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CN216214122U - Decoupling Structure for Suppressing Mutual Coupling Between Stacked Microstrip Patch Antennas - Google Patents

Decoupling Structure for Suppressing Mutual Coupling Between Stacked Microstrip Patch Antennas Download PDF

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CN216214122U
CN216214122U CN202122668255.3U CN202122668255U CN216214122U CN 216214122 U CN216214122 U CN 216214122U CN 202122668255 U CN202122668255 U CN 202122668255U CN 216214122 U CN216214122 U CN 216214122U
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patch
microstrip
mutual coupling
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decoupling
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方玉林
张跃平
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Shanghai Jiao Tong University
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Abstract

一种抑制叠层微带贴片天线间相互耦合的解耦结构,包括:分别设置于第一介质板和第二介质板上固定驱动贴片和寄生贴片,其中:驱动贴片的外围设有作为解耦结构的C型微带结构,驱动贴片和C型微带结构上分别设有天线接口和金属化过孔。本装置利用解耦结构的特性控制天线阵单元之间的耦合强度,实现了两单元H面排布的叠层微带天线间相互耦合的抑制以叠层微带天线阵解耦设计。

Figure 202122668255

A decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas, comprising: a fixed driving patch and a parasitic patch respectively arranged on a first dielectric board and a second dielectric board, wherein: a peripheral device of the driving patch There is a C-type microstrip structure as a decoupling structure, and the driving patch and the C-type microstrip structure are respectively provided with an antenna interface and a metallized via hole. The device utilizes the characteristics of the decoupling structure to control the coupling strength between the antenna array elements, and realizes the suppression of the mutual coupling between the stacked microstrip antennas arranged on the H-plane of the two elements and the decoupling design of the stacked microstrip antenna array.

Figure 202122668255

Description

抑制叠层微带贴片天线间相互耦合的解耦结构Decoupling Structure for Suppressing Mutual Coupling Between Stacked Microstrip Patch Antennas

技术领域technical field

本实用新型涉及的是一种贴片天线领域的技术,具体是一种抑制叠层微带贴片天线间相互耦合的解耦结构。The utility model relates to a technology in the field of patch antennas, in particular to a decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas.

背景技术Background technique

多输入多输出MIMO技术在不增加频谱资源开销的情况下,可大大提高信道容量和进行高数据速率传输,已广泛应用于现代无线通信系统中。叠层微带贴片天线具有宽阻抗带宽、宽波束宽度、极化灵活性和滤波器特性,并且叠层微带贴片天线易于实现ESD保护、满足金属密度要求和散热。因此,叠层微带贴片天线在5G基站、客户端设备和智能手机的天线阵列设计中占主导地位。然而,由于实际系统空间的限制,天线单元之间的相互耦合会降低MIMO系统的性能。而且现有的缓解多天线系统的天线单元之间的相互耦合的方法大都是基于单层微带天线进行研究,其难以直接应用于叠层微带天线阵列中。此外,这些方法也各有其缺陷,如去耦网络方法不适用单元间隔较远的天线阵列解耦;电磁结构,结构十分复杂,缺陷地结构易产生大的背向辐射等。另外,叠层微带贴片解耦方法研究不足,现有的方法则采用了牺牲叠层微带贴片天线带宽的形式来获取相互耦合的降低,其利用高介电常数,将下层谐振频率移至与上层谐振频率一致的情况,实现了叠层微带贴片天线的解耦,但该方法实际上牺牲了叠层微带贴片天线最大的优势。Multiple-input multiple-output MIMO technology can greatly improve channel capacity and perform high data rate transmission without increasing the overhead of spectrum resources, and has been widely used in modern wireless communication systems. The stacked microstrip patch antenna has a wide impedance bandwidth, wide beam width, polarization flexibility and filter characteristics, and the stacked microstrip patch antenna is easy to achieve ESD protection, meet metal density requirements and heat dissipation. As a result, stacked microstrip patch antennas dominate the antenna array designs for 5G base stations, customer premises equipment and smartphones. However, the mutual coupling between the antenna elements can degrade the performance of the MIMO system due to the limitation of the actual system space. Moreover, most of the existing methods for alleviating the mutual coupling between the antenna elements of the multi-antenna system are based on single-layer microstrip antennas, which are difficult to be directly applied to the stacked microstrip antenna array. In addition, these methods also have their own shortcomings. For example, the decoupling network method is not suitable for the decoupling of antenna arrays with far unit intervals; the electromagnetic structure is very complex, and the defective structure is prone to large back radiation. In addition, the decoupling method of the stacked microstrip patch is insufficiently studied. The existing method adopts the form of sacrificing the bandwidth of the stacked microstrip patch antenna to obtain the reduction of mutual coupling. Moving to the case where the resonant frequency of the upper layer is consistent, the decoupling of the stacked microstrip patch antenna is realized, but this method actually sacrifices the greatest advantage of the stacked microstrip patch antenna.

