CN211122509U - Spectrometer structure and electronic equipment - Google Patents

Abstract

The utility model relates to an optical device technical field discloses a spectrum appearance structure and electronic equipment, including the lens, still include: the optical filter is arranged below the lens and used for filtering light with a specific waveband irradiated on the lens; and a light modulation layer disposed below the optical filter, wherein the light of different frequency bands emitted from the optical filter is modulated by the light modulation layer to obtain a modulated spectrum. The spectrometer structure has the advantages of high spectral analysis precision, short scanning time and low cost.

Description

Spectrometer structure and electronic equipment

technical field

The utility model relates to the technical field of optical devices, in particular to a spectrometer structure and electronic equipment.

Background technique

Spectrometers are scientific instruments that decompose light with complex components into spectral lines, which are composed of prisms or diffraction gratings. The light information is captured by the spectrometer, the photographic film is developed, or the computer automatically displays the numerical instrument for display and analysis, so as to detect what elements are contained in the article. Spectrometers are widely used in the detection of air pollution, water pollution, food hygiene, metal industry, etc.

Due to its large size and limited use environment, traditional spectral detection cannot meet the needs of on-site detection and real-time monitoring. The research on the spectral detection system based on the mobile platform can not only improve the shortcomings of traditional spectral detection methods, but also realize the transformation and upgrading of the spectral detection system to the direction of miniature intelligence, which is of great significance to the development of modern real-time spectral detection technology.

In the existing technical solution of combining a spectrometer with a mobile phone, one more spectroscopic module needs to be added, and the existing spectroscopic module is immature, and there are problems of long optical path and complicated components. Therefore, the spectroscopic module cannot be smoothly Integrate into existing shooting equipment such as mobile phones. In addition, the existing spectroscopic module only has only one layer of filter array, the precision of spectral analysis is not enough, and there is also the problem that the scanning time is too long.

Utility model content

(1) Technical problems to be solved

The purpose of the utility model is to provide a spectrometer structure and electronic equipment, so as to solve the technical problem of low spectral analysis precision in the spectroscopic module in the prior art.

(2) Technical solutions

In order to solve the above technical problems, according to the first aspect of the present invention, a spectrometer structure is provided, which includes a lens, and further includes: a filter, which is arranged under the lens and is used to filter out the light of a specific wavelength band on the lens; and a light modulation layer, the light modulation layer is arranged under the filter, wherein the light of different frequency bands emitted from the filter is processed by the light modulation layer modulation to obtain a modulated spectrum.

Wherein, the spectrometer structure further includes a substrate disposed between the light modulation layer and the filter.

Wherein, the light modulation layer includes a bottom plate disposed on the lower surface of the substrate and at least one modulation unit, each of the modulation units is located on the bottom plate, and each of the modulation units is respectively provided with a plurality of through-holes. The modulation holes provided in the bottom plate, and the modulation holes in the same modulation unit are arranged in a two-dimensional pattern structure with a first arrangement rule.

Wherein, the first arrangement rule of the two-dimensional graphic structure includes: all the modulation holes in the same two-dimensional graphic structure have the same cross-sectional shape, and each of the modulation holes is arranged in a gradual order according to the size of the structure parameter. and/or each of the modulation holes in the same two-dimensional pattern structure respectively has a corresponding cross-sectional shape, and each of the modulation holes is arranged in combination according to the second cross-sectional shape.

Wherein, the structural parameters of the modulation hole include but are not limited to inner diameter, long axis length, short axis length, rotation angle, side length or number of angles; the cross-sectional shape of the modulation hole includes but not limited to circle, ellipse, ten Glyph, Regular Polygon, Star or Rectangle.

Wherein, the light modulation layer is formed on the lower surface of the substrate by deposition or etching.

Wherein, the light modulation layer occupies the entire area or part of the area of the lower surface of the substrate.

Wherein, the optical filters are disposed in different regions on the upper surface of the substrate and deposit different optical filter layers, and the optical filters correspond to the respective modulation units in the underlying light modulation layer.

