CN216161684U - Base cover and substrate processing device - Google Patents
Base cover and substrate processing device Download PDFInfo
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- CN216161684U CN216161684U CN202122279587.2U CN202122279587U CN216161684U CN 216161684 U CN216161684 U CN 216161684U CN 202122279587 U CN202122279587 U CN 202122279587U CN 216161684 U CN216161684 U CN 216161684U
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- 239000000758 substrate Substances 0.000 title claims abstract description 139
- 238000012545 processing Methods 0.000 title claims abstract description 61
- 239000007789 gas Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 30
- 230000005855 radiation Effects 0.000 description 27
- 230000008569 process Effects 0.000 description 26
- 230000005672 electromagnetic field Effects 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 238000009826 distribution Methods 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 230000007423 decrease Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Abstract
本实用新型提供一种基座盖及具备该基座盖的基板处理装置。该基座盖，其特征在于，载置于设于基板处理室内的基座的上表面，上述基座盖具备：在上述基座盖的上方使基板升降的基板上顶销插通内侧的第一贯通孔；以及与上述第一贯通孔不同的第二贯通孔。
The utility model provides a base cover and a substrate processing device equipped with the base cover. The susceptor cover is placed on an upper surface of a susceptor provided in a substrate processing chamber, and the susceptor cover includes: a substrate upper ejector pin inserted into the inner side above the susceptor cover for raising and lowering the substrate a through hole; and a second through hole different from the first through hole.
Description
Technical Field
The utility model relates to a susceptor cover and a substrate processing apparatus.
Background
In forming a circuit pattern of a semiconductor device such as a flash memory, a step of performing a predetermined process such as an oxidation process or a nitridation process on a substrate may be performed as one step of a manufacturing process. For example, patent document 1 discloses modifying a surface of a pattern formed on a substrate with a process gas excited by plasma.
As shown in patent document 1, a susceptor on which a substrate is placed is disposed in a processing chamber of a substrate processing apparatus. The susceptor is provided with a heater for heating the substrate placed thereon. The susceptor is provided with a through hole and an upper lift pin inserted therethrough, and after the substrate processing is completed, the mounted substrate is lifted up by the upper lift pin inserted through the through hole and separated from the susceptor.
As disclosed in patent document 2, a susceptor cover may be covered on the upper surface of the susceptor, and a substrate may be placed on the susceptor cover, so that heat generated from the susceptor heated by a heater is conducted to the substrate through the susceptor cover. In this case, since the base is also provided with the through hole and the upper knock pin, the hole communicating with the through hole penetrates the base cover.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2014-75579
Patent document 2: japanese laid-open patent publication No. 2012 and 216774
SUMMERY OF THE UTILITY MODEL
Problem to be solved by utility model
The portion of the hole of the susceptor cover communicating with the through hole of the susceptor does not have the susceptor cover, and heat cannot be conducted from the susceptor cover to the substrate, and a portion of the substrate located above the portion of the hole cannot be sufficiently heated, and thus a local temperature decrease may occur in the substrate surface.
The purpose of the present disclosure is to suppress a local temperature drop at a portion of a substrate placed on a susceptor cover, the portion being located above a portion of a hole of the susceptor cover that communicates with a through hole of a susceptor, and to obtain a desired temperature distribution in a substrate surface.
Means for solving the problems
Scheme 1's utility model provides a base lid, its characterized in that carries the upper surface of arranging the base in locating the substrate processing chamber in, and above-mentioned base lid possesses: a first through hole for inserting a top pin on the substrate for lifting the substrate above the base cover; and a second through-hole different from the first through-hole.
The utility model of claim 2 is characterized in that, on the basis of the base cover described in claim 1, one or more second through holes are provided on both sides of the first through hole.
A utility model of claim 3 is characterized in that, in the base cover according to claim 1, a third through hole different from the first through hole and the second through hole is provided, and the third through hole is provided in the center of the base cover.
The utility model of claim 4 is characterized in that, on the basis of the base cover described in claim 1, the diameter of the second through hole is smaller than the diameter of the first through hole.
The utility model of scheme 5 provides a substrate processing apparatus, its characterized in that possesses: a substrate processing chamber for processing a substrate; a susceptor having a heater and disposed in the substrate processing chamber; a base cover placed on the upper surface of the base; and a substrate lift pin for lifting the substrate above the base cover, wherein the base cover further comprises: the top pin on the substrate is inserted through the first through hole on the inner side; and a second through-hole different from the first through-hole.
Effect of the utility model
According to the technique of the present disclosure, a local temperature decrease in a portion of the substrate placed on the susceptor cover, which is located above a portion of the hole of the susceptor cover communicating with the through hole of the susceptor, can be suppressed, and a desired temperature distribution can be obtained in the substrate surface.
