CN211428165U - High-heat-dissipation and high-reliability IGBT power module structure - Google Patents
High-heat-dissipation and high-reliability IGBT power module structure Download PDFInfo
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- CN211428165U CN211428165U CN202020467464.4U CN202020467464U CN211428165U CN 211428165 U CN211428165 U CN 211428165U CN 202020467464 U CN202020467464 U CN 202020467464U CN 211428165 U CN211428165 U CN 211428165U
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- power module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
The utility model provides a high heat dissipation, high reliability IGBT power module structure, comprising a base plate, be equipped with the shell on the bottom plate, in the shell be equipped with two DBC on the bottom plate, adopt copper bridge connection between the DBC, relative connection one end begins to arrange in proper order and is equipped with chip resistor, IGBT chip, FWD chip and terminal on the DBC, chip resistor pass through the aluminum wire with the grid bonding of IGBT chip, the projecting pole of IGBT chip with the anodal aluminum wire bonding that passes through of FWD chip, the terminal is in arrange and stretch out in proper order the equidistance on the DBC the shell. The utility model discloses higher thermal cycle ability, high power density and low stray inductance have.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor, concretely relates to high heat dissipation, high reliability IGBT power module structure.
Background
The DBCs of the traditional IGBT power module structure are connected through aluminum wires or aluminum strips, and the defects that different metals are welded after welding and have different thermal expansion coefficients, material fatigue and aging can occur after long-time work, the aluminum wires and the aluminum strips are easy to fall off, and the reliability problem exists.
In addition, the power density of the chip is higher and higher in the early IGBT module structure design, the rated voltage and the rated current are not improved by simply replacing the chip in the structure, and the current-carrying capacity of the terminal and the insulation and voltage resistance among the terminals have problems. When the IGBT power module is in a switching-on state, a loop between terminals is too long, and large stray inductance exists. The traditional terminal is not high in arrangement and bending efficiency, and the DBC layout design is inconvenient to produce.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a high heat dissipation, high reliability IGBT power module structure overcome above defect.
The utility model provides a following technical scheme:
the utility model provides a high heat dissipation, high reliability IGBT power module structure, includes the bottom plate, be equipped with the shell on the bottom plate, in the shell be equipped with two DBCs on the bottom plate, adopt copper connecting bridge to connect between the DBC, relative connection one end begins to arrange in proper order and is equipped with chip resistor, IGBT chip, FWD chip and terminal on the DBC, chip resistor pass through the aluminum wire with the grid bonding of IGBT chip, the projecting pole of IGBT chip with the anodal aluminum wire bonding that passes through of FWD chip, the terminal is in arrange and stretch out in proper order the equidistance on the DBC the shell.
Preferably, one end of the bottom plate is provided with a signal terminal, and the signal terminal extends out of the shell.
Preferably, the copper bridge is welded to the DBC by using solder.
The utility model has the advantages that: the two DBCs are connected through the copper connecting bridge, so that compared with the traditional aluminum wire bonding, the stability is high, and the copper connecting bridge has larger through-current capacity; the arrangement that the IGBT chips are close to the inside and the FWD chips are close to the outside is adopted, so that heat dissipation is faster, a current loop is reduced when the IGBT chips are switched on due to the arrangement, stray inductance of the loop is reduced, production efficiency is considered in DBC layout design, and SMT equipment is convenient to mount; the terminals are sequentially and equidistantly arranged, so that heat is uniformly distributed on the whole IGBT power device when the IGBT power device works, and the heat dissipation of the power device is facilitated; and the gate resistance is increased inside to eliminate gate oscillation to protect the gate of the IGBT chip.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of the present invention;
labeled as: 1. a base plate; 2. a housing; DBC; 4, an IGBT chip; 5, an FWD chip; 6. a chip resistor; 7. copper bridges; 8. a terminal; 9. a signal terminal; 10. and an aluminum wire.
Detailed Description
As shown in fig. 1, the IGBT power module structure with high heat dissipation and high reliability includes a bottom plate 1, a housing 2 is disposed on the bottom plate 1, a signal terminal 9 is disposed at one end of the bottom plate 1, and the signal terminal 9 extends out of the housing 2 for connecting an external signal. Two DBCs 3 are arranged on the bottom plate 1 in the shell 2, the DBCs 3 are connected through a copper connecting bridge 7, and the copper connecting bridge 7 is welded with the DBCs 3 through soldering tin. The opposite connection end on the DBC 3 is sequentially provided with a chip resistor 6, an IGBT chip 4, an FWD chip 5 and a terminal 8, the chip resistor 6 is bonded with the grid of the IGBT chip 4 through an aluminum wire 10, the emitter of the IGBT chip 4 is bonded with the anode of the FWD chip 5 through the aluminum wire 10, and the terminal 8 is sequentially arranged on the DBC 3 at equal intervals and extends out of the shell.
As shown in fig. 1, in the use process of the structure of the high-heat-dissipation and high-reliability IGBT power module structure, two DBCs are connected by using a copper bridge, and compared with the conventional aluminum wire bonding, because the copper bridge is welded by using a soldering tin, the stability is high, and the copper bridge has a larger through-current capacity; the arrangement that the IGBT chips 4 are close to the inside and the FWD chips 5 are close to the outside is adopted in the DBC 3 chip arrangement, so that the heat dissipation area of the IGBT chips 4 which mainly generate heat is larger, the heat dissipation is faster, and meanwhile, the arrangement also reduces a current loop when the circuit is switched on, reduces the stray inductance of the loop, and has the advantages of considering the production efficiency, facilitating the surface mounting of SMT equipment and greatly improving the production efficiency; each IGBT chip 4 grid is externally connected with a chip resistor 6 to eliminate grid oscillation to protect the IGBT chip 4 grid, and the IGBT chip has high reliability. Finally, the terminals 8 are arranged on the DBC 3 in sequence at equal intervals, the thickness of the terminals 8 can be increased, the width is increased, the current-carrying capacity is larger, the requirement of replacing a chip with higher rated voltage and current can be met under the condition that the original structure is not changed, namely, the width of the terminals is increased, the contact area connected with an external lead is increased, and the contact resistance is reduced;
although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (3)
1. The utility model provides a high heat dissipation, high reliability IGBT power module structure, a serial communication port, comprising a base plate, be equipped with the shell on the bottom plate, in the shell be equipped with two DBC on the bottom plate, adopt copper bridge to connect between the DBC, relative connection one end begins to arrange in proper order and is equipped with chip resistor, IGBT chip, FWD chip and terminal on the DBC, chip resistor pass through the aluminum wire with the gate bonding of IGBT chip, the projecting pole of IGBT chip with the anodal aluminum wire bonding that passes through of FWD chip, the terminal is in arrange and stretch out in proper order the equidistance on the DBC the shell.
2. The IGBT power module structure with high heat dissipation and high reliability of claim 1, wherein one end of the bottom plate is provided with a signal terminal, and the signal terminal extends out of the shell.
3. The IGBT power module structure with high heat dissipation and high reliability of claim 1, wherein the copper bridge is soldered to the DBC by using solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020467464.4U CN211428165U (en) | 2020-04-02 | 2020-04-02 | High-heat-dissipation and high-reliability IGBT power module structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020467464.4U CN211428165U (en) | 2020-04-02 | 2020-04-02 | High-heat-dissipation and high-reliability IGBT power module structure |
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| CN211428165U true CN211428165U (en) | 2020-09-04 |
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| CN202020467464.4U Active CN211428165U (en) | 2020-04-02 | 2020-04-02 | High-heat-dissipation and high-reliability IGBT power module structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540017A (en) * | 2021-06-30 | 2021-10-22 | 佛山市国星光电股份有限公司 | IGBT module packaging structure and manufacturing method thereof |
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2020
- 2020-04-02 CN CN202020467464.4U patent/CN211428165U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113540017A (en) * | 2021-06-30 | 2021-10-22 | 佛山市国星光电股份有限公司 | IGBT module packaging structure and manufacturing method thereof |
| CN113540017B (en) * | 2021-06-30 | 2024-04-09 | 佛山市国星光电股份有限公司 | IGBT module packaging structure and manufacturing method thereof |
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