CN210490452U - IPM over-temperature protection circuit, module and system for flywheel energy storage device - Google Patents
IPM over-temperature protection circuit, module and system for flywheel energy storage device Download PDFInfo
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- CN210490452U CN210490452U CN201921507818.7U CN201921507818U CN210490452U CN 210490452 U CN210490452 U CN 210490452U CN 201921507818 U CN201921507818 U CN 201921507818U CN 210490452 U CN210490452 U CN 210490452U
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Abstract
The utility model relates to an IPM protection circuit technical field, concretely relates to IPM excess temperature protection circuit, module and system for flywheel energy memory. Wherein, this IPM excess temperature protection system is applicable to 1500V's subway track and 200 KW's flywheel energy memory, and IPM excess temperature protection system includes: the IPM over-temperature protection module comprises an IPM over-temperature protection module, a signal generation module, an IPM module and a circuit driving module, wherein the circuit driving module is respectively connected with the IPM module, the signal generation module and the IPM over-temperature protection module, the signal generation module generates and outputs a first pulse signal and a second pulse signal, and the circuit driving module controls whether the first pulse signal and the second pulse signal are transmitted to the IPM module according to the over-temperature protection signal output by the IPM over-temperature protection module. Through the mode, when the IPM module is over-temperature, the pulse signals are blocked to be continuously transmitted, so that the IPM module cannot be transmitted to the IPM module, the purpose of protecting the IPM module is achieved, compared with the MCU controller, the device structure is simplified, and the safety and the accuracy of the system are improved.
Description
Technical Field
The utility model relates to an IPM protection circuit technical field, concretely relates to IPM excess temperature protection circuit, module and system for flywheel energy memory.
Background
IPM (intelligent power module) is an advanced new type of power switching device, which has the advantages of GTR (large power transistor) high current density, low saturation voltage and high voltage resistance, as well as the advantages of MOSFET (field effect transistor) high input impedance, high switching frequency and low driving power. Logic, control, detection and protection circuits are integrated in the IPM, the IPM is convenient to use and wide in application range, the size and the development time of a system are reduced, the reliability of the system is greatly enhanced, the IPM is suitable for the development direction of the current power devices, such as modularization, recombination and Power Integrated Circuit (PIC), and the IPM draws more and more extensive attention in the field of power electronics.
The IPM is taken as an important component of a control system, and the handling and protection of the abnormal working state of the IPM are particularly paid attention to in the using process, but the current protection circuit is implemented by sampling direct current bus voltage, temperature and current signals inside the IPM module and transmitting the signals to a main controller MCU (microprogrammed control unit), programming the MCU, comparing and analyzing the sampled data, and further judging whether the circuit has over-current, over-temperature and other conditions, if so, the MCU sends a blocking signal. The method needs the combination of software and hardware, increases the difficulty and workload of development, and increases the cost because the price of the MCU is higher than that of other electronic components.
Accordingly, it is an urgent technical problem in the art to provide a new IPM over-temperature protection circuit, module and system for flywheel energy storage device to overcome the above drawbacks of the prior art.
Disclosure of Invention
An object of the utility model is to provide an IPM excess temperature protection circuit, module and system for flywheel energy memory to the above-mentioned defect of prior art.
The purpose of the utility model can be realized by the following technical measures:
the embodiment of the utility model provides a IPM excess temperature protection circuit for flywheel energy memory, this IPM excess temperature protection circuit is connected with the IPM module, be equipped with first IGBT subassembly and second IGBT subassembly in the IPM module, be equipped with first temperature sensor on the first IGBT subassembly, be equipped with second temperature sensor on the second IGBT subassembly, first temperature sensor is used for gathering the temperature of first IGBT subassembly, second temperature sensor is used for gathering the temperature of second IGBT subassembly, and this IPM excess temperature protection circuit includes: the signal input circuit module, the signal comparison circuit module and the signal output circuit module are connected in sequence;
the signal input circuit module comprises a first comparison chip, a first voltage division circuit and a second voltage division circuit, wherein one end of the first voltage division circuit is connected with the first temperature sensor, the other end of the first voltage division circuit is connected with the negative electrode input end of the first comparison chip, one end of the second voltage division circuit is connected with the second temperature sensor, the other end of the second voltage division circuit is connected with the positive electrode input end of the first comparison chip, the output end of the first comparison chip is connected with the signal comparison circuit module, the first voltage division circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage division circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value with the second voltage value, and the smaller voltage value of the first voltage value and the second voltage value is used as an input voltage value, and transmitting to the signal comparison circuit module;
the signal comparison circuit module compares the input voltage value with a preset voltage value, and the signal output circuit module outputs an over-temperature protection signal according to a comparison result of the signal comparison circuit module.
