CN216871905U

CN216871905U - System for preventing solar monocrystalline silicon piece from being washed and rinsed

Info

Publication number: CN216871905U
Application number: CN202122715202.2U
Authority: CN
Inventors: 李飞洋; 郭俊文; 胡玉峰; 王冬雪; 王大伟; 张小慧
Original assignee: Inner Mongolia Zhonghuan Solar Material Co Ltd
Current assignee: Inner Mongolia Zhonghuan Solar Material Co Ltd
Priority date: 2021-11-08
Filing date: 2021-11-08
Publication date: 2022-07-01
Anticipated expiration: 2031-11-08

Abstract

The utility model provides a system for preventing a solar monocrystalline silicon piece from being washed and rinsed, which comprises: the cleaning loop comprises a feeding groove, a cleaning agent groove, a first rinsing groove, a chemical groove, a second rinsing groove and a slow lifting groove which are sequentially arranged, wherein the number of the first rinsing grooves is at least two, and the first rinsing grooves are used for preventing floating pieces. The utility model has the advantages that the generation of floating wafers can be completely avoided, and the self-loss of the silicon wafers is reduced; floating pieces are not generated, and personnel do not need to stop to process the foam and the floating pieces, so that the output is effectively increased, and the production efficiency is improved; the production cost is reduced, the cleaning overflow amount is not increased for preventing the floating sheet, and the waste of water resources is reduced; the cleaning agent can effectively clean the residual cleaning agent on the surface of the silicon wafer, reduce the residual amount of the cleaning agent or impurities on the surface of the silicon wafer, prevent the wafer from floating, improve the cleaning effect and the cleaning efficiency, and reduce the water consumption when the silicon wafer is cleaned. The cleaning quality and the economic benefit are obviously improved. Through the adjustment of the cleaning system, the pollution of the liquid medicine can be reduced, and the cleaning quality of the product is ensured.

Description

System for preventing solar monocrystalline silicon piece from being washed and rinsed

Technical Field

The utility model belongs to the field of cleaning of solar monocrystalline silicon wafers, and particularly relates to a system for preventing solar monocrystalline silicon wafers from being cleaned and floated.

Background

The silicon wafer needs to be cleaned after the silicon wafer is cut by the diamond wire, the cleaning process is imperative along with the trend of accelerating and increasing efficiency in the photovoltaic industry, and the medicament dosage is inevitably increased to ensure the quality after the cleaning time is shortened. The increase in the amount of the chemical agent exerts pressure on the rinsing capability, and the rinsing is likely to be incomplete.

At present, in the cleaning of solar monocrystalline silicon wafers, the condition that silicon wafers float due to foams generated in a hydrogen peroxide chemical tank generally exists, and the silicon wafers float more and more seriously along with the obvious liquid supplementing time. Can produce the self-loss of different degrees behind the floating piece, personnel handle simultaneously and float the piece and can cause very big time waste, influence production efficiency and make the output receive great influence, need increase silicon chip washing overflow volume for improving and float the piece, cause very big wasting of resources.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a system for preventing a solar monocrystalline silicon wafer from being rinsed, which can prevent the silicon wafer from being rinsed in the rinsing process.

In order to solve the technical problems, the utility model adopts the technical scheme that: a system for preventing rinsing of a solar monocrystalline silicon wafer, comprising: the cleaning loop comprises a feeding groove, a cleaning agent groove, a first rinsing groove, a chemical groove, a second rinsing groove and a slow lifting groove which are sequentially arranged, wherein the number of the first rinsing grooves is at least two, and the first rinsing grooves are used for preventing floating pieces.

Further, the method also comprises the following steps: the overflow loop comprises a fast heating groove, a slow pulling groove, the second rinsing groove, the first rinsing groove and the feeding groove which are sequentially arranged.

Further, the second rinsing tank is communicated with the first rinsing tank through three water storage tanks;

the first rinsing groove is communicated with the feeding groove through a water storage tank.

Further, the overflow speed of the pure water in the overflow loop is 15L/min.

Furthermore, the cleaning agent tank comprises a first tank and a second tank, and the same cleaning agent can be contained in the first tank and the second tank and is used for cleaning metal ions and silicon mud on the surface of the silicon wafer.

Further, the first rinsing tank comprises a third tank and a fourth tank, and pure water for rinsing residual chemical reagents or organic solvents on the surfaces of the silicon wafers can be contained in the third tank and the fourth tank.

Furthermore, the three grooves are communicated with the four grooves through two water storage tanks.

