CN217740969U - Spinning terahertz efficient transmitter - Google Patents
Spinning terahertz efficient transmitter Download PDFInfo
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- CN217740969U CN217740969U CN202222027527.6U CN202222027527U CN217740969U CN 217740969 U CN217740969 U CN 217740969U CN 202222027527 U CN202222027527 U CN 202222027527U CN 217740969 U CN217740969 U CN 217740969U
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Abstract
The utility model discloses a spinning terahertz high-efficiency emitter, which comprises a substrate, wherein one side of the substrate is sequentially stacked with a one-dimensional periodic photonic crystal, a silicon dioxide intercalation layer and a spinning terahertz source; the one-dimensional periodic photonic crystal is formed by laminating a plurality of one-dimensional photonic crystal elements, wherein each one-dimensional photonic crystal element comprises a silicon nitride layer and a silicon dioxide layer. The utility model discloses a one-dimensional periodic photonic crystal and spin terahertz source interact, realize the excitation of tamm plasmon in its interface department, and then realize the high-efficient absorption of femto second laser, and the femto second laser absorptivity can reach 100% in theory to promote spin terahertz's emission efficiency. In addition, due to the introduction of the one-dimensional periodic photonic crystal, femtosecond laser penetrating through the spinning terahertz high-efficiency emitter does not exist, the trial of ceramic wafers, silicon wafers and other elements is omitted, and the volume and the complexity of the system are reduced.
Description
Technical Field
The utility model relates to a terahertz technical field, concretely relates to spin terahertz is high-efficient transmitter now.
Background
The terahertz frequency band is located between infrared and microwave, is a transition frequency band of macroscopic electronics and microscopic photonics, has various advantages of broadband property, low energy, high permeability, uniqueness and the like, and has great scientific value and wide application prospect in the fields of nondestructive testing, satellite communication, medical diagnosis, satellite communication and the like. The spinning terahertz source has the advantages of low cost, high efficiency and the like due to the unique terahertz generation mechanism, and is an important development direction of the future terahertz technology.
The intensity of the terahertz generated by the spinning terahertz transmitter is closely related to the absorption rate of the spinning terahertz transmitter to femtosecond laser, while the thickness of the spinning terahertz transmitter in the prior art is mostly in the nanometer level, the absorption rate of the femtosecond laser is about 40%, and the generated terahertz is weaker. In addition, except the femtosecond laser absorbed by the spinning terahertz transmitter, a large part of the femtosecond laser can penetrate through the spinning terahertz transmitter, in order to eliminate the influence of the part of transmitted light on equipment in a subsequent light path, the traditional method mostly adopts ceramic wafers, silicon wafers and other modes to block the part of transmitted light, and the whole system is complex and large in size.
Disclosure of Invention
In order to solve the technical problem, the utility model aims at providing a spin terahertz is high-efficient transmitter now.
In order to achieve the above object, the utility model adopts the following technical scheme:
a spinning terahertz high-efficiency transmitter comprises a quartz substrate, wherein one side of the quartz substrate is sequentially stacked with a one-dimensional periodic photonic crystal, a silicon dioxide intercalation layer and a spinning terahertz source; the one-dimensional periodic photonic crystal is formed by laminating a plurality of one-dimensional photonic crystal elements, wherein each one-dimensional photonic crystal element comprises a silicon nitride layer and a silicon dioxide layer, and the silicon nitride layer and the silicon dioxide layer can be prepared and formed in a phase deposition mode. Preferably, the thickness of the silicon dioxide layer is 131.2nm, and the thickness of the silicon nitride layer is 92.24nm; the number of the one-dimensional photonic crystal elements is 10-15.
Furthermore, the thickness of the silicon dioxide intercalation is 55nm, and the silicon dioxide intercalation can be prepared on the one-dimensional photonic crystal element by a vapor deposition mode.
Furthermore, the spin terahertz source comprises a magnetic layer and a non-magnetic layer, wherein the magnetic layer and the non-magnetic layer form a heterostructure, and the heterostructure is prepared by growing on a silicon dioxide intercalation layer by a magnetron sputtering method. Furthermore, the magnetic layer is a cobalt layer, and the nonmagnetic layer is a platinum layer; the cobalt layer and the platinum layer have the same thickness, preferably 4nm.
