CN213937863U - Synchronous driving circuit of array type silicon controlled high-voltage large-current pulse switch - Google Patents
Synchronous driving circuit of array type silicon controlled high-voltage large-current pulse switch Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 66
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- 230000010412 perfusion Effects 0.000 claims description 23
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- 230000001360 synchronised effect Effects 0.000 claims description 14
- 230000003321 amplification Effects 0.000 claims description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 12
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- 150000004706 metal oxides Chemical class 0.000 description 5
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- 238000005516 engineering process Methods 0.000 description 3
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Abstract
The utility model discloses a synchronous drive circuit of array silicon controlled rectifier high voltage heavy current pulse switch, its technical scheme main points are: the device comprises a driving module and an array switch, wherein the driving module comprises a pulse signal differentiating circuit, a pulse signal amplifying circuit, a perfusion driving circuit, a high-current pulse current generating circuit and a DC-DC booster circuit, the array switch comprises an electromagnetic coupling driver, a silicon controlled array and a voltage equalizing circuit, the pulse signal amplifying circuit is electrically connected with the perfusion driving circuit, the filling driving circuit is electrically connected with the high-current pulse current, the high-current pulse current is electrically connected with the electromagnetic coupling driver, and the electromagnetic coupling driver is electrically connected with the silicon controlled array; the device can be used for isolating each group, the number of the coupling magnetic rings can be reduced, the driving adopts a full-isolation scheme, the TTL level power supply is adopted, the driving response speed is high, the modular design is realized, and the requirements of different numbers of array switches are met.
Description
Technical Field
The utility model relates to a drive circuit field, in particular to array silicon controlled rectifier high voltage heavy current pulse switch's synchronous drive circuit.
Background
At present, the mainstream high-voltage large-current pulse uses a gas switch or a high-power silicon controlled rectifier component. The gas switch has large discharge sound and large switch jitter, and a desired waveform is difficult to obtain; the high-power silicon controlled rectifier generally adopts a disc type structure, adopts a crimping series connection mode, considers the insulation and voltage resistance of a crimping structure, has large volume, is not beneficial to small modularization, cannot be installed in a small instrument, and can increase the waveform rise time due to the increase of switch inductance caused by the crimping volume.
Referring to the chinese patent with the prior publication number CN107733414A, it discloses a serial thyristor driving circuit, comprising: the three input ports, a change-over switch connected in series with one of the input ports, an integrator connected between the other two input ports, a transformer connected in parallel with the output port, a magnetic ring connected in parallel with the transformer, an RC low-pass filter connected in series with the magnetic ring and connected with the second port of the thyristor, and a current stabilizing controller connected in series with the fifth port of the integrator and connected with the second port of the thyristor; the fourth port of the integrator is connected with the first port of the controllable silicon; the second port of the magnetic ring of the former driving circuit is connected with the first port of the magnetic ring of the latter driving circuit; the first port of the magnetic ring of the first drive circuit is connected with the fourth port of the integrating circuit, and the second port of the magnetic ring of the last drive circuit is connected with the third port of the transformer.
The series silicon controlled rectifier driving circuit has the advantages of high synchronous trigger signals, high initial amplitude of output current, stable continuous current and the like. However, the above-mentioned serial scr driving circuit still has some disadvantages, such as: firstly, the switch in the existing scheme has large volume; secondly, the existing scheme driving is generally direct driving or transformer isolation, generally only can be used for low-voltage electrical appliances, and for voltages larger than 10kV, an isolation transformer is large in size and cannot be applied to miniaturized instruments.
SUMMERY OF THE UTILITY MODEL
To the problem mentioned in the background art, the utility model aims at providing a synchronous drive circuit of array silicon controlled rectifier high voltage heavy current pulse switch to solve the problem mentioned in the background art.