Further, the chemical tank comprises five tanks, and the five tanks are used for cleaning and removing residual organic matters on the surface of the silicon wafer.

Further, the second rinse tank includes: the washing machine comprises a six-tank, a seven-tank and an eight-tank, wherein pure water for rinsing residual chemical reagents, metal ions or organic solvents can be contained in the six-tank, the seven-tank and the eight-tank. Further, the slow pull groove includes: nine tanks, which can contain pure water, rinse the silicon wafer under the heating of the fast heating tank and slowly lift the silicon wafer in the heated pure water.

Due to the adoption of the technical scheme, the method has the following advantages:

the generation of floating wafers can be completely avoided, and the self-damage of silicon wafers is reduced; floating pieces are not generated, and personnel do not need to stop to process foams, so that the output is effectively increased, and the production efficiency is improved; the production cost is reduced, the cleaning overflow amount is not increased for preventing the floating sheet, and the waste of water resources is reduced;

the residual cleaning agent on the surface of the silicon wafer can be effectively cleaned, the residual amount of the cleaning agent or impurities on the surface of the silicon wafer is reduced, the wafer floating is prevented, the cleaning effect and the cleaning efficiency are improved, and the water consumption in the process of cleaning the silicon wafer is reduced. The cleaning quality and the economic benefit are obviously improved. Through the adjustment to cleaning system, reducible liquid medicine pollution guarantees the cleaning quality of product, and easily realizes, is suitable for extensive popularization.

Drawings

FIG. 1 is a schematic view of the improved distribution and overflow structure of a pre-silicon wafer cleaning tank according to the present invention;

FIG. 2 is a schematic diagram of a system for preventing rinsing of silicon wafers according to one embodiment of the present invention.

In the figure:

1. one groove 2, two grooves 3 and three grooves

4. Four grooves 5, five grooves 6 and six grooves

7. Seven grooves 8, eight grooves 9 and nine grooves

10. Feeding trough 11, fast heating trough 12 and pure water inlet pipe

13. A first water storage tank 14, a second water storage tank 15 and a third water storage tank

Detailed Description

The utility model is further illustrated by the following examples and figures:

in the current cleaning process of the solar monocrystalline silicon wafer, three grooves of an original cleaning process are cleaning agent grooves, the silicon wafer is rinsed by four grooves and then enters a five-groove chemical tank for cleaning after being cleaned by the cleaning agent grooves, and because more cleaning agent residues are rinsed by only one time of rinsing through four grooves, more cleaning agent is carried into five grooves, the cleaning agent and hydrogen peroxide in the five grooves are subjected to saponification reaction, more and more severe foam is generated, the foam is generated in the hydrogen peroxide chemical tank, a large amount of foam is attached to the surface of the silicon wafer, the buoyancy of water to the silicon wafer is increased, the condition of silicon wafer floating is caused, and the silicon wafer floating is more and more serious along with the liquid supplementing time. Can produce the self-loss of different degrees behind the floating piece, personnel handle simultaneously and float the piece and can cause very big time waste, influence production efficiency and make the output receive great influence, need increase silicon chip washing overflow volume for improving and float the piece, cause very big wasting of resources.

To improve this situation, in one embodiment of the present invention, as shown in fig. 2, a system for preventing rinsing of a solar monocrystalline silicon wafer comprises: the device comprises a cleaning loop and an overflow loop, wherein the cleaning loop and the overflow loop are partially overlapped and are opposite in path.

In this embodiment, the cleaning circuit includes a feeding tank 10, a cleaning agent tank, a first rinsing tank, a chemical tank, a second rinsing tank, and a slow pulling tank, which are sequentially arranged, and in the process of cleaning the silicon wafer, the silicon wafer is cleaned by the feeding tank 10 after sequentially passing through the cleaning agent tank, the first rinsing tank, the chemical tank, the second rinsing tank, and the slow pulling tank. The overflow loop comprises a quick heating tank 11, a second rinsing tank, a first rinsing tank and a feeding tank which are sequentially arranged, wherein the second rinsing tank is communicated with the first rinsing tank through three water storage tanks; the first rinsing groove is communicated with the feeding groove 10 through a water storage tank, and pure water in the pure water inlet pipe 12 sequentially passes through the fast heating groove 11, the slow pulling groove, the second rinsing groove, the first rinsing groove and the feeding groove, so that overflow and supplement of the pure water during cleaning are met.

