CN210349840U

CN210349840U - Optical sensor

Info

Publication number: CN210349840U
Application number: CN201921364480.4U
Authority: CN
Inventors: 范成至; 黄振昌; 傅同龙; 黄郁湘
Original assignee: Egis Technology Inc
Current assignee: Egis Technology Inc
Priority date: 2018-08-21
Filing date: 2019-08-21
Publication date: 2020-04-17
Anticipated expiration: 2029-08-21
Also published as: WO2020038408A1; CN211045441U; CN110473887A

Abstract

The utility model provides an optical sensor. The optical sensor includes: a substrate having a plurality of sensing pixels arranged in an array; the first transparent medium layer is positioned above the substrate; and a plurality of micro lenses arranged in an array and positioned on or above the first transparent medium layer. The micro lenses respectively enable a plurality of parallel normal incidence lights entering the micro lenses from the outside to enter the inner part of a part or all of the total number of sensing pixels through the first transparent medium layer, and enable a plurality of parallel oblique incidence lights entering the micro lenses from the outside to enter the outer part of the part or all of the total number of the sensing pixels, so that the image of the target object is sensed. The target object generates parallel forward incident light and parallel oblique incident light, the forward incident light is parallel to a plurality of optical axes of the micro lens, and an angle is formed between each oblique incident light and each optical axis.

Description

Optical sensor

Technical Field

The utility model relates to an optical sensor (sensing) ware and optical sensing system, in particular to optical sensor of utensil Controllable Angle collimation structure (Angle Controllable colloid) and applied this optical sensor's optical sensing system.

Background

Today's mobile electronic devices (e.g., mobile phones, tablet computers, notebook computers, etc.) are often equipped with user biometric systems, including various technologies such as fingerprints, facial shapes, irises, etc., for protecting personal data security, wherein, the mobile payment device is applied to portable devices such as mobile phones, smart watches and the like, and also has the function of mobile payment, the biometric identification of the user becomes a standard function, and the development of portable devices such as mobile phones is more toward the trend of full screen (or ultra-narrow frame), so that the conventional capacitive fingerprint keys (for example, the keys from iphone 5 to iphone 8) can no longer be used, and a new miniaturized optical imaging device (very similar to the conventional camera module, having a Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor (CIS)) Sensor element and an optical lens module) is developed. The miniaturized optical imaging device is disposed below a screen (which may be referred to as under the screen), and can capture an image of an object pressed on the screen, particularly a Fingerprint image, through partial Light transmission of the screen (particularly an Organic Light Emitting Diode (OLED) screen), which may be referred to as under-screen Fingerprint sensing (FOD).

Such a known miniaturized optical imaging device is designed to have a thickness of more than 3mm after being formed into a module, and the module is located to overlap with a portion of the area of the battery of the mobile phone in order to meet the habit of pressing the location by a user, so that the size of the battery must be reduced to make room for the miniaturized optical imaging device. Therefore, the battery of the mobile phone can not be used for a long time. In addition, since the power consumption of the new 5G mobile phone is larger in the future, the weight of the battery is more important.

Therefore, how to provide an ultra-thin optical imaging device, especially, the space of the battery may not be sacrificed, and the ultra-narrow region (<0.5mm) between the battery and the screen may be disposed, which is the key point of the present invention.

SUMMERY OF THE UTILITY MODEL

An object of the present invention is to provide an optical sensor having a controllable angle collimation structure, an optical sensing system using the optical sensor, and a method for manufacturing the optical sensing system, so as to eliminate unnecessary stray light, and effectively reduce the thickness of the optical sensor for being applied to the optical sensing system.

To achieve the above object, an embodiment of the present invention provides an optical sensor, including: a substrate having a plurality of sensing pixels arranged in an array; the first transparent medium layer is positioned above the substrate; and a plurality of microlenses arranged in an array and located on or above the first transparent medium layer, wherein the microlenses respectively irradiate a plurality of parallel normal incident lights entering the microlenses from the outside into the interior of a part or all of the total number of the sensing pixels through the first transparent medium layer, and irradiate a plurality of parallel oblique incident lights entering the microlenses from the outside into the exterior of a part or all of the total number of the sensing pixels, thereby sensing an image of a target object. The target object generates parallel forward incident lights and parallel oblique incident lights, the forward incident lights are parallel to a plurality of optical axes of the micro lenses, and an angle is formed between each oblique incident light and each optical axis.

An embodiment of the utility model provides a more provide an optical sensor, include: a substrate having a plurality of sensing pixels arranged in an array; the first transparent medium layer is positioned above the substrate; and a plurality of offset microlenses arranged in an array and located on or above the first transparent medium layer. The offset micro-lenses respectively enable a plurality of parallel forward incident lights entering the offset micro-lenses from the outside to pass through the first transparent medium layer and enter the outer part of part or all of the total number of the sensing pixels, and enable a plurality of parallel oblique incident lights entering the offset micro-lenses from the outside to enter the inner part of part or all of the total number of the sensing pixels, so that an image of an object is sensed, the object generates the parallel forward incident lights and the parallel oblique incident lights, the forward incident lights are parallel to a plurality of optical axes of the offset micro-lenses, and each oblique incident light and each optical axis form an angle.

An embodiment of the utility model provides an optical sensing system again, include: a base; a battery arranged on the base; a frame disposed above the battery; an optical sensor for sensing an image of a target object; the display is used for displaying information, wherein the optical sensor is arranged on the frame or attached to the lower surface of the display, the target object is positioned on or above the display, the optical sensor senses the image of the target object through the display, and the battery supplies power to the optical sensor and the display.

Some embodiments of the utility model provide an optical sensor, contain: the light-emitting device comprises a substrate, a first shading layer, a micro-lens layer and a first transparent medium layer. The substrate includes an array of sensing pixels. The first light shielding layer is located above the sensing pixel array and is provided with a plurality of first openings, wherein the first openings expose a plurality of sensing pixels of the sensing pixel array. The micro-lens layer is located above the first light-shielding layer and comprises a plurality of micro-lenses. The first transparent medium layer is located above the sensing pixel array and between the micro lens layer and the sensing pixel array, wherein the first transparent medium layer has a first thickness. The micro-lens layer is used for guiding incident light to penetrate through the first transparent medium layer to the sensing pixels below the first openings.

Some embodiments of the utility model provide an optical sensor, contain: the lens comprises a substrate, a first transparent medium layer and a micro-lens layer. The substrate comprises a sensing pixel array, wherein the sensing pixel array comprises a plurality of sensing pixels, and each sensing pixel has a pixel size. The first transparent medium layer is located above the sensing pixel array. The micro-lens layer is located above the first transparent medium layer and comprises a plurality of micro-lenses, each micro-lens has a diameter, and the micro-lenses are used for guiding incident light to penetrate through the first transparent medium layer to the sensing pixels. The pixel size is in the range of 3 microns to 10 microns, and the diameter is in the range of 10 microns to 50 microns.

Some embodiments of the present invention provide an optical sensor, the optical sensor including: a substrate having a plurality of sensing pixels arranged in an array; the first transparent medium layer is positioned above the substrate; and a plurality of microlenses arranged in an array and located on or above the first transparent medium layer, wherein the plurality of microlenses respectively inject a plurality of parallel forward incident lights entering the plurality of microlenses from the outside into a part or all of the total number of the plurality of sensor pixels through the first transparent medium layer, and inject a plurality of parallel oblique incident lights entering the plurality of microlenses from the outside into a part or all of the total number of the plurality of sensor pixels, thereby sensing an image of an object, the object generating the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, the plurality of parallel forward incident lights being parallel to a plurality of optical axes of the plurality of microlenses, each of the plurality of parallel oblique incident lights making an angle with each of the optical axes.

Preferably, the angle is between 5 degrees and 90 degrees.

Preferably, the optical sensor further comprises: a dielectric layer group which is positioned on the substrate and covers the plurality of sensing pixels; a first light shielding layer arranged on the dielectric layer group and provided with a plurality of first light holes, wherein the plurality of parallel forward incident lights pass through the plurality of first light holes, and the plurality of parallel oblique incident lights do not pass through the plurality of first light holes; and an optical filter layer located on the first shading layer and performing light wavelength filtering action on the parallel forward incident lights and the parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer, and the microlenses are located on the first transparent medium layer.

Preferably, the optical sensor further comprises: a dielectric layer group which is positioned on the substrate and covers the plurality of sensing pixels; a first light shielding layer arranged on the dielectric layer group and provided with a plurality of first light holes, wherein the plurality of parallel forward incident lights pass through the plurality of first light holes, and the plurality of parallel oblique incident lights do not pass through the plurality of first light holes; and the optical filter plate is positioned above the micro lenses and used for executing light wavelength filtering action on the parallel forward incident lights and the parallel oblique incident lights, and the micro lenses are positioned on the first transparent medium layer.

Preferably, the optical sensor further comprises: and the lens shading layer is positioned on the first transparent medium layer and in the gaps among the micro lenses so as to shade a plurality of parallel second oblique incident lights entering the gaps from the outside from entering the first transparent medium layer and the sensing pixels.

Preferably, the optical sensor further comprises: a dielectric layer group which is positioned on the substrate and covers the plurality of sensing pixels; a first light shielding layer arranged on the dielectric layer group and provided with a plurality of first light holes, wherein the plurality of parallel forward incident lights pass through the plurality of first light holes, and the plurality of parallel oblique incident lights do not pass through the plurality of first light holes; an optical filter layer located on the first light-shielding layer and performing a light wavelength filtering operation on the parallel forward incident lights and the parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer, and the microlenses are located on the first transparent medium layer; and a lens shading layer which is positioned on the first transparent medium layer and in a plurality of gaps among the plurality of micro lenses so as to shade a plurality of parallel second oblique incident lights entering the plurality of gaps from the outside and prevent the second oblique incident lights from entering the first transparent medium layer and the plurality of sensing pixels.

Preferably, the optical sensor further comprises: the second shading layer is positioned on the first transparent medium layer and is provided with a plurality of second light holes, and the plurality of optical axes respectively pass through the plurality of second light holes; and the second transparent dielectric layer is positioned on the second shading layer, the microlenses are positioned on the second transparent dielectric layer, one of the microlenses is defined as a target microlens, the optical axis of the target microlens is defined as a target optical axis, the sensing pixel passed by the target optical axis is defined as a target sensing pixel, the microlenses adjacent to the target microlens are defined as adjacent microlenses, and the second shading layer shades a plurality of parallel third oblique incident lights entering the adjacent microlenses from the outside from entering the first transparent dielectric layer and the target sensing pixel.

Preferably, the optical sensor further comprises: a dielectric layer group which is positioned on the substrate and covers the plurality of sensing pixels; a first light shielding layer arranged on the dielectric layer group and provided with a plurality of first light holes, wherein the plurality of parallel forward incident lights pass through the plurality of first light holes, and the plurality of parallel oblique incident lights do not pass through the plurality of first light holes; an optical filter layer located on the first light shielding layer and performing a light wavelength filtering operation on the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer; the second shading layer is positioned on the first transparent medium layer and is provided with a plurality of second light holes, and the plurality of optical axes respectively pass through the plurality of second light holes; and the second transparent dielectric layer is positioned on the second shading layer, the microlenses are positioned on the second transparent dielectric layer, one of the microlenses is defined as a target microlens, the optical axis of the target microlens is defined as a target optical axis, the sensing pixel passed by the target optical axis is defined as a target sensing pixel, the microlenses adjacent to the target microlens are defined as adjacent microlenses, and the second shading layer shades a plurality of parallel third oblique incident lights entering the adjacent microlenses from the outside from entering the first transparent dielectric layer and the target sensing pixel.

Preferably, the optical sensor further comprises: the first shading layer is positioned above the substrate and is provided with a plurality of first light holes; and a second light-shielding layer located above the first light-shielding layer and having a plurality of second light holes, wherein the microlenses are respectively located above the second light holes, and the optical axes respectively pass through the second light holes and the first light holes, wherein a pitch X of the microlenses is represented by the following formula:

X＝A1+(H/h)*(A2-A1)±20μm

wherein A1 represents an aperture diameter of the first aperture, A2 represents an aperture diameter of the second aperture, H represents a distance between a bottom surface of the microlens and the first light-shielding layer, and H represents a distance between the second light-shielding layer and the first light-shielding layer.

Preferably, the plurality of sensing pixels are laterally sized to receive the plurality of parallel normal incident lights but not the plurality of parallel oblique incident lights, and the optical sensor does not have any light shielding layer between the first transparent dielectric layer and the plurality of sensing pixels to shield the plurality of parallel oblique incident lights.

Preferably, the optical sensor further comprises: a dielectric layer group which is positioned on the substrate and covers the plurality of sensing pixels; and an optical filter layer disposed on the dielectric layer group and performing a light wavelength filtering operation on the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, wherein the first transparent dielectric layer is disposed on the optical filter layer, and the plurality of microlenses are disposed on the first transparent dielectric layer, wherein the plurality of sensor pixels are laterally sized to receive the plurality of parallel forward incident lights but not the plurality of parallel oblique incident lights, and the optical sensor does not have any light shielding layer between the first transparent dielectric layer and the plurality of sensor pixels to shield the plurality of parallel oblique incident lights.

Preferably, the optical sensor further comprises: a plurality of offset microlenses arranged in an array and located on or over the first transparent dielectric layer, wherein: the plurality of microlenses respectively enable the plurality of parallel normal incidence lights to be incident inside a part of the total number of the plurality of sensing pixels and enable the plurality of parallel oblique incidence lights to be incident outside the part of the total number of the plurality of sensing pixels; the plurality of offset micro-lenses respectively make a plurality of parallel second normal incident lights entering the plurality of offset micro-lenses from the outside incident outside the rest of the total number of the plurality of sensing pixels through the first transparent medium layer, and make a plurality of parallel fourth oblique incident lights entering the plurality of offset micro-lenses from the outside incident inside the rest of the total number of the plurality of sensing pixels, the target generates the plurality of parallel second normal incident lights and the plurality of parallel fourth oblique incident lights, the plurality of parallel second normal incident lights are parallel to a plurality of optical axes of the plurality of offset micro-lenses, and each fourth oblique incident light and each optical axis form a second angle.

Preferably, the plurality of offset microlenses are arranged at the periphery of the plurality of microlenses.

Preferably, the second angle is between 0 and 60 degrees.