Drawings
Fig. 1 is a schematic cross-sectional view of a substrate processing apparatus according to a first embodiment of the present disclosure.
Fig. 2 is a schematic view illustrating a principle of plasma generation of the substrate processing apparatus according to the first embodiment of the present disclosure.
Fig. 3 is a block diagram showing a configuration of a control unit (control means) of the substrate processing apparatus according to the first embodiment of the present disclosure.
Fig. 4 is a schematic view showing a case where the first through-hole and the second through-hole have the same diameter.
Fig. 5 is a schematic view showing a state where the susceptor heater is not present directly below the second through-hole in the case where the second through-hole has a larger diameter than the first through-hole.
Fig. 6 is a plan view showing a part of the base and the base cover of fig. 5.
Fig. 7 is a schematic view showing a state in which the susceptor heater is present directly below the second through-hole when the second through-hole has a larger diameter than the first through-hole.
Fig. 8 is a plan view showing a part of the base and the base cover of fig. 7.
Fig. 9 is a plan view showing a modification of the base cover of the present disclosure.
Fig. 10 is a graph showing the thickness of the silicon oxide film of the wafer of the example.
Detailed Description
(1) Structure of substrate processing apparatus
Hereinafter, a substrate processing apparatus according to an embodiment of the present disclosure will be described with reference to fig. 1 and 2. The substrate processing apparatus according to the present embodiment is configured to mainly perform oxidation processing on a film formed on a substrate surface.
(treatment Chamber)
The substrate processing apparatus 100 includes a processing furnace 202 that performs plasma processing on a substrate 200. The processing furnace 202 is provided with a processing container 203 constituting a processing chamber 201. The processing container 203 includes a dome-shaped upper container 210 as a first container and a bowl-shaped lower container 211 as a second container. The upper container 210 is covered on the lower container 211, thereby forming the process chamber 201. The upper container 210 is made of a material that transmits electromagnetic waves, for example, a non-metallic material such as quartz (SiO 2).
The lower container 211 is formed of, for example, aluminum (Al). Further, a gate valve 244 is provided on a lower side wall of the lower container 211.
The processing chamber 201 has: a plasma generation space 201a (see fig. 2) having an electromagnetic field generating electrode 212 formed of a resonance coil provided therearound; and a substrate processing space 201b (see fig. 2) communicating with the plasma generation space 201a and processing the substrate 200. The plasma generation space 201a is a space for generating plasma, and is a space above the lower end of the electromagnetic-field generating electrode 212 and below the upper end of the electromagnetic-field generating electrode 212 in the processing chamber. On the other hand, the substrate processing space 201b is a space in which a plasma is used to process a substrate, and is a space below the lower end of the electromagnetic-field generating electrode 212.
(Foundation)
A susceptor 217 serving as a substrate mounting portion on which the substrate 200 is mounted is disposed at the center of the bottom side of the processing chamber 201. The susceptor 217 is circular in plan view, and is composed of an upper surface portion 217d and a lower surface portion 217e made of the same material, and a susceptor heater 217b interposed therebetween. The upper surface 217d and the lower surface 217e are made of a non-metal material such as aluminum nitride (AlN), ceramic, or quartz. In the present embodiment, the upper surface 217d and the lower surface 217e are made of transparent quartz as a material that transmits infrared components of emitted light emitted from the susceptor heater 217b described later.
A susceptor heater 217b serving as a heating mechanism 110 configured to emit infrared rays to heat the substrate 200 accommodated in the processing chamber 201 is integrally embedded between the upper surface portion 217d and the lower surface portion 217e in the susceptor 217 for processing the substrate 200 in the processing chamber 201. Specifically, the susceptor heater 217b is inserted into a groove provided on the lower surface of the upper surface portion 217d, and covered with the lower surface portion 217e from the lower side thereof. The susceptor heater 217b is configured to be able to heat the surface of the substrate 200 to, for example, about 25 to 800 ℃. The susceptor heater 217b is made of, for example, silicon carbide (SiC), carbon, or molybdenum, and particularly preferably made of SiC.
The susceptor heater 217b mainly emits light having a wavelength (about 0.7 to 1000 μm) in the infrared region. Particularly, in the case of the susceptor heater 217b made of SiC, the supplied current emits infrared rays having a wavelength of, for example, about 1 to 20 μm, more preferably about 1 to 15 μm. The peak wavelength of the infrared ray in this case is, for example, about 5 μm. In order to emit a sufficient amount of infrared rays, the temperature of the susceptor heater 217b is preferably raised to 500 ℃ or higher, more preferably 1000 ℃ or higher. In the present specification, the expression of a numerical range of "1 to 20 μm" means that both the lower limit and the upper limit are included in the range. For example, "1 to 20 μm" means "1 μm or more and 20 μm or less". Other numerical ranges are also possible.
