CN216749856U - SiC wafer carrier and epitaxial growth equipment - Google Patents
SiC wafer carrier and epitaxial growth equipment Download PDFInfo
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- CN216749856U CN216749856U CN202122948030.3U CN202122948030U CN216749856U CN 216749856 U CN216749856 U CN 216749856U CN 202122948030 U CN202122948030 U CN 202122948030U CN 216749856 U CN216749856 U CN 216749856U
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- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 14
- 239000010439 graphite Substances 0.000 claims abstract description 14
- 230000006978 adaptation Effects 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 239000012634 fragment Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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Abstract
The utility model provides a SiC wafer carrier and epitaxial growth equipment, the carrier is installed on the roating seat in epitaxial growth equipment cavity, the carrier is graphite integrated into one piece's disc, its below is equipped with the joint roating seat and is used for preventing that the carrier from along rotation axis radial movement's arch, its top is equipped with the recess that the adaptation was put into perpendicularly from the top in the SiC wafer, have the step that is used for supporting the SiC wafer in the recess, the region has the SiC coating outside the carrier upper surface recess, the dish of carrying by placing the wafer has been solved, the base of carrying the dish is placed, and carry the outer lane on the base upper surface, the split type carrier that well circle and inner circle are constituteed, the outer lane that its pure SiC was made, well circle and the split type accessory of inner circle are with high costs, easy frisby or dish fracture, need open the chamber and readjust the position or clear up the piece, influence production efficiency and product yield scheduling problem.
Description
Technical Field
The utility model relates to a semiconductor field particularly, relates to a SiC wafer carrier and epitaxial growth equipment.
Background
The SiC material has great advantages in power electronic semiconductor devices due to its high breakdown field strength, thermal conductivity and electron mobility. The SiC epitaxy is used as the base of the device and has important influence on the device. At present, most of domestic SiC epitaxial models include a japanese Nuflare model which is a vertical structure airflow model and an italian LPE model which performs epitaxy under high-speed rotation.
The existing carrier consists of a carrying disc made of graphite and used for placing a wafer, a base made of graphite and used for placing the carrying disc, and an outer ring, a middle ring and an inner ring which are made of pure SiC and carried on the upper surface of the base, wherein the outer ring, the middle ring and the inner ring are used for preventing graphite powder on the upper surface of the base exposed at high temperature from volatilizing in a cavity and polluting epitaxial growth. In practical use, the following problems exist: 1. the outer ring, the middle ring and the inner ring fittings made of pure SiC have very high cost; 2. the outer ring, the middle ring and the inner ring are arranged above the base, and are easy to displace to cause the breakage of a flying disc or a disc under high-speed rotation, and the position needs to be readjusted by opening a cavity or fragments need to be cleaned, so that the production efficiency and the product yield are influenced; 3. the inner ring is made of pure SiC with high hardness, the inner ring is generally made thicker, the split type carrying disc is also thinner, when the carrying disc carrying the wafer is placed in the base accommodating groove, a larger height difference exists between the upper surface of the wafer and the upper surface of the inner ring, and in the epitaxial growth process, eddy current is easily formed at the edge of the wafer to influence the uniformity of epitaxial growth.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a SiC wafer carrier and epitaxial growth equipment, the carrier is installed on the roating seat in epitaxial growth equipment cavity, the carrier is graphite integrated into one piece's disc, its below is equipped with the joint roating seat and is used for preventing that the carrier from along rotation axis radial movement's arch, its top is equipped with the recess that the adaptation was put into perpendicularly from the top in the SiC wafer, there is the step that is used for supporting the SiC wafer in the recess, the region has the SiC coating outside the carrier upper surface recess, the dish of carrying by placing the wafer has been solved, the base of carrying the dish is placed, and carry the outer lane on the base upper surface, the split type carrier that well circle and inner circle are constituteed, the outer lane that its pure SiC was made, well circle and inner circle split type accessory are with high costs, easy flying disc or dish fracture, need open the chamber and readjust the position or clear up the piece, influence production efficiency and product yield scheduling problem.
