CN211147907U - Silicon micromechanical resonance pressure sensor based on MEMS technology - Google Patents
Silicon micromechanical resonance pressure sensor based on MEMS technology Download PDFInfo
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- CN211147907U CN211147907U CN201922407584.5U CN201922407584U CN211147907U CN 211147907 U CN211147907 U CN 211147907U CN 201922407584 U CN201922407584 U CN 201922407584U CN 211147907 U CN211147907 U CN 211147907U
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- pressure sensor
- pressure sensing
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- 238000005516 engineering process Methods 0.000 title claims description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- 239000000835 fiber Substances 0.000 claims abstract description 10
- 239000013307 optical fiber Substances 0.000 claims description 31
- 239000000919 ceramic Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 15
- 238000009530 blood pressure measurement Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000008859 change Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006903 response to temperature Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 241000463219 Epitheca Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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Abstract
The utility model discloses a silicon micromechanical resonance pressure sensor based on MEMS technique, including chip and optic fibre, one side of chip is equipped with the optical measurement chamber, the opposite side of chip is equipped with the pressure sensing chamber, the optical measurement chamber with establish to the pressure sensing piece between the pressure sensing chamber, be equipped with the microbridge resonance piece on the pressure sensing piece, stagger in optical measurement chamber bottom the region of pressure sensing piece is equipped with little cantilever resonance piece, optic fibre is equipped with two, and one of them optic fibre is aimed at little bridge resonance piece sets up, and another optic fibre is aimed at little cantilever resonance piece sets up. The utility model discloses can effectively eliminate because ambient temperature enlarges its application scope to the influence of pressure measurement precision.
Description
Technical Field
The utility model discloses a silicon micromechanical resonance pressure sensor based on MEMS technique belongs to the pressure sensor field.
Background
The silicon micromechanical resonance pressure sensor based on MEMS technology is the silicon micro pressure sensor with highest precision at present, and indirectly measures pressure by detecting the natural frequency of an object, and outputs the pressure as a quasi-digital signal. The precision of the pressure sensor is mainly influenced by the mechanical characteristics of the structure, so that the pressure sensor has strong anti-interference capability and stable performance. In addition, the silicon micromechanical resonance pressure sensor also has the advantages of fast response, wide frequency band, compact structure, low power consumption, small volume, light weight, mass production and the like, and is always the key point of research and development in various countries.
MEMS is a short term for Micro electric Mechanical Systems, which is also referred to herein as Micro-electromechanical Systems, and sometimes as Micro-machines, Micro-Systems, or Micro-electro-Mechanical Systems. Silicon micromechanical resonant pressure sensors are one of the earliest commercial products of MEMS and have been on the past for over forty years.
The silicon micromechanical resonance pressure sensor based on the MEMS technology is widely applied to the industries of aerospace, ocean exploration, petrochemical industry and the like due to the characteristics of high precision and excellent performances. In recent years, the demand for high-temperature-resistant pressure sensors in the fields of aerospace, petrochemical industry and the like is increasingly urgent, and high-performance and miniaturized high-temperature-resistant pressure sensors become one of the hot spots of current international research.
At present, because the cross-sensitivity of temperature is relatively high, especially in an ultra-high temperature environment, the measurement accuracy of such a silicon micromechanical resonant pressure sensor based on the MEMS technology is greatly affected, and therefore, improvements are urgently needed to expand the application range thereof.
SUMMERY OF THE UTILITY MODEL
The utility model provides a silicon micromechanical resonance pressure sensor based on MEMS technique effectively eliminates because ambient temperature enlarges its application scope to the influence of pressure measurement precision.
An aspect of the utility model relates to a silicon micromechanical resonance pressure sensor based on MEMS technique, including chip and optic fibre, one side of chip is equipped with the optical cavity, the opposite side of chip is equipped with the pressure sensing chamber, the optical cavity with establish to the pressure sensing piece between the pressure sensing chamber, be equipped with the microbridge resonance piece on the pressure sensing piece, stagger optical cavity bottom the region of pressure sensing piece is equipped with the microcantilever resonance piece, optic fibre is equipped with two, and two the one end of optic fibre all faces the optical cavity, the other end are all kept away from the optical cavity sets up, and one of them optic fibre is aimed at the microbridge resonance piece sets up, and another optic fibre is aimed at the microcantilever resonance piece sets up.
Furthermore, the microbridge resonant chip and the microcantilever resonant chip are made of the same material and have the same thickness.