Compared with the prior art, the utility model has the advantages that:
the utility model discloses a one-dimensional periodic photonic crystal and spin terahertz source interact, realize the excitation of tamm plasmon in its interface department, and then realize the high-efficient absorption of femto second laser, and the femto second laser absorptivity can reach 100% in theory to promote spin terahertz's emission efficiency. In addition, due to the introduction of the one-dimensional periodic photonic crystal, femtosecond laser penetrating through the spinning terahertz high-efficiency emitter does not exist, the trial of ceramic wafers, silicon wafers and other elements is omitted, and the volume and the complexity of the system are reduced.
Drawings
Fig. 1 is an overall structural view of a spinning terahertz high-efficiency transmitter provided by the utility model;
FIG. 2 is a field intensity distribution diagram of a femtosecond laser inside a spinning terahertz high-efficiency transmitter;
FIG. 3 is a graph of the absorption of femtosecond laser light by the emitter versus the wavelength of the femtosecond laser light;
FIG. 4 is a graph of reflectance/transmittance of one-dimensional periodic photonic crystals at different wavelengths;
fig. 5 shows an experimentally measured terahertz time-domain signal generated by a spinning terahertz high-efficiency transmitter.
In the figure: 101 a quartz substrate; 102 one-dimensional periodic photonic crystals; 102-1 one-dimensional photonic crystal element; 103, inserting silicon dioxide; 104 spin terahertz source.
Detailed Description
The present invention will be further described with reference to the following examples and the accompanying drawings so that those skilled in the art can better understand the present invention and can implement the present invention, but the examples are not intended to limit the present invention.
Referring to fig. 1, a spin terahertz high-efficiency transmitter includes a quartz substrate 101, wherein a one-dimensional periodic photonic crystal 102, a silicon dioxide intercalation layer 103 and a spin terahertz source 104 are sequentially stacked on one side of the quartz substrate 101; the one-dimensional periodic photonic crystal 102 is formed by stacking a plurality of one-dimensional photonic crystal elements 102-1, and the one-dimensional photonic crystal element 102-1 includes a silicon nitride layer and a silicon dioxide layer. In fig. 1, the silicon dioxide layer is adjacent to the quartz substrate. It should be noted that the silicon nitride layer may also be designed close to the quartz substrate, which may also achieve the object of the present invention.
Preferably, the number of the one-dimensional photonic crystal elements is 10-15.
Preferably, the spin terahertz source 104 includes a magnetic layer and a nonmagnetic layer, and the magnetic layer and the nonmagnetic layer constitute a heterostructure; the magnetic layer is a cobalt layer, and the non-magnetic layer is a platinum layer; the cobalt layer and the platinum layer are the same thickness. It should be noted that the structure of the spin terahertz source is a structure conventional in the art, wherein: the magnetic layer material can also be selected from other magnetic metals besides cobalt; except that the non-magnetic layer material chooseing for use platinum, also can chooseing for use other non-magnetic metal, it all can realize the utility model aims at, and the technical personnel in the field can suitably improve according to actual conditions, all belong to the utility model discloses a protection scope.
The working principle of the present invention will be described with reference to the accompanying drawings. The utility model discloses a tamm plasmon based on metal and one-dimensional periodic photonic crystal interface, tamm plasmon is as a novel resonance mode of surface plasmon, and it exists in one-dimensional periodic photonic crystal and metal interface department. When light enters the one-dimensional periodic photonic crystal from the metal side, it is excited when the following relationship is satisfied
r m ·r BG ·exp(2iδ)≈1
Wherein r is m Denotes the reflection coefficient, r, of light irradiated on the metal film BG The reflection coefficient of light irradiated on the one-dimensional periodic photonic crystal is shown, and the phase delay of light propagating on the metal interface to the one-dimensional periodic photonic crystal interface is shown by delta, and is closely related to the intercalation thickness between the metal interface and the one-dimensional periodic photonic crystal. Excited Tam plasmaThe electric field intensity of the excimer is strongest at the interface of the metal and the one-dimensional periodic photonic crystal.