The overflow structure before improvement is that pure water is respectively communicated with the fast heating groove 11 and the second rinsing groove, wherein the overflow speed in a loop of the pure water inlet pipe 12 communicated with the second rinsing groove is 10L/min, the overflow speed in a loop of the pure water inlet pipe 12 communicated with the fast heating groove 11 is 15L/min, and the rinsing capacity of 4 is improved by increasing the overflow speed, so that floating pieces are prevented from being generated, but the floating pieces are easily generated; this embodiment is improving the back, and pure water inlet tube 12 only communicates fast heat groove 11, preheats for carrying the pull tank slowly through fast heat groove 11, and the overflow speed of pure water is 15L/min in the overflow return circuit, has only increased the quantity of first rinsing groove, just can prevent the production of rinsing the piece, can satisfy the overflow demand of wasing the silicon chip simultaneously, need not increase the washing overflow volume after improving simultaneously, reduce water wasting of resources, accord with energy-concerving and environment-protective green production theory more.

In order to avoid the generation of rinsing slices, at least two first rinsing grooves are arranged, the silicon wafer is rinsed by the at least two first rinsing grooves after being cleaned by the cleaning agent grooves, the cleaning agent residues are basically rinsed, no reaction is basically caused when the silicon wafer enters the chemical tank, and the silicon wafer cannot generate foam to cause the rinsing of the silicon wafer; meanwhile, in the embodiment, the liquid change and cleaning of the whole system are performed in a period of 30 days.

As shown in fig. 2, the cleaning agent tank includes a tank 1 and two tanks 2, and the same cleaning agent is provided in the tank 1 and the two tanks 2, and in this embodiment, the tank 1 and the two tanks 2 are cleaning agent tanks, and the cleaning agent can adopt: potassium hydroxide, sodium hydroxide, inorganic base, a surfactant, an organic solvent and the like are arranged in the first tank 1 and the second tank 2 to achieve the effect of cleaning metal ions and silicon mud on the surface of the silicon wafer; the three cleaning agent grooves are arranged in the original silicon wafer cleaning process, and in order to prevent the silicon wafer from floating, the three grooves 3 are arranged as rinsing grooves, so that the concentrations of the cleaning agents in the first groove 1 and the second groove 2 in the cleaning agent grooves can be properly increased, the cleaning strength is enhanced, and the cleaning requirement is met.

As shown in fig. 2, in this embodiment, two first rinsing tanks are provided, where the first rinsing tank includes three tanks 3 and four tanks 4, and pure water is provided in the three tanks 3 and the four tanks 4 for rinsing residual chemical cleaning agent and/or organic solvent, and by changing the three tanks 3 to be the first rinsing tank, the silicon wafer is rinsed by the three tanks 3 and the four tanks 4 after passing through the cleaning agent tank, and then the cleaning agent remains and is basically rinsed clean, and enters the five tanks 5 without reaction, so that no foam is generated to cause rinsing, and therefore, the generation of rinsing is fundamentally avoided.

Meanwhile, the three-tank 3 and the four-tank 4 are communicated through the two water storage tanks and are limited by height, and running water which needs to continuously flow in the rinsing process does not overflow through height fall between the three-tank 3 and the four-tank 4 because the whole height is higher, so that the pure water can directly flow through the water storage tanks and the pump.

As shown in fig. 2, the chemical tank includes five tanks 5, and the five tanks 5 are used for cleaning and removing residual organic matters on the surface of the silicon wafer, and the chemical tank in this embodiment mainly adopts: hydrogen peroxide and potassium hydroxide, and the like.

As shown in fig. 2, the second rinse tank includes: the device comprises a six-groove 6, a seven-groove 7 and an eight-groove 8, pure water is arranged in the six-groove 6, the seven-groove 7 and the eight-groove 8, the six-groove 6, the seven-groove 7 and the eight-groove 8 are sequentially arranged in a height-increasing mode, overflow is achieved through height difference, and the pure water is used for rinsing residual chemical reagents, metal ions and/or organic solvents.

As shown in fig. 2, the slow pull groove includes: nine grooves 9 are provided with pure water in nine grooves 9, and nine grooves 9 are high more than eight grooves 8 and set up equally, realize the overflow through the difference in height for the rinsing slowly promotes the silicon chip at high temperature pure water, is favorable to the follow-up stoving of silicon chip.

