CN214315072U - MOSFET high-frequency full-bridge inversion unit - Google Patents
MOSFET high-frequency full-bridge inversion unit Download PDFInfo
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- CN214315072U CN214315072U CN202120523077.2U CN202120523077U CN214315072U CN 214315072 U CN214315072 U CN 214315072U CN 202120523077 U CN202120523077 U CN 202120523077U CN 214315072 U CN214315072 U CN 214315072U
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Abstract
本实用新型公开了一种MOSFET高频全桥逆变单元，所述全桥逆变单元包括：滤波电容、PCB板、H桥全桥并联谐振结构、两个散热器、第一层叠铜排、第二层叠铜排、上绝缘板、下绝缘板、两条直流母线输入铜板和两条交流输出铜板，本实用新型的MOSFET高频全桥逆变单元采用长方形封装结构，将散热器设置在长方形封装结构内侧，并将H桥全桥并联谐振结构的MOSFET管和阻容吸收组件设置在散热器的两侧(分别设置在位于散热器外侧的层叠铜排上和位于散热器内侧的PCB板上)，避免了因为滤波电容过大造成散热器表面不平整的技术缺陷，提高了MOSFET管与散热器表面接触的稳定性，且使结构更加紧凑，提高了阻容吸收性能。
The utility model discloses a MOSFET high-frequency full-bridge inverter unit. The full-bridge inverter unit comprises: a filter capacitor, a PCB board, an H-bridge full-bridge parallel resonance structure, two radiators, a first laminated copper bar, a second Laminated copper bars, upper insulating plates, lower insulating plates, two DC bus input copper plates and two AC output copper plates, the MOSFET high-frequency full-bridge inverter unit of the present invention adopts a rectangular packaging structure, and the radiator is arranged inside the rectangular packaging structure, The MOSFET tube and the resistance-capacitance absorption components of the H-bridge full-bridge parallel resonance structure are arranged on both sides of the radiator (respectively on the laminated copper bar located outside the radiator and the PCB board located on the inner side of the radiator), avoiding the need for Due to the technical defect that the surface of the radiator is uneven due to the excessive filter capacitor, the stability of the contact between the MOSFET tube and the surface of the radiator is improved, the structure is more compact, and the resistance-capacitance absorption performance is improved.
Description
Technical Field
The utility model relates to a power electronic technology field especially relates to a MOSFET high frequency full-bridge contravariant unit.
Background
The high-frequency induction heating equipment is a heating mode widely adopted in the technical processes of metal smelting, metal welding, hot forming, heat treatment and the like, and is mainly used for the heating processes of semiconductor single crystal growth, metal straight seam pipe welding, non-ferrous metal smelting, brazing of various metal products and the like. An important component of the high-frequency induction heating device is a power unit composed of MOSFET power devices, which directly affects the electrical performance of the high-frequency induction heating device, thereby affecting the operational safety, reliability and working efficiency of the high-frequency induction heating device. In practical production, a high-frequency inverter power unit composed of MOSFET power devices occupies an important component in most high-frequency induction heating devices, and realizes transmission and conversion of electric energy.
In the current market, a parallel power unit based on a power device MOSFET generally comprises main parts such as a water cooling plate, a driving plate, a resistance-capacitance absorption capacitor, a filter absorption capacitor, a bus bar and the like. Generally, a power device MOSFET and a resistance-capacitance absorption device are fixed on one side of a water-cooling plate with a light and thin copper plate, and a copper pipe is welded on the other side of the water-cooling plate, and the water-cooling plate mainly serves as a cooling medium; the positive and negative electrode plates of the power supply are connected with the filter capacitor. The structure can cause uneven structure surface of the water cooling plate, further cause instability of contact between the MOSFET of the power device and the surface of the MOSFET, and cause burning of the MOSFET device with serious consequences to generate large economic loss; because the resistor-capacitor absorption and the MOSFET fixed on the same side cause the volume of the water cooling plate to be overlarge, the resistor-capacitor absorption can not exert better performance.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a MOSFET high frequency full-bridge contravariant unit to improve MOSFET high frequency full-bridge contravariant unit's resistance-capacitance absorption performance and heat dissipation stability ability.