The embodiment of the utility model is realized like this:
the embodiment of the utility model provides an aspect provides a SiC wafer carrier, and the carrier is installed on the roating seat in epitaxial growth equipment cavity, and the carrier is graphite integrated into one piece's disc, and its below is equipped with the joint roating seat and is used for preventing that the carrier from along rotation axis radial movement's arch, and its top is equipped with the recess that the adaptation was put into perpendicularly from the top in the SiC wafer, has the step that is used for supporting the SiC wafer in the recess, and the region has the SiC coating beyond the recess of carrier upper surface.
Optionally, the carrier thickness is 1.5mm-5.0 mm.
Optionally, the SiC coating thickness is 30 μm to 200 μm.
Optionally, the step-to-SiC coating upper surface height difference is 0.3-1.0 mm.
Optionally, the carrier lower surface has a back surface channel with a radial center and equal distribution in the circumferential direction.
Optionally, the pitch between adjacent back channels on the periphery of the lower surface of the carrier is smaller than the pitch between adjacent back channels on the inner ring.
Optionally, the distance between the adjacent back channels on the periphery, the middle section and the inner ring of the lower surface of the carrier is gradually increased.
Optionally, the carrier upper surface has a radial-center, circumferentially equally-distributed frontal groove.
Optionally, the front channels and the back channels of the carrier do not coincide with each other in an orthographic projection of a plane on which the upper surface of the carrier is located.
The embodiment of the utility model provides a further aspect provides an epitaxial growth equipment, has the SiC wafer carrier that above-mentioned embodiment provided.
The utility model discloses beneficial effect includes:
the utility model provides a SiC wafer carrier and epitaxial growth equipment, the carrier is installed on the roating seat in epitaxial growth equipment cavity, the carrier is graphite integrated into one piece's disc, its below is equipped with the joint roating seat and is used for preventing that the carrier from along rotation axis radial movement's arch, its top is equipped with the recess that the adaptation was put into perpendicularly from the top in the SiC wafer, have the step that is used for supporting the SiC wafer in the recess, the region has the SiC coating outside the carrier upper surface recess, the dish of carrying by placing the wafer has been solved, the base of carrying the dish is placed, and carry the outer lane on the base upper surface, the split type carrier that well circle and inner circle are constituteed, the outer lane that its pure SiC was made, well circle and the split type accessory of inner circle are with high costs, easy frisby or dish fracture, need open the chamber and readjust the position or clear up the piece, influence production efficiency and product yield scheduling problem.
Preferably, the carrier has a thickness of 1.5mm to 5.0mm to provide sufficient rigidity to support the SiC wafer for stable high speed rotation in a high temperature environment.
Preferably, the thickness of the SiC coating is 30-200 μm, so that graphite pulverization at high temperature can be prevented from volatilizing in the cavity and polluting epitaxial growth.
Preferably, the height difference from the step to the upper surface of the SiC coating is 0.3-1.0mm, so that the upper surface of the wafer is basically level with the upper surface of the SiC coating, eddy current cannot be formed at the edge of the wafer in the epitaxial growth process, and the uniformity of epitaxial growth is better.
Preferably, the lower surface of the carrier has back channels which are radial in the center and evenly distributed in the circumferential direction, and the upper surface of the carrier has front channels which are radial in the center and evenly distributed in the circumferential direction, so that the graphite carrier can be prevented from being warped and deformed in a high-temperature environment (the SiC epitaxial growth is generally more than 1600 ℃), and further being cracked to damage a wafer.
Preferably, the distance between adjacent back channels on the periphery of the lower surface of the carrier is smaller than that between adjacent back channels of the inner ring; the distance between adjacent back channels of the periphery, the middle section and the inner ring of the lower surface of the carrier is gradually increased; the stress of the graphite carrier is conducted and released from the inner ring to the periphery, and the risk of warping deformation of the inner ring close to the wafer in a high-temperature environment is further reduced.
Preferably, the carrier front channels and the carrier back channels are in a staggered design that orthographic projections of planes of the carrier upper surfaces are not overlapped, so that stress is not concentrated on weak points where the front channels and the back channels are adjacent, and the risk of cracking from the weak points is reduced.
The utility model provides an epitaxial growth equipment, it has installed above-mentioned SiC wafer carrier, increases substantially wafer epitaxial growth's yield, reduces the cost of replacement carrier.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a front view of an embodiment of the present invention;
FIG. 2 is a rear view of an embodiment of the present invention;
fig. 3 is a cross-sectional view of an embodiment of the present invention.