Some embodiments of the present invention provide an optical sensor, the optical sensor including: a substrate having a plurality of sensing pixels arranged in an array; the first transparent medium layer is positioned above the substrate; and a plurality of offset microlenses arranged in an array and located on or above the first transparent dielectric layer, wherein: the plurality of offset micro-lenses respectively make a plurality of parallel forward incident lights entering the plurality of offset micro-lenses from the outside incident on the outside of a part or all of the total number of the plurality of sensing pixels through the first transparent medium layer, and make a plurality of parallel oblique incident lights entering the plurality of offset micro-lenses from the outside incident on the inside of a part or all of the total number of the plurality of sensing pixels, thereby sensing an image of an object, the object generating the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, the plurality of parallel forward incident lights being parallel to a plurality of optical axes of the plurality of offset micro-lenses, each of the parallel oblique incident lights forming an angle with each of the optical axes.

Preferably, the optical sensor further comprises: a dielectric layer group which is positioned on the substrate and covers the plurality of sensing pixels; a first light shielding layer arranged on the dielectric layer group and provided with a plurality of first light holes, wherein the plurality of parallel forward incident lights do not pass through the plurality of first light holes, and the plurality of parallel oblique incident lights pass through the plurality of first light holes; and an optical filter layer located on the first shading layer and performing light wavelength filtering action on the parallel forward incident lights and the parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer, and the offset microlenses are located on the first transparent medium layer.

Preferably, the optical sensor further comprises: and the lens shading layer is positioned on the first transparent medium layer and in the gaps among the plurality of offset micro-lenses so as to shade a plurality of parallel second oblique incident lights entering the gaps from the outside and prevent the second oblique incident lights from entering the first transparent medium layer and the plurality of sensing pixels.

Preferably, the optical sensor further comprises: a dielectric layer group which is positioned on the substrate and covers the plurality of sensing pixels; a first light shielding layer arranged on the dielectric layer group and provided with a plurality of first light holes, wherein the plurality of parallel forward incident lights pass through the plurality of first light holes, and the plurality of parallel oblique incident lights do not pass through the plurality of first light holes; an optical filter layer located on the first light-shielding layer and performing a light wavelength filtering operation on the parallel forward incident lights and the parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer, and the plurality of offset microlenses are located on the first transparent medium layer; and a lens shading layer which is positioned on the first transparent medium layer and in a plurality of gaps among the plurality of offset micro-lenses so as to shade a plurality of parallel second oblique incident lights entering the plurality of gaps from the outside and prevent the second oblique incident lights from entering the first transparent medium layer and the plurality of sensing pixels.

Preferably, the optical sensor further comprises: the second shading layer is positioned on the first transparent medium layer and is provided with a plurality of second light holes; and the second transparent medium layer is positioned on the second shading layer, the plurality of offset micro lenses are positioned on the second transparent medium layer, one of the plurality of offset micro lenses is defined as a target micro lens, the optical axis of the target micro lens is defined as a target optical axis, the sensing pixel through which the target optical axis passes is defined as a target sensing pixel, the plurality of offset micro lenses adjacent to the target micro lens are defined as adjacent micro lenses, and the second shading layer shades a plurality of parallel third oblique incident lights entering the adjacent micro lenses from the outside from entering the first transparent medium layer and the target sensing pixel.

Preferably, the optical sensor further comprises: a dielectric layer group which is positioned on the substrate and covers the plurality of sensing pixels; a first light shielding layer arranged on the dielectric layer group and provided with a plurality of first light holes, wherein the plurality of parallel forward incident lights do not pass through the plurality of first light holes, and the plurality of parallel oblique incident lights pass through the plurality of first light holes; an optical filter layer located on the first light shielding layer and performing a light wavelength filtering operation on the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer; the second shading layer is positioned on the first transparent medium layer and is provided with a plurality of second light holes; and the second transparent medium layer is positioned on the second shading layer, the plurality of offset micro lenses are positioned on the second transparent medium layer, one of the plurality of offset micro lenses is defined as a target micro lens, the optical axis of the target micro lens is defined as a target optical axis, the sensing pixel through which the target optical axis passes is defined as a target sensing pixel, the plurality of offset micro lenses adjacent to the target micro lens are defined as adjacent micro lenses, and the second shading layer shades a plurality of parallel third oblique incident lights entering the adjacent micro lenses from the outside from entering the first transparent medium layer and the target sensing pixel.

Some embodiments of the utility model provide an optical sensing system, a serial communication port, optical sensing system include: a base; the battery is arranged on the base; a frame disposed above the battery; an optical sensor for sensing an image of a target object; a display for displaying information, wherein the optical sensor is mounted on the frame or attached to a lower surface of the display, the object is located on or above the display, the optical sensor senses the image of the object through the display, and the battery supplies power to the optical sensor and the display.

Preferably, a shortest distance between a receiving bottom of the frame for mounting the optical sensor and the display is between 0.1mm and 0.5 mm.

Preferably, the optical sensor includes: a substrate having a plurality of sensing pixels arranged in an array; the first transparent medium layer is positioned above the substrate; and a plurality of microlenses arranged in an array and located on or above the first transparent medium layer, wherein the plurality of microlenses respectively inject a plurality of parallel forward incident lights entering the plurality of microlenses from the outside into a part or all of the total number of the plurality of sensor pixels through the first transparent medium layer, and inject a plurality of parallel oblique incident lights entering the plurality of microlenses from the outside into a part or all of the total number of the plurality of sensor pixels, thereby sensing an image of the object, the object generating the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, the plurality of parallel forward incident lights being parallel to a plurality of optical axes of the plurality of microlenses, each of the plurality of parallel oblique incident lights making an angle with each of the optical axes.

Preferably, the optical sensor includes: a substrate having a plurality of sensing pixels arranged in an array; the first transparent medium layer is positioned above the substrate; and a plurality of offset microlenses arranged in an array and located on or above the first transparent dielectric layer, wherein: the plurality of offset microlenses respectively inject a plurality of parallel forward incident lights entering the plurality of offset microlenses from the outside into the outside of a part or all of the total number of the plurality of sensor pixels through the first transparent medium layer, and inject a plurality of parallel oblique incident lights entering the plurality of offset microlenses from the outside into the inside of a part or all of the total number of the plurality of sensor pixels, thereby sensing the image of the target object, the target object generating the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, the plurality of parallel forward incident lights being parallel to a plurality of optical axes of the plurality of offset microlenses, each of the parallel oblique incident lights making an angle with each of the optical axes.

Some embodiments of the utility model provide an optical sensor, include: a substrate including a sensing pixel array; a first light shielding layer located above the sensing pixel array and having a plurality of first openings, wherein the first openings expose a plurality of sensing pixels of the sensing pixel array; a microlens layer located above the first light-shielding layer and including a plurality of microlenses; the first transparent medium layer is positioned above the sensing pixel array and between the micro lens layer and the sensing pixel array, and the first transparent medium layer has a first thickness; the micro-lens layer is used for guiding an incident light to penetrate through the first transparent medium layer to the sensing pixels below the first openings.

Preferably, the optical sensor further comprises: a protection layer, which is adapted to cover the micro lens layer.

Preferably, a center line of at least one microlens and a center line of the corresponding at least one first opening have an offset distance.

Preferably, the offset distance, the radius of curvature of the microlenses, the first thickness, and the apertures of the first openings are configured to allow the sensing pixels to receive light incident at an oblique angle.

Preferably, a center line of at least one microlens overlaps a center line of the corresponding at least one first opening.

Preferably, the first openings and the sensing pixels correspond to each other in one-to-one, one-to-many, or many-to-one manner.

Preferably, the microlenses and the sensing pixels correspond to each other in one-to-one, one-to-many, or many-to-one manner.

Preferably, the thickness of the first light-shielding layer is in a range from about 0.3 micrometers to about 5 micrometers, and the aperture of the first openings is in a range from 0.3 micrometers to 50 micrometers.

Preferably, the first thickness of the first transparent dielectric layer is in a range of 1 to 50 microns.

Preferably, the optical sensor further comprises: and the second transparent medium layer is positioned between the first shading layer and the micro-lens layer.

Preferably, the optical sensor further comprises: and the filter layer is positioned between the first transparent medium layer and the micro-lens layer.

Preferably, the optical sensor further comprises: and the second shading layer is positioned on the first transparent medium layer and is provided with a plurality of second openings.

Preferably, the thickness of the second light-shielding layer is in a range from about 0.3 microns to about 5 microns, and the pore size of the second openings is in a range from about 0.3 microns to about 50 microns.

Preferably, the optical sensor further comprises: the second transparent medium layer is positioned between the first transparent medium layer and the micro-lens layer; and a third shading layer located between the first transparent medium layer and the second transparent medium layer.

Some embodiments of the utility model provide an optical sensor, include: a substrate comprising a sensor pixel array, wherein the sensor pixel array comprises a plurality of sensor pixels, and each sensor pixel has a pixel size; the first transparent medium layer is positioned above the sensing pixel array; and a microlens layer disposed above the first transparent medium layer and including a plurality of microlenses, each microlens having a diameter, wherein the microlenses are configured to guide an incident light to pass through the first transparent medium layer to the sensing pixels, wherein the pixel size is in a range of 3 microns to 10 microns, and the diameter is in a range of 10 microns to 50 microns.

Preferably, the first transparent medium layer has a refractive index n, the first transparent medium layer has a thickness T, the microlenses have a focal length f and a diameter D, and the incident light has an incident angle θ_iAnd a refraction angle theta_r(ii) a Wherein the pixel size P, the refractive index n, the thickness T, the focal length f, the diameter D, and the incident angle θ_iAnd the angle of refraction theta_rThe following relationships are satisfied:

sinθ_i＝n*sinθ_r，

f＝((D/2)²+T²)^1/2，

P/2＝f*tanθ_r。

preferably, the substrate further includes a circuit structure located between two adjacent sensing pixels.

Preferably, the center line of at least one microlens has an offset distance with the center line of the corresponding sensing pixel.

Preferably, the offset distance, the pixel size, the refractive index, the thickness, the focal length, and the diameter are configured such that the sensing pixels receive light at an oblique angle.

Preferably, the center line of at least one microlens overlaps the center line of the corresponding sensing pixel.

Preferably, the first thickness of the first transparent dielectric layer is in the range of 1 micron to 50 microns.

Preferably, the ratio of the pixel size to the diameter is in the range of 0.06 to 1.

Preferably, the microlens layer on the first transparent medium layer further has a plurality of microlenses with a second focal length to guide another incident light to penetrate through the first transparent medium layer to the sensing pixels.

Preferably, the optical sensor further comprises: and a second light shielding layer located on the first transparent dielectric layer and having a plurality of second openings, wherein the microlenses are correspondingly disposed in the second openings.

Through the embodiment, the light shielding layer, the micro lens and the sensing pixels of the optical sensor are designed, so that the sensing pixels can receive light rays from a specific incident angle range, unnecessary stray light is eliminated, the thickness of the optical sensor can be effectively reduced, the optical sensor can be easily arranged between a battery and a display of electronic equipment such as a mobile phone and the like, and the light source of the display can be used for realizing optical sensing under a screen.

In order to make the above and other objects of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale and are merely illustrative. In fact, the dimensions of the elements may be arbitrarily expanded or reduced to clearly illustrate the features of the embodiments of the present invention.

Fig. 1 shows a schematic cross-sectional view of an optical sensing system according to a first embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view of an optical sensor according to a first embodiment of the present invention.

Fig. 3 shows a characteristic curve of an optical sensor according to a first embodiment of the present invention.

Fig. 4 shows a schematic cross-sectional view of an optical sensing system according to a second embodiment of the present invention.

Fig. 5 is a schematic diagram illustrating an operation state of an optical sensor according to a first embodiment of the present invention.

Fig. 6 is a schematic cross-sectional view of an optical sensor according to a third embodiment of the present invention.

Fig. 7 shows a characteristic diagram of an optical sensor according to a third embodiment of the present invention.

Fig. 8 is a schematic view showing another operation state of the optical sensor according to the first embodiment of the present invention.

Fig. 9 is a schematic cross-sectional view of an optical sensor according to a fourth embodiment of the present invention.

Fig. 10 shows a characteristic graph of the optical sensor of fig. 8.

Fig. 11 shows a characteristic graph of the optical sensor of fig. 9.

Fig. 12 is a schematic partial cross-sectional view illustrating the operation of an optical sensor according to a fourth embodiment of the present invention.

Fig. 13 is a schematic cross-sectional view of an optical sensor according to a fifth embodiment of the present invention.

Fig. 14 is a schematic partial cross-sectional view of an optical sensor according to a sixth embodiment of the present invention.

Fig. 15 is a characteristic graph showing the optical sensor of fig. 14.

Fig. 16A and 16B are schematic partial cross-sectional views illustrating two examples of an optical sensor according to a seventh embodiment of the present invention.

Fig. 17A to 17E are schematic structural cross-sectional views illustrating steps of a method for manufacturing an optical sensor according to an eighth embodiment of the present invention.

Fig. 18A to 18F are schematic structural cross-sectional views illustrating steps of a method for manufacturing an optical sensor according to a ninth embodiment of the present invention.

Fig. 19A to 19F are schematic structural cross-sectional views illustrating steps of a method for manufacturing an optical sensor according to a tenth embodiment of the present invention.

Fig. 20 is a schematic cross-sectional view of an optical sensor according to a variation of the eighth embodiment of the present invention.

Fig. 21 is a schematic cross-sectional view of an optical sensor according to a variation of the tenth embodiment of the present invention.

Fig. 22 is a schematic diagram illustrating an optical sensing system sensing an object, according to some embodiments of the present invention.

Fig. 23 is a schematic diagram illustrating an example configuration of an optical sensing system sensing target, according to some embodiments of the present invention.

Fig. 24-26B are schematic cross-sectional views of an optical sensor at various stages of processing, according to some embodiments of the present invention.

Fig. 27A-27F are schematic cross-sectional views illustrating an optical sensor, according to some embodiments of the present invention.

Fig. 28A to 28C are schematic cross-sectional views illustrating an optical sensor according to other embodiments of the present invention.

Fig. 29 to 32 are schematic cross-sectional views illustrating an optical sensor including additional structures according to some other embodiments of the present invention.

Fig. 33 is a cross-sectional schematic diagram illustrating an optical sensing system including an example structure of a display, according to some embodiments of the invention.

Fig. 34-35 are schematic cross-sectional views illustrating optical sensing systems including different package structures according to some other embodiments of the present invention.

Fig. 36 is a schematic diagram illustrating an optical sensing system receiving incident light, according to some embodiments of the present invention.

Fig. 37-38 are schematic cross-sectional views illustrating an optical sensor at various stages of processing, according to further embodiments of the present invention.

Fig. 39A to 39B are schematic cross-sectional views illustrating configurations of microlenses according to other embodiments of the present invention.

Fig. 40 is a partially enlarged schematic view showing a cross section of an arrangement of microlenses and sensor pixels according to other embodiments of the present invention.