In order to achieve the above object, the utility model provides a following scheme:
the utility model provides a MOSFET high frequency full-bridge contravariant unit, full-bridge contravariant unit includes: the device comprises a filter capacitor, a PCB (printed circuit board), an H-bridge full-bridge parallel resonance structure, two radiators, a first laminated copper bar, a second laminated copper bar, an upper insulating plate, a lower insulating plate, two direct current bus input copper plates and two alternating current output copper plates;
the adjacent side edges of the upper insulating plate, the first laminated copper bar, the lower insulating plate and the second laminated copper bar are sequentially connected to form a rectangular packaging structure;
the two direct-current bus input copper plates are arranged on the lower surface of the upper insulating plate, and the two alternating-current output copper plates are respectively arranged on the upper surface and the lower surface of the lower insulating plate;
the two radiators are respectively arranged on the back surfaces of the first laminated copper bar and the second laminated copper bar;
the PCB is fixed between the two radiators;
MOSFET tubes of the H-bridge full-bridge parallel resonance structure are uniformly distributed on the first laminated copper bar and the second laminated copper bar; the absorption resistor, the absorption capacitor and the filter capacitor of the H-bridge full-bridge parallel resonance structure are arranged on the PCB, the direct-current input end of the H-bridge full-bridge parallel resonance structure is connected with the two direct-current bus input copper plates through the first laminated copper bar and the second laminated copper bar, and the alternating-current output end of the H-bridge full-bridge parallel resonance structure is connected with the two alternating-current output copper plates through the first laminated copper bar and the second laminated copper bar; the filter capacitor is connected in series with the direct current bus.
Optionally, the H-bridge full-bridge parallel resonance structure includes four bridge arm unit groups, and the four bridge arm unit groups are connected to form a full-bridge circuit.
Optionally, the bridge arm unit group includes a plurality of bridge arm units connected in parallel.
Optionally, the bridge arm unit includes a MOSFET tube, a fast recovery diode, an absorption resistor, and an absorption capacitor;
the fast recovery diode is connected with the MOSFET in series to form a bridge arm structure;
and the absorption resistor and the absorption capacitor are connected in series and then are connected in parallel with the bridge arm structure.
Optionally, the full-bridge inverter unit further includes a temperature protection switch, and the temperature protection switch is disposed on the heat sink and connected in series to each bridge arm unit of the full-bridge circuit.
Optionally, the radiator includes water-cooling aluminum plate and cooling water course, the cooling water course is in water-cooling aluminum plate upper run snakelike distributes, the cooling water course is the copper pipe.
Optionally, the full-bridge inverter unit further includes two fixing plates;
the two fixing plates are respectively fixed on two end faces of the two radiators; and two ends of the PCB are respectively connected with the two fixing plates.
Optionally, the driving circuit board of the H-bridge full-bridge parallel resonance structure is erected on the upper surface of the upper insulating plate.
Optionally, both ends of the dc bus input copper plate and the ac output copper plate are provided with cable mounting holes and cable mounting bolts.
According to the utility model provides a concrete embodiment, the utility model discloses a following technological effect:
the utility model discloses a MOSFET high frequency full-bridge contravariant unit, full-bridge contravariant unit includes: filter capacitor, the PCB board, H bridge full-bridge parallel resonance structure, two radiators, first lamination copper bar, the range upon range of copper bar of second, go up the insulation board, lower insulation board, two direct current generating line input copper and two exchange output copper, the utility model discloses a MOSFET high frequency full-bridge contravariant unit adopts rectangle packaging structure, is inboard at rectangle packaging structure with the radiator setting, and with the MOSFET pipe and the resistance-capacitance absorption subassembly setting of H bridge full-bridge parallel resonance structure in the both sides of radiator (set up respectively on the range upon range of copper bar that is located the radiator outside and be located the inboard PCB board of radiator), avoided because filter capacitor excessively causes the technical defect of radiator surface unevenness, improved MOSFET pipe and radiator surface contact's stability, and made the structure compacter, improved resistance-capacitance absorption performance.
