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CN217083957U - Chip-scale infrared spectrometer - Google Patents

Chip-scale infrared spectrometer Download PDF

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CN217083957U
CN217083957U CN202220278245.0U CN202220278245U CN217083957U CN 217083957 U CN217083957 U CN 217083957U CN 202220278245 U CN202220278245 U CN 202220278245U CN 217083957 U CN217083957 U CN 217083957U
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chip
detector
level
infrared spectrometer
spectrometer
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汪洋
王建宇
舒嵘
马艳华
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Shanghai Institute of Technical Physics of CAS
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Abstract

本专利公开了一种芯片级红外光谱仪。包括内外两层封装结构,内层封装将光电转换探测器、分光器件、和探测器驱动与处理集成芯片进行芯片级高集成度封装,外层封装结构将内层结构、微透镜或透镜、微型照明紧密结合,实现整体结构固化。其中分光器件采用薄膜窄带滤光片阵列,光电转换探测器的探测单元之间设计有消除混合光谱的微小间隔,两者在空间上一一对应,不同探测器单元接收不同波长的信号,实现光谱测量。该芯片级光谱仪的优势在于整体尺寸不大于1厘米,紧凑稳固抗震动。

Figure 202220278245

This patent discloses a chip-level infrared spectrometer. Including an inner and outer two-layer encapsulation structure, the inner layer encapsulates the photoelectric conversion detector, spectroscopic device, and detector drive and processing integrated chip for chip-level high-integration packaging, and the outer layer encapsulates the inner layer structure, microlens or lens, micro The lighting is closely combined to achieve the curing of the overall structure. Among them, the spectroscopic device adopts a thin-film narrow-band filter array, and the detection units of the photoelectric conversion detector are designed with a small interval to eliminate the mixed spectrum. The two correspond to each other in space. Different detector units receive signals of different wavelengths to realize the spectrum. Measurement. The advantage of this chip-level spectrometer is that the overall size is not more than 1 cm, and it is compact, stable, and shock-resistant.

Figure 202220278245

Description

芯片级红外光谱仪Chip-scale infrared spectrometer

技术领域technical field

本专利属于光谱测量技术领域,涉及一种芯片级的微型光谱仪。The patent belongs to the technical field of spectral measurement, and relates to a chip-level miniature spectrometer.

背景技术Background technique

光谱探测技术是通过测量目标对不同波长光线的反射和发射差异(反射光谱特征/发射光谱特征)分析其成分、属性(温度、表面结构)等的技术。光谱仪器运用光学原理可以无损地对物质的结构和组分进行定性、定量的分析,是目前科学研究与工业中使用最广泛的分析工具之一。在光谱分析领域,光谱一般分为紫外、可见-近红外、短波、中波红外、热红外等几部分,对应不同的物质特征。红外光谱的光谱特征非常丰富,可用于广泛应用于物质成分、类型等属性的分析和检测,在化学、化工、环保、农业、施工、日常应用等领域都有广泛性需求和应用,随着信息技术的应用,光谱测量技术的应用领域迅速扩展,日常生活中也有很大量的应用需求,例如工农业生产检测普及化、环境与家庭智能化、日常消费电子等方面都有很多应用需求。Spectral detection technology is a technology that analyzes its composition, properties (temperature, surface structure), etc. by measuring the reflection and emission differences (reflection spectral characteristics/emission spectral characteristics) of the target to different wavelengths of light. Spectroscopic instruments use optical principles to non-destructively analyze the structure and composition of substances qualitatively and quantitatively, and are currently one of the most widely used analytical tools in scientific research and industry. In the field of spectral analysis, the spectrum is generally divided into ultraviolet, visible-near infrared, short-wave, mid-wave infrared, thermal infrared and other parts, corresponding to different material characteristics. The spectral characteristics of infrared spectrum are very rich, which can be widely used in the analysis and detection of material composition, type and other properties. With the application of technology, the application field of spectral measurement technology has expanded rapidly, and there are also a large number of application requirements in daily life, such as the popularization of industrial and agricultural production testing, environmental and home intelligence, and daily consumer electronics. There are many application requirements.

