CN211743138U - A power module and a combined unit applying the power module - Google Patents

Abstract

The utility model discloses a power module. The power module includes a chip, a lead frame, a substrate, a casing and a connection terminal. The first surface of the chip is fixed on the substrate by metal sintering. The lead frame is integrally formed, and one end of the lead frame is fixedly connected to the second surface of the chip and the substrate by means of metal sintering, so as to form a circuit of the power module. The shell is filled with plastic resin to plastic-encapsulate the chip, the lead frame and the substrate. One end of the connection terminal is plastic-sealed in the casing and electrically connected to the substrate, and the other end of the connection terminal extends out of the casing. The connection terminal includes an input terminal and an output terminal, and the input terminal and the output terminal are respectively arranged on opposite sides of the casing. The utility model also discloses a combination unit applying the power module. This enhances the reliability and power density of the power module.

Description

A power module and a combined unit applying the power module

technical field

The utility model relates to a power module and a combined unit applying the power module.

Background technique

Existing high-power power modules, such as silicon-based insulating power semiconductor modules, are modular products that combine multiple Si-1GBT chips and diode chips to form circuits on an insulating base plate. The lower surfaces of these chips are usually soldered to the substrate, and are also soldered to the heat sink to improve the strength and heat dissipation of the substrate.

However, the use of solder material will limit the operating temperature to around 175°C, and due to temperature cycling, the deterioration of the solder joint will increase, and the thermal resistance will increase, thereby affecting the reliability of the power module; in addition, due to the low thermal conductivity of solder, the power module The volume is generally larger, thereby reducing the power density.

Utility model content

In view of this, it is necessary to provide a power module with high reliability and high power density and a combined unit applying the power module.

The technical scheme that the utility model proposes for reaching the above-mentioned purpose is as follows:

A power module, the power module includes a chip, a lead frame, a substrate, a casing and a connection terminal, a first surface of the chip is fixed on the substrate by metal sintering, the lead frame is integrally formed, and the One end of the lead frame is fixedly connected to the second surface of the chip and the substrate by metal sintering to form the circuit of the power module, and the casing is filled with plastic resin to plastically encapsulate the chip and the lead a frame and the base plate, one end of the connection terminal is plastic-sealed in the casing and electrically connected to the base plate, the other end of the connection terminal protrudes out of the casing, and the connection terminal includes an input terminal and an output terminal The input terminal and the output terminal are respectively arranged on opposite sides of the casing.

Further, the chip includes several wide-bandgap semiconductor devices to form a quarter-bridge module circuit or a half-bridge module circuit or a full-bridge module circuit.

Further, the chip includes several wide-bandgap semiconductor devices, thermistors and current sensors to form an intelligent power module circuit.

Further, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200um.

Further, the thickness of the lead frame is 0.5-1.5 mm.

Further, the substrate is a copper-clad ceramic board.

Further, the housing further includes a fixing portion for fixing the power module, and the fixing portion is a through hole passing through the housing.

Further, the housing further includes a fixing part for fixing the power module, the fixing part is two fixing parts, and the two fixing parts are respectively dislocated on opposite sides of the housing, and are connected to the The direction in which the connection terminal protrudes from the casing is vertical.

A combined unit, the combined unit includes a heat dissipation module and three above-mentioned power modules, the three power modules are fixed on the heat dissipation module in a close arrangement by metal sintering, and the input terminals of the three power modules are On the same side, and the output terminals of the three power modules are on the opposite side.

Further, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200um.

Further, the three power modules are connected in parallel.

Further, the three power modes are combined into a full-bridge module circuit.

The above-mentioned power module and the combination unit applying the power module are connected by sintering the chips, lead frames and substrates constituting the power module by means of metal sintering with high thermal conductivity, and a quarter of the power module is also constituted by an integrally formed lead frame. Different module circuits such as a bridge module circuit or a half-bridge module circuit or a full-bridge module circuit. In this way, the reliability of the power module can be enhanced and the power density can be improved, and different functional requirements can be flexibly met through different combinations of multiple power modules, and the application scope can be expanded.