The base 217 is provided with a base lifting mechanism 26 having a driving mechanism for lifting and lowering the base 217. Further, the base 217 is provided with a first through hole 217a as a through hole having a circular shape in plan view, and the lower container 211 is provided with a substrate lift pin 266 on the bottom surface thereof.
The upper surface of the base 217 is covered by the base cover 300. The base cover 300 has a circular shape smaller than the base 217 by one turn in a plan view, and the upper surface portion 217d and the lower surface portion 217e are formed of different materials, for example, SiC. The base cover 300 is provided with a second through hole 300a communicating with the first through hole 217a of the base 217. The second through-hole 300a is a circular through-hole in plan view, and has an inner diameter larger than that of the first through-hole 217 a.
The first through-hole 217a, the second through-hole 300a, and the substrate upper pin 266 are provided at least at three positions facing each other. When the susceptor 217 is lowered by the susceptor lifting mechanism 268, the substrate upper pins 266 penetrate the first through-hole 217a and the second through-hole 300 a.
The substrate support portion 400 of the present embodiment is mainly constituted by the base 217 and the base cover 300.
(Process gas supply section)
The process gas supply unit 120 for supplying a process gas into the process container 203 is configured as follows.
A gas supply head 236 is provided above the process chamber 201, i.e., above the upper container 210. The gas supply head 236 includes a cap-shaped cover 233, a gas inlet 234, a buffer chamber 237, an opening 238, a shield plate 240, and a gas outlet 239, and is configured to be able to supply a reaction gas into the processing chamber 201.
Oxygen (O) as an oxygen-containing gas is supplied to the gas inlet 234 so as to join2) A gas oxygen-containing gas supply pipe 232a for supplying hydrogen (H) as a hydrogen-containing gas2) A hydrogen-containing gas supply pipe 232b for supplying a gas, and an inert gas supply pipe 232c for supplying an argon (Ar) gas as an inert gas. O is provided to the oxygen-containing gas supply pipe 232a2A gas supply source 250a, an MFC (mass flow controller) 252a as a flow rate control device, and a valve 253a as an on-off valve. H is provided in the hydrogen-containing gas supply pipe 232b2Gas supply 250b, MFC252b, valve 253 b.The inert gas supply pipe 232c is provided with an Ar gas supply source 250c, an MFC252c, and a valve 253 c. The downstream side of the supply pipe 232 after the confluence of the oxygen-containing gas supply pipe 232a, the hydrogen-containing gas supply pipe 232b, and the inert gas supply pipe 232c is provided with a valve 243a and is connected to the gas introduction port 234.
The process gas supply unit 120 (gas supply system) according to the present embodiment is mainly configured by a gas supply head 236, an oxygen-containing gas supply pipe 232a, a hydrogen-containing gas supply pipe 232b, an inert gas supply pipe 232c, MFCs 252a, 252b, and 252c, and valves 253a, 253b, 253c, and 243 a.
(exhaust part)
A gas discharge port 235 for discharging the gas medium in the processing chamber 201 is provided in a side wall of the lower container 211. An upstream end of the gas discharge pipe 231 is connected to the gas discharge port 235. The gas discharge pipe 231 is provided with an apc (auto Pressure controller)242 as a Pressure regulator (Pressure adjustment unit), a valve 243b as an on-off valve, and a vacuum pump 246 as a vacuum exhaust device.
The gas discharge port 235, the gas discharge pipe 231, the APC242, and the valve 243b mainly constitute the gas discharge unit of the present embodiment. Further, the vacuum pump 246 may be included in the exhaust unit.
(plasma generating section)
An electromagnetic field generating electrode 212 formed of a helical resonance coil is provided on the outer periphery of the processing chamber 201, that is, on the outer side of the side wall of the upper container 210 so as to surround the processing chamber 201. The electromagnetic field generating electrode 212 is connected to an RF sensor 272, a high-frequency power source 273, and an integrator 274 for integrating the impedance and output frequency of the high-frequency power source 273. The electromagnetic field generating electrode 212 is disposed along the outer peripheral surface of the processing container 203 so as to be separated from the outer peripheral surface, and is configured to generate an electromagnetic field in the processing container 203 by being supplied with a high-frequency circuit (RF power). That is, the electromagnetic field generating electrode 212 of the present embodiment is an Inductively Coupled Plasma (ICP) type electrode.
The high-frequency power source 273 supplies RF power to the electromagnetic-field generating electrode 212. The RF sensor 272 is provided on the output side of the high-frequency power source 273, and monitors information of the supplied high-frequency forward wave and reflected wave. The reflected wave power monitored by the RF sensor 272 is input to the integrator 274, and the integrator 274 controls the impedance of the high-frequency power source 273 and the frequency of the output RF power so as to minimize the reflected wave based on the information of the reflected wave input from the RF sensor 272.