Further, the optical fiber pressure sensing device further comprises a shell, the chip is arranged in the shell, one end of the optical fiber is located in the shell, the other end of the optical fiber is located outside the shell, and an air hole which is communicated with the shell and the pressure sensing cavity is formed in the shell.
Furthermore, the shell comprises an upper shell and a lower shell, the upper shell is arranged on the lower shell, one side of the chip, which is provided with the optical measurement cavity, is attached to the upper end of the lower shell, the lower part of the upper shell is provided with an accommodating cavity, and the chip is arranged in the accommodating cavity.
Further, the air hole is arranged in the upper shell, the air hole penetrates through the accommodating cavity, and gaps are formed between the chip and the inner wall of the accommodating cavity and between the chip and the inner wall of the top side of the accommodating cavity.
Further, the upper shell is a ceramic upper shell, the lower shell is a ceramic lower shell, and the ceramic upper shell and the ceramic lower shell are bonded by high-temperature ceramic glue.
Further, the optical measurement cavity is a vacuum cavity.
The chip is provided with the optical measurement cavity, and the bottom plate is covered on one side of the chip, where the optical measurement cavity is arranged, and used for sealing the optical measurement cavity.
Further, the chip is a silicon wafer.
Further, the optical fiber is a sapphire optical fiber.
The utility model discloses following beneficial effect has been brought: the utility model discloses a pressure sensor is equipped with the microbridge resonance piece and the little cantilever resonance piece on the chip, and both can synchronous response to temperature variation. By the data fusion technology, the resonance frequency of the micro-cantilever resonance plate serving as the temperature-sensitive element compensates the influence of temperature change on the resonance frequency of the micro-bridge resonance plate in real time, the influence of the environmental temperature on the pressure measurement precision is effectively eliminated, and the application range of the micro-bridge resonance plate is expanded.
Drawings
Fig. 1 is a schematic structural diagram of a chip and an optical fiber of a pressure sensor according to the present invention;
Fig. 2 is a perspective view of the chip according to the present invention in one direction;
Fig. 3 is a perspective view of the chip according to the present invention in another direction;
Fig. 4 is a perspective view of the pressure sensor of the present invention without a bottom plate;
Fig. 5 is a perspective view of the pressure sensor with additional bottom plate according to the present invention.
In the figure:
1-chip;
2-optical cavity;
3-a pressure sensing cavity;
4-feeling tabletting;
5-microbridge resonant chip;
6-micro cantilever resonant chip;
7-an optical fiber;
8-a lower shell;
9-upper shell;
10-air holes;
11-a containment chamber;
12-bottom plate.
Detailed Description
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
Examples
Referring to fig. 1-5, the present embodiment discloses a silicon micromechanical resonant pressure sensor based on MEMS technology, which includes a chip 1 and an optical fiber 7, where the optical fiber 7 is used for transmitting an incident light beam to the chip 1.
In a preferred embodiment of the present invention, the present invention may further include a housing, and the chip 1 is disposed in the housing. Specifically, the housing may include an upper case 9 and a lower case 8, and the upper case 9 covers the lower case 8.
The chip comprises a chip 1 and is characterized in that a light measuring cavity 2 is arranged on one side of the chip 1, a pressure sensing cavity 3 is arranged on the other side of the chip, a pressure sensing sheet 4 is arranged between the light measuring cavity 2 and the pressure sensing cavity 3, a micro-bridge resonant sheet 5 is arranged on the pressure sensing sheet 4, and a micro-cantilever resonant sheet 6 is arranged at the bottom of the light measuring cavity 2 and is staggered with the pressure sensing sheet 4. One side of the chip 1, which is provided with the optical measurement cavity 2, is attached to the upper end of the lower shell 8, the lower end of the upper shell 9 is provided with an accommodating cavity 11 corresponding to the position of the chip 1, and the chip 1 is arranged in the accommodating cavity 11.
The optical fibers 7 are arranged in two numbers, one end of each optical fiber is towards the optical cavity 2, the other end of each optical fiber is far away from the optical cavity 2, one optical fiber 7 is aligned with the microbridge resonator plate 5, and the other optical fiber 7 is aligned with the microcantilever resonator plate 6.
In this embodiment, the optical fiber 7 is a sapphire optical fiber 7, and both the optical fibers 7 are disposed on the lower case 8, and one end of the optical fiber, which is far from the optical cavity 2, extends out of the lower case 8.
