is mounted on a module shell, and the detection mounting plate and a module heat conduction insulating substrate are oppositely arranged; each temperature sensor is respectively arranged on the detection mounting plate, each temperature sensor is respectively connected with each IGBT wafer in a one-to-one correspondence manner, and each IGBT wafer is respectively positioned in the detection range of the corresponding temperature sensor; the acquisition end of each temperature sensor is respectively and electrically connected with the signal input end of the temperature detection circuit. The utility model discloses carry out temperature detection to every IGBT wafer, ensured the temperature detection precision of every IGBT wafer, ensured the reliability of converter.
Description
Technical Field
The utility model relates to a converter technical field, more specifically say and relate to a wafer temperature-detecting device of integrative IGBT module in converter.
Background
With the development of power module technology and technology in the frequency converter, the IGBT module gradually develops from a discrete large volume to a single integrated module Package (PIM) mode, which greatly reduces the volume of the frequency converter, however, when the IGBT module is converted from the discrete IGBT module to the single IGBT module, the positions of each internal wafer in the IGBT module are more concentrated. At present, as shown in fig. 1-2, when electrical safety problems such as strong current and weak current are considered, a thermistor is generally installed on an integrated IGBT module, the thermistor is used for detecting the overall temperature of the integrated IGBT module, and an installation area is generally distributed at the edge position of the integrated IGBT module, as shown in fig. 2, the installation position area 1 and the installation position area 2 are provided, because the thermistor is located at the edge position of the integrated IGBT module, the temperature detection precision of a part of a wafer far away from the thermistor is poor, and the real-time temperature of the wafer cannot be reflected at all in severe cases, thereby affecting the reliability of the frequency converter.
In view of the above, the present application has made intensive studies and resulted in the present invention.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a wafer temperature-detecting device of integrative IGBT module in converter, it can carry out the temperature to every wafer of integrative IGBT module inside and detect, and the temperature detects the precision height, has guaranteed the reliability of converter.
In order to achieve the above purpose, the utility model discloses a solution is:
a wafer temperature detection device for an integrated IGBT module in a frequency converter comprises a module shell, a module heat conduction and insulation substrate and a plurality of IGBT wafers, wherein the module heat conduction and insulation substrate is installed on the module shell, and the plurality of IGBT wafers are integrated on the module heat conduction and insulation substrate; the temperature detection device comprises a temperature detection circuit, a detection mounting plate and a plurality of temperature sensors, wherein the detection mounting plate is mounted on the module shell, and the detection mounting plate and the module heat conduction insulating substrate are oppositely arranged; the temperature sensors are respectively installed on the detection installation plate, the temperature sensors are respectively and correspondingly electrically connected with the IGBT wafers one by one, and the IGBT wafers are respectively positioned in the detection range of the corresponding temperature sensors; the acquisition end of each temperature sensor is respectively and electrically connected with the signal input end of the temperature detection circuit, and is used for respectively transmitting the temperature signals of the IGBT wafer acquired by each temperature sensor to the corresponding temperature detection circuit.
Each temperature sensor is a thermopile temperature sensor.
The size of each temperature sensor is matched with the size of the corresponding IGBT wafer.
The module heat conduction insulating substrate and the detection mounting plate are mutually opposite, one side is taken as a matching side, the temperature sensors are respectively positioned on the matching side of the detection mounting plate, the IGBT wafers are respectively positioned on the matching side of the module heat conduction insulating substrate, and a dustproof heat conduction layer is arranged at the position of the module shell corresponding to the matching side of the module heat conduction insulating substrate.
The temperature detection circuit comprises an MCU, a multi-channel analog switch and a plurality of temperature detection processing units, and each temperature detection processing unit is correspondingly connected with each temperature sensor one by one and used for transmitting a temperature signal of the corresponding IGBT wafer detected by each temperature sensor to the corresponding temperature detection processing unit; the output end of each temperature detection processing unit is respectively and electrically connected with the input port of the multi-channel analog switch and is used for summarizing the amplified voltage signals processed by each temperature detection processing unit through the multi-channel analog switch; and a Zn port of the multi-channel analog switch is electrically connected with an AD port of the MCU and used for transmitting each path of amplified voltage signals from the Zn port to the AD port of the MCU in different time so as to realize the temperature acquisition of each IGBT wafer.
