CN217765955U - Device for rapidly testing surface tension of high-temperature single crystal silicon - Google Patents
Device for rapidly testing surface tension of high-temperature single crystal silicon Download PDFInfo
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- CN217765955U CN217765955U CN202221099677.1U CN202221099677U CN217765955U CN 217765955 U CN217765955 U CN 217765955U CN 202221099677 U CN202221099677 U CN 202221099677U CN 217765955 U CN217765955 U CN 217765955U
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 60
- 238000012360 testing method Methods 0.000 title claims abstract description 34
- 238000002844 melting Methods 0.000 claims abstract description 31
- 230000008018 melting Effects 0.000 claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 238000012545 processing Methods 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 22
- 108010083687 Ion Pumps Proteins 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 239000000155 melt Substances 0.000 description 9
- 230000003068 static effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005484 gravity Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 210000003934 vacuole Anatomy 0.000 description 1
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Abstract
The utility model discloses a device for rapidly testing the surface tension of high-temperature monocrystalline silicon, which comprises a tubular heating furnace, a melting auxiliary chamber, an image acquisition module, a computer and an image processing module, wherein the side wall of a furnace tube of the tubular heating furnace is provided with an air inlet and an air outlet, a rotating base is arranged in the furnace tube, and the left side and the right side of the furnace tube are respectively provided with an observation hole; the melting auxiliary chamber is internally provided with a laser used for heating a sample, the melting auxiliary chamber is arranged above the interior of the tubular heating furnace, the bottom of the melting auxiliary chamber is a depressed area and is communicated with the furnace tube through a sample conveying pipeline, the outlet end of the sample conveying pipeline is positioned above the rotating base, the image acquisition module is arranged at the observation hole of the furnace tube and is used for acquiring image information in the furnace tube, and the computer is internally provided with an image processing module which is connected with the image acquisition module. The utility model discloses can accelerate the melting time of object, shorten test time, improve detection efficiency.
Description
Technical Field
The utility model relates to a test surface tension's device specifically is a test high temperature monocrystalline silicon surface tension's device fast belongs to surface tension test technical field.
Background
In 1918, a Czochralski method similar to that for growing single crystal silicon was developed in the 50 s and became the mainstream technique for growing single crystal silicon. The czochralski method (CZ method) is described simply as: polycrystalline silicon is placed in a crucible, heated to melt it, and a seed crystal of the proper crystal orientation is held by a chuck, suspended in the crucible, pulled while being inserted into the melt at one end until it melts, and then slowly pulled upward, whereupon a single crystal is formed by gradual condensation at the liquid-solid interface.
In the growth of single crystal silicon by the Czochralski (CZ) method, which requires precise control of the diameter of the single crystal silicon rod 8, the diameter control system that is presently preferred detects the diameter of the single crystal silicon rod 8 by detecting a change in the shape of the halo region 9 (i.e., the region where the liquid surface is attracted below the single crystal silicon rod 8 by surface tension), the height of the halo region 9 increases as the diameter of the single crystal silicon rod 8 increases, as shown in fig. 4. The balance between the surface tension of the melt and gravity determines the shape of the melt-gas boundary near the crystal, i.e., the shape of the optical ring region, so accurate measurement of the surface tension of the high temperature silicon melt under different conditions (pressure, temperature, atmosphere) is of great importance for better control of the growth of single crystal silicon by the Czochralski method.
Since 1960, after the maximum vacuole method is applied to the liquid surface tension test, a series of surface tension test methods are generated, such as a drop weight method, a drop volume method, a capillary rise method, a static drop method and the like, wherein the static drop method has the advantages of wide application range, high accuracy and good repeatability, and the method has the advantages of simple equipment structure, small sample amount, convenience in operation and the like.