The optical cavity 2 is a vacuum cavity. In one embodiment, the chip 1 is connected to the upper end of the lower shell 8 by sealing, and the lower side of the optical measurement cavity 2 is sealed by the upper end face of the lower shell 8, so that the requirements for the sealing connection between the chip 1 and the lower shell 8 and the connection between the optical fiber 7 and the lower shell 8 are higher, and the vacuum degree of the optical measurement cavity 2 can be ensured. In another embodiment, a bottom plate 12 may be added, and the bottom plate 12 is disposed on the side of the chip 1 where the optical cavity 2 is disposed to cover the optical cavity 2. The bottom of the chip 1 is covered by a bottom plate 12 to seal the optical cavity 2, and the bottom plate 12 is made of the same material as the chip 1, so that the vacuum degree of the optical cavity 2 can be ensured.
The lower end of the upper shell 9 is provided with an accommodating cavity 11 corresponding to the arrangement position of the chip 1, and the chip 1 is arranged in the accommodating cavity 11. Be equipped with on the casing communicate the casing outside with the gas pocket 10 in pressure sensing chamber 3, it is specific gas pocket 10 is located on the epitheca 9, and the inner of gas pocket 10 link up hold the chamber 11, chip 1 is in hold chamber 11 and hold all leave the clearance all around and the top side in chamber 11. The first gap is convenient for the chip 1 to be easily arranged in the accommodating cavity 11 during installation; the gap communicates with the air hole 10 and the pressure sensing chamber 3, and the pressure sensing chamber 3 communicates with the outside of the housing.
The ceramic shell comprises an upper shell 9, a lower shell 8 and a ceramic lower shell 8, wherein the upper shell 9 is a ceramic upper shell 9, and the ceramic upper shell 9 and the ceramic lower shell 8 are bonded by high-temperature ceramic glue.
The chip 1 is made of a silicon chip, and the microbridge resonator plate 5 and the microcantilever resonator plate 6 are made of the same material and have the same thickness. In this embodiment, the chip 1 is a monolithic silicon chip, and the optical cavity 2, the pressure sensing cavity 3, the microbridge resonator plate 5, and the microcantilever resonator plate 6 are obtained by machining.
When the micro-bridge resonance plate is used, the measured target gas enters the pressure sensing cavity 3 from the air hole 10, so that the pressure sensing plate 4 is sensitive to the measured pressure to generate corresponding deformation, and the micro-bridge resonance plate 5 is arranged on the pressure sensing plate 4 to directly sense the deformation of the pressure sensing plate 4, so that the self resonance frequency is changed. The micro-cantilever resonant chip 6 is arranged at the bottom of the optical measurement cavity 2 and is not influenced by the measured pressure, so that the measured pressure has no influence on the resonant frequency of the optical measurement cavity. Meanwhile, the temperature of the measuring environment affects the resonant frequency of the micro-bridge resonant chip 5 and the micro-cantilever resonant chip 6, and the micro-bridge resonant chip 5 and the micro-cantilever resonant chip 6 are made of the same material, have the same or similar thickness and have the same manufacturing process, so that the micro-bridge resonant chip and the micro-cantilever resonant chip can synchronously respond to the temperature change and have the same effect on the temperature.
Therefore, the resonant frequency of the micro-bridge resonant chip 5 is affected by the measured pressure and the ambient temperature at the same time; the resonance frequency of the micro-cantilever resonance plate 6 is not affected by the measured pressure, the resonance frequency is only affected by the ambient temperature, and the resonance frequency of the micro-bridge resonance plate 5 and the resonance frequency of the micro-cantilever resonance plate 6 are differentiated, so that the change of the resonance frequency of the micro-bridge resonance plate 5 caused by the ambient temperature can be eliminated, and the measurement precision and the stability of the sensor are improved.
The incident light beam is emitted into the sensor chip 1 through the optical fiber 7 and then is emitted onto the vibrating resonant chip, wherein the incident light beam emitted by the optical fiber 7 aligned with the micro-bridge resonant chip 5 is emitted onto the micro-bridge resonant chip 5, and the incident light beam emitted by the optical fiber 7 aligned with the micro-cantilever resonant chip 6 is emitted onto the micro-cantilever resonant chip 6. The incident light beam is reflected and refracted on the resonance plate, the reflected and refracted light beams have the same frequency, and when the resonance plate resonates, the phase difference between the reflected and refracted light beams of the incident light beam before and after the vibration change of the resonance plate can be measured. The phase difference of reflected light and refracted light on the micro-bridge resonant chip 5 and the micro-cantilever resonant chip 6 is respectively measured by utilizing the principle, and then the external pressure value P is calculated by utilizing a compensation mechanism.
