CN212435657U

CN212435657U - Filter and duplexer

Info

Publication number: CN212435657U
Application number: CN202021494817.6U
Authority: CN
Inventors: 左成杰; 程伟; 汪鹏; 王政
Original assignee: Anhui Annuqi Technology Co Ltd
Current assignee: Anhui Annuqi Technology Co Ltd
Priority date: 2020-07-24
Filing date: 2020-07-24
Publication date: 2021-01-29
Anticipated expiration: 2030-07-24

Abstract

The application provides a filter and a duplexer, and relates to the technical field of wireless communication. In the present application, a filter includes: a substrate structure; the circuit structure is manufactured and formed on at least one side of the substrate structure and comprises at least one circuit layer, and at least one circuit layer is provided with at least one inductance element; the capacitor structure and/or the resonance structure are manufactured and formed on one side, close to the substrate structure, of the at least one line layer and/or one side, far away from the substrate structure, of the at least one line layer, the capacitor structure comprises at least one capacitor element, and the resonance structure comprises at least one acoustic wave resonator. Wherein the substrate structure and the line structure, and the capacitance structure and/or the resonance structure form a layered stack structure, and the inductance element and the capacitance element and/or the acoustic wave resonator are electrically connected to each other to form a filter circuit. Based on the arrangement, the problem that the integrated size of the filter manufactured in the prior art is large can be solved.

Description

Filter and duplexer

Technical Field

The application relates to the technical field of wireless communication, in particular to a filter and a duplexer.

Background

In the wireless radio frequency communication technology, the performance of the radio frequency communication equipment directly affects the quality of wireless communication. In the radio frequency communication device, in order to effectively process a received signal and a signal to be transmitted, a corresponding filtering structure needs to be set.

The inventor researches and discovers that in the existing filter structure manufacturing technology, the problem of large size of the filter structure exists due to low integration level of the filter structure, and the application range of the filter structure is limited.

SUMMERY OF THE UTILITY MODEL

In view of the above, the present application aims to provide a filter and a duplexer, so as to solve the problem that the integrated size of the filter manufactured in the prior art is large.

In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:

a filter, comprising:

a substrate structure;

the circuit structure is manufactured and formed on at least one side of the substrate structure and comprises at least one circuit layer, and at least one circuit layer is provided with at least one inductance element;

the capacitor structure and/or the resonance structure are manufactured and formed on one side, close to the substrate structure, of at least one layer of the circuit layer and/or one side, far away from the substrate structure, of the circuit layer, the capacitor structure comprises at least one capacitor element, and the resonance structure comprises at least one acoustic wave resonator;

wherein the substrate structure and the line structure, and the capacitance structure and/or the resonance structure form a layered stack structure, and the inductance element and the capacitance element and/or the acoustic wave resonator are electrically connected to each other to form a filter circuit.

In a preferred option of the embodiment of the present application, in the above-mentioned filter, at least one capacitive element and/or at least one acoustic wave resonator is formed on at least one outer surface of the substrate structure.

In a preferred option of the embodiment of the present application, in the above-mentioned filter, the substrate structure has at least one concave region, and at least one capacitive element and/or at least one acoustic wave resonator are formed in the at least one concave region.

In a preferred option of the embodiment of the present application, in the above-mentioned filter, a substrate layer is formed on an outer surface of the substrate structure in each of the recessed regions;

and at least one capacitor element and/or at least one acoustic wave resonator are manufactured and formed on the surface, not in contact with the substrate structure, of each substrate layer.

In a preferred option of an embodiment of the present application, in the above-described filter, a material of a substrate layer on which the acoustic wave resonator is fabricated is different from a material of the substrate structure.

In a preferred option of the embodiment of the present application, in the above-mentioned filter, a dielectric isolation layer is formed on the circuit layer, and at least one capacitive element and/or at least one acoustic wave resonator are formed on a side of the dielectric isolation layer away from the circuit layer.

In a preferred option of the embodiment of the present application, in the above-mentioned filter, a dielectric isolation layer is formed on a layer structure having a capacitor element and/or an acoustic wave resonator, and a line layer is formed on a side of the dielectric isolation layer away from the layer structure.