The reference numerals are explained below:

1-ANG-Angle

1-ANG 2-second angle

1-CR-area of the object to be measured

1-CV 1-Curve

1-CV 2-Curve

1-d, H, H-distance

1-F-target

1-G-gap

1-L1 Forward incident light

1-L1' forward incident light

1-L2-oblique incident light

1-L3-second oblique incident light

1-L4 to third oblique incident light

1-L5-fourth oblique incident light

1-OA-optical axis

1-OAA-optical axis

1-OAM-target optical axis

1-SR area

1-203, 1-203', 1-203M-sensor pixel

1-200-optical sensor

1-201 to the substrate

1-202 dielectric layer group

1-204 to the first light-shielding layer

1-204A-first aperture

1-205 protective layer

1-206 optical filter layer

1-207-first transparent dielectric layer

1-208 to the second light-shielding layer

1-208A to the second aperture

1-209 second transparent dielectric layer

1-210. microlens

1-210A-offset microlens

1-210B-bottom surface

1-210M-target microlens

1-211-lens shading layer

1-300-display

1-300B to the lower surface

1-400-frame

1-410-containing groove

1-420-accommodating bottom

1-500-cell

1-600-optical sensing system

1-610 to the base

1-900-optical filter plate

1-1300 optical sensor module

1-1301-bearing hard plate

1-1302 flexible circuit board

1-1303-welding wire

1-1305 to frame

1-1306 adhesive sealing layer

A1, A2-aperture

X-distance

2-100-optical sensing system

2-101-cover plate layer

2-200, 2-200' optical sensor

2-300-display

2-201 to the substrate

2-202-sensor pixel array

2-203, 2-203A, 2-203B, 2-203C to sensing pixel

2-204 to the first light-shielding layer

2-205, 2-205A, 2-205B, 2-205C to the first opening

2-206 to first transparent dielectric layer

2-206A, 2-206B-first transparent dielectric sublayer

2-207 to second light-shielding layer

2-208 to second opening

2-209 microlens layer

2-210, 2-210A, 2-210B, 2-210C to microlens

2-800 protective layer

2-900 filter layer

2-1001 second transparent dielectric layer

2-1002 to third light-shielding layer

2-1003 to third opening

2-1201-first light-transmitting material

2-1202 thin film transistor layer

2-1203 ~ cathode layer

2-1204. luminescent layer

2-1205-anodic layer

2-1206-second light-transmitting material

2-1207-polarizing plate

2-1208. adhesive layer

2-1209-light-transmitting cover plate

2-1210-aperture

2-1301 to the conducting pad

2-1302-conducting wire

2-1303. circuit board

2-1304-reinforcing plate

2-1305, 2-1401-Frames

2-1402-adhesive Material

2-1403 adhesive layer

2-1601 circuit structure

2-C, 2-C1, 2-C2, 2-C3, 2-C1A, 2-C2A, 2-C1C and 2-C2C to the center line

2-CR target contact area

2-F-target

2-F1-convex part

2-F2-recess

2-L1, 2-L2, 2-L3-ray

2-S, 2-S1, 2-S2-lateral offset distance

2-SR-optical sensing area

2-T_A、2-T_BThickness of

A1' first aperture

A2' second aperture

D diameter

f-focal length

L incident light

n-refractive index

P width

R-radius of curvature

T-thickness theta, theta' to main angle

Theta 1, theta 2 to tolerance

θ_iAngle of incidence

θ_rAngle of refraction

Detailed Description

The following disclosure provides many embodiments or examples, and specific examples of components and configurations thereof are described below to simplify the description of embodiments of the invention. These are, of course, merely examples and are not intended to limit the embodiments of the invention. For example, references in the description to a first element being formed on a second element may include embodiments in which the first and second elements are in direct contact, and may also include embodiments in which additional elements are formed between the first and second elements such that they are not in direct contact. In addition, embodiments of the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments discussed.

Furthermore, spatially relative terms, such as "below," "lower," "above," "upper," and the like, may be used herein to facilitate describing the relationship of element(s) or feature(s) to one another in the drawings and include different orientations of the device in use or operation and the orientation depicted in the drawings. When the device is turned to a different orientation (rotated 90 degrees or otherwise), the spatially relative adjectives used herein will also be interpreted in terms of the turned orientation.

As used herein, the term "about", "about" or "substantially" generally means within 20%, preferably within 10%, and preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. It should be noted that the amounts provided in the specification are approximate amounts, i.e., the meanings of "about", "about" and "about" may be implied without specific recitation of "about", "about" and "about".

Although the steps in some of the described embodiments are performed in a particular order, these steps may be performed in other logical orders. In various embodiments, some of the described steps may be replaced or omitted, and other operations may be performed before, during, and/or after the described steps in embodiments of the present invention. The embodiment of the utility model provides an optical sensor and optical sensing system can add other characteristics. Some features may be replaced or omitted in different embodiments.

[ first group of examples ]

Fig. 1 shows a schematic cross-sectional view of an optical sensing system according to a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of an optical sensor according to a first embodiment of the present invention. As shown in fig. 1 and 2, an optical sensing system 1-600 of the present embodiment, such as an electronic device like a mobile phone or a tablet computer, includes a base 1-610, a battery 1-500, a frame 1-400, an optical sensor 1-200 and a display 1-300.

The base 1-610 is a part of the casing of the electronic device, and the battery 1-500 is disposed on the base 1-610. The frame 1-400 is disposed above the battery 1-500 and has a receiving groove 1-410 (this receiving groove may be omitted depending on the design). The optical sensor 1-200 is installed on a receiving bottom 1-420 of the receiving groove 1-410 for sensing an image of a target object 1-F. When the accommodation groove is omitted, the optical sensor 1-200 is mounted on the frame 1-400. The display 1-300 is disposed above the optical sensor 1-200 for displaying information. The object 1-F is located on or above the display 1-300. The optical sensor 1-200 senses the image of the object 1-F through the display 1-300, and the battery 1-500 supplies power to the optical sensor 1-200 and the display 1-300 to maintain the operation of the electronic device. A shortest distance 1-d between the accommodating bottom 1-420 of the frame 1-400 for mounting the optical sensor 1-200 and the display 1-300 is between 0.1mm and 0.5 mm; between 0.2 and 0.5 mm; between 0.3 and 0.5 mm; or between 0.4 and 0.5 mm.

The optical sensor 1-200 includes a substrate 1-201, a first transparent medium layer 1-207, and a plurality of microlenses 1-210. The substrate 1-201 has a plurality of Sensor pixels (Sensor pixels) 203 arranged in an array. A first transparent dielectric layer 1-207 is located over the substrate 1-201. The microlenses 1-210 are arranged in an array and are located on or over the first transparent dielectric layers 1-207 (fig. 1) (e.g., fig. 9, described below). The microlenses 1-210 respectively receive a plurality of parallel normal incident lights (or direct incident lights) 1-L1 from the outside into the microlenses 1-210, incident on the interior of a part (indicating that the corresponding sensor pixel 1-203 receives light) or all (fig. 1) of the total number of the sensor pixels 1-203 through the first transparent dielectric layers 1-207 (fig. 16A and 16B described later refer to some of the sensor pixels 1-203), and a plurality of parallel oblique incident lights L2 entering the microlenses 1-210 from the outside are incident on the outside (indicating that the corresponding sensing pixels 1-203 do not receive light) of a part (fig. 16A and 16B described later refer to some sensing pixels 1-203) or all (fig. 1) of the total number of the sensing pixels 1-203, thereby sensing an image of the object 1-F. The meaning of a fraction of the total number of sensing pixels 1-203 is explained below. For example, the total number of (M + N) sensor pixels 1-203, where M and N are natural numbers, and M sensor pixels 1-203 are a fraction of the total number of sensor pixels 1-203. All meanings regarding the total number of sensing pixels 1-203 are explained below. For example, the total number of (M + N) sensor pixels 1-203, where (M + N) sensor pixels 1-203 are all of the total number of sensor pixels 1-203. The object 1-F may reflect light from the ambient light, the display 1-300, or a combination thereof to produce the parallel normally incident light 1-L1 and the parallel obliquely incident light 1-L2. The forward incident lights 1-L1 are parallel to the optical axes 1-OA of the microlenses 1-210. Each of the obliquely incident lights 1-L2 makes an angle 1-ANG with each of the optical axes 1-OA. The forward incident light 1-L1 is drawn in FIG. 2 as traveling in the vertical direction and is therefore parallel to the optical axis 1-OA. However, the present embodiment does not limit the forward incident light 1-L1 to be parallel to the optical axis 1-OA. In one embodiment, the angle between the forward incident light 1-L1 that may be received by the sensor pixel 1-203 through the microlens 1-210 and the optical axis 1-OA ranges from-3.5 degrees to 3.5 degrees; -between 4 degrees and +4 degrees; or-5 degrees to +5 degrees, i.e., the angle 1-ANG is between 3.5 degrees to 90 degrees; between 4 degrees and 90 degrees; or between 5 degrees and 90 degrees. That is, none of the obliquely incident light 1-L2 having an angle greater than 3.5 degrees or 5 degrees with the optical axis 1-OA enters the sensing pixel 1-203.

The detailed structure of the first embodiment is explained below. The optical sensor 1-200 further includes a dielectric layer group 1-202, a first light shielding layer 1-204, a protection layer 1-205, and an optical filter layer 1-206 (the protection layer 1-205 can also be considered as a part of the optical filter layer 1-206). A dielectric layer group 1-202 is located on the substrate 1-201 and covers the sensing pixels 1-203. The first light-shielding layer 1-204 is disposed on the dielectric layer group 1-202 and has a plurality of first light apertures (apertures) 1-204A. The forward incident lights 1-L1 pass through the first light holes 1-204A, and the oblique incident lights 1-L2 do not pass through the first light holes 1-204A. The passivation layers 1-205 are disposed on the first light-shielding layers 1-204 and can be filled in the first light-shielding layers 1-204. The optical filter layers 1-206 are disposed on the passivation layers 1-205, and perform light wavelength filtering operations on the forward incident light 1-L1 and the oblique incident light 1-L2, wherein the first transparent dielectric layers 1-207 are disposed on the optical filter layers 1-206, and the microlenses 1-210 are disposed on the first transparent dielectric layers 1-207.

Therefore, the present invention provides an optical sensor and an optical sensing system using the optical sensor and a method for manufacturing the optical sensing system, particularly an optical biometric sensor used under a screen and an optical sensing system using the optical sensor. As shown in fig. 1, the optical sensor 1-200 provided in the embodiment of the present invention has a Controllable Angle collimation structure (Angle Controllable Collimator), which includes a first light shielding layer 1-204 exposing the sensing pixels 1-203, a first light aperture 1-204A formed by removing a portion of the first light shielding layer 1-204, an optical filtering layer 1-206 and a first transparent dielectric layer 1-207 formed on the first light shielding layer 1-204 and the first light aperture 1-204A, and a microlens 1-210 formed on the first transparent dielectric layer 1-207.

The angle-controllable collimating structure utilizes the relative position design (such as optical axis alignment or offset) between the micro-lenses 1-210 and the first light apertures 1-204A (including the sensing pixels 1-203), and can control the angle (normal incidence or oblique incidence) of specific incident light to be sensed by the sensing pixels 1-203, thereby effectively improving the quality of the optical sensor. The utility model provides an optical sensor's formation mode of controllable angle collimation structure compares under traditional handicraft, has the advantage that cost and manufacturing process are simplified, and above all, uses this optical sensor, and the height or the thickness of its module design can also be less than 0.5mm, can be under the configuration that does not influence the battery completely, will the optical sensor module sets up under the screen and between the battery, solves the problem of known technique completely. It is worth mentioning that, the sensor and the optical sensor module of the present invention are not limited to the fingerprint application as the background art, but can also be applied to the finger vein, the blood flow rate and the blood oxygen detection. Furthermore, it can be used for non-contact image photographing, such as an off-screen camera or the like, photographing of, for example, a human face or eyes or a general photographing function for face recognition or iris recognition, and the like.

When the optical sensor 1-200 of fig. 1 is applied to an optical sensing system 1-600 such as a mobile phone system, since the mobile phone system is a known technology, not all the detailed structures will be shown here, but only a few key components that must be considered together in cooperation with the optical sensor 1-200 of the present invention will be described. The optical sensing system 1-600 includes a display 1-300 and an optical sensor 1-200 under the display 1-300, wherein the display 1-300 may be an Organic Light-Emitting Diode (OLED) display or a Micro LED display, or other various displays that may be developed in the future. In some embodiments, the display 1-300 of the optical sensing system 1-600 may be used as a light source, and the emitted light will illuminate the object 1-F in contact with or not in contact with the upper surface of the display 1-300, and the object 1-F will reflect the light to the optical sensor 1-200 disposed under the display 1-300 to sense and identify the contour feature of the object 1-F (e.g., the fingerprint feature of a finger). It should be noted that the optical sensors 1-200 in the optical sensing systems 1-600 may also be configured with light sources of other shapes and wavelengths (e.g., infrared light sources), so the embodiments of the present invention are not limited thereto, and the optical sensors may also be used for passive photographing, that is, without projecting a light source to the target (object) 1-F to be measured. It should be noted that, for the sake Of simplicity, the structure Of the optical sensors 1-200 Of the present invention does not show all the detailed structural layers, for example, the CMOS manufacturing process is divided into Front End Of Line (FEOL) and Back End Of Line (BEOL), the Front End includes a Metal Oxide Semiconductor (MOS) structure, or the Back End includes a plurality Of Metal connection layers and Inter-Metal Dielectric layers (IMD), which are mostly omitted here, and only focus on the innovative points Of the present invention, and the detailed description Of the parts will be made later in the manufacturing process.

In fig. 1, an optical sensor 1-200 is configured to be included in an optical sensor module 1-1300, the optical sensor module 1-1300 includes a carrier plate 1-1301, a flexible circuit board 1-1302, and bonding wires 1-1303 for electrically connecting the optical sensor 1-200 and the flexible circuit board 1-1302, the bonding wires 1-1303 being encapsulated and protected by an encapsulant layer 1-1306. The top surface of the sealant layer 1-1306 may be flush with the top surface of the first transparent dielectric layer 1-207, but is not limited thereto. In some embodiments, the bonding wires 1-1303 may be formed of Aluminum (Aluminum), Copper (Copper), Gold (Gold), other suitable conductive materials, alloys thereof, or combinations thereof.

