CN216251116U

CN216251116U - Expandable millimeter wave phased array unit and active antenna array surface

Info

Publication number: CN216251116U
Application number: CN202122807933.XU
Authority: CN
Inventors: 季宏凯; 王蕴玉; 刘元昆; 赵丁雷; 朱国振; 邱宇; 刘娟; 刘勇
Original assignee: CETC 38 Research Institute
Current assignee: CETC 38 Research Institute
Priority date: 2021-11-15
Filing date: 2021-11-15
Publication date: 2022-04-08
Anticipated expiration: 2031-11-15

Abstract

The utility model discloses an expandable millimeter wave phased-array unit and an active antenna array surface, which comprise a first layer of glass substrate, a second layer of glass substrate and a dielectric layer which are sequentially arranged from top to bottom, wherein a semiconductor device layer is arranged in the second layer of glass substrate; the antenna and the radio frequency active circuit are integrated together to form the on-chip antenna, and the quartz glass is used as the substrate of the antenna, so that the high-precision millimeter wave unit has the advantages of low dielectric constant, compatibility with a semiconductor process and the like, and meets the high-precision processing requirement of the millimeter wave unit; compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by a bonding wire for connecting the antenna and a circuit are reduced, and interconnection loss is reduced.

Description

Expandable millimeter wave phased array unit and active antenna array surface

Technical Field

The utility model relates to the field of antennas, in particular to an expandable millimeter wave phased array unit and an active antenna array plane.

Background

At present, phased array radars are developing towards miniaturization, lightness, thinness and high integration, and especially under the condition of limited space, the traditional active antenna array surface has various defects. The antenna unit and the TR component of the traditional active antenna array surface transmit signals through radio frequency cables and other modes, the occupied size is large, the distance of a feeder line is long, the loss is large, the millimeter wave wavelength is short, the space between half-wavelength units of a millimeter wave phased array radar is difficult to realize in the traditional active antenna array surface packaging mode, and the antenna array surface is highly integrated and light and thin. And the traditional active antenna array surface is difficult to expand the number of array units, and when the number of antenna units is large, the cost is high, and the reliability is low.

In view of the above-mentioned drawbacks, the inventors of the present invention have finally obtained the present invention through a long period of research and practice.

SUMMERY OF THE UTILITY MODEL

In order to solve the technical defects, the utility model adopts the technical scheme that an expandable millimeter wave phased-array unit is provided and comprises a first layer of glass substrate, a second layer of glass substrate and a dielectric layer which are sequentially arranged from top to bottom, wherein a semiconductor device layer is arranged in the second layer of glass substrate, a plurality of antenna units are arranged on the end face, away from the second layer of glass substrate, of the first layer of glass substrate, a plurality of BGA arrays are arranged on the end face, away from the second layer of glass substrate, of the dielectric layer, and the BGA arrays are connected with the semiconductor device layer and the antenna units; the semiconductor device layer includes active or passive chips.

Preferably, a plurality of glass substrates are further arranged between the first layer of glass substrate and the second layer of glass substrate.

Preferably, the thicknesses of the first layer of glass substrate, the second layer of glass substrate and the glass substrate are not less than 100 um.

Preferably, the dielectric layer is provided with a first dielectric layer and a second dielectric layer, two end faces of the second dielectric layer are respectively provided with a plurality of first redistribution layers and a plurality of second redistribution layers, and the first redistribution layers are arranged between the first dielectric layer and the second dielectric layer.

Preferably, the expandable millimeter wave phased-array unit is further provided with a TGV through hole, the TGV through hole penetrates through the first layer of glass substrate, the second layer of glass substrate and the dielectric layer, and two ends of the TGV through hole are respectively connected with the antenna unit and the second redistribution layer.

Preferably, a first via hole is formed in the first dielectric layer in a penetrating manner, a second via hole is formed in the second dielectric layer in a penetrating manner, two ends of the first via hole are respectively connected with the semiconductor device layer and the first redistribution layer, and two ends of the second via hole are respectively connected with the first redistribution layer and the second redistribution layer.

Preferably, be provided with in the second floor glass substrate and place the chamber, the semiconductor device layer sets up place the intracavity, the degree of depth of placing the chamber is greater than 100 um.

Preferably, the dielectric layer is made of silicon dioxide, polyimide and benzocyclobutene, and the single-layer thickness is 5-10 um.

Preferably, the active antenna array surface comprises a plurality of the expandable millimeter wave phased array units, and each expandable millimeter wave phased array unit is attached to a PCB through the BGA array surface.

Compared with the prior art, the utility model has the beneficial effects that: the antenna and the radio frequency active circuit are integrated together to form the on-chip antenna, and the quartz glass is used as the substrate of the antenna, so that the high-precision millimeter wave unit has the advantages of low dielectric constant, compatibility with a semiconductor process and the like, and meets the high-precision processing requirement of the millimeter wave unit; compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by a bonding wire for connecting the antenna and a circuit are reduced, and interconnection loss is reduced.

Drawings

Fig. 1 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S1;

fig. 2 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S2;

fig. 3 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S3;

fig. 4 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S4;

fig. 5 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S5;

fig. 6 is a view of the structure of the active antenna array.

The figures in the drawings represent:

101 a second glass substrate; 102 a first layer of glass substrate; 103a first dielectric layer; 103b a second dielectric layer; 104 a-a first antenna element; 104 b-a second antenna element; 104 c-a third antenna element; 104 d-a fourth antenna element; 105 a-a first BGA array; 105 b-a second BGA array; 130-a semiconductor device layer; 140-a via; 150-a rewiring layer; 301-PCB board.

Detailed Description

The above and further features and advantages of the present invention are described in more detail below with reference to the accompanying drawings.

Example one

The expandable millimeter wave phased-array unit comprises a first glass substrate layer 102, a second glass substrate layer 101, a first dielectric layer 103a and a second dielectric layer 103b which are sequentially arranged from top to bottom, a semiconductor device layer 130 is arranged in the second glass substrate layer 101, and a plurality of antenna units are arranged on the end face, away from the second glass substrate layer 101, of the first glass substrate layer 102.

The semiconductor device layer 130 (shown as an integrated circuit chip in fig. 1) is above the dielectric layer 103a, the first layer of glass 101 is above the second layer of glass 102, and the second layer of glass 101 is above the dielectric layer 103a, for embedding the semiconductor layer 130 in the second layer of glass 101.

In the present embodiment, the antenna elements include a first antenna element 104a, a second antenna element 104b, a third antenna element 104c, and a fourth antenna element 104d, and although only 4 antenna elements 104a to 104d are illustrated in the drawing, the number of antenna elements of the phased array element is actually greater than or less than 4.

Preferably, a plurality of glass substrates are further disposed between the first glass substrate 102 and the second glass substrate 101.

Be provided with in the second floor glass substrate 101 and place the chamber, semiconductor device layer 130 sets up place the intracavity, the degree of depth of placing the chamber is greater than 100um, in order to ensure semiconductor device layer 130 can bury in the second floor glass substrate 101.

The semiconductor device layer 130 includes active or passive chips.

The dielectric layer is made of silicon dioxide (SiO2), Polyimide (PI), benzocyclobutene (BCB) or other common semiconductor materials with similar insulating functions, and the single-layer thickness of the dielectric layer is 5-10 um.

Preferably, the thickness of the layer of glass substrate, the thickness of the second layer of glass substrate and the thickness of the glass substrate are greater than 100 um.

A plurality of first redistribution layers and a plurality of second redistribution layers are respectively arranged on two end faces of the second dielectric layer 103b, and the first redistribution layers are arranged between the first dielectric layer 103a and the second dielectric layer 103 b.

