CN217085912U

CN217085912U - 8 defence area alarm module optimization circuit

Info

Publication number: CN217085912U
Application number: CN202220524316.0U
Authority: CN
Inventors: 夏军
Original assignee: Shenzhen Sunray Electronics Co ltd
Current assignee: Shenzhen Sunray Electronics Co ltd
Priority date: 2022-03-10
Filing date: 2022-03-10
Publication date: 2022-07-29
Anticipated expiration: 2032-03-10

Abstract

The utility model relates to the technical field of alarm circuits, in particular to an 8-defense alarm module optimization circuit, which comprises an analog switch HCF4051, a singlechip, a control module and a control module, wherein the analog switch HCF4051 is used for receiving defense signals passing through a resistance network and defense scanning signals output by the singlechip; the comparator LM358 is used for receiving the AD _ ALARM signal sent by the analog switch HCF4051 and carrying out state comparison; the upper threshold reference circuit and the lower threshold reference circuit are used for being connected with the comparator LM358 for threshold setting; the utility model discloses when reinforcement LM358 comparator can play protection installation alarm or newly-increased alarm and insert, can not directly damage the singlechip owing to the condition that voltage surpassed singlechip AD pin bearing capacity has been received in the wrong installation. The situation that the precision of a defense area alarm module is inconsistent due to the fact that the AD sampling power supply reference voltage of the single chip microcomputer is inconsistent can be avoided by adopting a comparator detection mechanism to alarm instead of the single chip microcomputer sampling alarm, and the consistency of products can be better guaranteed.

Description

8 defence area alarm module optimization circuit

Technical Field

The utility model relates to an alarm circuit technical field, concretely relates to 8 defence areas alarm module optimization circuit.

Background

In the prior art, a 8-defense area alarm circuit reports alarm information after scanning states of a defense area alarm one by adopting the combination of single-chip microcomputer AD detection and HC4051D, and the detailed principle is as follows:

alarm 1-Alarm 8 are abnormal detection points of the defense area, and the direct current voltage of Alarm 1-Alarm 8 is 2.35-2.48V in normal state; Z1-Z8 are defense area signals passing through the resistance network and are sent to HCF 4051; AD _ INPUT is a single-chip microcomputer defense area state detection I/O; z _ A0-Z _ A2 are defense area scanning signals output by the singlechip (cycle output: 000-111)

When one of the Alarm 1-Alarm 8 is abnormal and pulls an Alarm X detection point to the ground potential, the corresponding ZX also becomes low level, at the moment, the Z _ A0-Z _ A2 circularly scan the corresponding channel and switch to an AD _ INPUT point, and when the CPU detects that the channel is low, the CPU considers that the defense area is abnormal and sends Alarm sound and Alarm data information to a data bus.

When one of the Alarm 1-Alarm 8 has an abnormality and an Alarm X detection point is changed to be more than +4.2V, the level of the corresponding ZX is also increased, at the moment, the Z _ A0-Z _ A2 circularly scan the corresponding channel to be switched to an AD _ INPUT point, and when the CPU detects that the level value is higher than a value set in a program, the CPU considers that the defense area is abnormal, and sends out Alarm sound and Alarm data information to a data bus;

AD _ INPUT singlechip defence area state detection I/O, alarm level threshold range of inside settlement: + 1.3V- + 2.5V. When the AD _ INPUT point exceeds the range of + 1.3V- +2.5V, the single chip microcomputer sends alarm information.

According to the technology, the output is directly acted on the AD pin of the single chip microcomputer, and if the alarm is installed or the alarm is newly added to be connected, the single chip microcomputer can be directly damaged due to the fact that the voltage exceeds the bearing capacity of the AD pin of the single chip microcomputer when the alarm is installed in error, so that the whole module fails to work and false alarm is possibly generated. Because singlechip AD reference voltage has the deviation, can lead to every 8 defence areas alarm module's sampling precision different, the product uniformity can not guarantee.

SUMMERY OF THE UTILITY MODEL

Not enough to prior art, the utility model discloses an 8 defence areas alarm module optimizing circuit for solve above-mentioned problem.

The utility model discloses a following technical scheme realizes:

the utility model provides an 8 defence areas alarm module optimization circuit, include

The analog switch HCF4051 is used for receiving the defense area signals passing through the resistance network and the defense area scanning signals output by the single chip microcomputer;

the comparator LM358 is used for receiving the AD _ ALARM signal sent by the analog switch HCF4051 and carrying out state comparison;

the upper threshold reference circuit and the lower threshold reference circuit are used for being connected with the comparator LM358 for threshold setting;

and a level converting part for converting the 5V level outputted from the comparator LM358 into a 3.3V level.

Furthermore, the analog switch HCF4051 is an 8-to-1 analog switch and is connected with defense area anomaly detection points Alarm 1-Alarm 8.

Furthermore, the defense area abnormal detection points Alarm 1-Alarm 8 have direct current voltage of 2.35-2.48V during normal work.

Furthermore, the lower threshold reference circuit is composed of resistors R6 and R7 and a capacitor C5; the upper threshold reference circuit is composed of a voltage R5, a diode V3 and a capacitor C4.

