CN211199388U - Semiconductor device - Google Patents
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- CN211199388U CN211199388U CN201921573735.8U CN201921573735U CN211199388U CN 211199388 U CN211199388 U CN 211199388U CN 201921573735 U CN201921573735 U CN 201921573735U CN 211199388 U CN211199388 U CN 211199388U
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Abstract
The utility model provides a semiconductor device, include: a growth chamber; a susceptor disposed within the growth chamber, the susceptor allowing placement of a substrate; the target is arranged in the growth cavity; the magnet is arranged at a position opposite to the target; wherein, the magnet comprises a plurality of magnetic units, and the magnet forms an arc-shaped magnetic field. The utility model provides a semiconductor can improve the homogeneity of coating film.
Description
Technical Field
The utility model relates to a semiconductor field, in particular to semiconductor equipment.
Background
With the continuous progress of the integrated circuit production technology, the integration level of the circuit chip is greatly improved. At present, the number of transistors integrated in a chip has reached a remarkable number of tens of millions, and signal integration of such a large number of active elements requires up to ten or more high-density metal interconnection layers for connection. Therefore, as an important process for preparing the metal interconnection layer, a Physical Vapor Deposition (PVD) technique is widely used.
The working principle of the magnetron sputtering equipment is as follows: electrons are accelerated to fly to the substrate under the action of an electric field, and collide with argon atoms in the process to ionize a large number of argon ions and electrons, so that a plasma region is formed between the target and the substrate. The argon ions accelerate to bombard the target under the action of the electric field, a large amount of target atoms or molecules are sputtered, and the neutral target atoms or molecules are deposited on the substrate to form a film. In order to form more argon ions to bombard the target to generate more target atoms or molecules, the collision rate of electrons with argon atoms needs to be increased. By utilizing the magnetic field formed near the target, electrons are influenced by the magnetic field Loran magnetic force, are bound in a plasma region close to the target and move around the target, the moving path of the electrons is increased, so that the collision rate of the electrons and argon atoms is improved, and a large amount of ionized argon ions can bombard more target atoms or molecules. However, the uniformity of the film after direct sputtering is poor, so that subsequent treatment is required in the next step of the process, the process is complicated, and the method is not suitable for production of large-size wafers.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned defects of the prior art, the present invention provides a semiconductor device to improve the uniformity of the coating film and simplify the operation process.
To achieve the above and other objects, the present invention provides a semiconductor device, including:
a growth chamber;
a susceptor disposed within the growth chamber, the susceptor allowing placement of a substrate;
the target is arranged in the growth cavity;
the magnet is arranged at a position opposite to the target;
wherein, the magnet comprises a plurality of magnetic units, and the magnet forms an arc-shaped magnetic field.
In one embodiment, the magnet includes a first portion, a second portion, and a plurality of third portions connected between the first portion and the second portion.
In one embodiment, both ends of the first portion are respectively connected to one end of the third portion, and the first portion includes a first magnetic unit.
In an embodiment, two ends of the second portion are respectively connected to the other end of the third portion, and the second portion includes a plurality of second magnetic units, a plurality of third magnetic units and a fourth magnetic unit.
In one embodiment, two ends of the fourth magnetic unit are connected to the plurality of third magnetic units, one end of the second magnetic unit is connected to the third magnetic unit, and the other end of the second magnetic unit is connected to the third portion.
In one embodiment, the plurality of third magnetic units and the fourth magnetic unit form a recess.
In one embodiment, the third portion comprises a plurality of magnetic cells connected in series.
In one embodiment, the slope of the plurality of magnetic units increases gradually.
In one embodiment, a semiconductor device includes:
a transport chamber, the growth chamber disposed on a sidewall of the transport chamber;
the preheating cavity is arranged on the side wall of the conveying cavity;
the cleaning cavity is arranged on the side wall of the conveying cavity;
the transition cavity is arranged on the side wall of the conveying cavity, the substrate enters the growth cavity through the transition cavity, and the substrate is deposited with a thin film in the growth cavity;
a susceptor disposed within the growth chamber, the susceptor allowing placement of a substrate;
the target is arranged in the growth cavity;
the magnet is arranged at a position opposite to the target and comprises a plurality of magnetic units, and the magnet forms an arc-shaped magnetic field.