The expandable millimeter wave phased-array unit is further provided with a TGV through hole, the TGV through hole penetrates through the first layer of glass substrate 102, the second layer of glass substrate 101, the first layer of dielectric layer 103a and the second layer of dielectric layer 103b, and two ends of the TGV through hole are respectively connected with the antenna unit and the second redistribution layer.

A first via hole is arranged on the first dielectric layer 103a in a penetrating manner, a second via hole is arranged on the second dielectric layer 103b in a penetrating manner, two ends of the first via hole are respectively connected with the semiconductor device layer 130 and the first rewiring layer, and two ends of the second via hole are respectively connected with the first rewiring layer and the second rewiring layer.

The second dielectric layer 103b is further provided with a BGA array.

The TGV penetrates through the glass substrate to electrically connect the chip pins with the antenna unit; and the rewiring layer leads out the chip pins, is connected with the antenna unit on one hand and is connected with the BGA array on the back side on the other hand.

Two TGV

vias

120a and 120b connect antenna element 104a and antenna element 104d with redistribution layer 150. The TGV vias pass through both

glass layers

101 and 102, and both

dielectric layers

103a and 103 b.

Fig. 1 shows only the

antenna elements

104a and 104d connected to the TGV vias, but in practice each antenna element would need to be connected to a TGV via and then to the redistribution layer 150. The semiconductor device layer 130 is connected to the redistribution layer 150 through the via 140. The vias 140 pass through the

dielectric layers

103a and 103 b.

Dielectric layer 103a is below second glass layer 101 and completely covers semiconductor device layer 130, and dielectric layer 103b is below dielectric layer 103 a. Although fig. 1 shows only two

dielectric layers

103a and 103b, the number of the dielectric layers is actually 1 or more. The

BGA arrays

105a and 105b are connected to the redistribution layer 150 and to the semiconductor device layer through vias 140 as input and output ports of the phased array unit. Although fig. 1 shows only 2 first BGA arrays 105a and second BGA arrays 105b, the actual number of BGAs is determined by the number of input/output ports of the phased array unit.

The

dielectric layers

103a and 103b are made of silicon dioxide (SiO2), Polyimide (PI), benzocyclobutene (BCB) or other common semiconductor materials with similar insulating functions, and the single-layer thickness is 5 to 10 um. The semiconductor layer 130 may be an integrated circuit chip, a passive device, an active device, or the like. Although fig. 1 shows only 1 semiconductor chip, the actual number of chips is 1 or more.

Each glass layer is approximately 100um thick and the lower surface of the first glass layer acts as a ground plane for the antenna element. The second glass layer 101 is etched to form a cavity for placing the semiconductor layer 130.

The utility model has simple structure and low cost, can be manufactured in large scale, can realize the active antenna array surface with high precision and high consistency, and realizes the high-efficiency production of the phased array unit by utilizing the semiconductor process. The section thickness of the phased array unit is reduced, the minimum thickness of the whole phased array unit is only 0.3mm, and the miniaturization of the phased array unit is realized. The back surface of the phased array unit is led out of the input and output port through the BGA array, the traditional connector is replaced, the expandability of the phased array unit and the convenience of application are improved, the phased array unit and a rear-end PCB can be quickly integrated, and a large-scale active antenna array surface is formed. The quartz glass is used as the antenna substrate, and has the advantage of low dielectric constant, so that the antenna performance can be improved.

Example two

The preparation method of the expandable millimeter wave phased array unit comprises the following steps:

in the step shown in fig. 1, TGV

vias

120a and 120b are formed on the first glass layer 102.

In the step shown in fig. 2, the antenna elements 104a to 104d are prepared above the first glass layer 102.

In the step shown in fig. 3, the second glass layer 102 is bonded to the first glass layer 101 by bonding and a cavity is formed in the second glass layer 101 and TGV vias 120a and 120b are formed in the second glass layer 101 and aligned with the TGV vias in the first glass layer.