The optical sensor module 1-1300 (including the optical sensor 1-200) is disposed on a frame 1-400 (commonly referred to as a middle frame) used for assembling and supporting the inside of a mobile phone, and the frame 1-400 is usually made of a metal material. As mentioned in the introduction, in order to set the optical sensor module 1-1300 of the present invention within a narrow distance 1-d (defined as the distance from the bottom of the optical sensor module 1-1300 to the bottom of the display 1-300) smaller than 0.5mm, the frame 1-400 can be made to form a recess in advance (as shown in the drawings, it is not limited thereto, and the recess is not needed, or the middle frame can form a through hole, the module is set in the through hole, and the optical sensor 1-200 at this time is installed on the frame 1-400), so as to set the optical sensor module 1-1300 and increase the flexibility of the whole thickness design. In addition, the batteries 1-500 are disposed under the frames 1-400, and the most important point for explaining the present invention is to provide the ultra-thin optical sensor module 1-1300 (including the optical sensor 1-200) disposed between the frames 1-400 (batteries 1-500) and the displays 1-300 without leaving a space for part of the batteries, which can be fixed by gluing, screws or other methods for the convenience of production and maintenance.

According to some embodiments of the present invention, the optical sensor 1-200 shown in fig. 1 includes a substrate 1-201 having sensor pixels (e.g., photodiodes) 1-203 arranged in an array, a dielectric layer group (which may include one or more dielectric layers and one or more metal wire layers) 1-202, a first light shielding layer 1-204 having a plurality of first light apertures 1-204A, a protective layer 1-205, an optical filter layer 1-206 (for filtering infrared light in sunlight, although not limited thereto), a first transparent layer 1-207, and microlenses 1-210. In some embodiments, the first pupil 1-204A and the sensing pixel 1-203 may be of one-to-one, one-to-many, or many-to-one design; the microlenses 1-210 and sensing pixels 1-203 can also be of one-to-one, one-to-many, or many-to-one design.

The operation principle of the optical sensors 1-200 of the present invention will be explained with reference to fig. 2, wherein the forward incident light 1-L1 and the oblique incident light 1-L2 are incident on the optical sensors 1-200 at different angles, respectively. If the microlenses 1-210 and the first light holes 1-204A are aligned on the same optical axis, the forward incident light 1-L1 is focused on the sensing pixels 1-203 due to the focusing effect of the lenses, and the oblique incident light 1-L2 is focused off the optical axis due to the focusing effect of the lenses and is blocked by the first light-shielding layers 1-204. Thus, the function of the angle-controllable collimation structure is achieved. Fig. 3 shows a characteristic curve of an optical sensor according to a first embodiment of the present invention. The data that figure 3 is clear show and is utilized the utility model discloses the divergence angle about the half width of control that can be easy only has 3.5 degrees has proven the utility model discloses a controlled angle collimation structure's particularity and superiority.

Fig. 4 shows a schematic cross-sectional view of an optical sensing system according to a second embodiment of the present invention. As shown in fig. 4, this embodiment is similar to the first embodiment, except that the optical filter layers 1-206 formed by the integrated wafer manufacturing (the thin film manufacturing process of the wafer) are replaced by optical filter plates 1-900, wherein the optical filter plates 1-900 are independent optical filter plates assembled in a back-end module, and a support (dam structure) or a frame 1-1305 disposed on a flexible circuit board 1-1302 is used for supporting the optical filter plates 1-900, and the rest is the same as the description of the components in fig. 1, so that the description thereof will be omitted. Therefore, the passivation layers 1-205 are disposed on the first light-shielding layers 1-204, and the microlenses 1-210 are disposed on the first transparent dielectric layers 1-207. The optical filter plate 1-900 is located above the micro-lenses 1-210, and performs light wavelength filtering operation on the forward incident light 1-L1 and the oblique incident light 1-L2. For example, the optical filter plate 1-900 is disposed above the microlenses 1-210 through the optical sensor module 1-1300.

It should be noted that although the optical sensor modules 1-1300 of the optical sensing systems 1-600 of the present invention are disposed above or in the middle of the frames 1-400, other embodiments may be attached to a lower surface 1-300B of the display 1-300.

Fig. 5 is a schematic diagram illustrating an operation state of an optical sensor according to a first embodiment of the present invention. As shown in fig. 5, since the microlenses 1-210 of the assembled array are fabricated with empty regions (e.g., the regions indicated by gaps 1-G) left between each other, as shown by the flat regions. This is mainly because the microlenses 1-210 are circular structures, while the array of sensing pixels 1-203 under the microlenses 1-210 cannot perfectly match the geometric dimensions of the microlenses 1-210 because of the mask layout. Therefore, if light is incident from the blank area between the microlenses 1-210, such as the second oblique incident light (or the adjacent gap stray light) L3 shown in the figure, and enters the sensing pixels 1-203 exposed in the first light holes 1-204A, the stray light interference is caused, and the image quality is reduced.

Fig. 6 is a schematic cross-sectional view of an optical sensor according to a third embodiment of the present invention. As shown in fig. 6, this embodiment is similar to the first embodiment, and is different in that a lens light-shielding layer 1-211 is disposed at a blank between adjacent microlenses 1-210, and only curved surface regions of the microlenses 1-210 are exposed, so that the problem of stray light interference between adjacent gaps caused by the second oblique incident light 1-L3 can be effectively solved.

Therefore, the optical sensor 1-200 may further include a lens shading layer 1-211 disposed on the first transparent dielectric layer 1-207 and in the plurality of gaps 1-G between the microlenses 1-210 to shade a plurality of parallel second oblique incident lights 1-L3 entering the gaps 1-G from the outside from entering the first transparent dielectric layer 1-207 and the sensing pixels 1-203. The features of the oblique incident light 1-L2 in fig. 2 are also applicable to the present embodiment, so the related description of fig. 2 can be referred to.

Fig. 7 shows a characteristic diagram of an optical sensor according to a third embodiment of the present invention. As shown in fig. 7, which is a graph of actual measurement results, the adjacent gap stray light between the microlenses 1 to 210 can be effectively suppressed. For example, the curves 1-CV1 are the results of not providing the lens shading layers 1-211, while the curves 1-CV2 are the results of providing the lens shading layers 1-211.

Fig. 8 is a schematic view showing another operation state of the optical sensor according to the first embodiment of the present invention. As shown in fig. 8, similar to the adjacent gap stray light interference of fig. 5, when there is crosstalk (Cross Talk) between adjacent microlenses (not limited to the first adjacent microlens), that is, the third oblique incident light (or adjacent lens stray light) 1-L4 of the adjacent microlens 1-210N next to the target microlens 1-210M is coupled into the forward incident light 1-L1 of the target microlens 1-210M and is incident together to a target sensor pixel 1-203M exposed from the first aperture 1-204A, which may cause interference and reduce image quality. A method for solving the above problems will be described below.

Fig. 9 is a schematic cross-sectional view of an optical sensor according to a fourth embodiment of the present invention. As shown in FIG. 9, the optical sensor 1-200 further includes a second light-shielding layer 1-208 and a second transparent dielectric layer 1-209. The second light-shielding layer 1-208 is disposed on the first transparent dielectric layer 1-207 and has a plurality of second light holes 1-208A, and the optical axes 1-OA pass through the second light holes 1-208A, respectively. The second transparent dielectric layers 1-209 are positioned on the second shading layers 1-208. The microlenses 1-210 are located on the second transparent medium layers 1-209. For simplicity, one of the microlenses 1-210 is defined as a target microlens 1-210M, an optical axis 1-OA of the target microlens 1-210M is defined as a target optical axis 1-OAM, a sensing pixel 1-203 through which the target optical axis 1-OAM passes is defined as a target sensing pixel 1-203M, and the microlenses 1-210 adjacent to the target microlens 1-210M are defined as adjacent microlenses 1-210N. In this state, the second light-shielding layers 1-208 shield a plurality of parallel third oblique incident lights 1-L4 entering the adjacent microlenses 1-210N from the outside from entering the first transparent dielectric layers 1-207 and the target sensing pixels 1-203M. The features of the oblique incident light 1-L2 in fig. 2 are also applicable to the present embodiment, so the related description of fig. 2 can be referred to.

Therefore, by disposing the second light-shielding layers 1-208 and the second light holes 1-208A between the microlenses 1-210 and the first light-shielding layers 1-204 and the first light holes 1-204A, the light interference caused by the crosstalk between the adjacent lenses can be effectively shielded.

Fig. 10 shows a characteristic graph of the optical sensor of fig. 8. Fig. 11 shows a characteristic graph of the optical sensor of fig. 9. As shown in FIG. 10, when the second light-shielding layers 1-208 are not disposed, the sensing pixels receive the forward incident light 1-L1 (passing through the target microlenses 1-210M) and the third oblique incident light 1-L4 (passing through the adjacent microlenses 1-210N), resulting in an image ghosting phenomenon. As shown in FIG. 11, when the second light-shielding layers 1-208 are provided, the sensing pixels only receive the forward incident light 1-L1, but do not receive the third oblique incident light, and the image ghosting phenomenon is not caused. Therefore, the second light shielding layers 1 to 208 can effectively solve the problem of crosstalk, enhance the signal quality and improve the image definition. Meanwhile, by providing the second light shielding layers 1 to 208, the crosstalk problem can be effectively solved, and the parasitic light interference in the blank regions between the microlenses as described in fig. 5 can also be suppressed at the same time, which is a very effective method for manufacturing a stone and a bird.

Fig. 12 is a schematic partial cross-sectional view illustrating the operation of an optical sensor according to a fourth embodiment of the present invention. With the advantageous features of the structure of FIG. 9, FIG. 12 can illustrate in more detail how to design optical sensors with different resolutions in combination with the geometric design of the microlenses 1-210, the first optical apertures 1-204A and the second optical apertures 1-208A and the control of the first transparent dielectric layers 1-207 and the second transparent dielectric layers 1-209 for different systems and applications. When designing any type Of sensor array element, there is a Figure Of Merit (Figure Of Merit) that is to try to increase the effective Fill Factor (effective sensor area/single pixel area) Of a single sensor element. Applying this concept to the optical sensor of the present invention, it is to increase the fill factor of each microlens 1-210 (including the corresponding sensing pixel 1-203), and in fig. 6, the optimal fill factor is to leave almost no space between the adjacent microlenses 1-210. In FIG. 12, A1 is the diameter (aperture diameter) of the first aperture 1-204A, A2 is the diameter (aperture diameter) of the second aperture 1-208A, H is the thickness between the first light-shielding layer 1-204 and the second light-shielding layer 1-208, and H is the thickness between the first light-shielding layer 1-204 and the bottom surface 1-210B of the microlens 1-210. By geometric trigonometric relations (triangles) one can get a design formula of resolution, namely X (pitch between two microlenses 1-210) is expressed as follows:

that is to say

For use as a fingerprint sensor, a preferred embodiment may be designed such that H is equal to about 43 μm, H is equal to about 15 μm, A1 is equal to about 4.5 μm, A2 is equal to about 9 μm, and X is equal to about 20 μm according to the above equation. This formula can therefore be used as a design criterion for designing optical sensors of different resolutions, although since the manufacturing process is not perfectly possible, this formula does not use the full "═ sign, but a" ≈ "approximation sign, with an error that can be tolerated within 20 μm.

Thus, in the optical sensor 1-200, the first light shielding layer 1-204 is located above the substrate 1-201 and has a plurality of first light holes 1-204A; the second shading layer 1-208 is arranged above the first shading layer 1-204 and is provided with a plurality of second light holes 1-208A. The microlenses 1-210 are respectively located above the second optical holes 1-208A, and the optical axes 1-OA respectively pass through the second optical holes 1-208A and the first optical holes 1-204A. The pitch (pitch) X of such microlenses 1-210 is represented by the following equation:

X＝A1+(H/h)*(A2-A1)±20μm

where A1 denotes an aperture diameter of the first aperture 1-204A, A2 denotes an aperture diameter of the second aperture 1-208A, H denotes a distance between the bottom surface 1-210B of the microlens 1-210 and the first light-shielding layer 1-204, and H denotes a distance between the second light-shielding layer 1-208 and the first light-shielding layer 1-204.

Fig. 13 is a schematic cross-sectional view of an optical sensor according to a fifth embodiment of the present invention. As shown in fig. 13, the present embodiment is similar to the first embodiment, except that the lateral dimensions (the dimensions in the horizontal direction of fig. 13) of the sensing pixels 1-203 'are designed to receive the forward incident lights 1-L1 but not the oblique incident lights 1-L2, and the optical sensor 1-200 does not have any light shielding layer between the first transparent dielectric layer 1-207 and the sensing pixels 1-203' to shield the oblique incident lights 1-L2.

In detail, in the optical sensor 1-200, the dielectric layer group 1-202 is disposed on the substrate 1-201 and covers the sensing pixels 1-203', the protection layer 1-205 is disposed on the dielectric layer group 1-202, the optical filter layer 1-206 is disposed on the protection layer 1-205, and performs a light wavelength filtering operation on the forward incident light 1-L1 and the oblique incident light 1-L2. The first transparent medium layer 1-207 is located on the optical filter layer 1-206, and the microlenses 1-210 are located on the first transparent medium layer 1-207. Therefore, in this embodiment, the first light-shielding layers 1-204 and the first light holes 1-204A of fig. 2 are not designed, but the geometric dimensions of the sensing pixels 1-203' (about the dimensions of the first light holes 1-204A in fig. 2) are designed to avoid the interference caused by the oblique incident light 1-L2 in fig. 2, which can effectively simplify the manufacturing process steps and the cost.

Fig. 14 is a schematic partial cross-sectional view of an optical sensor according to a sixth embodiment of the present invention. Fig. 15 is a characteristic graph showing the optical sensor of fig. 14. Fig. 16A and 16B are partial cross-sectional views schematically illustrating two examples of an optical sensor according to a seventh embodiment of the present invention. As shown in fig. 14 to 16, for the sake of avoiding confusion, only hatching lines are drawn on the light shielding layers, and this embodiment is similar to the first embodiment, except that the optical sensors 1 to 200 further include: a plurality of offset microlenses 1-210A arranged in an array and located on or over the first transparent dielectric layers 1-207; and lens shading layers 1-211 similar to those of FIG. 6, located on the first transparent dielectric layers 1-207 and in the gaps 1-G between the offset microlenses 1-210A. In FIG. 16A, the offset microlenses 1-210A are arranged around the periphery of the microlenses 1-210. The microlenses 1-210 respectively inject the parallel normal incident lights 1-L1 into a portion of the total number of the sensor pixels 1-203, and inject the parallel oblique incident lights 1-L2 (see FIG. 2) into an outside of a portion of the total number of the sensor pixels 1-203. The offset microlenses 1-210A respectively emit a plurality of parallel second normal incident lights 1-L1' entering the offset microlenses 1-210A from the outside, through the first transparent medium layers 1-207, and outside the rest of the total number of the sensing pixels 1-203, and emit a plurality of parallel fourth oblique incident lights 1-L5 entering the offset microlenses 1-210A from the outside, inside the rest of the total number of the sensing pixels 1-203. The object 1-F generates the parallel second normal incident lights 1-L1' and the parallel fourth oblique incident lights 1-L5. The second normally incident lights 1-L1' are parallel to the optical axes 1-OAA of the offset microlenses 1-210A. Each fourth obliquely incident light 1-L5 makes a second angle 1-ANG2 with each optical axis 1-OAA (see FIG. 14). As shown in the angle response result of fig. 15, the fourth oblique incident light 1-L5 of about 35 degrees ± 3.5 degrees can be controlled to enter the sensor pixels 1-203 in this embodiment, that is, the second angle 1-ANG2 of this embodiment is between 31.5 degrees and 38.5 degrees, although this second angle 1-ANG2 can be selected by design, in the present invention, the oblique incident light of any angle between 3.5 degrees or 5 degrees and 60 degrees can be incident inside the sensor pixels 1-203. The second angle 1-ANG2 is selectively variable. Fig. 16B is similar to fig. 16A, except that the second light-shielding layers 1-208 and the second transparent dielectric layers 1-209 are incorporated, and related features can be referred to in the description of fig. 9, which are not repeated herein.