The resonance coil serving as the electromagnetic-field generating electrode 212 has a winding diameter, a winding pitch, and a number of turns set to resonate at a predetermined wavelength in order to form a standing wave of a predetermined wavelength. That is, the electrical length of the resonance coil is set to a length corresponding to an integral multiple of one wavelength of the predetermined frequency of the high-frequency power supplied from the high-frequency power source 273.
Both ends of the resonance coil as the electromagnetic-field generating electrode 212 are electrically grounded, and at least one end thereof is grounded via the movable tap 213. The other end of the resonance coil is provided via a fixed ground 214. Further, in order to finely adjust the impedance of the resonance coil, a power supply portion is formed by the movable tap 215 between the grounded both ends of the resonance coil.
The shield plate 223 is provided to shield an electric field outside the resonance coil as the electromagnetic-field generating electrode 212.
The electromagnetic field generating electrode 212, the RF sensor 272, and the integrator 274 constitute the plasma generating unit of the present embodiment. The plasma generating portion may include a high-frequency power source 273.
Here, the principle of generating plasma and the properties of the generated plasma in the apparatus according to the present embodiment will be described with reference to fig. 2.
In the plasma generation circuit including the electromagnetic field generating electrode 212, when plasma is generated, the actual resonance frequency slightly varies depending on variations in capacitive coupling between the voltage portion of the resonance coil and the plasma, variations in inductive coupling between the plasma generation space 201a and the plasma, an excited state of the plasma, and the like.
Therefore, in the present embodiment, the integrator 274 increases or decreases the impedance or output frequency of the high-frequency power source 273 so as to minimize the reflected wave power based on the reflected wave power from the electromagnetic-field generating electrode 212 at the time of plasma generation detected by the RF sensor 272.
With this configuration, since high-frequency power having the actual resonance frequency of the resonance coil including plasma is supplied to the electromagnetic-field generating electrode 212 of the present embodiment as shown in fig. 2, a standing wave in which the phase voltage and the anti-phase voltage are constantly cancelled is formed. When the electrical length of the resonance coil as the electromagnetic-field generating electrode 212 is equal to the wavelength of the high-frequency power, the highest phase power is generated at the electrical midpoint of the coil (node where the voltage is zero). Thus, in the vicinity of the electrical midpoint, there is substantially no capacitive coupling with the chamber wall and the susceptor 217, and an annular inductive plasma with an extremely low potential is formed.
(control section)
The controller 291 as a control unit is configured to control the APC242, the valve 243B, and the vacuum pump 246 via a signal line a, the susceptor lift 268 via a signal line B, the heater power adjustment mechanism 276 via a signal line C, the gate valve 244 via a signal line D, the RF sensor 272, the high-frequency power source 273, and the integrator 274 via a signal line E, and the MFCs 252a to 252C and the valves 253a to 253C, and 243a via a signal line F.
As shown in fig. 3, the controller 291 as a control unit (control means) is configured as a computer including a cpu (central Processing unit)291a, a RAM (Random Access Memory)291b, a storage device 291c, and an I/O port 291 d. The RAM291b, the storage 291c, and the I/O port 291d can exchange data with the CPU291a via the internal bus 291 e. An input/output device 292 configured as, for example, a touch panel, a display, or the like is connected to the controller 291.
The storage 291c is, for example, a flash memory, an hdd (hard Disk drive), or the like. The storage 291c is stored with a readable program for controlling the operation of the substrate processing apparatus, a process recipe describing the order, conditions, and the like of substrate processing described later, and the like. The process recipe is a combination of the sequences of substrate processing steps described later so that the controller 291 can execute the steps to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to simply as a program.
The I/O port 291d is connected to the MFCs 252a to 252c, the valves 253a to 253c, 243a, and 243b, the gate valve 244, the APC242, the vacuum pump 246, the RF sensor 272, the high-frequency power source 273, the integrator 274, the susceptor lift mechanism 268, the heater power adjustment mechanism 276, and the like.
The CPU291a is configured to read and execute a control program from the storage 291c, and read a process recipe from the storage 291c in accordance with input of an operation instruction from the input/output device 292, and the like. Then, the CPU291a controls the opening degree adjustment operation of the APC242, the opening and closing operation of the valve 243B, and the start and stop of the vacuum pump 246 through the I/O port 291D and the signal line a in accordance with the contents of the read process recipe, controls the raising and lowering operation of the susceptor raising and lowering mechanism 268 through the signal line B, controls the supply power amount adjustment operation (temperature adjustment operation) of the heater power adjustment mechanism 276 to the susceptor heater 217B through the signal line C, controls the opening and closing operation of the gate valve 244 through the signal line D, controls the operations of the RF sensor 272, the integrator 274, and the high-frequency power source 273 through the signal line E, and controls the flow rate adjustment operations of the MFCs 252a to 252C and the opening and closing operations of the valves 253a to 253C, and 243a through the signal line F.
