CN216904653U - Drive circuit, chip and electronic equipment - Google Patents
Drive circuit, chip and electronic equipment Download PDFInfo
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- CN216904653U CN216904653U CN202123447800.2U CN202123447800U CN216904653U CN 216904653 U CN216904653 U CN 216904653U CN 202123447800 U CN202123447800 U CN 202123447800U CN 216904653 U CN216904653 U CN 216904653U
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Abstract
The application provides a drive circuit, a chip and electronic equipment, and belongs to the technical field of electronics. The driving circuit comprises a high-voltage generating module and a driving module, and the output end of the high-voltage generating module is connected with the grounding end of the driving module. With the application, the high voltage generation module can generate a voltage higher than the reference potential, namely, generate a high voltage ground. Because the output end of the high-voltage generation module is connected with the grounding end of the driving module, the driving module can be driven based on the power supply voltage and the high-voltage ground, and the voltage margin of the driving module is reduced. Therefore, the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, and the whole area of the driving circuit is further reduced.
Description
Technical Field
The present application relates to the field of electronic technologies, and in particular, to a driving circuit, a chip, and an electronic device.
Background
In some application scenarios, electronic circuits need to be driven in a high voltage environment, and such circuits may be referred to as high voltage driving circuits.
If the high-voltage driving circuit adopts low-voltage devices, the low-voltage devices may be broken down under the high-voltage environment, and the high-voltage driving circuit cannot be normally used. Therefore, conventional high voltage driving circuits are generally designed by using high voltage devices.
However, the area of the high-voltage device is large, which is not favorable for saving cost.
SUMMERY OF THE UTILITY MODEL
In order to solve the problems in the prior art, embodiments of the present application provide a driving circuit, a chip, and an electronic device, which can be designed by using a low-voltage device under a high-voltage driving condition, so as to reduce the area of the driving circuit. The technical scheme is as follows:
according to an aspect of the present application, there is provided a driving circuit including a high voltage generating module and a driving module, an output end of the high voltage generating module being connected to a ground end of the driving module.
Optionally, the high voltage generating module includes a voltage stabilizing module and an output module, an output end of the voltage stabilizing module is connected to an input end of the output module, and an output end of the output module is connected to a ground end of the driving module.
Optionally, the voltage stabilizing module includes a zener diode.
Optionally, the voltage stabilizing module includes a first resistance unit, a first current source unit, and a zener diode;
the anode of the Zener diode is connected with the first current source unit, and the cathode of the Zener diode is used for receiving a power supply voltage;
the first resistance unit is arranged between the positive electrode and the negative electrode of the Zener diode;
one end of the first current source unit is connected with the Zener diode, and the other end of the first current source unit is used for receiving a reference potential.
Optionally, the output module includes a first field effect transistor, a control end of the first field effect transistor is connected to an output end of the voltage stabilizing module, and an output end of the first field effect transistor is connected to a ground end of the driving module.
Optionally, the output module further includes a switch unit, one end of the switch unit is connected to the input end of the first field effect transistor, and the other end of the switch unit is used for receiving the reference potential.
Optionally, the switch unit includes a second field effect transistor, a control end of the second field effect transistor is configured to receive a switch control signal, an output end of the second field effect transistor is connected to an input end of the first field effect transistor, and an input end of the second field effect transistor is configured to receive the reference potential.
Optionally, the driving module includes a plurality of sub-driving modules, and a ground terminal of each sub-driving module is connected to an output terminal of the high voltage generating module.
Optionally, the driving circuit includes a plurality of high voltage generating modules, and an output terminal of each high voltage generating module is connected to a ground terminal of one or more of the sub-driving modules.
Optionally, the driving module includes an operational amplifier module and a voltage boost module, an input end of the operational amplifier module is used for receiving a supply voltage, and an output end of the operational amplifier module is connected to an input end of the voltage boost module.
Optionally, the voltage boost module includes a control module and a voltage boost unit, an input end of the control module is connected to an output end of the voltage boost module and an output end of the operational amplifier module, and is configured to receive the power supply voltage, and an output end of the control module is connected to the voltage boost unit.
Optionally, the operational amplifier module includes a second current source unit, a second resistance unit, a third resistance unit and a fourth resistance unit, and the control module includes a fifth resistance unit and a sixth resistance unit.
Optionally, at least one of the second resistance unit, the third resistance unit, the fourth resistance unit, the fifth resistance unit and the sixth resistance unit has a variable resistance value.
