CN216228745U - Wafer grinding device - Google Patents
Wafer grinding device Download PDFInfo
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- CN216228745U CN216228745U CN202122934294.3U CN202122934294U CN216228745U CN 216228745 U CN216228745 U CN 216228745U CN 202122934294 U CN202122934294 U CN 202122934294U CN 216228745 U CN216228745 U CN 216228745U
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- grinding
- polishing
- wafer
- layer
- polishing apparatus
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- 238000005498 polishing Methods 0.000 claims abstract description 132
- 239000010410 layer Substances 0.000 claims abstract description 56
- 239000012790 adhesive layer Substances 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims description 31
- 238000001514 detection method Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model provides a wafer grinding device, comprising: a machine platform; and the grinding turntable is arranged on the machine table. The paster sets up on grinding the carousel, and the paster includes: the bonding layer is arranged on the upper surface of the grinding turntable; a carrier layer disposed on the adhesive layer; and a cover layer disposed on the carrier layer, wherein the carrier layer connects the adhesive layer with the cover layer. And the grinding pad is arranged on the patch, and the lower surface of the grinding pad is in contact with the upper surface of the covering layer. And a polishing head located above the polishing pad. The wafer grinding device provided by the utility model improves the wafer grinding efficiency.
Description
Technical Field
The utility model relates to the technical field of grinding, in particular to a wafer grinding device.
Background
In wafer fabrication, as the process technology is upgraded and the sizes of the conductive lines and the gates are reduced, the requirement of the photolithography technology on the flatness of the wafer surface is higher and higher. In semiconductor manufacturing processes, Chemical Mechanical Polishing (CMP) is a preferred process for planarization of wafer surfaces, and particularly after semiconductor manufacturing processes enter the submicron field, CMP has become an indispensable process technology.
However, in the conventional wafer polishing apparatus, the connection between the polishing pad and the turntable is unstable and is not easily detached. Therefore, how to improve the connection stability between the polishing pad and the turntable has become an urgent problem to be solved.
SUMMERY OF THE UTILITY MODEL
In view of the defects of the prior art, the application provides a wafer polishing device, which can enhance the connection stability of a polishing pad and a turntable, reduce the polishing time and improve the polishing efficiency of a wafer.
To achieve the above and other objects, the present application provides a wafer polishing apparatus comprising:
a machine platform;
the grinding turntable is arranged on the machine table;
the paster sets up grind on the carousel, just the paster includes:
the bonding layer is arranged on the upper surface of the grinding turntable;
a carrier layer disposed on the adhesive layer; and
a cover layer disposed on the carrier layer, wherein the carrier layer connects the adhesive layer and the cover layer;
the grinding pad is arranged on the patch, and the lower surface of the grinding pad is in contact with the upper surface of the covering layer; and
and the grinding head is positioned above the grinding pad.
Optionally, the thickness of the patch is greater than the thickness of the polishing pad.
Optionally, the cover layer is circular in cross-section.
Optionally, the polishing pad and the cover layer have the same diameter.
Optionally, the adhesive layer, the carrier layer and the cover layer are of the same cross-sectional size and shape.
Optionally, the central axis of the grinding bit is perpendicular to the upper surface of the grinding carousel.
Optionally, the wafer grinding device further comprises a liquid supply device, wherein the liquid supply device comprises a liquid storage tank and a conduit, and the conduit is connected with one side of the liquid storage tank.
Optionally, a projection of the liquid outlet of the conduit on the machine table plane is located in a projection area of the grinding turntable on the machine table plane.
Optionally, the wafer polishing apparatus further includes a detection device, and the detection device is located on one side of the polishing turntable.
Optionally, the level of the detection device is between the level of the polishing head and the level of the polishing pad.
In summary, the present application provides a wafer polishing apparatus, which can enhance the connection stability between the polishing pad and the turntable, reduce the polishing time, and improve the polishing efficiency of the wafer. Meanwhile, residual particles on the grinding pad can be effectively removed, the surface cleanliness of the grinding pad is improved, the phenomenon that the residual particles pollute the wafer is avoided, and the product yield is improved.