The controller 291 can be configured by installing the program stored in the external storage device 293 in a computer. The storage 291c and the external storage 293 are configured as computer-readable storage media. Hereinafter, they are collectively referred to simply as storage media.
< base cover >
As described above, the substrate processing apparatus 100 according to the embodiment of the present disclosure includes: a process chamber 201 accommodating the substrate 200; and a substrate support part 400 provided in the processing chamber 201 and including a susceptor 217 supporting the substrate 200 and a susceptor cover 300 disposed on an upper surface of the susceptor 217. The susceptor 217 is a heating body for heating the substrate 200, and includes a susceptor heater 217b made of a heating bare wire and first through holes 217a serving as through holes provided at a plurality of positions avoiding the susceptor heater 217 b. The base cover 300 has a plurality of second through holes 300a communicating with the first through holes 217a and having a diameter larger than that of the first through holes 217 a.
In other words, in the susceptor cover 300, in the substrate processing apparatus 100 having the processing chamber 201 for accommodating the substrate 200, the substrate supporting part 400 provided in the processing chamber 201 includes the susceptor cover 300, and the susceptor cover 300 is disposed on the upper surface of the susceptor 217 for supporting the substrate 200. The susceptor cover 300 has a plurality of second through holes 300a, the susceptor 217 has a susceptor heater 217b as a heating element for heating the substrate 200 and a plurality of first through holes 217a as through holes provided at positions avoiding the susceptor heater 217b, and the second through holes 300a communicate with the first through holes 217a of the susceptor 217 and have a diameter larger than that of the first through holes 217 a.
As shown in fig. 4, when the diameters of the first through-hole 217a and the second through-hole 300a are the same, the radiant light (hereinafter, referred to as "direct radiant light". the solid arrow in the figure) generated from the susceptor heater 217b cannot be transmitted as heat by radiation to the portion of the substrate 200 located directly above the second through-hole 300a (the portion a surrounded by the broken line in the figure). In addition, the radiant light from the susceptor 217 heated by the susceptor heater 217b (hereinafter referred to as "indirect radiant light") cannot be transferred to the portion a as heat by the radiation method. Therefore, the portion a is said to be insufficiently heated compared to other portions, and a local temperature decrease may occur in the surface of the substrate 200. Therefore, for example, when a film formation process is performed, the film thickness formed on the upper surface of the portion a may be locally reduced, and the uniformity of the process in the surface of the substrate 200 may be reduced.
On the other hand, as shown in fig. 1, since the diameter of the second through hole 300a is larger than that of the first through hole 217a, a part of the surface of the base 217 is exposed upward from the second through hole 300 a. The radiation light from the susceptor 217 reaches a portion of the substrate 200 located directly above the second through hole 300a from the exposed portion, and the portion is sufficiently heated by the radiation. That is, when it is necessary to provide the first through-hole 217a and the second through-hole 300a in the susceptor 217 and the susceptor cover 300, respectively, for the arrangement of the lift pins 266 on the substrate, etc., it is possible to suppress a local decrease in temperature around the second through-hole 300a in the surface of the heated substrate 200 and to adjust the temperature distribution in the surface of the substrate 200. In particular, the in-plane temperature uniformity of the substrate 200 can be improved.
More specifically, by setting the diameters of the first through hole 217a and the second through hole 300a so that at least one of the directly radiated light emitted from the heated susceptor heater 217b and the indirectly radiated light emitted from the susceptor 217 directly irradiates the substrate 200, it is possible to suppress a local decrease in the in-plane temperature of the substrate 200 around the second through hole 300 a.
Further, by changing the shape of the base cover 300 (particularly, the diameter of the second through hole 300 a), the uniformity of the in-plane temperature distribution can be adjusted without changing the arrangement pattern of the base heater 217b in the base 217. In other words, even if the same susceptor 217 is used, the uniformity of the in-plane temperature distribution can be adjusted by changing the shape of the susceptor cover 300.
Here, in the present embodiment, the susceptor 217, the first through-hole 217a, and the second through-hole 300a are disposed so that the substrate 200 is irradiated with indirect radiant light, which is radiant light from the susceptor 217 heated by the heated susceptor heater 217b, through the second through-hole 300 a.