In a preferred option of the embodiment of the present application, in the above-mentioned filter, at least one circuit layer is formed on at least one outer surface of the substrate structure.

In a preferred option of the embodiment of the present application, in the above-mentioned filter, the substrate structure has a connection via penetrating through the substrate structure, and the connection via is filled with a metal material for electrically connecting two opposite surfaces of the substrate structure.

On the basis, the embodiment of the present application further provides a duplexer, including:

a reception filter for processing a received signal;

the transmitting filter is used for processing a signal to be transmitted;

at least one of the receiving filter and the transmitting filter is the filter.

The filter and the duplexer provided by the application can form the filter comprising the inductance element, the capacitance element and/or the acoustic wave resonator by manufacturing and forming the line structure comprising at least one line layer on at least one side of the provided substrate structure and manufacturing and forming the capacitance structure and/or the resonance structure on at least one side of at least one line layer. Therefore, the line structure, the capacitor structure and the resonance structure actually form a stacked structure, so that the integration level of the formed filter can be improved, the integration size of the filter can be smaller, the problem that the integration size of the filter structure manufactured based on the prior art is larger (for example, each element of the filter structure is manufactured and formed respectively and then packaged into a whole) is solved, the application range of the manufactured filter is further improved, for example, the smaller the volume is, the convenience is brought to setting in various application environments, the practical value of the filter is extremely high, and the filter can be widely applied.

In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1 is a schematic flow chart of a filter manufacturing method according to an embodiment of the present application.

Fig. 2 is a schematic structural diagram of a filter provided in an embodiment of the present application.

Fig. 3 is a schematic diagram of a manufacturing position of an inductance element according to an embodiment of the present disclosure.

Fig. 4 is a schematic diagram of another manufacturing position of an inductance element according to an embodiment of the present disclosure.

Fig. 5 is a flowchart illustrating the sub-steps included in step S120 in fig. 1.

Fig. 6 is a schematic diagram illustrating an effect of fabricating a circuit layer according to an embodiment of the present application.

Fig. 7 is a schematic diagram of a first manufacturing position of a capacitive element according to an embodiment of the present disclosure.

Fig. 8 is a schematic diagram of a second manufacturing position of a capacitive element according to an embodiment of the present disclosure.

Fig. 9 is a schematic diagram of a third manufacturing position of a capacitive element according to an embodiment of the present disclosure.

Fig. 10 is a flowchart illustrating sub-steps included in step S130 in fig. 1.

Fig. 11 is a schematic diagram illustrating an effect of manufacturing a capacitive element according to an embodiment of the present application.

Fig. 12 is a schematic circuit diagram of a duplexer provided in an embodiment of the present application.

Icon: 10-a duplexer; 12-a receive filter; 14-a transmit filter; 100-a filter; 110-substrate structure; 120-line structure; 121-an inductive element; 130-a capacitive structure; 131-a capacitive element; 140-a resonant structure; 141-acoustic wave resonator; 150-dielectric isolation layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

As shown in fig. 1 and fig. 2, the present application provides a filter manufacturing method for manufacturing and forming a filter 100. The filter manufacturing method may include step S110, step S120, and step S130, which is described in detail below.

In step S110, a substrate structure 110 is provided.

In the present embodiment, the substrate structure 110 may be provided first, so that other structures (such as the line structure 120, the capacitor structure 130, the resonant structure 140, etc.) may be fabricated and formed on the basis of the substrate structure 110.

Step S120, forming a circuit structure 120 on at least one side of the substrate structure 110.

In the present embodiment, after providing the substrate structure 110 based on step S110, a circuit structure 120 may be fabricated on at least one side of the substrate structure 110.

The circuit structure 120 may include at least one circuit layer, and at least one circuit layer has at least one inductance element 121, so as to obtain at least one inductance element 121.

In step S130, a capacitor structure 130 and/or a resonant structure 140 is formed on at least one of the circuit layers near the substrate structure 110 and/or far from the substrate structure 110.