The utility model provides a semiconductor device forms even arc magnetic field around the target through the magnet, has improved the utilization ratio and the sputtering homogeneity of sputter ion bombardment target, has guaranteed the deposit homogeneity of sputter ion, has improved the thickness homogeneity of coating film from this.
Drawings
FIG. 1: the present embodiment provides a schematic diagram of a growth chamber.
FIG. 2: a schematic diagram of the magnet in this embodiment.
FIG. 3: another schematic diagram of the magnet in this embodiment.
FIG. 4: another schematic diagram of the magnet in this embodiment.
FIG. 5: the present embodiment provides a schematic diagram of a semiconductor device.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the invention in a schematic manner, and only the components related to the invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
The following description sets forth numerous specific details, such as process chamber configurations and material systems, in order to provide a thorough understanding of embodiments of the present invention. It will be apparent to one skilled in the art that embodiments of the invention may be practiced without these specific details. In other instances, well-known features, such as specific diode configurations, are not described in detail so as not to obscure embodiments of the invention. In addition, it should be understood that the various embodiments shown in the figures are illustrative and not necessarily drawn to scale. Further, other arrangements and configurations may not be explicitly disclosed in the embodiments herein, but are nevertheless considered to be within the spirit and scope of the invention.
Referring to fig. 1, the present embodiment provides a semiconductor apparatus 100, the semiconductor apparatus 100 comprising a growth chamber 110, a susceptor 111, a target 123 and a magnet 122, the susceptor 111 being disposed within the growth chamber 110, the susceptor 111 being disposed at a bottom end of the growth chamber 110, the susceptor 111 being on a front surface of the susceptor 111 allowing for placement of a plurality of substrates 112, such as four or six or more or less substrates 112, in the present embodiment, a substrate 112 is disposed on the susceptor 111, in some embodiments, the diameter of the susceptor 111 ranges, such as 200mm to 800mm, such as 600mm, the susceptor 111 being formed of a plurality of materials, including silicon carbide or graphite coated with silicon carbide, in some embodiments, the susceptor 111 includes a silicon carbide material and has a surface area of 2000 square centimeters or more, such as 5000 square centimeters or more, such as 6000 square centimeters or more, in this embodiment, the substrate 112 may include sapphire, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper and/or aluminum nitride, and the substrate 112 may also be connected to a glass substrate growth process drive unit, such as a thermal drive unit, and a drive unit, such as a drive unit, which may be set to a thermal expansion drive unit, such as a drive unit, which may be capable of increasing or a drive unit for increasing a drive temperature, such as a drive unit, and a drive unit, such as a drive unit, which may be used to increase or a drive a temperature, which may be used to increase or a temperature, and may be used to a temperature, or a temperature, and may be used to increase, or may be used to a temperature, or to a temperature, or to increase, or to a temperature.
It is worth noting that in some embodiments, the semiconductor apparatus 100 may also include, for example, a load lock chamber, a load lock cassette, and optionally additional MOCVD reaction chambers (not shown) for a number of applications.
In some embodiments, the substrate is selected from the group consisting of, but not limited to, sapphire, SiC, Si, diamond, L iAlO2ZnO, W, Cu, GaN, AlGaN, AlN, soda lime/high silica glass, a substrate having a matched lattice constant and coefficient of thermal expansion, and a phase of nitride material grown on the substrateSubstrates that are either treated (engineered) according to the nitride material grown on the substrate, thermally and chemically stable at the required nitride growth temperature, and unpatterned or patterned substrates. In some embodiments, the target material is selected from the group consisting of, but not limited to, Al-containing metals, alloys, and compounds, such as Al, AlN, algal, Al2O3And the target may be doped with group II/IV/VI elements to improve layer compatibility and device performance. In one embodiment, the sputtering process gas may include, but is not limited to, for example, N2、NH3、NO2Nitrogen-containing gas such as NO, and inert gas such as Ar, Ne, Kr, etc.
In some embodiments, the semiconductor devices of the present embodiments may relate to devices and methods for forming high quality buffer layers and III-V layers that may be used to form possible semiconductor components, such as radio frequency components, power components, or other possible components.
Referring to fig. 1, in the present embodiment, the target 123 is disposed on the top of the growth chamber 110, the target 123 is electrically connected to a sputtering power source (not shown), and during the magnetron sputtering process, the sputtering power source outputs sputtering power to the target 123, so that the plasma formed in the growth chamber 110 etches the target 123, and the sputtering power source may include a dc power source, an intermediate frequency power source, or a radio frequency power source. The target 123 has at least one surface portion composed of a material to be sputter deposited on the substrate 112 disposed on the susceptor 111. In some embodiments, when forming an aluminum nitride film, for example, an AlN-containing buffer layer may be formed using a substantially pure aluminum target that is sputtered using a plasma including an inert gas (e.g., argon) and a nitrogen-containing gas. In some embodiments, after loading one or more substrates 112 in preparation for epitaxy into the growth chamber 110, a continuous AlN film is deposited on the substrates 112 by using an aluminum-containing target and a nitrogen-containing process gas. In some embodiments, the target 123 may be formed from a material selected from, but not limited to, the group of: substantially pure aluminum, aluminum-containing alloys, aluminum-containing compounds (e.g. AlN, AlGaN, Al)2O3) And is doped withGroup II/IV/VI elements to improve layer compatibility and device performance. The process gas used during the sputtering process may include, but is not limited to, nitrogen-containing gases such as nitrogen (N) and inert gases2) Ammonia (NH)3) Nitrogen dioxide (NO)2) Nitrogen Oxide (NO), etc., inert gases such as argon (Ar), neon (Ne), krypton (Kr), etc. In some embodiments, dopant atoms may be added to the deposited thin film by doping the target material and/or delivering a dopant gas to the generated sputtering plasma to adjust the electrical, mechanical, and optical properties of the deposited PVD AlN buffer layer, e.g., to make the thin film suitable for fabricating III-nitride devices thereon. In some embodiments, the thin film (e.g., AlN buffer layer) formed within growth chamber 110 has a thickness between 0.1-1000 nanometers.
Referring to fig. 1, in the present embodiment, the magnet 122 is located above the target 123, and the magnet 122 rotates around the central axis of the target 123, for example, the magnet 122 rotates around the central axis of the target 123 by 90 °, 180 °, or 360 °, or the magnet 122 may rotate around the central axis of the target 123 by any angle. In this embodiment, the magnet 122 is connected to a driving mechanism, and the driving mechanism drives the magnet 122 to rotate and simultaneously reciprocate up and down. The driving mechanism includes a first motor 114, a transmission rod 115, a second motor 116 and a lifting assembly. The first motor 114 is connected to the second motor 116 through a transmission rod 115, the first motor 114 is, for example, a servo motor or a stepping motor, the transmission rod 115 is, for example, a lead screw, and the second motor 116 is, for example, a rotary servo motor, so that the first motor 114 can drive the second motor 116 to reciprocate up and down through the transmission rod 115, and the first motor 114 drives the transmission rod 115 to rotate forward or backward to enable the second motor 116 to reciprocate. In this embodiment, the lifting assembly comprises an outer shaft 118 and an inner shaft 119, the inner shaft 119 being arranged inside the outer shaft 118, the inner shaft 119 being allowed to move along the outer shaft 118, while the outer shaft 118 is arranged on the growth chamber 110, a part of the inner shaft 119 being arranged inside the growth chamber 110, a fixing means 121 being arranged at one end of the inner shaft 119, by means of which fixing means 121 the magnet 122 is fixed at one end of the inner shaft 119, and a sealing means 120 being arranged around the outer shaft 118 in contact with the growth chamber 110, by means of which sealing means 120 a vacuum seal is achieved, the sealing means 120 being for example a sealing ring. In this embodiment, the second motor 116 is connected to the inner shaft 119 through an output shaft 117, the output shaft 117 is partially located in the outer shaft 118, the second motor 116 can drive the inner shaft 119 to rotate through the output shaft 117, and the first motor 114 drives the second motor 116 to reciprocate up and down through the transmission rod 115, so that when the first motor 114 and the second motor 116 are simultaneously turned on, the inner shaft 119 can reciprocate up and down and also rotate, thereby driving the magnet 122 on the inner shaft 119 to move correspondingly. The inner shaft 119 may only reciprocate up and down when the first motor 114 is turned on and the second motor 116 is turned off. The inner shaft 119 may only perform rotational movement when the first motor 114 is turned off and the second motor 116 is turned on. Whereby the operator may choose to turn the first motor 114 and/or the second motor 116 on and/or off depending on the implementation.
Referring to fig. 2, in the present embodiment, the magnet 122 includes a first portion, a second portion and a plurality of third portions connected between the first portion and the second portion. The first portion includes a first magnetic unit 1221, the second portion includes a second magnetic unit 1222, a third magnetic unit 1223, and a fourth magnetic unit 1224, and the third portion includes a fifth magnetic unit 1225, a sixth magnetic unit 1226, and a seventh magnetic unit 1227. In the present embodiment, both ends of the first portion are respectively connected to one end of the third portion, specifically, both ends of the first magnetic unit 1221 are connected to the third portion, and more specifically, both ends of the first magnetic unit 1221 are respectively connected to the fifth magnetic unit 1225. Both ends of the second portion are connected to the other ends of the third portion, respectively, wherein both ends of the fourth magnetic unit 1224 of the second portion are connected to one end of the third magnetic unit 1223, the other end of the third magnetic unit 1223 is connected to the second magnetic unit 1222, and the third magnetic unit 1223 is obliquely disposed between the second magnetic unit 1222 and the fourth magnetic unit 1224, such that the fourth magnetic unit 1224 is inwardly recessed to form a recess. It should be noted that the second portion may be a symmetrical structure, i.e., the second magnetic unit 1222, the third magnetic unit 1223 is symmetrical about the center of the fourth magnetic unit 1224, and further, the length of the second portion is greater than that of the first portion. The third portion includes a fifth magnetic unit 1225, a sixth magnetic unit 1226, and a seventh magnetic unit 1227, which are sequentially connected, the fifth magnetic unit 1225 is further connected to the first magnetic unit 1221, and the seventh magnetic unit 1227 is further connected to the second magnetic unit 1222. Meanwhile, the slopes of the fifth magnetic unit 1225, the sixth magnetic unit 1226, and the seventh magnetic unit 1227 are sequentially increased, that is, the slope of the seventh magnetic unit 1227 is greater than the slope of the sixth magnetic unit 1226, and the slope of the sixth magnetic unit 1226 is greater than the slope of the fifth magnetic unit 1225. In the present embodiment, a plurality of magnetic units are spliced to form a symmetrical annular magnet 122, so that an arc-shaped magnetic field can be formed when the magnet 122 is stationary, and a uniform magnetic field can be formed when the magnet 122 rotates around the target 123. The uniform magnetic field can provide sputtering uniformity of the target material, thereby realizing the uniformity of the coating.
Referring to fig. 3, in some embodiments, the magnet 122 may also have an arc-shaped structure, the magnet 122 includes a first magnetic unit 1221, a second magnetic unit 1222 and a plurality of third magnetic units 1223, the first magnetic unit 1221 is connected to the second magnetic unit 1222 through the third magnetic unit 1223, wherein the first magnetic unit 1221 and the second magnetic unit 1222 have an arc shape, the first magnetic unit 1221 and the second magnetic unit 1222 have the same arc-shaped structure, and the third magnetic unit 1223 is connected between the first magnetic unit 1221 and the second magnetic unit 1222 and is symmetrical to a central axis of the first magnetic unit 1221 and the second magnetic unit 1222. An arc-shaped magnetic field may be formed when the magnet 122 is stationary, and a uniform magnetic field may be formed when the magnet 122 rotates around the target 1223. The uniform magnetic field can provide sputtering uniformity of the target material, thereby realizing the uniformity of the coating.
Referring to fig. 4, in some embodiments, the magnet 122 may also have an approximately rectangular structure, the magnet 122 includes a plurality of first magnetic units 1221 disposed opposite to each other and a plurality of second magnetic units 1222 disposed opposite to each other, wherein the first magnetic units 1221 are connected to the second magnetic units 1222, the first magnetic units 1221 may have an arc-shaped structure, the first magnetic units 1221 may be recessed inward or outward, the plurality of first magnetic units 1221 may also have an arc-shaped structure recessed inward or outward at the same time, and the plurality of first magnetic units 1221 may also have different arc-shaped structures. The magnet 122 may be of a symmetrical or asymmetrical configuration, and may form an arcuate magnetic field when the magnet 122 is stationary, and a uniform magnetic field when the magnet 122 rotates about the target 123. The uniform magnetic field can provide sputtering uniformity of the target material, thereby realizing the uniformity of the coating.
Referring to fig. 1, in the present embodiment, the growth chamber 110 includes at least one gas inlet connected to an external gas source 124, the external gas source 124 feeds gas into the growth chamber 110 through the gas inlet, and the external gas source 124 feeds nitrogen-containing gas such as nitrogen (N) into the growth chamber 100 through the gas inlet2) Ammonia (NH)3) Nitrogen dioxide (NO)2) Nitrogen Oxide (NO), etc., inert gases such as argon (Ar), neon (Ne), krypton (Kr), etc. The growth chamber 110 includes at least one pumping port, which is connected to a vacuum pump 125, and the vacuum pump 125 pumps the growth chamber 110 through the pumping port.
Referring to fig. 5, the present embodiment further provides a semiconductor apparatus 300, wherein the semiconductor apparatus 300 includes a transfer chamber 310, a transition chamber 320, a cleaning chamber 330, a preheating chamber 340 and a plurality of growth chambers 350. The transition chamber 320, the cleaning chamber 330, the preheating chamber 340 and the plurality of growth chambers 350 are disposed on the sidewalls of the transfer chamber 310, respectively.
Referring to fig. 5, in some embodiments, the semiconductor apparatus 300 further includes a manufacturing interface 313, and a cassette containing a substrate to be processed and a substrate handling robot (not shown) may be included in the manufacturing interface 313 to load the substrate in the cassette into the transition chamber 320, and in particular, to place the substrate on a tray of a stage. The substrate handling robot in the manufacturing interface 313 transfers the substrate into the transition chamber 320, then the substrate handling robot 311 in the transfer chamber 310 transfers the substrate into the transfer chamber 310 through the slit valve 312, and then sequentially transfers the substrate into the cleaning chamber 330, the preheating chamber 340, and the growth chamber 350. After a thin film is formed on the surface of the substrate, the substrate handling robot 311 transfers the substrate into the transition chamber 320 and the substrate is removed by the substrate handling robot in the manufacturing interface 313.
In some embodiments, appropriate control of the multi-chamber processing platform may be provided by a controller. The controller may be one of any form of general purpose data processing system that can be used in an industrial setting to control various sub-processors and sub-controllers. Typically, the controller includes a Central Processing Unit (CPU) that communicates with memory and input/output (I/O) circuitry among other common elements. As an example, the controller may perform or otherwise initiate one or more of the operations of any of the methods/processes described herein. Any computer program code that performs and/or initiates these operations may be embodied as a computer program product. Each of the computer program products described herein may be executed from a computer readable medium (e.g., a floppy disk, a compact disk, a DVD, a hard drive, a random access memory, etc.).
