CN210897562U

CN210897562U - Mobile terminal device and 5G microstrip filter thereof

Info

Publication number: CN210897562U
Application number: CN201922157189.6U
Authority: CN
Inventors: 蔡凌云
Original assignee: ZTE Corp
Current assignee: Zte Terminal Co ltd
Priority date: 2019-12-05
Filing date: 2019-12-05
Publication date: 2020-06-30
Anticipated expiration: 2029-12-05

Abstract

The utility model provides a 5G microstrip filter, it includes: the annular patch arm is printed on the upper layer of the medium plate and is annular; the resonator comprises a pair of loop structures which are symmetrically printed on the upper layer of the dielectric plate and are positioned in the annular patch arm, and a pair of slotted structures which are printed on the floor layer of the dielectric plate and correspond to the loop structures respectively; and the two ends of each microstrip branch are respectively connected with two pairs of loop structures of two adjacent resonators in the plurality of resonators. The 5G microstrip filter of the utility model can simultaneously solve the problems of miniaturization, wide bandwidth and high out-of-band rejection of the size of the filter; furthermore, the utility model also provides a mobile terminal equipment who has above-mentioned 5G microstrip filter.

Description

Mobile terminal device and 5G microstrip filter thereof

Technical Field

The utility model belongs to the technical field of the electron, a mobile terminal equipment and 5G microstrip filter thereof is related to.

Background

With the rapid development of wireless communication technology and the increasing tension of global communication frequency bands, some emerging mobile communication services put forward new requirements on the development of mobile communication networks, and research and development of 5G are promoted due to wider frequency band bandwidth, higher-speed data communication service, ultrahigh connection number density, ultralow time delay and the like.

5G communication is the leading communication technology at present, and various communication companies compete to develop research on relevant aspects. The Sub 6GHz adopts the MIMO technology, and a large number of filters are required to be integrated in a terminal product, so that higher requirements are imposed on the size and weight of the filters; the 5G communication working frequency band is 3.3-4.2GHZ and 4.4-5GHZ, the bandwidth is wide, and therefore the requirement on the pass band of the filter is high. The traditional metal filter has narrow bandwidth, too large volume and weight, cannot realize integration with an antenna, and has poor filtering effect, so that a plane filter which can cover a 5G frequency band and is compatible with a 4G communication frequency band is urgently designed.

Disclosure of Invention

The utility model aims to overcome the defects of the prior art and provide a 5G microstrip filter which can simultaneously solve the problems of miniaturization, wide bandwidth and high out-of-band rejection of the size of the filter; furthermore, the utility model also provides a mobile terminal equipment who has above-mentioned 5G microstrip filter.

In order to realize the above object of the present invention, the present invention provides a 5G microstrip filter, which includes: the annular patch arm is printed on the upper layer of the medium plate and is annular; the resonator comprises a pair of loop structures which are symmetrically printed on the upper layer of the dielectric plate and are positioned in the annular patch arm, and a pair of slotted structures which are arranged on the floor layer of the dielectric plate and correspond to the loop structures respectively; and the two ends of each microstrip branch are respectively connected with two pairs of loop structures of two adjacent resonators in the plurality of resonators.

Wherein the plurality of microstrip branches are located in the annular patch arm.

Further, the resonator further includes: and the additional patches are printed on the upper layer of the dielectric plate and are respectively positioned in the middle of the loop structures, and each additional patch is connected with the corresponding loop structure.

Further, the resonator further includes: and correspondingly connecting the additional patches with the short-circuit columns of the dielectric slab floor layer.

Further, the resonator further includes: and the pair of feed ports are printed on the upper layer of the dielectric plate and are respectively connected with the two ends of the annular patch arm.

Further, the resonator further includes: and the two ends of the microstrip lines are respectively connected with a pair of microstrip lines at two sides of a pair of loop structures of the same resonator.

Wherein, the microstrip branch knot is connected with the adjacent microstrip line.

The opposite sides of the pair of loop structures of the resonator are respectively provided with an outer opening, and the opposite sides of the pair of slotted structures are respectively provided with an inner opening.

Wherein one or more of the patch arm length, the additional patch size, the loop structure size, the slot structure size are adjusted according to the center frequency of the filter.

Furthermore, the utility model also provides a mobile terminal equipment, it includes as above 5G microstrip filter.

Compared with the prior art, the utility model discloses mobile terminal equipment and 5G microstrip filter thereof has following advantage:

1. the utility model discloses a mobile terminal equipment and 5G microstrip filter thereof, the size is little, simple structure, and easily integration, the filter effect is good, and the bandwidth is wide, and the outband restraines well, and it is many to support the frequency channel.

2. The utility model discloses a mobile terminal equipment and 5G microstrip filter thereof, the loop structure on dielectric plate upper strata and the fluting structure that floor layer position corresponds are constituteed into a novel syntonizer, and the loop structure of adjacent syntonizer passes through the microstrip branch and knot and connects, can produce a plurality of adjacent resonant frequency to make the bandwidth width of wave filter.

3. The utility model discloses a mobile terminal equipment and 5G microstrip filter thereof sets up additional paster in the loop structure, can reduce the resonant frequency of wave filter, and every short circuit post can increase a transmission limit to realize wideer frequency band.

Drawings

Fig. 1 is a perspective view of the filter of the present invention;

fig. 2 is a schematic structural diagram of the upper layer of the filter of the present invention;

fig. 3 is a schematic structural view of the filter floor layer of the present invention;

fig. 4 is an insertion loss diagram of the frequency of the filter 5G according to the present invention.

Detailed Description

The following detailed description of the preferred embodiments of the present invention is provided in conjunction with the accompanying drawings, and it should be understood that the detailed description of the preferred embodiments is provided for illustration and explanation of the embodiments of the present invention, and is not intended to limit the embodiments of the present invention.

The utility model provides a 5G microstrip filter, it includes: an annular patch arm printed on the upper layer 71 of the dielectric plate; a plurality of resonators, each resonator comprises a pair of loop structures which are symmetrically printed on the upper layer 71 of the dielectric plate and are positioned in the annular patch arm, and a pair of slotted structures which are printed on the floor layer 72 of the dielectric plate and correspond to the positions of the pair of loop structures respectively; and the microstrip branches 9 are printed on the upper layer of the dielectric plate, and two ends of each microstrip branch are respectively connected with two pairs of loop structures of two adjacent resonators in the plurality of resonators.

Specifically, as shown in fig. 1, the utility model discloses a dielectric slab has upper 71 and floor layer 72, the upper surface printing of upper 71 has the annular paster arm that is the annular and is used for producing a low frequency passband, this annular paster arm includes first semi-annular paster arm 21 and second semi-annular paster arm 22, first semi-annular paster arm 21 and second semi-annular paster arm 22 set up along the horizontal symmetry axis symmetry of dielectric slab upper 71, and the both ends of first semi-annular paster arm 21 and the both ends of second semi-annular paster arm 22 are not linked together, namely, the one end of first semi-annular paster arm 21 and the relative one end of second semi-annular paster arm 22 are not linked together and form a breach, the other end of first semi-annular paster arm 21 and the relative other end of second semi-annular paster arm 22 are also not linked together and form a breach. One end of the first semi-annular patch arm 21 is connected with one feeding port 1 printed on the upper surface of the upper layer 71 of the dielectric plate, and the other end of the second semi-annular patch arm 22 is connected with the other feeding port 1 printed on the upper surface of the upper layer 71 of the dielectric plate.

When in design, the annular patch arm can be in a rectangular annular shape, and can also be in an annular shape with other shapes.

The utility model discloses a wave filter still includes a plurality of syntonizers including the annular paster arm of printing at medium-plate upper 71 upper surface, and a plurality of syntonizers are connected through printing in a plurality of microstrip minor matters 9 of medium-plate upper 71 upper surface.

Each resonator comprises a pair of loop structures which are symmetrically printed on the upper layer 71 of the dielectric plate and are positioned in the annular patch arm and a pair of slotted structures which are arranged on the floor layer 72 of the dielectric plate and correspond to the loop structures respectively, and the two pairs of loop structures of every two adjacent resonators are connected together through a microstrip branch.

The annular patch arms on the upper surface of the upper layer 71 of the dielectric plate can generate a low-frequency pass band, the low-frequency pass band is electromagnetically coupled to a plurality of pairs of symmetrical loop structures in the annular patch arms, each pair of loop structures and a pair of slotted structures arranged at the corresponding positions of the upper surface of the floor layer 72 form a resonator, the two pairs of loop structures of the adjacent resonators are connected through microstrip branches, and then the resonators can be tuned into the pass band, so that a broadband is realized.

Specifically, as shown in fig. 1, a plurality of pairs of loop structures located in the annular patch arm and arranged in parallel are printed on the upper surface of the upper layer 71 of the dielectric plate, and a plurality of pairs of slotted structures corresponding to the plurality of pairs of loop structures are respectively formed on the lower surface of the floor layer 72 of the dielectric plate.

As shown in fig. 2, each pair of loop structures includes a first loop structure 31 and a second loop structure 32 symmetrically disposed along a transverse symmetry axis of the dielectric board upper layer 71, and outer openings are respectively disposed on opposite sides of the first loop structure 31 and the second loop structure 32. When the design is carried out, the first loop structure 31 and the second loop structure 32 have the same structure, and both can adopt a hollow rectangle, and the outer edge of the rectangle, which is far away from the transverse symmetry axis and is parallel to the transverse symmetry axis, is provided with an opening.

As shown in fig. 3, each pair of the grooved structures corresponding to each pair of the loop structures in position (i.e., located right under the pair of the loop structures) includes a first grooved structure 61 and a second grooved structure 62 symmetrically arranged along a transverse symmetry axis of the dielectric slab floor layer 72, and opposite edges of the first grooved structure 61 and the second grooved structure 62 are respectively provided with inner openings. When designed, the first and second

slotted structures

61 and 62 are identical in structure and have a shape corresponding to the shapes of the first and

second loop structures

31 and 32, i.e., also a hollow rectangle. In contrast, the inner openings of the first 61 and second 62 slotted structures are arranged on the inner side close to and parallel to the transverse axis of symmetry.

In addition, the first loop structure 31 and the second loop structure 32 may also take other shapes, and accordingly, the shapes of the first grooved structure 61 and the second grooved structure 62 correspond to the shapes of the first loop structure 31 and the second loop structure 32.

The resonator includes, in addition to the above-mentioned members: a plurality of additional patches 4 printed on the upper layer 71 of the dielectric board and respectively located in the middle of the plurality of loop structures, each additional patch 4 being connected to the inner edge of the corresponding loop structure; correspondingly connecting the additional patches 4 with the short-circuit columns 5 of the dielectric slab floor layer 72, and correspondingly respectively forming through holes for mounting the short-circuit columns at corresponding positions of the dielectric slab upper layer 71 and the dielectric slab floor layer 72; and the microstrip branch 9 is printed on the upper layer 71 of the dielectric plate, two ends of the microstrip branch are respectively connected with a pair of microstrip lines 8 on two sides of a pair of loop structures of the same resonator, and the microstrip branch is used for connecting the microstrip branch 9 connected with the adjacent resonator with two adjacent microstrip lines 8 of the adjacent resonator.

Wherein the additional patch 4 in the loop structure can lower the resonance frequency of the filter, and the shorting post 5 can add a transmission pole, thereby realizing a wider frequency band. One or more of the patch arm length, the additional patch size, the loop structure size, and the slot structure size may be adjusted during manufacture based on the center frequency of the filter. That is, the center frequency of the filter can be adjusted by adjusting the length of the annular patch arm, the size of the additional patch, the size of the symmetrical loop structure, and the size of the notch structure, for example, by increasing the length or width of the annular patch arm, the center frequency of the filter can be decreased.

The decoupling structure of the dielectric plate upper layer 71 and the floor layer 72 can adopt a PCB copper-clad form, and the dielectric plate can be made of Rogers RT5880, polytetrafluoroethylene, FR4 (glass fiber epoxy resin copper clad laminate), piezoelectric ceramic BaTiO3 epoxy high dielectric constant composite material and other materials.

The structure of the filter according to the present invention will be described with reference to the following embodiments.

Example 1

In the present embodiment, a dielectric plate with a size of 40mm × 25mm (where 40mm is the size along the transverse symmetry axis and 25mm is the size along the longitudinal symmetry axis) is used, and an FR4 dielectric plate (i.e., a glass fiber epoxy resin copper clad plate) is used as the dielectric plate, and has a dielectric constant ∈ r of 4.0 and a loss tangent tan δ of 0.016. The length of the annular patch arm on the upper layer of the dielectric plate is determined by one fourth of the operating wavelength of low frequency, and if the annular patch arm operates in 4G LTE Band1, the total length of the annular patch arm is 22mm, and the length of the annular patch arm can be adjusted to operate in a corresponding bandwidth.

A pair of loop structures symmetrically printed on the upper layer 71 of the dielectric plate work in 5G communication, the working frequency ranges of 3.3-4.2GHZ and 4.4-5GHZ are n77 and n79 respectively, the central frequencies of the two frequency ranges are 3.75GHz and 4.7GHz respectively, the two frequency ranges can be in a pass band, a filter is required to be ultra-wideband, and the pair of loop structures form a dipole mode. The length of the whole ring of each loop structure is determined by half wavelength of the working frequency, the length is 18mm, the length of each side is about 5mm, namely the length of the opening is 2mm, and the length of each side can be adjusted to ensure that the filter works in a corresponding bandwidth.

The symmetrical pair of slotted structures on the dielectric floor layer 72 also need to operate in the same frequency band to increase the operating bandwidth of the filter.

The additional patch 4 added to the loop structure can reduce the resonance frequency of the filter by adjusting its size. By connecting the shorting post 5 to the underlying floor layer 72, adjusting the position of the shorting post 5 can add a transmission pole within the passband, thereby achieving a wider frequency band.

The multiple pairs of loop structures are connected by the micro-strip branches 9, and the coupling degree between the two adjacent groups of loop structures is adjusted by adjusting the length of the micro-strip branches 9, so that multiple resonant frequencies can be generated to work in the same pass band, and the working bandwidth in a frequency band is enlarged.

Tuning the spacing between the annular patch arms and the sets of loop structures can increase the isolation between the filter bands. As shown in fig. 4, which is an insertion loss diagram obtained by simulation analysis of the filter of the present embodiment using electromagnetic simulation software, it can be seen from fig. 4 that the filter of the present embodiment has good out-of-band rejection, which is already below 40 dB.

The filter of the embodiment can cover the working frequency bands of 4G and 5G wireless communication systems, and has the advantages of small size, simple structure, easiness in integration, good transmission performance and the like.

Example 2

The dielectric plate of the present embodiment adopts a dielectric plate with a high dielectric constant, which can further reduce the size of the filter. The piezoelectric ceramic BaTiO3 epoxy high-dielectric-constant composite material is adopted, the dielectric constant is epsilon r 25.0, and the size of the dielectric plate is 16mm 10 mm. The length of the annular patch arm of the upper layer 71 of the dielectric plate is determined by 4G LTE Band1, the total length of the annular patch arm is 8.8mm, and the total length of the annular patch arm can be adjusted to enable the filter to work in a corresponding bandwidth.