The static dropping method is divided into a hanging dropping method and a sitting dropping method, and the testing principles of the two methods are basically the same: and describing the shape of the naturally formed liquid drop on the plane and the relation between the surface tension of the liquid drop and the surface pressure by using a Young-Laplace equation, and calculating a surface tension value. The difference between the two is in the way the melt is formed. When the static drop method is applied, a sample backing plate is not needed, a suspended molten drop is formed after the sample is melted, the contour of the suspended drop is subjected to curve fitting, and the melt surface tension is calculated. When the sitting drop method is applied, a sample is placed on the base plate, the sample is gradually melted at high temperature and becomes an ellipsoid under the combined action of the surface tension and gravity of the sample, the profile of a molten drop is subjected to curve fitting, and the surface tension of a melt is calculated.
However, when the surface tension of the high-temperature melt surface is tested by the static drop method in the existing surface tension testing device, the defects of low melting speed of the object and long test waiting time exist, and the improvement of the detection efficiency is not facilitated.
Disclosure of Invention
To the problem that above-mentioned prior art exists, the utility model provides a test high temperature monocrystalline silicon surface tension's device fast can accelerate the melting time of object, shortens test time, improves detection efficiency.
To achieve the above object, the utility model relates to a test high temperature monocrystalline silicon surface tension's device fast, include
The device comprises a tubular heating furnace, wherein the side wall of a furnace tube of the tubular heating furnace is respectively provided with an air inlet and an air outlet, a rotating base is arranged in the furnace tube, and the left side and the right side of the furnace tube are respectively provided with an observation hole;
the melting auxiliary chamber is arranged above the interior of the tubular heating furnace, a laser used for heating a sample is installed in the melting auxiliary chamber and used for heating a monocrystalline silicon sample to enable the monocrystalline silicon to melt silicon melt quickly, a concave area is formed in the bottom of the melting auxiliary chamber and used for placing the monocrystalline silicon, the bottom of the melting auxiliary chamber is communicated with the furnace tube through a sample conveying pipeline, and the outlet end of the sample conveying pipeline is located above the rotating base;
the image acquisition module is arranged at the observation hole of the furnace tube and is used for acquiring image information in the furnace tube;
the computer, computer internally mounted has image processing module, the computer respectively with rotating base, the laser instrument with the image acquisition module electricity is connected. The computer is used for controlling the rotation of the rotary base, controlling the opening or closing of the laser, receiving the image information transmitted by the image acquisition module and transmitting the information to the image processing module, and the image processing module calculates the surface tension value of the silicon melt in a high-temperature state according to the received image information and outputs the surface tension value, namely the surface tension of the single crystal silicon;
preferably, the rotating base comprises a base and a magnetic control rotating carrying table, the base is installed at the bottom of the furnace tube, and the magnetic control rotating carrying table is installed on the base and connected with the computer. The computer controls the rotation of the magnetic control rotation carrying platform, the magnetic control rotation carrying platform is used for placing the softened monocrystalline silicon sample, namely the silicon melt, and the rotation speed of the magnetic control rotation carrying platform can be set by the computer to simulate the rotation speed of the crucible in the growth process of the monocrystalline silicon. The magnetic control rotation carrying platform has better high temperature resistance and high rotating speed control precision, and other carrying platforms with rotation functions can be selected according to actual requirements.
Further, the image acquisition module comprises a light source and a CCD camera, the light source and the CCD camera are respectively arranged at observation holes at two ends of the furnace tube through a bracket, the light source emits to the silicon melt on the magnetic control rotating carrying platform and projects the projection of the silicon melt to the CCD camera, and therefore the image acquisition of the CCD camera to the outline of the silicon melt is realized.
Furthermore, the light source is a near-infrared laser light source, which is beneficial for a CCD camera to clearly acquire an outer contour image of the silicon melt.
Further, the device also comprises a gas conveying system for conveying protective gas, wherein the gas conveying system is communicated with the interior of the furnace tube through a gas inlet, and the protective gas is input to effectively prevent the silicon melt from being oxidized, so that the surface tension of the monocrystalline silicon can be more accurately tested. The protective gas is preferably argon.
Further, the furnace tube pressure control device further comprises a pressure control system, wherein the pressure control system is communicated with the interior of the furnace tube through the air outlet hole and used for accurately controlling the pressure in the furnace tube.
Preferably, the pressure control system comprises a vacuum pump and an ion pump, the vacuum pump and the ion pump are both mounted on the furnace tube, and the pressure in the furnace tube is precisely controlled through the vacuum pump and the ion pump.
