CN217522200U - A miniaturized millimeter-wave LTCC bandpass filter based on embedded dielectric resonators - Google Patents

Abstract

The utility model relates to a wave filter technical field specifically is a based on miniaturized millimeter wave LTCC band pass filter of embedding dielectric resonator, include: the metal layer is composed of a first metal plane, a second metal plane, a third metal plane, a fourth metal plane and a fifth metal plane; and the dielectric layer is arranged between the metal layers and consists of a first square dielectric plate, a second square dielectric plate, a third square dielectric plate and a fourth square dielectric plate. The utility model has the advantages of wide band, low profile, high selectivity, easy processing and miniaturization and the like by arranging the metal layer and the dielectric layer; by arranging the dielectric resonator, the application of the dielectric resonator not only improves the performance of the filter, but also obviously reduces the physical size, and the dielectric resonator has higher engineering application value in 5G communication.

Description

A miniaturized millimeter-wave LTCC bandpass filter based on embedded dielectric resonators

technical field

The utility model relates to the technical field of filters, in particular to a miniaturized millimeter-wave LTCC bandpass filter based on an embedded dielectric resonator.

Background technique

The microwave filter is the core component of the wireless communication system and an important part of the RF front-end, which is used to filter or extract electromagnetic wave signals of different frequencies. With the popularization and development of the fifth-generation mobile communication technology, the wireless communication system has more and more stringent requirements for microwave devices. Therefore, it is an inevitable trend to develop microwave filters with high selectivity, multi-band and miniaturization. The disadvantage of traditional metal resonators is that they must rely on increasing the volume to pursue high quality factors, which cannot meet the requirements of high integration. In view of this, we propose a miniaturized millimeter-wave LTCC bandpass filter based on embedded dielectric resonators.

Utility model content

In order to make up for the above deficiencies, the present invention provides a miniaturized millimeter-wave LTCC bandpass filter based on an embedded dielectric resonator.

The technical scheme of the present utility model is:

A miniaturized millimeter-wave LTCC bandpass filter based on an embedded dielectric resonator, comprising:

a metal layer, the metal layer is composed of a first metal plane, a second metal plane, a third metal plane, a fourth metal plane and a fifth metal plane;

A dielectric layer is provided between the metal layers, and the dielectric layer is composed of a first square dielectric plate, a second square dielectric plate, a third square dielectric plate and a fourth square dielectric plate.

Preferably, the first metal plane is arranged at the top, the second metal plane is arranged under the first metal plane, the third metal plane is arranged under the second metal plane, and the fourth metal plane is arranged at the bottom of the second metal plane. Below the third metal plane, the fifth metal plane is disposed below the fourth metal plane, and the first metal plane, the second metal plane, the third metal plane and the fourth metal plane are provided with a plurality of metal through holes around them.

Preferably, the first metal plane is provided with a first opening and a second opening, the first opening and the second opening are T-shaped, the first opening is arranged under the first metal plane, and the first opening and the second opening are in a T-shape. The two openings are arranged on the right side of the first metal plane.

Preferably, the second metal plane is provided with two notches, wherein one of the notches is provided below the second metal plane, and the other is provided to the right of the second metal plane.

Preferably, the first square dielectric plate is arranged at the top, the second square dielectric plate is arranged below the first square dielectric plate, and the third square dielectric plate is arranged below the second square dielectric plate, so The fourth square dielectric plate is arranged below the third square dielectric plate, and the first square dielectric plate, the second square dielectric plate, the third square dielectric plate and the fourth square dielectric plate are also provided with a number of metal through hole.

Preferably, the first square dielectric plate is arranged between the first metal plane and the second metal plane, the second square dielectric plate is arranged between the second metal plane and the third metal plane, and the third The square dielectric plate is arranged between the third metal plane and the fourth metal plane, and the fourth square dielectric plate is arranged between the fourth metal plane and the fifth metal plane.