That is, as shown in fig. 5 and 6, when the second through-hole 300a has a larger diameter than the first through-hole 217a, even when the susceptor heater 217b is not present directly below the second through-hole 300a, the portion a located directly above the second through-hole 300a in the substrate 200 can be sufficiently heated by indirect radiant light (indicated by a broken-line arrow in the drawing) from the susceptor 217 heated by the susceptor heater 217 b. When the direct radiation light emitted from the susceptor heater 217b obliquely enters the surface (interface) of the susceptor 217 exposed from the second through hole 300a, a part of the direct radiation light may pass through the second through hole 300a without being reflected, reach the portion a, and participate in heating. The smaller the distance between the second through hole 300a and the base heater 217b in plan view, the larger the amount of such direct radiation, and the larger the distance, the smaller the amount of such direct radiation. In particular, if the distance increases and the incident angle to the surface (interface) of the susceptor 217 exposed from the second through hole 300a exceeds the critical angle, such directly radiated light does not substantially reach the portion a and does not participate in heating.
Here, as shown in fig. 6, the susceptor heater 217b is formed in a pattern avoiding the first through hole 217a in order to secure a space for providing the first through hole 217a through which the lift pin 266 moves up and down on the substrate. In the example shown in fig. 6, in particular, the susceptor heater 217b is folded back in the front so as to avoid the area vertically below the second through hole 300 a. According to this configuration, the substrate 200 is indirectly irradiated with the directly radiated light from the susceptor heater 217b without being irradiated with the substrate 200, and local excessive heating can be suppressed.
In the present embodiment, the susceptor heater 217b and the second through hole 300a may be disposed so that the substrate 200 is irradiated with the radiated light from the heated susceptor heater 217b, that is, the directly radiated light, through the second through hole 300 a.
That is, as shown in fig. 7 and 8, when the second through hole 300a has a larger diameter than the first through hole 217a and the susceptor heater 217b is present directly below the second through hole 300a, direct radiation light (indicated by a straight arrow in the figure) from the susceptor heater 217b reaches the portion a of the substrate 200 directly above the second through hole 300a in addition to indirect radiation light (indicated by a broken arrow in the figure) from the susceptor 217 heated by the susceptor heater 217b, and the portion a is sufficiently heated.
Here, as shown in fig. 8, the susceptor heater 217b is disposed so that at least a portion thereof overlaps with a region vertically below the second through hole 300 a. According to such a configuration, since the substrate 200 is irradiated with the direct radiant light from the susceptor heater 217b, the local heating by the radiant light can be promoted. As shown in fig. 8, the susceptor heater 217b has a concave portion 217c formed to surround the first through-hole 217a on the outside of the turn, and the concave portion 217c is disposed so as to overlap a region vertically below the second through-hole 300 a.
The substrate processing apparatus 100 according to the present embodiment further includes a substrate lifting mechanism for lifting and lowering the substrate 200 above the substrate support portion 400, and the first through-hole 217a and the second through-hole 300a are formed so as to be capable of vertically moving the substrate upper pins 266 constituting the substrate lifting mechanism through the inside thereof.
That is, the substrate lifting mechanism is composed of a susceptor lifting mechanism 268 and an on-substrate lift pin 266, and the on-substrate lift pin 266 penetrating the first through hole 217a and the second through hole 300a lifts and lowers the substrate 200 relative to the susceptor 217 in accordance with the vertical movement of the susceptor 217 by the susceptor lifting mechanism 268. In the case of using such a substrate lifting mechanism, it is necessary to provide holes for penetrating the substrate upper pins 266 in the susceptor 217 and the susceptor cover 300, but by configuring the first through-holes 217a and the second through-holes 300a as in the present embodiment, it is possible to alleviate local reduction in the in-plane temperature of the substrate 200 caused by these through-holes and obtain a desired in-plane temperature distribution. In the present embodiment, the first through-hole 217a and the second through-hole 300a are disposed on the same axis.
In the substrate processing apparatus 100 according to the present embodiment, as shown in fig. 6 and 8, the upper surface of the susceptor 217 is exposed through the second through hole 300a in a plan view. With this configuration, the indirectly radiated light radiated from the exposed upper surface of the susceptor 217 can be irradiated to the substrate 20 through the second through-hole 300 a.
Here, as shown in fig. 1, 5, and 7, since the susceptor heater 217b itself is disposed inside the susceptor 217 composed of two members, the substrate 200 is heated by heat conduction and heat radiation through the susceptor 217. The susceptor heater 217b may be provided in contact with the lower surface of the susceptor 217 formed of one member. In this case, the substrate 200 is also heated by heat transfer and heat radiation via the susceptor 217. In either case, the susceptor heater 217b is provided at a position where the direct radiation light radiated from the susceptor heater 217b is irradiated to at least one of the susceptor cover 300 and the substrate 200 through the susceptor 217.
