CN216512891U - Silicon core structure of polycrystalline silicon reduction furnace and polycrystalline silicon reduction furnace - Google Patents
Silicon core structure of polycrystalline silicon reduction furnace and polycrystalline silicon reduction furnace Download PDFInfo
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- CN216512891U CN216512891U CN202123024414.2U CN202123024414U CN216512891U CN 216512891 U CN216512891 U CN 216512891U CN 202123024414 U CN202123024414 U CN 202123024414U CN 216512891 U CN216512891 U CN 216512891U
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Abstract
The application provides a silicon core structure of a polycrystalline silicon reduction furnace, the polycrystalline silicon reduction furnace and the technical field of polycrystalline silicon production equipment. The silicon core structure of the polycrystalline silicon reduction furnace comprises a first silicon core and a second silicon core which are arranged in parallel and at intervals, wherein the first silicon core and the second silicon core both comprise a first end and a second end in the axial direction, the first ends of the first silicon core and the second silicon core are used for being connected with electrodes on a chassis of the polycrystalline silicon reduction furnace, the second end is connected with at least two cross beams, two ends of each cross beam are respectively connected with the first silicon core and the second silicon core, the at least two cross beams are sequentially distributed in the axial direction of the first silicon core, and a gap is formed between every two adjacent cross beams in the axial direction of the first silicon core. The silicon rod can improve the temperature nonuniformity of the upper end and the lower end of the silicon core, and is favorable for forming the silicon rod with consistent upper diameter, lower diameter and density.
Description
Technical Field
The application relates to the technical field of polycrystalline silicon production equipment, in particular to a silicon core structure of a polycrystalline silicon reduction furnace and the polycrystalline silicon reduction furnace.
Background
Polycrystalline silicon is a basic material in the photovoltaic industry and the microelectronic industry, and the improved siemens method is the mainstream method for preparing polycrystalline silicon at present. The improved Siemens method is characterized in that: in a bell-type Chemical Vapor Deposition (CVD) reactor, a fine silicon core which is electrified and self-heated to 950-1150 ℃ is taken as a deposition carrier, trichlorosilane and hydrogen which are led into a polycrystalline silicon reduction furnace generate hydrogen reduction reaction on the surface of the hot silicon core, reduced silicon is deposited on the surface of a silicon core, the diameter of the silicon core is gradually increased along with the hydrogen reduction reaction until the silicon core reaches the specified size, and finally the silicon core is extracted in the form of a polycrystalline silicon rod. According to the production process, as the material components enter the reduction furnace from the feeding nozzle arranged on the chassis, the mixed gas of hydrogen and trichlorosilane is continuously heated by the silicon core, the heat exchange between the upper part of the silicon core and the mixed gas of hydrogen and trichlorosilane is weakened, so that the temperature of the upper end of the silicon core is higher, the deposition rate of the upper end of the silicon core is higher than that of the lower end, and the silicon rod with the larger diameter of the upper end and the lower density is obtained.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a silicon core structure of a polycrystalline silicon reduction furnace and the polycrystalline silicon reduction furnace, which can improve the temperature nonuniformity of the upper end and the lower end of a silicon core and is beneficial to forming silicon rods with the same upper diameter, lower diameter and density.
The embodiment of the application is realized as follows:
in a first aspect, an embodiment of the present application provides a silicon core structure of a polysilicon reduction furnace, including a first silicon core and a second silicon core that are arranged in parallel and at an interval, where the first silicon core and the second silicon core both include a first end and a second end in an axial direction, the first ends of the first silicon core and the second silicon core are used for being connected with an electrode on a chassis of the polysilicon reduction furnace, the second end is connected with at least two cross beams, two ends of the cross beam are respectively connected with the first silicon core and the second silicon core, the at least two cross beams are sequentially distributed along the axial direction of the first silicon core, and a gap is formed between two adjacent cross beams in the axial direction of the first silicon core.
Further, adjacent two of the at least two beams, wherein a diameter of the beam closer to the first end is larger than a diameter of the beam closer to the second end.
Further, at least two crossbeams all parallel arrangement.
Further, the distance between two adjacent cross beams in the axial direction of the first silicon core is 180-800 mm.
Furthermore, two beams are arranged, wherein two ends of one beam are respectively connected to the ends of the first silicon core and the second silicon core at the second ends, and two ends of the other beam are respectively connected to the upper parts of the first silicon core and the second silicon core.
Furthermore, the first silicon core and the second silicon core are provided with connecting holes, and two ends of the cross beam are fixed to the connecting holes.