Drawings
Fig. 1 is a schematic structural diagram of a wafer polishing apparatus according to an embodiment of the present disclosure.
Description of reference numerals:
10, a machine table;
20 grinding the turntable;
30 sticking a patch;
301 an adhesive layer;
302 a carrier layer;
303 a cover layer;
40 a polishing pad;
50 grinding head;
60 a liquid supply device;
601 a liquid storage tank;
602 a catheter;
70 detecting the device.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The application provides a wafer grinding device, which can improve the grinding efficiency of wafers. In wafer polishing, chemical mechanical polishing techniques are typically used. The chemical mechanical polishing technology combines the advantages of chemical polishing and mechanical polishing. The chemical grinding surface has high precision, low damage and good integrity, and is not easy to generate surface or sub-surface damage. However, the grinding rate is slow, the material removal efficiency is low, the surface profile accuracy cannot be corrected, and the grinding consistency is poor. The mechanical grinding consistency is good, the surface flatness is high, the grinding efficiency is high, but the surface layer or the sub-surface layer is easy to damage, and the surface roughness value is lower. The chemical mechanical polishing can ensure the material removal efficiency and obtain a perfect surface. The application provides a wafer grinding device, can strengthen the connection stability of grinding pad and carousel in the wafer grinding process, reduce the grinding time, improve the grinding efficiency of wafer.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a wafer polishing apparatus according to an embodiment of the present disclosure. In the present application, a wafer polishing apparatus is provided, which in the present embodiment includes a machine 10, a polishing turntable 20, a pad 30, a polishing pad 40 and a polishing head 50. In an embodiment of the present application, the polishing turntable 20 may be disposed on the machine 10. The grinding rotor 20 may be rotated either clockwise or counterclockwise. The patch 30 may be disposed on the abrasive turntable 20 and the abrasive pad 40 may be disposed on the patch 30. In an embodiment of the present application, the diameter of the polishing pad 40 and the diameter of the patch 30 may be equal, and the thickness of the patch 30 may be greater than the thickness of the polishing pad 40. In one embodiment of the present application, patch 30 may include an adhesive layer 301, a carrier layer 302, and a cover layer 303. The lower surface of the polishing pad 40 may be in contact with the upper surface of the covering layer 303. The cross-sectional shape of the cladding 303 may be circular. In this embodiment, the polishing pad 40 may be connected to the polishing turntable 20 by a patch 30. In this embodiment, the wafer polishing apparatus may further include a polishing head 50, wherein the polishing head 50 is located above the polishing pad 40.
Referring to fig. 1, in one embodiment of the present application, patch 30 may include an adhesive layer 301, a carrier layer 302, and a cover layer 303. In this embodiment, the adhesive layer 301 may be provided on the upper surface of the polishing turntable 20. The carrier layer 302 may be disposed on the adhesive layer 301, and the cover layer 303 may be disposed on the carrier layer 302. The cross-sectional size and shape of the adhesive layer 301, the carrier layer 302, and the cover layer 303 may be the same, and in this embodiment, the cross-sectional shape of the adhesive layer 301, the carrier layer 302, and the cover layer 303 may be circular. In this embodiment, the adhesive layer 301 and the cover layer 303 may be connected by a carrier layer 302. In one embodiment of the present application, the material of the covering layer 303 may be, for example, polytetrafluoroethylene. The polytetrafluoroethylene is acid-resistant, alkali-resistant and high-temperature-resistant, has a low friction coefficient, and can be conveniently moved or replaced after the wafer is ground. In addition, polytetrafluoroethylene has almost no tackiness. The teflon is directly arranged on the upper surface of the grinding turntable 20 as a covering layer, or a layer of colloid is directly coated on the lower surface of the teflon covering layer to be bonded with the grinding turntable 20, so that the connection effect is not ideal. In the present application, patch 30 may include an adhesive layer 301, a carrier layer 302, and a cover layer 303. The lower surface of the polishing pad 40 may be in contact with the upper surface of the covering layer 303, which may facilitate removal or replacement of the polishing pad 40 after polishing is completed. The carrier layer 302 may be, for example, a polymer carrier, and the carrier layer 302 is disposed on the upper surface of the adhesive layer 301. The polishing pad 40 may be bonded to the polishing turntable 20 by the patch 30.