常规的具有高光谱分辨率探测仪器体积大、价格高,往往只能用在实验室等场合,小型化的光谱探测或者分析仪可以用于在线应用和野外应用,其性能低于实验室应用的设备,目前已经有多个产品,整体尺寸为10厘米以上,10厘米以下的产品相对较少,这种尺寸的光谱仪一般用于工业、商业等领域,而消费电子、智能生活、健康环保、日常生活、销售行业的普及等方面更是需要光谱测量模块价格更低廉、体积更小巧,使用更便捷,设计更小体积的光谱仪成为刚性需求。Conventional detectors with high spectral resolution are bulky and expensive, and can only be used in laboratories and other occasions. Miniaturized spectral detectors or analyzers can be used in online applications and field applications, and their performance is lower than that of laboratory applications. At present, there are many products, the overall size is more than 10 cm, and there are relatively few products below 10 cm. Spectrometers of this size are generally used in industrial, commercial and other fields, while consumer electronics, smart life, health and environmental protection, daily The popularization of life and sales industry requires the spectral measurement module to be cheaper, smaller in size, and more convenient to use. Designing a spectrometer with a smaller volume has become a rigid requirement.

实现微型坚固、使用方便、成本低廉的红外光谱测量器件或者模组是光谱技术进入更多场景以及日常生活各个环节和领域的重要途径,其技术路径必然是高度的集成化。主要是探测器、分光器件、驱动以及信息处理电路、光学系统的微型化,以及芯片级集成和封装。相关技术已经有诸多发展,但是微型化乃至器件级、芯片级的光谱仪仍旧是技术难题,尺寸为厘米量级的红外光谱仪目前相关生产工艺和产品非常少,无法满足众多领域对光谱仪小型化的要求。The realization of miniature sturdy, easy-to-use, and low-cost infrared spectroscopy measurement devices or modules is an important way for spectroscopy technology to enter more scenes and all aspects and fields of daily life, and its technical path must be highly integrated. Mainly the miniaturization of detectors, spectroscopic devices, driving and information processing circuits, optical systems, and chip-level integration and packaging. There have been many developments in related technologies, but miniaturization and even device-level and chip-level spectrometers are still technical problems. At present, infrared spectrometers with a size of centimeters have very few related production processes and products, which cannot meet the requirements for miniaturization of spectrometers in many fields. .

北京与光科技有限公司2021年提出了一种光谱芯片的制备方法和光谱芯片,获得发明专利(CN 112510059 B)。所述制备方法包括:提供一转移件和一光谱芯片半成品,其中,所述转移件包括硅晶体层和形成于所述硅晶体层上的硅化物层,所述硅晶体层具有规则的晶向结构;在所述光谱芯片半成品的表面形成一可透光介质层;以所述转移件的所述硅化物层键合于所述光谱芯片半成品的所述可透光介质层的方式,将所述转移件耦接于所述光谱芯片半成品,以形成具有光调制结构的所述光谱芯片。这样,以如上所述的特定制备方法制得的所述光谱芯片的表面可以形成具有规则晶向结构的光学层结构,所述光学层结构具有对成像光线进行调制的作用。该发明是典型的光谱芯片,在探测器表面加工滤光结构实现光谱测量,其局限性在于采用硅材料,只能测量可见-近红外波段的信号。In 2021, Beijing Yuguang Technology Co., Ltd. proposed a method for preparing a spectral chip and a spectral chip, and obtained an invention patent (CN 112510059 B). The manufacturing method includes: providing a transfer member and a semi-finished product of a spectral chip, wherein the transfer member includes a silicon crystal layer and a silicide layer formed on the silicon crystal layer, and the silicon crystal layer has a regular crystal orientation structure; a light-transmitting medium layer is formed on the surface of the semi-finished spectrum chip; the silicide layer of the transfer member is bonded to the light-transmitting medium layer of the semi-finished spectrum chip; The transfer member is coupled to the semi-finished spectrometer chip to form the spectrometer chip with a light modulation structure. In this way, an optical layer structure having a regular crystal orientation structure can be formed on the surface of the spectrum chip prepared by the above-mentioned specific preparation method, and the optical layer structure has the function of modulating the imaging light. The invention is a typical spectrum chip. The filter structure is processed on the surface of the detector to realize spectrum measurement. The limitation lies in the use of silicon material, which can only measure signals in the visible-near-infrared band.

在消费电子和工农业在线检测领域,面临不同的检测需求,需要有更多光谱范围选择的光谱仪,例如短波红外(指波长范围在950nm-2500nm的光)的光谱特征较可见近红外波段的光谱特征更加丰富,更具有可识别性,是更常用的物质成分、类型等属性分析和检测的波长范围,该波段的芯片级光谱仪的设计难度更大,成本高,尚没有相关产品,而大多数现有技术仅局限于光谱芯片部件的制作方法和工艺,需要配备驱动、光学镜头等辅助部件才能应用,因此,需要整体功能更加完整的毫米级尺度的微型光谱仪。In the field of consumer electronics, industrial and agricultural online detection, facing different detection requirements, spectrometers with more spectral range options are required. For example, the spectral characteristics of short-wave infrared (referring to light in the wavelength range of 950nm-2500nm) are higher than those of the visible and near-infrared band. The features are richer and more identifiable. It is the wavelength range for the analysis and detection of properties such as the composition and type of materials that are more commonly used. The design of chip-level spectrometers in this band is more difficult and costly. There are no related products, and most The existing technology is only limited to the manufacturing method and process of the spectral chip components, and needs to be equipped with auxiliary components such as drivers and optical lenses to be applied. Therefore, a millimeter-scale micro-spectrometer with more complete overall functions is required.

有更多可选择光谱范围的芯片级光谱仪只有采用芯片级集成的方式,才能实现较低成本批量生产的可能性,而且需要辅助电路和光学元件的集成才能实现整体功能的完整性。本专利利用将红外光谱仪的微型化推进到芯片级集成的方法,实现一种整体体积只有1cm3或者更小、具有完整功能的光谱仪。Chip-scale spectrometers with more selectable spectral ranges can only achieve lower-cost mass production possibilities with chip-level integration, and require the integration of auxiliary circuits and optical components to achieve overall functional integrity. This patent utilizes the method of advancing the miniaturization of infrared spectrometers to chip-level integration, and realizes a spectrometer with an overall volume of only 1 cm 3 or less and full functions.

发明内容SUMMARY OF THE INVENTION

本专利的目的是实现一种一种芯片级红外光谱仪,通过芯片级集成实现整体尺寸为毫米级、功能完整的红外光谱仪,用于消费电子、智能生活、健康环保、日常生活、销售行业等行业的低成本普及型应用场景。The purpose of this patent is to realize a chip-level infrared spectrometer, which can realize an infrared spectrometer with an overall size of millimeters and complete functions through chip-level integration, which is used in consumer electronics, smart life, health and environmental protection, daily life, sales industry and other industries low-cost popular application scenarios.

所述的芯片级红外光谱仪,其主要结构包括:光电转换探测器芯片1、薄膜分光器件2、探测器驱动与处理集成芯片3、内层芯片封装结构4、内封装窗口5、微透镜组或微透镜阵列6、外封装结构7,其特征在于,光电转换探测器1和分光器件2以及探测器驱动与处理集成芯片3通过芯片级封装结构4紧密结合,被测信号从内层窗口5入射;微透镜组或微透镜阵列6、内层结构通过外封装结构7结合在一起构成整体尺寸为毫米量级的光谱仪。The chip-level infrared spectrometer has a main structure including: a photoelectric conversion detector chip 1, a thin film spectroscopic device 2, a detector driving and processing integrated chip 3, an inner-layer chip packaging structure 4, an inner packaging window 5, a microlens group or The microlens array 6 and the outer packaging structure 7 are characterized in that the photoelectric conversion detector 1 and the spectroscopic device 2 and the detector driving and processing integrated chip 3 are closely combined through the chip-level packaging structure 4, and the measured signal is incident from the inner layer window 5 ; The microlens group or microlens array 6 and the inner layer structure are combined together through the outer packaging structure 7 to form a spectrometer with an overall size of the order of millimeters.

其中的分光器件的波长范围在探测器的有效范围内,采用渐变滤光片、超表面、表面等离激元或集成微腔技术的分光薄膜或集成窄带滤光片,分割为多个可选择性透过不同波长信号的窄带滤光单元,和探测器尺寸相匹配,并一一对应。根据探测器的不同,匹配对应波长范围的滤光单元,可以实现可见-近红外波段、短波红外波段、中波红外波段、长波红外波段及不同波段组合的光谱测量。The wavelength range of the spectroscopic device is within the effective range of the detector, using gradient filters, metasurfaces, surface plasmons or spectroscopic films with integrated microcavity technology or integrated narrow-band filters, which can be divided into multiple selectable It is a narrow-band filter unit that transmits signals of different wavelengths, and it matches the size of the detector and corresponds to it one by one. According to the difference of the detector, matching the filter unit of the corresponding wavelength range can realize the spectral measurement of the visible-near infrared band, the short-wave infrared band, the medium-wave infrared band, the long-wave infrared band and the combination of different bands.

光电转换探测器1的探测单元之间有消除薄膜分光器件2所包含的窄带滤光单元边缘的光谱混叠或者偏移影响的微小间隔,使探测器只接收单波长(窄带滤光片有效带通范围内)的光信号。There is a small interval between the detection units of the photoelectric conversion detector 1 to eliminate the influence of spectral aliasing or offset at the edge of the narrow-band filter unit included in the thin-film spectroscopic device 2, so that the detector only receives a single wavelength (the effective band of the narrow-band filter). light signal within the pass range).

微透镜组或微透镜阵列6的汇聚和准直、整形模式和探测器单元的空间分布相匹配,将目标信号均匀分散到探测单元,并垂直照射在分光器件表面。The convergence, collimation, and shaping modes of the microlens group or microlens array 6 are matched with the spatial distribution of the detector unit, and the target signal is uniformly dispersed to the detection unit, and is vertically irradiated on the surface of the spectroscopic device.

其外封装结构7除了固定光学元件外,还具有封装和固定微型光源或光源组8的功能,外封装结构(7)在边缘位置上配有微型光源或光源组8,发光元件可以为一个或者多个,微型光源或光源组8是LED发光二极管、激光二极管、有机LED或者其他微型光源及其组合,封装结构固定发光器件并使光线汇聚照射在被测量目标上,光源的光谱范围和所述的芯片级红外光谱仪相匹配,形成一体化的微型主动照明光谱仪。芯片级光谱仪本身可以不包含光源,集成光源后,可实现室内、无光条件和不良照明条件下的光谱测量,扩大应用适应性。In addition to fixing the optical element, the outer packaging structure 7 also has the function of packaging and fixing the miniature light source or light source group 8. The outer packaging structure (7) is equipped with a miniature light source or light source group 8 at the edge position, and the light-emitting element can be one or a light source group 8. Multiple, miniature light sources or light source groups 8 are LED light emitting diodes, laser diodes, organic LEDs or other miniature light sources and combinations thereof, the encapsulation structure fixes the light emitting device and makes the light converge and irradiate on the target to be measured, the spectral range of the light source and the The chip-level infrared spectrometer is matched to form an integrated miniature active lighting spectrometer. The chip-level spectrometer itself may not contain a light source. After integrating the light source, it can realize spectral measurement indoors, under no-light conditions and under bad lighting conditions, and expand the application adaptability.