Therefore, in fig. 14, the design of the collimator that allows only the forward incident light 1-L1 in the previous embodiments is modified to allow only the fourth oblique incident light 1-L5 to enter all or part of the pixels, or allow the incident light at several oblique angles, or gradually change the incident oblique angle to enter. Since many embodiments are possible, for simplicity of illustration, FIG. 14 depicts only a design that allows a particular oblique angle of incidence. As shown in the figure, new materials or structures are not required to be added (compare with FIG. 2), but the optical axes of the microlenses 1-210 are designed to be shifted so as not to be aligned with the corresponding first light holes 1-204A, so that the light including the normal incidence is blocked by the first light-shielding layer 1-204 (e.g., the second normal incidence light 1-L1' in FIG. 14). From the actual measurement data shown in fig. 14, it can be seen that even when the incident light is inclined by about 35 degrees, the quality of about 3.5 degrees of full width at half maximum can be obtained (compared with the data of the normal incident light shown in fig. 3).

Applying the inventive concept of fig. 14, fig. 16A and 16B combine fig. 2 and 14, in the array of the sensing pixels 1-203, the offset between the optical axis and the optical aperture of the microlens 1-210 corresponding to the center to the periphery is shifted from 0 degree to a predetermined oblique angle (e.g. 35 degrees), wherein several oblique angles (offset of several optical axes) can be allowed, or the incident oblique angle is gradually changed (continuous optical axis shift), so that a larger area 1-CR of the object to be measured (e.g. fingerprint contact area) can be sensed with a smaller area 1-SR of the array of the sensing pixels 1-203, not only increasing the sensing accuracy (increasing with increasing area), but also effectively reducing the cost (decreasing with decreasing sensor area). Those skilled in the art can combine different designs from the description of several embodiments of the present invention without departing from the scope of the present invention.

It is noted that, according to the structure shown in fig. 14, the present embodiment also provides an optical sensor 1-200, which includes a substrate 1-201, a first transparent medium layer 1-207, and a plurality of offset microlenses 1-210A. The substrate 1-201 has a plurality of sensing pixels 1-203 arranged in an array. A first transparent dielectric layer 1-207 is located over the substrate 1-201. The offset microlenses 1-210A are arranged in an array and are located on or over the first transparent dielectric layers 1-207. The offset microlenses 1-210A respectively emit a plurality of parallel normal incident lights 1-L1' entering the offset microlenses 1-210A from the outside, through the first transparent dielectric layers 1-207, to the outside of a part or all of the total number of the sensing pixels 1-203, and emit a plurality of parallel fourth oblique incident lights 1-L5 entering the offset microlenses 1-210A from the outside, to the inside of a part or all of the total number of the sensing pixels 1-203, thereby sensing an image of an object 1-F, the object 1-F generating the parallel normal incident lights 1-L1' and the parallel fourth oblique incident lights 1-L5, the normal incident lights 1-L1' being parallel to the optical axes 1-OAA of the offset microlenses 1-210A, each fourth obliquely incident light 1-L5 makes a second angle 1-ANG2 with each optical axis 1-OAA.

In the optical sensor 1-200, the dielectric layer group 1-202 is located on the substrate 1-201 and covers the sensing pixels 1-203; the first shading layer 1-204 is positioned on the dielectric layer group 1-202 and is provided with a plurality of first light holes 1-204A. The forward incident lights 1-L1' do not pass through the first light holes 1-204A, and the fourth oblique incident lights 1-L5 pass through the first light holes 1-204A. The protective layers 1 to 205 are located on the first light-shielding layers 1 to 204. The optical filter layers 1-206 are disposed on the passivation layers 1-205, and perform a light wavelength filtering operation on the forward incident light 1-L1' and the fourth oblique incident light 1-L5. The first transparent dielectric layer 1-207 is disposed on the optical filter layer 1-206, and the offset microlenses 1-210A are disposed on the first transparent dielectric layer 1-207. The optical sensors 1-200 of fig. 14 can also be applied to the optical sensing systems 1-600 of fig. 1, and the arrangement of the optical sensors 1-600 of fig. 1 can be easily deduced by those skilled in the art, and therefore, the detailed description thereof is omitted here.

Fig. 17A to 17E are schematic structural cross-sectional views illustrating steps of a method for manufacturing an optical sensor according to an eighth embodiment of the present invention. The structure of this embodiment is similar to that of the first embodiment shown in FIG. 2, but is different from the first embodiment in that the present embodiment further includes lens shading layers 1-211. First, as shown in fig. 17A, a substrate 1-201 having a plurality of sensing pixels 1-203 arranged in an array is provided. Next, as shown in FIGS. 17B to 17D, first transparent dielectric layers 1-207 are formed over the substrates 1-201. In detail, as shown in fig. 17B, a dielectric layer group 1-202 is formed on a substrate 1-201, and then a first light shielding layer 1-204 (i.e., a first light shielding layer 1-204 is formed between the substrate 1-201 and a first transparent dielectric layer 1-207) and a first light hole 1-204A are formed on the dielectric layer group 1-202. Then, as shown in FIG. 17C, protective layers 1-205 are formed on the first light-shielding layers 1-204 and the first light holes 1-204A, and optical filter layers 1-206 are formed on the protective layers 1-205. Next, as shown in FIG. 17D, first transparent dielectric layers 1-207 are formed on the optical filter layers 1-206. Then, a plurality of microlenses 1-210 are formed on or over the first transparent dielectric layers 1-207 and arranged in an array, thereby forming the optical sensors 1-200 of FIG. 2.

Next, as shown in FIG. 17E, lens shading layers 1-211 are formed on the first transparent dielectric layers 1-207 and between the microlenses 1-210. That is, lens light-shielding layers 1-211 are formed in the gaps 1-G between the microlenses 1-210.

It is noted that the above-described manufacturing method can also be applied to the offset microlenses 1-210A of FIG. 14 to manufacture the optical sensors 1-200 having the offset microlenses 1-210A. The manufacturing method of the optical sensor 1-200 can be easily adapted by those skilled in the art, and therefore will not be described in detail herein.

Fig. 18A to 18F are schematic structural cross-sectional views illustrating steps of a method for manufacturing an optical sensor according to a ninth embodiment of the present invention. The structure of this embodiment is similar to that of the fourth embodiment shown in FIG. 9, but it is different from the fourth embodiment in that the lens shading layers 1-211 are further provided. Fig. 19A to 19F are schematic structural cross-sectional views illustrating steps of a method for manufacturing an optical sensor according to a tenth embodiment of the present invention. The structure of this embodiment is similar to that of the fifth embodiment shown in FIG. 13, but it is different from the fifth embodiment in further having the second light-shielding layers 1-208, the second transparent dielectric layers 1-209, and the lens light-shielding layers 1-211.

Fig. 17A to 17E, fig. 18A to 18F, and fig. 19A to 19F will be collectively described below by structural diagrams of respective steps of the manufacturing method.

In fig. 17A/18A/19A, the substrate 1-201 may be a semiconductor substrate, such as a silicon substrate. In some embodiments, the Semiconductor substrate may also be an Elemental Semiconductor (Elemental Semiconductor), including: germanium (Germanium); a Compound Semiconductor (Compound Semiconductor) comprising: gallium nitride (galiumnitride), Silicon Carbide (Silicon Carbide), Gallium Arsenide (galiumarsenide), Gallium Phosphide (galiumphosphide), Indium Phosphide (Indium Phosphide), Indium Arsenide (Indium Arsenide) and/or Indium antimonide (Indium antimonide); an Alloy Semiconductor (Alloy Semiconductor) comprising: silicon germanium alloy (SiGe), gallium arsenic phosphide alloy (GaAsP), aluminum indium arsenide alloy (AlInAs), aluminum gallium arsenide alloy (AlGaAs), indium gallium arsenide alloy (GaInAs), indium gallium phosphide alloy (GaInP), and/or indium gallium arsenide phosphide alloy (GaInAsP), or combinations thereof. In other embodiments, the substrate 1-201 may also be a Semiconductor On Insulator (soi) substrate, which may include a bottom plate, a buried oxide layer disposed On the bottom plate, and a Semiconductor layer disposed On the buried oxide layer. In addition, the substrates 1-201 may be of either N-type or P-type conductivity.

In some embodiments, the substrates 1-201 may include various isolation features (not shown) for defining active regions and electrically isolating active region components in/on the substrates 1-201. In some embodiments, the Isolation features include Shallow Trench Isolation (STI) features, local oxidation of silicon (LOCOS) features, other suitable Isolation features, or a combination thereof.

In some embodiments, the substrates 1-201 may include various P-type and/or N-type doped regions (not shown) formed by, for example, ion implantation and/or diffusion processes. In some embodiments, the doped regions may form transistors, photodiodes (photodiodes), and the like. In addition, the substrates 1-201 may also include various active devices, passive devices, and various conductive features (e.g., conductive pads, conductive lines, or vias).

An array of sensing pixels 1-203/1-203 'is formed in the substrate 1-201, and the sensing pixels 1-203/1-203' may be connected to a Signal Processing circuit (not shown). In some embodiments, the number of sensing pixels 1-203/1-203' depends on the size of the area 1-SR of the optical sensing (sensing) region. Each sensing pixel 1-203/1-203' may include one or more photo detectors (photo detectors). In some embodiments, the photo detector may include a photodiode, wherein the photodiode may include a three-Layer structure of a P-type semiconductor Layer, an Intrinsic Layer (Intrinsic Layer), and an N-type semiconductor Layer (photo electric Material), the Intrinsic Layer absorbs light to generate excitons (exiton), and the excitons are separated into electrons and holes at a junction of the P-type semiconductor Layer and the N-type semiconductor Layer to generate a current signal. In some embodiments, the photodetector may be a CMOS image sensor, such as a Front-Side Illumination (FSI) CMOS image sensor or a Back-Side Illumination (BSI) CMOS image sensor. In some other embodiments, the light detector may also include a Charge Coupled Device (CCD) sensor, an active sensor, a passive sensor, other suitable sensor, or a combination thereof. In some embodiments, sensing pixels 1-203/1-203' may convert received light signals into electronic signals via a light detector and process the electronic signals via a signal processing circuit.

In some embodiments, sensing pixels 1-203/1-203' are arranged in an array, thereby forming an array of sensing pixels. However, the cross-sectional view shown in FIG. 2 only shows one column of the array of sensing pixels 1-203/1-203' and is located below the upper surface of the substrate 1-201. It should be noted that the number and arrangement of the sensing pixels 1-203/1-203' shown in all the embodiments are only exemplary, and the embodiments of the present invention are not limited thereto. The sensing pixels 1-203/1-203' may be arranged in any number of rows and columns or in other arrangements.

In fig. 17B/18B/19B, the dielectric layer group 1-202 is formed above the substrate 1-201 and the sensing pixel 1-203/1-203', and the dielectric layer group 1-202 is mainly a combination of BEOL metal connection lines and inter-metal dielectric layers in the back end of the integrated circuit manufacturing process, which are not described herein since they are well known technologies, and it is noted that no metal is required on the light incident path during the design process to avoid shielding. Next, first light-shielding layers 1-204 are formed on the dielectric layer groups 1-202. The first light-shielding layers 1 to 204 may include a light-shielding material having a transmittance of less than 1% or less for light in a wavelength range of 1200 nm or less, but is certainly not limited thereto.

In some embodiments, the first light-shielding layers 1-204 may include a metal material (in this embodiment, the last metal in the integrated circuit manufacturing process), such as tungsten (W), chromium (Cr), aluminum (Al), or titanium (Ti). In this embodiment, the first light shielding layers 1-204 can be blanket formed by, for example, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) (e.g., Vacuum Evaporation (Vacuum Evaporation) Process, Sputtering (Sputtering) Process, Pulsed Laser Deposition (PLD)), Atomic Layer Deposition (ALD), other suitable Deposition processes, or a combination thereof. In some embodiments, the first light shielding layers 1 to 204 may include a polymer material having a light shielding property, such as epoxy, polyimide, or the like. In this embodiment, the first light shielding layers 1-204 may be formed on the dielectric layer sets 1-202 by, for example, Spin-Coating (Spin-Coating), Chemical Vapor Deposition (CVD), other suitable methods, or a combination thereof. The thickness of the first light-shielding layers 1-204 formed by the above method is in a range of about 0.3 micrometers (μm) to about 5 μm, and may be, for example, 2 μm. In some embodiments, the selected thickness of the first light shielding layers 1-204 is determined by the light shielding capability of the materials of the first light shielding layers 1-204, for example, the light shielding capability of the light shielding materials included in the first light shielding layers 1-204 is inversely related to the thickness thereof.

Then, a patterning process is performed on the first light-shielding layers 1 to 204 to form a plurality of first light holes 1 to 204A having a first aperture diameter a 1. The patterning process may include a photolithography process and an etching process. The photolithography process may include, for example: photoresist coating (e.g., spin coating), soft baking, exposing a pattern, post-exposure baking, photoresist developing, cleaning and drying (e.g., hard baking), other suitable processes, or combinations thereof. The etching process may include, for example: a wet etch process, a dry etch process (e.g., Reactive Ion Etching (RIE)), a plasma etch, an Ion mill), other suitable processes, or combinations thereof. The first pore size a1 formed by the above method is in the range of about 0.3 microns to about 50 microns, and may be, for example, about 4 microns to about 5 microns.