According to the utility model discloses an embodiment, signal input circuit module is still including locating the analog switch of the output of first comparison chip, analog switch include with the signal input part that the output of first comparison chip is connected, with the signal output part that signal comparison circuit module is connected, connect in the negative pole input of first comparison chip with first input between the first divider circuit and connect in the positive input of first comparison chip with second input between the second divider circuit.
According to the utility model discloses an embodiment, first divider circuit includes first resistance and second resistance, the one end of first resistance, the one end of second resistance and the negative pole input of first comparison chip is interconnected, the other end of first resistance with first temperature sensor connects, and the other end and the reference voltage generator of second resistance are connected.
According to the utility model discloses an embodiment, the second divider circuit includes third resistance and fourth resistance, the one end of third resistance, the one end of fourth resistance and the positive input end of first comparison chip interconnects, the other end of third resistance with second temperature sensor connects, and the other end and the reference voltage generator of fourth resistance are connected.
According to the utility model discloses an embodiment, signal comparison circuit module includes second comparison chip and regulating circuit, the positive input end and the regulating circuit of second comparison chip are connected, the negative pole input of second comparison chip with signal output part connects, the output of second comparison chip with signal output circuit module connects, the second comparison chip will input voltage value with the preset voltage value of regulating circuit output compares, and output comparison result gives signal output circuit module.
According to the utility model discloses an embodiment, the regulating circuit includes fifth resistance, sixth resistance, the positive pole input end of second comparison chip is interconnected with the one end of fifth resistance, the one end of sixth resistance, and the other end ground connection of fifth resistance, the other end and the reference voltage generator of sixth resistance are connected.
According to the utility model discloses an embodiment, signal output circuit module is including two NOT gate chips of establishing ties in proper order.
An embodiment of the utility model provides an IPM excess temperature protection module for flywheel energy memory, IPM excess temperature protection module include IPM excess temperature protection circuit.
The embodiment of the utility model provides an IPM excess temperature protection system for flywheel energy memory, IPM excess temperature protection system includes: the IPM over-temperature protection module, the signal generation module and the line driving module are respectively connected with the IPM module, the signal generation module and the IPM over-temperature protection module, the signal generation module is used for generating and outputting a first pulse signal and a second pulse signal, when the over-temperature protection signal output by the IPM over-temperature protection module is in a low level state, the line driving module controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM module, and when the over-temperature protection signal output by the IPM over-temperature protection module is in a high level state, the line driving module controls to block the first pulse signal and the second pulse signal from being transmitted to the IPM module.
According to the utility model discloses an embodiment, the circuit drive module includes signal input pin, enable pin and signal output pin, enable pin with IPM excess temperature protection module connects, input pin with the signal generation module is connected, output pin with the IPM module is connected, works as when excess temperature protection signal is in the low level state, first pulse signal and second pulse signal pass through enable pin transmits the IPM module, works as when excess temperature protection signal is in the high level state, enable pin blocks first pulse signal and second pulse signal transmit the IPM module.
The IPM over-temperature protection circuit, the module and the system for the flywheel energy storage device of the utility model are all composed of hardware, compared with a system combining software and hardware, the safety and the accuracy of the system are improved, and the information processing efficiency is also obviously improved; through the mode, when the temperature of the IGBT assembly is over-temperature, the pulse signals are blocked to be continuously transmitted, the IPM module cannot be transmitted, the purpose of protecting the IGBT assembly is achieved, the line driving module serves as a switch, the over-temperature protection signals are output to the line driving module, the first pulse signals and the second pulse signals are controlled to pass/be blocked according to the level state of the over-temperature protection signals, compared with the MCU controller, the device structure is simplified, peripheral circuits required by the MCU controller are reduced, meanwhile, software programming is not needed, and the task amount and the development difficulty of system development are reduced.
Drawings
Fig. 1 is a schematic structural diagram of an IPM over-temperature protection circuit for a flywheel energy storage device according to the present invention.
Fig. 2 is a schematic structural diagram of the IPM over-temperature protection system for a flywheel energy storage device according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the following, many aspects of the present invention will be better understood with reference to the drawings. The components in the drawings are not necessarily to scale. Instead, emphasis is placed upon clearly illustrating the components of the present invention. Moreover, in the several views of the drawings, like reference numerals designate corresponding parts.
The word "exemplary" or "illustrative" as used herein means serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" or "illustrative" is not necessarily to be construed as preferred or advantageous over other embodiments. All of the embodiments described below are exemplary embodiments provided to enable persons skilled in the art to make and use the examples of the disclosure and are not intended to limit the scope of the disclosure, which is defined by the claims. In other instances, well-known features and methods have been described in detail so as not to obscure the invention. For purposes of the description herein, the terms "upper," "lower," "left," "right," "front," "rear," "vertical," "horizontal," and derivatives thereof shall relate to the invention as oriented in fig. 1. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description. It is also to be understood that the specific devices and processes illustrated in the attached drawings, and described in the following specification are simply exemplary embodiments of the inventive concepts defined in the appended claims. Hence, specific dimensions and other physical characteristics relating to the embodiments disclosed herein are not to be considered as limiting, unless the claims expressly state otherwise.
The utility model provides a IPM overtemperature protection circuit for flywheel energy storage device, fig. 1 is a structural schematic diagram of IPM overtemperature protection circuit for flywheel energy storage device, please see fig. 1, this IPM overtemperature protection circuit is connected with IPM module 10, be equipped with first IGBT subassembly (not shown in the figure) and second IGBT subassembly (not shown in the figure) in IPM module 10, be equipped with first temperature sensor 20 on the first IGBT subassembly, be equipped with second temperature sensor 30 on the second IGBT subassembly, first temperature sensor 20 is used for gathering the temperature of first IGBT subassembly, second temperature sensor 30 is used for gathering the temperature of second IGBT subassembly, this IPM overtemperature protection circuit includes: the signal input circuit module 40, the signal comparison circuit module 50 and the signal output circuit module 60 are connected in sequence.
The signal input circuit module 40 includes a first comparison chip 401, a first voltage dividing circuit 402, and a second voltage dividing circuit 403, the first comparison chip 401 is connected to ground and to the reference voltage generator, one end of the first voltage dividing circuit 402 is connected to the first temperature sensor 20, the other end of the first voltage dividing circuit 402 is connected to the negative input terminal of the first comparison chip 401, one end of the second voltage dividing circuit 403 is connected to the second temperature sensor 30, the other end of the second voltage dividing circuit 403 is connected to the positive input terminal of the first comparison chip 401, the output terminal of the first comparison chip 401 is connected to the signal comparison circuit module 50, the first voltage dividing circuit 402 outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage dividing circuit 403 outputs a second voltage value corresponding to the temperature of the second IGBT component, the first voltage value and the second voltage value are collected and compared by the first comparison chip 401, the smaller voltage value of the first voltage value and the second voltage value is used as an input voltage value and is transmitted to the signal comparison circuit module 50; the signal comparison circuit module 50 compares the input voltage value with a preset voltage value, and the signal output circuit module 60 outputs an over-temperature protection signal according to the comparison result of the signal comparison circuit module 50.
In the present embodiment, by directly detecting the temperature of the IGBT component, which is equivalent to detecting the temperature of the IPM module 10, the first temperature sensor 20 and the second temperature sensor 30 are equivalent to thermistors, the voltage value at TP1 is a first voltage value, the voltage value at TP2 is a second voltage value, when the temperature of the first IGBT component increases, the resistance value of the first temperature sensor 20 decreases, and the voltage value at TP1 decreases as the resistance value of the first temperature sensor 20 decreases, that is, the voltage value of TP1 is in inverse proportion to the temperature of the first IGBT component; when the temperature of the second IGBT component increases, the resistance value of the second temperature sensor 30 decreases, and the voltage value at TP2 decreases as the resistance value of the second temperature sensor 30 decreases, i.e., the voltage value of TP2 is inversely proportional to the temperature of the second IGBT component.
