CN2136466Y - Semiconductor pressure transducer - Google Patents
Semiconductor pressure transducer Download PDFInfo
- Publication number
- CN2136466Y CN2136466Y CN92217999U CN92217999U CN2136466Y CN 2136466 Y CN2136466 Y CN 2136466Y CN 92217999 U CN92217999 U CN 92217999U CN 92217999 U CN92217999 U CN 92217999U CN 2136466 Y CN2136466 Y CN 2136466Y
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- China
- Prior art keywords
- silicon
- groups
- sensitive element
- resistance
- pressure
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 235000014676 Phragmites communis Nutrition 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 230000035945 sensitivity Effects 0.000 claims abstract description 7
- 239000012528 membrane Substances 0.000 claims description 13
- 230000001235 sensitizing effect Effects 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 5
- 229910002796 Si–Al Inorganic materials 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 206010070834 Sensitisation Diseases 0.000 abstract 1
- 230000008313 sensitization Effects 0.000 abstract 1
- 150000003376 silicon Chemical class 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Measuring Fluid Pressure (AREA)
Abstract
The utility model discloses a semiconductor pressure transducer which comprises a transducer pipe seat, an upper cover cap nut, a sealing ring, a gasket, shielding lines, and a pressure sensitive element, wherein, the pressure sensitive element comprises an upper tabletting, a sealing piece, a protection frame, the pipe seat of the pressure sensitive element, a silicon chip, a hole sealing elastic film, and a back sticking lining, wherein, the silicon chip is provided with a sensitization groove so as to form a reed type silicon elastic film structure which is provided with four groups of silicon diffusion resistors; two groups of the four groups of silicon diffusion resistors are respectively connected with compensating resistors so as to obtain two groups of electrical bridges and to form seven output ends for two-way output. The utility model has the advantages of reliable seal, good sensitivity and linearity of the pressure sensitive element, reduced creep and hysteresis phenomena in working, high rate of finished products, and low cost.
Description
The utility model relates to a kind of device that utilizes the pressure-active element measuring fluid pressure of electricity, specifically is meant a kind of semiconductor pressure sensor.
Domestic conventional semiconductor pressure transducer, its sensitive element adopt the square elastic membrane of silicon cup formula of two-sided processing technology preparation or the integral membrane structure of round and elastic film mostly.This elastic membrane is difficult to obtain the thickness and the performance of uniformity, and yield rate is low, and the cost height is difficult to realize the seriation of product.Owing to structural reason, the pressure drag sensitivity of elastic membrane is little, and the sensitizing range all is directly to link to each other with silicon chip edge, is easy to generate creep and hysteresis phenomenon in the work.Four resistance bridges of elastic membrane generally are to disperse to place, and make that the linearity of product is relatively poor, and generally are single bridge circuit output, and the function of product and purposes are restricted.In addition, the encapsulating structure of these sensors is also not ideal enough, be subjected to the influence of environment easily at work and make stability and reliability reduce.
The purpose of this utility model, it is reliable and its sensitive element is highly sensitive and the linearity good, can reduce the semiconductor pressure sensor of creep and hysteresis phenomenon in the work greatly to provide the sealing of a kind of encapsulating structure, makes that simultaneously its yield rate height, cost reduce, function and usage extensively and easily realizes producing in serial form.
Solution of the present utility model is as follows.It has one top is hollow and the bottom has the sensor base of tracting pressuring hole, sensor base top is connected with hollow loam cake nut, a pressure-sensing device is housed in the loam cake nut, be lined with packing ring between the top of pressure-sensing device and the loam cake nut, be lined with O-ring seal between bottom and sensor base; The presser sensor original paper pastes liner by last compressing tablet, diaphragm seal, bearer bar, sensitive element base, silicon, sealing of hole elastic membrane and the back of the body successively from top to bottom and forms for these seven layers, between silicon and sealing of hole elastic membrane, directly being superimposed, mutually bonding between all the other every adjacent two layers with chemical adhesive etc., the through hole of offering at sensitive element base and bearer bar center is connected with the blind hole that the diaphragm seal center is offered, together constitute the normal pressure chamber, on back of the body subsides liner, have through hole and be connected with the center pit of O-ring seal and the tracting pressuring hole of sensor base bottom; On silicon by adopting silicon planner technology to be processed with and being trapped among the enhanced sensitivity groove that two straight troughs in the Contraband shape groove are formed by two Contraband shape grooves that separate, two Contraband shape grooves silicon in addition partly forms solid Zhi Bianyuan, and groove partly forms a reed structure with interior silicon, this reed structure supports neck by the formed reed of the isolated silicon part of two Contraband shape grooves respectively and is connected with solid Zhi Bianyuan, in the zone near four jiaos of reed structure is the sensitizing range that produces maximum stress after silicon is stressed, and is processed with silicon diffusion resistance R in four sensitizing ranges respectively
1To R
4, silicon diffusion resistance R
5To R
8, silicon diffusion resistance R
9To R
12, silicon diffusion resistance R
13To R
16These four groups of silicon diffusion resistances are taken two groups, 12 ends that are positioned at the Si-Al wire internal lead in normal pressure chamber link to each other with eight resistance respectively, the other end then respectively with the sensitive element base on 12 the metallization gold-plated in electrodes join, the gold-plated interior electrode that metallizes is connected with 12 gold-plated external electrodes of metallization at sensitive element base edge respectively again, become a brachium pontis after a resistance in every group of silicon diffusion resistance is in series with outer compensating resistance Rp of silicon and compensating resistance Rp ' respectively, again respectively with on the same group in other three resistance be linked to be bridge circuit, one end of these two groups of electric bridges is linked to be common port G, thereby two groups of electric bridges form seven output terminations that are formed by connecting after the gold-plated external electrode output of metallizing, after one seven core shielding line joins with seven terminations respectively, pass the shielding line perforation at compressing tablet side and center, pass the center drilling at packing ring and loam cake nut top more successively and stretch out outside loam cake nut top.