To sum up, the utility model provides a semiconductor device through forming even arc magnetic field in the growth cavity, can improve the sputter utilization ratio of target from this to effectively improve the homogeneity of coating film.
The above description is only a preferred embodiment of the present application and the explanation of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above technical features (but not limited to) having similar functions disclosed in the present application.
Besides the technical features described in the specification, other technical features are known to those skilled in the art, and further description of the other technical features is omitted here in order to highlight the innovative features of the present invention.
Claims (9)
1. A semiconductor device, comprising:
a growth chamber;
a susceptor disposed within the growth chamber, the susceptor allowing placement of a substrate;
the target is arranged in the growth cavity;
the magnet is arranged at a position opposite to the target;
wherein, the magnet comprises a plurality of magnetic units, and the magnet forms an arc-shaped magnetic field.
2. The semiconductor device according to claim 1, wherein: the magnet includes a first portion, a second portion, and a plurality of third portions connected between the first portion and the second portion.
3. The semiconductor device according to claim 2, wherein: the two ends of the first part are respectively connected with one end of the third part, and the first part comprises a first magnetic unit.
4. The semiconductor device according to claim 2, wherein: the two ends of the second part are respectively connected to the other end of the third part, and the second part comprises a plurality of second magnetic units, a plurality of third magnetic units and a fourth magnetic unit.
5. The semiconductor device according to claim 4, wherein: and two ends of the fourth magnetic unit are connected with the plurality of third magnetic units, one end of the second magnetic unit is connected with the third magnetic units, and the other end of the second magnetic unit is connected with the third part.
6. The semiconductor device according to claim 5, wherein: the plurality of third magnetic units and the fourth magnetic unit form a concave part.
7. The semiconductor device according to claim 6, wherein: the third portion includes a plurality of magnetic units connected in series.
8. The semiconductor device according to claim 7, wherein: the slopes of the plurality of magnetic units are gradually increased.
9. The semiconductor device according to claim 1, further comprising:
a transport chamber, the growth chamber disposed on a sidewall of the transport chamber;
the preheating cavity is arranged on the side wall of the conveying cavity;
the cleaning cavity is arranged on the side wall of the conveying cavity;
the transition cavity is arranged on the side wall of the conveying cavity, the substrate enters the growth cavity through the transition cavity, and the substrate is used for depositing films in the growth cavity.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921573735.8U CN211199388U (en) | 2019-09-20 | 2019-09-20 | Semiconductor device |
| PCT/CN2020/116480 WO2021052497A1 (en) | 2019-09-20 | 2020-09-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921573735.8U CN211199388U (en) | 2019-09-20 | 2019-09-20 | Semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN211199388U true CN211199388U (en) | 2020-08-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201921573735.8U Active CN211199388U (en) | 2019-09-20 | 2019-09-20 | Semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110643962A (en) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | a semiconductor device |
| WO2021052497A1 (en) * | 2019-09-20 | 2021-03-25 | 深圳市晶相技术有限公司 | Semiconductor device |
-
2019
- 2019-09-20 CN CN201921573735.8U patent/CN211199388U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110643962A (en) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | a semiconductor device |
| WO2021052497A1 (en) * | 2019-09-20 | 2021-03-25 | 深圳市晶相技术有限公司 | Semiconductor device |
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Effective date of registration: 20210207 Address after: 518000 s1704, building 17, merchants Garden City, Liuhe community, Pingshan street, Pingshan District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN JINGXIANG TECHNOLOGY Co.,Ltd. Patentee after: Suzhou Chenhua Semiconductor Technology Co.,Ltd. Address before: 518000 s1704, building 17, merchants Garden City, Liuhe community, Pingshan street, Pingshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN JINGXIANG TECHNOLOGY Co.,Ltd. |
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