Description of drawings

FIG. 1 is a schematic structural diagram of a preferred embodiment of the power module of the present invention.

FIG. 2 is another schematic structural diagram of a preferred embodiment of the power module of the present invention.

FIG. 3 is a module schematic diagram of a preferred embodiment of the power module of the present invention.

FIG. 4 is a module schematic diagram of another preferred embodiment of the power module of the present invention.

FIG. 5 is a schematic diagram of the application structure of a preferred embodiment of the combined unit of the present invention.

Description of main component symbols

Power Module 100

Chip 10

Lead frame 20

Substrate 30

shell 40

Fixed part 42

Through hole 422

Fixtures 424

connection terminal 50

Input terminal 52

Output terminal 54

Cooling Module 200

Input module 300

Output module 400

Combination unit 500

The following specific embodiments will further illustrate the present invention with reference to the above drawings.

Detailed ways

In order to make the purpose, technical solutions and advantages of the present utility model more clearly understood, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not intended to limit the present invention.

Please refer to FIG. 1 , the present invention provides a power module 100 . The power module 100 includes a chip 10 , a lead frame 20 , a substrate 30 and a housing 40 . In this embodiment, the power module 100 can be applied to power equipment such as inverters.

The first surface of the chip 10 is fixed on the substrate 30 by metal sintering. The lead frame 20 is integrally formed, and the lead frame 20 is fixedly connected to the second surface of the chip 10 and the substrate 30 by metal sintering, so as to form a circuit of the power module 100 . The casing 40 is filled with plastic resin to encapsulate the chip 10 , the lead frame 20 and the substrate 30 .

Further, please refer to FIG. 2 , which is another schematic structural diagram of a preferred embodiment of the present invention. The power module 100 further includes a connection terminal 50 . One end of the connecting terminal 50 is plastic-sealed in the casing 40 and electrically connected to the substrate 30 , and the other end of the connecting terminal 50 extends out of the casing 40 to connect with other power modules (not shown) electrical connection. The connection terminal 50 includes an input terminal 52 and an output terminal 54 . The input terminal 52 and the output terminal 54 are respectively disposed on opposite sides of the housing 40 .

In this embodiment, the chip 10 includes several wide-bandgap semiconductor devices to form a quarter-bridge module circuit, a half-bridge module circuit, or a full-bridge module circuit, that is, a 1in1 power module or a 2in1 power module or a 6in1 power module module. In other embodiments, the chip 10 may further include several wide bandgap semiconductor devices, thermistors and current sensors to form an intelligent power module circuit.

In this embodiment, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200um. Due to the higher thermal conductivity of copper or silver, the operating temperature range of the power module can be increased, so that it can work in a higher temperature environment, and thermal resistance can be reduced, thereby improving the reliability of the power module 100 .

In this embodiment, the lead frame 20 is made of metal material, such as copper. The lead frame has a thickness of 0.5-1.5 mm. The present invention can improve the bonding strength between the chip 10 , the substrate 30 and the housing 40 by adopting an integrally formed lead frame, which not only enhances the reliability of the power module 100 , but also facilitates the The miniaturized design of the power module 100 can be used to improve the power density.

In this embodiment, the substrate 30 is a copper-clad ceramic board.

Further, please refer to FIG. 3 and FIG. 4 , the housing 40 further includes a fixing portion 42 for fixing the power module 100 to other functional modules, such as a heat dissipation module. In a preferred embodiment, the fixing portion 42 is a through hole 422 penetrating the casing 40 (as shown in FIG. 3 ). In this way, the power module 100 can be fixed on the heat dissipation module through the through hole 422 by using a locking member, such as a screw.

In another embodiment, the fixing portion 42 may also include two fixing pieces 424 (as shown in FIG. 4 ), and the two fixing pieces 424 are respectively disposed on opposite sides of the housing 40 in a staggered position, and are connected to the The direction in which the terminals 50 protrude from the housing 40 is vertical. In this way, when a plurality of the power modules 100 are assembled, the distance between the power modules 100 can be reduced, thereby reducing the volume of the entire module.