The utility model is when concrete the use, the force pipe of sensor base bottom and tested gas or liquid is joined, just be added to the silicon back side by the sealing of hole elastic membrane by measuring pressure, make reed-type silicon elastic membrane produce pressure, after the electric bridge of being linked to be for silicon diffusion resistance and external compensating resistance in the sensitizing range adds power supply, just there is the two-way signal voltage to export from seven core shielding lines.Through behind the test calibration, measure output voltage just the energy measurement correspondence pressure.
The utlity model has following advantage: the employing of (1) enhanced sensitivity groove, make the integral, flexible film of silicon be partitioned into reed-type elastic membrane structure, can make stress concentrate on the sensitizing range, thereby improved pressure drag sensitivity greatly, so this silicon can be used in the pressure survey of minute-pressure and low pressure range; (2) sensitizing range of reed structure does not directly link to each other with the solid Zhi Bianyuan of silicon, join with solid Zhi Bianyuan but support neck by reed at a distance, such structure can reduce peripheral fixation case to the sensitizing range stress influence, so can reduce creep and sluggishness widely; (3) every group of four silicon diffusion resistances are arranged in the sensitizing range of one square millimeter of less than, accomplish the uniformity consistency of resistance and environment thereof easily, so this design can have the good linearity; (4) four groups of silicon diffusion resistances are identical, as long as wherein two groups or one group is good, this chip just can use, so just improve yield rate widely and reduced cost, connect two groups of silicon diffusion resistances wherein, just can obtain two-way output of the present utility model, the sensor of this relatively more existing single channel output, function and purposes obviously can be expanded; (5) as long as change the thickness of this silicon, just can easily realize the seriation of sensor, and,, can produce in enormous quantities, be convenient to integrated so technology is simple owing to adopt silicon planner technology to make silicon fully; (6) on encapsulating structure, silicon is sealed in the normal pressure chamber fully, is not subjected to the influence of environment, so have stability and reliability preferably.
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is the forward cut-open view of a kind of concrete structure of the utility model;
Fig. 2 is the amplification sectional structure chart of pressure-sensing device among Fig. 1;
Fig. 3 is the structural drawing of silicon among Fig. 2;
The two-way output bridge circuit schematic diagram that Fig. 4 is linked to be with external compensating resistance for two groups of silicon diffusion resistances on the silicon among Fig. 2.
Reference numeral among the above-mentioned figure is:
1-sensor base 2-loam cake nut
3-O-ring seal 4-packing ring
5-seven core shielding line 6-pressure-sensing devices
The last compressing tablet 8-of 7-diaphragm seal
9-bearer bar 10-sensitive element base
11-silicon 12-sealing of hole elastic membrane
The 13-back of the body pastes the liner 14-gold-plated external electrode that metallizes
Electrode 16-Si-Al wire internal lead in the 15-metallization is gold-plated
17-normal pressure chamber 18-tracting pressuring hole
19-shielding line perforation 20-enhanced sensitivity groove
21-silicon diffusion resistance R1 to R4 22-silicon diffusion resistance R5 to R8
23-silicon diffusion resistance R9 to R12 24-silicon diffusion resistance R13 to R16
25-sensitizing range 26-reed supports neck
The solid Zhi Bianyuan 28-compensating resistance Rp of 27-
29-compensating resistance Rp '
Referring to Fig. 2, last compressing tablet (7), diaphragm seal (8), bearer bar (9), sensitive element base (10) and the back of the body paste liner (13) and all adopt 95 potteries.The utility model adopts electrostatic sealing-in technology and chemical adhesive method that silicon (11) is packaged into pressure-sensing device (6) earlier, and then is packaged into pressure transducer, is convenient to mix integrated like this, can obtain very high signal voltage output.When adopting the electrostatic sealing-in technology, the positive sealing-in special glass frame at silicon (11) can further reduce sluggishness, improves reliability.Use and the identical silicon of silicon (11) structure, only need the hierarchical structure of sensitive element is changed a little, just can make acceleration transducer and flow sensor.