Wherein, the spectrometer structure further includes a CMOS image sensor for imaging and receiving the spectrum modulated by the light modulation layer, the CMOS image sensor is arranged on the lower surface of the light modulation layer; the spectrometer structure further includes For signal processing, the differential response is reconstructed to obtain a signal processing circuit of the original spectrum and image, and the signal processing circuit is arranged on the lower surface of the CMOS image sensor.

According to the second aspect of the present invention, there is also provided an electronic device including the above-mentioned spectrometer structure.

(3) Beneficial effects

Compared with the prior art, the spectrometer structure provided by the utility model has the following advantages:

The light is irradiated on the filter through the lens, and the filter can filter out the light of a specific wavelength band irradiated on the lens, and can also filter out the infrared light that cannot be recognized by the human eye. The light of different frequency bands emitted from the filter is modulated by the light modulation layer, and the modulation effects include but are not limited to light scattering, absorption, projection, reflection, interference, surface plasmon and resonance, etc. At the same time, the use of light modulation The difference of the two-dimensional pattern structure in the layer can improve the difference of the spectral response between different regions and improve the analysis accuracy of the spectrometer structure.

Description of drawings

1 is a schematic diagram of the overall explosion structure of the spectrometer structure according to Embodiment 1 of the present invention;

2 is a schematic side view of the structure of the spectrometer according to the first embodiment of the present invention;

FIG. 3 is a schematic diagram of the overall structure of the light modulation layer in FIG. 1;

4 is a schematic diagram of the overall explosion structure of the spectrometer structure according to the second embodiment of the present invention;

5 is a schematic side view of the structure of the spectrometer according to the second embodiment of the present invention;

FIG. 6 is a schematic diagram of the overall structure of the first embodiment of the light modulation layer in FIG. 4;

FIG. 7 is a schematic diagram of the overall structure of the second embodiment of the light modulation layer in FIG. 4;

FIG. 8 is a schematic diagram of the overall structure of the optical filter in FIG. 4 .

Reference number:

1: lens; 2: motor; 3: filter; 4: substrate; 5: light modulation layer; 6: CMOS image sensor; 7: signal processing circuit; 8: modulation unit; 9: modulation hole; 10: 11: second modulation unit; 12: third modulation unit; 13: fourth modulation unit; 14: fifth modulation unit; 15: blank unit; 16: filter unit.

Detailed ways

The specific embodiments of the present utility model will be described in further detail below with reference to the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inside", "Outside", "Clockwise", "Counterclockwise", "Axial" The orientation or positional relationship indicated by , "radial direction", "circumferential direction", etc. are based on the orientation or positional relationship shown in the accompanying drawings, which are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying the indicated device. Or the elements must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature delimited with "first", "second" may expressly or implicitly include at least one of that feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise expressly and specifically defined.

In the present utility model, unless otherwise expressly specified and limited, the terms "installation", "connection", "connection", "fixed" and other terms should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection connected, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication between two elements or the interaction between the two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

In the present invention, unless otherwise expressly specified and defined, a first feature "on" or "under" a second feature may be in direct contact with the first and second features, or the first and second features through an intermediary indirect contact. Also, the first feature being "above", "over" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.

In the description of this specification, description with reference to the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples", etc., mean specific features described in connection with the embodiment or example , structure, material or feature is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art may combine and combine the different embodiments or examples described in this specification, as well as the features of the different embodiments or examples, without conflicting each other.

As shown in FIG. 1 to FIG. 8 , the spectrometer structure is schematically shown including a lens 1 , a filter 3 and a light modulation layer 5 . The spectrometer structure of the present application can be integrated on the lens of a mobile phone, a camera or other electronic equipment with a photographing function.

In the embodiment of the present application, the lens 1 is used to receive incident light to image an object.