Further, referring to fig. 1, the signal input circuit module 40 further includes an analog switch 404 disposed at the output end of the first comparing chip 401, where the analog switch 404 includes a signal input end (i.e., Vin end) connected to the output end of the first comparing chip 401, a signal output end (i.e., OUT end) connected to the signal comparing circuit module 50, a first input end (i.e., NO end) connected between the negative input end of the first comparing chip 401 and the first voltage dividing circuit 402, and a second input end (i.e., NC end) connected between the positive input end of the first comparing chip 401 and the second voltage dividing circuit 403. The analog switch 404 further includes a ground terminal (i.e., a GND terminal) and a power terminal (i.e., a Vcc terminal) connected to a reference voltage generator.
In this embodiment, when the first voltage value is greater than the second voltage value, the first comparing chip 401 outputs a low level to the analog switch 404, and when the signal input terminal is in a low level state, the signal output terminal is connected to the second input terminal, and the second voltage value is transmitted to the signal comparing circuit module 50 as an input voltage value; when the first voltage value is smaller than the second voltage value, the first comparing chip 401 outputs a high level to the analog switch 404, and when the signal input terminal is in a high level state, the signal output terminal is connected to the first input terminal, and the first voltage value is transmitted to the signal comparing circuit module 50 as an input voltage value.
Further, the first voltage dividing circuit 402 includes a first resistor 4021 and a second resistor 4022, one end of the first resistor 4021, one end of the second resistor 4022, and a negative input terminal of the first comparison chip 401 are interconnected, the other end of the first resistor 4021 is connected to the first temperature sensor 20, and the other end of the second resistor 4022 is connected to the reference voltage generator.
Further, the second voltage-dividing circuit 403 includes a third resistor 4031 and a fourth resistor 4032, one end of the third resistor 4031, one end of the fourth resistor 4032, and the positive input end of the first comparison chip 401 are interconnected, the other end of the third resistor 4031 is connected to the second temperature sensor 30, and the other end of the fourth resistor 4032 is connected to the reference voltage generator.
Further, the signal comparison circuit module 50 includes a second comparison chip 501 and an adjustment circuit 502, the second comparison chip 501 is grounded and connected to the reference voltage generator, an anode input terminal of the second comparison chip 501 is connected to the adjustment circuit 502, a cathode input terminal of the second comparison chip 501 is connected to the signal output terminal, an output terminal of the second comparison chip 501 is connected to the signal output circuit module 60, the second comparison chip 501 compares the input voltage value with the preset voltage value output by the adjustment circuit 502, and outputs the comparison result to the signal output circuit module 60. When the input voltage value is greater than or equal to the preset voltage value, the second comparison chip 501 outputs a low level to the signal output circuit module 60, and when the input voltage value is less than the preset voltage value, the second comparison chip 501 outputs a high level to the signal output circuit module 60.
Further, the adjusting circuit 502 includes a fifth resistor 5021 and a sixth resistor 5022, the positive input terminal of the second comparing chip 501 is interconnected with one end of the fifth resistor 5021 and one end of the sixth resistor 5022, the other end of the fifth resistor 5021 is grounded, and the other end of the sixth resistor 5022 is connected with the reference voltage generator. The adjusting circuit 502 adjusts the output voltage (the voltage value at TP 3) of the adjusting circuit 502 to a voltage value corresponding to the over-temperature (i.e., a preset voltage value) by adjusting the fifth resistor 5021 and the sixth resistor 5022.
Further, the signal output circuit module 60 includes two not chips 601 connected in series in sequence. The not-gate chip 601 is configured to enhance and stabilize a level signal, when the second comparison chip 501 outputs a low level to the signal output circuit module 60, the over-temperature protection signal output by the signal output circuit module 60 is a low level after enhancement and stabilization, which indicates that the signal is normal, and when the second comparison chip 501 outputs a high level to the signal output circuit module 60, the over-temperature protection signal output by the signal output circuit module 60 is a high level after enhancement and stabilization, which indicates that the signal is abnormal.
The embodiment of the utility model provides a IPM excess temperature protection module for flywheel energy memory, IPM excess temperature protection module include above-mentioned IPM excess temperature protection circuit, and IPM excess temperature protection circuit has carried out detailed description in the aforesaid, no longer gives unnecessary details here.
The embodiment of the utility model provides a IPM excess temperature protection system for flywheel energy memory, this IPM excess temperature protection system is applicable to 1500V's subway track and 200 KW's flywheel energy memory. FIG. 2 is a schematic structural diagram of an IPM over-temperature protection system for a flywheel energy storage device, referring to FIG. 2, the IPM over-temperature protection system includes: the IPM over-temperature protection module 1, the signal generation module 2, the IPM module 3 and the line driving module 4, the line driving module 4 is respectively connected to the IPM module 3, the signal generation module 2 and the IPM over-temperature protection module 1, the signal generation module 2 is configured to generate and output a first pulse signal and a second pulse signal, when the over-temperature protection signal output by the IPM over-temperature protection module 1 is in a low level state, the line driving module 4 controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM module 3, and when the over-temperature protection signal output by the IPM over-temperature protection module 1 is in a high level state, the line driving module 4 controls to block the first pulse signal and the second pulse signal from being transmitted to the IPM module 3.
Further, the line driving module 4 includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the IPM over-temperature protection module 1, the input pin is connected to the signal generation module 2, the output pin is connected to the IPM module 3, when the over-temperature protection signal is in a low level state, the first pulse signal and the second pulse signal are transmitted to the IPM module 3 through the enable pin, and when the over-temperature protection signal is in a high level state, the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM module 3.
The IPM over-temperature protection circuit, the module and the system for the flywheel energy storage device of the utility model are all composed of hardware, compared with a system combining software and hardware, the safety and the accuracy of the system are improved, and the information processing efficiency is also obviously improved; through the mode, when the IPM module 3 is over-temperature, the pulse signal is blocked to be continuously transmitted, so that the pulse signal cannot be transmitted to the IPM module 3, the purpose of protecting an IGBT assembly on the IPM module 3 is achieved, the line driving module 4 serves as a switch, the over-temperature protection signal is output to the line driving module 4, the first pulse signal and the second pulse signal are controlled to pass/be blocked according to the level state of the over-temperature protection signal, compared with the MCU controller, the device structure is simplified, peripheral circuits required by the MCU controller are reduced, software programming is not needed, and the task amount and the development difficulty of system development are reduced.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921507818.7U CN210490452U (en) | 2019-09-10 | 2019-09-10 | IPM over-temperature protection circuit, module and system for flywheel energy storage device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921507818.7U CN210490452U (en) | 2019-09-10 | 2019-09-10 | IPM over-temperature protection circuit, module and system for flywheel energy storage device |
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| CN210490452U true CN210490452U (en) | 2020-05-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110601146A (en) * | 2019-09-10 | 2019-12-20 | 沈阳微控新能源技术有限公司 | IPM over-temperature protection circuit, module and system for flywheel energy storage device |
-
2019
- 2019-09-10 CN CN201921507818.7U patent/CN210490452U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110601146A (en) * | 2019-09-10 | 2019-12-20 | 沈阳微控新能源技术有限公司 | IPM over-temperature protection circuit, module and system for flywheel energy storage device |
| CN110601146B (en) * | 2019-09-10 | 2024-12-31 | 沈阳微控飞轮技术股份有限公司 | IPM over-temperature protection circuit, module and system for flywheel energy storage device |
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Address after: 110027 Shenyang Economic and Technological Development Zone, Shenyang City, Liaoning Province, China, No. 197-1, Kaifa 22nd Road Patentee after: Shenyang Micro Control Flywheel Technology Co.,Ltd. Country or region after: China Address before: No. 91-Z16, Development 25th Road, Shenyang Economic and Technological Development Zone, Liaoning Province, China 110000 Patentee before: SHENYANG VYCON NEW ENERGY TECHNOLOGY Co.,Ltd. Country or region before: China |
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Granted publication date: 20200508 Effective date of abandoning: 20241231 |
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