In this embodiment, after providing the substrate structure 110 based on the step S110, the capacitor structure 130 and/or the resonant structure 140 may be further fabricated and formed, and the capacitor structure 130 and/or the resonant structure 140 may be located on a side of at least one of the circuit layers close to the substrate structure 110 and/or a side far away from the substrate structure 110.

Wherein the capacitive structure 130 may include at least one capacitive element 131, and the resonant structure 140 may include at least one acoustic wave resonator 141. As such, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be formed.

Also, the substrate structure 110 and the line structure 120, and the capacitor structure 130 and/or the resonator structure 140 may form a layered stack structure, and the inductance element 121 and the capacitor element 131 and/or the acoustic wave resonator 141 may be electrically connected to each other to form a filter circuit.

Based on the above method, it is actually possible to form the layered stacked filter 100 (including the inductance element 121 and at least one of the capacitance element 131 and the acoustic wave resonator 141, forming a stacked relationship) on the provided substrate structure 110, that is, the substrate structure 110, the line structure 120, the capacitance structure 130, and the resonance structure 140 actually form a stacked structural relationship, and thus, the integration degree of the formed filter 100 can be improved, so that the integration size of the filter 100 can be smaller, thereby improving the problem that the filter structure manufactured based on the prior art has a larger integration size.

In the first aspect, it should be noted that, in the step S110, a specific manner of providing the substrate structure 110 is not limited, and may be selected according to practical application requirements.

For example, in an alternative example, a material structure of silicon, glass, quartz, sapphire, niobium lithiate, and lithium tantalate may be directly provided as the substrate structure 110.

For another example, in another alternative example, a substrate material may also be provided as the substrate structure 110. However, considering that there is generally one copper foil layer on both sides of the substrate in the substrate material, the copper foil may be removed to form the substrate structure 110, or the capacitor element 131, the inductor element 121, or the like may be directly manufactured using the copper foil.

In the second aspect, it should be noted that, in the step S120, a specific manner for forming the circuit structure 120 is not limited, and may be selected according to actual application requirements.

For example, in an alternative example, in conjunction with fig. 3, at least one wiring layer may be fabricated based on at least one outer surface of the substrate structure 110.

That is, a circuit layer or a plurality of circuit layers stacked on one another may be formed on the basis of one outer surface of the substrate structure 110. One or more circuit layers may be formed on two opposite outer surfaces of the substrate, respectively, that is, one of the outer surfaces may be formed with one or more circuit layers stacked thereon, and the other outer surface may be formed with one or more circuit layers stacked thereon.

For another example, in another alternative example, in conjunction with fig. 4, after a layer structure having the capacitive element 131 and/or the acoustic wave resonator 141 is formed, a wiring layer may be formed based on the dielectric isolation layer 150 formed on the layer structure.

That is, in a specific application example, after a layer structure having the capacitor element 131 is formed, a dielectric isolation layer 150 is formed on the layer structure, and then at least one wiring layer is formed based on the dielectric isolation layer 150.

In another specific application example, after a layer structure having the acoustic wave resonator 141 is formed, a dielectric isolation layer 150 is formed on the layer structure, and then at least one wiring layer is formed based on the dielectric isolation layer 150.

In another specific application example, after a first layered structure having the capacitance element 131 is formed on one side of the substrate structure 110, a second layered structure having the acoustic wave resonator 141 is formed on the other side of the substrate structure 110, a first dielectric isolation layer and a second dielectric isolation layer are formed on the first layered structure and the second layered structure, respectively, and then at least one line layer is formed on the basis of the first dielectric isolation layer and the second dielectric isolation layer.

Optionally, in the above steps, a specific manner of forming the line layer is not limited, and may be selected according to actual application requirements.