Optionally, the third resistance unit and the fourth resistance unit have the same resistance value.
Optionally, the operational amplifier module further includes an operational amplifier and a third field effect transistor;
on the input end side of the operational amplifier, one end of the second resistance unit is used for receiving the power supply voltage, the other end of the second resistance unit is connected with one end of the second current source unit, and the other end of the second current source unit is used for receiving a reference potential;
on one side of the output end of the operational amplifier, one end of the third resistance unit is used for receiving the power supply voltage, the other end of the third resistance unit is connected with one end of the fourth resistance unit, the other end of the fourth resistance unit is connected with the output end of the third field-effect tube, the input end of the third field-effect tube is connected with the output end of the high-voltage generation module, and the control end of the third field-effect tube is connected with the output end of the operational amplifier;
the non-inverting input end of the operational amplifier is used for receiving the electric potential between the second resistance unit and the second current source unit, and the inverting input end of the operational amplifier is used for receiving the electric potential between the third resistance unit and the fourth resistance unit.
Optionally, the control module further includes a comparing unit;
one end of the fifth resistance unit is connected with the output end of the operational amplifier module, the other end of the fifth resistance unit is connected with the sixth resistance unit, and the other end of the sixth resistance unit is connected with the output end of the voltage boosting unit;
one input end of the comparison unit is used for receiving the power supply voltage, the other input end of the comparison unit is used for receiving the potential between the fifth resistance unit and the sixth resistance unit, and the output end of the comparison unit is connected with the voltage boost unit.
Optionally, the boost module includes a plurality of boost channels.
According to another aspect of the present application, there is provided a chip including the above-described driving circuit.
According to another aspect of the present application, there is provided an electronic device including the above-described driving circuit.
In the embodiment of the present application, the high voltage generation module may generate a voltage higher than the reference potential. Because the output end of the high-voltage generation module is connected with the grounding end of the driving module, the driving module can be driven based on the power supply voltage and the voltage higher than the reference potential, and the voltage margin of the driving module is reduced. Therefore, the driving module can be designed by adopting a low-voltage device, the area of the driving module can be reduced, and the whole area of the driving circuit is further reduced.
Drawings
Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments, which is to be read in connection with the accompanying drawings, in which:
FIG. 1 illustrates a schematic diagram of a driver circuit provided in accordance with an exemplary embodiment of the present application;
FIG. 2 illustrates a schematic diagram of a high voltage generation module provided in accordance with an exemplary embodiment of the present application;
FIG. 3 illustrates a schematic diagram of a voltage regulator module provided in accordance with an exemplary embodiment of the present application;
FIG. 4 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 5 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 6 illustrates a schematic diagram of an output module provided in accordance with an exemplary embodiment of the present application;
FIG. 7 illustrates a high voltage generation module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 8 illustrates a drive module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 9 illustrates a drive module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 10 illustrates a schematic diagram of an operational amplifier module provided in accordance with an exemplary embodiment of the present application;
FIG. 11 illustrates a control module schematic provided in accordance with an exemplary embodiment of the present application;
FIG. 12 illustrates a resistive cell schematic provided in accordance with an exemplary embodiment of the present application;
fig. 13 illustrates a schematic diagram of a driving circuit provided according to an exemplary embodiment of the present application.
In the figure, the position of the upper end of the main shaft,
1. a high voltage generation module; 11. a voltage stabilization module; 12. an output module; 121. a switch unit; 2. a drive module; 21. an operational amplifier module; 22. a boost module; 221. a control module; 2211. a comparison unit; 222. a pressure increasing unit.
Detailed Description
Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided for a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are for illustration purposes only and are not intended to limit the scope of the present application.
The term "include" and variations thereof as used herein are open-ended, i.e., "including but not limited to". The term "based on" is "based, at least in part, on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Relevant definitions for other terms will be given in the following description. It should be noted that the terms "first", "second", and the like in the present application are only used for distinguishing different devices, modules or units, and are not used for limiting the order or interdependence of the functions performed by the devices, modules or units.
It is noted that references to "a", "an", and "the" modifications in this application are intended to be illustrative rather than limiting, and that those skilled in the art will recognize that reference to "one or more" unless the context clearly dictates otherwise.
The names of messages or information exchanged between a plurality of devices in the embodiments of the present application are for illustrative purposes only, and are not intended to limit the scope of the messages or information.