In the present embodiment, the material of the base 217 is different from that of the base cover 300. When the base 217 is formed of two members, i.e., the upper surface portion 217d and the lower surface portion 217e, at least the material of the upper surface portion 217d is different from the material of the base cover 300. Further, the base cover 300 is preferably made of a material that shields both indirect radiation light, which is radiation light from the base 217 heated by the heated base heater 217b, and direct radiation light, which is radiation light from the heated base heater 217 b. Here, the shielding of the indirect radiation light and the direct radiation light means that heating by direct radiation from the susceptor heater 217b and indirect radiation from the heated susceptor 217 is substantially cut off. Accordingly, the substrate 200 is heated by the direct radiation light and the indirect radiation light radiated from the susceptor heater 217b and the susceptor 217 only by the radiation through the second through hole 300 a. "substantially" means that a slight amount of indirectly radiated light and directly radiated light is allowed to pass therethrough to such an extent that heating is not caused to the extent necessary for forming the substrate.
Specifically, the material of the base cover 300 has a lower transmittance than the material of the base 217 with respect to the wavelength of the radiation light emitted from the base heater 217b, which is transmitted through the material of the base 217. Further, the material of the base cover 300 is preferably higher in thermal conductivity than the material of the base 217. In the present embodiment, the material of the susceptor 217 is transparent quartz, and the material of the susceptor cover 300 is SiC.
The diameter of the second through-hole 300a is set to a size that allows the in-plane temperature distribution of the substrate 200 to be a desired distribution. Alternatively, the diameter of the second through hole 300a is set to a size that maximizes the in-plane temperature distribution of the substrate 200. Alternatively, the diameter of the second through hole 300a is set according to the amount of directly radiated light radiated from the susceptor heater 217 b. Alternatively, the diameter of the second through hole 300a is set according to the temperature of the susceptor heater 217b at the time of processing the substrate 20. This is because the amount and spectrum of the direct radiation light vary according to the temperature of the susceptor heater 217 b. Alternatively, the diameter of the second through hole 300a is set according to the characteristic (wavelength) of the wavelength of the light absorbed by the substrate 200.
Fig. 9 is a plan view showing a modification of the base cover of the present disclosure. The base cover 300' in fig. 9 is a plan view in which the shape of the base cover 300 is improved in order to further improve temperature uniformity in the substrate surface. The material of the susceptor cover 300' is the same as that of the susceptor cover 300, and is, for example, silicon carbide (SiC).
In the base cover 300 'in fig. 9, the through hole 300a' corresponds to a second through hole 300a (a hole through which the substrate knock pin 266 penetrates) provided in the base cover 300.
In the susceptor cover 300 ', in order to adjust the temperature distribution in the surface of the substrate to a desired temperature distribution when the substrate placed on the susceptor cover 300' is heated by the susceptor heater 217b, 2 (4 × 3 in total to 12) small through-holes 300b 'are newly provided on both sides of each through-hole 300 a'. By providing the through-hole 300b ', the radiation light from the susceptor 217 can be directly irradiated to the substrate, and the temperature in the substrate surface in the vicinity of the through-hole 300b ' can be increased, similarly to the through-hole 300a ' having a large diameter. Therefore, by adjusting the position, number, and size of the through holes 300b', the temperature distribution in the substrate surface can be adjusted. In the case of the base cover 300 ', the through-hole 300b' is disposed near the through-hole 300a 'because a temperature drop is particularly likely to occur near the through-hole 300a' through which the substrate lift-out pin 266 passes.
In the example of fig. 9, two through holes 300b 'are disposed on both sides of the through hole 300a', but the number and position are not limited thereto, and the temperature distribution can be adjusted by providing one or a plurality of any number of through holes 300b 'beside or outside the through hole 300 a'. The same applies to the size of the through-hole 300 b'.
In addition, in the base cover 300 ', a through hole 300c ' is further provided near the center of the base cover 300 '. The through-hole 300c 'is a hole newly provided to adjust the temperature distribution in the substrate surface, basically the same as the through-hole 300 b'. Since the temperature near the center of the substrate may decrease depending on the pattern (arrangement) of the wiring of the susceptor heater 217b, the susceptor cover 300 'is further provided with a through hole 300c' to compensate for the temperature decrease.
As with the through-hole 300b ', one or more through-holes 300c ' may be provided near the center of the base cover 300 '. The same applies to the size of the through-hole 300 c'.
Other embodiments of the disclosure
In the above-described embodiments, the examples of performing the oxidation treatment and the nitridation treatment on the substrate surface by using the plasma have been described, but the present disclosure is not limited to these treatments, and the present disclosure can be applied to a technique of performing the heat treatment on the substrate placed on the substrate support portion including the susceptor and the susceptor cover. For example, the present invention can be applied to a film formation process for forming a film on a substrate surface, a modification process for a film formed on a substrate surface, a doping process, a reduction process for an oxide film, an etching process for the film, an ashing process for a resist film, and the like.
Examples
In the embodiment, the susceptor cover 300 made of SiC having a circular shape in plan view (diameter 316mm) and having three second through holes 300a arranged at equal intervals in the vicinity of the edge is used. In the base cover 300 of the embodiment, the diameters of the second through holes 300a are set to 12mm, 15mm, and 20 mm.