The utility model discloses a connected mode of range upon range of copper bar has reduced the stray inductance in the output circuit, has improved parallel resonance high frequency circuit's stability.
The utility model discloses utilize the symmetric distribution that direct current inlet wire and interchange were qualified for the next round of competitions, improved H bridge full-bridge parallel resonance structure's homodromic nature.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic structural diagram of a MOSFET high-frequency full-bridge inverter unit according to the present invention;
fig. 2 is the structural schematic diagram of the H-bridge full-bridge parallel resonance structure in which the bridge arm unit group includes 1 bridge arm unit.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The utility model aims at providing a MOSFET high frequency full-bridge contravariant unit to improve MOSFET high frequency full-bridge contravariant unit's resistance-capacitance absorption performance and heat dissipation stability ability.
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
As shown in fig. 1, the utility model provides a MOSFET high frequency full-bridge inverter unit, full-bridge inverter unit includes: the structure comprises a filter capacitor (not shown in figure 1), a PCB (printed circuit board) 1, an H-bridge full-bridge parallel resonance structure (not shown in figure 1), two radiators 2, a first laminated copper bar 3, a second laminated copper bar (not shown in figure 1), an upper insulating plate 4, a lower insulating plate 5, two direct current bus input copper plates 6 and two alternating current output copper plates (not shown in figure 1); the adjacent side edges of the upper insulating plate 4, the first laminated copper bar 3, the lower insulating plate 5 and the second laminated copper bar are sequentially connected to form a rectangular packaging structure; the two direct-current bus input copper plates 6 are arranged on the lower surface of the upper insulating plate 4, and the two alternating-current output copper plates are respectively arranged on the upper surface and the lower surface of the lower insulating plate 5; the two radiators 2 are respectively arranged on the back surfaces of the first laminated copper bar 3 and the second laminated copper bar; the PCB board 1 is fixed between the two radiators 2; MOSFET tubes of the H-bridge full-bridge parallel resonance structure are uniformly distributed on the first laminated copper bar 3 and the second laminated copper bar; the absorption resistor, the absorption capacitor and the filter capacitor of the H-bridge full-bridge parallel resonance structure are arranged on the PCB 1, the direct-current input end of the H-bridge full-bridge parallel resonance structure is connected with the two direct-current bus input copper plates through the first laminated copper bar and the second laminated copper bar, and the alternating-current output end of the H-bridge full-bridge parallel resonance structure is connected with the two alternating-current output copper plates through the first laminated copper bar and the second laminated copper bar; the filter capacitor is connected in series with the direct current bus.
The H-bridge full-bridge parallel resonance structure comprises four bridge arm unit groups, and the four bridge arm unit groups are connected with each other to form a full-bridge circuit. The bridge arm unit group comprises a plurality of bridge arm units connected in parallel. Each bridge arm unit group adopts 16 MOSFETs connected in parallel, the total power is 100kW, and the working frequency is up to 500 kHz; the output adopts laminated copper bars; and a separate 4-way high frequency drive circuit is used.
The bridge arm unit group comprises a structure of an H-bridge full-bridge parallel resonance structure of 1 bridge arm unit, as shown in fig. 2, the bridge arm unit comprises a MOSFET tube 8, a fast recovery diode 9, an absorption resistor 10 and an absorption capacitor 11; the fast recovery diode 9 is connected with the MOSFET tube 8 in series to form a bridge arm structure; the absorption resistor 10 and the absorption capacitor 11 are connected in series and then connected in parallel with the bridge arm structure. The utility model discloses a high-pressure MOSFET (IXFN38N100Q2) series connection fast recovery diode (IXDI2 61) constitutes reverse resistance type power device, and every power device and independent resistance-capacitance absorption circuit (10 ohm, 222 high frequency noninductive absorption capacitance) are installed for self-induction electromotive force that inductive load produced when absorption and consumption circuit disconnection can prevent to burn out the switch contact.
The full-bridge inverter unit further comprises two fixing plates 7; the two fixing plates 7 are respectively fixed on two end faces of the two radiators; and two ends of the PCB are respectively connected with the two fixing plates.