Each temperature detection processing unit comprises an in-phase operational amplifier U1 and a plurality of resistors; in each temperature detection processing unit, the inverting terminal of the in-phase operational amplifier U1 is divided into two paths, one path is connected with a reference voltage VREF through a resistor R1, and the other path is connected with the output terminal of the in-phase operational amplifier U1 through a resistor R2; the in-phase end of the in-phase operational amplifier U1 is connected with the first end of the temperature sensor through a resistor R3, and the output end of the in-phase operational amplifier U1 is also connected with the input port of the multi-channel analog switch; the second end of the temperature sensor is connected with a power supply voltage VCC through a resistor R4, the third end of the temperature sensor is connected with the reference voltage VREF, and the fourth end of the temperature sensor is grounded.
And a channel selector is arranged in the multi-channel analog switch.
The MCU is provided with D1, D2, D3, D4 and D5 ports, and each output port of the channel selector is electrically connected with the D1, D2, D3, D4 and D5 ports of the MCU in a one-to-one correspondence manner.
After the structure is adopted, the utility model discloses following beneficial effect has: by adopting the arrangement of the utility model, each IGBT wafer is respectively positioned in the detection range of the corresponding temperature sensor, so as to carry out point-to-point temperature detection on each IGBT wafer in the integrated IGBT module, realize the detection of the temperature of each IGBT wafer and carry out corresponding operation in time; compared with the prior art, the utility model discloses carry out temperature detection to every IGBT wafer, ensured the temperature detection precision of every IGBT wafer, avoid not in time discovering IGBT wafer temperature and the condition that leads to the wafer to damage takes place, ensured the reliability of converter.
Drawings
Fig. 1 is a schematic circuit diagram of the interior of an integrated IGBT module in a conventional frequency converter;
FIG. 2 is a layout diagram of IGBT wafers inside a conventional IGBT module in a conventional frequency converter;
fig. 3 is a layout diagram of the temperature sensors in the wafer temperature detecting apparatus of the present invention;
fig. 4 is a schematic structural diagram of a temperature sensor in the wafer temperature detecting apparatus of the present invention;
fig. 5 is a schematic circuit diagram of the temperature detection circuit in the wafer temperature detection apparatus of the present invention.
In the figure:
1 a-a module housing; 11 a-dustproof heat conducting layer;
2 a-a module thermally conductive insulating substrate; 3 a-an IGBT wafer;
1-detecting a mounting plate; 11-mounting hole II;
2-temperature sensor.
Detailed Description
In order to further explain the technical solution of the present invention, the present invention is explained in detail by the following embodiments.
A wafer temperature detection device of an integrated IGBT module in a frequency converter is suitable for the integrated IGBT module in a conventional frequency converter, and is best suitable for the conventional medium and high power frequency converter, as shown in figures 3-5. The integrated IGBT module comprises a module shell 1a, a module heat-conducting insulating substrate 2a and a plurality of IGBT wafers 3a, wherein the module heat-conducting substrate 2a is arranged on the module shell 1a, and each IGBT wafer 3a is respectively integrated on the module heat-conducting insulating substrate 2a in a conventional mode; the module housing 1a, the module thermally conductive insulating substrate 2a and each IGBT wafer 3a are conventional components of an integrated IGBT module, and therefore, description thereof is omitted.
The utility model discloses a temperature detection circuit, detect mounting panel 1 and a plurality of temperature sensor 2, detect mounting panel 1 fixed mounting on module shell 1a, and detect mounting panel 1 and module heat conduction insulating substrate 2a mutual disposition, each temperature sensor 2 is installed respectively on detecting mounting panel 1, and each temperature sensor 2 and each IGBT wafer 3a respectively one-to-one, each IGBT wafer 3a is arranged in the temperature sensor 2's that corresponds detection range respectively, and, the signal input part of temperature detection circuit is connected to each temperature sensor 2's collection end electricity respectively, in the temperature detection circuit that is used for transmitting the temperature signal of the IGBT wafer that each temperature sensor gathered respectively to the temperature that corresponds respectively.
Specifically, the side of the module heat conducting and insulating substrate 2a facing the detection mounting board 1 is defined as a matching side, the temperature sensors 2 are respectively located on the matching side of the detection mounting board 1, the IGBT wafers are respectively located on the matching side of the module heat conducting and insulating substrate 2a, and the temperature sensors 2 and the IGBT wafers 3a are respectively aligned one by one so that the temperature sensors 2 respectively detect the temperatures of the IGBT wafers 3a that are aligned with each other. Preferably, the module housing 1a is provided with a dustproof heat conduction layer 11a corresponding to the matching side of the module heat conduction insulating substrate 2a, and each IGBT wafer is embedded in the dustproof heat conduction layer 11a to transfer heat to the matching side of the detection mounting plate 1 through the dustproof heat conduction layer 11a, so that each temperature sensor 2 is facilitated to detect the temperature of the corresponding IGBT wafer 3a remaining in the module housing 1a, the detection precision is improved, and meanwhile, the dustproof effect is exerted on each IGBT wafer 3 a.
In the present embodiment, the above-mentioned dustproof heat conduction layer 11a is formed by spreading a conventional potting adhesive on the mating side of the module housing 1a corresponding to the module heat conduction insulating substrate 2a to form the dustproof heat conduction layer 11a.
Further, each of the temperature sensors 2 is a thermopile temperature sensor, and is configured to detect the temperature of the corresponding IGBT wafer 3a, where the size of each temperature sensor 2 is adapted to the size of each IGBT wafer 3a, so as to ensure the volume of the integrated IGBT module; in the present embodiment, each temperature sensor 2 is a conventional temperature sensor, such as a type MTP10-B7F55 thermopile temperature sensor.
Furthermore, the mounting structure of the detection mounting plate 1 mounted on the module housing 1a is an existing conventional structure, for example, mounting holes i are respectively formed in two sides of the module housing 1a, mounting holes ii 11 are respectively formed in positions of the detection mounting plate 1 corresponding to the mounting holes i, and mounting screws are respectively inserted into each of the mounting holes i and the mounting holes ii 11 corresponding to each other. During installation, the temperature sensors on the detection mounting plate 1 are aligned with the corresponding IGBT wafers 3a respectively, the two mounting holes I are in one-to-one correspondence with the two mounting holes II respectively, and then the two mounting screws are screwed into the corresponding mounting holes I and the mounting holes II 11 respectively in sequence, so that the detection mounting plate 1 can be fixedly installed on the module shell 1a.
The temperature detection circuit comprises an MCU, a multi-channel analog switch and a plurality of temperature detection units, wherein each temperature detection unit is respectively connected with each temperature sensor 2 in a one-to-one correspondence manner, namely the acquisition end of each temperature sensor 2 is respectively and electrically connected with the signal input end of the corresponding temperature detection unit, so that the acquired temperature signals (weak voltage signals) are transmitted to the corresponding temperature detection unit, and amplified voltage signals are obtained through the processing of the corresponding temperature detection unit; the signal output end of each temperature detection unit is respectively and electrically connected with the corresponding input port of the multi-channel analog switch and is used for summarizing each voltage signal through the multi-channel analog switch; the Zn ports of the multi-channel analog switches are respectively and electrically connected with the AD ports of the MCU, and a plurality of channels (namely the output ports of the multi-channel analog switches) of the channel selector in the multi-channel analog switches are respectively and correspondingly connected with the D1, the D2, the D3, the D4 and the D5 of the MCU one by one, so that the temperature detection of at most 32 channels can be obtained according to 5 channels of signal combination in the MCU, the requirement of the types of the integrated IGBT modules produced by different manufacturers can be met, one channel of analog switch is selected through the decoding of the D1-D5 of the MCU, and each channel of voltage signals is successively sent to the AD ports of the MCU from the Zn ports of the MCU at different time intervals, so that the temperature data of all IGBT wafers 3a can be acquired.
