CN215266618U - Microstrip conversion structure applied to 77GHz automobile radar - Google Patents

Abstract

The utility model relates to a microstrip transition structure applied to 77GHz automobile radar, which comprises an upper dielectric slab, an interval dielectric slab and a lower dielectric slab, wherein the upper dielectric slab is provided with a first microstrip line and a second microstrip line with different widths, and the first microstrip line and the second microstrip line are connected through a transition structure; the upper surface of the interval medium plate is provided with a first stratum, the edge of the first stratum is provided with a first sawtooth structure, the upper surface of the lower medium plate is provided with a second stratum, and the edge of the second stratum is provided with a second sawtooth structure. The utility model discloses an edge on two-layer stratum adds the sawtooth structure of suitable size, can effectively restrain the electromagnetism in the operating frequency of broad and reveal, improves and reveals the transmission performance that leads to the microstrip conversion because of the electromagnetic wave that different stratums arouse altogether and worsen to this simple structure need not to increase the structure of punching, does not have harsh restrictive condition to the machining level and the technique of PCB board factory, thereby can improve whole hardware performance under limited processing condition.

Description

Microstrip conversion structure applied to 77GHz automobile radar

Technical Field

The utility model relates to a radar antenna technical field, more specifically relates to a be applied to microstrip transform structure in 77GHz car radar's different stratum.

Background

ADAS and autopilot have raised higher requirements on various indexes of millimeter wave radar sensors, such as angle resolution capability, angle measurement precision and the like. In order to further improve the transmission rate of wireless communication and the resolution of radar, the 77/79GHz band is becoming a major direction for the development of automobile anti-collision radar.

From the technical aspect, the expansion of the radar working bandwidth provides a hardware basis for the improvement of the radar resolution, and therefore, the 77-81GHz broadband radar becomes the development trend of the automotive millimeter wave radar.

However, broadband antennas are difficult to implement with a single layer board, requiring a multi-layer structure, while the chip-to-antenna connection requires a switching structure that is designed with potentially small losses. Because it receives the restriction of punching technique in the current PCB board factory course of working, the common via hole realization of different layers ground is common ground, can lead to taking place electromagnetic leakage in the transform structure, reduces antenna performance, and the via hole design can increase cost, the processing degree of difficulty and reduce the machining precision moreover.

SUMMERY OF THE UTILITY MODEL

The utility model discloses an overcome among the prior art restriction that broadband antenna received PCB board punching technology, the via hole realization commonly used on different layers ground is common ground, can lead to taking place the electromagnetism among the transform structure and reveal, reduces the antenna performance, and via hole design can increase cost, the processing degree of difficulty and reduce the problem of machining precision moreover, provides a microstrip transform structure who is applied to the different stratum of 77GHz automobile radar.

A microstrip transition structure applied to a 77GHz automobile radar comprises an upper dielectric slab, an interval dielectric slab and a lower dielectric slab which are sequentially pressed from top to bottom, wherein a first microstrip line and a second microstrip line which are different in width are sequentially arranged on the upper surface of the upper dielectric slab along the length direction of the upper dielectric slab, and the first microstrip line and the second microstrip line are connected end to end through a transition structure; the upper surface of the interval medium plate is printed with a first stratum, the edge of the first stratum is provided with a first sawtooth structure, the upper surface of the lower medium plate is printed with a second stratum, and the edge of the second stratum is provided with a second sawtooth structure.

Further, as a preferred technical solution, a width of the first microstrip line is greater than a width of the second microstrip line, the first ground layer is located at a position of the spaced dielectric slab opposite to the second microstrip line, and the first sawtooth structure is disposed along an edge of the first ground layer facing a direction of the first microstrip line; the second ground layer is located at a position of the lower-layer dielectric slab opposite to the first microstrip line, and the second sawtooth structure is arranged along an edge of the second ground layer facing the direction of the second microstrip line.

Further, as a preferred technical solution, the lengths of the first ground layer and the second microstrip line are the same, and the lengths of the second ground layer and the first microstrip line are the same.

Further, as a preferred technical solution, a width of the first microstrip line is smaller than a width of the second microstrip line, the first ground layer is located at a position of the spaced dielectric slab opposite to the first microstrip line, and the first sawtooth structure is disposed along an edge of the first ground layer facing a direction of the second microstrip line; the second ground layer is located at a position of the lower-layer dielectric slab opposite to the second microstrip line, and the second sawtooth structure is arranged along an edge of the second ground layer facing the direction of the first microstrip line.