Please refer to FIG. 5 , the present invention further provides a combination unit 500 applying the above-mentioned power module. The combined unit 500 includes three power modules 100 and a heat dissipation module 200 . The three power modules 100 are closely arranged on the heat dissipation module 200 by metal sintering, so that the input terminals 52 of the three power modules 100 are on the same side, and the output terminals 54 of the three power modules 100 are on the opposite side. In use, the input terminal 52 of the connection terminal 50 can be electrically connected to the external input module 300 , and the output terminal 54 of the connection terminal 50 can be electrically connected to the external output module 400 .

In this embodiment, the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200um.

In this embodiment, the three power modules 100 are 2in1 power modules, and the three power modules 100 are connected in parallel. In this way, the withstand voltage/current of a single 2in1 power module is 1200V/200A, but when three such power modules are used in combination, the withstand voltage/current is 1200/600A.

Furthermore, the three power modules 100 in the combination unit 500 can also be driven independently to output three-phase power from the output terminal 54 . Further, the three power modules 100 can also be combined into a 6in1 power module, so that the combining unit 500 can realize an inverter circuit configuration. In this way, the service life of the power module can be increased and the application range can be expanded.

Power modules encapsulated by power devices can be widely used in photovoltaic, electric vehicles and other application fields. Power modules take high power density and high reliability as the development route and goal. Power modules with high power density and high reliability are conducive to reducing the size of the system and improving the high power density of the system. In the utility model, the chips, lead frames and substrates constituting the power module are connected by means of metal sintering with high thermal conductivity, and the integrated lead frame is used to form a quarter-bridge module circuit or a half-bridge module circuit of the power module. Or different module circuits such as full-bridge module circuits, which can not only enhance the reliability of the power module and improve the power density, but also flexibly meet different functional requirements and expand the application range through different combinations of multiple power modules.

The above are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included in the present invention. within the scope of protection of the utility model.

Claims (12)

1. A power module, characterized in that the power module comprises a chip, a lead frame, a substrate, a casing and a connection terminal, the first surface of the chip is fixed on the substrate by metal sintering, and the lead The frame is integrally formed, and one end of the lead frame is fixedly connected to the second surface of the chip and the substrate by metal sintering to form the circuit of the power module. the chip, the lead frame and the substrate, one end of the connection terminal is plastic-sealed in the casing and electrically connected to the substrate, the other end of the connection terminal protrudes out of the casing, the connection terminal is The terminals include an input terminal and an output terminal, and the input terminal and the output terminal are respectively disposed on opposite sides of the casing. 2 . The power module of claim 1 , wherein the chip comprises several wide-bandgap semiconductor devices to form a quarter-bridge module circuit, a half-bridge module circuit, or a full-bridge module circuit. 3 . 3 . The power module of claim 1 , wherein the chip comprises a plurality of wide-bandgap semiconductor devices, thermistors and current sensors to form an intelligent power module circuit. 4 . 4 . The power module according to claim 1 , wherein the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200 μm. 5 . 5 . The power module of claim 1 , wherein the lead frame has a thickness of 0.5-1.5 mm. 6 . 6. The power module of claim 1, wherein the substrate is a copper clad ceramic board. 7 . The power module of claim 1 , wherein the housing further comprises a fixing portion for fixing the power module, and the fixing portion is a through hole penetrating through the housing. 8 . 8 . The power module according to claim 1 , wherein the housing further comprises a fixing part for fixing the power module, the fixing part is two fixing parts, and the two fixing parts are respectively staggered. 9 . It is arranged on opposite sides of the casing, and is perpendicular to the direction in which the connection terminals extend out of the casing. 9. A combined unit, characterized in that the combined unit comprises a heat dissipation module and three power modules according to any one of claims 1-8, the three power modules are fixed in a close arrangement by metal sintering. on the heat dissipation module, so that the input terminals of the three power modules are on the same side, and the output terminals of the three power modules are all on the opposite side. 10. The combined unit according to claim 9, wherein the metal sintering is copper sintering or silver sintering, and the sintering thickness is 30-200um. 11. The combined unit of claim 9, wherein the three power modules are connected in parallel. 12. The combination unit of claim 9, wherein the three power modules are combined into a full-bridge module circuit.

Images