The center frequencies of two working frequency bands of the upper layer 71 loop structure of the dielectric plate are respectively 3.75GHz and 4.7GHz, the length is 7.2mm, the length of each side can be about 2mm, and the length of the loop structure can be adjusted to enable the filter to work in a corresponding bandwidth.

The utility model discloses the miniaturization of size can be solved simultaneously to the 5G microstrip filter, and the broadband ization, the problem of high outband suppression to the following problem that the present stage wave filter exists has been solved: first, although some filters are composed of a plurality of resonators or a plurality of resonators, the actual size of the circuit is too large due to the resonant circuit composed of the plurality of resonators or the plurality of resonators, which is not favorable for the miniaturization development trend of the circuit; secondly, some filters use resonators with multiple modes, although the size of the circuit is saved to a certain extent, the passband selectivity is poor, and the out-of-band rejection is not high due to the coupling of a multi-microstrip structure on the surface layer; thirdly, the existing filter is built by adopting a circuit structure, the impedance of the inductor is very low for low frequency, and the impedance of the inductor is quite high on high frequency, so that the attenuation of ultrahigh frequency signals, particularly signals at the high end of an ultrahigh frequency wave band is severe; and fourthly, a cavity filter is adopted, the Q value is high, the out-of-band rejection is good, but the size is large, and the integration into a terminal product is difficult.

The utility model discloses except providing foretell 5G microstrip filter, still provide one kind including as above 5G microstrip filter's mobile terminal equipment.

To sum up, compare with prior art, the utility model discloses mobile terminal equipment and 5G microstrip filter have following advantage:

The above description is only an embodiment of the present invention applied to a wireless terminal access product, and any modification, equivalent replacement, and improvement made in the aspects of different standard frequency band combinations and connection mode changes, etc. within the spirit and principle of the method should be included in the protection scope of the present invention.

Claims

1. A 5G microstrip filter comprising:

the annular patch arm is printed on the upper layer of the medium plate;

the resonator comprises a pair of loop structures which are symmetrically printed on the upper layer of the dielectric plate and are positioned in the annular patch arm, and a pair of slotted structures which are arranged on the floor layer of the dielectric plate and correspond to the loop structures respectively;

and the two ends of each microstrip branch are respectively connected with two pairs of loop structures of two adjacent resonators in the plurality of resonators.

2. The 5G microstrip filter of claim 1 wherein the plurality of microstrip stubs is located in a ring patch arm.

3. The 5G microstrip filter of claim 2 wherein the resonator further comprises:

and the additional patches are printed on the upper layer of the dielectric plate and are respectively positioned in the middle of the loop structures, and each additional patch is connected with the corresponding loop structure.

4. The 5G microstrip filter of claim 3 wherein the resonator further comprises:

and correspondingly connecting the additional patches with the short-circuit columns of the dielectric slab floor layer.

5. The 5G microstrip filter of claim 4 wherein the resonator further comprises:

and the pair of feed ports are printed on the upper layer of the dielectric plate and are respectively connected with the two ends of the annular patch arm.

6. The 5G microstrip filter of claim 5 wherein the resonator further comprises:

and the two ends of the microstrip lines are respectively connected with a pair of microstrip lines at two sides of a pair of loop structures of the same resonator.

7. The 5G microstrip filter according to claim 6 wherein the microstrip stub is connected to an adjacent microstrip line.

8. The 5G microstrip filter of claim 1 wherein the resonators have outer openings on opposite sides of the pair of loop structures and inner openings on opposite sides of the pair of slot structures.

9. The 5G microstrip filter according to claim 6 wherein one or more of patch arm length, additional patch size, loop structure dimensions, slot structure dimensions are adjusted according to the filter's center frequency.

10. A mobile terminal device, characterized in that it comprises a 5G microstrip filter according to any of claims 1-9.