To sum up, the utility model discloses a pressure sensor is equipped with microbridge resonance piece 5 and little cantilever resonance piece 6 on chip 1, both can synchronous response to temperature variation. By the data fusion technology, the resonance frequency of the micro-cantilever resonance plate 6 serving as a temperature-sensitive element compensates the influence of temperature change on the resonance frequency of the micro-bridge resonance plate 5 in real time, the influence of the environmental temperature on the pressure measurement precision is effectively eliminated, and the application range of the micro-bridge resonance plate is expanded.
While the preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the appended claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the invention. It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. The silicon micromechanical resonance pressure sensor based on the MEMS technology is characterized by comprising a chip and optical fibers, wherein a light measuring cavity is arranged on one side of the chip, a pressure sensing cavity is arranged on the other side of the chip, a pressure sensing sheet is arranged between the light measuring cavity and the pressure sensing cavity, a micro-bridge resonance sheet is arranged on the pressure sensing sheet, a micro-cantilever resonance sheet is arranged in the region where the bottom of the light measuring cavity is staggered with the pressure sensing sheet, the optical fibers are arranged in two numbers, one end of each optical fiber faces the light measuring cavity, the other end of each optical fiber is far away from the light measuring cavity, one optical fiber is aligned with the micro-bridge resonance sheet, and the other optical fiber is aligned with the micro-cantilever resonance sheet.
2. A MEMS-based silicon-micromachined resonant pressure sensor as defined in claim 1, wherein the microbridge resonator plate and the microcantilever resonator plate are fabricated from the same material and have the same thickness.
3. The silicon-micromachined resonant pressure sensor based on MEMS technology as claimed in claim 2, further comprising a housing, wherein the chip is disposed in the housing, one end of the optical fiber is located in the housing, the other end of the optical fiber is located outside the housing, and the housing is provided with an air hole communicating the outside of the housing and the pressure sensing cavity.
4. A MEMS technology based silicon micromechanical resonant pressure sensor as claimed in claim 3, characterized in that the housing comprises an upper shell and a lower shell, the upper shell is placed on the lower shell, the side of the chip provided with the optical cavity abuts on the upper end of the lower shell, the lower part of the upper shell is provided with a receiving cavity, and the chip is arranged in the receiving cavity.
5. The MEMS technology based silicon micromechanical resonant pressure sensor as claimed in claim 4, wherein the air hole is disposed in the upper case, the air hole penetrates through the accommodating cavity, and gaps are disposed between the chip and the peripheral inner wall and the top inner wall of the accommodating cavity.
6. The MEMS technology based silicon micromechanical resonant pressure sensor according to claim 4, wherein the upper case is a ceramic upper case, the lower case is a ceramic lower case, and the ceramic upper case and the ceramic lower case are bonded by high temperature ceramic glue.
7. A MEMS technology based silicon micromechanical resonant pressure sensor as claimed in claim 1, characterized in that the optical cavity is provided as a vacuum cavity.
8. A MEMS technology based silicon micromechanical resonant pressure sensor according to claim 7, further comprising a bottom plate covering the side of the chip where the optical cavity is located for covering the optical cavity.
9. A silicon micromechanical resonant pressure sensor based on MEMS technology as claimed in claim 1, characterized in that the chip is a silicon wafer.
10. A MEMS technology based silicon micromachined resonant pressure sensor as defined in claim 1 wherein said optical fiber is a sapphire fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922407584.5U CN211147907U (en) | 2019-12-27 | 2019-12-27 | Silicon micromechanical resonance pressure sensor based on MEMS technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922407584.5U CN211147907U (en) | 2019-12-27 | 2019-12-27 | Silicon micromechanical resonance pressure sensor based on MEMS technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211147907U true CN211147907U (en) | 2020-07-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922407584.5U Expired - Fee Related CN211147907U (en) | 2019-12-27 | 2019-12-27 | Silicon micromechanical resonance pressure sensor based on MEMS technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211147907U (en) |
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2019
- 2019-12-27 CN CN201922407584.5U patent/CN211147907U/en not_active Expired - Fee Related
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200731 |
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| CF01 | Termination of patent right due to non-payment of annual fee |