The working process of one embodiment of the utility model is as follows:

firstly, placing a flower basket loaded with a silicon wafer in a tank 1 filled with a cleaning agent, cleaning the silicon wafer by using a cleaning agent solution, and cleaning metal ions and silicon mud on the surface of the silicon wafer, wherein the cleaning agent mainly adopts potassium hydroxide, sodium hydroxide, inorganic base, a surfactant, an organic solvent and the like;

after the silicon wafer is cleaned by the first cleaning agent tank 1 and the second cleaning agent tank 2, the silicon wafer is placed in the third tank 3 of the first rinsing tank, pure water overflow cleaning is carried out on the silicon wafer, then pure water overflow cleaning is carried out by the fourth tank 4, and residual cleaning agents and/or organic solvents are rinsed, so that residual organic matters are prevented from entering the fifth tank 5 to react, and the rinsing caused by foam is prevented;

after rinsing in the first rinsing tank, placing the silicon wafer in a fifth chemical tank 5, and cleaning the silicon wafer to remove residual organic matters on the surface of the silicon wafer;

after the silicon wafer is cleaned by the chemical tank, the silicon wafer is placed in a second rinsing tank, pure water rinsing is carried out on the silicon wafer, the silicon wafer sequentially passes through a six-tank 6, a seven-tank 7 and an eight-tank 8, and residual chemical reagents, metal ions and/or organic solvents are rinsed to prevent residues on the silicon wafer;

after rinsing in the second rinsing tank, placing the silicon wafer in the nine slow lifting tanks 9, rinsing the silicon wafer and slowly lifting the silicon wafer in high-temperature pure water; after slow pulling, the silicon wafer is placed in an oven and dried, and the cleaning is finished.

In the silicon wafer cleaning process, pure water in an overflow loop sequentially passes through a fast heating tank, a nine-tank 9, an eight-tank 8, a seven-tank 7, a six-tank 6 and a three-water storage tank at an overflow speed of 15L/min, is pumped to the four-tank 4 by a pump, is pumped to the three-tank 3 by a pump through the two-water storage tank, and is finally pumped to an upper material tank 10 by a pump through the first water storage tank, so that the overflow and supplement of the pure water during cleaning are met.

The improved post-cleaning process has the advantages that the three grooves are modified into the pure water rinsing groove from the cleaning agent groove, the silicon wafer is rinsed by the three grooves and the four grooves after being cleaned by the cleaning agent groove, the silicon wafer is rinsed basically and cleanly by the cleaning agent residue after being rinsed by the three grooves and the four grooves, the silicon wafer enters the five grooves basically without reaction, no foam is generated, the silicon wafer is not rinsed, meanwhile, the concentration of the cleaning machine groove is increased, the silicon wafer is prevented from being cleaned and polluted, the pure water inlet overflow is reduced, and the water resource waste is reduced.

The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.

Claims

1. A system for preventing rinsing of a solar monocrystalline silicon wafer, comprising: the cleaning loop comprises a feeding groove, a cleaning agent groove, a first rinsing groove, a chemical groove, a second rinsing groove and a slow lifting groove which are sequentially arranged, wherein the number of the first rinsing grooves is at least two, and the first rinsing grooves are used for preventing floating pieces.

2. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 1, wherein: further comprising: the overflow loop comprises a fast heating groove, a slow pulling groove, the second rinsing groove, the first rinsing groove and the feeding groove which are sequentially arranged.

3. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 2, wherein: the second rinsing groove is communicated with the first rinsing groove through three water storage tanks;

4. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 2 or 3, wherein: the overflow speed of the pure water in the overflow loop is 15L/min.

5. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 1, wherein: the cleaning agent tank comprises a first tank and a second tank, and the same cleaning agent can be contained in the first tank and the second tank and is used for cleaning metal ions and silicon mud on the surface of the silicon wafer.

6. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 1, wherein: the first rinsing tank comprises a third tank and a fourth tank, and pure water for rinsing residual chemical reagents or organic solvents on the surfaces of the silicon wafers can be contained in the third tank and the fourth tank.

7. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 6, wherein: the three grooves are communicated with the four grooves through two water storage tanks.

8. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 1, wherein: the chemical tank comprises five tanks, and the five tanks are used for cleaning and removing residual organic matters on the surface of the silicon wafer.

9. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 1, wherein: the second rinse tank includes: the washing machine comprises a six-tank, a seven-tank and an eight-tank, wherein pure water for rinsing residual chemical reagents, metal ions or organic solvents can be contained in the six-tank, the seven-tank and the eight-tank.

10. The system for preventing solar monocrystalline silicon piece from washing rinsing pieces as claimed in claim 2, wherein: the slow lifting groove comprises: nine tanks, which can contain pure water, rinse the silicon wafer under the heating of the fast heating tank and slowly lift the silicon wafer in the heated pure water.