实用新型内容Utility model content

本实用新型针对现有技术存在的上述不足,提出一种抑制叠层微带贴片天线间相互耦合的解耦结构,利用解耦结构的特性控制天线阵单元之间的耦合强度,实现了两单元H面排布的叠层微带天线间相互耦合的抑制以叠层微带天线阵解耦设计。Aiming at the above-mentioned shortcomings of the prior art, the utility model proposes a decoupling structure for suppressing the mutual coupling between the stacked microstrip patch antennas. The characteristics of the decoupling structure are used to control the coupling strength between the antenna array units, thereby realizing two The suppression of the mutual coupling between the stacked microstrip antennas arranged on the H surface of the unit is designed by decoupling the stacked microstrip antenna array.

本实用新型是通过以下技术方案实现的:The utility model is achieved through the following technical solutions:

本实用新型涉及一种抑制叠层微带贴片天线间相互耦合的解耦结构,包括:分别设置于第一介质板和第二介质板上固定驱动贴片和寄生贴片,其中:驱动贴片的外围设有作为解耦结构的C型微带结构,驱动贴片和C型微带结构上分别设有天线接口和金属化过孔。The utility model relates to a decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas, comprising: a fixed driving patch and a parasitic patch respectively arranged on a first medium plate and a second medium plate, wherein: The periphery of the chip is provided with a C-type microstrip structure as a decoupling structure, and the driving patch and the C-type microstrip structure are respectively provided with an antenna interface and a metallized via hole.

所述的C型微带结构沿驱动贴片的非辐射边周围放置,金属化过孔位于C型微带结构的两个枝节的顶端和中心位置以调节叠层微带贴片天线阵列在低频处的耦合。The C-type microstrip structure is placed around the non-radiating edge of the driver patch, and the metallized vias are located at the top and center of the two branches of the C-type microstrip structure to adjust the stacked microstrip patch antenna array at low frequencies. coupling at.

所述的寄生贴片的外围设有方形环结构作为辅助解耦结构,该正方形环型结构位于寄生贴片的周围以调控叠层微带贴片天线阵列在高频处的耦合。A square ring structure is arranged on the periphery of the parasitic patch as an auxiliary decoupling structure, and the square ring structure is located around the parasitic patch to regulate the coupling of the stacked microstrip patch antenna array at high frequencies.

所述的第一介质板上设有金属地层;第二介质板没有金属地层。The first dielectric plate is provided with a metal stratum; the second dielectric plate has no metal stratum.

附图说明Description of drawings

图1为驱动贴片和寄生贴片同时加载解耦结构的物理示意图;Fig. 1 is the physical schematic diagram of the decoupling structure loaded simultaneously by the driver patch and the parasitic patch;

图2为驱动贴片加载解耦结构的物理示意图;Fig. 2 is the physical schematic diagram of driving patch loading decoupling structure;

图3为仅驱动贴片加载解耦结构时的S参数示意图;FIG. 3 is a schematic diagram of the S-parameters when only the driver patch is loaded with the decoupling structure;

图4为驱动贴片和寄生贴片同时加载解耦结构时的S参数示意图;FIG. 4 is a schematic diagram of S-parameters when the driver patch and the parasitic patch are loaded with the decoupling structure at the same time;

图中:第一介质板1、第二介质板2、驱动贴片3、寄生贴片4、C型微带结构5、金属化过孔6、方形环结构7、金属地层8、天线接口9。In the figure: the first dielectric board 1, the second dielectric board 2, the driver patch 3, the parasitic patch 4, the C-type microstrip structure 5, the metallized via 6, the square ring structure 7, the metal ground layer 8, the antenna interface 9 .