Referring to fig. 1, in an embodiment of the present application, the wafer polishing apparatus may further include a liquid supply device 60 and a detection device 70. In this embodiment, the liquid supply device 60 may include a tank 601 and a conduit 602. The conduit 602 is connected to the tank 601, and the conduit 602 may be located above the grinding turntable 20. During the wafer polishing process, the conduit 602 guides the slurry in the tank 601 to the working area of the machine 10. In an embodiment of the present application, a projection of the outlet of the conduit 602 on the plane of the machine 10 may be located in a projection area of the polishing turntable 20 on the plane of the machine 10. In some embodiments of the present application, the polishing liquid may include an oxidizing agent and abrasive grains, and may further include an oxidized metal dissolving agent and a protective film forming agent as needed. In some embodiments of the present application, the surface to be polished may be one or more materials such as silicon dioxide, silicon nitride, and polysilicon. In some embodiments of the present application, the abrasive particles may be, for example, silica, alumina, ceria, titania, zirconia, germania, or modifications thereof, among others. In one embodiment of the present application, the abrasive particles may include silicon dioxide in order to inhibit polishing damage on the wafer. In some embodiments of the present application, the abrasive particles may have an average particle size in a range of, for example, 10 to 100 nm.
Referring to fig. 1, in an embodiment of the present disclosure, the liquid supply device 60 may be disposed at one side of the machine 10, and the detection device 70 may be disposed at the same side or the other side of the liquid supply device 60. In the present embodiment, the detection device 70 is disposed on the same side as the liquid supply device 60. In this embodiment, the position of the detection device 70 in the horizontal direction may be located between the polishing pad 40 and the polishing head 50. Further, the level of the detection device 70 may be located between the level of the polishing head 50 and the polishing pad 40. In an embodiment of the present application, the liquid supply device 60 may further provide a cleaning liquid, which may be, for example, plasma water. Polishing begins when a wafer to be polished is loaded onto the polishing pad 40. The detecting device 70 detects the position relationship between the polishing head 50 and the polishing pad 40, and when the distance between the polishing head 50 and the polishing pad 40 is smaller than a predetermined value, the polishing liquid enters the liquid storage tank 601 and is guided to the polishing pad 40 through the conduit 602. After the polishing process, the detecting device 70 detects the position relationship between the polishing pad 40 and the polishing head 50, the distance between the polishing pad 40 and the polishing head 50 is greater than a predetermined value, and the cleaning solution enters the liquid storage tank 601 and is guided to the polishing pad 40 through the conduit 602 to clean the residual impurities.
Referring to fig. 1, in one embodiment of the present application, during chemical mechanical polishing, a polishing head 50 picks up a wafer to be polished and presses the wafer to be polished against a polishing pad 40. The central axis of the grinding bit 50 is perpendicular to the upper surface of the grinding carousel 20. During the polishing process, the polishing head 50 can move up and down along the rotation axis of the polishing turntable 20, and can also move horizontally along the diameter direction of the polishing turntable 20 to the edge of the polishing turntable 20. In one embodiment of the present application, the polishing head 50 can also rotate along its central axis during the polishing process.