For example, in an alternative example, when a circuit layer is fabricated on the basis of the dielectric isolation layer 150, a metal conductive layer may be formed on the dielectric isolation layer 150, and then a hole may be drilled on the basis of a side of the metal conductive layer away from the dielectric isolation layer 150 to penetrate through the metal conductive layer and the dielectric isolation layer 150, so that another metal conductive layer is formed on the basis of a side of the metal conductive layer away from the dielectric isolation layer 150, so that the thickness of the metal conductive layer is increased, and the through hole formed by drilling is filled, so that the metal conductive layer can be electrically connected to the capacitive element 131 or the acoustic wave resonator 141 on the side of the dielectric isolation layer 150 away from the metal conductive layer.

For another example, in another alternative example, with reference to fig. 5 and 6, when the circuit layer is fabricated based on the substrate structure 110 and the substrate structure 110 has a metal foil thereon (for example, a substrate material is used to provide the substrate structure 110), step S120 may include step S121, step S122, step S123, and step S124, which are described in detail below.

Step S121, performing a windowing etching operation on the metal foil on the substrate structure 110.

In this embodiment, when the substrate material is used as the substrate structure 110 in step S110, a windowing etching operation may be performed on the metal foil on the substrate structure 110. In this way, the thickness of the metal foil can be reduced to facilitate subsequent drilling operations.

Step S122, performing a drilling operation on the surface of the metal foil after the window etching, which is away from the substrate structure 110, to form a connection via penetrating through the metal foil and the substrate structure 110.

In this embodiment, after performing the windowing etching operation on the metal foil based on step S121, a drilling operation (e.g., laser drilling) may be performed on a side of the metal foil away from the substrate structure 110 to penetrate through the metal foil and the substrate structure 110. In this way, a connecting via may be formed through the metal foil and the substrate structure 110.

Step S123, performing a metal electroplating operation on the surface of the drilled metal foil away from the substrate structure 110 to form a metal layer covering the metal foil and filling the connection via.

In this embodiment, after the drilling operation is performed on the metal foil based on step S122, a metal plating operation may be performed on the side of the metal foil remote from the substrate structure 110. In this manner, a metal layer covering the metal foil and filling the connecting vias can be formed such that the side of the substrate structure 110 remote from the metal foil can be electrically connected to the metal foil.

And step S124, carrying out pattern etching operation on one surface of the metal layer, which is far away from the metal foil, so as to form a circuit layer.

In the present embodiment, after the metal plating operation is performed on the metal foil based on step S123 to form the metal layer, a pattern etching operation may be performed on the side of the metal layer away from the metal foil. Thus, a wiring layer can be formed.

It is understood that the line layer formed in step S124 may refer to a layered structure having the inductance element 121, or may refer to a layered structure without the inductance element 121, such as a conductive connection line for connecting different elements (e.g., between the inductance elements 121, between the inductance element 121 and the capacitance element 131, between the inductance element 121 and the acoustic wave resonator 141, between the capacitance elements 131, between the acoustic wave resonators 141, etc. in other layered structures).

After the wiring layer is formed in step S124, pattern optical detection, brown oxidation, dielectric lamination, and the like may be performed.

The pattern optical detection may refer to detecting a pattern of the formed circuit layer (such as the pattern of the inductance element 121) to determine whether the circuit layer meets the requirement. The brown oxidation process may refer to a cleaning process of residual films and contaminants caused by etching on the circuit layer to be formed, and a deposition of an organic metal film on the surface of the circuit layer to improve the adhesion capability of the circuit layer (e.g., the adhesion capability with the dielectric isolation layer 150 to be laminated). Dielectric layer processing may refer to forming a dielectric isolation layer 150 on the formed wiring layer.

In addition, as for the dielectric isolation layer 150, if the dielectric isolation layer 150 is not the outermost layer of the filter 100, an isolation layer may be formed on the circuit layer (or on the capacitor element 131 or the acoustic wave resonator 141 formed in the manufacturing process) in a press-fit manner; if the dielectric isolation layer 150 is the outermost layer of the filter 100, a solder resist layer may be formed on the wiring layer (or on the capacitor element 131 or the acoustic wave resonator 141 to be formed).

The materials of the isolation layer and the solder mask layer can be the same, such as rubber materials, but the hardness of the isolation layer and the solder mask layer can be different, such as the hardness of the isolation layer can be smaller than that of the solder mask layer.