Icon: 1-a carrier; 11-a groove; 12-step; 13-front side channel; 14-inner ring back groove; 15-middle section back channel; 16-peripheral back side channel; 17-SiC coating; 18-a bump; 2-SiC wafer; 3-rotating seat.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the product of the present invention is used, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Example (b): as shown in fig. 1-3, a SiC wafer carrier 1 is installed on a rotating base 3 in a cavity of an epitaxial growth apparatus, the carrier 1 is a disk-shaped integrally formed from graphite, and has a thickness of 1.5mm to 5.0mm, and an annular protrusion 18 (or more than or equal to 2 bumps, which can realize stable coaxial rotation of the carrier 1 and the rotating base 3) is provided below the carrier 1 and is clamped in the cavity of the rotating base 3 for preventing the carrier 1 from moving away from the rotating base 3 in a radial direction relative to a rotating shaft of the rotating base 3 when the carrier 1 rotates; a groove 11 which is adapted to the SiC wafer 2 and is vertically placed from the upper side is arranged above the SiC wafer, the groove 11 is provided with a flat edge, the overall outline of the groove 11 is slightly larger than that of the SiC wafer 2, an annular step 12 for supporting the SiC wafer 2 is arranged in the groove 11, an SiC coating 17 is arranged in a region outside the groove 11 on the upper surface of the carrier 1 (namely an annular region between the edge of the carrier 1 and the upper side of the groove 11), and the height difference from the step 12 to the upper surface of the SiC coating 17 is 0.3-1.0mm, so that the upper surface of the SiC wafer 2 is basically flush with the upper surface of the SiC coating 17, eddy current cannot be formed at the edge of the SiC wafer 3 in the epitaxial growth process, and the uniformity of epitaxial growth is better. The step 12 can be provided with an annular convex part (not shown in the figure) to support the edge of the SiC wafer 2 to be partially suspended, and the structure can enable a coating material (4H-SiC homoepitaxy in the embodiment) grown by previous epitaxy to be deposited on the step 12 between the convex part and the side wall of the groove 11, so that the problem that the coating material generated in the gap between the SiC wafer 2 and the groove 11 pollutes the back of the next SiC wafer is effectively solved, the coating material adhered to the back of the SiC wafer 2 is greatly reduced, and the yield and the performance of the SiC wafer 2 are greatly improved. The upper surface of the carrier 1 is provided with the SiC coating 17, the thickness of the SiC coating 17 is 30-200 microns, graphite pulverization at high temperature can be prevented from volatilizing in a cavity, SiC epitaxial growth is polluted, and the problems that split type accessories of an outer ring, a middle ring and an inner ring, which are made of pure SiC, are high in cost, the flying disc or disc is easy to break, the position needs to be adjusted again or fragments need to be cleaned after the cavity is opened, the production efficiency and the product yield are influenced and the like are solved.
The lower surface of the carrier 1 is provided with 8-32 circumferential equally-distributed back channels 14, 15 and 16 radially arranged at the center of the rotating shaft, the upper surface of the carrier 1 is provided with 4-8 circumferential equally-distributed front channels 13 radially arranged at the center of the rotating shaft (the front channels are generally less than the back channels in order to reduce the influence on the airflow on the upper surface of the SiC coating), and the length of the channels is 10-70 mm, so that the graphite carrier 1 can be prevented from warping and deforming in a high-temperature environment (the SiC epitaxial growth is generally more than 1600 ℃), and further cracking is caused, and the damage of the SiC wafer 2 is caused. The distance between adjacent peripheral back channels 16 on the lower surface of the carrier 1 is smaller than the distance between adjacent inner ring back channels 14; the distances among the peripheral back channels 16, the middle-section back channels 15 and the inner-ring back channels 14 adjacent to the lower surface of the carrier 1 are gradually increased; the stress of the graphite carrier 1 is gradually conducted and released from the inner ring to the periphery, and the risk of warping deformation of the inner ring close to the SiC wafer 2 in a high-temperature environment is further reduced. The front channels 13 and the back channels 14, 15, and 16 of the carrier 1 are designed in a staggered manner, wherein orthographic projections of the front channels and the back channels on a plane of the upper surface of the carrier 1 are not overlapped (optimally, the staggered projection pitches of the front channels and the back channels are equal), so that stress is not concentrated on weak points where the front channels 13 and the back channels 14, 15, and 16 are adjacent, and the risk of cracking from the weak points is reduced.