Preferably, the first square dielectric plate is a Rogers RT5880 substrate with a thickness of 0.1 mm, the top surface of the first square dielectric plate adopts a coplanar waveguide-slot coupling transition structure, and the back surface of the first square dielectric plate adopts a coplanar waveguide-slot coupling transition structure. A coupling gap is engraved on the metal layer.

Preferably, a square cavity is provided on the third-shaped dielectric plate, and two dielectric resonators are provided in the square cavity, one of the dielectric resonators is arranged under the square cavity, and the other dielectric resonator is arranged under the square cavity. on the right side of the square cavity.

Compared with the prior art, the beneficial effects of the present utility model are:

1. The utility model makes the device have the advantages of wide band, low profile, high selectivity, easy processing and miniaturization by setting the metal layer and the dielectric layer.

2. By setting the dielectric resonator in the present invention, its application not only improves the performance of the filter, but also significantly reduces the physical size, and has high engineering application value in 5G communication.

Description of drawings

1 is an exploded view of the overall structure of the present utility model;

Fig. 2 is the metal layer explosion diagram of the utility model;

Fig. 3 is the dielectric layer explosion diagram of the present utility model;

4 is a top view of the metal layer of the present invention;

FIG. 5 is a top view of the dielectric layer of the present invention.

In the picture:

1, metal layer; 11, first metal plane; 111, first opening; 112, second opening; 12, second metal plane; 121, slot; 13, third metal plane; 14, fourth metal plane; 15. The fifth metal plane;

2. Dielectric layer; 21. The first square dielectric plate; 22, The second square dielectric plate; 23, The third square dielectric plate; 231, The square cavity; 232, The dielectric resonator; 24, The fourth square dielectric plate.

Detailed ways

The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the implementations. example. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise" etc. Or the positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed in a specific orientation and operation, so it cannot be construed as a limitation to the present invention.

Please refer to Figures 1-5, the present utility model provides a technical solution:

A miniaturized millimeter-wave LTCC bandpass filter based on embedded dielectric resonators, as shown in Figure 1, Figure 2 and Figure 4, includes:

Metal layer 1. Metal layer 1 consists of a first metal plane 11, a second metal plane 12, a third metal plane 13, a fourth metal plane 14 and a fifth metal plane 15; The two metal planes 12 are arranged under the first metal plane 11 , the third metal plane 13 is arranged under the second metal plane 12 , the fourth metal plane 14 is arranged under the third metal plane 13 , and the fifth metal plane 15 is arranged under the fourth metal plane 12 . Below the metal plane 14, the first metal plane 11, the second metal plane 12, the third metal plane 13 and the fourth metal plane 14 are provided with a number of metal through holes around them; the first metal plane 11 is provided with a first opening 111 and The second opening 112, the first opening 111 and the second opening 112 are T-shaped, the first opening 111 is located below the first metal plane 11, the second opening 112 is located on the right side of the first metal plane 11; the second metal plane 12 is provided with two slots 121 , one slot 121 is arranged below the second metal plane 12 , and the other slot 121 is arranged to the right of the second metal plane 12 .

It should be added that the metal through holes and the fifth metal plane 15 arranged around the first metal plane 11, the second metal plane 12, the third metal plane 13 and the fourth metal plane 14 are used to isolate the internal and external fields, so as to realize Cavity effect inside the substrate; the top layer of the cavity is a coplanar waveguide feeding structure, and the main transmission mode is the TE10 mode.

