CN216386012U - Rod cell type infrared thermal imaging sensor - Google Patents
Rod cell type infrared thermal imaging sensor Download PDFInfo
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- CN216386012U CN216386012U CN202122814795.8U CN202122814795U CN216386012U CN 216386012 U CN216386012 U CN 216386012U CN 202122814795 U CN202122814795 U CN 202122814795U CN 216386012 U CN216386012 U CN 216386012U
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- photoreceptor
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- thermal imaging
- infrared thermal
- passivation film
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- 238000001931 thermography Methods 0.000 title claims abstract description 25
- 108091008695 photoreceptors Proteins 0.000 claims abstract description 35
- 230000005855 radiation Effects 0.000 claims abstract description 32
- 238000002161 passivation Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 15
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 210000001525 retina Anatomy 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The application discloses a rod cell type infrared thermal imaging sensor which is provided with a photoreceptor which is of a three-dimensional structure and sensitive to infrared thermal radiation, the area of the infrared thermal imaging sensor is greatly reduced under the condition that the space area for collecting the thermal radiation is not reduced, and the rod cell type infrared thermal imaging sensor has the characteristics of high resolution and small volume; the top of the rod cell type infrared thermal imaging pixel is provided with a super-surface structure, and the top of the photoreceptor is provided with an antireflection film, so that the pixel can receive more heat radiation, and the infrared sensing performance is improved.
Description
Technical Field
The application relates to the field of image sensors, in particular to a rod cell type infrared thermal imaging sensor.
Background
With the application of infrared thermal imaging sensors to small electronic devices with image sensing or light sensing functions, such as mobile phones, tablet computers or wearable devices, in order to meet the requirement of small volume limitation, the traditional method is to reduce the size of the sensor by reducing the resolution, so that poor application experience is brought to users, and products with small size and high definition are required to be developed to meet the requirements of new generation consumer electronics on the sensor.
Disclosure of Invention
In view of the above, the present application provides a rod cell type infrared thermal imaging sensor.
In order to solve the technical problem, the following technical scheme is adopted in the application:
there is provided a rod cell-type infrared thermal imaging sensor, the sensor comprising:
an integrated circuit substrate;
a plurality of sensor pixels arranged in an array on an integrated circuit substrate;
each pixel comprises a reflecting layer, a supporting body, an electrode layer, a photoreceptor and a passivation film covering the surface of the photoreceptor; the electrode layer, the photoreceptor, and the passivation film are located above the support;
the electrode layer electrically connects the photoreceptor and the support;
the photoreceptor is a three-dimensional structure configured to receive thermal radiation and generate an electrical signal.
Preferably, the photoreceptor has a cylindrical or rectangular parallelepiped structure.
Preferably, the pixel further includes an anti-reflection film disposed between the photoreceptor and the passivation film.
Preferably, the number of the supports is at least two.
Preferably, the passivation film on the upper surface of the photoreceptor has a super surface structure.
Preferably, the super-surface structure comprises a multi-cylinder convex structure or a multi-stage stepped concentric ring belt structure.
Compared with the prior art, the method has the following beneficial effects:
based on the technical scheme, the rod cell type infrared thermal imaging sensor is provided with the three-dimensional photosensitive body sensitive to infrared thermal radiation, so that the area of the infrared thermal imaging sensor is greatly reduced under the condition that the space area for collecting thermal radiation is not reduced, and the rod cell type infrared thermal imaging sensor has the characteristics of high resolution and small volume; the top of the rod cell type infrared thermal imaging pixel is provided with a super-surface structure, and the top of the photoreceptor is provided with an antireflection film, so that the pixel can receive more heat radiation, and the infrared sensing performance is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic diagram of a rod cell type infrared thermal imaging pixel provided in an embodiment of the present application.
Fig. 2 is a schematic diagram of a rod cell type infrared thermal imaging sensor according to an embodiment of the present disclosure.
Fig. 3 is a schematic diagram of an arrangement manner of a pixel array according to an embodiment of the present application.