Referring to fig. 1, in one embodiment of the present application, the polishing turntable 20 may rotate in a clockwise direction or a counterclockwise direction in a top view. The rotation speed of the polishing turntable 20 can be, for example, 15 to 45r/min, and in the present embodiment, the rotation speed of the polishing turntable 20 can be, for example, 25 r/min. During polishing of the wafer, the polishing head 50 is pressed down to the polishing pad 40. In one embodiment of the present application, the abrading head 50 and the abrasive disk 20 may rotate in the same direction. In some embodiments of the present disclosure, the pressure applied by the polishing head 50 on the polishing pad 40 may be, for example, 0.03-0.06 Mpa. The rotation speed of the polishing head 50 can be, for example, 40 to 60 r/min. The rotation speed of the polishing turntable 20 can be, for example, 15 to 45 r/min. When the grinding bit 50 and the grinding turntable 20 rotate in the same direction, the rotation speed of the grinding bit 50 and the rotation speed of the grinding turntable 20 are different. In other embodiments of the present application, the polishing head 50 and the polishing turntable 20 can also rotate in opposite directions, and the opposite rotation directions allow a greater relative rotation speed between the wafer to be polished and the polishing pad 40, thereby allowing the wafer to have better polishing effect. When the rotation directions of the polishing table and the carrying arm are opposite, the rotation speeds of the polishing head 50 and the polishing turntable 20 may be the same or different.
In one embodiment of the present application, the cross-section of the polishing head 50 can be circular, and in other embodiments of the present application, the cross-section of the polishing head 50 can be triangular, rectangular, or other figures. In this embodiment, the radial dimension of the polishing head 50 may be larger than the dimension of the wafer to be polished.
Referring to fig. 1, in an embodiment of the present application, the detecting device 70 detects a positional relationship between the polishing pad 40 and the polishing head 50, and when a distance between the polishing pad 40 and the polishing head 50 is smaller than a predetermined value, the polishing liquid enters the liquid storage tank 601 and is guided to the polishing pad 40 through the conduit 602. The polishing liquid may contain an oxidizing agent and abrasive grains, and may further contain an oxidized metal dissolving agent and a protective film forming agent as needed. The abrasive grains may be, for example, silica, alumina, ceria, titania, zirconia, germania, or a modified product of the above materials, or the like. In one embodiment of the present application, the abrasive particles may include silicon dioxide in order to inhibit polishing damage on the wafer. Chemical reaction can be generated on the surface of the wafer by using the chemical auxiliary agent in the grinding liquid to generate a grinding layer. The polishing pad 40 and the abrasive particles in the polishing liquid are combined to assist mechanical polishing, so as to polish the protruding parts on the easy-to-polish layer. By repeating the above chemical mechanical polishing process, the profile of the wafer surface can be planarized by the chemical auxiliary agent and the abrasive grains. When the polishing head 50 is lifted up after the polishing is finished, the detecting device 70 detects the position relationship between the polishing pad 40 and the polishing head 50, the distance between the polishing pad 40 and the polishing head 50 is greater than a predetermined value, and the cleaning solution enters the liquid storage tank 601 and is guided to the polishing pad 40 through the conduit 602 to clean the residual impurities. In some embodiments of the present application, the pressure range of the cleaning liquid may be, for example, 0.5 to 1.5 Mpa. In the present embodiment, the use pressure of the cleaning liquid may be, for example, 1 Mpa. The cleaning solution may be used to clean the polishing pad 40 or the wafer. In summary, the present application provides a wafer polishing apparatus, which can enhance the connection stability between the polishing pad and the turntable, reduce the polishing time, and improve the polishing efficiency of the wafer. Meanwhile, residual particles on the grinding pad can be effectively removed, the surface cleanliness of the grinding pad is improved, the phenomenon that the residual particles pollute the wafer is avoided, and the product yield is improved.
The above description of illustrated embodiments of the utility model, including what is described in the abstract of the specification, is not intended to be exhaustive or to limit the utility model to the precise forms disclosed herein. While specific embodiments of, and examples for, the utility model are described herein for illustrative purposes only, various equivalent modifications are possible within the spirit and scope of the present invention, as those skilled in the relevant art will recognize and appreciate. As indicated, these modifications may be made to the present invention in light of the foregoing description of illustrated embodiments of the present invention and are to be included within the spirit and scope of the present invention.