The above technical purpose of the present invention can be achieved by the following technical solutions:
the synchronous driving circuit comprises a driving module and an array switch, wherein the driving module comprises a pulse signal differentiating circuit, a pulse signal amplifying circuit, a perfusion driving circuit, a high-current pulse current generating circuit and a DC-DC booster circuit, the array switch comprises an electromagnetic coupling driver, a silicon controlled array and a voltage-sharing circuit, the pulse signal amplifying circuit is electrically connected with the perfusion driving circuit, the perfusion driving circuit is electrically connected with the high-current pulse current, the high-current pulse current is electrically connected with the electromagnetic coupling driver, and the electromagnetic coupling driver is electrically connected with the silicon controlled array.
By adopting the technical scheme, the driving module is powered by 5V, but is not limited to 5V, and the driving signal is 5V level, but is not limited to 5V. The drive circuit realizes rapid rise through two-stage amplification to realize large-current pulse output, can simultaneously drive hundreds of controllable silicon devices to synchronously act, adopts an electromagnetic isolation technology, and solves the problem that a single device resists voltage during high-voltage high-power discharge. The whole silicon controlled control circuit comprises: the system comprises a 2-path power supply, a 2-stage signal amplification and an electromagnetic coupling driving part.
The 2 paths of power supplies are distributed into a first DC-DC booster circuit and a second DC-DC booster circuit, the first DC-DC booster circuit boosts a 5V power supply into direct current of 10-30V, and the purpose is to supply power to pulse discharge current, so that a small current signal of TTL is converted into a pulse signal capable of driving a perfusion circuit, and conversion from small energy to large energy is realized. The second DC-DC booster circuit boosts the external power supply of 5V to the maximum 400V (generally 30-400V is adjusted according to the number of devices), and aims to provide enough voltage and energy for the high-voltage large-current drive silicon controlled rectifier;
a first DC-DC boost circuit: the principle is to boost the 5V power supply to a higher voltage, about 10-30V, in order to power the pulse signal amplification circuit.
A second DC-DC boost circuit: the power supply of 5V is boosted to high voltage, the high voltage is about 30-400V, and the voltage is high enough to generate a large current signal to drive the electromagnetic coupler to make the silicon controlled array work. With the voltage doubling circuit, a voltage of up to several hundred volts can be generated.
A drive circuit: because the input end of the MOS tube is equivalent to a small capacitor, the input switching signal actually carries out repeated charging and discharging processes on the equivalent capacitor, in the process, the conduction and the closing of the MOS tube generate hysteresis, the power consumption is increased, and the MOS tube is burnt, so that the perfusion circuit is adopted in the design. The device comprises a pulse signal differentiating circuit, a pulse signal amplifying circuit, a perfusion driving circuit and a large-current pulse current.
A pulse signal differentiating circuit: the input level signal is converted into a pulse driven by a rising edge after interference is removed, so that the situation that the output signal is continuously conducted when the input level is conducted for a long time, the booster circuit is short-circuited and overloaded for a long time, and the drive damage is possible is avoided. After the pulse is input, the pulse is subjected to RC filtering (a resistor R15 and a capacitor C23), interference is removed through a U4A and a U4B double-phase inverter, a pure square wave signal is obtained, a group of composite MOS (metal oxide semiconductor) tubes consisting of NPN (negative-positive-negative) and PNP (positive-negative) are reversely driven through U4C, and a differential pulse signal is output through a capacitor C22.
Pulse signal gathers and differentiating circuit: the pulse amplifying circuit drives a first-stage MOSfet Q2 after input differential pulse signals are subjected to interference elimination through two inverters U4D and U4F, and a power supply is a first DC-DC booster circuit, so that the purpose of amplifying input level signals is achieved.
The perfusion driving circuit adopts a high-speed signal output by the first-stage mosfet to drive a composite MOS tube, one is a PNP type and the other is an NPN type, the base stages are connected together, when a positive half period of a square wave signal comes, the NPN type MOS is switched on, the PNP type MOS is switched off, and VCC charges a grid electrode of a following MOS through the NPN type MOS. When the negative half period of the square wave signal comes, the PNP type MOS is conducted, the NPN type MOS is cut off, and the VCC charges the grid electrode of the following MOS through the PNP type MOS.