Compared with the prior art, the utility model has the advantages of it is following:
1) The utility model discloses set up a melting auxiliary chamber inside the tubular heating furnace to at this auxiliary indoor installation laser instrument, monocrystalline silicon melts in melting auxiliary chamber, utilizes the laser instrument to carry out the auxiliary heating to monocrystalline silicon, has accelerated the melting speed of monocrystalline silicon, thereby has realized the surface tension of quick test high temperature monocrystalline silicon, has solved the problem that current device test object surface tension time is of a specified duration effectively.
2) The utility model discloses a test monocrystalline silicon's surface tension under different conditions (atmosphere, pressure and temperature), and according to test result analysis monocrystalline silicon surface tension and atmosphere, the relation of pressure and temperature, so that control monocrystalline silicon's surface tension through the long brilliant temperature of control at the actual crystal growth in-process, thereby controlled the regional shape of light ring of czochralski method growth monocrystalline silicon, and then the change of control monocrystalline silicon growth in-process diameter, so that its diameter of monocrystalline silicon rod at the in-process of growing accords with the technological requirement, the quality of monocrystalline silicon rod has been improved effectively.
3) The utility model discloses simple structure easily makes, is applicable to the test and lightly adulterates, heavily adulterates the test that equal monocrystalline silicon revolves surface tension.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of a section of a borehole wall;
FIG. 3 is a schematic view of the projection of the outer contour of the high-temperature monocrystalline silicon sample onto the image acquisition module;
FIG. 4 is a schematic view of an optical ring region during a crystal growth process;
in the figure: 1-a computer; 2-a CCD camera; 21-a scaffold; 3-a tubular heating furnace; 31-a furnace tube, 32-an observation hole, 33-an inlet hole, 34-an outlet hole, 35-a melting auxiliary chamber, 351-a laser, 352-a sample conveying pipeline, 353-a magnetic control rotating carrier, 353-a base and 4-a gas conveying system; 5-a pressure control system, 6-a light source, 7-a monocrystalline silicon sample, 8-a monocrystalline silicon rod and 9-an optical ring area.
Detailed Description
The present invention will be further explained with reference to the accompanying drawings.
Referring to fig. 1 and 2, the apparatus for rapidly testing surface tension of high-temperature monocrystalline silicon in this embodiment includes a tubular heating furnace 3, a melting auxiliary chamber 35, an image acquisition module, an image processing module and a computer 1;
the side wall of a furnace tube 31 of the tubular heating furnace 3 is respectively provided with an air inlet 32 and an air outlet 34, the air inlet 33 and the air outlet 34 are arranged at the left end and the right end of the side wall of the furnace tube 31, a rotating base is arranged in the furnace tube 31 and is used for simulating the rotation of a crucible in the growth process of monocrystalline silicon; the left side and the right side of the furnace tube 31 are respectively provided with an observation hole 32; the melting auxiliary chamber 35 is disposed above the inside of the tubular heating furnace 3, that is, above the furnace tube 31, the bottom of the melting auxiliary chamber 35 is a recessed region for placing the monocrystalline silicon sample 7, for example, the bottom is a tapered structure or the longitudinal section of the melting auxiliary chamber 35 is a V-shaped structure, the bottom of the melting auxiliary chamber 35 is communicated with the inside of the furnace tube 31 through a sample conveying pipe 352, the outlet end of the sample conveying pipe 352 is located above the rotary base, the melting auxiliary chamber 35 is mounted with lasers 351 for heating the monocrystalline silicon sample 7, the number of the lasers 351 can be set as required, the greater the number of the lasers 351 is, the faster the melting speed of the monocrystalline silicon sample 7 is, although the melting speed of the sample can be rapidly increased by using two or more lasers 351, experiments prove that one laser 351 and two or more lasers 351 are used, the melting speed of the monocrystalline silicon sample 7 is not greatly different, and therefore, in view of cost, it is preferable to mount one laser 351 in the melting auxiliary chamber 35 in the embodiment; the image acquisition module is arranged at the observation hole 32 of the furnace tube 31 through the bracket 21 and is used for acquiring the image information of the outer contour of the silicon melt on the rotating base and transmitting the information to the computer 1. The image processing module is installed in the computer 1, the rotating base, the laser 351 and the image processing module are respectively connected with the computer 1, the computer 1 is used for controlling the rotating speed of the rotating base, controlling the laser 351 to be turned on or turned off, and transmitting the image information transmitted by the image acquisition module to the image processing module, and the image processing module analyzes and processes the received image and outputs the surface tension of the silicon melt.
In some embodiments of the utility model, the rotating base comprises a base 353 and a magnetic control rotating carrying platform 353, the base 353 is installed at the bottom of the furnace tube 31, the magnetic control rotating carrying platform 353 is installed on the base 353 and is connected with the computer 1, the rotation speed of the magnetic control rotating carrying platform 353 is set through the computer 1 to simulate the rotation of a crucible in the growth process of monocrystalline silicon, so that the surface tension of the monocrystalline silicon in the rotating process is tested, and the test result is more referential.
In some embodiments of the present invention, the image capturing module includes a light source 6 and a CCD camera 2, the light source 6 and the CCD camera 2 are respectively disposed at the observation holes 32 at both ends of the furnace tube 31 through the support 21, the light source 6 irradiates the melt on the magnetic control rotation stage 353 through the observation hole 32 at one end of the furnace tube 31, and projects the outer contour image of the melt onto the CCD camera through the observation hole 32 at the other end of the furnace tube 31, see fig. 3.
In some embodiments of the present invention, the light source 6 is a near infrared laser light source, which is beneficial to clearly projecting the outer contour of the silicon melt onto the CCD camera.
In some embodiments of the present invention, the gas conveying system 4 for conveying shielding gas is further included, the gas conveying system 4 is communicated with the interior of the furnace tube 31 through the gas inlet 32, and the shielding gas aims at: effectively avoids the oxidation of the silicon melt in the test process and improves the test accuracy. In some embodiments, the shielding gas is argon, but other shielding gases may be used according to the actual situation.
The utility model discloses an in some embodiments, still include pressure control system 5, pressure control system 5 through venthole 34 with boiler tube 31 intercommunication, in some specific embodiments, pressure control system 5 includes vacuum pump and ion pump, and vacuum pump and ion pump are all installed on boiler tube 31, and the cooperation of vacuum pump and ion pump is used the pressure in the control boiler tube 31 that can be accurate.
The testing method based on the device of the embodiment comprises the following specific steps:
1) Placing the monocrystalline silicon sample 7 in a recessed area at the bottom of the melting auxiliary chamber 35, introducing protective gas (argon) into the furnace tube 31, and simultaneously accurately controlling the pressure in the furnace tube 31 through a vacuum pump and an ion pump in the pressure control system 5;
2) The laser 351 and the light source 6 are controlled to be turned on by the computer 1, meanwhile, the CCD camera collects image information in the furnace tube 31 in real time and transmits the collected image information to an image processing module of the computer 1, the laser 351 carries out auxiliary heating on a monocrystalline silicon sample 7 (hereinafter referred to as a sample), thereby accelerating the melting speed of the sample, and the sample reaches the magnetic control rotating carrying platform 353 along the sample conveying pipeline 352 after being melted into a silicon melt;
3) When a worker sees the outline of the silicon melt appearing for the first time in the image processing module, the temperature of the tubular heating furnace 3 can be raised, the tubular heating furnace 3 is heated at the heating rate of 10-50 ℃/min from the heat preservation temperature of 1100 ℃, the silicon melt is in an oval sphere shape under the combined action of the surface tension and gravity of the silicon melt along with the temperature rise, the outline of the oval sphere silicon melt is projected onto a CCD camera (see figure 3) under the irradiation of a light source 6, and the oval sphere silicon melt is transmitted to the image processing module in the computer 1 by the CCD camera; and the image processing module identifies the outer contour image of the silicon melt, marks the outer contour coordinates, automatically performs fitting, and finally calculates the surface tension of the silicon melt through a Laplace-Young equation so as to obtain the surface tension of the single crystal silicon.