Further, the internal circuit of the multi-channel analog switch described above in the present embodiment is provided with a channel selector, and the multi-channel analog switch is an existing conventional analog switch, for example, an analog switch of model number ADG 732.
Further, the MCU in this embodiment is a conventional single chip microcomputer, for example, an MCU of model number TMS320F 28034.
Furthermore, the circuit structures of the temperature detection processing units are the same, so that one of the temperature detection processing units is taken as an example for explanation; the temperature detection processing unit comprises an in-phase operational amplifier U1 and a plurality of resistors; the inverting end of the in-phase operational amplifier U1 is divided into two paths, one path is connected with a reference voltage VREF through a resistor R1, and the other path is connected with the output end of the in-phase operational amplifier U1 through a resistor R2; the in-phase end of the in-phase operational amplifier U1 is connected with the first end of the corresponding temperature sensor 2 through a resistor R3, and the output end of the in-phase operational amplifier U1 is also connected with the corresponding input port of the channel analog switch; the second end of the temperature sensor 2 is connected with a power supply voltage VCC through a resistor R4, the third end of the temperature sensor 2 is connected with a reference voltage VREF, and the fourth end of the temperature sensor 2 is grounded; the output end of each in-phase operational amplifier U1 is also electrically connected with the corresponding input port of the multi-channel analog switch. In the present embodiment, the voltage VREF is an existing conventional reference voltage.
In this embodiment, the in-phase operational amplifier U1 is configured to amplify the weak voltage signal output by the corresponding temperature sensor 2 to a suitable voltage range of the AD port of the MCU through the in-phase operational amplifier U1.
The utility model relates to a wafer temperature-detecting device of integrative IGBT module in converter, concrete theory of operation is: when the frequency converter works, one part of heat of each IGBT wafer 3a in the integrated IGBT module is radiated out through the module heat conducting substrate 2a, the other part of heat of each IGBT wafer 3a is detected by the corresponding temperature sensor 2, each temperature sensor 2 outputs the detected temperature signal (namely, voltage signal) to the corresponding temperature detection processing unit, and each temperature detection processing unit amplifies the weak voltage signal output by the corresponding temperature sensor 2 so as to amplify the weak voltage signal to the proper range of the AD port of the MCU; then, the amplified voltage signals are respectively collected through the multi-channel analog switch, one of the multi-channel analog switches is selected through decoding of D1-D5 ports in the MCU, and the voltage signals are successively sent to an AD port of the MCU from a Zn port of the MCU at different time, so that temperature data of each IGBT wafer 3a can be obtained.
It should be noted that, the D1-D5 ports of the MCU have 5 paths in total, so that the 5 paths of signals can be detected by 32 paths at most, and therefore, the structural requirements of the integrated IGBT modules produced by different manufacturers can be basically met, i.e., the integrated IGBT modules have universality.
The utility model discloses in, adopt multichannel analog switch, the event only needs an AD port, can be in proper order with each voltage signal output to MCU's AD port, because conventional MCU's AD port is all less, consequently can reduce the hardware resources who occupies MCU.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made within the scope of the claims of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
1. A wafer temperature detection device for an integrated IGBT module in a frequency converter comprises a module shell, a module heat conduction and insulation substrate and a plurality of IGBT wafers, wherein the module heat conduction and insulation substrate is installed on the module shell, and the plurality of IGBT wafers are integrated on the module heat conduction and insulation substrate; the method is characterized in that: the temperature detection device comprises a temperature detection circuit, a detection mounting plate and a plurality of temperature sensors, wherein the detection mounting plate is mounted on the module shell, and the detection mounting plate and the module heat conduction insulating substrate are oppositely arranged; the temperature sensors are respectively arranged on the detection mounting plate, the temperature sensors are respectively and correspondingly electrically connected with the IGBT wafers one by one, and the IGBT wafers are respectively positioned in the detection ranges of the corresponding temperature sensors; the collecting end of each temperature sensor is electrically connected with the signal input end of the temperature detection circuit respectively, and the temperature sensors are used for transmitting the temperature signals of the IGBT wafers collected by the temperature sensors to the corresponding temperature detection circuits respectively.