The high-current pulse current is actually a second-stage mosfet, the power supply is a second DC-DC booster circuit, and a transient high-current signal can be generated by driving the electromagnetic coupler by using higher voltage.
An array switch: the device comprises an electromagnetic coupling driver, an array silicon controlled rectifier and a voltage-sharing circuit.
An electromagnetic coupling driver: each parallel silicon controlled rectifier group is driven by an independent magnetic ring winding, 2-5 turns of each magnetic ring are wound (matched according to a driving signal), an enameled wire is adopted for winding, one section of a secondary winding is connected with a silicon controlled rectifier driving electrode, one end of the secondary winding is connected with a cathode, a primary winding is pulse current output by a driving module, the number of general winding turns is 1-10 turns (matched according to the driving signal), and the isolation voltage is required to be larger than the highest working voltage.
Array silicon controlled switch: the structure of m x n is adopted, and as shown in the following figure, the controllable silicon adopts a series-parallel connection structure, the parallel connection aims at increasing the current flux, and the series connection aims at increasing the working voltage of the switch.
Voltage-sharing circuit, parallelly connected a set of voltage-sharing circuit, the voltage-sharing adopts high voltage direct current voltage-sharing and resistance-capacitance pulse voltage-sharing parallelly connected mode, and high resistance voltage-sharing adopts resistance to carry out the voltage-sharing, and general resistance value is the M omega rank, selects according to the use occasion of difference, and resistance-capacitance voltage-sharing aim at guarantees under the pulse state that each level switch tube voltage is balanced, avoids puncturing one by one because of the uneven switch that leads to of partial pressure.
Preferably, the DC-DC boost circuit includes a first DC-DC boost circuit and a second DC-DC boost circuit, the first DC-DC boost circuit and the second DC-DC boost circuit are electrically connected, one end of the first DC-DC boost circuit is electrically connected to a 5V power supply, the first DC-DC boost circuit is electrically connected to the pulse signal amplifier, and the second DC-DC boost circuit is electrically connected to the large-current pulse current.
By adopting the technical scheme, the first DC-DC booster circuit boosts the 5V power supply into 10-30V direct current, and aims to supply power to pulse discharge current, so that a small current signal of TTL is converted into a pulse signal capable of driving the perfusion circuit, and the conversion from small energy to large energy is realized. The second DC-DC booster circuit boosts the 5V external power supply to 400V (generally 30-400V is adjusted according to the number of devices), and aims to provide enough voltage and energy for the high-voltage large-current driving silicon controlled rectifier.
Preferably, the pulse signal differentiating circuit comprises an RC filter, a double inverter and a composite MOS transistor, the RC filter comprises a resistor R15 and a capacitor C23, the double inverter comprises U4A and U4B, and the composite MOS transistor is an NPN type or a PNP type MOS transistor.
By adopting the technical scheme, after pulse input, the pulse is subjected to RC filtering (a resistor R15 and a capacitor C23), interference is removed through a U4A and a U4B double-phase inverter to obtain a pure square wave signal, a group of composite MOS (metal oxide semiconductor) tubes consisting of NPN (negative-positive-negative) and PNP (positive-negative) are reversely driven through the U4C, and a differential pulse signal is output through the capacitor C22.
Preferably, the pulse signal amplification includes two inverters U4D and U4F and a first stage MOSfet Q2, and the power supply is a first DC-DC boost circuit.
By adopting the technical scheme, the purpose of carrying out a signal method on the input level can be achieved.
Preferably, the electromagnetic coupling driver is composed of magnetic rings and windings, each parallel silicon controlled rectifier group is driven by an independent magnetic ring winding, and the windings are wound by enameled wires.
By adopting the technical scheme, battery coupling operation can be realized, independent control and driving are realized, and the coil on the winding is protected.
Preferably, the winding comprises a secondary winding and a primary winding, one end of the secondary winding is connected with the silicon controlled rectifier driving electrode, the other end of the secondary winding is connected with the cathode, and the primary winding outputs pulse current for the driving module.
By adopting the technical scheme, the silicon controlled rectifier is driven and the pulse current is output to the driving module.
Preferably, the array silicon controlled rectifier is arranged in an m x n array, the array silicon controlled rectifier is in a series-parallel connection structure, and the voltage equalizing circuit adopts a high-voltage direct-current voltage equalizing mode and a resistance-capacitance pulse voltage equalizing parallel connection mode.
By adopting the technical scheme, the parallel connection aims at increasing the current flux, and the series connection aims at increasing the working voltage of the switch.
To sum up, the utility model discloses mainly have following beneficial effect:
firstly, a grouping isolation scheme is adopted, a group of parallel-connected silicon controlled rectifiers uses a coupling magnetic core, so that mutual isolation between each group can be ensured, meanwhile, the number of coupling magnetic rings can be reduced (compared with the scheme that each silicon controlled rectifier uses one magnetic core), and the method can be applied to high-current switches (under the condition that the number of the parallel-connected silicon controlled rectifiers in each group is large).
And secondly, the drive adopts a full-isolation scheme, and the high-voltage isolation problem can be solved only by changing the size of the coupling magnetic ring and using a high-voltage-resistant wire according to different voltage requirements.
And thirdly, TTL level power supply is adopted, the circuit can be directly applied to various control units such as a single chip microcomputer and a PLC, and the driving response speed is high and is less than 100 ns.
And fourthly, the high-voltage output can be realized by adjusting the second-stage booster circuit through the modular design, and the energy requirements of different numbers of array switches can be met.
Drawings
Fig. 1 is a schematic diagram of the system structure of the present invention;
fig. 2 is a first DC-DC boost circuit diagram of the present invention;
fig. 3 is a second DC-DC boost circuit diagram of the present invention;
fig. 4 is a circuit diagram of the pulse signal acquisition and differentiation circuit of the present invention;
fig. 5 is a high current pulse current circuit diagram of the present invention;
fig. 6 is a circuit diagram of the pulse current output circuit of the present invention;
FIG. 7 is a schematic diagram of the thyristor and electromagnetic coupling of the present invention;
fig. 8 is a current waveform diagram of the array switch output of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example 1
Referring to fig. 1-8, a synchronous driving circuit of an array thyristor high-voltage high-current pulse switch, includes a driving module and an array switch, where the driving module includes a pulse signal differentiating circuit, a pulse signal amplifying circuit, a perfusion driving circuit, a high-current pulse current generating circuit, and a DC-DC boost circuit, the array switch includes an electromagnetic coupling driver, a thyristor array, and a voltage-equalizing circuit, the pulse signal amplifying circuit is electrically connected to the perfusion driving circuit, the perfusion driving circuit is electrically connected to the high-current pulse current, the high-current pulse current is electrically connected to the electromagnetic coupling driver, and the electromagnetic coupling driver is electrically connected to the thyristor array.
By adopting the technical scheme, the driving module is powered by 5V, but is not limited to 5V, and the driving signal is 5V level, but is not limited to 5V. The drive circuit realizes rapid rise through two-stage amplification to realize large-current pulse output, can simultaneously drive hundreds of controllable silicon devices to synchronously act, adopts an electromagnetic isolation technology, and solves the problem that a single device resists voltage during high-voltage high-power discharge. The whole silicon controlled control circuit comprises: the system comprises a 2-path power supply, a 2-stage signal amplification and an electromagnetic coupling driving part.
The 2 paths of power supplies are distributed into a first DC-DC booster circuit and a second DC-DC booster circuit, the first DC-DC booster circuit boosts a 5V power supply into direct current of 10-30V, and the purpose is to supply power to pulse discharge current, so that a small current signal of TTL is converted into a pulse signal capable of driving a perfusion circuit, and conversion from small energy to large energy is realized. The second DC-DC booster circuit boosts the external power supply of 5V to the maximum 400V (generally 30-400V is adjusted according to the number of devices), and aims to provide enough voltage and energy for the high-voltage large-current drive silicon controlled rectifier;
a first DC-DC boost circuit: the principle is to boost the 5V power supply to a higher voltage, about 10-30V, in order to power the pulse signal amplification circuit.
A second DC-DC boost circuit: the power supply of 5V is boosted to high voltage, the high voltage is about 30-400V, and the voltage is high enough to generate a large current signal to drive the electromagnetic coupler to make the silicon controlled array work. With the voltage doubling circuit, a voltage of up to several hundred volts can be generated.
A drive circuit: because the input end of the MOS tube is equivalent to a small capacitor, the input switching signal actually carries out repeated charging and discharging processes on the equivalent capacitor, in the process, the conduction and the closing of the MOS tube generate hysteresis, the power consumption is increased, and the MOS tube is burnt, so that the perfusion circuit is adopted in the design. The device comprises a pulse signal differentiating circuit, a pulse signal amplifying circuit, a perfusion driving circuit and a large-current pulse current.
A pulse signal differentiating circuit: the input level signal is converted into a pulse driven by a rising edge after interference is removed, so that the situation that the output signal is continuously conducted when the input level is conducted for a long time, the booster circuit is short-circuited and overloaded for a long time, and the drive damage is possible is avoided. After the pulse is input, the pulse is subjected to RC filtering (a resistor R15 and a capacitor C23), interference is removed through a U4A and a U4B double-phase inverter, a pure square wave signal is obtained, a group of composite MOS (metal oxide semiconductor) tubes consisting of NPN (negative-positive-negative) and PNP (positive-negative) are reversely driven through U4C, and a differential pulse signal is output through a capacitor C22.
Pulse signal gathers and differentiating circuit: the pulse amplifying circuit drives a first-stage MOSfet Q2 after input differential pulse signals are subjected to interference elimination through two inverters U4D and U4F, and a power supply is a first DC-DC booster circuit, so that the purpose of amplifying input level signals is achieved.
The perfusion driving circuit adopts a high-speed signal output by the first-stage mosfet to drive a composite MOS tube, one is a PNP type and the other is an NPN type, the base stages are connected together, when a positive half period of a square wave signal comes, the NPN type MOS is switched on, the PNP type MOS is switched off, and VCC charges a grid electrode of a following MOS through the NPN type MOS. When the negative half period of the square wave signal comes, the PNP type MOS is conducted, the NPN type MOS is cut off, and the VCC charges the grid electrode of the following MOS through the PNP type MOS.
The high-current pulse current is actually a second-stage mosfet, the power supply is a second DC-DC booster circuit, and a transient high-current signal can be generated by driving the electromagnetic coupler by using higher voltage.
An array switch: the device comprises an electromagnetic coupling driver, an array silicon controlled rectifier and a voltage-sharing circuit.
An electromagnetic coupling driver: each parallel silicon controlled rectifier group is driven by an independent magnetic ring winding, 2-5 turns of each magnetic ring are wound (matched according to a driving signal), an enameled wire is adopted for winding, one section of a secondary winding is connected with a silicon controlled rectifier driving electrode, one end of the secondary winding is connected with a cathode, a primary winding is pulse current output by a driving module, the number of general winding turns is 1-10 turns (matched according to the driving signal), and the isolation voltage is required to be larger than the highest working voltage.
Array silicon controlled switch: the structure of m x n is adopted, and as shown in the following figure, the controllable silicon adopts a series-parallel connection structure, the parallel connection aims at increasing the current flux, and the series connection aims at increasing the working voltage of the switch.
Voltage-sharing circuit, parallelly connected a set of voltage-sharing circuit, the voltage-sharing adopts high voltage direct current voltage-sharing and resistance-capacitance pulse voltage-sharing parallelly connected mode, and high resistance voltage-sharing adopts resistance to carry out the voltage-sharing, and general resistance value is the M omega rank, selects according to the use occasion of difference, and resistance-capacitance voltage-sharing aim at guarantees under the pulse state that each level switch tube voltage is balanced, avoids puncturing one by one because of the uneven switch that leads to of partial pressure.
Referring to fig. 2 and 3, in order to supply power to the pulse signal amplifying circuit and achieve a voltage high enough to generate a large current signal, the pulse signal amplifying circuit is used to drive the electromagnetic coupler to operate the thyristor array; the DC-DC booster circuit comprises a first DC-DC booster circuit and a second DC-DC booster circuit, the first DC-DC booster circuit and the second DC-DC booster circuit are electrically connected, one end of the first DC-DC booster circuit is electrically connected with a 5V power supply, the first DC-DC booster circuit is electrically connected with the pulse signal amplifier, and the second DC-DC booster circuit is electrically connected with the high-current pulse current. The effect is that the first DC-DC booster circuit boosts the 5V power supply to 10-30V direct current, and aims to supply power to pulse discharge current, so that a small current signal of TTL is converted into a pulse signal capable of driving the perfusion circuit, and conversion from small energy to large energy is realized. The second DC-DC booster circuit boosts the 5V external power supply to 400V (generally 30-400V is adjusted according to the number of devices), and aims to provide enough voltage and energy for the high-voltage large-current driving silicon controlled rectifier.
Referring to fig. 4, in order to convert the input level signal after removing interference into a pulse driven by a rising edge, the purpose of avoiding driving damage due to long-time short circuit overload of the boost circuit caused by continuous conduction of the output signal when the input level is conducted for a long time is avoided; the pulse signal differential circuit comprises an RC filter, a double-phase inverter and a composite MOS tube, wherein the RC filter comprises a resistor R15 and a capacitor C23, the double-phase inverter comprises a U4A and a U4B, and the composite MOS tube adopts NPN type and PNP type MOS tubes. The effect is that after pulse input, the pulse is filtered through an RC (a resistor R15 and a capacitor C23), and is subjected to interference elimination through a U4A and U4B double-phase inverter to obtain a pure square wave signal, a group of composite MOS (metal oxide semiconductor) tubes consisting of NPN (negative-positive-negative) and PNP (positive-negative) are reversely driven through the U4C, and a differential pulse signal is output through a capacitor C22.
Referring to fig. 5, for the purpose of amplifying an input level signal; the pulse signal amplification comprises two paths of inverters U4D and U4F and a first-stage MOSfet Q2, and a power supply is a first DC-DC booster circuit. The effect is that the purpose of carrying out the signal method on the input level can be achieved.
In order to realize the purpose of driving and controlling the electromagnetic coupling driver; the electromagnetic coupling driver is composed of magnetic rings and windings, each parallel silicon controlled rectifier group is driven by an independent magnetic ring winding, and the windings are wound by enameled wires. The effect is that battery coupling operation can be realized, independent control driving is realized, and the coil on the winding is protected.
The purpose of controlling the controllable silicon and outputting pulse current is achieved; the winding comprises a secondary winding and a primary winding, one end of the secondary winding is connected with the silicon controlled rectifier driving electrode, the other end of the secondary winding is connected with the cathode, and the primary winding outputs pulse current for the driving module. The effect is, in order to realize driving the silicon controlled rectifier to for drive module output pulse current.
Referring to FIG. 7, for purposes of array control bar adjustment; the array silicon controlled rectifier is arranged in an m-n array, the array silicon controlled rectifier is in a series-parallel connection structure, and the voltage-sharing circuit is in a parallel connection mode of high-voltage direct-current voltage sharing and resistance-capacitance pulse voltage sharing. The effect is that the parallel connection aims at increasing the current flux, and the series connection aims at increasing the working voltage of the switch.
The use principle and the advantages are as follows:
the driving module is powered by 5V, but is not limited to 5V, and the driving signal is 5V level, but is not limited to 5V. The drive circuit realizes rapid rise through two-stage amplification to realize large-current pulse output, can simultaneously drive hundreds of controllable silicon devices to synchronously act, adopts an electromagnetic isolation technology, and solves the problem that a single device resists voltage during high-voltage high-power discharge. The whole silicon controlled control circuit comprises: the system comprises a 2-path power supply, a 2-stage signal amplification and an electromagnetic coupling driving part.
The 2 paths of power supplies are distributed into a first DC-DC booster circuit and a second DC-DC booster circuit, the first DC-DC booster circuit boosts a 5V power supply into direct current of 10-30V, and the purpose is to supply power to pulse discharge current, so that a small current signal of TTL is converted into a pulse signal capable of driving a perfusion circuit, and conversion from small energy to large energy is realized. The second DC-DC booster circuit boosts the external power supply of 5V to the maximum 400V (generally 30-400V is adjusted according to the number of devices), and aims to provide enough voltage and energy for the high-voltage large-current drive silicon controlled rectifier;
a first DC-DC boost circuit: the principle is to boost the 5V power supply to a higher voltage, about 10-30V, in order to power the pulse signal amplification circuit.
A second DC-DC boost circuit: the power supply of 5V is boosted to high voltage, the high voltage is about 30-400V, and the voltage is high enough to generate a large current signal to drive the electromagnetic coupler to make the silicon controlled array work. With the voltage doubling circuit, a voltage of up to several hundred volts can be generated.
A drive circuit: because the input end of the MOS tube is equivalent to a small capacitor, the input switching signal actually carries out repeated charging and discharging processes on the equivalent capacitor, in the process, the conduction and the closing of the MOS tube generate hysteresis, the power consumption is increased, and the MOS tube is burnt, so that the perfusion circuit is adopted in the design. The device comprises a pulse signal differentiating circuit, a pulse signal amplifying circuit, a perfusion driving circuit and a large-current pulse current.
A pulse signal differentiating circuit: the input level signal is converted into a pulse driven by a rising edge after interference is removed, so that the situation that the output signal is continuously conducted when the input level is conducted for a long time, the booster circuit is short-circuited and overloaded for a long time, and the drive damage is possible is avoided. After the pulse is input, the pulse is subjected to RC filtering (a resistor R15 and a capacitor C23), interference is removed through a U4A and a U4B double-phase inverter, a pure square wave signal is obtained, a group of composite MOS (metal oxide semiconductor) tubes consisting of NPN (negative-positive-negative) and PNP (positive-negative) are reversely driven through U4C, and a differential pulse signal is output through a capacitor C22.
Pulse signal gathers and differentiating circuit: the pulse amplifying circuit drives a first-stage MOSfet Q2 after input differential pulse signals are subjected to interference elimination through two inverters U4D and U4F, and a power supply is a first DC-DC booster circuit, so that the purpose of amplifying input level signals is achieved.
The perfusion driving circuit adopts a high-speed signal output by the first-stage mosfet to drive a composite MOS tube, one is a PNP type and the other is an NPN type, the base stages are connected together, when a positive half period of a square wave signal comes, the NPN type MOS is switched on, the PNP type MOS is switched off, and VCC charges a grid electrode of a following MOS through the NPN type MOS. When the negative half period of the square wave signal comes, the PNP type MOS is conducted, the NPN type MOS is cut off, and the VCC charges the grid electrode of the following MOS through the PNP type MOS.
The high-current pulse current is actually a second-stage mosfet, the power supply is a second DC-DC booster circuit, and a transient high-current signal can be generated by driving the electromagnetic coupler by using higher voltage.
An array switch: the device comprises an electromagnetic coupling driver, an array silicon controlled rectifier and a voltage-sharing circuit.
An electromagnetic coupling driver: each parallel silicon controlled rectifier group is driven by an independent magnetic ring winding, 2-5 turns of each magnetic ring are wound (matched according to a driving signal), an enameled wire is adopted for winding, one section of a secondary winding is connected with a silicon controlled rectifier driving electrode, one end of the secondary winding is connected with a cathode, a primary winding is pulse current output by a driving module, the number of general winding turns is 1-10 turns (matched according to the driving signal), and the isolation voltage is required to be larger than the highest working voltage.
Array silicon controlled switch: the structure of m x n is adopted, and as shown in the following figure, the controllable silicon adopts a series-parallel connection structure, the parallel connection aims at increasing the current flux, and the series connection aims at increasing the working voltage of the switch.