In a second aspect, an embodiment of the present application provides a polysilicon reduction furnace, including: the device comprises a chassis, a cover body, a first electrode, a second electrode, a silicon core structure of the polycrystalline silicon reduction furnace in the embodiment of the first aspect, an air inlet pipe and a tail gas pipe;
the cover body is covered on the chassis to form a reaction cavity; the first electrode and the second electrode are fixed on the chassis; the first silicon core and the second silicon core are arranged in the reaction cavity and are respectively connected with the first electrode and the second electrode; the air inlet pipe is connected with the chassis and arranged in the reaction cavity; the tail gas pipe is communicated with the reaction cavity.
Furthermore, graphite clamping seats are installed on the first electrode and the second electrode, each graphite clamping seat is provided with a graphite clamping flap, and the first silicon core and the second silicon core are fixed on the graphite clamping seats through the graphite clamping flaps respectively.
Further, the cover body comprises a first shell and a second shell, the first shell and the second shell are arranged at intervals to form a containing cavity, the second shell is arranged close to the reaction cavity, a cooling liquid inlet is formed in the side wall of the first shell, and a cooling liquid outlet is formed in the top wall of the first shell.
Further, the chassis is provided with an exhaust port which is communicated with an exhaust pipe.
The beneficial effects of the embodiment of the application include:
when the polycrystalline silicon reduction furnace is used, the first silicon core and the second silicon core are heated by electrifying the first electrode and the second electrode, mixed hydrogen/trichlorosilane gas enters the reaction cavity from the gas inlet pipe, vapor deposition is carried out on the surfaces of the high-temperature first silicon core and the high-temperature second silicon core, and tail gas is discharged from the tail gas pipe. Because the silicon core structure has set up two piece at least crossbeams, two piece at least crossbeams distribute along the axial direction of first silicon core in proper order, and two adjacent crossbeams have the clearance in the axial direction of first silicon core, compare in the scheme that sets up a crossbeam, the effectual electric current that reduces a single crossbeam, thereby effectively reduced the temperature of the second end of first silicon core and second silicon core, effectively improved the inhomogeneity of first silicon core and second silicon core temperature, thereby make the upper and lower extreme deposition rate of first silicon core and second silicon core tend towards unanimity, be favorable to forming the silicon rod of diameter and density unanimity from top to bottom.
In addition, the silicon core structure is provided with at least two cross beams, so that the connection stability of the first silicon core and the second silicon core can be improved, the shaking of the first silicon core and the second silicon core can be weakened, the probability of furnace turnover and wall leaning problems in the production process is reduced, and the yield of a single furnace of the reduction furnace is further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic structural view of a polycrystalline silicon reduction furnace according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a silicon core structure according to an embodiment of the present application.
Icon: 100-a polysilicon reduction furnace; 110-silicon core structure; 111-a first silicon core; 112-a second silicon core; 113-a cross beam; 114-a first end; 115-a second end; 120-a chassis; 130-a housing; 131-a first housing; 132-a second housing; 133-a reaction chamber; 134-cooling fluid inlet; 135-coolant outlet; 136-a receiving cavity; 140-a first electrode; 150-a second electrode; 161-graphite card holder; 162-graphite clamp flap; 163-tail gas duct.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is further noted that, unless expressly stated or limited otherwise, the terms "disposed," "mounted," and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Examples
The present embodiment provides a silicon core structure 110 (see fig. 1 and 2) of a polysilicon reduction furnace 100 (see fig. 1) and the polysilicon reduction furnace 100. The silicon core structure 110 of the polysilicon reduction furnace 100 of the present embodiment is used as a part of the polysilicon reduction furnace 100 of the present embodiment, and the polysilicon reduction furnace 100 includes a chassis 120, a cover 130, a first electrode 140, a second electrode 150, the silicon core structure 110 of the present embodiment, an air inlet pipe, and an exhaust pipe 163.
The cover 130 covers the chassis 120 to form a reaction chamber 133, the first electrode 140 and the second electrode 150 are fixed to the chassis 120, the inlet pipe is connected to the chassis 120 and disposed in the reaction chamber 133, and the exhaust pipe 163 is communicated with the reaction chamber 133.
The silicon core structure 110 comprises a first silicon core 111 and a second silicon core 112 which are arranged in parallel and at an interval, wherein the first silicon core 111 and the second silicon core 112 both comprise a first end 114 and a second end 115 in the axial direction. As shown in fig. 1, the first end 114 is a lower end of the first silicon core 111 and the second silicon core 112, and the second end 115 is an upper end of the first silicon core 111 and the second silicon core 112.
The first ends 114 of the first silicon core 111 and the second silicon core 112 are respectively connected with the first electrode 140 and the second electrode 150 on the chassis 120, the second end 115 is connected with at least two beams 113, two ends of the beam 113 are respectively connected with the first silicon core 111 and the second silicon core 112, the at least two beams 113 are sequentially distributed along the axial direction of the first silicon core 111, and a gap is formed between two adjacent beams 113 in the axial direction of the first silicon core 111.