The filter 3 is arranged below the lens 1, and is used to filter out the light of a specific wavelength band irradiated on the lens 1, so as to realize spectral analysis of sub-bands and high-quality imaging. The light of the specific wavelength band can be light that can transmit below 800 nm (nanometer).

The light modulation layer 5 is disposed under the optical filter 3 , wherein the light in different frequency bands emitted from the optical filter 3 is modulated by the optical modulation layer 5 to obtain the modulated spectrum. Specifically, the light is irradiated on the filter 3 through the lens 1 . The light of different frequency bands emitted from the optical filter 3 is modulated by the light modulation layer 5, and the modulation effects include but are not limited to light scattering, absorption, projection, reflection, interference, surface plasmon polaritons, and resonance. The difference of the two-dimensional pattern structure in the light modulation layer 5 can improve the difference of the spectral response between different regions, and improve the analysis precision of the spectrometer structure.

In the embodiment of the present application, the filter 3 can filter out the light of a specific wavelength band irradiated on the lens 1, and can also filter out the infrared light that cannot be recognized by the human eye.

The spectrometer structure further includes a motor motor 2, which is used to control the movement of the lens 1, that is, to adjust the distance between the lens 1 and the filter 3, so as to achieve high-quality imaging. It should be noted that, since the structure and working principle of the electric motor 2 are well known to those skilled in the art, in order to save space, no detailed description is given here.

In the embodiment of the present application, the structure of the spectrometer can be integrated into the small volume required by the mobile phone lens module, and the spectral analysis function can also be realized without losing the original imaging function, and the spectral information can be used to improve the image quality And has the advantage of high integration.

As shown in FIG. 4 and FIG. 5 , in a preferred embodiment of the present application, the spectrometer structure further includes a substrate 4 disposed between the light modulation layer 5 and the filter 3 .

In another preferred embodiment of the present application, the light modulation layer 5 includes a bottom plate (not shown in the figure) disposed on the lower surface of the substrate 4 and at least one modulation unit 8, each of which is located in On the base plate, each modulation unit 8 is respectively provided with a plurality of modulation holes 9 pierced through the base plate, and the modulation holes 9 in the same modulation unit 8 are arranged in a two-dimensional pattern with a first arrangement rule graphic structure. Specifically, different two-dimensional pattern structures are used to modulate light of different wavelengths. The modulation effects include but are not limited to light scattering, absorption, projection, reflection, interference, surface plasmon polaritons, and resonance. The difference of the dimensional pattern structure can also improve the difference of the spectral response between different regions, thereby improving the analysis accuracy of the spectrometer.

As shown in FIG. 6 , there are five modulation units 8 distributed on the bottom plate of the light modulation layer 5 in this embodiment, which are a first modulation unit 10 , a second modulation unit 11 , a third modulation unit 12 , and a fourth modulation unit respectively 13 and the fifth modulation unit 14, wherein the fifth modulation unit 14 has the largest range, and its area is not less than the sum of the first four modulation units.

Wherein, the modulation holes 9 in the first modulation unit 10 , the second modulation unit 11 and the third modulation unit 12 are arranged in a row-by-row or column-by-column sequence according to a preset periodic sequence. The specific cross-sectional shapes of the modulation holes 9 in the modulation unit 8 are different from each other. The modulation holes 9 in the same modulation unit 8 have the same specific cross-sectional shape, but the arrangement order of the modulation holes 9 is arranged in an array according to the gradual order of the size of the structural parameters, so that each modulation unit 8 has a different modulation effect. , and can be modulated for different wavelengths of the spectrum. The gradation sequence of the structural parameters of the modulation hole 9 in the modulation unit 8 and/or the specific cross-sectional shape of the modulation hole 9 can be changed according to the modulation requirements, so that the modulation function and/or modulation object of the current modulation unit 8 can be changed.