An epitaxial growth device (generally MOCVD, PECVD and the like) provided with the carrier 1 of the embodiment has the advantages that the integrated carrier 1 is low in cost and high in replacement speed, a new carrier 1 can be directly replaced after being recycled for several times, the yield of epitaxial growth of a SiC wafer 3 is greatly improved, the cost of replacing the carrier 1 is reduced, the integrated carrier 1 can be directly placed on a rotating seat 3 in a cavity of the epitaxial growth device, the operation is very simple, and the error rate of operators is reduced.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The utility model provides a SiC wafer carrier installs on the roating seat in epitaxial growth equipment cavity, its characterized in that: the carrier is graphite integrated into one piece's disk, and its below is equipped with the joint roating seat and is used for preventing the carrier along the arch of rotation axis radial movement, and its top is equipped with the recess that the adaptation was put into perpendicularly from the top in the SiC wafer, has the step that is used for supporting the SiC wafer in the recess, and the region has the SiC coating outside the recess of carrier upper surface.
2. A SiC wafer carrier as claimed in claim 1 wherein: the thickness of the carrier is 1.5mm-5.0 mm.
3. A SiC wafer carrier as claimed in claim 1 wherein: the thickness of the SiC coating is 30-200 mu m.
4. A SiC wafer carrier as claimed in claim 1 wherein: the height difference from the step to the upper surface of the SiC coating is 0.3-1.0 mm.
5. A SiC wafer carrier as claimed in claim 1 wherein: the carrier lower surface is provided with back channels which are radial in center and evenly distributed in the circumferential direction.
6. A SiC wafer carrier as claimed in claim 5 wherein: the distance between the periphery of the lower surface of the carrier and the back surface channels is smaller than that between the periphery of the lower surface of the carrier and the back surface channels.
7. A SiC wafer carrier as claimed in claim 6 wherein: and the distances among the periphery, the middle section and the inner ring of the lower surface of the carrier, which are adjacent to the back channel, are gradually increased.
8. A SiC wafer carrier as claimed in claim 5 wherein: the upper surface of the carrier is provided with front channels which are radial in the center and are evenly distributed in the circumferential direction.
9. A SiC wafer carrier as claimed in claim 8 in which: the front channels and the back channels of the carrier are not overlapped in the orthographic projection of the plane where the upper surface of the carrier is located.
10. An epitaxial growth apparatus, characterized by: a SiC wafer carrier as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122948030.3U CN216749856U (en) | 2021-11-29 | 2021-11-29 | SiC wafer carrier and epitaxial growth equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122948030.3U CN216749856U (en) | 2021-11-29 | 2021-11-29 | SiC wafer carrier and epitaxial growth equipment |
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| Publication Number | Publication Date |
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| CN216749856U true CN216749856U (en) | 2022-06-14 |
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| CN202122948030.3U Active CN216749856U (en) | 2021-11-29 | 2021-11-29 | SiC wafer carrier and epitaxial growth equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116516468A (en) * | 2023-07-04 | 2023-08-01 | 苏州优晶光电科技有限公司 | Device and method for simultaneously treating multiple silicon carbide seed crystal coatings |
-
2021
- 2021-11-29 CN CN202122948030.3U patent/CN216749856U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116516468A (en) * | 2023-07-04 | 2023-08-01 | 苏州优晶光电科技有限公司 | Device and method for simultaneously treating multiple silicon carbide seed crystal coatings |
| CN116516468B (en) * | 2023-07-04 | 2023-10-13 | 苏州优晶光电科技有限公司 | Device and method for simultaneously treating multiple silicon carbide seed crystal coatings |
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Effective date of registration: 20230320 Address after: 410000 No. 399, Changxing Road, high tech Development Zone, Changsha, Hunan Province Patentee after: Hunan San'an Semiconductor Co.,Ltd. Address before: 361100 No. 753-799, Min'an Avenue, Hongtang Town, Tong'an District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN INTEGRATED CIRCUIT Co.,Ltd. |