Further, as a preferred technical solution, the first ground layer has the same length as the first microstrip line, and the second ground layer has the same length as the second microstrip line.

Further, as a preferred technical solution, the center lines of the first microstrip line and the second microstrip line are overlapped; the lengths of the first microstrip line and the second microstrip line are the same or different; the impedance of the first microstrip line is matched with that of the second microstrip line.

Further, as a preferred technical scheme, the length range of the transition structure is 0.5-1 mm.

Further, as a preferred technical solution, the first sawtooth structures and the second sawtooth structures are multiple, and the bottom edges of the multiple first sawtooth structures are connected end to end and are arranged periodically along the edge of the first stratum; and the bottom edges of the second sawtooth structures are connected end to end and are arranged periodically along the edge of the second stratum.

Further, as a preferred technical solution, the first sawtooth structure and the second sawtooth structure have the same structure.

Further, as a preferred technical solution, the first sawtooth structure is an equilateral triangle, and the side length of the first sawtooth structure is 1/4 wavelengths.

Compared with the prior art, the utility model discloses technical scheme's beneficial effect is:

the utility model discloses an edge on two-layer stratum adds the sawtooth structure of suitable size, can effectively restrain the electromagnetism in the operating frequency of broad and reveal, improves and reveals the transmission performance that leads to the microstrip conversion because of the electromagnetic wave that different stratums arouse altogether and worsen to this simple structure need not to increase the structure of punching, does not have harsh restrictive condition to the machining level and the technique of PCB board factory, thereby can improve whole hardware performance under limited processing condition.

Drawings

Fig. 1 is a schematic diagram of a microstrip transition structure and a lamination layer of different layers of the present invention.

Fig. 2 is an electric field diagram of the microstrip transition structure between different layers of the 79GHz non-sawtooth structure of the present invention.

Fig. 3 is an electric field diagram of the microstrip transition structure between different layers of the 79GHz sawtooth structure of the present invention.

Fig. 4 is a reflection coefficient simulation diagram of the microstrip transition structure between different layers without adding the sawtooth structure.

Fig. 5 is a transmission coefficient simulation diagram of the microstrip transition structure between different layers without the sawtooth structure according to the present invention.

Fig. 6 is a reflection coefficient simulation diagram of the microstrip transition structure between different layers with the sawtooth structure according to the present invention.

Fig. 7 is a transmission coefficient simulation diagram of the microstrip transition structure between different layers with the sawtooth structure according to the present invention.

Detailed Description

The present invention will be further described with reference to the following embodiments.

The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", "top", "bottom", "inner", "outer", etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the drawings, the description is merely for convenience and simplicity of description, and it is not intended to indicate or imply that the devices or elements being referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore, the terms describing the positional relationships in the drawings are for illustrative purposes only and are not to be construed as limiting the present patent.

Furthermore, if the terms "first," "second," and the like are used for descriptive purposes only, they are used for mainly distinguishing different devices, elements or components (the specific types and configurations may be the same or different), and they are not used for indicating or implying relative importance or quantity among the devices, elements or components, but are not to be construed as indicating or implying relative importance.

Example 1

The embodiment discloses a microstrip conversion structure applied to a 77GHz automobile radar, as shown in fig. 1: the microstrip line structure comprises an upper dielectric plate 1, an interval dielectric plate 2 and a lower dielectric plate 3 which are sequentially pressed from top to bottom, wherein a first microstrip line 11 and a second microstrip line 12 which are different in width are sequentially arranged on the upper surface of the upper dielectric plate 1 along the length direction of the upper dielectric plate 1, and the first microstrip line 11 and the second microstrip line 12 are connected end to end through a transition structure 13; a first ground layer 21 with the same length as the first microstrip line 11 is printed at the position, opposite to the first microstrip line 11, of the upper surface of the spaced dielectric slab 2, a first sawtooth structure 22 is arranged at the edge, facing the direction of the second microstrip line 12, of the first ground layer 21, a second ground layer 31 with the same length as the second microstrip line 12 is printed at the position, opposite to the second microstrip line 12, of the upper surface of the lower dielectric slab 3, and a second sawtooth structure 32 is arranged at the edge, facing the direction of the first microstrip line 11, of the second ground layer 31; alternatively, a first ground layer 21 having the same length as the second microstrip line 12 is printed at a position opposite to the second microstrip line 12 on the upper surface of the spaced dielectric slab 2, a first sawtooth structure 22 is disposed on an edge of the first ground layer 21 facing the direction of the first microstrip line 11, a second ground layer 31 having the same length as the first microstrip line 11 is printed at a position opposite to the first microstrip line 11 on the upper surface of the lower dielectric slab 3, and a second sawtooth structure 32 is disposed on an edge of the second ground layer 31 facing the direction of the second microstrip line 12.