The specific cross-sectional shape of the modulation hole 9 of the fourth modulation unit 13 and the modulation hole 9 of the first modulation unit 10 is the same, and both are circular, but the structure parameters of the modulation hole 9 of the fourth modulation unit 13 are the same as the structure of the modulation hole 9 of the first modulation unit 10. The parameters are different, specifically: the inner diameter of the modulation hole 9 of the fourth modulation unit 13 is smaller than the inner diameter of the modulation hole 9 of the first modulation unit 10 . Therefore, the fourth modulation unit 13 has a fourth modulation method for the input spectrum. The first modulation unit 10 , the second modulation unit 11 , the third modulation unit 12 , and the fourth modulation unit 13 are arranged in a matrix as a whole.

All modulation holes 9 in the fifth modulation unit 14 have the same specific cross-sectional shape, taking an ellipse as an example. All the modulation holes 9 are arranged in an array according to the gradual change of the size of the structure parameters and form a two-dimensional graphic structure. In this two-dimensional graphic structure, all modulation holes 9 are arranged in an array, and all modulation holes 9 are arranged row by row according to the length of the long axis, the length of the short axis and the rotation angle from small to large, so that all The whole of the modulation hole 9 constitutes the fifth modulation unit 14, and the fifth modulation unit 14 has a fifth modulation mode for the input spectrum.

It can be understood that the "some modulation mode for light of different wavelengths" described in this embodiment may include, but is not limited to, effects such as scattering, absorption, transmission, reflection, interference, surface plasmon polaritons, and resonance. The first, second, third, fourth and fifth light modulation methods are distinguished from each other. By setting the structure of the modulation hole 9 in the modulation unit 8, the difference in spectral response between different units can be improved, and by increasing the number of units, the sensitivity to the difference between different spectra can be improved.

It can be understood that when measuring different incident spectra, the modulation effect can be changed by changing the structural parameters of the modulation holes 9 in each modulation unit 8 . One or any combination of parameters such as period, radius, side length, duty cycle and thickness of the structure.

The structure of the fifth modulation unit 14 will be described in detail below.

All modulation holes 9 of the fifth modulation unit 14 are arranged according to the same arrangement rule, that is, according to the structural parameters of the length of the long axis, the length of the short axis and the rotation angle, they are gradually arranged row by row and column by column. All the modulation holes 9 on the modulation unit 8 can be regarded as a whole modulation unit 8, or it can be arbitrarily divided into several modulation units 8. The arbitrarily divided modulation units 8 have different modulation effects on the spectrum. Infinite groups of modulated spectral samples can be obtained on the above, which greatly increases the amount of data used to reconstruct the original spectrum, which is helpful for the recovery of the spectral type of the broadband spectrum. According to the structural parameter characteristics of the modulation holes 9 in each modulation unit 8, it is sufficient to determine the modulation effect of the modulation unit 8 on light of different wavelengths.

It can be understood that the specific cross-sectional shape of the modulation hole 9 includes, but is not limited to, a circle, an ellipse, a cross, a regular polygon, a star or a rectangle, etc., and can also be any combination of the above shapes. The above-mentioned structural parameters of the modulation hole 9 include, but are not limited to, inner diameter, length of major axis, length of minor axis, rotation angle, number of angles or side length, and the like.

In this embodiment, all the modulation holes 9 on the fifth modulation unit 14 are elliptical, and the length of the long axis and the length of the short axis of all the elliptical modulation holes 9 increase row by row and column by row, and the horizontal direction in FIG. 6 increases. is the horizontal axis, and the vertical direction is the vertical axis, then all the elliptical modulation holes 9 rotate from the vertical axis to the horizontal axis row by row, and the rotation angle thereof gradually increases. All the modulation holes 9 form an integral two-dimensional pattern structure, and the two-dimensional pattern structure is a matrix structure as a whole, and the area of the matrix structure ranges from 5 μm ² to 4 cm ² . The two-dimensional pattern structure is specifically as follows: only the short axis and the rotation angle of the elliptical modulation hole 9 are gradually adjusted, and the long axis of the ellipse selects a fixed value between 200 nm (nanometer) and 1000 nm (nanometer), for example, 500 nm (nanometer). ; The length of the short axis varies within the range of 120nm (nanometer) to 500nm (nanometer), the rotation angle of the ellipse varies within the range of 0° to 90°, and the arrangement period of the ellipse is a fixed value in the range of 200nm (nanometer) to 1000nm (nanometer). , for example, 500 nm (nanometers). The overall pattern range of the two-dimensional pattern structure is about a rectangular array structure with a length of 115 μm (micrometer) and a width of 110 μm (micrometer).