It is understood that, when the solder resist layer is formed, a lead of the wiring layer, the capacitor element 131 or the acoustic wave resonator 141 needs to be exposed, and in order to protect the lead, the lead may be subjected to a gold plating process.

In the second aspect, it should be noted that, in step S130, a specific manner of forming the capacitor structure 130 and/or the resonant structure 140 is not limited, and may be selected according to practical application requirements.

For example, in an alternative example, only the capacitor structure 130 may be fabricated. For another example, in another alternative example, only the resonant structure 140 may be fabricated. As another example, in another alternative example, the capacitive structure 130 and the resonant structure 140 may be fabricated to be formed.

The capacitive structure 130 and/or the resonant structure 140 are formed by forming at least one capacitive element 131 and/or at least one acoustic wave resonator 141.

Alternatively, the specific manner of forming the at least one capacitive element 131 and/or the at least one acoustic wave resonator 141 is not limited, and may be selected according to the requirements of practical applications.

For example, in an alternative example, in conjunction with fig. 7, to ensure that the formed capacitive element 131 and/or acoustic wave resonator 141 have high performance, step S130 may include the following sub-steps:

at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be fabricated on the basis of at least one outer surface of the substrate structure 110.

That is, after providing the substrate structure 110 based on step S110, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be fabricated and formed on the surface of the substrate structure 110.

In detail, in a specific application example, at least one capacitive element 131 or at least one acoustic wave resonator 141 may be fabricated on an outer surface of the substrate structure 110. In another specific application example, at least one capacitive element 131 may be fabricated and formed on two outer surfaces of the substrate structure 110, respectively. In another specific application example, at least one capacitor element 131 may be formed on one outer surface of the substrate structure 110, and at least one acoustic wave resonator 141 may be formed on the other outer surface of the substrate structure 110. In another specific application example, at least one acoustic wave resonator 141 may be fabricated on each of the two outer surfaces of the substrate structure 110.

For another example, in another alternative example, with reference to fig. 8, based on certain process requirements, for example, the pressing process precision of the dielectric isolation layer 150 is higher, the step S130 may also include the following sub-steps:

the at least one capacitive element 131 and/or the at least one acoustic wave resonator 141 may be formed on the basis of a dielectric isolation layer 150 formed on the wiring layer after the wiring layer is formed.

That is, after forming a circuit layer based on step S120, a dielectric isolation layer 150 may be formed on the circuit layer, and then at least one capacitor element 131 and/or at least one acoustic wave resonator 141 may be formed on a surface of the dielectric isolation layer 150 away from the circuit layer.

In detail, in a specific application example, at least one capacitive element 131 may be formed on a side of the dielectric isolation layer 150 away from the circuit layer. In another alternative example, at least one acoustic wave resonator 141 may be formed on a side of the dielectric isolation layer 150 away from the wiring layer. In another specific application example, at least one capacitor element 131 may be formed on a side of the dielectric isolation layer 150 away from the circuit layer, and then a dielectric isolation layer 150 is formed, and at least one acoustic wave resonator 141 is formed on a side of the dielectric isolation layer 150 away from the capacitor element 131. In another specific application example, at least one acoustic wave resonator 141 may be fabricated on a side of the dielectric isolation layer 150 away from the circuit layer, and then a dielectric isolation layer 150 is fabricated, and at least one capacitor element 131 is fabricated on a side of the dielectric isolation layer 150 away from the acoustic wave resonator 141.

For another example, in another alternative example, in order to improve the integration degree of the filter 100 formed by manufacturing, so that the integration size can be smaller, the step S130 may include the following sub-steps:

at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be fabricated in at least one recessed region of the substrate structure 110.

That is, after the substrate structure 110 is raised based on step S110, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be fabricated and formed in at least one concave region of the substrate structure 110.

In detail, in a specific application example, at least one capacitive element 131 may be fabricated and formed in at least one concave region of the substrate structure 110. In another specific application example, at least one acoustic wave resonator 141 may also be fabricated on at least one concave region of the substrate structure 110. In another alternative example, at least one capacitor element 131 and at least one acoustic wave resonator 141 may be formed on a plurality of concave regions of the substrate structure 110.

For example, in an alternative example, in order to reduce the complexity of the process, in conjunction with fig. 9, step S130 may include the following sub-steps:

first, at least one concave region may be formed on at least one outer surface of the substrate structure 110; next, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be fabricated on the basis of the outer surface of the substrate structure 110 in the recessed region.

For another example, in an alternative example, in order to ensure that the manufactured capacitive element 131 and/or the acoustic wave resonator 141 have good performance, in conjunction with fig. 10 and 11, step S130 may also include step S131, step S132, and step S133, which are described in detail below.

Step S131, at least one concave region is formed on at least one outer surface of the substrate structure 110.

In this embodiment, after providing the substrate structure 110 based on the step S110, at least one concave region may be formed based on at least one outer surface of the substrate structure 110.

Step S132, forming a substrate layer on each of the concave regions based on the outer surface of the substrate structure 110.

In this embodiment, after the at least one concave region is formed based on the step S131, a substrate layer may be formed based on the outer surface of the substrate structure 110 in each concave region. In this way, the surface for manufacturing the capacitive element 131 and/or the acoustic wave resonator 141 can be made relatively flat, and the capacitive element 131 and/or the acoustic wave resonator 141 can be ensured to have good performance while being convenient to manufacture.

Step S133, forming at least one capacitor 131 and/or at least one acoustic wave resonator 141 on the basis of the surface of each substrate layer not in contact with the substrate structure 110.

In this embodiment, after the substrate layers are formed based on the step S132, for each substrate layer of the concave region, the capacitive element 131 or the acoustic wave resonator 141 may be formed based on a surface of the substrate layer that is not in contact with the substrate structure 110. In this manner, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 can be fabricated.

Optionally, in step S131, at least one concave region may be formed on one outer surface of the substrate structure 110, or at least one concave region may be formed on two opposite outer surfaces of the substrate structure 110.

In addition, the specific manner of forming the recessed region is not limited, and may be selected according to the actual application requirements, for example, in an alternative example, the recessed region may be formed by etching or the like.

Optionally, in step S132, a specific manner of forming the substrate layer is not limited, and may also be selected according to a requirement of an actual application.

For example, in an alternative example, the substrate layer may be formed based on the same material as the substrate structure 110. That is, the material of the substrate layer and the substrate structure 110 can be the same.

For another example, in another alternative example, after the research of the inventors of the present application, it is found that a material suitable for forming the recess region may not be suitable for forming the acoustic wave resonator 141, and thus, the substrate layer may be formed based on a material different from the substrate structure 110. That is, the material of the substrate layer may be different from the material of the substrate structure 110.

In detail, in a specific application example, the material of the substrate structure 110 may be a substrate material or a PCB (Printed Circuit Board) material, and the material of the substrate layer may be silicon, niobium lithiate or lithium tantalate.

It is to be understood that, in the above examples, the specific form of the capacitive element 131 and/or the acoustic wave resonator 141 to be formed is not limited, and may be selected according to the requirements of practical applications.

On one hand, the capacitor element 131 may be a Metal Insulator Metal (MIM) capacitor, or may be an integrated capacitor, that is, at least one capacitor element 131 is integrated into a whole to form an integrated capacitor chip.

On the other hand, the acoustic wave resonator 141 may be a single resonator, or may be an integrated resonator, that is, at least one acoustic wave resonator 141 is integrated.

When the flat capacitor is manufactured, first, a first metal plate may be formed by electroplating or the like (if a substrate material is used as the substrate structure 110, and when the flat capacitor is manufactured on the outer surface of the substrate structure 110, the first metal plate may also be formed by pattern etching based on a copper foil included in the substrate material), then, a dielectric layer (which may be an electrolyte film such as tantalum oxide, silicon nitride or the like) may be formed based on the first metal plate by PECVD (Plasma Enhanced Chemical Vapor Deposition) or the like, and then, a second metal plate may be formed by electroplating or the like based on the dielectric layer.