It should be noted that the first light holes 1-204A and the sensing pixels 1-203 are shown in fig. 5 as being arranged in a one-to-one manner, however, the first light holes 1-204A and the sensing pixels 1-203 in other embodiments of the present invention may also be arranged in a one-to-many or many-to-one manner. For example, one first light aperture 1-204A may expose more than two sensing pixels 1-203 (not shown), or one sensing pixel 1-203 may expose more than two first light apertures 1-204A (not shown). Fig. 5 shows only an exemplary arrangement, and the present invention is not limited thereto. According to some embodiments of the present invention, by controlling the first aperture a1 of the patterned first light shielding layer 1-204, the range of the angle of field of the incident light can be adjusted.

In FIGS. 17C/18C/19C, a protection layer 1-205 and an optical filter layer 1-206 are formed over the first light-shielding layer 1-204 and the first aperture 1-204A. In the present embodiment, the passivation layers 1-205 are passivation layers of an integrated circuit, which may be silicon oxide or silicon nitride materials or a combination of the two. Of course, the protection layers 1-205 may be selectively omitted (see fig. 20 and fig. 21), for example, in the case that the first light-shielding layers 1-204 are made of a polymer material with light-shielding property. The optical Filter layers 1 to 206 may be Infrared Filter (ICF) layers. Visible Light (Visible Light) has a high Transmittance (Transmittance) for the infrared filter layer, and infrared Light has a high reflectance (Reflectivity) for the infrared filter layer, so that interference of infrared Light from sunlight, for example, can be reduced.

In fig. 17D/fig. 19D, the first transparent dielectric layers 1-207 are formed on the optical filter layers 1-206, and the first transparent dielectric layers 1-207 may include a photo-Curable Material (UV-Curable Material), a thermal-Curable Material (thermosetting Material), or a combination thereof. For example, the first transparent dielectric layers 1-207 may include, for example, polymethyl methacrylate (PMMA), Polyethylene terephthalate (PET), Polyethylene Naphthalate (PEN) Polycarbonate (PC), Perfluorocyclobutyl (PFCB) polymer, Polyimide (PI), acryl resin, Epoxy resin (Epoxy resins), Polypropylene (PP), Polyethylene (PE), Polystyrene (PS), Polyvinyl Chloride (PVC), other suitable materials, or combinations thereof. In some embodiments, Spin-Coating (Spin-Coating), Dry Film (Dry Film) processes, Casting (Casting), Bar Coating (Bar Coating), blade Coating (BladeCoating), Roller Coating (Roller Coating), Wire Bar Coating (Wire Bar Coating), dip Coating (dip Coating), Chemical Vapor Deposition (CVD), other suitable methods may be used. In some embodiments, the thickness of the first transparent dielectric layers 1-207 formed by the above method is in the range of about 1 micron to about 100 microns, for example, 10 to 50 microns. According to some embodiments of the present invention, the first transparent dielectric layers 1-207 formed by the above process have high yield and good quality. In addition, the offset distance of the light after passing through the micro-lenses 1-210 can be increased or decreased by controlling the thickness of the first transparent medium layers 1-207, so that the accuracy of the incident light angle which can be received by the array of the sensing pixels 1-203 is improved.

The microlenses 1-210 are formed on the first transparent dielectric layer 1-207, which may be a homogeneous material or a heterogeneous material (here, homogeneous), and are formed by forming a thick film polymer material into a hemispherical structure by means of cohesive force, usually by high temperature Reflow (Reflow). Of course, the first transparent dielectric layers 1-207 and the microlenses 1-210 can also be made of dielectric materials, such as glass, which can also improve the light transmission. In these embodiments, the hemispherical microlenses 1 to 210 can be formed using the effect of surface tension in a step of drying (e.g., hard baking) in a photolithography process, and the desired radius of curvature of the microlenses 1 to 210 can be adjusted by controlling the temperature of heating. In some embodiments, the microlenses 1-210 are formed to have a thickness in a range between about 1 micron and about 50 microns. It should be noted that the profile of the microlens 1-210 is not limited to a hemispherical shape, and the embodiments of the present invention can also adjust the profile of the microlens 1-210 according to the required incident light angle, for example, the profile can be an aspheric shape (aspheric).

In fig. 18D/19D, a structure of adding a second light-shielding layer 1-208 is shown, and the material characteristics thereof are the same as those of the first light-shielding layer 1-204 in this embodiment, which is not repeated herein. And forming the second light holes 1-208A in the second light shielding layers 1-208 by photolithography, which is the same as the forming method of the first light holes 1-204A, and is not repeated herein.

In fig. 18E/19E, second transparent dielectric layers 1-209 are formed over the second light-shielding layers 1-208 and the second light holes 1-208A, and the materials and the forming methods of the second transparent dielectric layers 1-209 are the same as those of the first transparent dielectric layers 1-207, which is not described herein again. In summary, the second light-shielding layer 1-208 and the second transparent dielectric layer 1-209 are formed between the microlenses 1-210 and the first transparent dielectric layers 1-207. Finally, the micro-lenses 1-210 are formed on the second transparent dielectric layers 1-209, and the forming method and material are described above and omitted here.

In fig. 17E/18F/19F, a lens light-shielding layer 1-211 may be further formed at the blank between the microlenses 1-210 according to the requirement, and the material of the lens light-shielding layer 1-211 may be the same as the material of the first light-shielding layer 1-204/the second light-shielding layer 1-208, and thus is not described in detail.

Fig. 20 is a schematic cross-sectional view of an optical sensor according to a variation of the eighth embodiment of the present invention. In this variation, the structures of the passivation layers 1-205 in FIG. 17E are omitted, and the description of the same parts is omitted. In this variation, the optical filter layers 1-206 are disposed on the first light shielding layers 1-204 and can be filled into the first light holes 1-204A. Thus, the number of manufacturing steps can be reduced, the manufacturing cost can be reduced, and the thickness of the optical sensor can be reduced.

Fig. 21 is a schematic cross-sectional view of an optical sensor according to a variation of the tenth embodiment of the present invention. In this variation, the structures of the passivation layers 1-205 in FIG. 19F are omitted, and the description of the same parts is omitted. In this variation, the optical filter layer 1-206 is located on the dielectric layer group 1-202. Thus, the number of manufacturing steps can be reduced, the manufacturing cost can be reduced, and the thickness of the optical sensor can be reduced.

In summary, embodiments of the present invention provide an optical sensing system including a display (e.g., a screen panel of a mobile device) as a light source. Furthermore, in the optical sensing system, the optical sensor includes microlenses with different lateral offset distances and the configuration of the first opening of the first light shielding layer and/or the configuration of other parameters (such as the aperture of the first opening, the thickness of the first transparent dielectric layer, and/or the radius of curvature of the microlenses) such that the sensing pixel receives light from different incident angle ranges. Accordingly, light rays incident from a certain range of field angle can be incident to the sensing pixel. In addition, because the utility model provides an optical sensing system can receive the incident light of oblique angle for the area in optical sensing district can be less than the determinand area, and realizes reducing optical sensor's area and obtains good image quality's technological effect.

In summary, the embodiments of the present invention can realize that the sensing pixel can also receive the light from the specific range of the angle of view incidence without having an additional light shielding layer by the configuration of the microlens and the sensing pixel with a smaller size according to the above relation, and the thickness of the optical sensor can be reduced. By configuring the circuit design between the sensing pixels with smaller size, the integration density of the optical sensor can be effectively improved. Embodiments of the present invention provide an optical sensor that can utilize a display (e.g., a screen panel of a mobile device) as a light source. Furthermore, the optical sensor includes configurations of the microlens layer and the sensing pixels with different lateral offset distances and/or configurations of other parameters (e.g., the size of the sensing pixel, the refractive index of the first transparent medium layer, the thickness of the first transparent medium layer, the focal length of the microlens, the diameter of the microlens), such that the sensing pixels receive light from different incident angle ranges. Accordingly, light rays incident from a certain range of field angle can be incident to the sensing pixel.

[ second group of examples ]

The utility model provides an optical sensor, optical sensing system and forming method thereof, especially an optical sensor and optical sensing system who is applied to optical fingerprint identification system under screen. The embodiment of the utility model provides an optical sensor has virtual collimatations (virtual collimatations) structure, and this virtual collimation structure has contained the first light shield layer that exposes sensing pixel (sensor pixel), has formed on first light shield layer and cover sensing pixel's first transparent dielectric layer and has formed the microlens on first transparent dielectric layer. The virtual collimation structure utilizes the micro lens to guide incident light to penetrate through the first transparent medium layer to the sensing pixels exposed from the first shading layer. The utility model provides an optical sensor's virtual collimation structure's formation mode compares with traditional technology has the lower advantage of cost and the degree of difficulty. Furthermore, the utility model provides an optical sensor's that contains virtual collimation structure thickness can be less than 500 microns (micrometers, um), and is more frivolous than traditional optical sensor, thus changes in integrating to frivolous mobile electronic device.

Fig. 22 is a simplified schematic diagram illustrating optical sensing systems 2-100 sensing an object 2-F (e.g., a fingerprint of a finger), according to some embodiments of the present invention. The optical sensing system 2-100 comprises a cover layer 2-101 and an optical sensor 2-200 below the cover layer 2-101. When the object 2-F contacts the upper surface of the cover sheet layer 2-101, the object 2-F reflects light emitted from a light source (not shown) to the optical sensor 2-200 to receive a light signal. The object 2-F has various contour features, such as a convex portion 2-F1 and a concave portion 2-F2. Thus, when the object 2-F contacts the upper surface of the cover level 2-101, the protrusions 2-F1 of the object 2-F contact the upper surface of the cover level 2-101, while the recesses 2-F2 of the object 2-F do not contact the upper surface of the cover level 2-101, i.e., there is a gap between the recesses 2-F2 and the upper surface of the cover level 2-101. Therefore, the intensity of the light (such as the light 2-L1 and the light 2-L2) received by the sensing pixels under the convex portion 2-F1 and the concave portion 2-F2 of the object 2-F will be different, so that the contour feature (such as the fingerprint pattern feature) of the object 2-F can be sensed and identified.

Fig. 23 is a schematic diagram illustrating an example configuration sensing target 2-F of the optical sensing system 2-100, according to some embodiments of the invention. The optical sensing system 2-100 comprises a display 2-300 and an optical sensor 2-200 under the display 2-300, wherein the display 2-300 may be an Organic Light-Emitting Diode (OLED) display or a Micro Light-Emitting Diode (Micro LED) display. In some embodiments, the display 2-300 of the optical sensing system 2-100 may be used as a light source, and the emitted light will illuminate the object 2-F contacting with the upper surface of the display 2-300, and the object 2-F will reflect the light to the optical sensor 2-200 disposed under the display 2-300 to sense and identify the contour feature of the object 2-F (e.g., the fingerprint feature of a finger). It should be noted that the optical sensors 2-200 in the optical sensing systems 2-100 may also be configured with other types of light sources, and the embodiments of the present invention are not limited thereto.

According to some embodiments of the present invention, the optical sensor 2-200 shown in FIG. 23 comprises a substrate 2-201 having a sensing pixel array 2-202, a first light shielding layer 2-204 having a plurality of first openings 2-205, a first transparent dielectric layer 2-206, and a microlens layer 2-209. In some embodiments, the plurality of first openings 2-205 of the first light shielding layer 2-204 disposed on the substrate 2-201 expose the plurality of sensing pixels 2-203 of the sensing pixel array 2-202. The first transparent dielectric layers 2-206 disposed on the first light-shielding layers 2-204 cover the sensing pixels 2-203 exposed from the plurality of first openings 2-205. The plurality of microlenses 2-210 included in the microlens layer 2-209 are correspondingly disposed on the first transparent medium layer 2-206. In some embodiments, the microlenses 2-210 can be used to guide light reflected from the target 2-F incident on the optical sensor 2-200 through the first transparent dielectric layer 2-206 to the sensing pixel 2-203.

As shown in fig. 23, the light rays 2-L1, 2-L2, and 2-L3 are incident on the optical sensors 2-200 at different angles, respectively, wherein the light rays 2-L1 and 2-L3 are oblique light, and the light rays 2-L2 are perpendicular light. In one embodiment, the light 2-L1 is incident on one of the microlenses 2-210A of the microlens layer 2-209 and is directed to the sensor pixel 2-203A exposed from one of the first openings 2-205A of the first light-shielding layer 2-204, wherein the centerline 2-C1A of the microlens 2-210A and the centerline 2-C2A of the first opening 2-205A have a first lateral offset distance 2-S1. In another embodiment, the light 2-L2 is incident on another one of the microlenses 2-210B of the microlens layer 2-209 and is directed to the sensor pixel 2-203B exposed from another one of the first openings 2-205B of the first light-shielding layer 2-204, wherein the center lines of the microlenses 2-210B overlap the center lines of the first openings 2-205B. In yet another embodiment, the light 2-L3 is incident on another one of the microlenses 2-210C of the microlens layer 2-209 and is directed to the sensor pixel 2-203C exposed from another one of the first openings 2-205C of the first light shielding layer 2-204, wherein the center line 2-C1C of the microlens 2-210C is offset from the center line 2-C2C of the first opening 2-205C by a second lateral offset distance 2-S2.

According to some embodiments of the present invention, the sensing pixels 2-203 can receive light from different angles by adjusting the lateral offset distance of the center line 2-C1 of the microlens 2-210 and the center line 2-C2 of the first opening 2-205. In addition, the aperture a 1' of the first opening 2-205, the thickness T of the first transparent medium layer 2-206, and/or the radius of curvature R of the microlens 2-210 can also be adjusted together, so that the sensor pixel 2-203 receives Light from different field angles (fields of view) to achieve high Light collection efficiency (Light collection efficiency). Furthermore, in the optical sensor 2-200 according to the present invention, configurations of the microlenses 2-210 and the first openings 2-205 having different lateral offset distances and/or configurations of other parameters (such as the aperture A1' of the first openings 2-205, the thickness T of the first transparent dielectric layer 2-206, and/or the radius of curvature R of the microlenses 2-210) can be integrated. By the configuration of the virtual alignment structure in the optical sensor 2-200 provided by the present invention, the area of the optical sensing region 2-SR and the area of the target contact region 2-CR do not need to be configured in a one-to-one manner (for example, the area of the optical sensing region 2-SR can be smaller than the area of the target contact region 2-CR), thereby achieving the technical effects of reducing the sensing area of the optical sensor 2-200 and obtaining good image quality.