本申请的优势一在于提供了一种光谱仪的芯片级集成结构,该结构包括两层,内层结构可对不同材料和功能的芯片进行电路集成和一体化封装,实现探测器芯片、薄膜分光器件和辅助电路系统的最小化,实现内部环境的控制,保证光谱测量精度的可控性,外层结构实现系统集成的最小化,实现整体结构稳定坚固,抗震动。The first advantage of the present application is that a chip-level integrated structure of a spectrometer is provided, the structure includes two layers, and the inner layer structure can perform circuit integration and integrated packaging for chips of different materials and functions, so as to realize detector chips and thin-film spectroscopic devices. And the minimization of the auxiliary circuit system, the control of the internal environment, and the controllability of the spectral measurement accuracy are ensured.

本申请的优势二在于光谱范围可以通过探测器芯片、薄膜分光器件的选择和组合灵活配置,分别实现可见-近红外、短波红外、热红外等谱段的光谱仪。The second advantage of the present application is that the spectral range can be flexibly configured through the selection and combination of detector chips and thin-film spectroscopic devices, respectively, to realize spectrometers in the visible-near infrared, short-wave infrared, thermal infrared and other spectral bands.

本申请的优势三在于提供的方法通过外层结构实现光学元件和照明元件的一体化,使芯片级光谱仪的功能完整,具有仪器的特征。The third advantage of the present application is that the provided method realizes the integration of the optical element and the lighting element through the outer layer structure, so that the function of the chip-level spectrometer is complete and has the characteristics of an instrument.

通过具体实施案例的描述,本申请的优势和特征将会变得显而易见,并可以通过权利要求书中特别指出的手段和组合得到实现。The advantages and features of the present application will become apparent from the description of specific implementation cases, and can be realized by the means and combinations particularly pointed out in the claims.

附图说明Description of drawings

通过结合附图对本申请进行更详细的描述,本申请的上述以及其他目的、特征和优势将变得更加明显。附图用来提供对本申请实施例的进一步理解,并且构成说明书的一部分,与本申请实施例一起用于解释本申请,并不构成对本申请的限制。The above and other objects, features and advantages of the present application will become more apparent from the more detailed description of the present application in conjunction with the accompanying drawings. The accompanying drawings are used to provide a further understanding of the embodiments of the present application, constitute a part of the specification, and are used to explain the present application together with the embodiments of the present application, and do not constitute a limitation to the present application.

图1是芯片级光谱仪的侧视剖面结构示意图。FIG. 1 is a schematic side view of a cross-sectional structure of a chip-scale spectrometer.

图2是芯片级光谱仪的正视结构示意图;Fig. 2 is the front view structure schematic diagram of chip-level spectrometer;

图中:In the picture:

1光电转换探测器芯片;1 photoelectric conversion detector chip;

2分光器件;2 splitting devices;

3探测器驱动与处理集成芯片;3 Detector driver and processing integrated chip;

4内层芯片级封装结构;4 inner-layer chip-scale packaging structure;

5内封装窗口;5 inner package window;

6微透镜组或微透镜阵列;6 microlens groups or microlens arrays;

7外封装结构;7 Outer packaging structure;

8微型光源或光源组。8 miniature light sources or groups of light sources.

图3为短波红外波段的芯片级光谱仪的探测单元及滤光片阵列的布局匹配示意图。FIG. 3 is a schematic diagram of the layout matching of the detection unit and the filter array of the chip-level spectrometer in the short-wave infrared band.

图4为可见近红外波段的芯片级光谱仪的三层结构及空间对应关系示意图。FIG. 4 is a schematic diagram of the three-layer structure and spatial correspondence of a chip-level spectrometer in the visible and near-infrared band.