Further, the threshold is set as: + 1.2V- + 3V.

Further, the level shift section is composed of resistors R8 to R10.

Further, when the level shift section has no ALARM trigger, ALARM _ L outputs a high level and ALARM _ H outputs a low level.

The utility model has the advantages that:

the utility model discloses when increasing LM358 comparator and can playing protection installation alarm or newly-increased alarm and insert, because the condition that voltage surpassed singlechip AD pin bearing capacity has been received in the mistake installation can not directly damage the singlechip, LM 358's voltage bearing range is bigger than the singlechip bearing range. The situation that the precision of a defense area alarm module is inconsistent due to the fact that the AD sampling power supply reference voltage of the single chip microcomputer is inconsistent can be avoided by adopting a comparator detection mechanism to alarm instead of the single chip microcomputer sampling alarm, and the consistency of products can be better guaranteed.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a circuit connection diagram of the defense area abnormal detection points of the present invention;

fig. 2 is a circuit connection diagram of the utility model analog switch HCF 4051;

fig. 3 is a circuit diagram of the comparator LM358 of the utility model.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.

The embodiment provides an 8-defense area alarm module optimization circuit, which comprises

Referring to fig. 1, Alarm 1-Alarm 8 are defense area abnormal detection points, and the direct current voltages of Alarm 1-Alarm 8 are between 2.35V and 2.48V in normal state.

Referring to fig. 2, Z1 to Z8 are defense area signals passing through a resistance network and then sent to HCF 4051; z _ A0-Z _ A2 are defense area scanning signals (cycle output: 000-111) output by the single chip microcomputer; the AD _ ALARM signal is sent to LM358 comparator N2 for state comparison.

Referring to fig. 3, R6, R7, and C5 form a lower threshold reference circuit; r5, V3 and C4 form an upper threshold reference circuit. The threshold of this embodiment is set as: + 1.2V- + 3V.

The main function of the present embodiment R8-R10 is to convert the 5V level outputted by the LM358 comparator into 3.3V level; when no ALARM is triggered at ordinary times, ALARM _ L outputs high level, ALARM _ H outputs low level.

In the implementation of the embodiment, when one of larm 1-Alarm 8 has an abnormality and pulls an AlarmX detection point to the ground potential, the corresponding ZX also becomes low level, at this time, Z _ a 0-Z _ a2 cyclically scan the corresponding channel to switch to an AD _ Alarm point and send the AD _ Alarm point to pin 5 of LM358 comparator, because the voltage of AD _ Alarm is less than 1.2V reference signal of pin 6 at this time, pin 7 of LM358 comparator outputs low level, and when MCU detects that Alarm _ L becomes low level, it considers that the defence area is abnormal and sends Alarm data information.

In the implementation of this embodiment, when one of the ALARMs 1-8 has an abnormality and the AlarmX detection point becomes +4.2V or more, the level of the corresponding ZX also becomes high, and at this time, Z _ a 0-Z _ a2 cyclically scan the corresponding channel to switch to the AD _ Alarm point and send it to pin 3 of LM358 comparator, because the voltage of AD _ Alarm is greater than the 3V reference signal of pin 2 at this time, pin 1 of LM358 comparator outputs high level, and when the MCU detects that Alarm _ H becomes high level, it considers that the defense area is abnormal, and sends out Alarm information.

To sum up, the utility model discloses when increasing LM358 comparator and can playing protection installation alarm or newly-increased alarm and insert, because the condition that voltage surpassed singlechip AD pin bearing capacity has been received to the mistake installation can not directly damage the singlechip, LM 358's voltage bearing scope is more big than the singlechip bearing scope. The situation that the precision of a defense area alarm module is inconsistent due to the fact that the AD sampling power supply reference voltage of the single chip microcomputer is inconsistent can be avoided by adopting a comparator detection mechanism to alarm instead of the single chip microcomputer sampling alarm, and the consistency of products can be better guaranteed.

The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims

1. An 8-defense area alarm module optimization circuit is characterized by comprising

2. The optimizing circuit of an 8-defense area Alarm module according to claim 1, wherein the analog switch HCF4051 is an 8-to-1 analog switch, and is connected with defense area anomaly detection points Alarm 1-Alarm 8.

3. The optimized circuit of an 8-defense area Alarm module according to claim 2, wherein the defense area abnormal detection points Alarm 1-Alarm 8 have a DC voltage of 2.35-2.48V during normal operation.

4. The optimized circuit of claim 1, wherein the lower threshold reference circuit is composed of resistors R6, R7 and a capacitor C5; the upper threshold reference circuit is composed of a voltage R5, a diode V3 and a capacitor C4.

5. The optimized circuit of claim 1, wherein the threshold is set to: + 1.2V- + 3V.

6. The optimized circuit of claim 1, wherein the level shifter is composed of resistors R8-R10.

7. The optimized 8-zone ALARM module circuit as claimed in claim 6, wherein when the level shift portion has no ALARM trigger, ALARM _ L outputs high level and ALARM _ H outputs low level.