Voltage-sharing circuit, parallelly connected a set of voltage-sharing circuit, the voltage-sharing adopts high voltage direct current voltage-sharing and resistance-capacitance pulse voltage-sharing parallelly connected mode, and high resistance voltage-sharing adopts resistance to carry out the voltage-sharing, and general resistance value is the M omega rank, selects according to the use occasion of difference, and resistance-capacitance voltage-sharing aim at guarantees under the pulse state that each level switch tube voltage is balanced, avoids puncturing one by one because of the uneven switch that leads to of partial pressure.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. The utility model provides a synchronous drive circuit of array silicon controlled rectifier high voltage heavy current pulse switch, includes drive module and array switch, its characterized in that: the driving module comprises a pulse signal differentiating circuit, a pulse signal amplifying circuit, a perfusion driving circuit, a high-current pulse current generating circuit and a DC-DC booster circuit, the array switch comprises an electromagnetic coupling driver, a silicon controlled rectifier array and a voltage-sharing circuit, the pulse signal amplifying circuit is electrically connected with the perfusion driving circuit, the perfusion driving circuit is electrically connected with the high-current pulse current, the high-current pulse current is electrically connected with the electromagnetic coupling driver, and the electromagnetic coupling driver is electrically connected with the silicon controlled rectifier array.
2. The synchronous driving circuit of the array type silicon controlled high-voltage large-current pulse switch as claimed in claim 1, wherein: the DC-DC booster circuit comprises a first DC-DC booster circuit and a second DC-DC booster circuit, the first DC-DC booster circuit and the second DC-DC booster circuit are electrically connected, and one end of the first DC-DC booster circuit is electrically connected with a 5V power supply.
3. The synchronous driving circuit of the array type silicon controlled high-voltage large-current pulse switch as claimed in claim 2, wherein: the first DC-DC booster circuit is electrically connected with the pulse signal amplifier, and the second DC-DC booster circuit is electrically connected with the large-current pulse current.
4. The synchronous driving circuit of the array type silicon controlled high-voltage large-current pulse switch as claimed in claim 1, wherein: the pulse signal differential circuit comprises an RC filter, a double-phase inverter and a composite MOS tube, wherein the RC filter comprises a resistor R15 and a capacitor C23, the double-phase inverter comprises a U4A and a U4B, and the composite MOS tube adopts NPN type and PNP type MOS tubes.
5. The synchronous driving circuit of the array type silicon controlled high-voltage large-current pulse switch as claimed in claim 1, wherein: the pulse signal amplification comprises two paths of inverters U4D and U4F and a first-stage MOSfet Q2, and a power supply is a first DC-DC booster circuit.
6. The synchronous driving circuit of the array type silicon controlled high-voltage large-current pulse switch as claimed in claim 1, wherein: the electromagnetic coupling driver is composed of magnetic rings and windings, each parallel silicon controlled rectifier group is driven by an independent magnetic ring winding, and the windings are wound by enameled wires.
7. The synchronous driving circuit of the array type silicon controlled high-voltage large-current pulse switch as claimed in claim 6, wherein: the winding comprises a secondary winding and a primary winding, one end of the secondary winding is connected with the silicon controlled rectifier driving electrode, the other end of the secondary winding is connected with the cathode, and the primary winding outputs pulse current for the driving module.
8. The synchronous driving circuit of the array type silicon controlled high-voltage large-current pulse switch as claimed in claim 1, wherein: the array silicon controlled rectifier is arranged in an m-n array, the array silicon controlled rectifier is in a series-parallel connection structure, and the voltage-sharing circuit is in a parallel connection mode of high-voltage direct-current voltage sharing and resistance-capacitance pulse voltage sharing.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113630110A (en) * | 2021-08-11 | 2021-11-09 | 杭州中安电子有限公司 | Heavy current switch device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113630110A (en) * | 2021-08-11 | 2021-11-09 | 杭州中安电子有限公司 | Heavy current switch device |
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