In the step shown in fig. 4, the semiconductor layer 130 is placed in the cavity of the second glass layer 101 and adhered to the back of the first glass layer 102, and the dielectric layer 103a is formed on the lower surface of the second glass layer, and a via hole is etched at a position to be connected, and the surface of the semiconductor layer 130 is covered.

In the step shown in fig. 5, a dielectric layer 103b is formed, and via holes 140 and a redistribution layer 150 are formed to connect pads of the semiconductor device with the redistribution layer, and finally

BGA arrays

105a and 105b are formed on the lower surface of 103 b.

Fig. 6 schematically shows a structural diagram of a scalable millimeter wave phased array element constituting a large-scale active front. The different expandable phased array units are attached to the PCB board 301 by the

back BGA arrays

105a and 105b to form a large scale active front. The spacing of the different phased array elements needs to meet the array antenna element spacing requirements.

Further, the PCB 301 includes a power distribution network, a power interface, and the like.

The extensible phased array unit integrates the antenna and the radio frequency active circuit to form an on-chip antenna, and quartz glass is used as a substrate of the antenna, so that the extensible phased array unit has the advantages of low dielectric constant, compatibility with a semiconductor process and the like, and meets the high-precision processing requirement of the millimeter wave unit. Compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by a bonding wire for connecting the antenna and a circuit are reduced, and interconnection loss is reduced.

The foregoing is merely a preferred embodiment of the utility model, which is intended to be illustrative and not limiting. It will be understood by those skilled in the art that various changes, modifications and equivalents may be made therein without departing from the spirit and scope of the utility model as defined in the appended claims.

Claims

1. A scalable millimeter wave phased-array unit is characterized by comprising a first layer of glass substrate, a second layer of glass substrate and a dielectric layer which are sequentially arranged from top to bottom, wherein a semiconductor device layer is arranged in the second layer of glass substrate, a plurality of antenna units are arranged on the end face, away from the second layer of glass substrate, of the first layer of glass substrate, a plurality of BGA arrays are arranged on the end face, away from the second layer of glass substrate, of the dielectric layer, and the BGA arrays are connected with the semiconductor device layer and the antenna units; the semiconductor device layer includes active or passive chips.

2. The scalable millimeter-wave phased-array unit of claim 1, further comprising a plurality of glass substrates disposed between the first glass substrate and the second glass substrate.

3. The scalable millimeter-wave phased-array unit of claim 2, wherein the first layer of glass substrate, the second layer of glass substrate, and the glass substrate have a thickness of not less than 100 um.

4. The scalable millimeter wave phased array unit according to claim 1, wherein the dielectric layer is provided with a first dielectric layer and a second dielectric layer, both end surfaces of the second dielectric layer are respectively provided with a plurality of first redistribution layers and a plurality of second redistribution layers, and the first redistribution layers are disposed between the first dielectric layer and the second dielectric layer.

5. The scalable millimeter-wave phased-array unit according to claim 4, further provided with a TGV via penetrating the first glass substrate, the second glass substrate and the dielectric layer, and both ends of the TGV via are connected to one of the antenna units and one of the second redistribution layers, respectively.

6. The scalable millimeter wave phased array unit according to claim 5, wherein a first via hole is formed through the first dielectric layer, a second via hole is formed through the second dielectric layer, two ends of the first via hole are respectively connected to the semiconductor device layer and the first redistribution layer, and two ends of the second via hole are respectively connected to the first redistribution layer and the second redistribution layer.

7. The scalable millimeter-wave phased-array unit of claim 6, wherein a placement cavity is provided within the second layer of glass substrate, the semiconductor device layer being disposed within the placement cavity, the placement cavity having a depth greater than 100 um.

8. The scalable millimeter wave phased array unit according to claim 7, wherein the dielectric layer is made of silicon dioxide, polyimide, benzocyclobutene, and has a single layer thickness of 5-10 um.

9. An active antenna array comprising a plurality of the scalable millimeter wave phased array units of any of claims 1 to 8, each of the scalable millimeter wave phased array units being surface mounted to a PCB board by the BGA array.