CN216351768U - Regeneration photoetching mask plate based on recovery processing - Google Patents
Regeneration photoetching mask plate based on recovery processing Download PDFInfo
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- CN216351768U CN216351768U CN202122610680.7U CN202122610680U CN216351768U CN 216351768 U CN216351768 U CN 216351768U CN 202122610680 U CN202122610680 U CN 202122610680U CN 216351768 U CN216351768 U CN 216351768U
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- recycled
- photoetching
- photoetching mask
- transparent
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- 238000001259 photo etching Methods 0.000 title claims abstract description 27
- 238000012545 processing Methods 0.000 title claims description 10
- 238000011084 recovery Methods 0.000 title claims description 10
- 230000008929 regeneration Effects 0.000 title claims description 6
- 238000011069 regeneration method Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 17
- 239000011651 chromium Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 27
- 239000011241 protective layer Substances 0.000 claims description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 7
- 238000004064 recycling Methods 0.000 abstract description 6
- 238000010023 transfer printing Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The utility model discloses a recycled photoetching mask plate based on recycling treatment, which comprises a scrapped photoetching mask plate, wherein the scrapped photoetching mask plate is recycled to obtain a substrate, the substrate obtained after the recycling treatment comprises a first surface and a second surface, the roughness of the first surface and the roughness of the second surface are less than or equal to 0.5nm, a transparent compensation layer is arranged on the first surface or the second surface, the total thickness of the substrate and the transparent compensation layer is the thickness of an original substrate, a chromium layer is arranged on the transparent compensation layer, and the chromium layer contains transfer printing patterns, so that the recycled photoetching mask plate is obtained. The manufacturing is simple, the performance of the obtained regenerated photoetching mask is basically the same as that of the original mask, namely, the light path of the mask in the ultraviolet exposure process is kept unchanged, the stable photoetching process is facilitated, and the production defects are reduced. And the resources can be reused, so that the manufacturing cost can be greatly reduced.
Description
Technical Field
The utility model belongs to the technical field of photoetching masks, and particularly relates to a regenerated photoetching mask based on recovery processing.
Background
In the prior art of semiconductor lithography, because the mask is used repeatedly very frequently, defects of the mask are introduced in the process due to repeated use, all defects on the mask need to be repaired by a repairing method and cleaning after the mask is made, and the repair of defects of a mask pattern is a key step for manufacturing a high-quality mask, however, sometimes, the problem of damage to a mask substrate such as a quartz substrate may be caused by over-repair of the mask.
Therefore, when a certain defect rate is reached, the membrane plate cannot be used continuously, generally, after the membrane plate reaches a certain service life, the membrane plate is scrapped directly by a production line, the process line is designed to keep the chip technology secret, the general scrapping mode is to directly damage the membrane plate by adopting an acid washing mode, and finally, the scrapped plate is placed in a warehouse without a limit. This type of scrapping results in a large amount of wasted resources for the mask glass for the entire semiconductor industry.
For example, the utility model patent with publication number CN 101149570a discloses a method for recovering and treating a photomask after removing a metal chromium film, which comprises the steps of removing the metal chromium film on the photomask by etching the photomask containing the recovered metal chromium film, cleaning and drying the photomask, detecting the surface state of the photomask, grinding and removing chemical components and foreign matters possibly remaining on the surface of the photomask, cleaning and drying the ground photomask, and finally checking to meet the standard to reduce the photomask into a finished product before processing. However, the thickness of the photomask is reduced after the photomask is ground, so that the light path of the mask plate in the ultraviolet exposure process cannot be guaranteed to be unchanged, and the stability of the photoetching process is not facilitated.
SUMMERY OF THE UTILITY MODEL
In view of the above technical problems, the present invention aims to: the regenerated photoetching mask based on recycling treatment is simple to manufacture, the performance of the obtained regenerated photoetching mask is basically the same as that of the original mask, namely, the original thickness of the mask is basically maintained, so that the light path in the ultraviolet exposure process is unchanged, the photoetching process is favorably stabilized, and the production defects are reduced. And the resources can be reused, so that the manufacturing cost can be greatly reduced.
The technical scheme of the utility model is as follows:
the utility model provides a regeneration photoetching mask version based on recovery processing, is including condemned photoetching mask version, condemned photoetching mask version obtains the base plate after recovery processing, the base plate that obtains after recovery processing includes first surface and second surface, the roughness on first surface and second surface is less than or equal to 0.5nm, be provided with transparent compensation layer on first surface or the second surface, the gross thickness of base plate and transparent compensation layer is original substrate thickness, set up the chromium layer on the transparent compensation layer, the chromium layer contains the rendition pattern, obtains regeneration photoetching mask version.
In a preferred technical scheme, the transparent compensation layer is aluminum oxide.
In a preferred technical scheme, a transparent protective layer is arranged on the chromium layer, and the Mohs hardness of the transparent protective layer is more than 8.0.
In a preferred technical scheme, the thickness of the transparent protective layer is 100-200 nm.
In a preferred technical scheme, the transparent protective layer is aluminum oxide.
In a preferred technical scheme, a blue film protective layer is arranged on the surface of the regenerated photoetching mask plate.
In the preferred technical scheme, the plane parallelism of the first surface and the second surface is less than or equal to 10 um.
Compared with the prior art, the utility model has the advantages that:
the regenerated photoetching mask is simple to manufacture, the performance of the obtained regenerated photoetching mask is basically the same as that of the original mask, namely, the original thickness of the mask is maintained, so that the light path in the ultraviolet exposure process is unchanged, the photoetching process is favorably stabilized, and the production defects are reduced. And the resources can be reused, so that the manufacturing cost can be greatly reduced. The transparent protective layer can improve the scratch resistance protection of the mask chromium layer of the photoetching mask, thereby prolonging the service life of the mask.
Drawings
The utility model is further described with reference to the following figures and examples:
FIG. 1 is a schematic view of a substrate subjected to a recycling process according to the present invention;
FIG. 2 is a schematic structural diagram of a recycled photolithographic reticle based on a recycling process.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Example (b):
as shown in fig. 1, a recycled photolithographic mask comprises a scrapped photolithographic mask, the scrapped photolithographic mask is recycled to obtain a substrate 10, and the chemical components and foreign matters possibly remaining on the surface of the recycled photolithographic mask are removed by grinding and polishing to ensure that the substrate is flat and completely clean, and the thickness of the substrate obtained after the recycling is generally lower than the original size. The recycled substrates are not generally used as recycled photolithographic masks, which results in significant waste.
The substrate 10 obtained after the recovery treatment comprises a first surface 11 and a second surface 12, and the roughness of the first surface 11 and the second surface 12 is less than or equal to 0.5 nm. Can be obtained by CMP chemical mechanical polishing.
Preferably, in order to further improve the surface quality of the photolithography mask, the plane parallelism of the first surface 11 and the second surface 12 is less than or equal to 10 um.
As shown in fig. 2, a transparent compensation layer 14 is disposed on the first surface 11 or the second surface 12, such that the total thickness of the substrate 10 and the transparent compensation layer 14 is the original substrate thickness, a chromium layer 15 is disposed on the transparent compensation layer 14, and the chromium layer 15 contains a transfer pattern, thereby obtaining a regenerated photolithography mask 20.
The transparent compensation layer 14 can compensate the thickness, and can improve the surface quality of the photolithography mask plate due to the scratch resistance of the substrate surface.
The transparent compensation layer 14 can be made of any suitable transparent material known to those skilled in the art, and in the present embodiment, the transparent compensation layer 14 is preferably aluminum oxide, which has both transparent and hard characteristics, so as to ensure damage caused by insufficient hardness of the material. The transparent compensation layer 14 may be formed using a method such as chemical vapor deposition, sputtering, or the like.
The specific method comprises the following steps:
and testing the thickness difference between the substrate and the original size, and plating aluminum oxide on one side or two sides of the substrate by a sputtering method so that the total thickness of the substrate 10 and the transparent compensation layer 14 is the original substrate thickness.
In a preferred embodiment, in order to protect the transferred pattern of the chromium layer 15 from being scratched during the storage of the chromium plate, a transparent protective layer 16 is further disposed on the chromium layer 15, and the mohs hardness of the transparent protective layer 16 is greater than 8.0.
In a preferred embodiment, the thickness of the transparent protective layer 16 is 100 nm and 200 nm.
The transparent protective layer 16 can be made of any transparent material with scratch resistance known to those skilled in the art, and in this embodiment, the transparent protective layer 16 is preferably aluminum oxide.
In a preferred embodiment, in order to further protect the regenerated photolithography mask 20 from damage during storage and transportation, the surface of the regenerated photolithography mask 20 is provided with a blue film protective layer 17. The blue film protective layer 17 can be made of a surface protective material with a PVC film as a base material, and can be made of a special acrylic adhesive, so that the blue film protective layer is convenient to adhere and tear.
Finally, the photolithographic mask 20 can be placed in a vacuum-pumped plastic bag for storage for subsequent plate making, thereby avoiding surface contamination and scratching during subsequent use.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the utility model and are not to be construed as limiting the utility model. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (7)
1. The utility model provides a regeneration photoetching mask version based on recovery processing, is including condemned photoetching mask version, condemned photoetching mask version obtains the base plate after recovery processing, a serial communication port, the base plate that obtains after recovery processing includes first surface and second surface, the roughness on first surface and second surface is less than or equal to 0.5nm, be provided with transparent compensation layer on first surface or the second surface, the gross thickness of base plate and transparent compensation layer is original substrate thickness, set up the chromium layer on the transparent compensation layer, the chromium layer contains the rendition pattern, obtains regeneration photoetching mask version.
2. The recycled photolithographic reticle defined in claim 1, wherein the transparent compensation layer is aluminum oxide.
3. The recycled photolithographic reticle defined in claim 1, wherein the chromium layer is provided with a transparent protective layer having a mohs hardness greater than 8.0.
4. The recycling-process-based recycled photolithography reticle defined in claim 3, wherein the transparent protective layer has a thickness of 100 nm and 200 nm.
5. The recycled photolithographic reticle defined in claim 3 or claim 4, wherein the transparent protective layer is aluminum oxide.
6. The recycling-process-based regenerated photolithographic reticle defined in any one of claims 1-3, wherein the surface of the regenerated photolithographic reticle is provided with a blue film protective layer.
7. The recycling-process-based recycled photolithographic reticle defined in claim 1, wherein the first and second surfaces have a plane parallelism of ≤ 10 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122610680.7U CN216351768U (en) | 2021-10-27 | 2021-10-27 | Regeneration photoetching mask plate based on recovery processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122610680.7U CN216351768U (en) | 2021-10-27 | 2021-10-27 | Regeneration photoetching mask plate based on recovery processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216351768U true CN216351768U (en) | 2022-04-19 |
Family
ID=81131629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122610680.7U Active CN216351768U (en) | 2021-10-27 | 2021-10-27 | Regeneration photoetching mask plate based on recovery processing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216351768U (en) |
-
2021
- 2021-10-27 CN CN202122610680.7U patent/CN216351768U/en active Active
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