Fig. 4 is a schematic diagram of another arrangement of a pixel array according to an embodiment of the present application.
FIG. 5 is a cross-sectional view of a rod-type infrared thermographic image element provided in an embodiment of the present application.
Fig. 6 is a schematic view of an incident light according to an embodiment of the present application.
FIG. 7 is a cross-sectional view of another rod-type infrared thermographic image element provided in the examples of the present application.
Fig. 8 is a schematic diagram of a super-surface structure of a passivation film provided in an embodiment of the present application.
FIG. 9 is a cross-sectional view of another rod-type infrared thermographic image element provided in the examples of the present application.
In the drawings, the names of the components denoted by the respective reference numerals are as follows: 10. pixel, 20, integrated circuit substrate, 101, reflective layer, 102, support, 103, photoreceptor, 104, electrode layer, 105, passivation film, 106, super surface structure, 107, anti-reflection film.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element.
Before the technical solutions provided in the present application are introduced, rod cells are first introduced.
The rod cell is a type of visual cell, and is located in the retina, and about 12000 ten thousand rod cells exist in the retina of a human. Rod-shaped bodies of rod-shaped cells are elongated cylinders, about 40 to 60 microns long and about 2 microns in diameter. The rod cells have photosensitive substances, and under the stimulation of light, the photosensitive substances can generate a series of photochemical changes and potential changes, so that the rod cells send out nerve impulses.
Fig. 1 is a schematic diagram of a rod cell type infrared thermal imaging pixel provided in an embodiment of the present application.
Fig. 2 is a schematic diagram of a rod cell type infrared thermal imaging sensor according to an embodiment of the present disclosure.
Referring to fig. 1 and 2, a rod cell type infrared thermal imaging sensor provided by an embodiment of the present application includes a plurality of sensor pixels 10 arranged in an array and an integrated circuit substrate 20 located under the pixels.
The integrated circuit substrate 20 includes readout circuitry for signal acquisition and data processing.
Fig. 3 and 4 are schematic diagrams of pixel array arrangement provided in an embodiment of the present application, and referring to fig. 3 and 4, the rod-shaped infrared thermal imaging sensor includes a plurality of pixels 10 arranged in an array, where the pixel array may be arranged in a regular rectangular array, and the pixel array may also be arranged in a staggered row-column manner.
FIG. 5 is a cross-sectional view of a rod-type infrared thermographic image element provided in an embodiment of the present application.
Referring to fig. 5, the pixel 10 specifically includes a reflective layer 101, a support 102, a photoreceptor 103, an electrode layer 104, and a passivation film 105.
The reflective layer 101 is used for reflecting infrared rays to the photoreceptor 103 in the pixel 10, and a resonant cavity is formed in a space between the upper surface of the reflective layer 101 and the lower surface of the passivation film 105 (the contact surface of the passivation film 105 and the support 102), and the height of the resonant cavity is set to be greater than or equal to 1 micrometer and less than or equal to 2.5 micrometers.
Specifically, the absorption rate of the pixel to infrared radiation can be improved by adjusting the height of the optical resonant cavity, part of incident infrared radiation energy can penetrate through the photosensitive body 103, an infrared reflecting layer 101 is formed below the photosensitive body 103, and the infrared radiation energy projected from the upper side can be reflected back to the photosensitive body 103 by the reflecting layer 101 for secondary absorption.
The support 102 serves to support the assembly of the upper photosensitive member 103, the electrode layer 104, and the passivation film 105, and the lower surface of the support 102 may be connected to the reflective layer 101 without contacting the integrated circuit substrate 20, or the support 102 may be connected to the integrated circuit substrate 20, that is, embedded in the reflective layer 101.
The upper surface of the support 102 is at least partially connected to an electrode layer 104 for leading out an electrical signal generated by the photoreceptor 103 changing resistance upon receiving thermal radiation, so that the integrated circuit substrate 20 reads out or processes the electrical signal.
The support 102 also serves as a heat sink, and after the photoreceptor 103 absorbs infrared radiation, it needs to transmit heat to the integrated circuit substrate 20 through the support 102 below to dissipate heat, so as to prepare for the next temperature measurement.
The photosensitive body 103 is a core component of the infrared thermal imaging sensor, and can receive electromagnetic radiation in a spectral range corresponding to thermal radiation, such as electromagnetic waves with a wavelength of 3.5 micrometers to 14 micrometers, reflected by an external environmental object through an optical window outside the sensor, and the photosensitive body 103 generates a changed resistance after receiving the thermal radiation, so that a thermal radiation signal is converted into an electrical signal form.
The photoreceptor 103 may be a heat sensitive material sensitive to thermal radiation, and may specifically be vanadium oxide, titanium oxide, silicon, a ferroelectric material, graphene, mercury cadmium telluride, or a combination thereof. Correspondingly, the infrared thermal imaging sensor can be a vanadium oxide sensor, a titanium oxide sensor or an amorphous silicon sensor, and the infrared detector can also be a thermopile sensor.
The photosensitive body 103 has a three-dimensional structure, and specifically, the photosensitive body 103 may be a cylinder or a rectangular parallelepiped.
The maximum width of the longitudinal sectional view of the photosensitive body 103 may be set to be 1 to 10 micrometers, and the height may be set to be a quarter of a wavelength according to a wavelength range of electromagnetic waves corresponding to collected thermal radiation, so as to play an anti-reflection characteristic, reduce energy loss caused by reflection of thermal radiation, and allow the photosensitive body 103 to receive thermal radiation as much as possible, so as to improve the infrared sensing performance of the sensor.
The electrode layer 104 provides electrical connection between the photoreceptor 103 and the support 102, and the contact point between the electrode layer 104 and the photoreceptor 103 may be located at any position on the surface of the photoreceptor 103, and typically, the contact point between the electrode layer 104 and the photoreceptor 103 may be located on the lower surface of the photoreceptor 103. It should be noted that the present application does not limit the shape of the electrode layer in the rod cell type infrared thermal imaging pixel provided in the examples.
The contact point of the electrode layer 104 and the support 102 may be located on the upper surface or the side surface of the support 102, so that the plurality of supports 102 transmit positive and negative signals of the electrical signal to the integrated circuit substrate 20, respectively, by providing electrical connection for the photosensitive body 103 and the support 102, and the integrated circuit substrate 20 realizes non-contact infrared temperature detection by analyzing the acquired electrical signal.
The passivation film 105 covers the outer surface of the photoreceptor 103, and protects the photoreceptor from oxidation or corrosion over time. The passivation film 105 also covers the electrode layer 104 so that the electrode layer 104 is not exposed, and the electrode layer 104 is located in the passivation film 105 to provide electrical connection between the photosensitive layer and the support 102. The material of the passivation film 105 may be one or a combination of silicon oxide, silicon nitride, silicon oxynitride, or amorphous carbon.
Incident light is incident from the top of the photosensitive body 103, the passivation film 105 penetrating the top of the photosensitive body is absorbed by the photosensitive body 103, since the material of the photosensitive body 103 is sensitive to thermal radiation, a varying resistance is generated, the thermal radiation is converted into electricity, an electric signal is transmitted to the integrated circuit substrate 20 through the electrode layer 104 via the support 102, and each part of the electric circuit in the integrated circuit substrate 20 reads, converts and processes the electric signal to form an infrared image pixel.
In some cases, referring to fig. 6, a portion of incident heat radiation is difficult to be received by the photoreceptor due to having a relatively limited incident angle, and in order to improve heat radiation absorption rate and improve infrared sensing performance, in some embodiments, the passivation film 105 of the upper surface of the photoreceptor 103 in the pixel is provided with a super surface structure.
FIG. 7 is a cross-sectional view of another rod-type infrared thermographic image element provided in an embodiment of the present application.
Fig. 8 is a schematic diagram of a super-surface structure of a passivation film provided in an embodiment of the present application.