In order to further know the surface tension of the monocrystalline silicon under the conditions of different atmospheres, pressures and temperatures, a tester can perform a plurality of experiments by adopting the testing method, and each test adopts different atmospheres (including the types and flow rates of gases) and pressures, so that the relation between the surface tension of the monocrystalline silicon and the pressure, the atmosphere and the temperature is analyzed along with the temperature change of the silicon melt under different pressures and atmospheres in the rotation process, the shape of the optical ring zone 9 is controlled by controlling the temperature, the pressure and the atmosphere in the crystal growing furnace in the actual crystal pulling process, the diameter change in the growth process of the monocrystalline silicon is further controlled, the diameter of the monocrystalline silicon is enabled to always meet the process requirements in the crystal pulling process, and the quality of the monocrystalline silicon rod 8 is effectively improved.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "above," and "over" a second feature may be directly on or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description of the present specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (8)
1. A device for rapidly testing the surface tension of high-temperature monocrystalline silicon is characterized by comprising
The side wall of a furnace tube of the tubular heating furnace is respectively provided with an air inlet and an air outlet, a rotating base is arranged in the furnace tube, and the left side and the right side of the furnace tube are respectively provided with an observation hole;
a melting auxiliary chamber in which a laser for heating a sample is installed; the melting auxiliary chamber is arranged above the interior of the tubular heating furnace, the bottom of the melting auxiliary chamber is a concave area for placing monocrystalline silicon, the bottom of the melting auxiliary chamber is communicated with the furnace tube through a sample conveying pipeline, and the outlet end of the sample conveying pipeline is positioned above the rotating base;
the image acquisition module is arranged at the observation hole of the furnace tube and is used for acquiring image information in the furnace tube;
the computer, computer internally mounted has image processing module, the computer respectively with rotating base, the laser instrument with the image acquisition module electricity is connected.
2. The device for rapidly testing the surface tension of high-temperature monocrystalline silicon according to claim 1, wherein the rotating base comprises a base and a magnetic control rotating carrying platform, the base is arranged at the bottom of the furnace tube, and the magnetic control rotating carrying platform is arranged on the base and is connected with the computer.
3. The device for rapidly testing the surface tension of the high-temperature monocrystalline silicon as claimed in claim 1, wherein the image acquisition module comprises a light source and a CCD camera, and the light source and the CCD camera are respectively arranged at observation holes at two ends of the furnace tube through a bracket.
4. The device for rapidly testing the surface tension of high-temperature monocrystalline silicon as claimed in claim 3, wherein the light source is a near-infrared laser light source.
5. The device for rapidly testing the surface tension of the high-temperature monocrystalline silicon as claimed in claim 1 or 2, further comprising a gas conveying system for conveying protective gas, wherein the gas conveying system is communicated with the furnace tube through the gas inlet hole.
6. The device for rapidly testing the surface tension of high-temperature monocrystalline silicon as claimed in claim 5, wherein the protective gas is argon.
7. The device for rapidly testing the surface tension of the high-temperature monocrystalline silicon as claimed in claim 1 or 2, further comprising a pressure control system, wherein the pressure control system is communicated with the furnace tube through the air outlet.
8. The apparatus of claim 7, wherein the pressure control system comprises a vacuum pump and an ion pump, and the vacuum pump and the ion pump are both mounted on the furnace tube.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202221099677.1U CN217765955U (en) | 2022-05-10 | 2022-05-10 | Device for rapidly testing surface tension of high-temperature single crystal silicon |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202221099677.1U CN217765955U (en) | 2022-05-10 | 2022-05-10 | Device for rapidly testing surface tension of high-temperature single crystal silicon |
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| CN217765955U true CN217765955U (en) | 2022-11-08 |
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| CN202221099677.1U Active CN217765955U (en) | 2022-05-10 | 2022-05-10 | Device for rapidly testing surface tension of high-temperature single crystal silicon |
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Address after: No. 1, Xinxin Road, Jinshanqiao Development Zone, Xuzhou, Jiangsu 221000 Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: No. 1, Xinxin Road, Jinshanqiao Development Zone, Xuzhou, Jiangsu 221000 Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |