CN210575950U - Circuit device - Google Patents
Circuit device Download PDFInfo
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- CN210575950U CN210575950U CN201922170023.8U CN201922170023U CN210575950U CN 210575950 U CN210575950 U CN 210575950U CN 201922170023 U CN201922170023 U CN 201922170023U CN 210575950 U CN210575950 U CN 210575950U
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- 239000000758 substrate Substances 0.000 claims abstract description 72
- 229910000679 solder Inorganic materials 0.000 claims abstract description 44
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000000903 blocking effect Effects 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 3
- 239000010949 copper Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000011133 lead Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
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- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
The utility model relates to a circuit device, include: a first substrate plate, a first component and a second component; a conductive layer is arranged on the first substrate plate; the first surface of the first component is fixed on the conducting layer of the first substrate plate through electronic solder; the second component is stacked on the second surface of the first component, the first surface of the second component and the second surface of the first component are fixed through electronic solder, and the second surface of the second component is electrically connected with the conducting layer of the first substrate plate through a bonding aluminum wire. The utility model discloses replace the tiling mode with the mode of piling up with each components and parts and set up on first substrate board, it is fixed through electron solder between each components and parts, pile up and fix through electron solder with the conducting layer of first substrate board in the first component of below, pile up and be connected through the conducting layer electricity of bonding aluminum wire with first substrate board in the second component of the top, can reduce the area of substrate board for the volume of circuit device is littleer, realizes the higher integrated level.
Description
Technical Field
The utility model relates to a semiconductor power device field especially relates to a circuit device.
Background
With the development of the electronic industry, the performance requirements for integrated circuit chips are increasing, and the integrated circuit chips adopt a certain process, and elements such as transistors, resistors, capacitors, inductors and the like required in a circuit and wiring are interconnected together, manufactured on a small semiconductor wafer or a plurality of small semiconductor wafers or medium substrates, and then packaged in a tube shell to form a micro structure with the required circuit functions.
With the further increase of the requirements of electronic products for intellectualization and miniaturization, for the integrated circuit chip, the volume of the integrated circuit chip is reduced as much as possible while the integration level is increased, and thus the volume of the product using the integrated circuit chip is reduced.
SUMMERY OF THE UTILITY MODEL
In view of the above, there is a need for a circuit device with a smaller size.
A circuit device, comprising: a first substrate plate, a first component and a second component;
a conductive layer is arranged on the first substrate plate;
the first surface of the first component is fixed on the conducting layer of the first substrate plate through electronic solder;
the second component is stacked on the second surface of the first component, the first surface of the second component and the second surface of the first component are fixed through electronic solder, and the second surface of the second component is electrically connected with the conducting layer of the first substrate plate through a bonding aluminum wire.
In one embodiment, the second component includes a first sub-component and a second sub-component;
the first surface of the first sub-device is fixed with the second surface of the first component device through electronic solder;
the first surface of the second sub-device is fixed with the second surface of the first sub-device through electronic solder, and the second surface of the second sub-device is electrically connected with the conductive layer of the first substrate plate through a bonding aluminum wire.
In one embodiment, the electronic solder is a solder paste.
In one embodiment, the first substrate plate is a DBC plate.
In one embodiment, a second substrate table is also included;
the second substrate plate is provided with a heat conduction layer, and the heat conduction layer of the second substrate plate is fixedly connected with the second surface of the second component through non-conductive glue.
In one embodiment, the first component comprises any one or more of a chip, a diode, a resistor, a capacitor, and a PCB.
In one embodiment, the second component comprises any one or more of a chip, a diode, a resistor, a capacitor, and a PCB.
In one embodiment, the circuit device is an IGBT module, the first component is an IGBT chip, and the second component is a diode.
In one embodiment, the diode is a freewheeling diode.
In one embodiment, the IGBT chip is a reverse conducting IGBT chip or a reverse blocking IGBT chip.
Above-mentioned circuit device, replace tiling mode with each components and parts with the mode of piling up and set up on first substrate board, it is fixed through electronic solder between each components and parts, it fixes through electronic solder and the conducting layer of first substrate board to pile up in the first components and parts of below, it is connected with the conducting layer electricity of first substrate board through bonding aluminium wire to pile up in the second components and parts of the top, can reduce the area of the required substrate board of circuit device, reduce the bonding aluminium wire's between components and parts and the substrate board conducting layer connection, make circuit device's volume littleer, realize higher integrated level.
Drawings
Fig. 1 is a schematic structural diagram of a circuit device commonly known in the prior art;
FIG. 2 is a schematic diagram of a circuit device in one embodiment;
fig. 3 is a schematic structural diagram of a circuit device in another embodiment.
Detailed Description
In order to facilitate understanding of the present invention, the present invention will be described more fully below. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element and be integral therewith, or intervening elements may also be present. The terms "mounted," "one end," "the other end," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
At present, a common circuit device is generally laid on a first substrate board 101, as shown in fig. 1, one surface of the component, which is attached to a conductive layer of the first substrate board 101, is fixed and electrically connected through an electronic solder, and the other surface is connected to a conductive layer of a third substrate board 102 through a bonding aluminum wire 103, so as to form a loop, and the component laid in a flat manner needs the first substrate board 101 with a large area, and at the same time, the third substrate board 102 needs to be additionally arranged to form the loop.
In one embodiment, as shown in fig. 2, there is provided a circuit device comprising: a first substrate plate 101, a first component 200 and a second component 300;
a conductive layer is arranged on the first substrate plate 101;
the first component 200 is fixed on the first surface on the conductive layer of the first substrate board 101 by electronic solder;
the second component 300 is stacked on the second surface of the first component 200, the first surface of the second component 300 and the second surface of the first component 200 are fixed by electronic solder, and the second surface of the second component 300 is electrically connected to the conductive layer of the first substrate board 101 through the bonding aluminum wire 103.
The first substrate plate 101 is used to provide structural support and electrical interconnection for the first component 200 and the second component 300, and a conductive layer is formed on the side of the first substrate plate 101 on which the first component 200 and the second component 300 are placed using PVD, CVD, electrolytic plating, electroless plating process, or other suitable metal deposition process. The conductive layer may be one or more layers of aluminum (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au), silver (Ag), or other suitable conductive material.
An electronic solder is deposited on the conductive layer using an evaporation, electrolytic plating, electroless plating, ball drop or screen printing process for securing and electrically connecting the first substrate board 101 and the first component 200 or for securing and electrically connecting the second component 300 and the first component 200. The electronic solder may be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, tin-lead solder and combinations thereof, with optional flux solutions therein. For example, the electronic solder may be eutectic Sn/Pb, high lead solder, or lead-free solder. The electronic solder is bonded to the conductive layer using a suitable attachment or bonding process. In one embodiment, the balls or bumps are formed by heating the electronic solder above its melting point to secure and electrically connect the first component 200 to the conductive layer, or to secure and electrically connect the second component 300 to the first component 200. In one embodiment, a ball or bump of electronic solder is formed over an Under Bump Metallization (UBM) having a wetting layer, a barrier layer, and an adhesion layer. It may also be crimped or thermocompression bonded to the conductive layer. Balls or bumps represent one type of interconnect structure that can be formed over a conductive layer. The interconnect structure may also use bond wires, conductive paste, stud bumps, micro bumps, or other electrical interconnects. The first component 200 has a plurality of pins on a first side and a plurality of pins on a second side, and the types and the number of the pins may be different according to the components. The first surface of the second component 300 is provided with a plurality of pins, and the second surface is also provided with a plurality of pins, and the type and number of the pins may be different according to the component structure. Depending on the circuit design of the circuit device, one or more pins on the first side of the first component device 200 are electrically connected to the conductive layer of the first substrate board 101 by means of electronic solder, and one or more pins on the second side of the first component device 200 are electrically connected to one or more pins on the first side of the second component device 300 by means of electronic solder.
The second side of the second component 300 is electrically interconnected by means of bonding aluminium wires 103 with the conductive layer of the first substrate board 101, which constitutes a functional circuit device with the first component 200 via the conductive layer of the first substrate board 101.
In the circuit device, the components are arranged on the first substrate board 101 in a stacking mode instead of a tiling mode, the components are fixed through electronic solder, the first component 200 stacked at the bottom is fixed with the conducting layer of the first substrate board 101 through the electronic solder, and the second component 300 stacked at the top is electrically connected with the conducting layer of the first substrate board 101 through the bonding aluminum wire 103, so that the area of the substrate board required by the circuit device can be reduced, the connection of the bonding aluminum wire 103 between the components and the conducting layer of the substrate board is reduced, the volume of the circuit device is smaller, and higher integration level is realized.