图5为可见近红外波段的芯片级光谱仪的滤光单元和探测器的空间对应关系示意图。FIG. 5 is a schematic diagram of the spatial correspondence between a filter unit and a detector of a chip-level spectrometer in the visible and near-infrared band.

图6为热红外波段的芯片级光谱仪的滤光单元和探测器对应关系示意图。FIG. 6 is a schematic diagram of the corresponding relationship between the filter unit and the detector of the chip-level spectrometer in the thermal infrared band.

具体实施方式Detailed ways

下面,将参考附图详细地描述根据本申请的示例实施例。显然,所描述的实施例仅仅是本申请的一部分实施例,而不是本申请的全部实施例,应理解,本申请不受这里描述的示例实施例的限制。Hereinafter, exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application, and it should be understood that the present application is not limited by the example embodiments described herein.

芯片级红外光谱仪基于实用化设计理念、微型化理念、面向移动终端应用市场目标,综合考虑成本优化,可形成多种光谱范围和光谱分辨率的不同型号的微型器件。Chip-level infrared spectrometers are based on practical design concepts, miniaturization concepts, and market goals for mobile terminal applications. Considering cost optimization, they can form different types of micro-devices with various spectral ranges and spectral resolutions.

实施例1:短波红外芯片级光谱仪Example 1: Short-wave infrared chip-scale spectrometer

短波红外芯片级光谱仪采用InGaAs探测器芯片实现光谱信号的探测,整体结构如图1所示(没有集成发光元件)。探测器的探测单元(像元)尺寸为25μm*25μm,128个探测单元,采用线阵排列;相匹配的驱动和信号处理电路采用硅基集成电路实现;滤光片采用集成微腔集成滤光片,光谱分辨率5nm,共计124个窄带光谱通道,多余的探测器可通过掩模形成暗像元,采集暗电流或者背景信号,用于信号的处理和温度校正。微透镜采用柱面镜结合反射镜微阵列的形式实现入射光信号分散照射到线阵探测器表面的绿光片上。The short-wave infrared chip-level spectrometer uses an InGaAs detector chip to detect spectral signals. The overall structure is shown in Figure 1 (without integrated light-emitting elements). The size of the detection unit (pixel) of the detector is 25μm*25μm, 128 detection units are arranged in a linear array; the matching driving and signal processing circuits are implemented by silicon-based integrated circuits; the optical filter is integrated with an integrated microcavity. It has a spectral resolution of 5nm and a total of 124 narrow-band spectral channels. The excess detectors can form dark pixels through the mask to collect dark current or background signals for signal processing and temperature correction. The microlens adopts the form of a cylindrical mirror combined with a mirror microarray to realize the dispersion of incident light signals onto the green light sheet on the surface of the linear array detector.

图3是探测单元(实线方框)阵列和集成滤光结构(虚线方框)阵列的相互匹配关系布局实施例,像元之间有10μm的间隔,该间隔使光谱仪在没有光学镜片的情况下避免相邻波段信号产生光谱混杂,提高光谱测量的准确性。Figure 3 is an example of the layout of the mutual matching relationship between the array of detection units (solid line box) and the integrated filter structure (dotted line box) array. There is a 10μm interval between the pixels, which makes the spectrometer in the absence of optical mirrors. It avoids spectral confounding of adjacent band signals and improves the accuracy of spectral measurement.

设计技术指标如下:波长范围1050nm~1650nm,光谱分辨率5nm,器件尺寸10mm*10mm*10mm(不含光源)。分光器件采用的集成微腔滤光片。The design technical indicators are as follows: wavelength range 1050nm ~ 1650nm, spectral resolution 5nm, device size 10mm*10mm*10mm (excluding light source). The integrated microcavity filter used in the spectroscopic device.

