CN210494221U - High-frequency high-voltage circuit time-sharing multiplexing control device and multi-electrode radio frequency ablation system - Google Patents
High-frequency high-voltage circuit time-sharing multiplexing control device and multi-electrode radio frequency ablation system Download PDFInfo
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- CN210494221U CN210494221U CN201920849797.0U CN201920849797U CN210494221U CN 210494221 U CN210494221 U CN 210494221U CN 201920849797 U CN201920849797 U CN 201920849797U CN 210494221 U CN210494221 U CN 210494221U
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Abstract
A high-frequency high-voltage circuit time-sharing multiplexing control device and a multi-electrode radio frequency ablation system are provided, wherein the high-frequency high-voltage circuit time-sharing multiplexing control device comprises: the control end power supply access end, the on-off square wave controller, the high-speed on-off controller and the high-speed variable reactor; the control end power supply access end is electrically connected to the high-speed on-off controller through the on-off square wave controller, and the on-off square wave controller controls the voltage on-off frequency of the control end power supply access end loaded on the high-speed on-off controller according to the on-off control signal; the high-speed on-off controller is electrically connected with the primary of the high-speed variable reactor and controls the on-off frequency of the current flowing through the primary of the high-speed variable reactor according to the on-off frequency of the voltage; the secondary of the high-speed variable reactor is electrically connected with an alternating current load circuit, the alternating current load circuit is conducted when the primary is conducted with current, and the reactance is generated when the primary is not conducted with current, so that alternating current output by the high-frequency high-voltage alternating current output circuit can be multiplexed on each group of electrodes of the multi-electrode radio frequency ablation system in a time-sharing mode.
Description
Technical Field
The utility model relates to a high frequency high voltage circuit's controlling means and applied this controlling means's electrode radio frequency system of melting especially relate to a multiplexing controlling means of high frequency high voltage circuit timesharing and many electrode radio frequency system of melting.
Background
In the field of medical radiofrequency ablation, the main mechanism of radiofrequency ablation is the thermal effect. The radio frequency is high-frequency high-voltage alternating current with certain frequency, and currently, the medical radio frequency is mostly 300 KHz-4000 KHz. When radio frequency current flows through human tissues, positive ions and negative ions in cells move rapidly due to rapid change of an electromagnetic field, and the friction between the positive ions and the negative ions and other molecules, ions and the like in the cells raises the temperature of an ablation part, so that water inside and outside the cells is evaporated, dried, shrunk and shed, aseptic necrosis is caused, and the purpose of ablating the tissues is achieved.
Theoretically, the electrode with the smaller area can provide larger current density, and can ablate tissues more efficiently and quickly, but in practical clinical application, tissues with a certain interval are often required to be ablated, the interval of the tissues is slightly larger or is several times larger than the area of the ablation electrode, and if the areas of the heart, the tumor, the large blood vessel ligation and the like are larger, the electrode with the smaller area cannot ablate the tissues efficiently and quickly. If the area of the ablation electrode is increased, the current density of the electrode is reduced, and if a better ablation effect is achieved, the output power of the device is increased, for example, the maximum output power of the device is required to be more than 150W due to the use of the large-area electrode in the existing large blood vessel ligation device. In addition, for example, in cardiac ablation and tumor ablation operations, the equipment generally needs to be continuously loaded and operated for tens of seconds or even more than half an hour, and if the area of the electrode of the ablation instrument is increased, the burden of high-voltage components inside the equipment is increased, so that the reliability of the equipment is reduced.
In addition, radio frequency ablation also needs to monitor the impedance change of the ablated tissue in real time, and the ablation effect is judged through the impedance change of the ablated tissue. The use of a larger area of the ablation electrode can increase the area of the electrode contacting the tissue, and simultaneously, the ablation impedance can be correspondingly reduced, thereby influencing the judgment of the ablation impedance. For example, 1 pair of electrodes is originally used as a cardiac ablation electrode, but to ablate tissues with larger intervals, the number of the electrodes needs to be increased to 2 pairs or 3 pairs (equivalent to increasing the area of the electrodes to 2 times or 3 times of the area of 1 pair of electrodes), and multiple pairs of electrodes simultaneously output high-frequency high-voltage alternating current.
Therefore, it is a subject to be urgently needed in the art to develop an electrode radiofrequency ablation device which does not increase the output power of the device, so as to reduce the burden of high-voltage components inside the device, ensure the reliability and the service life of the device, and also does not increase the contact area between an electrode and tissues so as to ensure the accuracy of the ablation impedance judgment.
SUMMERY OF THE UTILITY MODEL
The main technical problem to be solved by the technical scheme is to provide a high-frequency high-voltage circuit time-sharing multiplexing control device and a multi-electrode radio-frequency ablation system, wherein the multi-electrode radio-frequency ablation system can perform time-sharing multiplexing control on high-frequency high-voltage alternating current output through the high-frequency high-voltage circuit time-sharing multiplexing control device, so that a plurality of groups of electrodes with small areas can operate in a time-sharing mode under the operating environment without increasing the output power of equipment, tissues with large intervals or areas can be ablated, and meanwhile, the impedance of the ablated tissues can be accurately judged.
In order to solve the above technical problem, the present technical solution provides a high-frequency high-voltage circuit time-sharing multiplexing control device, which includes: the control end power supply access end, the on-off square wave controller, the high-speed on-off controller and the high-speed variable reactor; the control end power supply access end is used for accessing a power supply of the isolation control end, the control end power supply access end is electrically connected to the high-speed on-off controller through the on-off square wave controller, and the on-off square wave controller controls the voltage on-off frequency of the control end power supply access end loaded on the high-speed on-off controller according to an on-off control signal (such as a square wave control signal); the high-speed on-off controller is electrically connected with the primary side of the high-speed variable reactor and is used for controlling the on-off frequency of the current flowing through the primary side of the high-speed variable reactor according to the on-off frequency of the voltage; the secondary of the high-speed reactor is electrically connected with the AC load circuit, and is conducted when the primary of the high-speed reactor is conducted with current, and generates reactance when the primary of the high-speed reactor is not conducted with current.
As another implementation of the technical solution, the high-speed variable reactor is composed of a magnetic ring body, a primary enameled wire and a secondary enameled wire, wherein the primary enameled wire is uniformly wound on the magnetic ring body to form a primary of the high-speed variable reactor, and the secondary enameled wire is wound on the magnetic ring body to form a secondary of the high-speed variable reactor. Thereby controlling the generation of the reactance of the secondary enamel wire through the operation of switching on and off the current in the primary enamel wire.
As another implementation of the technical solution, the magnetic ring body is made of 36X23X15 mn-zn ferrite, the primary enameled wire has a diameter of 1.0mm and is uniformly wound on the magnetic ring body for 15 turns, and the secondary enameled wire has a diameter of 0.8mm and is uniformly wound on the magnetic ring body for 30 turns.
As another implementation of the technical solution, the high-speed on-off controller is formed by electrically connecting two N-type MOS transistors to two ends of a primary side of the high-speed variable reactor, wherein a positive electrode of a power supply access end of the control end is electrically connected to the on-off square wave controller and then electrically connected to gates of the two N-type MOS transistors, drain electrodes of the two N-type MOS transistors are electrically connected to one end and the other end of the primary side of the high-speed variable reactor, respectively, and source electrodes of the two N-type MOS transistors are electrically connected to a negative electrode of the power supply access end of the control end. According to the characteristics of large current and high speed of the N-type MOS tube, the on-off frequency of voltage (electric field) loaded between the grid electrode and the source electrode of the N-type MOS tube is controlled by the on-off square wave controller, so that the on-off frequency of the current output by the drain electrode of the N-type MOS tube is controlled, and the on-off of the primary medium current of the high-speed reactance device is controlled quickly and stably.
As another implementation of the present technical solution, a diode is electrically connected between the drain and the source of each of the two N-type MOS transistors, wherein the source is electrically connected to the anode of the diode, and the drain is electrically connected to the cathode of the diode. The diode acts as a reverse (current) protection diode inside the N-type MOS tube, and the speed of the diode is basically consistent with the on-off speed of the N-type MOS tube.
As another implementation of the technical scheme, the on-off frequency of the on-off control signal is 50Hz to 1 KHz. That is, the on-off square wave controller controls the primary current of the high-speed variable reactor to be switched on and off 50 to 1000 times per second.
In another embodiment of the present invention, the secondary inductance of the high-speed reactor is 2.5 mH. According to the operating frequency of the radiofrequency ablation device being generally 460KHz, when the primary of the high-speed transformer is open (no current passes through the primary), the secondary of the high-speed transformer is connected in series in the ac load circuit, which corresponds to an inductance of 2.5mH, and the reactance thereof is Z =2 pi fL =2 x 3.14 x 460000 x 2.5/1000=7.2K Ω.
In order to solve the above technical problem, the present technical solution further provides a multi-electrode rf ablation system electrically connected to a high-frequency high-voltage ac output circuit, the multi-electrode rf ablation system including: the device comprises two isolated control end power supplies, at least two groups of high-frequency high-voltage circuit time-sharing multiplexing control devices and at least two groups of ablation electrodes; each group of high-frequency high-voltage circuit time-sharing multiplexing control device comprises two high-frequency high-voltage circuit time-sharing multiplexing control devices; each group of ablation electrodes comprises two ablation electrodes; the two isolated control end power supplies are respectively and correspondingly connected to the control end power access ends of the two high-frequency high-voltage circuit time-sharing multiplexing control devices of each group of high-frequency high-voltage circuit time-sharing multiplexing control device; one output end of the high-frequency high-voltage alternating current output circuit is electrically connected to one secondary end of the high-speed variable reactor of one high-frequency high-voltage circuit time-sharing multiplexing control device of each group of high-frequency high-voltage circuit time-sharing multiplexing control devices, and the other output end of the high-frequency high-voltage alternating current output circuit is electrically connected to one secondary end of the high-speed variable reactor of the other high-frequency high-voltage circuit time-sharing multiplexing control device of each group of high-frequency high-voltage circuit time-sharing multiplexing control devices; each group of ablation electrodes is correspondingly connected with the other ends of the secondary stages of the high-speed variable reactors of the two high-frequency high-voltage circuit time-sharing multiplexing control devices of each group of high-frequency high-voltage circuit time-sharing multiplexing control device.
As another implementation of the present technical solution, the isolation control end power supply is a 12V dc power supply. The power supply (electric field) is used for controlling the on and off of the high-speed on-off controller.
As another implementation of the technical scheme, the square wave phase difference of the on-off control signals of the on-off square wave controller of each group of high-frequency high-voltage circuit time-sharing multiplexing control devices is 360 degrees/the number of groups of high-frequency high-voltage circuit time-sharing multiplexing control devices; the square wave duty ratio of the on-off control signal of the on-off square wave controller of each group of high-frequency high-voltage circuit time-sharing multiplexing control devices is 1/100 percent of the group number of the high-frequency high-voltage circuit time-sharing multiplexing control devices. Therefore, the stable operation of time-sharing multiplexing of the array ablation electrodes of the multi-electrode radio frequency ablation system can be ensured.
This technical scheme is through increasing the quantity of electrode, in order to form multiunit electrode, and through the time sharing multiplex of high frequency high voltage circuit time sharing multiplex controlling means to high frequency high voltage alternating current output circuit, time sharing multiplex on each group of electrode with the high frequency high voltage alternating current of output, the time interval of timesharing is minimum, for more than 50 to 1000 times per second, every timesharing only has a group electrode at work, the current density of output is not influenced, and it is not influenced to melt impedance, macroscopically and effectual be equivalent to multiunit electrode with same high frequency high voltage alternating current timesharing action human tissue. Therefore, the ablation effect of the multiple groups of electrodes which act on the tissue independently can be accumulated, the ablation effect of the multiple groups of electrodes which act on the tissue simultaneously is finally achieved, compared with the situation that the multiple groups of electrodes act on the tissue simultaneously, the power consumption required by time-sharing multiplexing of the multiple groups of electrodes is smaller, the current density is the same as that of one group of electrodes, and the ablation impedance is also the same as that of one group of electrodes, so that the judgment of the ablation effect of the ablation device through the impedance change of the ablation tissue is not influenced.
Drawings
FIG. 1 is a block diagram of the high-frequency high-voltage circuit time-sharing multiplexing control device of the present invention;
fig. 2 is a schematic structural diagram of the high-speed reactor of the present invention;
fig. 3 is a schematic structural diagram of the high-speed on-off controller of the present invention;
FIG. 4 is a schematic diagram of the clockwise flowing of the alternating current in the loop formed by the two N-type MOS transistors and the primary;
FIG. 5 is a schematic diagram of an AC current flowing counterclockwise in a loop formed by two N-type MOS transistors and a primary;
FIG. 6 is a schematic structural view of a multi-electrode RF ablation system having two sets of ablation electrodes;
FIG. 7 is a schematic structural view of a multi-electrode RF ablation system having three sets of ablation electrodes;
FIG. 8 is a waveform diagram of the on-off control signals of each on-off square wave controller in a multi-electrode RF ablation system with two sets of ablation electrodes;
fig. 9 is a waveform diagram of the on-off control signal of each on-off square wave controller in a multi-electrode rf ablation system with three sets of ablation electrodes.
Symbolic illustration in the drawings:
1, controlling a power supply access end; 2, a square wave on-off controller; 3 high-speed on-off controller; a 31 diode; 4 high-speed variable reactor; 41 primary stage; 42, a secondary level; 43 a magnetic ring body; 44 primary enameled wire; 45, secondary enameled wires; y, Y' ablation electrode; an output end of the V1 high-frequency high-voltage alternating current output circuit; the other output end of the V2 high-frequency high-voltage alternating current output circuit; x, X ', X ' ' are connected and disconnected with the control signal.
Detailed Description
The following detailed description and technical contents of the present invention are described with reference to the drawings, but the drawings are only for reference and illustration and are not intended to limit the present invention.
As shown in fig. 1, a specific embodiment of the time-sharing multiplexing control device for a high-frequency high-voltage circuit of the present invention includes a control end power supply access end 1, an on-off square wave controller 2, a high-speed on-off controller 3, and a high-speed variable reactor 4; wherein this control end power incoming end 1 is used as the access isolation control end power (not marked in the figure) the utility model discloses in insert the isolation control end power to this control end power incoming end be 12V's direct current power supply to this is as loading in high-speed on-off controller 3 and control its control power (electric field) that switches on or ends. The control end power supply access end 1 is electrically connected to the high-speed on-off controller 3 through the on-off square wave controller 2, wherein the on-off square wave controller 3 is a waveform signal control device, which is widely applied in the field of electronic device control, therefore, the utility model discloses the structure and model of which are not repeated, the on-off square wave controller 2 controls the voltage on-off frequency of the control end power supply access end 1 loaded on the high-speed on-off controller 3 according to an on-off control signal (such as a square wave control signal); the high-speed on-off controller 3 is electrically connected with the primary side of the high-speed variable reactor 4 and is used for controlling the on-off frequency of the current flowing through the primary side of the high-speed variable reactor 4 according to the on-off frequency of the voltage; in the utility model, the on-off frequency of the on-off control signal is 50Hz to 1KHz, that is, the on-off square wave controller controls the primary current of the high-speed variable reactor to be switched on and off for 50 to 1000 times per second; the secondary of the high-speed reactor is electrically connected with the AC load circuit, and is in a conducting state when the primary of the high-speed reactor is in current conduction, and generates a reactance when the primary of the high-speed reactor is not in current conduction.
More specifically, the high-speed reactor is similar to a transformer, the primary side of which is controlled to be in a short-circuit or open-circuit state, and the secondary side of which is connected in series in an ac circuit, as shown in fig. 2, the high-speed reactor 4 is composed of a magnetic ring body 43, a primary enameled wire 44 uniformly wound on the magnetic ring body 43, and a secondary enameled wire 45, wherein the primary enameled wire 44 wound on the magnetic ring body 43 constitutes the primary side 41 of the high-speed reactor 4, and the secondary enameled wire 45 wound on the magnetic ring body 43 constitutes the secondary side 42 of the high-speed reactor 4. The magnetic ring body 43 is made of 36X23X15 mn-zn ferrite, the primary enameled wire 44 has a diameter of 1.0mm and is uniformly wound on the magnetic ring body 43 for 15 turns, and the secondary enameled wire 45 has a diameter of 0.8mm and is uniformly wound on the magnetic ring body 43 for 30 turns. When the primary 41 is switched on (open) without current, the secondary 42 generates a reactance, which typically varies with the frequency of the ac circuit and causes a change in the phase of the current and voltage in the ac circuit, the reactance being given by the formula: z =2 pi fL, and it is known from the formula that the reactance is proportional to the frequency and the inductance of the alternating current. In the present invention, the inductance of the secondary 42 of the high-speed variable reactor 4 is 2.5mH, and according to the working frequency of the rf ablation device is generally 460KHz, when the primary 41 of the high-speed variable reactor 4 is open (no primary current passes), the secondary 42 of the high-speed variable reactor 4 is connected in series in the ac load circuit, which is equivalent to a 2.5mH inductance connected in series, and the reactance thereof is Z =2 pi fL = 2.14 × 460000 × 2.5/1000=7.2K Ω, and the standard impedance of the rf ablation device is generally 100-; when the primary 41 of the high-speed transformer 4 is in current conduction (short circuit), the reactance of the secondary 42 is very small and can be ignored compared with the standard impedance of the radio frequency ablation equipment, so that the load circuit can divide most of the voltage of the high-frequency high-voltage alternating current.
As shown in fig. 3, the utility model discloses in, this high-speed on-off controller 3 comprises two field effect transistors, specifically constitute for two N type MOS pipe electric connection high speed reactance ware 4 'S elementary 41' S both ends, wherein behind the positive pole electric connection on-off square wave controller of control end power incoming end again with two N type MOS pipe 'S grid G electric connection, two N type MOS pipe' S drain electrode D respectively with high-speed transformer 4 'S elementary 41' S one end and other end electric connection, two N type MOS pipe 'S source S and control end power incoming end' S negative pole GND electric connection. According to the characteristics of large current and high speed of the N-type MOS tube, the on-off frequency (hundreds of times to thousands of times per second) of the voltage (electric field) loaded between the grid G and the source S of the N-type MOS tube is controlled by the on-off control signal of the on-off square wave controller, so that the on-off frequency (current flowing out) of the current output of the drain D of the N-type MOS tube is controlled, and the on-off of the current in the primary 41 of the high-speed transformer reactor 4 is controlled quickly and stably. In addition, a diode 31 is electrically connected between the drain D and the source S of the two N-type MOS transistors, wherein the source S is electrically connected to the anode of the diode 31, and the drain D is electrically connected to the cathode of the diode 31. The diode 31 is used as a reverse protection diode (current) in the N-type MOS tube, and particularly when a high-power N-type MOS tube is selected, the reverse protection diode 31 is arranged in the N-type MOS tube, and the speed of the diode 31 is substantially consistent with the on-off speed of the N-type MOS tube. Specifically, under the control of an on-off control signal (such as a square wave control signal) of the on-off square wave controller, a switching state between a loaded voltage (electric field) and an unloaded voltage is formed between the gate G and the source S of the N-type MOS transistor, so that the current output of the drain D is a switching state between a current output state and a current output state. When a voltage is loaded between the gate G and the source S of the N-type MOS transistor to cause a current to be output from the drain D, the primary 41 of the high-speed reactor 4 is in a conducting state, and an alternating current flows through the secondary 42 of the high-speed reactor 4, and under the action of electromagnetic induction, an alternating current also flows through the primary 41, as shown in fig. 4, which is a schematic diagram that the alternating current flows clockwise in a loop formed by the two N-type MOS transistors and the primary 41, and the current flows out from the negative electrode GND of the control-end power-supply connection terminal, flows through the diode 31 of the upper N-type MOS transistor to the primary 41 of the high-speed reactor 4, then flows back to the negative electrode GND of the control-end power-supply connection terminal after flowing to the lower N-type MOS transistor, so as to form a closed loop, and the voltage drop between the N-type MOS transistor and the diode 31 is small and can be ignored, thus being; as shown in fig. 5, which is a schematic diagram of an alternating current flowing counterclockwise in a loop formed by two N-type MOS transistors and the primary 41, the current flows from the control terminal power supply terminal cathode GND, passes through the diode 31 of the lower N-type MOS transistor to the primary 41 of the high-speed transformer 4, then flows back to the control terminal power supply terminal cathode GND after reaching the upper N-type MOS transistor, so as to form a closed loop, and since the voltage drop between the N-type MOS transistor and the diode 31 is very small and can be ignored, it is equivalent to a short circuit of the primary 41 of the high-speed transformer 4.
The utility model also provides a multi-electrode radiofrequency ablation system, its electric connection is in a high frequency high voltage alternating current output circuit (not marked in the figure), and this multi-electrode radiofrequency ablation system includes: two isolated control end power supplies (not marked in the figure), at least two groups of high-frequency high-voltage circuit time-sharing multiplexing control devices and at least two groups of ablation electrodes; referring to fig. 6 and 7, in order to illustrate two embodiments of the multi-electrode rf ablation system of the present invention, fig. 6 illustrates a multi-electrode rf ablation system having two sets of ablation electrodes, and fig. 7 illustrates a multi-electrode rf ablation system having three sets of ablation electrodes. Each group of high-frequency high-voltage circuit time-sharing multiplexing control device comprises two high-frequency high-voltage circuit time-sharing multiplexing control devices; each set of ablation electrodes includes two ablation electrodes Y, Y'; the two isolation control end power supplies are correspondingly connected to the control end power supply access ends of the two high-frequency high-voltage circuit time-sharing multiplexing control devices of each group of high-frequency high-voltage circuit time-sharing multiplexing control device respectively, in the utility model, no matter how many groups of high-frequency high-voltage circuit time-sharing multiplexing control devices are, only two isolation control end power supplies which are isolated from each other are needed, as shown in fig. 6 and 7, the negative electrodes of the two isolation control end power supplies are represented by GND1 and GND2 respectively; one output end V1 of the high-frequency high-voltage alternating current output circuit is electrically connected with one end of the secondary 42 of the high-speed variable reactor 4 of one high-frequency high-voltage circuit time-sharing multiplexing control device in each group of high-frequency high-voltage circuit time-sharing multiplexing control devices, and the other output end V2 of the high-frequency high-voltage alternating current output circuit is electrically connected with one end of the secondary 42 of the high-speed variable reactor 4 of the other high-frequency high-voltage circuit time-sharing multiplexing control device in each group of high-frequency high-voltage circuit time-sharing multiplexing control; each group of ablation electrodes (two ablation electrodes Y, Y') is correspondingly connected to the other end of the secondary 42 of the high-speed variable reactor 4 of the two high-frequency high-voltage circuit time-sharing multiplexing control devices of each group of high-frequency high-voltage circuit time-sharing multiplexing control devices.
As shown in fig. 8, it is a waveform diagram of the on-off control signal of each on-off square wave controller in the multi-electrode rf ablation system with two sets of ablation electrodes, wherein the on-off control signal X is the on-off control signal for controlling the first set of high-frequency high-voltage circuit time-sharing multiplexing control device, and the on-off control signal X' is the on-off control signal for controlling the second set of high-frequency high-voltage circuit time-sharing multiplexing control device; fig. 9 is a waveform diagram of on-off control signals of each on-off square wave controller in a multi-electrode rf ablation system with three sets of ablation electrodes, where the on-off control signal X is an on-off control signal for controlling a first set of high-frequency high-voltage circuit time-sharing multiplexing control device, the on-off control signal X' is an on-off control signal for controlling a second set of high-frequency high-voltage circuit time-sharing multiplexing control device, the on-off control signal X ″ is an on-off control signal for controlling a third set of high-frequency high-voltage circuit time-sharing multiplexing control device, and the primary of the high-speed varactor is in a short-circuit state at a high level in the waveform, which is; and when the voltage is low, the primary stage of the high-speed variable reactor is in an open circuit state, and equivalently, the output circuit and the ablation electrode are in an open circuit. The square wave phase difference of the on-off control signals of the on-off square wave controller of each group of high-frequency high-voltage circuit time-sharing multiplexing control devices is 360 degrees/the number of groups of high-frequency high-voltage circuit time-sharing multiplexing control devices; the square wave duty ratio of the on-off control signals of the on-off square wave controller of each group of high-frequency high-voltage circuit time-sharing multiplexing control device is 1/the group number of the high-frequency high-voltage circuit time-sharing multiplexing control device is 100%, namely the on-off control signals X and X 'of the two groups of ablation electrodes are 2 square waves with a 180-degree difference, the duty ratio of the waveform is 50%, the on-off control signals X, X' and X '' of the three groups of ablation electrodes are 3 square waves with a 120-degree difference, the duty ratio of the waveform is 33.33%, and so on, the on-off control signals of the N groups of ablation electrodes have a (360/N) degree difference, and the duty ratio of the waveform is 1/N100%. Therefore, the stable operation of time-sharing multiplexing of the array ablation electrodes of the multi-electrode radio frequency ablation system can be ensured.
The utility model discloses a multiplexing controlling means of high frequency high voltage circuit timesharing carries out timesharing multiplex to high frequency high voltage alternating current output, in order to multiplex when the high frequency high voltage alternating current that exports on each group's electrode, the time interval of timesharing is minimum, for every second more than 50 times to 1000 times, only a set of electrode is in work for every timesharing, the multiunit electrode that the timesharing is multiplexed is done the work evenly to the treatment tissue, and the current density that each group's electrode exported is not influenced, and it is not influenced to melt the impedance, act on human tissue macroscopically and in effect with same high frequency high voltage alternating current timesharing in multi. Therefore, the ablation effect of the multiple groups of electrodes which act on the tissue independently can be accumulated, the ablation effect of the multiple groups of electrodes which act on the tissue simultaneously is finally achieved, compared with the situation that the multiple groups of electrodes act on the tissue simultaneously, the power consumption required by time-sharing multiplexing of the multiple groups of electrodes is smaller, the current density is the same as that of one group of electrodes, and the ablation impedance is also the same as that of one group of electrodes, so that the judgment of the ablation effect of the ablation device through the impedance change of the ablation tissue is not influenced.
It only does to go up the preferred embodiment of the utility model discloses a not be used for injecing the utility model discloses a patent range, other applications the utility model discloses an equivalent change that the patent idea was done all should belong to the patent protection scope of the utility model.
Claims (10)
1. A time division multiplexing control device for a high-frequency high-voltage circuit is characterized by comprising: the control end power supply access end, the on-off square wave controller, the high-speed on-off controller and the high-speed variable reactor; the control end power supply access end is electrically connected to the high-speed on-off controller through the on-off square wave controller, and the on-off square wave controller controls the voltage on-off frequency of the control end power supply access end loaded on the high-speed on-off controller according to an on-off control signal; the high-speed on-off controller is electrically connected with the primary of the high-speed variable reactor and is used for controlling the on-off frequency of the current flowing through the primary of the high-speed variable reactor according to the on-off frequency of the voltage; the secondary of the high-speed reactor is electrically connected with an alternating current load circuit, and is conducted when the primary of the high-speed reactor is conducted with current, and generates reactance when the primary of the high-speed reactor is not conducted with current.
2. The time-sharing multiplexing control device for the high-frequency high-voltage circuit according to claim 1, wherein the high-speed transformer reactor comprises a magnetic ring body, a primary enameled wire uniformly wound on the magnetic ring body, and a secondary enameled wire, wherein the primary enameled wire wound on the magnetic ring body forms a primary of the high-speed transformer reactor, and the secondary enameled wire wound on the magnetic ring body forms a secondary of the high-speed transformer reactor.
3. The time-sharing multiplexing control device for the high-frequency high-voltage circuit according to claim 2, wherein the magnetic ring body is made of a manganese-zinc ferrite of 36X23X15, the primary enameled wire has a diameter of 1.0mm and is uniformly wound on the magnetic ring body for 15 turns, and the secondary enameled wire has a diameter of 0.8mm and is uniformly wound on the magnetic ring body for 30 turns.
4. The high-frequency high-voltage circuit time-sharing multiplexing control device according to claim 1, wherein the high-speed on-off controller is formed by electrically connecting two N-type MOS transistors to two ends of a primary side of the high-speed variable reactor, wherein a positive electrode of the control-side power supply input terminal is electrically connected to the on-off square-wave controller and then electrically connected to gates of the two N-type MOS transistors, drains of the two N-type MOS transistors are electrically connected to one end and the other end of the primary side of the high-speed variable reactor, respectively, and sources of the two N-type MOS transistors are electrically connected to a negative electrode of the control-side power supply input terminal.
5. The time-sharing multiplexing control device for the high-frequency high-voltage circuit according to claim 4, wherein a diode is electrically connected between the drain and the source of each of the two N-type MOS transistors, wherein the source is electrically connected to the anode of the diode, and the drain is electrically connected to the cathode of the diode.
6. The time-sharing multiplexing control device of the high-frequency high-voltage circuit according to claim 1, wherein the on-off frequency of the on-off control signal is 50Hz to 1 KHz.
7. The time-sharing multiplexing control apparatus for high-frequency high-voltage circuit according to claim 1, wherein the inductance of the secondary side of the high-speed transformer is 2.5 mH.
8. A multi-electrode RF ablation system electrically connected to a high-frequency high-voltage AC output circuit, comprising: two isolated control end power supplies, at least two groups of high-frequency high-voltage circuit time-sharing multiplexing control devices according to any one of claims 1 to 7 and at least two groups of ablation electrodes; each group of high-frequency high-voltage circuit time-sharing multiplexing control devices comprises two high-frequency high-voltage circuit time-sharing multiplexing control devices; each set of the ablation electrodes comprises two ablation electrodes; the two isolated control end power supplies are respectively and correspondingly connected to the control end power supply access ends of the two high-frequency high-voltage circuit time-sharing multiplexing control devices of each group of high-frequency high-voltage circuit time-sharing multiplexing control device; one output end of the high-frequency high-voltage alternating current output circuit is electrically connected to one secondary end of a high-speed variable reactor of one high-frequency high-voltage circuit time-sharing multiplexing control device of each group of high-frequency high-voltage circuit time-sharing multiplexing control devices, and the other output end of the high-frequency high-voltage alternating current output circuit is electrically connected to one secondary end of a high-speed variable reactor of the other high-frequency high-voltage circuit time-sharing multiplexing control device of each group of high-frequency high-voltage circuit time-sharing multiplexing control devices; each group of the ablation electrodes is correspondingly connected to the other ends of the secondary stages of the high-speed variable reactors of the two high-frequency high-voltage circuit time-sharing multiplexing control devices of each group of the high-frequency high-voltage circuit time-sharing multiplexing control devices.
9. The multi-electrode radiofrequency ablation system of claim 8, wherein the isolated control terminal power source is a 12V dc power source.
10. The multi-electrode radio frequency ablation system according to claim 8, wherein the square wave phase difference of the on-off control signals of the on-off square wave controllers of each group of the high-frequency high-voltage circuit time-sharing multiplexing control devices is 360 degrees/the number of groups of the high-frequency high-voltage circuit time-sharing multiplexing control devices; the square wave duty ratio of the on-off control signal of the on-off square wave controller of each group of the high-frequency high-voltage circuit time-sharing multiplexing control device is 1/100 percent of the group number of the high-frequency high-voltage circuit time-sharing multiplexing control device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682742A (en) * | 2020-07-14 | 2020-09-18 | 江苏海莱新创医疗科技有限公司 | MOSFET-Based Transduction Topologies |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682742A (en) * | 2020-07-14 | 2020-09-18 | 江苏海莱新创医疗科技有限公司 | MOSFET-Based Transduction Topologies |
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