具体实施方式Detailed ways

如图1和图2所示,为本实施例涉及一种抑制叠层微带贴片天线间相互耦合的解耦结构,包括:分别设置于第一介质板1和第二介质板2上固定驱动贴片3和寄生贴片4,其中:驱动贴片3的外围设有作为解耦结构的C型微带结构5,驱动贴片3和C型微带结构5上分别设有天线接口9和金属化过孔6。As shown in FIG. 1 and FIG. 2 , the present embodiment relates to a decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas, including: respectively setting on a first dielectric board 1 and a second dielectric board 2 and fixing The driving patch 3 and the parasitic patch 4, wherein: the periphery of the driving patch 3 is provided with a C-type microstrip structure 5 as a decoupling structure, and the driving patch 3 and the C-type microstrip structure 5 are respectively provided with an antenna interface 9 and metallized vias 6.

所述的C型微带结构5沿驱动贴片3的非辐射边周围放置,金属化过孔6位于C型微带结构5的两个枝节的顶端和中心位置以调节叠层微带贴片天线阵列在低频处的耦合。The C-type microstrip structure 5 is placed around the non-radiating edge of the drive patch 3, and the metallized vias 6 are located at the top and center of the two branches of the C-type microstrip structure 5 to adjust the stacked microstrip patch. Coupling of antenna arrays at low frequencies.

所述的寄生贴片4的外围设有方形环结构7作为辅助解耦结构,该正方形环型结构7位于寄生贴片4的周围以调控叠层微带贴片天线阵列在高频处的耦合。The periphery of the parasitic patch 4 is provided with a square ring structure 7 as an auxiliary decoupling structure, and the square ring structure 7 is located around the parasitic patch 4 to regulate the coupling of the stacked microstrip patch antenna array at high frequencies .

所述的第一介质板1和第二介质板2均为介电常数为4.4,损耗角正切为0.02的FR4长方形介质,尺寸为140mm*80mm*3mm,其中第一介质板1上设有金属地层8;第二介质板2没有金属地层。The first dielectric board 1 and the second dielectric board 2 are both FR4 rectangular dielectrics with a dielectric constant of 4.4 and a loss tangent of 0.02, with a size of 140mm*80mm*3mm, wherein the first dielectric board 1 is provided with metal Formation 8; the second dielectric plate 2 has no metal formation.

所述的驱动贴片3为17.6mm*17.6mm的正方形微带贴片,所述的寄生贴片4为17.65mm*17.65mm的正方形微带贴片位于第二介质板2的一侧。The driving patch 3 is a 17.6mm*17.6mm square microstrip patch, and the parasitic patch 4 is a 17.65mm*17.65mm square microstrip patch located on one side of the second dielectric plate 2 .

叠层微带贴片天线单元沿着H面排列,天线单元之间的间距是0.5λ0The stacked microstrip patch antenna elements are arranged along the H plane, and the spacing between the antenna elements is 0.5λ 0 .

如图2所示,当仅对驱动贴片进行加载,则能起到调节叠层微带天线阵列在低频处的耦合,如图3展示的在C型微带结构的线宽为2.2mm,两个枝节的长度分别为16.8mm和15.7mm,解耦结构与驱动单元的间距为0.3mm,金属化过孔的半径为0.8mm时天线阵列的解耦效果。继续对寄生贴片进行加载,通过调节解耦结构的参数,可同时实现叠层微带贴片天线阵列在高低频处的解耦。如图4所示,为在驱动贴片和寄生贴片同时加载时的解耦效果。As shown in Figure 2, when only the driver patch is loaded, the coupling of the stacked microstrip antenna array at low frequencies can be adjusted. As shown in Figure 3, the line width of the C-type microstrip structure is 2.2mm. The lengths of the two branches are 16.8mm and 15.7mm respectively, the distance between the decoupling structure and the driving unit is 0.3mm, and the decoupling effect of the antenna array when the radius of the metallized via is 0.8mm. Continue to load the parasitic patch, and by adjusting the parameters of the decoupling structure, the decoupling of the stacked microstrip patch antenna array at high and low frequencies can be achieved at the same time. As shown in Figure 4, it is the decoupling effect when the driver patch and the parasitic patch are loaded at the same time.

上述具体实施可由本领域技术人员在不背离本实用新型原理和宗旨的前提下以不同的方式对其进行局部调整,本实用新型的保护范围以权利要求书为准且不由上述具体实施所限,在其范围内的各个实现方案均受本实用新型之约束。The above-mentioned specific implementation can be partially adjusted by those skilled in the art in different ways without departing from the principle and purpose of the present utility model. The protection scope of the present utility model is based on the claims and is not limited by the above-mentioned specific implementation. Each implementation scheme within its scope is bound by the present invention.