In one embodiment, the second component 300 includes a first sub-component and a second sub-component;
the first side of the first sub-device is secured to the second side of the first component device 200 by an electronic solder;
the first side of the second sub-component is fixed to the second side of the first sub-component by means of electronic solder, and the second side of the second sub-component is electrically connected to the conductive layer of the first substrate board 101 by means of a bonded aluminum wire 103.
The second component 300 may be composed of two or more sub-components, and the sub-components constituting the second component 300 are vertically stacked, and the first surface of the first sub-component stacked at the bottom is used as the first surface of the second component 300, and is fixed and electrically connected to the second surface of the first component 200 by electronic solder. The second surface of the uppermost sub-device is stacked as the second surface of the second component 300, and is electrically connected to the conductive layer of the first substrate board 101 through the bonding aluminum wire 103. In one embodiment, the second component 300 comprises two sub-components, a first sub-component and a second sub-component, respectively, such that the second side of the second sub-component serves as the second side of the second component 300 and is electrically connected to the conductive layer of the first substrate board 101 by means of a bonded aluminum wire 103.
In one embodiment, the first component 200 includes two or more sub-components, each of which is vertically stacked, and the first surface of the sub-component stacked at the lowermost position serves as the first surface of the first component 200, and is fixed and electrically connected to the conductive layer of the first substrate board 101 by electronic solder. The second surface of the sub-device stacked on the uppermost side serves as the second surface of the first component device 200, and is fixed and electrically connected to the first surface of the second component device 300 by electronic solder.
In one embodiment, the electronic solder is a solder paste.
Solder paste, also known as solder paste, is a paste mixture formed by mixing solder powder, soldering flux, other surfactants, thixotropic agents, and the like. The method is mainly used for welding electronic components such as PCB surface resistance, capacitance, IC and the like in the SMT industry. The soldering paste has certain viscosity at normal temperature, can initially adhere electronic components to a set position, and welds two welded components or the welded components and a substrate plate together to form permanent connection along with volatilization of a solvent and part of additives at a welding temperature.
In one embodiment, the first substrate plate 101 is a DBC plate.
The DBC (Direct Bonding Copper clad ceramic) board is a Copper clad ceramic substrate for short, has the characteristics of high heat conduction, high electrical insulation, high mechanical strength, low expansion and the like of ceramic, has high conductivity and excellent welding performance of oxygen-free Copper, and can be etched into various patterns like a PCB (printed circuit board). The DBC board can realize heat dissipation for components and parts while utilizing the copper-clad layer to conduct electricity.
In one embodiment, as shown in FIG. 3, a second substrate table 104;
the second substrate 104 is provided with a heat conducting layer, and the heat conducting layer of the second substrate 104 is fixedly connected with the second surface of the second component 300 through a non-conductive adhesive.
The components stacked and placed far away from the first substrate board 101 are difficult to dissipate heat through the first substrate board 101, and in order to provide heat dissipation performance of the circuit devices and protect the components, the second substrate board 104 is arranged, and the heat conduction layer of the second substrate board 104 is fixedly connected with the second surface of the second component 300, so that the heat dissipation effect of the components far away from the first substrate board 101 is improved.
The second substrate plate 104 may be a ceramic substrate, a silicon substrate plate, a silicon carbide substrate plate.
In one embodiment, the first component 200 includes any one or more of a chip, a diode, a resistor, a capacitor, and a PCB.
In one embodiment, the second component 300 includes any one or more of a chip, a diode, a resistor, a capacitor, and a PCB.
The types of the first component 200 and the second component 300 are selected according to the function to be implemented by the circuit device.
In one embodiment, the circuit devices are IGBT modules, the first component device 200 is an IGBT chip, and the second component device 300 is a diode.
If the circuit device is an Insulated Gate Bipolar Transistor (IGBT) module, it may be determined that an IGBT chip and a diode are required to be included, and the IGBT chip and the diode are fixed on the first substrate board 101 by using an electronic solder according to a circuit design and electrically connected.
In one embodiment, the diode is a freewheeling diode.
Because the IGBT module is limited by the structure, a parasitic diode is not arranged in the IGBT module like an MOS (metal oxide semiconductor) transistor, and a follow current diode is arranged to provide a follow current loop for the IGBT module so as to protect the IGBT module in consideration of the problems of follow current and the like in actual use.
In one embodiment, the IGBT chip is a reverse conducting IGBT chip or a reverse blocking IGBT chip.
The P-base region, the N-drift region, the N + buffer layer and the N + short circuit region of the reverse conducting IGBT form a PIN diode. The reverse conducting type IGBT is equivalent to an IGBT and a PIN diode which are connected in anti-parallel, and is realized on the same chip. This PIN diode conducts when the IGBT is subjected to a reverse voltage, which is also called a reverse conducting IGBT. During the turn-off period, the reverse conducting IGBT provides an effective pumping channel for surplus current carriers in the drift region, and the turn-off time of the reverse conducting IGBT is greatly shortened. Compared with the traditional IGBT reverse conducting type IGBT idea, the chip area, the packaging cost and the testing cost are saved, and the device cost is reduced. In addition, it has low loss, positive temperature coefficient, and good soft-off characteristics, short-circuit characteristics, and good power cycle characteristics. Reverse Blocking IGBT chips, namely RB-IGBTs (Reverse Blocking IGBTs), are suitable for ac switching since they incorporate a Reverse diode (in the opposite direction to the freewheeling diode) in the collector circuit. The diode is not connected with a solid reverse diode chip in series, but the ion implantation concentration of a collector side P + layer is properly reduced, the implantation depth is properly deepened to form an equivalent reverse diode, and the IGBT has reverse voltage blocking capability. This reduces the cost compared to integrating a separate, solid diode chip; the board area is reduced compared to connecting a blocking diode in series externally. The skilled person can select as desired.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above examples only represent some embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A circuit device, comprising: a first substrate plate, a first component and a second component;
a conductive layer is arranged on the first substrate plate;
the first component is fixed on the conductive layer of the first substrate plate through electronic solder;
the second component is stacked on the second surface of the first component, the first surface of the second component and the second surface of the first component are fixed through electronic solder, and the second surface of the second component is electrically connected with the conducting layer of the first substrate plate through a bonding aluminum wire.
2. The circuit device of claim 1, wherein the second component comprises a first sub-device and a second sub-device;
the first surface of the first sub-device is fixed with the second surface of the first component device through electronic welding materials;
the first surface of the second sub-device is fixed with the second surface of the first sub-device through electronic solder, and the second surface of the second sub-device is electrically connected with the conductive layer of the first substrate plate through a bonding aluminum wire.
3. The circuit device of claim 1, wherein the electronic solder is a solder paste.
4. The circuit device of claim 1, wherein the first substrate board is a DBC board.
5. The circuit device of claim 1, further comprising a second substrate board;
the second substrate plate is provided with a heat conduction layer, and the heat conduction layer of the second substrate plate is fixedly connected with the second surface of the second component through non-conductive glue.
6. The circuit device of claim 1, wherein the first component comprises any one or more of a chip, a diode, a resistor, a capacitor, and a PCB.
7. The circuit device of claim 6, wherein the second component comprises any one or more of a chip, a diode, a resistor, a capacitor, and a PCB.
8. The circuit device of any of claims 1 to 7, wherein the circuit device is an IGBT module, the first component is an IGBT chip, and the second component is a diode.
9. The circuit device of claim 8, wherein the diode is a freewheeling diode.
10. The circuit device of claim 8, wherein the IGBT chip is a reverse conducting IGBT chip or a reverse blocking IGBT chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201922170023.8U CN210575950U (en) | 2019-12-06 | 2019-12-06 | Circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201922170023.8U CN210575950U (en) | 2019-12-06 | 2019-12-06 | Circuit device |
Publications (1)
Publication Number | Publication Date |
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CN210575950U true CN210575950U (en) | 2020-05-19 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201922170023.8U Active CN210575950U (en) | 2019-12-06 | 2019-12-06 | Circuit device |
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CN (1) | CN210575950U (en) |
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2019
- 2019-12-06 CN CN201922170023.8U patent/CN210575950U/en active Active
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