实施例2:可见近红外波段的芯片级光谱仪Example 2: Chip-scale spectrometer in visible and near-infrared bands

基于CMOS硅光电探测器实现的芯片级红外光谱仪,测量距离为不大于1厘米,光谱测量范围为650nm-950nm,用于近红外波段光谱测量与特征识别。整体结构组成如图1和图2所示。光源采用四个LED,其光谱合并后可覆盖可见近红外波段,四个LED灯倾斜固定安装,发光面朝向探测窗口光轴方向外0.5厘米处,在光轴距离0.5-1厘米处形成可见-近红外波段的全谱段照明。光电转换探测器采用CMOS硅基面阵探测器,为36*36小面阵,每个探测单元尺寸为10微米*10微米,采用4个像元合并的工作模式,提高系统信噪比,探测器包括读出电路的整体尺寸为0.5mm*0.5mm。薄膜滤光器采用微腔滤光片阵列,每个微腔滤光片的微腔结构尺寸为20微米*20微米,可覆盖4个探测器单元,滤光片光谱带宽为1.5nm,共200个波段,占用800个像元,多余的像元用于进行探测数据的温度和暗电流校正。The chip-level infrared spectrometer based on CMOS silicon photodetector has a measurement distance of not more than 1 cm and a spectral measurement range of 650nm-950nm, which is used for spectral measurement and feature identification in the near-infrared band. The overall structure is shown in Figure 1 and Figure 2. The light source adopts four LEDs, which can cover the visible and near-infrared bands after the spectrum is combined. The four LED lights are installed obliquely and fixedly. The light-emitting surface is 0.5 cm away from the optical axis of the detection window. Full-spectrum illumination in the near-infrared band. The photoelectric conversion detector adopts a CMOS silicon-based area array detector, which is a 36*36 small area array, and the size of each detection unit is 10 microns * 10 microns. The overall size of the device including the readout circuit is 0.5mm*0.5mm. The thin film filter adopts a microcavity filter array. The size of the microcavity structure of each microcavity filter is 20 micrometers * 20 micrometers, which can cover 4 detector units. The spectral bandwidth of the filter is 1.5nm, a total of 200 Each band occupies 800 pixels, and the extra pixels are used for temperature and dark current correction of detection data.

图4所示为可见近红外光谱仪的光电转换探测器、薄膜窄带滤光器、微透镜阵列三层结构之间的空间关系的侧视图,图5为三者关系的俯视图,其中实线正方形表示光电转换器的探测单元,圆形表示微透镜阵列的一个透镜单元,外径表示透镜聚集光线范围,内径表示汇聚并准直后投射到滤光片和探测单元的最大范围,虚线方格对应一个微腔滤光片的一个结构单元,每个微腔滤光片的结构单元对应一个中心波长,只允许(中心波长-0.7nm)到(中心波长+0.7nm)的波长范围内的光信号通过。Fig. 4 is a side view of the spatial relationship among the photoelectric conversion detector, thin-film narrow-band filter, and microlens array of the visible-near-infrared spectrometer, and Fig. 5 is a top view of the relationship among the three, in which the solid line square represents The detection unit of the photoelectric converter, the circle represents a lens unit of the microlens array, the outer diameter represents the range of light collected by the lens, and the inner diameter represents the maximum range that is projected to the filter and detection unit after being converged and collimated, and the dotted square corresponds to a A structural unit of a microcavity filter, each structural unit of a microcavity filter corresponds to a central wavelength, and only allows optical signals in the wavelength range from (central wavelength -0.7nm) to (central wavelength +0.7nm) to pass through .

实施例3:热红外波段的芯片级红外光谱仪Example 3: Chip-level infrared spectrometer in thermal infrared band

基于室温热红外波段探测器的芯片级红外光谱仪整体结构如图1所示,无光源。探测器采用双线阵热红外探测器,滤光元件采用线性渐变滤光片,和探测器之间的对应关系如图6所示,透镜系统采用平面透过窗口,光谱分辨率100nm。The overall structure of the chip-level infrared spectrometer based on the room temperature thermal infrared band detector is shown in Figure 1, without a light source. The detector adopts a double linear thermal infrared detector, the filter element adopts a linear gradient filter, and the corresponding relationship between the detector and the detector is shown in Fig.