Claims (7)

1.一种抑制叠层微带贴片天线间相互耦合的解耦结构,其特征在于,包括:分别设置于第一介质板和第二介质板上固定驱动贴片和寄生贴片,其中:驱动贴片的外围设有作为解耦结构的C型微带结构,驱动贴片和C型微带结构上分别设有天线接口和金属化过孔。1. A decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas, characterized in that it comprises: a fixed driving patch and a parasitic patch are respectively arranged on the first dielectric plate and the second dielectric plate, wherein: A C-type microstrip structure as a decoupling structure is arranged on the periphery of the driving patch, and an antenna interface and a metallized via hole are respectively arranged on the driving patch and the C-type microstrip structure. 2.根据权利要求1所述的抑制叠层微带贴片天线间相互耦合的解耦结构,其特征是,所述的C型微带结构沿驱动贴片的非辐射边周围放置,金属化过孔位于C型微带结构的两个枝节的顶端和中心位置以调节叠层微带贴片天线阵列在低频处的耦合。2. The decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas according to claim 1, wherein the C-type microstrip structure is placed along the non-radiating side of the driving patch, and the metallized Vias are located at the top and center positions of the two branches of the C-type microstrip structure to adjust the coupling of the stacked microstrip patch antenna array at low frequencies. 3.根据权利要求1所述的抑制叠层微带贴片天线间相互耦合的解耦结构,其特征是,所述的寄生贴片的外围设有方形环结构作为辅助解耦结构,该方形环型结构位于寄生贴片的周围以调控叠层微带贴片天线阵列在高频处的耦合。3. The decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas according to claim 1, wherein a square ring structure is provided on the periphery of the parasitic patch as an auxiliary decoupling structure. A loop structure is placed around the parasitic patch to tune the coupling of the stacked microstrip patch antenna array at high frequencies. 4.根据权利要求1或2或3所述的抑制叠层微带贴片天线间相互耦合的解耦结构,其特征是,所述的第一介质板上设有金属地层;第二介质板没有金属地层。4. The decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas according to claim 1, 2 or 3, wherein the first dielectric plate is provided with a metal ground layer; the second dielectric plate There are no metal formations. 5.根据权利要求1或2所述的抑制叠层微带贴片天线间相互耦合的解耦结构,其特征是,所述的第一介质板和第二介质板均为介电常数为4.4,损耗角正切为0.02的FR4长方形介质,尺寸为140mm*80mm*3mm,其中第一介质板上设有金属地层;第二介质板没有金属地层。5. The decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas according to claim 1 or 2, wherein the first dielectric plate and the second dielectric plate are both with a dielectric constant of 4.4 , a FR4 rectangular dielectric with a loss tangent of 0.02 and a size of 140mm*80mm*3mm, wherein the first dielectric plate is provided with a metal stratum; the second dielectric board has no metal stratum. 6.根据权利要求1或2所述的抑制叠层微带贴片天线间相互耦合的解耦结构,其特征是,所述的驱动贴片为17.6mm*17.6mm的正方形微带贴片,所述的寄生贴片为17.65mm*17.65mm的正方形微带贴片位于第二介质板的一侧。6. The decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas according to claim 1 or 2, wherein the driving patch is a 17.6mm*17.6mm square microstrip patch, The parasitic patch is a 17.65mm*17.65mm square microstrip patch located on one side of the second dielectric plate. 7.根据权利要求1或2所述的抑制叠层微带贴片天线间相互耦合的解耦结构,其特征是,所述的C型微带结构的线宽为2.2mm,两个枝节的长度分别为16.8mm和15.7mm,解耦结构与驱动单元的间距为0.3mm,金属化过孔的半径为0.8mm。7. The decoupling structure for suppressing mutual coupling between stacked microstrip patch antennas according to claim 1 or 2, wherein the line width of the C-type microstrip structure is 2.2 mm, and the line width of the two branches is 2.2 mm. The lengths are 16.8mm and 15.7mm respectively, the distance between the decoupling structure and the drive unit is 0.3mm, and the radius of the metallized via is 0.8mm.
CN202122668255.3U 2021-11-03 2021-11-03 Decoupling Structure for Suppressing Mutual Coupling Between Stacked Microstrip Patch Antennas Expired - Fee Related CN216214122U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117855834A (en) * 2023-12-28 2024-04-09 南通大学 Circular polarization decoupling patch antenna based on diagonal parasitic strip structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117855834A (en) * 2023-12-28 2024-04-09 南通大学 Circular polarization decoupling patch antenna based on diagonal parasitic strip structure

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