2. The wafer temperature detection device of the integrated IGBT module in the frequency converter according to claim 1, characterized in that: each temperature sensor is a thermopile temperature sensor.
3. The wafer temperature detection device of the integrated IGBT module in the frequency converter according to claim 2, characterized in that: the size of each temperature sensor is matched with the size of the corresponding IGBT wafer.
4. The wafer temperature detection device of the integrated IGBT module in the frequency converter according to claim 1, 2 or 3, characterized in that: the module heat conduction insulating substrate and the detection mounting plate are mutually opposite, one side is taken as a matching side, the temperature sensors are respectively positioned on the matching side of the detection mounting plate, the IGBT wafers are respectively positioned on the matching side of the module heat conduction insulating substrate, and a dustproof heat conduction layer is arranged at the position of the module shell corresponding to the matching side of the module heat conduction insulating substrate.
5. The wafer temperature detection device of the integrated IGBT module in the frequency converter according to claim 4, characterized in that: the temperature detection circuit comprises an MCU, a multi-channel analog switch and a plurality of temperature detection processing units, wherein each temperature detection processing unit is respectively connected with each temperature sensor in a one-to-one correspondence manner and is used for transmitting a temperature signal of the corresponding IGBT wafer detected by each temperature sensor to the corresponding temperature detection processing unit; the output end of each temperature detection processing unit is respectively and electrically connected with the input port of the multi-channel analog switch and is used for summarizing the amplified voltage signals processed by each temperature detection processing unit through the multi-channel analog switch; and a Zn port of the multi-channel analog switch is electrically connected with an AD port of the MCU and used for transmitting each path of amplified voltage signals from the Zn port to the AD port of the MCU in different time so as to realize the temperature acquisition of each IGBT wafer.
6. The wafer temperature detection device of the integrated IGBT module in the frequency converter according to claim 5, characterized in that: each temperature detection processing unit comprises an in-phase operational amplifier U1 and a plurality of resistors; in each temperature detection processing unit, the inverting terminal of the in-phase operational amplifier U1 is divided into two paths, one path is connected with a reference voltage VREF through a resistor R1, and the other path is connected with the output terminal of the in-phase operational amplifier U1 through a resistor R2; the in-phase end of the in-phase operational amplifier U1 is connected with the first end of the temperature sensor through a resistor R3, and the output end of the in-phase operational amplifier U1 is also connected with the input port of the multi-channel analog switch; the second end of the temperature sensor is connected with a power supply voltage VCC through a resistor R4, the third end of the temperature sensor is connected with the reference voltage VREF, and the fourth end of the temperature sensor is grounded.
7. The wafer temperature detection device of the integrated IGBT module in the frequency converter according to claim 6, characterized in that: and a channel selector is arranged in the multi-channel analog switch.
8. The wafer temperature detection device of the integrated IGBT module in the frequency converter according to claim 7, characterized in that: the MCU is provided with D1, D2, D3, D4 and D5 ports, and each output port of the channel selector is electrically connected with the D1, D2, D3, D4 and D5 ports of the MCU in a one-to-one correspondence manner.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119047402A (en) * | 2024-11-01 | 2024-11-29 | 泉州市桑川电气设备有限公司 | Frequency converter IGBT module service life prediction method, system, storage medium and product |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119047402A (en) * | 2024-11-01 | 2024-11-29 | 泉州市桑川电气设备有限公司 | Frequency converter IGBT module service life prediction method, system, storage medium and product |
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