In this embodiment, the first microstrip line 11 and the second microstrip line 12 respectively extend towards the middle along two opposite sides of the upper dielectric slab 1, so that the edge lines of the first microstrip line 11 and the second microstrip line 12 close to the edge of the upper dielectric slab 1 coincide with the corresponding edge lines of the upper dielectric slab 1; that is, the first microstrip line 11 extends rightward along the left edge of the upper-layer dielectric board 1, and the second microstrip line 12 extends leftward along the right edge of the upper-layer dielectric board 1.

In some embodiments, it can also be defined that the first microstrip line 11 extends leftwards along the right edge of the upper dielectric slab 1, and the second microstrip line 12 extends rightwards along the left edge of the upper dielectric slab 1, and the naming of the first microstrip line 11 and the second microstrip line 12 is only limited for convenience of explanation of the technical solution.

In the present embodiment, since the impedances of the first microstrip line 11 and the second microstrip line 12 are matched, when the width of the first microstrip line 11 is greater than the width of the second microstrip line 12, the first ground layer 21 is located at a position of the spaced dielectric slab 2 opposite to the second microstrip line 12, the first saw-tooth structure 22 is disposed along an edge of the first ground layer 21 facing the direction of the first microstrip line 11, the second ground layer 31 is located at a position of the lower dielectric slab 3 opposite to the first microstrip line 11, and the second saw-tooth structure 32 is disposed along an edge of the second ground layer 31 facing the direction of the second microstrip line 12, meanwhile, the lengths of the first ground layer 21 and the second microstrip line 12 are the same, and the length of the second ground layer 31 and the first microstrip line 11 are the same; that is, a first ground layer 21 having the same length as the second microstrip line 12 is printed at a position facing the second microstrip line 12 on the upper surface of the dielectric spacer 2, a first saw-tooth structure 22 is provided on the edge of the first ground layer 21 facing the direction of the first microstrip line 11, a second ground layer 31 having the same length as the first microstrip line 11 is printed at a position facing the first microstrip line 11 on the upper surface of the lower dielectric plate 3, and a second saw-tooth structure 32 is provided on the edge of the second ground layer 31 facing the direction of the second microstrip line 12.

At this time, the first ground layer 21 extends leftward along the right edge of the upper surface of the spaced dielectric slab 2, and has the same length as the second microstrip line 12, that is, the left edge of the first ground layer 21 coincides with the left edge of the second microstrip line 12, the first saw-tooth structure 22 is located at the left edge of the first ground layer 21, the second ground layer 31 extends rightward along the left edge of the upper surface of the lower dielectric slab 3, and has the same length as the first microstrip line 11, that is, the right edge of the second ground layer 32 coincides with the right edge of the first microstrip line 11, and the second saw-tooth structure 32 is located at the right edge of the second ground layer 32.

When the width of the first microstrip line 11 is smaller than that of the second microstrip line 12, the first ground layer 21 is located at a position of the spaced dielectric slab 2 opposite to the first microstrip line 11, and the first sawtooth structure 22 is arranged along the edge of the first ground layer 21 facing the direction of the second microstrip line 12; the second ground layer 31 is located at a position of the lower dielectric slab 3 opposite to the second microstrip line 12, and the second sawtooth structure 32 is arranged along an edge of the second ground layer 31 facing the direction of the first microstrip line 11, where the first ground layer 21 has the same length as the first microstrip line 11, and the second ground layer 31 has the same length as the second microstrip line 12; that is, a first ground layer 21 having the same length as the first microstrip line 11 is printed at a position where the upper surface of the dielectric spacer 2 faces the first microstrip line 11, a first saw-tooth structure 22 is provided at an edge of the first ground layer 21 facing the direction of the second microstrip line 12, a second ground layer 31 having the same length as the second microstrip line 12 is printed at a position where the upper surface of the lower dielectric plate 3 faces the second microstrip line 12, and a second saw-tooth structure 32 is provided at an edge of the second ground layer 31 facing the direction of the first microstrip line 11.

At this time, the first ground layer 21 extends rightward along the left edge of the upper surface of the spaced dielectric slab 2, and has the same length as the first microstrip line 11, that is, the right edge of the first ground layer 21 coincides with the right edge of the first microstrip line 11, the first saw-tooth structure 22 is located at the right edge of the first ground layer 21, the second ground layer 31 extends leftward along the right edge of the upper surface of the lower dielectric slab 3, and has the same length as the second microstrip line 12, that is, the left edge of the second ground layer 32 coincides with the left edge of the second microstrip line 12, and the second saw-tooth structure 32 is located at the left edge of the second ground layer 32.