As shown in FIG. 3 and FIG. 5 , the dielectric layer 2 is arranged between the metal layers 1 , and the dielectric layer 2 consists of a first square dielectric plate 21 , a second square dielectric plate 22 and a third square dielectric plate 23 and a fourth square dielectric plate 24; the first square dielectric plate 21 is arranged at the top, the second square dielectric plate 22 is arranged below the first square dielectric plate 21, and the third square dielectric plate 23 is arranged on the second square dielectric plate Below the plate 22, the fourth square dielectric plate 24 is arranged below the third square dielectric plate 23, and the first square dielectric plate 21, the second square dielectric plate 22, the third square dielectric plate 23 and the fourth square dielectric plate 24 are also surrounded. There are several metal through holes; the first square dielectric plate 21 is arranged between the first metal plane 11 and the second metal plane 12, and the second square dielectric plate 22 is arranged between the second metal plane 12 and the third metal plane 13, the third-shaped dielectric plate 23 is arranged between the third metal plane 13 and the fourth metal plane 14, and the fourth square dielectric plate 24 is arranged between the fourth metal plane 14 and the fifth metal plane 15; the first The square dielectric plate adopts the Rogers RT5880 substrate (εr=2.2, tanδ=0.0009) with a thickness of ha=0.1mm. The top surface of the first square dielectric plate 21 adopts a coplanar waveguide-slot coupling transition structure, and the first square dielectric plate 21 adopts a coplanar waveguide-slot coupling transition structure. A coupling gap is engraved on the back metal layer of 21; a square cavity 231 is arranged on the third-shaped dielectric plate 23, and two dielectric resonators 232 are arranged in the square cavity 231, one of which is arranged under the square cavity 231, and the other A dielectric resonator 232 is arranged to the right of the square cavity 231 .

It should be added that an LTCC dielectric cavity is formed between the first square dielectric plate 21 , the second square dielectric plate 22 , the third square dielectric plate 23 and the fourth square dielectric plate 24 , and the first square dielectric plate 21 is provided. is used to excite the cavity, and in order to obtain the best coupling effect, and the distance from the center of the gap to the center of the resonant cavity should be the wavelength λg/2;

It should also be added that the dielectric resonator 232 operates in two degenerate modes TEδ11 and TE1δ1. The two degenerate modes are coupled through the square cavity 231, the coplanar waveguide and the etched coupling slit are placed orthogonally to excite these two modes, when the two slits are close to each other, source-load coupling can be introduced between them, as shown in the figure below , showing the coupling topology of the structure:

The calculated coupling matrix is shown in the following figure:

The external coupling Mex and internal coupling Min can be controlled by the length and width of the coplanar waveguide behind the aperture and the width of the square cut, respectively. And the source-to-load coupling can be adjusted by designing the distance between the two slots. Once the passband specification is known, the coupling configuration can be optimized according to the method described above.

In specific use, the filter consists of a first metal plane 11, a second metal plane 12, a third metal plane 13, a fourth metal plane 14, a fifth metal plane 15, a first square dielectric plate 21, a second square dielectric plate The board 22 , the third square dielectric board 23 and the fourth square dielectric board 24 are composed. A high dielectric constant dielectric resonator 232 is embedded in the LTCC dielectric cavity. The input/output is utilized by slots on the metal plane fed by the coplanar waveguide structure on the top metal plane. The simulation results are shown in the following figure:

symbol Value (mm) symbol Value (mm) k 1.06 s 0.04 ds 2.74 d 6.51 ws 0.18 r 1.52 ls 0.96 wd 0.42 rc 0.36 p 3.6 lc₁ 3.18 l 8.9 lc₂ 1.72 ha 0.1 Wc₁ 0.27 hb 0.5 Wc₂ 0.53 hc 0.6 dp 2.86 hd 0.5

The simulation results show that the center frequency of the filter is 35GHz, the relative bandwidth is about 8.5%, the insertion loss is 1.85dB, and the in-band return loss is -20dB. The filter has the advantages of high selectivity, wide bandwidth, small profile, and small size, and has high engineering application value in 5G communication. It also introduces transmission zeros on both sides of the passband, which effectively optimizes the out-of-band suppression effect.

The basic principles, main features and advantages of the present invention have been shown and described above. Those skilled in the art should understand that the present invention is not limited by the above-mentioned embodiments. The above-mentioned embodiments and descriptions are only preferred examples of the present invention and are not intended to limit the present invention. Under the premise of the spirit and scope, the present invention will have various changes and improvements, and these changes and improvements all fall within the scope of the claimed invention. The claimed scope of the present invention is defined by the appended claims and their equivalents.