Referring to fig. 7 and 8, the passivation film 105 on the upper surface of the photosensitive body 103 is provided with a super surface structure 106, the super surface structure 106 may be a micro-cylinder array structure, the top of the cylinder may be a plane or a cambered surface, and may also be a fresnel lens structure, and may also be a multi-step relief structure or a continuous relief structure similar thereto, and a concentric ring structure is shown in a top view. The material of the super-surface structure 106 may be one or a combination of silicon oxide, silicon nitride, silicon oxynitride, or amorphous carbon.
The purpose of the passivation film 105 on the upper surface of the photosensitive body 103 being provided with the super surface structure 106 is that the pixel including the super surface structure 106 can receive more heat radiation than the pixel without the super surface structure, has a higher heat radiation absorption rate, and thus the sensor has a more sensitive sensing performance.
It should be noted that, the present application does not limit the specific shape and physical structure of the super-surface structure 106, and all super-surface structures having the same function should be regarded as simple modifications, equivalent changes and modifications, and shall fall within the protection scope of the present invention.
In some embodiments, pixel 10 can also include an anti-reflective film.
FIG. 9 is a cross-sectional view of another rod-type infrared thermographic image element provided in an embodiment of the present application.
Referring to fig. 9, the top of the photoreceptor 103 is covered with an anti-reflective film 107, the anti-reflective film 107 being located between the top of the top-passivation-film photoreceptor 103. The anti-reflection film 107 is used for increasing the transmittance of heat radiation incident from the top, so that more incident heat radiation enters the photosensitive body 103 and is absorbed by the photosensitive body 103, the reflection of the incident heat radiation on the upper surface of the photosensitive body 103 is reduced, the pixel can receive more heat radiation, and the sensor has higher heat radiation absorption rate, so that the sensor has more sensitive sensing performance.
The rod cell type infrared thermal imaging sensor provided by the present application may be mounted in an electronic device having an image sensing function and/or a light sensing function. For example, the device may be installed in electronic devices such as smartphones, cameras, internet of things (IoT) devices, tablet Personal Computers (PCs), Personal Digital Assistants (PDAs), Portable Multimedia Players (PMPs), navigation devices, drones, and Advanced Driver Assistance Systems (ADAS). In addition, the device may be provided as an element in vehicles, furniture, manufacturing equipment, various measuring equipment, and the like.
The foregoing is only a preferred embodiment of the present invention, and although the present invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (6)
1. A rod cell-type infrared thermal imaging sensor, the sensor comprising:
an integrated circuit substrate;
a plurality of sensor pixels arranged in an array on an integrated circuit substrate;
each pixel comprises a reflecting layer, a supporting body, an electrode layer, a photoreceptor and a passivation film covering the surface of the photoreceptor;
the electrode layer, the photoreceptor, and the passivation film are located above the support;
the electrode layer electrically connects the photoreceptor and the support;
the photoreceptor is a three-dimensional structure configured to receive thermal radiation and generate an electrical signal.
2. The sensor of claim 1, wherein the photosensitive body has a cylindrical or rectangular parallelepiped structure.
3. The sensor of claim 1, wherein the pixel further comprises an anti-reflective film disposed between the photoreceptor and the passivation film.
4. The sensor of claim 1, wherein the number of supports is at least two.
5. The sensor according to claim 1, wherein the passivation film on the upper surface of the photoreceptor has a super surface structure.
6. The sensor of claim 5, wherein the super-surface structure comprises a multi-cylinder convex structure or a multi-stage stepped concentric ring band structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122814795.8U CN216386012U (en) | 2021-11-17 | 2021-11-17 | Rod cell type infrared thermal imaging sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122814795.8U CN216386012U (en) | 2021-11-17 | 2021-11-17 | Rod cell type infrared thermal imaging sensor |
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| CN216386012U true CN216386012U (en) | 2022-04-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113984218A (en) * | 2021-11-17 | 2022-01-28 | 合肥芯福传感器技术有限公司 | Rod-type infrared thermal imaging sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113984218A (en) * | 2021-11-17 | 2022-01-28 | 合肥芯福传感器技术有限公司 | Rod-type infrared thermal imaging sensor |
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