CN211509024U - Novel Kovar cavity SMD quartz crystal ceramic base structure - Google Patents
Novel Kovar cavity SMD quartz crystal ceramic base structure Download PDFInfo
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- CN211509024U CN211509024U CN201922026578.5U CN201922026578U CN211509024U CN 211509024 U CN211509024 U CN 211509024U CN 201922026578 U CN201922026578 U CN 201922026578U CN 211509024 U CN211509024 U CN 211509024U
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- 239000000919 ceramic Substances 0.000 title claims abstract description 177
- 229910000833 kovar Inorganic materials 0.000 title claims abstract description 84
- 239000010453 quartz Substances 0.000 title claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005245 sintering Methods 0.000 claims abstract description 15
- 238000007731 hot pressing Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 abstract description 8
- 238000003475 lamination Methods 0.000 abstract description 3
- 239000000047 product Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model relates to a novel Kovar cavity SMD quartz crystal ceramic base structure. The ceramic base comprises a lower ceramic substrate, an upper ceramic substrate, a conductive metal circuit and a kovar ring, which are laminated by a hot-pressing sintering process to form the ceramic base. The lower ceramic substrate and the upper ceramic substrate are both printed with conductive metal circuits on the upper surface and the lower surface, and the conductive metal circuits on the upper surface and the lower surface of the upper ceramic substrate and the lower ceramic substrate are connected through an internal metal through hole or an external metal side hole; the lower ceramic substrate and the upper ceramic substrate are laminated together through a hot-pressing sintering process and are arranged at the bottom of the ceramic base; the Kovar ring and the ceramic substrate are laminated together through a hot-pressing sintering process, and the Kovar ring is arranged on the upper portion of the ceramic base. The ceramic base structure replaces the ceramic side wall through the kovar ring, and the ceramic side wall component is removed to form a kovar cavity structure without increasing the overall thickness of the ceramic base; the hidden trouble of poor dislocation formed by the kovar ring and the ceramic side wall is removed; the number of lamination times is reduced, and the incidence of the hidden trouble of poor sealing is reduced.
Description
Technical Field
The utility model relates to a novel Kovar cavity SMD quartz crystal ceramic base structure belongs to quartz crystal electronic components and parts and makes technical field.
Background
With the 5G and everything interconnection era, the end products are increasingly required to be thinner and smaller, quartz crystal electronic components are also developed from the prior pin-in-socket type to the surface mounting type, and especially the popularization of miniaturized quartz crystal products with smaller sizes such as 2.5mm × 2.0mm, 2.0mm × 1.6mm, 1.6mm × 1.2mm and the like is required to make the components of the crystal products thinner and smaller. The surface mount type quartz crystal product is called as an SMD quartz crystal for short, the SMD quartz crystal has a plurality of packaging modes, including a metal upper cover package, a ceramic upper cover package, a glass upper cover package, etc., wherein the metal upper cover packaging mode is common. The SMD quartz crystal product with the metal upper cover in a sealing mode mainly comprises a ceramic base, a quartz wafer and a metal upper cover, wherein the quartz wafer is fixed on a dispensing table of the ceramic base through special conductive adhesive, and then the metal upper cover and the ceramic base are welded in an electric resistance welding mode to form a sealing state, so that the SMD quartz crystal is formed. In order to adapt to the development of miniaturized SMD quartz crystal toward thinner and smaller dimensions, the development and design of the ceramic base, which is one of the main components of the SMD quartz crystal, toward thinner and smaller dimensions is very important.
The SMD quartz crystal ceramic base with the metal upper cover packaging mode is generally of a ceramic cavity structure, the ceramic base with the structure is composed of a lower ceramic substrate, an upper ceramic substrate, a ceramic side wall, a conductive metal circuit and a kovar ring, and the ceramic base is formed by the components through a laminating hot-pressing sintering process. The lower ceramic substrate and the upper ceramic substrate are printed with conductive metal circuits on the upper surface and the lower surface, and the conductive metal circuits on the upper surface and the lower surface of each layer of ceramic substrate are connected through an internal metal through hole or an external metal side hole; the lower ceramic substrate and the upper ceramic substrate are laminated together through a hot-pressing sintering process to form a ceramic substrate at the bottom of the ceramic base; the ceramic side wall and the ceramic substrate are laminated together through a hot-pressing sintering process to form a cavity of the ceramic base, and the ceramic side wall is arranged in the middle of the ceramic base; the Kovar ring and the ceramic side wall are laminated together through a hot-pressing sintering process, and the Kovar ring is arranged on the upper part of the ceramic base. The structure using the ceramic side wall as the ceramic base cavity is the structure of the existing ceramic base.
The upper ceramic substrate and the lower ceramic substrate of the ceramic base with the existing structure are laminated together, the ceramic substrate and the ceramic edge wall are laminated together, the ceramic edge wall and the Kovar ring are laminated together, the more times the ceramic base needs to be laminated in the machining process, and the more hidden troubles which cause poor sealing are generated.
The ceramic side wall of the ceramic base with the existing structure and the inner ring of the kovar ring have the same size, the inner ring parts are required to be completely butted in the laminating process and cannot be dislocated, if the inner ring parts are dislocated, the cavity of the base is reduced, so that a quartz wafer is very easy to touch the ceramic side wall in the crystal processing process, and the defects are caused; because the whole size of the base is smaller and the material cost is saved, the size of the cavity is limited by the whole size, the sizes of the ceramic side wall and the Kovar ring are smaller and cannot be enlarged, and the hidden trouble of poor dislocation is easily generated in the laminating process. Taking a 1.6mm × 1.2mm base as an example, the ceramic side wall and the inner ring of the kovar ring have dimensions of about 1.3mm × 0.9mm, and the width of the kovar ring is about 0.25mm, so that stacking under such precise dimensions is likely to cause misalignment between the ceramic side wall and the kovar ring. If the dislocation is not wanted, the thickness of the ceramic side wall and the kovar ring is required to be increased, and the total thickness of the ceramic side wall and the kovar ring is about 0.14mm, so that the overall thickness of the ceramic base is increased, the quartz crystal cannot be made thinner and smaller, and the cost is increased.
Disclosure of Invention
The utility model provides a novel kovar cavity SMD quartz crystal ceramic base structure, the sealed hidden danger of the more production of its aim at solution current ceramic cavity structure middle level stack number of times, kovar ring and the range upon range of dislocation of ceramic boundary wall and the problem that base thickness can not increase provide a novel kovar cavity SMD quartz crystal ceramic base structure.
The technical solution of the utility model is as follows: a novel kovar cavity SMD quartz crystal ceramic base structure is characterized in that a kovar ring 4 and a ceramic substrate 1 are stacked together to form a novel kovar cavity ceramic base.
Its structure includes ceramic substrate 1.1 down, goes up ceramic substrate 1.2, outside metal side hole 3, kovar ring 4, ceramic substrate 1.1 and last ceramic substrate 1.2 are together constituteed ceramic substrate 1 down, and the upper and lower face of lower ceramic substrate 1.1 and last ceramic substrate 1.2 is printed respectively with the conductive metal circuit, and the conductive metal circuit passes through inside metal via hole and outside metal side hole 3 and connects, and kovar ring 4 and ceramic substrate 1 are together the ceramic base of constituteing novel kovar cavity together.
Still include some platform 5 of gluing, some platform 5 of gluing are located ceramic substrate 1.2 surfaces, and are an integer with last ceramic substrate 1.2, some 5 surface printing of platform have the metal level, and the metal level passes through inside metal via hole with the conductive metal route and is connected for some glue steps of quartz crystal manufacturing.
The lower ceramic substrate 1.1 and the upper ceramic substrate 1.2 are laminated together through a hot-pressing sintering process, and the Kovar ring 4 and the ceramic substrate 1 are laminated together through a hot-pressing sintering process.
The thickness of the kovar ring 4 is the total thickness of the ceramic side wall 2 and the kovar ring 4 in the conventional ceramic cavity base. Taking a base with the size of 1.6mm multiplied by 1.2mm as an example, the thickness of the ceramic side wall 2 of the existing ceramic cavity base is about 0.07mm, and the thickness of the kovar ring 4 is about 0.07 mm; and kovar ring 4 of kovar cavity base's thickness about 0.14mm, can attenuate to the arbitrary thickness in 0.07mm ~0.14mm under the condition that has the needs attenuate.
The utility model has the advantages that:
the kovar ring replaces the ceramic side wall, and the ceramic side wall component is removed to form a kovar cavity structure without increasing the overall thickness of the ceramic base; the hidden trouble of poor dislocation formed by the kovar ring and the ceramic side wall is removed; the number of times of lamination is reduced, and the incidence rate of the hidden trouble of poor sealing is reduced.
Drawings
FIG. 1 is a schematic diagram of an SMD quartz crystal ceramic base structure of a conventional ceramic chamber;
FIG. 2 is a schematic diagram of the misalignment between the kovar ring and the side wall of the base in the SMD quartz crystal ceramic base structure of the conventional ceramic chamber;
FIG. 3 is a schematic diagram of a novel Kovar cavity SMD quartz crystal ceramic base structure;
in fig. 1: 1 is a ceramic substrate, 1.1 is a lower ceramic substrate, 1.2 is an upper ceramic substrate, 2 is a ceramic side wall, 3 is an external metal side hole for connecting a conductive metal circuit, 4 is a kovar ring, 5 is a dispensing table, 6 is a central indication of the kovar ring 4, and 7 is a central indication of the ceramic side wall 2.
In fig. 2: 1 is a ceramic substrate, 1.1 is a lower ceramic substrate, 1.2 is an upper ceramic substrate, 2 is a ceramic side wall, 3 is an external metal side hole for connecting a conductive metal circuit, 4 is a kovar ring, 5 is a dispensing table, 6 is a central schematic of the kovar ring 4, and 7 is a central schematic of the ceramic substrate 1.
In fig. 3: 1 is a ceramic substrate, 1.1 is a lower ceramic substrate, 1.2 is an upper ceramic substrate, 3 is an external metal side hole for connecting a conductive metal circuit, 4 is a kovar ring, 5 is a dispensing table, and 6 is a central indication of the kovar ring 4.
Detailed Description
The technical scheme of the utility model is further explained by combining the attached drawings
As shown in fig. 1, when the kovar ring 4 and the ceramic side wall 2 are not dislocated, the center 6 of the kovar ring 4 is overlapped with the center 7 of the ceramic side wall 2, and the ceramic side wall 2 cannot be seen from the top; as shown in the attached figure 2, when the Kovar ring 4 is dislocated with the ceramic side wall 2, the center 6 of the Kovar ring 4 is dislocated with the center 7 of the ceramic substrate 1, the ceramic side wall 2 can be clearly seen through corrosion, and the cavity of the base is invisibly reduced.
As shown in fig. 3, the novel kovar cavity SMD quartz crystal ceramic base structure comprises a ceramic substrate 1, a lower ceramic substrate 1.1, an upper ceramic substrate 1.2, an external metal side hole 3 for connecting a conductive metal circuit, a kovar ring 4 and a dispensing table 5; the lower ceramic substrate 1.1 and the upper ceramic substrate 1.2 are laminated together through a hot-pressing sintering process to form the ceramic substrate 1, conductive metal lines are printed on the upper surface and the lower surface of the lower ceramic substrate 1.1 and the upper ceramic substrate 1.2, and the conductive metal lines are connected with the external metal side holes 3 through internal metal through holes. The thickness of kovar ring 4 is the gross thickness of ceramic boundary wall 2 and kovar ring 4 in the ceramic cavity base, and the ceramic base of kovar cavity structure does not increase ceramic base's whole thickness.
The dispensing table 5 and the upper ceramic substrate 1.2 are integrated, a metal layer is printed on the surface of the dispensing table 5, and the metal layer is connected with the conductive metal route through an internal metal through hole and used for a dispensing step in quartz crystal manufacturing.
Kovar ring 4 and ceramic substrate 1 are together laminated through hot pressing sintering technology, form Kovar cavity structures, constitute the utility model discloses a novel ceramic base of Kovar cavity.
Replacing the ceramic side wall 2 with a kovar ring 4, and removing components of the ceramic side wall 2 to form a kovar cavity structure; the ceramic side wall is replaced, the thickness of the whole ceramic base is not increased, and the hidden trouble of poor dislocation is eliminated; the number of laminations is reduced, and the incidence of the hidden danger of poor sealing is reduced.
Example 1
Take a 1.6mm × 1.2mm size pedestal as an example:
compared with the conventional ceramic cavity base shown in the attached drawing 1, the thickness of the lower ceramic substrate 1.1 is 0.065mm, the thickness of the upper ceramic substrate 1.2 is 0.065mm, the thickness of the ceramic substrate 1 is 0.13mm, the thickness of the ceramic side wall 2 is 0.07mm, the thickness of the kovar ring 4 is 0.07mm, and the total thickness of the base is 0.27 mm;
compared with the existing ceramic cavity base shown in the attached drawing 2, the components and the thickness of the base are the same as those of the base shown in the attached drawing 1, the Kovar ring 4 and the side wall 2 of the base are dislocated, the side wall 2 of the base is obviously exposed when viewed from top, and the area of the inner cavity of the base is obviously reduced, so that a quartz wafer is easily touched with the side wall of the ceramic during the crystal processing process, and the defects are easily caused;
compared with the attached figure 3, the kovar cavity base of the utility model has the advantages that the thickness of the ceramic substrate 1 is 0.13mm, the ceramic side wall 2 is removed, the thickness of the kovar ring 4 is increased, the kovar cavity structure is formed, the thickness of the kovar ring 4 reaches 0.14mm, the total thickness of the base is still 0.27mm, the total thickness of the base is not changed, and the bad production of stacking dislocation is avoided; the ceramic side wall 2 is removed, so that the once-laminated hot-pressed sintering is reduced, and the hidden trouble of poor sealing is reduced.
If the thickness of the quartz crystal component needs to be thinned, the thickness of the Kovar ring 4 can be thinned to any thickness of 0.07 mm-0.14 mm.
Example 2
Take a 2.0mm × 1.6mm size pedestal as an example:
compared with the conventional ceramic cavity base shown in the attached drawing 1, the thickness of the ceramic substrate 1 is 0.15mm, the thickness of the ceramic side wall 2 is 0.1mm, the thickness of the kovar ring 4 is 0.13mm, and the total thickness of the base is 0.38 mm;
compared with the existing ceramic cavity base shown in the attached drawing 2, the components and the thickness of the base are the same as those of the base shown in the attached drawing 1, the Kovar ring 4 and the side wall 2 of the base are dislocated, the side wall 2 of the base is obviously exposed when viewed from top, and the area of the inner cavity of the base is obviously reduced, so that a quartz wafer is easily touched with the side wall of the ceramic during the crystal processing process, and the defects are easily caused;
compared with the attached figure 3, the kovar cavity base of the utility model has the advantages that the thickness of the ceramic substrate 1 is 0.15mm, the ceramic side wall 2 is removed, the thickness of the kovar ring 4 is increased, the kovar cavity structure is formed, the thickness of the kovar ring 4 reaches 0.23mm, the total thickness of the base is still 0.38mm, the total thickness of the base is not changed, and the bad production of stacking dislocation is avoided; the ceramic side wall 2 is removed, so that the once-laminated hot-pressed sintering is reduced, and the hidden trouble of poor sealing is reduced.
If the thickness of the quartz crystal component needs to be thinned, the thickness of the Kovar ring 4 can be thinned to any thickness of 0.13 mm-0.23 mm.
Claims (3)
1. The utility model provides a novel kovar cavity SMD quartz crystal ceramic base structure, characterized by utilizes kovar ring (4) and ceramic substrate (1) to fold together and constitutes the ceramic base of novel kovar cavity, and its structure includes ceramic substrate (1.1) down, goes up ceramic substrate (1.2), outside metal side hole (3), kovar ring (4), ceramic substrate (1.1) is folded together with last ceramic substrate (1.2) down and is constituteed ceramic substrate (1), and the upper and lower face of ceramic substrate (1.1) and last ceramic substrate (1.2) is printed respectively with conductive metal circuit down, and conductive metal circuit passes through inside metal via hole and outside metal side hole (3) and connects, and kovar ring (4) and ceramic substrate (1) are folded together and are constituteed the ceramic base of novel kovar cavity.
2. The novel kovar cavity SMD quartz crystal ceramic base structure as claimed in claim 1, further comprising a dispensing table (5), said dispensing table (5) is disposed on the surface of the upper ceramic substrate (1.2) and is integrated with the upper ceramic substrate (1.2), said dispensing table (5) surface is printed with a metal layer, the metal layer and the conductive metal route are connected through internal metal via holes for dispensing step of quartz crystal manufacturing.
3. The new kovar cavity SMD quartz crystal ceramic base structure as claimed in claim 1, characterized in that said lower ceramic substrate (1.1) and upper ceramic substrate (1.2) are laminated together through hot pressing sintering process, and kovar ring (4) and ceramic substrate (1) are laminated together through hot pressing sintering process.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111049494A (en) * | 2019-11-21 | 2020-04-21 | 南京中电熊猫晶体科技有限公司 | A Novel Kovar Cavity SMD Quartz Crystal Ceramic Base Structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111049494A (en) * | 2019-11-21 | 2020-04-21 | 南京中电熊猫晶体科技有限公司 | A Novel Kovar Cavity SMD Quartz Crystal Ceramic Base Structure |
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Effective date of registration: 20230822 Address after: No.56 Xingang Avenue, Nanjing Economic and Technological Development Zone, Jiangsu Province, 210028 Patentee after: NANJING CHINA ELECTRONICS PANDA CRYSTAL TECHNOLOGY Corp. Patentee after: LANGFANG CHINA ELECTRONICS PANDA CRYSTAL TECHNOLOGY Corp. Address before: No.56 Xingang Avenue, Nanjing Economic and Technological Development Zone, Jiangsu Province, 210028 Patentee before: NANJING CHINA ELECTRONICS PANDA CRYSTAL TECHNOLOGY Corp. |