When the polysilicon reduction furnace 100 of the embodiment is used, the first silicon core 111 and the second silicon core 112 are heated by electrifying the first electrode 140 and the second electrode 150, the mixed hydrogen/trichlorosilane gas enters the reaction chamber 133 from the gas inlet pipe, vapor deposition is performed on the surfaces of the silicon cores of the first silicon core 111 and the second silicon core 112 with high temperature, and the tail gas is discharged from the tail gas pipe 163. Illustratively, the chassis 120 defines an exhaust port that communicates with an exhaust duct 163. In other embodiments, the exhaust port may also be disposed in the enclosure 130.
Because the silicon core structure 110 is provided with the at least two beams 113, the at least two beams 113 are sequentially distributed along the axial direction of the first silicon core 111, and the two adjacent beams 113 have a gap in the axial direction of the first silicon core 111, compared with the scheme of providing one beam 113, the current of a single beam 113 is effectively reduced, so that the temperatures of the second ends 115 of the first silicon core 111 and the second silicon core 112 are effectively reduced, the temperature nonuniformity of the first silicon core 111 and the second silicon core 112 is effectively improved, the deposition speeds of the upper end and the lower end of the first silicon core 111 and the second silicon core 112 tend to be consistent, and the silicon rods with the same upper diameter and lower diameter and density are favorably formed.
In addition, because the silicon core structure 110 is provided with at least two beams 113, the connection stability of the first silicon core 111 and the second silicon core 112 can be improved, the shaking of the first silicon core 111 and the second silicon core 112 can be weakened, the probability of furnace turnover and wall leaning problems in the production process is reduced, and the yield of a single furnace of the reduction furnace is further improved.
In some embodiments, the first electrode 140 and the second electrode 150 are each mounted with a graphite card holder 161, the graphite card holder 161 has a graphite card flap 162, and the first silicon core 111 and the second silicon core 112 are respectively fixed to the graphite card holder 161 by the graphite card flap 162.
The graphite card holder 161 not only has a conductive function, and can electrically connect the first electrode 140 and the first silicon core 111, and the second electrode 150 and the second silicon core 112, but also can firmly fix the first silicon core 111 to the first electrode 140 and firmly fix the second silicon core 112 to the second electrode 150 through the graphite card flap 162.
In some embodiments, at least two beams 113 are disposed in parallel. Illustratively, the distance between two adjacent beams 113 in the axial direction of the first silicon core 111 is 180-800 mm, such as 180mm, 200mm, 250mm, 300mm, 350mm, 400mm, 450mm, 500mm, 550mm, 600mm, 650mm, 700mm, 750mm, or 800 mm.
Illustratively, the distance between two adjacent cross beams 113 in the axial direction of the first silicon core 111 is larger than the diameter of a conventional finished silicon rod.
The second ends 115 of the first silicon core 111 and the second silicon core 112 are connected to at least two beams 113, that is, two beams 113 may be connected, or three, four or more beams 113 may be connected. Optionally, the first silicon core 111 and the second silicon core 112 are provided with a connection hole, and two ends of the beam 113 are fixed to the connection hole to realize connection between the beam 113 and the first silicon core 111 and the second silicon core 112.
In the following description, two beams 113 are provided as an example, wherein two ends of one beam 113 are respectively connected to the ends of the first silicon core 111 and the second silicon core 112 at the second end 115, and two ends of the other beam 113 are respectively connected to the upper parts of the first silicon core 111 and the second silicon core 112.
As shown in FIG. 2, the beam 113 connected to the ends of the first and second silicon cores 111 and 112 at the second end 115 is defined as a second beam, and the beam 113 connected to the upper portions of the first and second silicon cores 111 and 112 is defined as a first beam, wherein the resistance of the second beam is R2 1The resistance of the first beam is R2The resistance of the portion of the first silicon core 111 between the first beam and the second beam is R1The resistance of the portion of the first silicon core 111 between the first beam and the second beam is R1 1The current passing through the second beam is I2The current passing through the first beam is I1。
Wherein,
as can be known from the formula (1) and the formula (2), due to the arrangement of the first beam and the second beam, the whole circuit is a parallel circuit, and the current I of the first beam is1And current I of the second beam2Compared with the scheme of arranging one beam 113, the current of the first beam and the second beam is reduced, so that the temperatures of the upper parts of the first silicon core 111 and the second silicon core 112 are effectively reduced, the temperature nonuniformity of the first silicon core 111 and the second silicon core 112 is effectively improved, the deposition speeds of the upper end and the lower end of the first silicon core 111 and the second silicon core 112 tend to be consistent, and silicon rods with consistent upper diameter, lower diameter and density are favorably formed.