Claims (1)
1, a kind of semiconductor pressure sensor that utilizes the pressure-active element measuring fluid pressure of electricity is characterized in that:
A) have one top is hollow and the bottom has the sensor base (1) of tracting pressuring hole (18), sensor base (1) top is connected with hollow loam cake nut (2), a pressure-sensing device (6) is housed in loam cake nut (2), be lined with packing ring (4) between the top of pressure-sensing device (6) and the loam cake nut (2), be lined with O-ring seal (3) between bottom and sensor base (1);
B) pressure-sensing device (6) is from top to bottom successively by last compressing tablet (7), diaphragm seal (8), bearer bar (9), sensitive element base (10), silicon (11), the sealing of hole elastic membrane (12) and the back of the body paste these seven layers of compositions of liner (13), between silicon (11) and sealing of hole elastic membrane (12), directly being superimposed, mutually bonding between all the other every adjacent two layers with chemical adhesive etc., the through hole of offering at sensitive element base (10) and bearer bar (9) center is connected with the blind hole that diaphragm seal (8) center is offered, together constitute normal pressure chamber (17), on back of the body subsides liners (13), have through hole and be connected with the center pit of O-ring seal (3) and the tracting pressuring hole (18) of sensor base (1) bottom;
C) upward be processed with the Contraband shape groove that separates by two and be trapped among the enhanced sensitivity groove (20) that two straight troughs in the Contraband shape groove are formed at silicon (11) by the employing silicon planner technology, two Contraband shape grooves silicon in addition partly forms solid Zhi Bianyuan (27), and groove partly forms a reed structure with interior silicon, this reed structure supports neck (26) by the formed reed of the isolated silicon part of two Contraband shape grooves respectively and is connected with solid Zhi Bianyuan (27), in the zone near four jiaos of reed structure is the sensitizing range (25) that produces maximum stress after silicon is stressed, and is processed with silicon diffusion resistance R in four sensitizing ranges (25) respectively
1To R
4(21), silicon diffusion resistance R
5To R
8(22), silicon diffusion resistance R
9To R
12(23), silicon diffusion resistance R
13To R
16(24);
D) these four groups of silicon diffusion resistances (21 to 24) are taken two groups, 12 ends that are positioned at the Si-Al wire internal lead (16) in normal pressure chamber (17) link to each other with eight resistance respectively, the other end then respectively with sensitive element base (10) on 12 the metallization gold-plated in electrodes (15) join, the gold-plated interior electrode (15) that metallizes is connected with 12 gold-plated external electrodes of metallization (14) at sensitive element base (10) edge respectively again, become a brachium pontis after a resistance in every group of silicon diffusion resistance is in series with outer compensating resistance Rp (28) of silicon (11) and compensating resistance RP ' (29) respectively, again respectively with on the same group in other three resistance be linked to be bridge circuit, one end of these two groups of electric bridges is linked to be common port G, thereby two groups of electric bridges form seven output terminations that are formed by connecting after gold-plated external electrode (14) output of metallizing, after one seven core shielding line (5) joins with seven terminations respectively, pass the shielding line perforation (19) at compressing tablet (7) side and center, pass the center drilling at packing ring (4) and last box nut (2) top more successively and stretch out outside last box nut (2) top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN92217999U CN2136466Y (en) | 1992-10-06 | 1992-10-06 | Semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN92217999U CN2136466Y (en) | 1992-10-06 | 1992-10-06 | Semiconductor pressure transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2136466Y true CN2136466Y (en) | 1993-06-16 |
Family
ID=33765669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN92217999U Expired - Fee Related CN2136466Y (en) | 1992-10-06 | 1992-10-06 | Semiconductor pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2136466Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100390518C (en) * | 2004-01-30 | 2008-05-28 | 株式会社电装 | Sensor |
| CN102539066A (en) * | 2010-12-10 | 2012-07-04 | 比亚迪股份有限公司 | Preparation method for knock sensor |
| CN104155048A (en) * | 2013-05-13 | 2014-11-19 | 上海朝辉压力仪器有限公司 | Transmitter for floor heating |
| CN111638002A (en) * | 2020-06-11 | 2020-09-08 | 武汉飞恩微电子有限公司 | MEMS pressure sensor oil-filled core and packaging method thereof |
-
1992
- 1992-10-06 CN CN92217999U patent/CN2136466Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100390518C (en) * | 2004-01-30 | 2008-05-28 | 株式会社电装 | Sensor |
| CN102539066A (en) * | 2010-12-10 | 2012-07-04 | 比亚迪股份有限公司 | Preparation method for knock sensor |
| CN104155048A (en) * | 2013-05-13 | 2014-11-19 | 上海朝辉压力仪器有限公司 | Transmitter for floor heating |
| CN104155048B (en) * | 2013-05-13 | 2016-07-06 | 上海朝辉压力仪器有限公司 | Floor heating transmitter |
| CN111638002A (en) * | 2020-06-11 | 2020-09-08 | 武汉飞恩微电子有限公司 | MEMS pressure sensor oil-filled core and packaging method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |