CN215713337U - Cavity structure of magnetron sputtering machine - Google Patents
Cavity structure of magnetron sputtering machine Download PDFInfo
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- CN215713337U CN215713337U CN202122246519.6U CN202122246519U CN215713337U CN 215713337 U CN215713337 U CN 215713337U CN 202122246519 U CN202122246519 U CN 202122246519U CN 215713337 U CN215713337 U CN 215713337U
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- target
- magnet
- platen
- back plate
- glass substrate
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 abstract description 12
- 239000013077 target material Substances 0.000 abstract description 9
- 150000002500 ions Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The utility model discloses a cavity structure of a magnetron sputtering machine, which comprises a magnet, a glass substrate, a copper back plate, a target material, a coil, masks, a platen and a compensating magnet, wherein the copper back plate is arranged at the bottom of the platen, the glass substrate is arranged on the bottom surface of the platen, the target material is arranged on the top surface of the copper back plate, the magnet is arranged at the bottom of the copper back plate, two compensating magnets are symmetrically arranged at the top of the platen, each compensating magnet is sleeved with a coil, two masks are symmetrically arranged between the platen and the copper back plate, and the target material and the glass substrate are both arranged between the two masks; by improving the distribution of the magnetic field intensity, the particle emergence rate of each area of the target is optimized, particles in each area of the target are uniformly emergent, the interest rate of the target is improved, the target replacement frequency is reduced, and the utilization rate and the capacity of equipment are improved.
Description
Technical Field
The utility model belongs to the technical field of semiconductor industry, and particularly relates to a cavity structure of a magnetron sputtering machine.
Background
In the semiconductor industry, targets are mainly divided into cylindrical targets and planar targets, and the planar targets are mostly deposited by adopting a magnetron sputtering technology; magnetron sputtering, i.e. PVD (Physical Vapor Deposition), means that under vacuum conditions, an arc discharge technology of medium voltage and large current is adopted to ionize inert gas He to generate He ions, and the He bombards a target material to enable target material atoms to rotate and uniformly deposit on a substrate under the control of a magnetic field; electric and magnetic fields distributed in the magnetron sputtering technique; the electric field (negative bias, about several hundred V) has the function of restraining plasma (mainly electrons) near the target surface (forming non-uniform plasma), increasing the collision probability and improving the ionization efficiency; the magnetic field acts to confine the plasma to move under closed magnetic field lines and uniformly deposit on the substrate.
A cathode back plate in a traditional magnetron sputtering machine comprises a set of magnetic field system, the magnetron sputtering machine limits the motion track of target particles after emergence by controlling the size of a magnetic field, so that the target particles are uniformly deposited on a glass substrate, wherein the cathode magnetic field system in planar target sputtering is mostly controlled by a single magnet or multiple magnets, the magnets move back and forth on the cathode back plate, firstly do accelerated motion, then do uniform motion, and finally do decelerated motion, in the magnetron sputtering process, because the cathode magnets do not move at uniform velocity on the back of the target, the emergence rates of particles at all parts of the target are different, the film thickness uniformity of the film deposited on the substrate is large in regional difference, the TFT electrical property and the sputtered target are uneven, the overall utilization rate of the target can only reach 20% -30%, the waste of materials and the improvement of processing cost are caused, the traditional magnet control system has very low target utilization rate, and the target is frequently replaced, so that not only materials but also manpower and productivity are wasted, and therefore, the cavity structure of the magnetron sputtering machine is provided.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a cavity structure of a magnetron sputtering machine to solve the problems in the background technology.
In order to achieve the purpose, the utility model provides the following technical scheme: the cavity structure of the magnetron sputtering machine comprises a magnet, a glass substrate, a copper back plate, a target material, coils, a shade, a platen and a compensation magnet, wherein the copper back plate is arranged at the bottom of the platen, the glass substrate is arranged on the bottom surface of the platen, the target material is arranged on the top surface of the copper back plate, the magnet is arranged at the bottom of the copper back plate, two compensation magnets are symmetrically arranged at the top of the platen, and each compensation magnet is sleeved with a coil.
Preferably, two masks are symmetrically arranged between the platen and the copper back plate, and the target and the glass substrate are both positioned between the two masks.
Preferably, the two ends of the shade are respectively fixed with a positioning block, the bottom surface of the bedplate and the top surface of the copper back plate are respectively provided with two positioning grooves, and the positioning blocks are fixed in the positioning grooves.