Fig. 24, 25, 26A, 26B are schematic cross-sectional views of optical sensors 2-200 at various stages of processing, according to some embodiments of the present invention. As shown in FIG. 24, in some embodiments, a substrate 2-201 including an array of sensing pixels 2-202 is provided, and a first light shielding layer 2-204 is formed on the substrate 2-201. The base may be a semiconductor substrate, for example: a silicon substrate. In some embodiments, the semiconductor substrate may also be an elemental semiconductor (elementary semiconductor) including: germanium (germanium); a compound semiconductor (compound semiconductor) comprising: gallium nitride (gan nitride), silicon carbide (silicon carbide), gallium arsenide (gan arsenide), gallium phosphide (gan phosphide), indium phosphide (indium phosphide), indium arsenide (indium arsenide), and/or indium antimonide (indium antimonide); an alloy semiconductor (alloy semiconductor) comprising: silicon germanium alloy (SiGe), gallium arsenic phosphide alloy (GaAsP), aluminum indium arsenide alloy (AlInAs), aluminum gallium arsenide alloy (AlGaAs), indium gallium arsenide alloy (GaInAs), indium gallium phosphide alloy (GaInP), and/or indium gallium arsenide phosphide alloy (GaInAsP), or combinations thereof. In other embodiments, the substrate 2-201 may also be a semiconductor on insulator (soi) substrate, which may include a bottom plate, a buried oxide layer disposed on the bottom plate, and a semiconductor layer disposed on the buried oxide layer. In addition, the substrate 2-201 may be of N-type or P-type conductivity.

In some embodiments, the substrates 2-201 may include various isolation features (not shown) to define active regions and to electrically isolate active region devices in/on the substrates 2-201. In some embodiments, the isolation features include Shallow Trench Isolation (STI) features, local oxidation of silicon (LOCOS) features, other suitable isolation features, or a combination thereof.

In some embodiments, the substrates 2-201 may include various P-type and/or N-type doped regions (not shown) formed by, for example, ion implantation and/or diffusion processes. In some embodiments, the doped regions may form transistors, photodiodes (photodiodes), and the like. The substrates 2-201 may also include various active devices, passive devices, and various conductive features (e.g., conductive pads, conductive lines, or vias).

Referring to fig. 24, in some embodiments, the substrate 2-201 includes a sensing pixel array 2-202 having a plurality of sensing pixels 2-203, and the sensing pixels 2-203 may be connected to a signal processing circuit (not shown). In some embodiments, the sensing pixel array 2-202 has a number of sensing pixels 2-203 depending on the area size of the optical sensing region 2-SR. Each sensing pixel 2-203 may include one or more photo detectors (photodetectors). In some embodiments, the photo detector may include a photodiode, wherein the photodiode may include a three-layer photoelectric material (photoelectric material) including a P-type semiconductor layer, an intrinsic layer (intrinsic layer), and an N-type semiconductor layer, the intrinsic layer absorbs light to generate excitons (exiton), and the excitons are separated into electrons and holes at a junction of the P-type semiconductor layer and the N-type semiconductor layer to generate a current signal. In some embodiments, the light detector may be a complementary metal-oxide-semiconductor (CMOS) image sensor, such as a front-side illumination (FSI) CMOS image sensor or a back-side illumination (BSI) CMOS image sensor. In some other embodiments, the light detector may also include a Charged Coupled Device (CCD) sensor, an active sensor, a passive sensor, other suitable sensor, or a combination thereof. In some embodiments, sensing pixels 2-203 may convert received optical signals into electrical signals via a photodetector and process the electrical signals via a signal processing circuit.

In some embodiments, sensing pixels 2-203 are arranged in an array to form sensing pixel array 2-202. However, the cross-sectional view shown in FIG. 24 shows only one column of the sensor pixel array 2-202 and is located below the upper surface of the substrate 2-201. It should be noted that the number and arrangement of the sensing pixels 2-203 included in the sensing pixel array 2-202 shown in fig. 24 are only exemplary, and the present invention is not limited thereto. The sensing pixels 2-203 can be arranged in any number of rows and columns or in other arrangements.

In some embodiments, as shown in FIG. 24, first light-shielding layers 2-204 are formed on the substrates 2-201. The first light-shielding layers 2-204 may comprise light-shielding materials having a light transmittance of less than 1% for light in a wavelength range of 1200 nm or less.

In some embodiments, the first light shielding layers 2-204 may include a metal material, such as tungsten (W), chromium (Cr), aluminum (Al), titanium (Ti), or the like. In this embodiment, the first light-shielding layers 2-204 may be blanket formed on the substrates 2-201 by, for example, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) (e.g., vacuum evaporation (VACUUM) process, sputtering (sputtering) process, Pulsed Laser Deposition (PLD)), Atomic Layer Deposition (ALD), other suitable Deposition processes, or a combination thereof. In some embodiments, the first light shielding layers 2-204 may include a polymer material with light shielding properties, such as epoxy, polyimide, and the like. In this embodiment, the first light-shielding layers 2-204 may be formed on the substrates 2-201 by, for example, spin-coating (spin-coating), Chemical Vapor Deposition (CVD), other suitable methods, or a combination thereof. The thickness of the first light-shielding layers 2-204 formed by the above method is in a range of about 0.3 micrometers (μm) to about 5 micrometers, for example, 2 micrometers. In some embodiments, the selected thickness of the first light-shielding layers 2-204 depends on the light-shielding capability of the materials of the first light-shielding layers 2-204, for example, the light-shielding capability of the light-shielding materials included in the first light-shielding layers 2-204 is inversely related to the thickness thereof.

Referring to fig. 25, according to some embodiments of the present invention, a patterning process may be performed on the first light shielding layers 2 to 204 formed on the substrates 2 to 201. The patterned first light-shielding layer 2-204 has a plurality of first openings 2-205, wherein the first openings 2-205 have a first aperture a 1'. In some embodiments, the plurality of first openings 2-205 of the first light shielding layer 2-204 formed on the substrate 2-201 expose the plurality of sensing pixels 2-203 of the sensing pixel array 2-202. In some embodiments, the patterning process may include a photolithography process and an etching process. The photolithography process may include, for example: photoresist coating (e.g., spin coating), soft baking, exposing a pattern, post-exposure baking, photoresist developing, cleaning and drying (e.g., hard baking), other suitable processes, or combinations thereof. The etching process may include, for example: a wet etch process, a dry etch process (e.g., Reactive Ion Etching (RIE), plasma etching, ion milling), other suitable processes, or combinations thereof. The first pore size a 1' formed by the above method is in the range of about 0.3 microns to about 50 microns, and may be, for example, about 4 microns to about 5 microns.

It should be noted that the first openings 2-205 and the sensing pixels 2-203 are shown in fig. 25 as being arranged in a one-to-one manner, however, the first openings 2-205 and the sensing pixels 2-203 in other embodiments of the present invention may be arranged in a one-to-many or many-to-one manner. For example, one first opening 2-205 may expose more than two sensing pixels 2-203, or one sensing pixel 2-203 may expose more than two first openings 2-205 (not shown). Fig. 25 shows only an exemplary arrangement, and the present invention is not limited thereto. According to some embodiments of the present invention, by controlling the first aperture a 1' of the patterned first light shielding layer 2-204, the range of the angle of field of the incident light can be adjusted. Furthermore, by forming the first light-shielding layer 2-204 on the substrate 2-201, the sensing pixel array 2-202 can be prevented from receiving unwanted light, and crosstalk generated by light incident on the optical sensor 2-200 can be prevented, thereby improving the performance of the optical sensor 2-200.

Referring to fig. 26A, according to some embodiments of the present invention, a first transparent dielectric layer 2-206 may be formed on the first light shielding layer 2-204 and cover the sensing pixel array 2-202 exposed from the first opening 2-205 of the first light shielding layer 2-204. The first transparent dielectric layers 2-206 may comprise a photo-curable material (UV-curable material), a thermal-curable material (thermal curable material), or a combination thereof. For example, the first transparent dielectric layers 2-206 may include, for example, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (PEN) Polycarbonate (PC), Perfluorocyclobutyl (PFCB) polymer, Polyimide (PI), acrylic resin, Epoxy resin (Epoxy resins), Polypropylene (PP), Polyethylene (PE), Polystyrene (PS), Polyvinyl chloride (PVC), other suitable materials, or combinations thereof The first transparent dielectric layers 2-206 are formed on the first light-shielding layers 2-204 and the exposed sensing pixel arrays 2-202 by dip coating (dip coating), Chemical Vapor Deposition (CVD), other suitable methods, or a combination thereof. In some embodiments, the thickness T of the first transparent dielectric layer 2-206 formed by the above method is in the range of about 1 micron to about 100 microns, for example, 50 microns. According to some embodiments of the present invention, the first transparent dielectric layers 2-206 formed by the above process have high yield and good quality. In addition, the offset distance of the light after passing through the micro-lenses 2-210 can be increased or decreased by controlling the thickness T of the first transparent medium layers 2-206, so that the accuracy of the incident light angle received by the sensing pixel arrays 2-202 is improved.

On the other hand, referring to fig. 26B, according to another embodiment of the present invention, the first transparent dielectric sub-layer 2-206A may be formed on the sensing pixel array 2-202, and then the first light shielding layer 2-204 is formed on the first transparent dielectric sub-layer 2-206A, wherein the first transparent dielectric sub-layer 2-206A on the sensing pixel array 2-202 is partially exposed from the first opening 2-205 of the first light shielding layer 2-204. Next, after the formation of the first light-shielding layers 2-204, first transparent dielectric sub-layers 2-206B are formed on the first light-shielding layersLight shielding layers 2-204. By controlling the thickness 2-T of the first transparent dielectric sub-layer 2-206A, 206B_A、2-T_BThe distance that the light rays are deflected after passing through the microlenses 2-210 can be increased or decreased (e.g., the thickness 2-T is increased)_A、2-T_BThe offset distance of the light after passing through the micro-lenses 2-210) can be increased, thereby improving the accuracy of the incident light angle that can be received by the sensing pixel arrays 2-202.

Fig. 27A-27F are schematic cross-sectional views illustrating optical sensors 2-200, according to some embodiments of the present invention. Specifically, FIGS. 27A-27F illustrate cross-sectional views of the optical sensor 2-200 with the centerline 2-C1 of at least one microlens 2-210 overlapping the centerline 2-C2 of the corresponding first aperture 2-205. As shown in FIG. 27A, in some embodiments, the patterned second light shielding layer 2-207 is formed on the first transparent dielectric layer 2-206, wherein the plurality of second openings 2-208 of the patterned second light shielding layer 2-207 correspond to the plurality of sensing pixels 2-203 exposed from the first light shielding layer 2-204. It should be noted that the second openings 2-208 and the sensing pixels 2-203 are shown in fig. 27A as being arranged in a one-to-one manner, however, the second openings 2-208 and the sensing pixels 2-203 in other embodiments of the present invention can also be arranged in a one-to-many or many-to-one manner. For example, light entering one second opening 2-208 may be incident on more than two sensing pixels 2-203, or light entering more than two second openings 2-208 may be incident on the same sensing pixel 2-203 (not shown). Fig. 27A shows only an exemplary arrangement, and the present invention is not limited thereto.

Furthermore, the materials, forming methods, thicknesses, and apertures of the patterned second light-shielding layers 2-207 are substantially the same as those of the first light-shielding layers 2-204, and thus are not described herein again. According to some embodiments of the present invention, the second light shielding layer 2-207 is formed on the first transparent dielectric layer 2-206, so that the sensor pixel array 2-202 can be prevented from receiving unwanted light, and crosstalk generated by light incident on the optical sensor 2-200 can be prevented, thereby improving Signal-to-noise ratio (S/N).

Referring to fig. 27B, in some embodiments, a plurality of microlenses 2-210 included in the microlens layers 2-209 are disposed in the plurality of second openings 2-208 of the second light-shielding layers 2-207, wherein the microlenses 2-210 are used to guide incident light to pass through the first transparent dielectric layers 2-206 to the sensing pixels 2-203 exposed from the first openings 2-205. In some embodiments, the material of the microlens layers 2-209 may include a transparent photo-curable material or a thermosetting material, and the forming method thereof is substantially the same as the forming method of the first transparent dielectric layers 2-206, and thus, the description thereof is omitted here. In these embodiments, the formed microlens layer 2-209 can be subjected to a patterning process to control the radius of curvature R of the microlenses 2-210. In other embodiments, the material of microlens layers 2-209 may be a photoresist material. In this case, the first and second substrates may be formed by, for example: photoresist coating (e.g., spin coating), soft baking, pattern exposure, post exposure baking, photoresist development, cleaning and drying (e.g., hard baking), other suitable processes, or a combination thereof. In these embodiments, the hemispherical microlens 2-210 may be formed using the effect of surface tension in a step of drying (e.g., hard baking) in a photolithography process, and the desired radius of curvature R of the microlens 2-210 may be adjusted by controlling the temperature of heating. In some embodiments, the microlenses 2-210 are formed to have a thickness in a range between about 1 micron and about 50 microns. It should be noted that the profile of the micro-lenses 2-210 is not limited to be hemispherical, and the embodiments of the present invention can also adjust the profile of the micro-lenses 2-210 according to the required incident light angle, for example, the profile can be aspheric (aspheric).

Referring to fig. 27C, in other embodiments, the plurality of microlenses 2-210 included in the microlens layers 2-209 may also be directly disposed on the first transparent dielectric layers 2-206 (i.e., without the light shielding layer between the microlenses 2-210), wherein the microlenses 2-210 are used to guide incident light to pass through the first transparent dielectric layers 2-206 to the sensing pixels 2-203 exposed from the first openings 2-205. In some embodiments, the material and the forming method of the microlens layers 2-209 are substantially the same as those of the microlens layers 2-209 shown in fig. 27B, and thus are not described herein again.

Referring to FIG. 27D, a structure similar to that shown in FIG. 27C is shown, with the difference that the microlens layer 2-209 shown in FIG. 27D is formed subsequent to that shown in FIG. 26B. In these embodiments, the material and the forming method of the microlens layers 2-209 are substantially the same as those of the microlens layers 2-209 shown in fig. 27B and 27C, and thus are not described again. In addition, in other embodiments, a second light-shielding layer may be additionally added between the microlenses 2-210 (e.g., the second light-shielding layers 2-207 in FIG. 27B) in the structure in FIG. 27D.

Referring to fig. 27E, the structure shown is similar to that shown in fig. 27C, except that the microlenses 2-210 and the sensing pixels 2-203 can be arranged in a many-to-one correspondence. As shown in fig. 27E, more than two microlenses 2-210 may correspond to a single sensing pixel 2-203 that may be exposed from two first openings 2-205. It should be noted that the number configurations provided by the embodiments of the present invention are only exemplary, and the corresponding manner of the microlenses 2-210 and the sensing pixels 2-203 can be adjusted according to the product design, which is not limited by the present invention.