It can be seen that the light modulation micro-nano structure described in this embodiment utilizes the difference between the specific cross-sectional shapes of the different modulation holes 9 between different units and the arrangement of the specific modulation holes 9 in the same unit to realize the change of the modulation holes 9. The specific cross-sectional shape, the structural parameters of the modulation holes 9 and the arrangement period of the modulation holes 9 can realize different modulation effects on the spectrum of different wavelengths.

The light modulation micro-nano structures that can modulate light described in this embodiment include, but are not limited to, one-dimensional and two-dimensional photonic crystals, surface plasmons, metamaterials, and metasurfaces. Specific materials may include silicon, germanium, germanium-silicon materials, compounds of silicon, compounds of germanium, metals, III-V group materials, and the like. Wherein, the compound of silicon includes, but is not limited to, silicon nitride, silicon dioxide, silicon carbide, and the like.

When preparing the light modulation layer 5 , the light modulation layer 5 may be directly formed on the lower surface of the substrate 4 , or the prepared light modulation layer 5 may be transferred to the lower surface of the substrate 4 first.

The process of directly generating the light modulation layer 5 on the lower surface of the substrate 4 is as follows: the first step is to deposit a thickness of 100 nm (nanometer) to 400 nm (nanometer) on the lower surface of the substrate 4 by sputtering, chemical vapor deposition, etc. ) of the silicon plate. In the second step, the required two-dimensional pattern structure is drawn on it by pattern transfer methods such as photolithography and electron beam exposure. In the third step, the desired light modulation layer 5 can be obtained by etching the silicon flat plate by methods such as reactive ion etching, inductively coupled plasma etching, and ion beam etching.

The above-mentioned transfer preparation method of the light modulation layer 5 is specifically as follows: first, according to the designed structural parameters, the light modulation layer 5 is prepared on a silicon wafer or SOI (referring to a silicon-insulator-silicon wafer structure), and then transferred to the substrate by a transfer method. on the lower surface of the bottom 4.

In this embodiment, the light modulation layer 5 occupies the entire area of the lower surface of the substrate 4 , covering all the pixels of the CMOS (Complementary Metal Oxide Semiconductor) image sensor 6 .

In this embodiment, the filter 3 only allows light in a specific wavelength band to pass through, for example, only visible light passes through.

The substrate 4 is interposed between the filter 3 and the light modulation layer 5 . The light modulation layer 5 is provided with a light modulation micro-nano structure, which is used for light modulation of the incident light to obtain a modulated spectrum. The CMOS image sensor 6 is used to image and receive the modulated spectrum and provide a differential response to the modulated spectrum. The signal processing circuit 7 is used for signal processing to reconstruct the differential response to obtain the original spectrum and image.

As shown in FIG. 7 , the light modulation micro-nano structures on the light modulation layer 5 in this embodiment only occupy part of the area of the lower surface of the substrate 4 , leaving part of the area (pixels) for imaging, so that the Simultaneous imaging and spectral analysis functions in the camera module

In an embodiment of the present application, the light modulation micro-nano structure described in this embodiment and the structure, principle, spectral modulation method and preparation method of the spectrometer integrated on the lens of the mobile phone are basically the same as those in the previous embodiment, in order to save space For the sake of simplicity, the similarities will not be repeated here. The difference is that: the light modulation layer 5 includes several modulation units 8 and blank units 15, the specific cross-sectional shapes of the modulation holes 9 in each modulation unit 8 are different from each other, and the modulation holes 9 in the same modulation unit 8 have For the same specific cross-sectional shape, the specific cross-sectional shape of the modulation hole 9 includes, but is not limited to, a circle, an ellipse, a cross, a regular polygon, a star, or a rectangle, and can also be any combination of the above shapes.

The above-mentioned structural parameters of the modulation hole 9 include, but are not limited to, inner diameter, length of major axis, length of minor axis, rotation angle, number of angles or side length, and the like. Each modulation unit 8 has a different modulation effect and can be modulated for different wavelength spectra. The gradation sequence of the structural parameters of the modulation hole 9 in the modulation unit 8 and/or the specific cross-sectional shape of the modulation hole 9 can be changed according to the modulation requirements, so that the modulation function and/or modulation object of the current modulation unit 8 can be changed.

The arrangement and combination of the modulation unit 8 and the blank unit 15 are various, and this embodiment only schematically provides one of the arrangement and combination (see FIG. 7 for details).

In the embodiment of the present application, the spectrometer structure further includes a CMOS image sensor 6 for imaging and receiving the spectrum modulated by the light modulation layer 5 , and the CMOS image sensor 6 is disposed on the lower surface of the light modulation layer 5 . The setting of the optical filter 3 can also reduce the interference of the light in the frequency band not required for imaging to the CMOS image sensor 6 and improve the imaging quality.

In a preferred embodiment of the present application, the spectrometer structure further includes a signal processing circuit 7 for signal processing and reconstructing the differential response to obtain the original spectrum and image, and the signal processing circuit 7 is arranged on the CMOS image sensor 6 the lower surface.

As shown in FIG. 8 , the filter 3 in this embodiment includes a plurality of filter units 16 , and each filter unit 16 can be designed to filter light of different wavelength bands according to actual needs, and is compatible with the following The micro-nano structures in the light modulation layer 5 correspond to improve the accuracy of spectral analysis of a certain band, and realize spectral analysis of sub-bands. 600nm ~ 730nm), etc., and correspond to the micro-nano structure in the light modulation layer 5 below, mainly designed for the response of light in the corresponding band, so that the spectral analysis accuracy of the corresponding band is further improved, and the spectral analysis is realized through multiple units. High-precision analysis. The structural parameters of the filter unit 16 can be designed by themselves. The micro-nano structures on the light modulation layer 5 can be correspondingly designed according to different filter wavelength bands.

As shown in FIG. 1 and FIG. 2 , the structure of the substrate 4 is removed in this embodiment. When preparing the light modulation layer 5 , the light modulation layer 5 may be directly formed on the lower surface of the filter 3 , or the prepared light modulation layer 5 may be formed first. The good light modulation layer 5 is transferred to the lower surface of the optical filter 3 . For the sake of space saving, the same process flow as in the above-mentioned embodiment will not be repeated.

As shown in FIG. 3 , in the micro-nano structure described in this embodiment, an integral modulation unit 8 is disposed on the light modulation layer 5 . The modulation holes 9 in the two-dimensional pattern structure provided in the modulation unit 8 have respective specific cross-sectional shapes, and the modulation holes 9 are freely combined and arranged according to the specific cross-sectional shapes. Specifically, in the two-dimensional graphic structure, some modulation holes 9 have the same specific cross-sectional shape, each modulation hole 9 with the same specific cross-sectional shape constitutes a plurality of modulation hole groups, and the specific cross-sectional shapes of each modulation hole group are different from each other , and all modulation holes 9 are freely combined.

It is understandable that the modulation unit 8 as a whole can be regarded as modulating a spectrum for a specific wavelength, and it can also be freely divided into modulation units 8 having a number of modulation holes 9, so that it can be used for a variety of spectrums of different wavelengths. Modulation is performed to increase the flexibility and variety of light modulation.

To sum up, the micro-nano structure is prepared on the lower surface of the filter 3 to realize the spectroscopic function of spectral analysis, and the spectral analysis function can be integrated into the mobile phone without increasing the size of the camera module.

