CN210536007U

CN210536007U - Vertical cavity surface emitting laser

Info

Publication number: CN210536007U
Application number: CN201922213649.2U
Authority: CN
Inventors: 张星
Original assignee: Changchun Zhongke Changguang Space Time Photoelectric Technology Co ltd
Current assignee: Changchun Zhongke Changguang Space Time Photoelectric Technology Co ltd
Priority date: 2019-12-11
Filing date: 2019-12-11
Publication date: 2020-05-15
Anticipated expiration: 2029-12-11

Abstract

The application discloses a vertical cavity surface emitting laser, which comprises a vertical cavity surface emitting laser component, a first insulating layer positioned on the surface of the vertical cavity surface emitting laser component, and a heating component positioned on the upper surface of the first insulating layer; the heating assembly comprises a metal layer, a wiring pad and a lead for connecting the metal layer and the wiring pad; the vertical cavity surface emitting laser component comprises an N-type back electrode, a substrate, an N-surface DBR layer, a protruding structure, a second insulating layer and a P-type injection electrode, wherein the N-type back electrode, the substrate, the N-surface DBR layer and the protruding structure are sequentially distributed from bottom to top, the protruding structure is located in a first preset region of the upper surface of the N-surface DBR layer, the second insulating layer is distributed on the upper surface of the N-surface DBR layer, the first preset region, the side surface of the protruding structure and a second preset region of the upper surface of the protruding structure. The heating assembly has small volume, simple structure and low cost, so that the laser has small volume and can reduce the complexity and the cost.

Description

Vertical cavity surface emitting laser

Technical Field

The present application relates to the field of semiconductor laser technology, and more particularly to a vertical cavity surface emitting laser.

Background

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a Laser with a light-Emitting direction perpendicular to the Surface of a resonant Cavity, has the advantages of small threshold current, small divergence angle, circularly symmetric light spot, easy two-dimensional integration and the like, and is widely applied to the fields of optical interconnection, optical storage, optical communication and the like.

When the VCSEL is applied to an atomic sensor (atomic clock, atomic gyroscope, magnetometer), etc., it is necessary to output laser light of a certain power at a high temperature. In order to ensure that the laser wavelength of the VCSEL meets the requirement of the central wavelength corresponding to the atomic vapor absorption spectral line in the atomic sensor under the working current, the laser wavelength of the VCSEL can be adjusted by adjusting the working temperature of the VCSEL, and the requirement of a system on the laser wavelength is further met. The VCSEL is heated by a separate heating device, the VCSEL is firstly packaged on the surface of a tube shell, then the tube shell with the VCSEL is attached to the heating device, the VCSEL is heated by heating the laser tube shell, and finally the laser wavelength is adjusted according to the temperature drift characteristic (0.06 nm/DEG C) of the VCSEL. The added heating equipment increases the complexity of the system, so that the volume of the system becomes large, the requirements of miniaturization and miniaturization cannot be met, and the added heating equipment is high in cost.

Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.

SUMMERY OF THE UTILITY MODEL

The application aims to provide a vertical cavity surface emitting laser, which can heat up the vertical cavity surface emitting laser, reduce the volume of the vertical cavity surface emitting laser and reduce the cost.

In order to solve the above technical problem, the present application provides a vertical cavity surface emitting laser, including a vertical cavity surface emitting laser component, a first insulating layer located on a surface of the vertical cavity surface emitting laser component, and a heating component located on an upper surface of the first insulating layer;

the heating assembly comprises a metal layer, a wiring pad and a lead wire for connecting the metal layer and the wiring pad; vertical cavity surface emitting laser subassembly includes from supreme N type back electrode, substrate, the N face DBR layer that distributes in proper order down, is located the first protruding structure of predetermineeing the region of N face DBR layer upper surface, and distribute and be in N face DBR layer upper surface removes first predetermineeing the region protruding structure side protruding structure upper surface second predetermines regional second insulating layer, and distributes and be in the electrode is annotated to the P type of second insulating layer surface.

Optionally, the first insulating layer is located on the upper surface of the protruding structure.

Optionally, the first insulating layer is located in a third preset region of the P-type injection electrode, where the third preset region corresponds to a region of the upper surface of the N-plane DBR layer other than the first preset region.

Optionally, the first insulating layer is any one of a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer.

Optionally, the metal layer is a round-trip annular metal layer.

Optionally, the substrate is a gallium arsenide substrate.

The vertical cavity surface emitting laser comprises a vertical cavity surface emitting laser component, a first insulating layer positioned on the surface of the vertical cavity surface emitting laser component, and a heating component positioned on the upper surface of the first insulating layer; the heating assembly comprises a metal layer, a wiring pad and a lead wire for connecting the metal layer and the wiring pad; vertical cavity surface emitting laser subassembly includes from supreme N type back electrode, substrate, the N face DBR layer that distributes in proper order down, is located the first protruding structure of predetermineeing the region of N face DBR layer upper surface, and distributes N face DBR layer upper surface removes the first region of predetermineeing, protruding structure side, protruding structure upper surface second predetermines regional second insulating layer, and distributes and be in the electrode is annotated to the P type of second insulating layer surface.

It can be seen that the vcsel in the present application includes a vcsel module, a first insulating layer and a heating module, wherein the heating module includes a metal layer, a wiring pad and a conductive trace, the vcsel module includes an N-type back electrode, a substrate, an N-type DBR layer, a protrusion structure located in a first predetermined region on an upper surface of the N-type DBR layer, a second insulating layer, and a P-type injection electrode, when the vcsel needs to be increased in temperature, a current is applied to the heating module, the current flows through the metal layer to generate heat energy, the heat energy is diffused from the metal layer to the vcsel module, so as to increase the vcsel temperature, and since the heating module includes the metal layer, the wiring pad and the conductive trace, the entire heating module has a small volume, a simple structure and a low cost, so that the vcsel has a small volume, the development trend of miniaturization is satisfied, and simultaneously the complexity and the manufacturing cost of the vertical cavity surface emitting laser can be reduced.

Drawings

For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser according to an embodiment of the present disclosure;

FIG. 2 is a top view of a VCSEL provided in an embodiment of the present application;

FIG. 3 is a schematic structural diagram of another VCSEL provided in an embodiment of the present application;

FIG. 4 is a top view of another VCSEL provided in an embodiment of the present application;

in the drawing, 1, a vertical cavity surface emitting laser element, 2, a first insulating layer, 3, a heating element, 4, a current injection region, 5, a light exit port, 11, an N-type back electrode, 12, a substrate, 13, an N-side DBR layer, 14, a bump structure, 15, a second insulating layer, 16, a P-type injection electrode, 31, a metal layer, 33, a wiring pad, 32, a wiring, 141, a first spatial layer, 142, an active layer, 143, a second spatial layer, 144, an oxide layer, 145, and a P-side DBR layer are illustrated.

Detailed Description

In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be implemented in other ways different from the specific details set forth herein, and one skilled in the art may similarly generalize the present invention without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.

As described in the background section, heating of VCSELs currently requires heating the VCSELs by a separate heating device, which first packages the VCSELs on the surface of a package, and then attaches the package with the VCSELs to the heating device to heat the VCSELs by heating the laser package. The added heating equipment increases the complexity of the system, so that the volume of the system becomes large, the requirements of miniaturization and miniaturization cannot be met, and the added heating equipment is high in cost.

In view of this, the present application provides a vertical cavity surface emitting laser, please refer to fig. 1, fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser provided in an embodiment of the present application, including a vertical cavity surface emitting laser component 1, a first insulating layer 2 located on a surface of the vertical cavity surface emitting laser component 1, and a heating component 3 located on an upper surface of the first insulating layer 2;

the heating assembly 3 comprises a metal layer 31, a wiring pad 33, and a wire 32 connecting the metal layer 31 and the wiring pad 33; vertical cavity surface emitting laser subassembly 1 includes from supreme N type back electrode 11, substrate 12, the N face DBR layer 13 that distributes in proper order down, is located the first protruding structure 14 of predetermineeing regional of N face DBR layer 13 upper surface, and distribute and be in N face DBR layer 13 upper surface removes first predetermine the region protruding structure 14 side the regional second insulating layer 15 is predetermine to protruding structure 14 upper surface second, and distributes and be in the P type injection electrode 16 of second insulating layer 15 surface.

Specifically, the bump structure 14 includes a first space layer 141, an active layer 142, a second space layer 143, an oxide layer 144, and a P-surface DBR (Distributed Bragg Reflector) layer 145, which are sequentially stacked from bottom to top, and a current injection hole is formed in the oxide layer 144. Wherein, the first and second

spatial layers

141 and 143 may be, but are not limited to, Al_0.3Ga_0.7As。

In the present embodiment, the material of the metal layer 31 is not particularly limited as long as it can generate heat when current is applied. For example, the metal layer 31 may be a copper metal layer 31, or an iron metal layer 31, or the like.

In an embodiment of the present application, the metal layer 31 is a round-trip annular metal layer 31, but the present application is not limited thereto specifically, and in other embodiments of the present application, the metal layer 31 may also be a serpentine metal layer 31.

Further, in this embodiment, the sectional area of the metal layer 31 is not specifically limited, the resistance of the metal layer 31 is inversely proportional to the sectional area of the metal layer 31, the smaller the sectional area is, the larger the resistance of the metal layer 31 is, and when the current flowing into the metal layer 31 is constant, the more heat the metal layer 31 generates, the faster the temperature of the vcsel rises.

It should be noted that the number of the bonding pads 33 and the wires 32 is two, the two wires 32 are respectively connected to two ends of the metal layer 31, and the two bonding pads 33 are respectively connected to the two wires 32 for respectively leading in and leading out the current, because the diameter of the wires 32 is very small, such as a hairline, the current cannot be directly led in and led out, and the bonding pads 33 are needed.

The first insulating layer 2 in this embodiment is provided to separate the metal layer 31 and the electrode of the vcsel module 1 into independent electrical injection systems, so that the vcsel module 1 and the metal layer 31 can be independently powered. Wherein the current injection region 4 of the vertical cavity surface emitting laser assembly 1 is located in the second insulating layer 15.

Optionally, the first insulating layer 2 includes, but is not limited to, any one of a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer. Similarly, the second insulating layer 15 includes, but is not limited to, any one of a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer.

Optionally, in an embodiment of the present application, the substrate 12 is a gallium arsenide substrate 12.

It should be noted that the first predetermined region is generally a middle region of the upper surface of the N-plane DBR layer 13, but this is not limited thereto in the present application, as the case may be. The second predetermined area depends on the position of the first insulating layer 2, and will be described below.

The VCSEL in this embodiment includes a VCSEL component 1, a first insulating layer 2, and a heating component 3, wherein the heating component 3 includes a metal layer 31, a wiring pad 33, and a conductive line 32, the VCSEL component 1 includes an N-type back electrode 11, a substrate 12, an N-side DBR layer 13, a protruding structure 14 located in a first predetermined region on an upper surface of the N-side DBR layer 13, a second insulating layer 15, and a P-type injection electrode 16, when it is desired to raise the VCSEL temperature, a current is applied to the heating component 3, the current generates heat energy when flowing through the metal layer 31, and the heat is diffused from the metal layer 31 into the VCSEL component 1, thereby raising the VCSEL temperature, and since the heating component 3 includes the metal layer 31, the wiring pad 33, and the conductive line 32, the entire heating component 3 has a small volume, The structure is simple, the cost is low, so that the size of the vertical cavity surface emitting laser is small, the development trend of miniaturization is met, and meanwhile, the complexity and the manufacturing cost of the vertical cavity surface emitting laser can be reduced.

Based on the above embodiments, in an embodiment of the present application, the first insulating layer 2 is located on the upper surface of the protruding structure 14, as shown in fig. 1, at this time, the second predetermined area is a semicircular ring at the edge of the upper surface of the circular protruding structure 14, please refer to fig. 2.

On the basis of the above embodiments, in an embodiment of the present application, the first insulating layer 2 is located in a third predetermined region of the P-type injection electrode 16, wherein the third predetermined region corresponds to a region of the upper surface of the N-side DBR layer 13 except for the first predetermined region, as shown in fig. 3, and at this time, the second predetermined region is a ring at the edge of the upper surface of the circular protruding structure 14, please refer to fig. 4.

The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.

The vertical cavity surface emitting laser and the method for manufacturing the same provided by the present application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.

Claims

1. A vertical cavity surface emitting laser is characterized by comprising a vertical cavity surface emitting laser component, a first insulating layer positioned on the surface of the vertical cavity surface emitting laser component, and a heating component positioned on the upper surface of the first insulating layer;

2. A vertical cavity surface emitting laser according to claim 1, wherein said first insulating layer is on said convex structure upper surface.

3. A vertical cavity surface emitting laser according to claim 1, wherein said first insulating layer is located in a third predetermined region of said P-type injection electrode, wherein said third predetermined region corresponds to a region of the upper surface of said N-plane DBR layer other than said first predetermined region.

4. A vertical cavity surface emitting laser according to any one of claims 1 to 3, wherein said first insulating layer is any one of a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer.

5. A vertical cavity surface emitting laser according to claim 4, wherein said metal layer is a round-trip annular metal layer.

6. A vertical cavity surface emitting laser according to claim 5, wherein said substrate is a gallium arsenide substrate.