The embodiment of the application provides a driving circuit, and the driving circuit can be integrated in a chip or arranged in an electronic device.
Referring to the schematic diagram of the driving circuit shown in fig. 1, the driving circuit may include a high voltage generating module 1 and a driving module 2, and an output terminal of the high voltage generating module 1 is connected to a ground terminal of the driving module 2.
The implementation principle can be as follows:
a high voltage generation module 1 operable to generate a first voltage;
the driving module 2 may be configured to receive a first voltage and perform driving based on the supply voltage and the first voltage.
The first voltage is greater than a reference potential, and the reference potential may be a zero potential or a system reference potential, and is a potential reference point set in the chip or the electronic device. The power supply voltage may refer to a power supply voltage or a battery voltage, and may also be a voltage for power supply output by other circuits, which is not limited in this embodiment.
In one possible embodiment, when the drive circuit is powered up, the entire drive circuit may be driven based on the supply voltage and the reference potential.
In the high voltage generation module 1, the above-described first voltage may be generated based on the supply voltage and the reference potential. And the first voltage generated by the high voltage generation module 1 is used as a potential reference point of the driving module 2, and the driving module 2 is driven based on the power supply voltage and the first voltage, so that the driving module 2 can work normally.
Since the reference potential is usually zero potential or close to zero potential and belongs to low voltage, the reference potential received in the circuit is usually called "ground", and the first voltage is adopted in the driving module 2 to realize the original "ground" function, so that the first voltage can be called "high voltage ground".
Optionally, referring to the schematic diagram of the high voltage generating module shown in fig. 2, the high voltage generating module 1 may include a voltage stabilizing module 11 and an output module 12, an output end of the voltage stabilizing module 11 is connected to an input end of the output module 12, and an output end of the output module 12 is connected to a ground end of the driving module 2.
The implementation principle can be as follows:
a voltage stabilizing module 11, configured to output a second voltage;
the output module 12 may be configured to output the first voltage based on the supply voltage and the second voltage.
Optionally, the voltage stabilizing module 11 may include a zener diode based on which the voltage is stabilized.
Alternatively, referring to the schematic diagram of the regulator module shown in fig. 3, the regulator module 11 may include a first resistance unit R1, a first current source unit, and a zener diode. The anode of the Zener diode is connected with the first current source unit, and the cathode of the Zener diode is connected with the power supply voltage. The first resistance unit R1 may be disposed between the positive and negative electrodes of the zener diode in parallel with the zener diode. One end of the first current source unit is connected with the anode of the Zener diode, and the other end of the first current source unit is used for receiving a reference potential and is connected with the Zener diode in series. The second voltage output is the voltage at the cathode of the zener diode.
The implementation principle can be as follows:
after the driving circuit is initialized, the zener diode breaks down in a reverse direction to stabilize the voltage, which is set to Vd, that is, the voltage across the zener diode or across the resistor is Vd. If the power supply voltage is the battery voltage VBAT, the second voltage output by the voltage stabilizing module 11 may be VBAT-Vd.
Of course, the voltage stabilizing module 11 may also adopt other specific circuits, for example, the first current source unit may be replaced by a resistor unit, and may generate a stable voltage, and the specific circuit structure of the voltage stabilizing module 11 is not limited in this embodiment.
Alternatively, referring to the output module schematic diagram shown in fig. 4, the output module 12 may include a first fet M1, a control terminal of the first fet M1 being connected to the output terminal of the voltage stabilizing module 11 for receiving the second voltage; the output end is connected with the grounding end of the driving module 2 and used for outputting a first voltage. The control terminal of the first field effect transistor M1 is a gate, the input terminal is a source/drain, and the output terminal is a drain/source.
The implementation principle can be as follows:
the first fet M1 may be an NMOS (N-Metal-Oxide-Semiconductor) transistor, the voltage at the control terminal (i.e., the gate voltage of the NMOS transistor) is the second voltage, the voltage at the output terminal (i.e., the source voltage of the NMOS transistor) is the first voltage, the input terminal (i.e., the drain of the NMOS transistor) is in a high-impedance state, and at this time, the first voltage may be a sum of the second voltage and a threshold voltage, where the threshold voltage is a voltage between the output terminal and the control terminal when the first fet M1 is in a critical conduction state. When the voltage stabilizing module 11 shown in fig. 3 is combined with the output module 12 shown in fig. 4, the first voltage is H _ AGND, and the second voltage is VBAT-Vd, then H _ AGND is VBAT-Vd + VTH, where VTH is the threshold voltage.