The systems and methods have been described herein in general terms as the details aid in understanding the utility model. Furthermore, various specific details have been given to provide a general understanding of the embodiments of the utility model. One skilled in the relevant art will recognize, however, that an embodiment of the utility model can be practiced without one or more of the specific details, or with other apparatus, systems, assemblies, methods, components, materials, parts, and/or the like. In other instances, well-known structures, materials, and/or operations are not specifically shown or described in detail to avoid obscuring aspects of embodiments of the utility model.
Thus, although the present invention has been described herein with reference to particular embodiments thereof, a latitude of modification, various changes and substitutions are intended in the foregoing disclosures, and it will be appreciated that in some instances some features of the utility model will be employed without a corresponding use of other features without departing from the scope and spirit of the utility model as set forth. Thus, many modifications may be made to adapt a particular situation or material to the essential scope and spirit of the present invention. It is intended that the utility model not be limited to the particular terms used in following claims and/or to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the utility model will include any and all embodiments and equivalents falling within the scope of the appended claims. Accordingly, the scope of the utility model is to be determined solely by the appended claims.
The above description is only a preferred embodiment of the present application and the explanation of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above technical features (but not limited to) having similar functions disclosed in the present application. Other technical features than those described in the specification are known to those skilled in the art, and are not described herein in detail in order to highlight the innovative features of the present invention.
Claims (10)
1. A wafer polishing apparatus, comprising:
a machine platform;
the grinding turntable is arranged on the machine table;
the paster sets up grind on the carousel, just the paster includes:
the bonding layer is arranged on the upper surface of the grinding turntable;
a carrier layer disposed on the adhesive layer; and
a cover layer disposed on the carrier layer, wherein the carrier layer connects the adhesive layer and the cover layer;
the grinding pad is arranged on the patch, and the lower surface of the grinding pad is in contact with the upper surface of the covering layer; and
and the grinding head is positioned above the grinding pad.
2. The wafer polishing apparatus as set forth in claim 1, wherein: the thickness of the patch is greater than the thickness of the grinding pad.
3. The wafer polishing apparatus as set forth in claim 1, wherein: the cross section of the covering layer is circular.
4. The wafer polishing apparatus as set forth in claim 1, wherein: the diameter of the polishing pad is equal to that of the covering layer.
5. The wafer polishing apparatus as set forth in claim 1, wherein: the adhesive layer, the carrier layer and the cover layer have the same cross-sectional size and shape.
6. The wafer polishing apparatus as set forth in claim 1, wherein: the central axis of the grinding head is vertical to the upper surface of the grinding turntable.
7. The wafer polishing apparatus as set forth in claim 1, wherein: the wafer grinding device further comprises a liquid supply device, the liquid supply device comprises a liquid storage box and a guide pipe, and the guide pipe is connected with one side of the liquid storage box.
8. The wafer polishing apparatus as set forth in claim 7, wherein: the projection of the liquid outlet of the guide pipe on the machine platform plane is positioned in the projection area of the grinding turntable on the machine platform plane.
9. The wafer polishing apparatus as set forth in claim 1, wherein: the wafer grinding device further comprises a detection device, and the detection device is located on one side of the grinding turntable.
10. The wafer polishing apparatus as set forth in claim 9, wherein: the horizontal plane of the detection device is located between the horizontal planes of the grinding head and the grinding pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122934294.3U CN216228745U (en) | 2021-11-26 | 2021-11-26 | Wafer grinding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122934294.3U CN216228745U (en) | 2021-11-26 | 2021-11-26 | Wafer grinding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216228745U true CN216228745U (en) | 2022-04-08 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122934294.3U Active CN216228745U (en) | 2021-11-26 | 2021-11-26 | Wafer grinding device |
Country Status (1)
| Country | Link |
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| CN (1) | CN216228745U (en) |
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2021
- 2021-11-26 CN CN202122934294.3U patent/CN216228745U/en active Active
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