Compared with the prior art, the utility model has the beneficial effects that: by improving the distribution of the magnetic field intensity, the particle emergence rate of each area of the target is optimized, particles in each area of the target are uniformly emergent, the interest rate of the target is improved, the target replacement frequency is reduced, and the utilization rate and the capacity of equipment are improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is an enlarged view of a portion of the utility model in the area E of FIG. 1;
FIG. 3 is a schematic diagram of the movement trace of the magnet of the present invention;
in the figure: 2. a magnet; 3. a glass substrate; 4. a copper back plate; 5. a target material; 6. a coil; 7. masking; 8. a platen; 9. make up the magnet.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Examples
Referring to fig. 1 to 3, the present invention provides a technical solution: a cavity structure of a magnetron sputtering machine comprises a magnet 2, a glass substrate 3, a copper back plate 4, a target 5, a coil 6, a shade 7, a platen 8 and a compensation magnet 9, wherein the copper back plate 4 is arranged at the bottom of the platen 8, the glass substrate 3 is arranged on the bottom surface of the platen 8, the target 5 is arranged on the top surface of the copper back plate 4, the magnet 2 is arranged at the bottom of the copper back plate 4, two compensation magnets 9 are symmetrically arranged at the top of the platen 8, the coil 6 is sleeved on each compensation magnet 9, the size of the magnetic field of the compensation magnet 9 and the direction of the magnetic field can be controlled by controlling the current in the coil 6, the magnetic field generated by the magnet 2 enables Ar ions excited by movement to bombard the target 5 in the area, target particles are sputtered and deposited on the glass substrate 3 at the corresponding position, however, the direction of the magnetic field generated by the compensation magnet 9 is opposite to that of the magnetic field generated by the magnet 2, the device has the effects of driving the excited Ar ions away from the target 5 in the area and reducing the bombardment of the Ar gas ions in the area on the target 5, so that the particle impact rate and the emergence rate of the target 5 in the area are reduced, the utilization rate of the target 5 is effectively improved, and the traditional residual target shape is prevented from being formed after the target 5 is used.
In this embodiment, preferably, two masks 7 are symmetrically arranged between the platen 8 and the copper back plate 4, the target 5 and the glass substrate 3 are both located between the two masks 7, positioning blocks are fixed to both ends of each mask 7, two positioning grooves are formed in both the bottom surface of the platen 8 and the top surface of the copper back plate 4, and the positioning blocks are fixed in the positioning grooves.
The working principle and the using process of the utility model are as follows: in order to avoid the formation of a traditional residual target shape after the target 5 is used, the back surface of the glass platen 8 is provided with a group of compensation magnets 9 and coils 6, the size of the magnetic field of the compensation magnets 9 and the direction of the magnetic field are controlled by controlling the current in the coils 6, when the target 5 is sputtered by a machine station, the magnet 2 starts to perform accelerated motion from the leftmost end A of the target 5, the moving distance L reaches the point B, the uniform motion is performed from the point B, the moving distance S reaches the point C, then the deceleration motion is performed from the point C, the moving distance L reaches the point D, and finally the three steps are repeated in the opposite direction to perform back-and-forth motion; wherein the acceleration phase has the longest average dwell time from point A to point B, and the deceleration phase, the longest average staying time from the point C to the point D is the maximum target particle emergence rate in the acceleration and deceleration area, at the moment, the current in the coil 6 on the compensation magnet 9 is started, the compensation magnet 9 generates a magnetic field in the direction opposite to that of the magnet 2, the target particles deposited on the glass substrate 3 corresponding to the area are correspondingly reduced, because the residence time of the magnet 2 in the area is longer than that of the constant speed area from the point B to the point C, the two pieces compensate each other, so that the target material emergence rate and the particle deposition rate in the accelerating area, the constant speed area and the decelerating area are the same, therefore, the problem of uneven shape of the residual target after sputtering of the target 5 is solved, the overall utilization rate of the target 5 is improved, and the film thickness uniformity of the film sputtered on the glass substrate 3 is improved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (3)
1. The utility model provides a cavity structures of magnetron sputtering board which characterized in that: including magnet (2), glass substrate (3), copper backplate (4), target (5), coil (6), shade (7), platen (8) and compensate magnet (9), copper backplate (4) set up the bottom at platen (8), glass substrate (3) set up the bottom surface at platen (8), target (5) set up the top surface at copper backplate (4), the bottom of copper backplate (4) is provided with magnet (2), the top symmetry of platen (8) is provided with two and compensates magnet (9), and every compensate all overlap and be equipped with coil (6) on magnet (9).
2. The cavity structure of the magnetron sputtering machine according to claim 1, wherein: two shields (7) are symmetrically arranged between the bedplate (8) and the copper back plate (4), and the target (5) and the glass substrate (3) are arranged between the two shields (7).
3. The chamber structure of a magnetron sputtering machine according to claim 2, characterized in that: locating blocks are fixed at two ends of the shade (7), two locating grooves are formed in the bottom surface of the bedplate (8) and the top surface of the copper back plate (4), and the locating blocks are fixed in the locating grooves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122246519.6U CN215713337U (en) | 2021-09-16 | 2021-09-16 | Cavity structure of magnetron sputtering machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122246519.6U CN215713337U (en) | 2021-09-16 | 2021-09-16 | Cavity structure of magnetron sputtering machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215713337U true CN215713337U (en) | 2022-02-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122246519.6U Active CN215713337U (en) | 2021-09-16 | 2021-09-16 | Cavity structure of magnetron sputtering machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215713337U (en) |
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2021
- 2021-09-16 CN CN202122246519.6U patent/CN215713337U/en active Active
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