Claims (8)

1. The utility model provides a based on miniaturized millimeter wave LTCC band pass filter of embedding dielectric resonator which characterized in that includes:

the metal layer (1), the metal layer (1) is composed of a first metal plane (11), a second metal plane (12), a third metal plane (13), a fourth metal plane (14) and a fifth metal plane (15);

and the dielectric layer (2) is arranged between the metal layers (1), and the dielectric layer (2) is composed of a first square dielectric plate (21), a second square dielectric plate (22), a third square dielectric plate (23) and a fourth square dielectric plate (24).

2. The miniaturized millimeter wave LTCC bandpass filter based on embedded dielectric resonators as claimed in claim 1, wherein: first metal plane (11) are located the top, first metal plane (11) below is located in second metal plane (12), second metal plane (12) below is located in third metal plane (13), third metal plane (13) below is located in fourth metal plane (14), fourth metal plane (14) below is located in fifth metal plane (15), first metal plane (11) second metal plane (12), third metal plane (13) and fourth metal plane (14) all are equipped with a plurality of metal through-hole all around.

3. The miniaturized millimeter wave LTCC bandpass filter based on embedded dielectric resonators as claimed in claim 1, wherein: be equipped with first opening (111) and second opening (112) on first metal plane (11), first opening (111) and second opening (112) are the T style of calligraphy, first metal plane (11) below is located in first opening (111), it is right-hand in first metal plane (11) to locate second opening (112).

4. The embedded dielectric resonator based miniaturized millimeter wave LTCC bandpass filter of claim 1, wherein: the second metal plane (12) is provided with two notches (121), one notch (121) is arranged below the second metal plane (12), and the other notch (121) is arranged on the right side of the second metal plane (12).

5. The miniaturized millimeter wave LTCC bandpass filter based on embedded dielectric resonators as claimed in claim 1, wherein: the utility model provides a metal through hole, including first square dielectric plate (21), second square dielectric plate (22), third square dielectric plate (23), fourth square dielectric plate (24), first square dielectric plate (21) are located the top, and first square dielectric plate (22) are located first square dielectric plate (21) below, and second square dielectric plate (23) are located second square dielectric plate (22) below, and third square dielectric plate (23) below is located fourth square dielectric plate (24), also all be equipped with a plurality of metal through-hole around first square dielectric plate (21), second square dielectric plate (22), third square dielectric plate (23) and fourth square dielectric plate (24).

6. The miniaturized millimeter wave LTCC bandpass filter based on embedded dielectric resonators as claimed in claim 1, wherein: the first square dielectric plate (21) is arranged between a first metal plane (11) and a second metal plane (12), the second square dielectric plate (22) is arranged between the second metal plane (12) and a third metal plane (13), the third square dielectric plate (23) is arranged between the third metal plane (13) and a fourth metal plane (14), and the fourth square dielectric plate (24) is arranged between the fourth metal plane (14) and a fifth metal plane (15).

7. The miniaturized millimeter wave LTCC bandpass filter based on embedded dielectric resonators as claimed in claim 1, wherein: the first square dielectric plate is a Rogers RT5880 substrate with the thickness of ha being 0.1mm, the top surface of the first square dielectric plate (21) adopts a coplanar waveguide-gap coupling transition structure, and a coupling gap is etched on a metal layer on the back surface of the first square dielectric plate (21).

8. The miniaturized millimeter wave LTCC bandpass filter based on embedded dielectric resonators as claimed in claim 1, wherein: a square cavity (231) is formed in the third square dielectric plate (23), two dielectric resonators (232) are arranged in the square cavity (231), one of the dielectric resonators (232) is arranged below the square cavity (231), and the other dielectric resonator (232) is arranged on the right side of the square cavity (231).

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