Of course, the first fet M1 may also be a PMOS (P-Metal-Oxide-Semiconductor) transistor, and the specific type of the first fet M1 is not limited in this embodiment.
Optionally, referring to the schematic diagram of the output module shown in fig. 5, the output module 12 may further include a switch unit 121, one end of the switch unit 121 is connected to the input end of the first field-effect transistor M1, and the other end is used for receiving the reference potential.
The implementation principle can be as follows:
the switching unit 121 may be used to control the voltage output by the high voltage generating module 1. The first field effect transistor M1 is in a conducting state, when the switch unit 121 is conducting, the first voltage output by the high voltage generating module 1 is a reference potential, that is, the high voltage generating module 1 does not generate a high voltage ground at this time; when the switching unit 121 is turned off, the input terminal of the first fet M1 is in a high impedance state, and the high voltage generating module 1 can generate a high voltage ground.
Alternatively, referring to the schematic diagram of the output module shown in fig. 6, the switch unit 121 may include a second fet M2, a control terminal of the second fet M2 is configured to receive a switch control signal, an output terminal of the second fet M2 is connected to an input terminal of the first fet M1, and an input terminal of the second fet M1 is configured to receive a reference potential. The control terminal of the second fet M2 is a gate, the input terminal is a source/drain, and the output terminal is a drain/source.
The implementation principle can be as follows:
the second fet M2 may be a PMOS transistor. When the switch control signal is at a high level, the second fet M2 is turned off, that is, the switching unit 121 is turned off; when the switch control signal is at a low level, the second fet M2 is turned on, i.e., the switch unit 121 is turned on.
Of course, the second fet M2 may also be an NMOS transistor, and the present embodiment does not limit the specific type of the second fet M2. Alternatively, the switch unit 121 may be another switch circuit, and the specific circuit structure of the switch unit 121 is not limited in this embodiment.
Optionally, the driving module 2 may include a plurality of sub-driving modules, and a ground terminal of each sub-driving module is connected to the output terminal of the high voltage generating module 1, and is respectively configured to receive the first voltage. The sub-driving module may be formed by any part of the circuits in the driving module 2, and the specific circuit structure of the sub-driving module is not limited in this embodiment.
Optionally, the driving circuit includes a plurality of high voltage generating modules 1, and an output terminal of each high voltage generating module 1 is connected to a ground terminal of one or more sub-driving modules, respectively, so as to input the first voltage to the sub-driving modules.
The implementation principle can be as follows:
the current that high voltage generation module 1 can bear is limited, therefore can set up a plurality of high voltage generation modules 1 that connect in parallel and share the current, guarantees circuit performance.
In a possible embodiment, since the device influencing the withstand current is mainly a field effect transistor, the multiplexing voltage stabilizing module 11 may provide the second voltage for a plurality of output modules 12 connected in parallel, and each output module 12 outputs the first voltage, respectively, thereby reducing the area as much as possible in the case of including a plurality of high voltage generating modules 1. Referring to the schematic diagram of the high voltage generation module shown in fig. 7, the voltage stabilizing module 11 may be connected in series with a plurality of output modules 12, the plurality of output modules 12 are connected in parallel, and a circuit formed by the voltage stabilizing module 11 and one output module 12 is referred to as one high voltage generation module 1.
Optionally, the driving circuit may be a boost circuit, and is configured to implement a boost function, and at this time, the driving module 2 may be further configured to output a third voltage based on the supply voltage.
The third voltage is greater than the power supply voltage, and may be a boosted output voltage. That is, the driving module 2 may boost the power supply voltage and output the boosted voltage.
Optionally, referring to the schematic diagram of the driving module shown in fig. 8, the driving module 2 may include an operational amplifier module 21 and a voltage boost module 22, an input end of the operational amplifier module 21 is configured to receive a supply voltage, and an output end of the operational amplifier module is connected to an input end of the voltage boost module 22.
The implementation principle is as follows:
the operational amplifier module 21 is used for outputting a fourth voltage based on the power supply voltage;
and a boosting module 22, configured to output the boosted third voltage based on the fourth voltage.
Optionally, the third voltage may conform to a set boost parameter.
In a possible embodiment, the input voltage required by the voltage boost module 22 is not necessarily equal to the supply voltage, so the operational amplifier module 21 may be used to input the supply voltage, adjust the supply voltage, and output the fourth voltage. Further, the fourth voltage is used as the input voltage of the voltage boost module 22, and the voltage boost module 22 may increase the output voltage until the set boost parameter is reached, where the output voltage is the third voltage.
Optionally, referring to the schematic diagram of the driving module shown in fig. 9, the voltage boost module 22 may include a control module 221 and a voltage boost unit 222, an input end of the control module 221 is connected to an output end of the voltage boost module 22 and an output end of the operational amplifier module 21 and is configured to receive a supply voltage, and an output end of the control module 221 is connected to the voltage boost unit 222.
The implementation principle is as follows:
the control module 221 may be configured to output a start control signal based on the feedback voltage, the fourth voltage, and the supply voltage of the voltage boost unit 222, where the start control signal is used to control the operating state of the voltage boost unit 222.
On this basis, the boosting unit 222 may be configured to increase the output voltage when the output voltage does not reach the above-described set boosting parameter; and when the output voltage reaches the set boosting parameter, stopping increasing the output voltage. The output voltage may be maintained at the third voltage, that is, at the set boosting parameter after the voltage reaches the set boosting parameter.
Alternatively, the operational amplifier module 21 may include a second current source unit, a second resistance unit R2, a third resistance unit R3, and a fourth resistance unit R4, and the control module 221 may include a fifth resistance unit R5 and a sixth resistance unit R6, and the third voltage may be made to conform to the set boosting parameter through the above units.
The current values of the first current source unit and the second current source unit may be reference current values, or may be other constant current values, which is not limited in this embodiment.
Optionally, referring to the schematic diagram of the operational amplifier module shown in fig. 10, on the input end side of the operational amplifier, one end of the second resistance unit R2 is used for receiving the supply voltage, the other end of the second resistance unit R2 is connected to one end of the second current source unit, and the other end of the second current source unit is used for receiving the reference potential.
On the output end side of the operational amplifier, one end of the third resistance unit R3 is used for receiving a power supply voltage, the other end of the third resistance unit R3 is connected with one end of the fourth resistance unit R4, the other end of the fourth resistance unit R4 is connected with the output end of the third field effect transistor M3, the input end of the third field effect transistor M3 is connected with the output end of the high voltage generation module 1, and the control end of the third field effect transistor M3 is connected with the output end of the operational amplifier. The control terminal of the third fet M3 is a gate, the input terminal is a source/drain, and the output terminal is a drain/source.
The non-inverting input terminal of the operational amplifier receives a potential between the second resistance unit R2 and the second current source unit, and the inverting input terminal receives a potential between the third resistance unit R3 and the fourth resistance unit R4.
The implementation principle is as follows:
after the circuit is powered on, the second resistance unit R2 and the second current source unit may form a path. The fourth voltage output by the operational amplifier module 21 is the potential of the other end of the fourth resistance unit R4.
If the current value of the second current source unit is IREF, the fourth voltage is VOUT1, and the power supply voltage is VBAT, then after the circuit is powered on, based on the principle of virtual short and virtual disconnection of the operational amplifier, the fourth voltage VOUT1 ═ VBAT-IREF × R2 × (R3+ R4)/R3 can be obtained.
Alternatively, referring to the schematic diagram of the control module shown in fig. 11, the control module 221 may include a fifth resistance unit R5, a sixth resistance unit R6 and a comparison unit 2211, and the rest of the boosting module 22 for implementing boosting may be referred to as a boosting unit 222. One end of the fifth resistance unit R5 is connected to the output end of the operational amplifier module 21, the other end is connected to the sixth resistance unit R6, and the other end of the sixth resistance unit R6 is connected to the output end of the voltage boost unit 222. The comparing unit 2211 has a first input for receiving the supply voltage, a second input for receiving the potential between the fifth resistance unit R5 and the sixth resistance unit R6, and an output connected to the voltage boost unit 222.
The implementation principle is as follows:
the comparing unit 2211 comprises two input terminals and an output terminal, and the comparing unit 2211 is configured to compare voltages of the first input terminal and the second input terminal, and if the voltage of the first input terminal is greater than the voltage of the second input terminal, the output terminal may output a first level, and if the voltage of the first input terminal is less than the voltage of the second input terminal, the output terminal may output a second level. Optionally, the first level is a high level, and the second level is a low level; alternatively, the first level is a low level and the second level is a high level.
One end of the fourth resistor unit R4 is used for receiving the fourth voltage, the other end of the fourth resistor unit R4 is connected to the fifth resistor unit R5, and the other end of the fifth resistor unit R5 is used for receiving the feedback voltage output by the voltage boost module 22.
Let Vq be the voltage at the junction of the fourth resistor unit R4 and the fifth resistor unit R5, and VBAT be the power supply voltage. When the voltage output by the voltage boosting module 22 does not reach the set voltage boosting parameter, and the voltage Vq at the second input terminal of the comparing unit 2211 is smaller than the voltage at the first input terminal (i.e. the power supply voltage VBAT), the comparing unit 2211 may output a first level as a start control signal to control the voltage boosting unit 222 to start, so as to implement the function of increasing the voltage. When the voltage output by the voltage boosting module 22 reaches the set voltage boosting parameter, the voltage Vq at the second input terminal of the comparing unit 2211 increases to be greater than the voltage at the first input terminal (i.e. the power supply voltage VBAT), and the state of the comparing unit 2211 is inverted, so that the second level can be output, and the voltage boosting unit 222 is controlled to stop increasing the voltage.
A specific boosting unit 222 may be formed based on an oscillation circuit and a charge pump unit, and may be implemented by using an existing circuit structure, and the specific circuit structure of the boosting unit 222 is not limited in this embodiment.
If the fourth voltage is VOUT1 and the third voltage is VOUT2, when the voltage output by the boost module 22 reaches the set boost parameter, i.e., when the loop is stable, Vq is VBAT, which can be obtained by (VOUT2-VBAT)/R5 is (VBAT-VOUT1)/R4 according to ohm's law, and VOUT1 is VBAT- (VOUT2-VBAT) R4/R5.
The expression of VOUT1 obtained in the operational amplifier module 21 is equal to the expression of VOUT1 obtained in the boost module 22, and VOUT2-VBAT ═ IREF × R2 × R6(R3+ R4)/(R3 × R5) is further obtained by sorting. VOUT2-VBAT is the setting of the boost parameter, and the "setting" means that the resistance values of the second resistor unit R2 to the sixth resistor unit R6 can be designed, and the current value of the second current source unit can also be designed, so as to achieve the effect of controlling the boost parameter.
The resistance unit described above may be one resistance element or a combination of a plurality of resistance elements. Optionally, at least one of the second resistor unit R2, the third resistor unit R3, the fourth resistor unit R4, the fifth resistor unit R5 and the sixth resistor unit R6 may have a variable resistance value. As shown in fig. 12, any one of the resistance units may be a combination of a plurality of resistance elements, and the resistance value of the access circuit may be controlled by logic.
Optionally, the third resistance unit R3 and the fourth resistance unit R4 have the same resistance value, that is, the above-mentioned R3 is R4. On the basis, VOUT2-VBAT may be equal to 2 × IREF × R2 × R6/R5, so that the boosting parameters may be designed at least through the second current source unit, the second resistance unit R2, the fifth resistance unit R5, and the sixth resistance unit R6, thereby reducing the design difficulty.
Optionally, the above description may refer to an implementation of one boost channel, and the boost module 22 may include a plurality of boost channels, where the principle of each boost channel is the same, and the description is omitted here. Each boosting channel can output corresponding third voltage, and the set boosting parameters between every two boosting channels are the same or different. That is, if boost channels with different boost parameters are required, different boost parameters can be obtained by designing the fourth resistance unit R4 and the fifth resistance unit R5 of each boost channel.
Also, when there are a plurality of supercharging passages, there may be included the following cases: firstly, the set boosting parameters of each boosting channel are the same; secondly, the set boosting parameters of each boosting channel are different; thirdly, the set boosting parameters of the partial boosting channels are the same, and the set boosting parameters of the partial boosting channels are different. The present embodiment does not limit the set boost parameter of the boost passage.
Fig. 13 shows a specific driving circuit, wherein OP is an operational amplifier in the operational amplifier module 21, CMP is the comparison unit 2211, OSC is an oscillation circuit in the voltage boost unit 222, CHP is a charge pump unit in the voltage boost unit 222, EN is the start control signal, CLK is a clock control signal, and H _ AGND and H _ CHP _ AGND are the first voltage (i.e., high-voltage ground). The high-voltage ground generated by the high-voltage generation module 1 may be input to ground terminals of the operational amplifier module 21 and the voltage boost module 22, under the driving of the supply voltage VBAT and the high-voltage ground, the operational amplifier module 21 generates a fourth voltage VOUT1 based on the supply voltage VBAT, and the control module 221 may determine whether the output voltage of the voltage boost unit 222 reaches the boost parameter and control whether the voltage boost unit 222 increases the voltage based on the feedback voltage of the voltage boost unit 222, the fourth voltage VOUT1 and the supply voltage VBAT. When the output voltage of the boosting unit 222 does not reach the boosting parameter, the output voltage may be increased; when the output voltage of the boosting unit 222 reaches the above boosting parameter, the increase of the output voltage is stopped, and the third voltage VOUT2 is maintained at a voltage that meets the boosting parameter. Optionally, the driving module 2 may further include a zener diode for protecting the circuit, wherein an anode of the zener diode is used for receiving a potential between the fourth resistor unit R4 and the fifth resistor unit R5, and a cathode of the zener diode is used for receiving the supply voltage.
The embodiment of the application can obtain the following beneficial effects:
(1) the high voltage generation module 1 may generate a voltage higher than the reference potential, i.e. generate a high voltage ground. Since the output terminal of the high voltage generation module 1 is connected to the ground terminal of the driving module 2, the driving module 2 can be driven based on the supply voltage and the high voltage ground, and the voltage margin of the driving module 2 is reduced. Therefore, the driving module 2 can be designed by using a low voltage device, and the area of the driving module 2 can be reduced, thereby reducing the area of the whole driving circuit.
(2) By adopting the circuit structure provided by the application, the resistance value of at least three resistance units can be designed, the control of the boosting parameters is realized, and the design difficulty is reduced.
The exemplary embodiment of the present application also provides a chip including the driving circuit provided by the embodiment of the present application. In the embodiment of the application, the driving module 2 is driven based on the power supply voltage and the high voltage ground, the voltage margin of the driving module 2 can be reduced, so that the driving module 2 can be designed by adopting a low-voltage device, the area of the driving module 2 can be reduced, the whole area of the driving circuit is reduced, the area of the chip occupied by the driving circuit is correspondingly reduced, and the performance of the chip can be improved.
The exemplary embodiment of the present application also provides an electronic device including the driving circuit provided by the embodiment of the present application. In the embodiment of the application, the driving module 2 is driven based on the power supply voltage and the high voltage ground, the voltage margin of the driving module 2 can be reduced, so that the driving module 2 can be designed by adopting a low-voltage device, the area of the driving module 2 can be reduced, the whole area of a driving circuit is reduced, and the performance of the electronic equipment can be improved.
Claims (17)
1. The driving circuit is characterized by comprising a high-voltage generation module (1) and a driving module (2), wherein the output end of the high-voltage generation module (1) is connected with the grounding end of the driving module (2);
the high-voltage generation module (1) comprises a voltage stabilizing module (11) and an output module (12), wherein the output end of the voltage stabilizing module (11) is connected with the input end of the output module (12), and the output end of the output module (12) is connected with the grounding end of the driving module (2);
the output module (12) comprises a first field effect transistor, the control end of the first field effect transistor is connected with the output end of the voltage stabilizing module (11), and the output end of the first field effect transistor is connected with the grounding end of the driving module (2).
2. The driver circuit according to claim 1, wherein the voltage regulation module (11) comprises a zener diode.
3. The driver circuit according to claim 2, wherein the voltage stabilization module (11) comprises a first resistance unit, a first current source unit and a zener diode;
the anode of the Zener diode is connected with the first current source unit, and the cathode of the Zener diode is used for receiving a power supply voltage;
the first resistance unit is arranged between the positive electrode and the negative electrode of the Zener diode;
one end of the first current source unit is connected with the anode of the Zener diode, and the other end of the first current source unit is used for receiving a reference potential.
4. The driving circuit according to claim 1, wherein the output module (12) further comprises a switching unit (121), one end of the switching unit (121) is connected to the input end of the first field effect transistor, and the other end is used for receiving a reference potential.
5. The driver circuit according to claim 4, wherein the switching unit (121) comprises a second FET having a control terminal for receiving a switching control signal, an output terminal connected to the input terminal of the first FET, and an input terminal for receiving the reference potential.
6. The driving circuit according to any one of claims 1 to 5, wherein the driving module (2) comprises a plurality of sub-driving modules (2), and a ground terminal of each sub-driving module (2) is connected to an output terminal of the high voltage generating module (1).
7. The driving circuit according to claim 6, wherein the driving circuit comprises a plurality of high voltage generating modules (1), and an output terminal of each high voltage generating module (1) is connected to a ground terminal of one or more of the sub-driving modules (2).
8. The driving circuit according to claim 1, wherein the driving module (2) comprises an operational amplifier module (21) and a voltage boost module (22), an input terminal of the operational amplifier module (21) is configured to receive a supply voltage, and an output terminal of the operational amplifier module is connected to an input terminal of the voltage boost module (22).
9. The driving circuit according to claim 8, wherein the voltage boost module (22) comprises a control module (221) and a voltage boost unit (222), an input terminal of the control module (221) is connected to an output terminal of the voltage boost module (22) and an output terminal of the operational amplifier module (21) and is configured to receive the supply voltage, and an output terminal of the control module (221) is connected to the voltage boost unit (222).
10. The driving circuit according to claim 9, wherein the operational amplifier module (21) comprises a second current source unit, a second resistance unit, a third resistance unit and a fourth resistance unit, and the control module (221) comprises a fifth resistance unit and a sixth resistance unit.
11. The driving circuit according to claim 10, wherein at least one of the second resistance unit, the third resistance unit, the fourth resistance unit, the fifth resistance unit, and the sixth resistance unit has a variable resistance value.
12. The driving circuit according to claim 10, wherein the third resistance unit and the fourth resistance unit have equal resistance values.
13. The driving circuit according to claim 10, wherein the operational amplifier module (21) further comprises an operational amplifier and a third field effect transistor;
on the input end side of the operational amplifier, one end of the second resistance unit is used for receiving the power supply voltage, the other end of the second resistance unit is connected with one end of the second current source unit, and the other end of the second current source unit is used for receiving a reference potential;
on one side of the output end of the operational amplifier, one end of the third resistance unit is used for receiving the power supply voltage, the other end of the third resistance unit is connected with one end of the fourth resistance unit, the other end of the fourth resistance unit is connected with the output end of the third field-effect tube, the input end of the third field-effect tube is connected with the output end of the high-voltage generation module (1), and the control end of the third field-effect tube is connected with the output end of the operational amplifier;
the non-inverting input end of the operational amplifier is used for receiving the electric potential between the second resistance unit and the second current source unit, and the inverting input end of the operational amplifier is used for receiving the electric potential between the third resistance unit and the fourth resistance unit.
14. The drive circuit according to claim 10, wherein the control module (221) further comprises a comparison unit (2211);
one end of the fifth resistance unit is connected with the output end of the operational amplifier module (21), the other end of the fifth resistance unit is connected with the sixth resistance unit, and the other end of the sixth resistance unit is connected with the output end of the pressurization unit (222);
one input end of the comparison unit (2211) is used for receiving the power supply voltage, the other input end of the comparison unit is used for receiving the potential between the fifth resistance unit and the sixth resistance unit, and the output end of the comparison unit is connected with the voltage boosting unit (222).
15. The drive circuit according to claim 8, wherein the boost module (22) comprises a plurality of boost channels.
16. A chip comprising a driver circuit as claimed in any one of claims 1 to 15.
17. An electronic device, characterized in that it comprises a driver circuit according to any one of claims 1-15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123447800.2U CN216904653U (en) | 2021-12-30 | 2021-12-30 | Drive circuit, chip and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123447800.2U CN216904653U (en) | 2021-12-30 | 2021-12-30 | Drive circuit, chip and electronic equipment |
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| Publication Number | Publication Date |
|---|---|
| CN216904653U true CN216904653U (en) | 2022-07-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202123447800.2U Active CN216904653U (en) | 2021-12-30 | 2021-12-30 | Drive circuit, chip and electronic equipment |
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| Country | Link |
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| CN (1) | CN216904653U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023125517A1 (en) * | 2021-12-30 | 2023-07-06 | 合肥市芯海电子科技有限公司 | Drive circuit, chip, and electronic device |
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2021
- 2021-12-30 CN CN202123447800.2U patent/CN216904653U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023125517A1 (en) * | 2021-12-30 | 2023-07-06 | 合肥市芯海电子科技有限公司 | Drive circuit, chip, and electronic device |
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