Also, specific types of the Acoustic Wave Resonator 141 may include, but are not limited to, a Surface Acoustic Wave (SAW), a solid assembled Resonator (SMR), a Film Bulk Acoustic Wave (FBAR), and the like.

It is understood that, in the above example, the specific sequence of step S120 and step S130 is not limited, and may be selected according to the actual application requirement.

For example, in an alternative example, step S120 may be performed to form the line structure 120, and then step S130 may be performed to form the capacitor structure 130 and/or the resonant structure 140.

For another example, in another alternative example, step S130 may be performed to form the capacitor structure 130 and/or the resonant structure 140, and then step S120 may be performed to form the line structure 120.

For another example, in another alternative example, the steps S120 and S130 may be performed alternately, such as after performing the step S120 once to form a circuit layer, performing the step S130 once to form at least one capacitive element 131 or at least one acoustic wave resonator 141 once, and performing the step S120 once again to form a circuit layer.

With further reference to fig. 2, the present application also provides a filter 100. The filter 100 may be manufactured based on the above-mentioned filter manufacturing method.

That is, the filter 100 may include a substrate structure 110 and an inductive structure, and further include a capacitive structure 130 and/or a resonant structure 140. The inductor structure includes at least one circuit layer, and at least one circuit layer has at least one inductor element 121. The capacitance structure 130 may include at least one capacitance element 131, the resonance structure 140 may include at least one acoustic wave resonator 141, and the inductance element 121 and the capacitance element 131 and/or the acoustic wave resonator 141 may be electrically connected to each other to form a filter circuit.

In this way, the substrate structure 110 and the inductor structure, and one of the capacitor structure 130 and the resonant structure 140, may actually form a layered stacked structural relationship, so that the filter 100 may have a higher integration level, i.e., a smaller integration size.

In the first aspect, it should be noted that, for the substrate structure 110, a specific structure of the substrate structure 110 is not limited, and may be selected according to a practical application requirement.

For example, in an alternative example, the substrate structure 110 may have a connection via penetrating through the substrate structure 110, and the connection via is filled with a metal material for electrically connecting two opposite sides of the substrate structure 110, such as different elements (e.g., the inductive element 121, the capacitive element 131, and the acoustic wave resonator 141) connected to the two sides of the substrate structure 110, based on the requirement of electrical connection.

In the second aspect, it should be noted that, for the circuit structure 120, a specific structure of the circuit structure 120 is not limited, and may be selected according to a practical application requirement.

For example, in an alternative example, a dielectric isolation layer 150 may be formed on a layer structure having the capacitance element 131 and/or the acoustic wave resonator 141, and a wiring layer may be formed on a side of the dielectric isolation layer 150 away from the layer structure.

For another example, in another alternative example, at least one circuit layer may be formed on at least one outer surface of the substrate structure 110.

In the third aspect, it should be noted that, for the capacitor structure 130 and/or the resonant structure 140, specific structures of the capacitor structure 130 and/or the resonant structure 140 are not limited, and may be selected according to practical application requirements.

For example, in an alternative example, at least one capacitive element 131 may be formed and/or at least one acoustic wave resonator 141 may be formed on at least one outer surface of the substrate structure 110.

For another example, in another alternative example, a dielectric isolation layer 150 may be formed on a layer formed on the circuit layer, and at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be formed on a side of the dielectric isolation layer 150 away from the circuit layer.

For another example, in another alternative example, the substrate structure 110 may have at least one concave region, and at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be formed in the at least one concave region.

In detail, in a specific application example, in each of the concave regions, the outer surface of the substrate structure 110 may be formed with a substrate layer. In this way, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 can be formed on each of the substrate layers on the side not in contact with the substrate structure 110.

That is, the capacitive element 131 and/or the acoustic wave resonator 141 may be formed on the concave region of the substrate structure 110 through a substrate layer.