Claims (5)

1.一种芯片级红外光谱仪,包括光电转换探测器芯片(1)、分光器件(2)、探测器驱动与处理集成芯片(3)、内层芯片级封装结构(4)、内封装窗口(5)、微透镜组或微透镜阵列(6)、外封装结构(7),其特征在于:1. A chip-level infrared spectrometer, comprising a photoelectric conversion detector chip (1), a spectroscopic device (2), a detector driving and processing integrated chip (3), an inner-layer chip-level packaging structure (4), and an inner packaging window ( 5), a microlens group or a microlens array (6), and an outer packaging structure (7), characterized in that: 所述的光电转换探测器芯片(1)和分光器件(2)以及探测器驱动与处理集成芯片(3)通过芯片级封装结构(4)紧密结合,被测信号从内封装窗口(5)入射,分光器件将不同波长的光透射入不同的探测器单元;外封装结构(7)将微透镜组或微透镜阵列(6)和内层结构结合在一起构成整体尺寸为毫米量级的光谱仪。The photoelectric conversion detector chip (1), the spectroscopic device (2) and the detector driving and processing integrated chip (3) are tightly combined by the chip-level packaging structure (4), and the measured signal is incident from the inner packaging window (5) , the spectroscopic device transmits light of different wavelengths into different detector units; the outer package structure (7) combines the microlens group or microlens array (6) and the inner layer structure to form a spectrometer with an overall size of the order of millimeters. 2.根据权利要求1所述的一种芯片级红外光谱仪,其特征在于,所述的分光器件(2)采用渐变滤光片、超表面、表面等离激元或集成微腔技术的分光薄膜或集成窄带滤光片。2. a kind of chip-level infrared spectrometer according to claim 1, is characterized in that, described spectroscopic device (2) adopts gradient filter, metasurface, surface plasmon or the spectroscopic film of integrated microcavity technology Or integrated narrowband filters. 3.根据权利要求1所述的一种芯片级红外光谱仪,其特征在于,光电转换探测器芯片(1)的探测单元之间有消除窄带滤光单元边缘光谱的混叠或者偏移影响的微小间隔。3. A chip-level infrared spectrometer according to claim 1, characterized in that, between the detection units of the photoelectric conversion detector chip (1), there is a small amount that eliminates aliasing or offset effects of the edge spectrum of the narrow-band filter unit. interval. 4.根据权利要求1所述的一种芯片级红外光谱仪,其特征在于,所述的微透镜组或微透镜阵列(6)的汇聚和准直、整形模式和探测器单元的空间分布相匹配,探测器单元为矩形或者正方形、圆形分布,采用常规汇聚透镜,当采用线阵探测器的情况下,采用柱面镜将目标信号均匀分散到探测单元。4. A chip-level infrared spectrometer according to claim 1, characterized in that the convergence and collimation, shaping mode of the microlens group or microlens array (6) match the spatial distribution of the detector unit , the detector units are distributed in a rectangle or a square or a circle, and a conventional converging lens is used. When a linear array detector is used, a cylindrical mirror is used to uniformly disperse the target signal to the detection unit. 5.根据权利要求1所述的一种芯片级红外光谱仪,其特征在于,所述的外封装结构(7)在边缘位置上配有微型光源或光源组(8),所述的微型光源或光源组(8)是LED发光二极管、激光二极管。5. A chip-level infrared spectrometer according to claim 1, wherein the outer packaging structure (7) is provided with a miniature light source or a light source group (8) at the edge position, and the miniature light source or The light source group (8) is an LED light-emitting diode and a laser diode.
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