In this embodiment, the first sawtooth structures 22 and the second sawtooth structures 32 are multiple, and the bottom edges of the multiple first sawtooth structures 22 are connected end to end and are arranged periodically along the edge of the first stratum 21; the bottom edges of the second sawtooth structures 32 are connected end to end and are arranged periodically along the edge of the second ground layer 31, and the first sawtooth structures 22 and the second sawtooth structures 32 which are arranged periodically effectively reduce the diffusion of electromagnetic waves in the ground layer and inhibit the electromagnetic leakage in a 77-81GHz frequency band, so that the transmission performance of the conversion structure is improved.

As a preferred embodiment, the first sawtooth structure 22 and the second sawtooth structure 32 are identical in structure; the first sawtooth structure 22 is in the form of an equilateral triangle, and the first sawtooth structure 22 has a side length of about 1/4 wavelengths.

In the present embodiment, since the impedances of the first microstrip line 11 and the second microstrip line 12 are matched, the widths of the first microstrip line 11 and the second microstrip line 12 are necessarily different, the position of the first ground layer 21 on the spaced dielectric slab 2 corresponds to the first microstrip line 11 or the second microstrip line 12 with the narrower width, and the length is the same as that of the first microstrip line 11 or the second microstrip line 12 with the narrower width, and the tip portion of the first sawtooth structure 22 is arranged facing the direction of the first microstrip line 11 or the second microstrip line 12 with the wider width; the second ground layer 31 on the lower dielectric plate 3 is disposed at a position corresponding to the first microstrip line 11 or the second microstrip line 12 with a wider width, and has the same length as the first microstrip line 11 or the second microstrip line 12 with a wider width, and the tip of the second saw-tooth structure 32 is disposed facing the first microstrip line 11 or the second microstrip line 12 with a narrower width.

In the present embodiment, the center lines of the first microstrip line 11 and the second microstrip line 12 are overlapped, and since the widths of the first microstrip line 11 and the second microstrip line 12 are different, the transition structure 13 is in an isosceles trapezoid shape, and the length range of the transition structure 13 is 0.5-1mm, that is, the height of the transition structure 13 is in the range of 0.5-1mm, that is, the distance range between the first microstrip line 11 and the second microstrip line 12 is 0.5-1 mm.

Meanwhile, in the present embodiment, the lengths of the first microstrip line 11 and the second microstrip line 12 are not specifically limited, and the lengths of the first microstrip line 11 and the second microstrip line 12 may be the same or different, and in the present embodiment, the lengths of the first microstrip line 11 and the second microstrip line 12 are the same.

In the present embodiment, the first microstrip line 11 and the second microstrip line 12 with different widths are connected end to end through the transition structure 13, and at the same time, the first ground layer 21 with the same length as the first microstrip line 11 or the second microstrip line 12 with the narrower width is disposed at the position opposite to the spacing dielectric plate 2, and the first sawtooth structure 22 is disposed at the edge of the first ground layer 21, and the second ground layer 31 with the same length as the first microstrip line 11 or the second microstrip line 12 with the wider width is disposed at the position opposite to the lower dielectric plate 3, and the second sawtooth structure 32 is disposed at the edge of the second ground layer 31, so as to effectively reduce the diffusion of electromagnetic waves in the ground layer, suppress electromagnetic leakage in the 77-81GHz band, and thereby improve the transmission performance of the transition structure, such as the electric field diagram of the microstrip transition structure between different layers of 79GHz shown in fig. 2-3, before the first sawtooth structure 22 and the second sawtooth structure 32 are respectively arranged on the edges of the first ground layer 21 and the second ground layer 31, obvious electromagnetic leakage occurs on the edges of the first ground layer 21 and the second ground layer 31 according to the microstrip transition structure electric field diagram of fig. 2, and after the first sawtooth structure 22 and the second sawtooth structure 32 are respectively arranged on the edges of the first ground layer 21 and the second ground layer 31, obvious electromagnetic leakage does not occur on the edges of the first ground layer 21 and the second ground layer 31 according to the microstrip transition structure electric field diagram of fig. 3.