In some embodiments, two adjacent beams 113 of the at least two beams 113, wherein the beam closer to the first end 114113 is larger than the diameter of the beam 113 closer to the second end 115. That is, when the two beams 113 are provided, the diameter of the second beam is larger than that of the first beam, and the current I passing through the first beam can be made by the diameter of the second beam1And the current I passing through the second beam2Are equal in size.
Further, in some embodiments, the cover 130 includes a first housing 131 and a second housing 132, the first housing 131 and the second housing 132 are spaced apart to form a receiving cavity 136, the second housing 132 is disposed closer to the reaction chamber 133, a side wall of the first housing 131 is opened with a cooling liquid inlet 134, and a top wall of the first housing 131 is opened with a cooling liquid outlet 135.
Through the coolant liquid import 134 can let into the coolant liquid to holding cavity 136 inside, then the coolant liquid can flow from coolant liquid export 135, wherein, coolant liquid export 135 can be through pipeline and pumping mechanism intercommunication to realize that the coolant liquid flows in holding cavity 136, the coolant liquid can carry out cooling treatment when flowing in holding cavity 136.
In summary, in the embodiment of the present application, because the silicon core structure 110 is provided with the at least two beams 113, the at least two beams 113 are sequentially distributed along the axial direction of the first silicon core 111, and the two adjacent beams 113 have a gap in the axial direction of the first silicon core 111, compared with the scheme of providing one beam 113, the current of a single beam 113 is effectively reduced, so that the temperatures of the second ends 115 of the first silicon core 111 and the second silicon core 112 are effectively reduced, the temperature non-uniformity of the first silicon core 111 and the second silicon core 112 is effectively improved, the deposition speeds of the upper and lower ends of the first silicon core 111 and the second silicon core 112 tend to be consistent, and the silicon rods with the same upper and lower density and the same density are favorably formed.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. The silicon core structure of the polycrystalline silicon reduction furnace is characterized by comprising a first silicon core and a second silicon core which are arranged in parallel at intervals, wherein the first silicon core and the second silicon core both comprise a first end and a second end in the axial direction, the first end of the first silicon core and the first end of the second silicon core are used for being connected with an electrode on a chassis of the polycrystalline silicon reduction furnace, the second end of the first silicon core and the second end of the second silicon core are connected with at least two cross beams, two ends of each cross beam are respectively connected with the first silicon core and the second silicon core, the at least two cross beams are sequentially distributed in the axial direction of the first silicon core, and a gap is formed between every two adjacent cross beams in the axial direction of the first silicon core.
2. The silicon core structure of a polysilicon reduction furnace according to claim 1, wherein adjacent two of the at least two beams have a diameter that is greater closer to the first end than the diameter of the beam closer to the second end.
3. The silicon core structure of the polysilicon reducing furnace as set forth in claim 1, wherein at least two of the beams are arranged in parallel.
4. The silicon core structure of the polysilicon reducing furnace as set forth in claim 3, wherein a distance between two adjacent beams in an axial direction of the first silicon core is 180-800 mm.
5. The silicon core structure of the polysilicon reducing furnace as set forth in any one of claims 1 to 4, wherein two beams are provided, wherein two ends of one beam are respectively connected to the ends of the first silicon core and the second silicon core at the second end, and two ends of the other beam are respectively connected to the upper portions of the first silicon core and the second silicon core.
6. The silicon core structure of the polysilicon reducing furnace according to any one of claims 1 to 4, wherein the first silicon core and the second silicon core are provided with a connecting hole, and both ends of the beam are fixed to the connecting hole.
7. A polysilicon reduction furnace, comprising:
a chassis;
the cover body is covered on the chassis to form a reaction cavity;
the first electrode and the second electrode are fixed on the chassis;
the silicon core structure of the polysilicon reducing furnace as set forth in any one of claims 1 to 6, wherein the first silicon core and the second silicon core are disposed in the reaction chamber and connected to the first electrode and the second electrode, respectively;
the air inlet pipe is connected to the chassis and arranged in the reaction cavity; and
and the tail gas pipe is communicated with the reaction cavity.
8. The polysilicon reducing furnace according to claim 7, wherein the first electrode and the second electrode are each provided with a graphite clamping seat, the graphite clamping seat is provided with a graphite clamping flap, and the first silicon core and the second silicon core are respectively fixed on the graphite clamping seat through the graphite clamping flap.
9. The polycrystalline silicon reduction furnace according to claim 7, wherein the cover body includes a first housing and a second housing, the first housing and the second housing are spaced apart to form a receiving cavity, the second housing is disposed closer to the reaction chamber, a side wall of the first housing is opened with a coolant inlet, and a top wall of the first housing is opened with a coolant outlet.
10. The polycrystalline silicon reduction furnace according to claim 7, wherein the bottom plate is provided with a tail gas port, and the tail gas port is communicated with the tail gas pipe.
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