As shown in fig. 2, in one embodiment, the femtosecond laser with a center wavelength of 780nm is incident on the spin thz high-efficiency transmitter from the left air layer, and a tamm plasmon is excited at the intermediate intercalation (silicon dioxide intercalation 103) between the spin thz source 104 and the one-dimensional periodic photonic crystal 102, where the intensity of the optical field is strongest, so that the interaction between the femtosecond laser and the spin thz source 104 is increased, and the generation intensity of the spin thz is closely related to the intensity of the optical field acting on the spin thz source 104. Therefore, enhanced emission of spin terahertz is achieved under the enhancement of the Tam plasmon. In the example, the refractive indexes of silicon dioxide and silicon nitride are 1.486,2.114 respectively, the thicknesses of the silicon dioxide and the silicon nitride are 131.2nm and 92.24nm respectively, the thickness of the silicon dioxide intercalation layer is 55nm, the thicknesses of the cobalt thin film and the platinum thin film are the same, the thicknesses of the cobalt thin film and the platinum thin film are 4nm, and the cycle number N =10 of the one-dimensional photonic crystal element. Fig. 3 shows the relationship between the optical energy absorption rate and the wavelength of the emitter, and it can be seen that the absorption rate of the emitter to the 780nm waveband light is greater than 95%, which is much higher than the absorption efficiency of the conventional spin terahertz emitter by 40%.
Fig. 4 is a graph of reflectivity/transmissivity of the one-dimensional periodic photonic crystal at different wavelengths, and it can be seen that the one-dimensional periodic photonic crystal has a higher reflectivity at a 700nm-800nm band, which is far away from the terahertz band, so that the terahertz transmission is less affected, the enhanced terahertz wave generated by the spinning terahertz source can be emitted out through the one-dimensional periodic photonic crystal without hindrance, and the femtosecond laser at the band can be blocked, so that the femtosecond laser which penetrates through the one-dimensional periodic photonic crystal does not exist, the use of a ceramic wafer, a silicon wafer and the like is omitted, and the volume and complexity of the system are reduced.
Fig. 5 shows a terahertz time-domain signal generated by a spin terahertz transmitter measured by an experiment, where a dotted line 1 is a signal generated by a common spin terahertz transmitter without a one-dimensional periodic photonic crystal, and a solid line 2 is a terahertz signal generated by a spin terahertz high-efficiency transmitter containing a one-dimensional periodic photonic crystal.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (6)
1. A spin terahertz high-efficiency transmitter is characterized in that: the terahertz wave detector comprises a substrate, wherein one side of the substrate is sequentially stacked with a one-dimensional periodic photonic crystal, a silicon dioxide intercalation layer and a spinning terahertz source; the one-dimensional periodic photonic crystal is formed by laminating a plurality of one-dimensional photonic crystal elements, wherein each one-dimensional photonic crystal element comprises a silicon nitride layer and a silicon dioxide layer.
2. The spin terahertz high-efficiency transmitter of claim 1, wherein: the substrate is a quartz substrate.
3. The spin terahertz high-efficiency transmitter of claim 1, wherein: the number of the one-dimensional photonic crystal elements is 10-15.
4. The spin terahertz high-efficiency transmitter of claim 1, wherein: the spin terahertz source comprises a magnetic layer and a non-magnetic layer, wherein the magnetic layer and the non-magnetic layer form a heterostructure.
5. The spin terahertz high-efficiency transmitter of claim 4, wherein: the magnetic layer is a cobalt layer; the nonmagnetic layer is a platinum layer.
6. The spin terahertz high-efficiency transmitter of claim 5, wherein: the thickness of the cobalt layer is the same as that of the platinum layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222027527.6U CN217740969U (en) | 2022-08-01 | 2022-08-01 | Spinning terahertz efficient transmitter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222027527.6U CN217740969U (en) | 2022-08-01 | 2022-08-01 | Spinning terahertz efficient transmitter |
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| CN217740969U true CN217740969U (en) | 2022-11-04 |
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