Similarly, before the first sawtooth structure 22 and the second sawtooth structure 32 are respectively arranged on the edges of the first stratum 21 and the second stratum 31, as shown in the reflection coefficient and transmission coefficient simulation diagram of the microstrip conversion structure shown in fig. 4-5, due to the existence of electromagnetic leakage, the reflection coefficient is obviously raised around 82GHz, the requirement of < -10dB cannot be met, and the transmission coefficient reaches-3 dB at 82 GHz; after the first sawtooth structure 22 and the second sawtooth structure 32 are respectively arranged on the edges of the first ground layer 21 and the second ground layer 31, as shown in the reflection coefficient and transmission coefficient simulation diagrams of the microstrip conversion structure shown in fig. 6-7, because no obvious electromagnetic leakage occurs on the edges of the first ground layer 21 and the second ground layer 31, the reflection coefficient meets < -15dB in the whole bandwidth, and the transmission coefficients are all in the range of > -1 dB.

It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not limitations to the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. The microstrip transition structure is characterized by comprising an upper dielectric slab (1), an interval dielectric slab (2) and a lower dielectric slab (3) which are sequentially laminated from top to bottom, wherein a first microstrip line (11) and a second microstrip line (12) with different widths are sequentially arranged on the upper surface of the upper dielectric slab (1) along the length direction of the upper dielectric slab (1), and the first microstrip line (11) and the second microstrip line (12) are connected end to end through a transition structure (13); the upper surface of the interval medium plate (2) is printed with a first stratum (21), the edge of the first stratum (21) is provided with a first sawtooth structure (22), the upper surface of the lower medium plate (3) is printed with a second stratum (31), and the edge of the second stratum (31) is provided with a second sawtooth structure (32).

2. The microstrip transition structure applied to a 77GHz automobile radar according to claim 1, wherein the width of the first microstrip line (11) is greater than that of the second microstrip line (12), the first ground layer (21) is located at a position opposite to the second microstrip line (12) of the spacer dielectric slab (2), and the first sawtooth structure (22) is arranged along an edge of the first ground layer (21) facing the direction of the first microstrip line (11); the second ground layer (31) is located at a position, opposite to the first microstrip line (11), of the lower-layer dielectric slab (3), and the second sawtooth structure (32) is arranged along the edge, facing the direction of the second microstrip line (12), of the second ground layer (31).

3. The microstrip transition structure applied to a 77GHz automobile radar according to claim 2, wherein the first ground layer (21) and the second microstrip line (12) have the same length, and the second ground layer (31) and the first microstrip line (11) have the same length.

4. The microstrip transition structure applied to a 77GHz automobile radar according to claim 1, wherein the width of the first microstrip line (11) is smaller than that of the second microstrip line (12), the first ground layer (21) is located at a position opposite to the first microstrip line (11) of the spacing dielectric slab (2), and the first sawtooth structure (22) is arranged along an edge of the first ground layer (21) facing the direction of the second microstrip line (12); the second ground layer (31) is located at a position, opposite to the second microstrip line (12), of the lower-layer dielectric slab (3), and the second sawtooth structure (32) is arranged along the edge, facing the direction of the first microstrip line (11), of the second ground layer (31).

5. The microstrip transition structure applied to a 77GHz automobile radar according to claim 4, characterized in that the first ground layer (21) and the first microstrip line (11) have the same length, and the second ground layer (31) and the second microstrip line (12) have the same length.

6. The microstrip transition structure applied to a 77GHz automobile radar according to claim 1, characterized in that the central lines of the first microstrip line (11) and the second microstrip line (12) are coincident; the lengths of the first microstrip line (11) and the second microstrip line (12) are the same or different; the impedance of the first microstrip line (11) is matched with that of the second microstrip line (12).

7. The microstrip transition structure applied to a 77GHz automotive radar according to claim 1, characterized in that the length of the transition structure (13) ranges from 0.5 mm to 1 mm.

8. The microstrip transition structure applied to a 77GHz automobile radar is characterized in that the first sawtooth structure (22) and the second sawtooth structure (32) are a plurality of structures, and the bottom edges of the first sawtooth structures (22) are connected end to end and are arranged periodically along the edge of the first stratum (21); the bottom edges of the second sawtooth structures (32) are connected end to end and are arranged periodically along the edge of the second ground layer (31).

9. The microstrip transition structure applied to a 77GHz automobile radar according to claim 1, characterized in that the first sawtooth structure (22) and the second sawtooth structure (32) are identical in structure.

10. The microstrip transition structure applied to a 77GHz automobile radar is characterized in that the first sawtooth structure (22) is in an equilateral triangle shape, and the side length of the first sawtooth structure (22) is 1/4 wavelengths.

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