In the processing chamber 201 described in the above embodiment, the susceptor cover 300 is attached to the upper surface of the susceptor 217 in which the first through holes 217a each having a diameter of 6.5mm are arranged at three corresponding positions at equal intervals so that the axial centers of the second through holes 300a and the first through holes 217a coincide with each other. The susceptor 217 is a susceptor in which a SiC susceptor heater 217b is sandwiched between two members, an upper surface portion 217d and a lower surface portion 217e, which are made of transparent quartz. A wafer made of single crystal silicon having a diameter of 300mm and a thickness of 1mm is placed on the susceptor cover 300 as a substrate 200. In this state, a silicon oxide film (SiO2 film) was formed on the wafer under the below-described oxidation conditions.
Wafer temperature: 700 deg.C
Flow rate of process gas: O2/H2 of 1900sccm/100sccm
Pressure in the treatment chamber: 150Pa
Processing time: 600 seconds
After the treatment under the above-described oxidation conditions, the thickness of the SiO2 film formed on the wafer was measured for each part in the wafer surface. Here, the higher the temperature, the more the thickness of the SiO2 film on the wafer increases. Thus, it means that the thicker the SiO2 film, the higher the temperature reached at that site.
FIG. 10 is a graph showing SiO of a wafer in the example2The thickness of the film. Here, the vertical axis of the graph represents SiO2The thickness of the film (unit:
). In addition, the first and second substrates are,the horizontal axis of the graph indicates a measurement point corresponding to one round from the vicinity of one second through hole 300a to the vicinity of the original second through hole 300a after passing through two other second through holes 300a in the axial direction. In this graph, three points indicated by arrows are points corresponding to the centers of the second through holes 300a, respectively. In this graph, the point indicated by the left arrow corresponds to the center of the second through hole 300a having a diameter of 15mm, the point indicated by the center arrow corresponds to the center of the second through hole 300a having a diameter of 20mm, and the point indicated by the right arrow corresponds to the center of the second through hole 300a having a diameter of 12 mm.
In the graph of fig. 10, it is assumed that the temperature of the portion corresponding to each second through hole 300a in the wafer serving as the substrate 200 is lower than the surrounding temperature, and these points represent minimum values. However, from the graph of fig. 10 in the example, it is understood that SiO corresponding to each second through-hole 300a2None of the film thicknesses show a minimum. That is, it is understood that no local temperature decrease occurs in any of the portions corresponding to the second through holes 300a in the embodiment. Specifically, it can be seen that SiO is present at a position corresponding to the second through-hole 300a having a diameter of 12mm2The thickness of the film shows the same degree as the thickness of the film at the peripheral position. In addition, it can be seen that SiO at the position corresponding to the second through-hole 300a having a diameter of 15mm and a diameter of 20mm2The thickness of the film showed maximum values with respect to the film thickness at the peripheral position. That is, in the wafer serving as the substrate 200, SiO is present in a portion corresponding to the second through-hole 300a2The film is formed to have the same thickness or a larger thickness than its surroundings. Therefore, it was confirmed that by making the diameter of the second through-hole 300a larger than that of the first through-hole 217a, the temperature of the corresponding portion is increased, and the effect of alleviating the local temperature decrease can be obtained.
In addition, it is understood from the graph that, particularly, the larger the diameter of the second through hole 300a is, the higher the temperature of the portion of the wafer as the substrate 200 corresponding to the second through hole 300a is. That is, it was confirmed that the temperature of the corresponding portion can be adjusted to be increased by enlarging the diameter of the second through hole 300 a.
In the case of the present embodiment, when the diameter of the second through-hole 300a is 15mm or 20mm, the result that the temperature of the corresponding portion is locally higher than the temperature of the peripheral portion is remarkable. Therefore, from the viewpoint of improving the in-plane temperature uniformity of the substrate 200, it is estimated that the diameter of the second through-hole 300a is appropriate to be in a range of about 1.5 times (i.e., in the case of a diameter of 12 mm) or more and less than about 2 times (i.e., in the case of a diameter of 15 mm) the diameter of the first through-hole 217 a.
Availability in production
According to the technique of the present disclosure, a local temperature decrease in a portion of the substrate placed on the susceptor cover, which is located above a portion of the hole of the susceptor cover communicating with the through hole of the susceptor, can be suppressed, and a desired temperature distribution can be obtained in the substrate surface.
Claims (5)
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| CN202122279587.2U CN216161684U (en) | 2021-09-18 | 2021-09-18 | Base cover and substrate processing device |
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| CN202122279587.2U CN216161684U (en) | 2021-09-18 | 2021-09-18 | Base cover and substrate processing device |
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