Wherein the material type of the substrate layer is not limited. For example, in an alternative example, the material of the substrate layer on which the acoustic wave resonator 141 is fabricated may be different from the material of the substrate structure 110.

It should be noted that when the circuit layers are multiple layers, only the dielectric isolation layer 150 may be spaced between the multiple circuit layers, or the dielectric isolation layer 150 and other layered structures, such as the capacitor structure 130 and/or the resonant structure 140, may be spaced between the multiple circuit layers.

Moreover, when the plurality of capacitor elements 131 are located in different layered structures, only the dielectric isolation layer 150 may be spaced between different capacitor elements 131, or the dielectric isolation layer 150 and other layered structures, such as the line layer and/or the resonant structure 140, may be spaced therebetween.

And, when the acoustic wave resonators 141 are plural and located in different layered structures, only the dielectric isolation layer 150 may be spaced between different acoustic wave resonators 141, or the dielectric isolation layer 150 and other layered structures, such as the capacitor structure 130 and/or the resonant structure 140, may be spaced therebetween.

It is understood that the specific structure of the filter 100 can refer to the explanation of the filter manufacturing method, and is not repeated herein.

With reference to fig. 12, the present embodiment also provides a duplexer 10. The duplexer 10 may include a receiving filter 12 and a transmitting filter 14, and at least one of the receiving filter 12 and the transmitting filter 14 belongs to the filter 100.

In detail, the receive filter 12 may be configured to process a received signal (e.g., a radio frequency signal), and the transmit filter 14 may be configured to process a signal to be transmitted.

In summary, the filter 100 and the duplexer 10 provided in the present application may form the filter 100 including the inductance element 121, the capacitance element 131, and/or the acoustic wave resonator 141 by forming the line structure 120 including at least one line layer on at least one side of the substrate structure 110, and forming the capacitance structure 130 and/or the resonance structure 140 on at least one side of the at least one line layer. Thus, since the circuit structure 120, the capacitor structure 130, and the resonant structure 140 actually form a stacked structure, the integration level of the formed filter 100 can be improved, so that the integrated size of the filter 100 can be smaller, thereby improving the problem that the integrated size of the filter structure (for example, each element of the filter structure is separately manufactured and formed and then packaged into a whole) manufactured based on the prior art is larger, and further improving the application range of the manufactured filter 100, for example, the smaller the volume is, the smaller the filter structure can be conveniently disposed in various application environments, so that the practical value is very high, and the filter structure can be widely applied.

The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A filter, comprising:

a substrate structure;

2. A filter according to claim 1, characterized in that at least one capacitive element and/or at least one acoustic wave resonator is formed on at least one outer surface of the substrate structure.

3. The filter according to claim 1, characterized in that the substrate structure has at least one recessed area, and at least one capacitive element and/or at least one acoustic wave resonator are formed in the at least one recessed area.

4. The filter of claim 3, wherein in each of the recessed regions, an outer surface of the substrate structure is formed with a substrate layer;

5. The filter of claim 4, wherein the substrate layer on which the acoustic wave resonator is fabricated is of a different material than the substrate structure.

6. A filter according to claim 1, characterised in that a dielectric spacer layer is formed on the wiring layer and at least one capacitive element and/or at least one acoustic resonator is formed on the side of the dielectric spacer layer remote from the wiring layer.

7. A filter according to any of claims 1-6, characterized in that a dielectric isolation layer is formed on the layer structure formed with the capacitive elements and/or the acoustic wave resonators, and that a line layer is formed on the side of the dielectric isolation layer remote from the layer structure.

8. A filter according to any one of claims 1-6, characterised in that at least one wiring layer is made on at least one outer surface of the substrate structure.

9. A filter according to any one of claims 1-6, characterized in that the substrate structure is provided with connecting vias extending through the substrate structure and filled with a metallic material for electrically connecting opposite sides of the substrate structure.

10. A duplexer, characterized by comprising:

a reception filter for processing a received signal;

the transmitting filter is used for processing a signal to be transmitted;

wherein at least one of the receiving filter and the transmitting filter is the filter of any one of claims 1 to 9.