The radiator comprises a water-cooling aluminum plate and a cooling water channel, wherein the cooling water channel is distributed in a snake shape on the upper pass of the water-cooling aluminum plate, and the cooling water channel is a copper pipe. One side of the water-cooling tube is positioned in the water-cooling plate, and the other side of the water-cooling tube is positioned on the side of the laminated copper bar.
Namely, the utility model discloses a copper pipe radiator is inlayed for water-cooling aluminum plate to the radiator, installs temperature protection switch simultaneously, and it links to each other with fast recovery diode and electric capacity for cut off or switch-on circuit plays the effect of thermal protection.
As a preferred embodiment but not limited to this embodiment, the full-bridge inverter unit further includes a temperature protection switch disposed on the heat sink and connected in series in each of the bridge arm units of the full-bridge circuit.
And the driving circuit board of the H-bridge full-bridge parallel resonance structure is erected on the upper surface of the upper insulating plate. And cable mounting holes and cable mounting bolts are arranged at two ends of the direct-current bus input copper plate and the alternating-current output copper plate. The drive circuit board adopts an independent 4-path high-frequency drive circuit.
According to the utility model provides a concrete embodiment, the utility model discloses a following technological effect:
the utility model discloses a MOSFET high frequency full-bridge contravariant unit, full-bridge contravariant unit includes: filter capacitor, PCB board, H bridge full-bridge parallel resonance structure, two radiators, first layer stack copper bar, the range upon range of copper bar of second, go up insulation board, lower insulation board, two direct current generating line input copper and two exchange output copper, the utility model discloses a power device MOSFET connects in one side of water-cooling board, and resistance-capacitance capacitor sets up the opposite side at the water-cooling board. The water cooling plate has greatly reduced volume, compact structure and small occupied space, and is suitable for high-power induction heating power supply. The PCB is arranged between the positive plate and the negative plate of the power supply, meanwhile, the filter capacitor is fixed on the PCB, the PCB is fixed between the two water-cooling plates, and on the alternating current side, the adopted connection method is a laminated busbar, so that stray inductance in an output loop is reduced powerfully, and the PCB plays a vital role in improving the stability of a parallel resonance high-frequency circuit. By means of the symmetrical distribution of the direct current incoming line and the alternating current outgoing line, the current sharing performance of the parallel device is improved, and the current sharing performance of the device is fully exerted.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principle and the implementation of the present invention are explained herein by using specific examples, and the above description of the embodiments is only used to help understand the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present specification should not be construed as a limitation of the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120523077.2U CN214315072U (en) | 2021-03-12 | 2021-03-12 | MOSFET high-frequency full-bridge inversion unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120523077.2U CN214315072U (en) | 2021-03-12 | 2021-03-12 | MOSFET high-frequency full-bridge inversion unit |
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| Publication Number | Publication Date |
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| CN214315072U true CN214315072U (en) | 2021-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120523077.2U Withdrawn - After Issue CN214315072U (en) | 2021-03-12 | 2021-03-12 | MOSFET high-frequency full-bridge inversion unit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112865557A (en) * | 2021-03-12 | 2021-05-28 | 华北电力大学（保定） | MOSFET high-frequency full-bridge inversion unit |
| CN114024438A (en) * | 2021-11-11 | 2022-02-08 | 宁波奥克斯电气股份有限公司 | Discrete circuit and air conditioner for reducing EMI radiation interference of inverter circuit |
-
2021
- 2021-03-12 CN CN202120523077.2U patent/CN214315072U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112865557A (en) * | 2021-03-12 | 2021-05-28 | 华北电力大学（保定） | MOSFET high-frequency full-bridge inversion unit |
| CN112865557B (en) * | 2021-03-12 | 2024-06-04 | 华北电力大学（保定） | MOSFET high-frequency full-bridge inversion unit |
| CN114024438A (en) * | 2021-11-11 | 2022-02-08 | 宁波奥克斯电气股份有限公司 | Discrete circuit and air conditioner for reducing EMI radiation interference of inverter circuit |
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Granted publication date: 20210928 Effective date of abandoning: 20240604 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20210928 Effective date of abandoning: 20240604 |