The micro-nano structure can occupy part or all of the area of the filter 3, and a part of the area (pixels) can be vacated. In this way, imaging and spectral analysis functions can be realized in one camera module, and the white balance can be adjusted through spectral analysis to improve the The imaging quality can also be used to identify and preliminarily calibrate the object of spectral analysis through imaging, thereby improving the accuracy of spectral analysis.

On the upper surface of the filter 3 (close to the lens group), different filter layers can be deposited in different regions, and make them correspond to the micro-nano structures below, so as to filter out signals in other wavelength bands and improve the accuracy of a certain wavelength band. The precision of spectral analysis enables spectral analysis of sub-bands.

Silicon-based, Si ₃ N ₄ (silicon nitride), and III-V semiconductors can be selected for device preparation, which can be realized in batches through the existing micro-nano processing technology, and large-area and multiple device preparation can be carried out at one time. Higher maturity and lower cost.

In addition, by precisely controlling the growth and etching process of micro-nano structured materials, different two-dimensional structure diagrams and fine-structure particle sizes can be designed to achieve the measurement wavelength range and accuracy of the spectrometer. In addition, designing different two-dimensional structures on the lower surface of the filter can realize the technical parameters that control the function of the original camera.

The CMOS image sensor 6 simultaneously receives the signals of the entire imaging surface, which avoids the problem of long response time of the scanning spectrometer.

The above are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the within the scope of protection of the present invention.

Claims (10)

1. A spectrometer arrangement comprising a lens, characterized in that it further comprises:

the optical filter is arranged below the lens and used for filtering light with a specific waveband irradiated on the lens; and

and the light modulation layer is arranged below the optical filter, and the light of different frequency bands emitted from the optical filter is modulated by the light modulation layer to obtain a modulated spectrum.

2. The spectrometer structure of claim 1, further comprising a substrate disposed between the light modulation layer and the filter.

3. The spectrometer structure of claim 2, wherein the light modulation layer comprises a bottom plate disposed on the lower surface of the substrate and at least one modulation unit, each modulation unit is disposed on the bottom plate, a plurality of modulation holes penetrating the bottom plate are disposed in each modulation unit, and the modulation holes in the same modulation unit are arranged in a two-dimensional pattern structure having a first arrangement rule.

4. The spectrometer arrangement according to claim 3, wherein the first arrangement rule of the two-dimensional pattern structure comprises:

all the modulation holes in the same two-dimensional graph structure have the same cross section shape, and the modulation holes are arranged in an array mode according to the gradual change sequence of the size of the structural parameter; and/or

And each modulation hole in the same two-dimensional graph structure has a corresponding cross section shape, and the modulation holes are combined and arranged according to a second cross section shape.

5. The spectrometer structure according to claim 4, wherein the structural parameters of the modulation aperture comprise an inner diameter, a length of a long axis, a length of a short axis, a rotation angle, a side length, or a number of angles; the cross-sectional shape of the modulation hole comprises a circle, an ellipse, a cross, a regular polygon, a star or a rectangle.

6. The spectrometer structure of claim 2, wherein the light modulation layer is formed on the lower surface of the substrate by deposition or etching.

7. The spectrometer structure of claim 2, wherein the light modulation layer occupies all or part of the area of the lower surface of the substrate.

8. The spectrometer structure of claim 3, wherein the optical filters are disposed at different areas of the upper surface of the substrate and deposit different filter layers corresponding to each of the modulation cells in the underlying light modulation layer.

9. The spectrometer structure of claim 1, further comprising a CMOS image sensor for imaging and receiving the spectrum modulated by the light modulation layer, the CMOS image sensor being disposed on a lower surface of the light modulation layer;

the spectrometer structure further comprises a signal processing circuit for processing signals and reconstructing the differential response to obtain an original spectrum and an image, wherein the signal processing circuit is arranged on the lower surface of the CMOS image sensor.

10. An electronic device comprising a spectrometer arrangement according to any of claims 1 to 9.

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