Referring to fig. 27F, a partial enlarged view of fig. 27B is shown. According to some embodiments of the present invention, fig. 27F illustrates adjusting the range of the allowed incident angle of the light by controlling the lateral offset distance (i.e. the lateral offset distance between the center line 2-C1 of one microlens 2-210 and the corresponding center line 2-C2 of the first opening 2-205), the radius of curvature R of the microlens 2-210, the thickness T of the first transparent dielectric layer 2-206, and the aperture a 1' of the first opening 2-205 of the first light shielding layer 2-204. In some embodiments, as shown in FIG. 27F, the sensor pixel 2-203 can receive incident light from an angular range of θ ± θ 1 by controlling the lateral offset distance to be equal to zero (i.e., the center line 2-C1 of the microlens 2-210 overlaps the center line 2-C2 of the corresponding first opening 2-205) and controlling the thickness T of the first transparent dielectric layer 2-206 and the aperture A1' of the first opening 2-205. It is understood that although the partial enlarged views of fig. 27C, 27D, and 27E are not shown here, the mechanism for adjusting the range of the incident angle of the allowed light in the embodiment shown in fig. 27C, 27D, and 27E (i.e. without the light shielding layer between the microlenses 2-210) is substantially the same as that in the embodiment shown in fig. 27B (i.e. with the light shielding layer between the microlenses 2-210), and thus will not be described herein again.

According to some embodiments of the present invention, the primary angle θ is the angle between the incident light and the upper surface of the sensing pixels 2-203, and the tolerance ± θ 1 is the angle θ 1 that is offset from the primary angle θ in the clockwise and counterclockwise directions. For example, when the lateral offset distance is equal to zero, the primary angle θ may be 90 degrees, and other parameters (e.g., the thickness T of the first transparent dielectric layers 2-206 and the aperture A1' of the first opening 2-205 of the first light shielding layer 2-204) may be controlled such that the tolerance θ 1 is ± 5 degrees. Thus, the sensing pixels 2-203 in this example can receive light incident from an angular range of 85 degrees to 95 degrees. In some embodiments, the main angle θ is mainly determined by the lateral offset distance, the tolerance ± θ 1 is mainly determined by the aperture of the first opening, and the thickness T of the first transparent medium layer 2-206 can mainly adjust the accuracy of the incident angle that the sensor pixel 2-203 can receive.

Fig. 28A-28C are schematic cross-sectional views of optical sensors 2-200 according to other embodiments of the present invention. Specifically, FIGS. 28A-28C illustrate cross-sectional views of the optical sensor 2-200 including at least one microlens 2-210 having a centerline 2-C1 laterally offset from a centerline 2-C2 of the corresponding first opening 2-205 by a distance 2-S. As shown in FIG. 28A, in some embodiments, the patterned second light shielding layer 2-207 is formed on the first transparent dielectric layer 2-206, wherein the plurality of second openings 2-208 of the patterned second light shielding layer 2-207 correspond to the plurality of sensing pixels 2-203 exposed from the first light shielding layer 2-204. It is noted that the difference between the embodiment shown in fig. 28A and the embodiment shown in fig. 27A is that the second openings 2-208 and the sensing pixels 2-203 in fig. 28A are diagonally arranged in a one-to-one manner. In other words, the center line 2-C1 of one of the microlenses 2-210 of the microlens layer 2-209 is laterally offset from the center line 2-C2 of the corresponding first opening 2-205 by a distance 2-S (see FIG. 28B). However, the second openings 2-208 and the sensing pixels 2-203 in other embodiments of the present invention may be disposed in an oblique manner in a one-to-many or many-to-one manner (not shown). Fig. 28A shows only an exemplary arrangement, and the present invention is not limited thereto.

Referring to FIG. 28B, in some embodiments, the microlenses 2-210 included in the microlens layers 2-209 are disposed in the second openings 2-208 of the second light-shielding layers 2-207 to be obliquely aligned with the sensing pixels 2-203. Wherein the microlenses 2-210 are used to guide oblique incident light to penetrate the first transparent dielectric layer 2-206 and to enter the sensing pixels 2-203 exposed from the first openings 2-205. In some embodiments, the material, forming method, and profile of the microlens layer 2-209 shown in fig. 28B are substantially the same as those of the microlens layer 2-209 shown in fig. 27B, and thus are not described in detail herein. In other embodiments, the plurality of microlenses 2-210 included in the microlens layer 2-209 may also be directly disposed on the first transparent dielectric layer 2-206 (i.e., without a light-shielding layer (not shown) between the microlenses 2-210) so as to obliquely correspond to the sensing pixels 2-203. Wherein the microlenses 2-210 are used to guide oblique incident light to penetrate the first transparent dielectric layer 2-206 and enter the sensing pixel 2-203 under the first opening 2-205. In these embodiments, the material and the forming method of the microlens layers 2-209 are substantially the same as those of the microlens layers 2-209 shown in fig. 27C, and thus the description thereof is omitted here.

Referring to fig. 28C, a partial enlarged view of fig. 28B is shown. According to some embodiments of the present invention, FIG. 28C illustrates adjusting the range of allowed angles of incidence of light rays by controlling the lateral offset distance 2-S, the radius of curvature R of the microlenses 2-210, the thickness T of the first transparent dielectric layer 2-206, and the aperture A1' of the first opening 2-205 of the first light shield layer 2-204. In some embodiments, as shown in FIG. 28C, the sensor pixel 2-203 can receive incident light from an angular range of θ '+ - θ 2 by controlling the lateral offset distance 2-S (i.e., the lateral offset distance between the centerline 2-C1 of at least one of the microlenses 2-210 of the microlens layer 2-209 and the centerline 2-C2 of the corresponding first opening 2-205) and controlling the thickness T of the first transparent dielectric layer 2-206 and the aperture A1' of the first opening 2-205.

According to some embodiments of the present invention, the main angle θ 'is an angle between the incident light and the upper surface of the sensor pixel 2-203, and the tolerance ± θ 2 is an angle θ 2 offset from the main angle θ' in clockwise and counterclockwise directions. For example, the lateral offset distance may be controlled such that the main angle θ 'may be 45 degrees, and other parameters (e.g., the thickness T of the first transparent dielectric layers 2-206 and the aperture A1' of the first opening 2-205 of the first light shielding layer 2-204) may be controlled such that the tolerance θ 2 is ± 5 degrees. Thus, the sensing pixels 2-203 in this example may receive light incident from an angular range of 40 degrees to 50 degrees. In some embodiments, the dominant angle θ 'is mainly determined by the lateral offset distance 2-S, the tolerance ± θ 2 is mainly determined by the aperture A1' of the first opening, and the thickness T of the first transparent medium layer 2-206 can mainly adjust the accuracy of the incident angle that the sensor pixel 2-203 can receive. It should be noted that the angle ranges provided by the embodiments of the present invention are only exemplary, and the present invention is not limited thereto. The embodiment of the utility model provides a but as required control structure adjusts above-mentioned each parameter.

According to the embodiments shown in fig. 27A to 27F and fig. 28A to 28C, the present invention provides an optical sensor 2-200 that can integrate the configurations of the microlenses 2-210 and the first openings 2-205 with different lateral offset distances and/or the configurations of other parameters (such as the aperture a 1' of the first openings 2-205, the thickness T of the first transparent dielectric layer 2-206, and/or the radius of curvature R of the microlenses 2-210), such as the structures shown in fig. 27B and fig. 28B, into the optical sensor 2-200. By the arrangement of the structure in the optical sensor 2-200 provided by the present invention, the area of the optical sensing region 2-SR and the area of the target contact region 2-CR do not need to be arranged in a one-to-one manner (for example, the area of the optical sensing region 2-SR can be smaller than the area of the target contact region 2-CR) (as shown in fig. 23), so as to achieve the technical effects of reducing the area of the optical sensor 2-200 and obtaining good image quality. It is understood that the plurality of microlenses 2-210 can have the same or different radii of curvature R, and the first openings 2-205 can also have the same or different apertures a 1'.

Fig. 29 to 32 are schematic cross-sectional views illustrating optical sensors 2-200 comprising additional structures according to some other embodiments of the present invention, e.g. based on the structures shown in fig. 27B, 27C, 27D, 27E, 28B. Referring to fig. 29, a protective layer 2-800 conformably covering the microlens layer 2-209 and the second light shield layer 2-207 is shown, in accordance with some other embodiments of the present invention. It is understood that the protection layers 2-800 can also be formed on the structures shown in fig. 27C, 27D and 27E, wherein the protection layers 2-800 directly contact the first transparent dielectric layers 2-206 (not shown) under the microlens layers 2-209 because there is no light shielding layer between the microlenses 2-210. In some embodiments, the passivation layer 2-800 may be formed of silicon dioxide, and the silicon dioxide may be deposited on the microlens layer 2-209 and the second light shielding layer 2-207 by plasma-enhanced CVD (PECVD), remote plasma-enhanced CVD (RPECVD), other similar methods, or a combination thereof. The protective layer 2-800 formed of silicon dioxide does not affect the ability of the microlens layer 2-209 to direct light. Moreover, the protection layer 2-800 can effectively protect the microlens layer 2-209 from being damaged in the subsequent packaging process of the microlens layer 2-209.

Referring to fig. 30, a filter layer 900 disposed between the first transparent dielectric layers 2-206 and the second light shielding layers 2-207 and/or the microlenses 2-210 is shown according to some other embodiments of the present invention. In some embodiments, the structure illustrated in FIG. 30 may be formed by continuing with a portion of the structure of the optical sensors 2-200 formed in FIG. 26A. In other embodiments, part of the structure of the optical sensor 2-200 formed in fig. 26B may be continued to form the filter layer 2-900 (not shown) as shown in fig. 30. After forming the first transparent dielectric layers 2-206 (or the first transparent dielectric sub-layers 2-206A), filter layers 2-900 may be formed over the first transparent dielectric layers 2-206, and the second light shield layers 2-207 and microlens layers 2-209 may be formed after forming the filter layers 2-900. As previously mentioned, in other embodiments, the second light-shielding layers 2-207 may not be present.

Furthermore, in some embodiments, the filter layers 2-900 may be infrared filters (IRCs). Visible light (visible light) has a high transmittance for the infrared filter layer, while infrared light has a low transmittance for the infrared filter layer. In some embodiments, the color shift of the optical sensor 2-200 can be corrected and the interference of infrared rays can be reduced by disposing the filter layer 2-900 (e.g., an infrared filter layer) between the first transparent dielectric layer 2-206 and the second light shielding layer 2-207 and/or the microlens 2-210.

Referring to fig. 31A, a second transparent dielectric layer 2-1001 disposed between the first transparent dielectric layer 2-206 and the second light shielding layer 2-207 and a patterned third light shielding layer 2-1002 disposed between the first transparent dielectric layer 2-206 and the second transparent dielectric layer 2-1001 are shown according to some other embodiments of the present invention. In some embodiments, the structure shown in FIG. 31A may be formed by continuing with a portion of the structure of the optical sensors 2-200 formed in FIG. 26A. On the other hand, referring to fig. 31B, the structure shown is similar to the structure shown in fig. 31A, except that the structure shown in fig. 31B is such that the plurality of microlenses 2-210 included in the microlens layer 2-209 are directly disposed on the first transparent dielectric layer 2-206 (i.e., without the light-shielding layer between the microlenses 2-210).

After the first transparent dielectric layers 2-206 are formed, a patterned third light-shielding layer 2-1002 may be formed over the first transparent dielectric layers 2-206. In some embodiments, the materials, forming methods, thicknesses, and apertures of the patterned third light-shielding layers 2-1002 are substantially the same as those of the patterned first light-shielding layers 2-204 and the patterned second light-shielding layers 2-207, and thus are not described herein again. In some embodiments, the materials and the forming method of the second transparent dielectric layers 2-1001 are substantially the same as those of the first transparent dielectric layers 2-206, and thus are not described herein again. The thickness T of the second transparent dielectric layer 2-1001 is in the range of about 1 micron to about 100 microns, and may be 30 microns, for example.

According to some embodiments of the present invention, by forming the third light shielding layer 2-1002 on the first transparent dielectric layer 2-206, the sensing pixel array 2-202 can be prevented from receiving unwanted light, and crosstalk generated by light incident to the optical sensor 2-200 can be prevented, thereby improving the signal-to-noise ratio (S/N). For example, as shown in FIGS. 31A and 31B, the center line 2-C2 of at least one first opening 2-205, the center line 2-C3 of a corresponding one of the third openings 2-1003 in the third light-shielding layer 2-1002, and the center line 2-C1 of a corresponding microlens 2-210 are overlapped. In fig. 31A, 31B, light ray 2-L1 is incident light that can be received by the sensing pixel 2-203, and light ray 2-L2 is light from outside the range of allowed incident angles to the sensing pixel 2-203. Therefore, the light 2-L2 is absorbed or blocked by the third light-shielding layers 2-1002 and cannot enter the sensing pixels 2-203.

Referring to fig. 32, the structure shown in fig. 32 is similar to that shown in fig. 31A. The difference between FIG. 32 and FIG. 31A is that the centerline 2-C2 of at least one first opening 2-205, the centerline 2-C3 of a corresponding third opening 2-1003 of the third opacifying layer 2-1002, and the centerline 2-C1 of a corresponding microlens 2-210 do not overlap. In FIG. 32, light ray 2-L1 is the incident light that can be received by the sensing pixel 2-203, and light ray 2-L2 is the light ray from outside the range of allowed incident angles to the sensing pixel 2-203. Therefore, the light 2-L2 is absorbed or blocked by the third light-shielding layers 2-1002 and cannot enter the sensing pixels 2-203. According to some embodiments of the present invention, the structure illustrated in fig. 32 may facilitate sensing pixels 2-203 to receive light at oblique angles of incidence. Furthermore, by forming the third light-shielding layer 2-1002 on the first transparent dielectric layer 2-206, the sensing pixel array 2-202 can be prevented from receiving unwanted light, and crosstalk generated by light incident to the optical sensor 2-200 can be prevented, thereby improving the signal-to-noise ratio (S/N).

It is noted that although various additional structures included in the optical sensors 2-200 shown in fig. 29-32 are described in different embodiments, these additional structures may be collocated with each other and integrated into a single optical sensor 2-200 as needed.

Fig. 33 is a cross-sectional schematic diagram illustrating an optical sensing system 2-100 incorporating an example structure of a display 2-300, in accordance with some embodiments of the present invention. In some embodiments, the displays 2-300 may include organic light emitting diode displays or micro light emitting diode displays. It is noted that, in order to briefly describe the embodiments of the present invention and to highlight the features thereof, the package structure of the optical sensor 2-200 and the display 2-300 shown in fig. 33 will be described in detail in the embodiments shown in fig. 34 and 35. As shown in fig. 33, the display 2-300 comprises a first light transmissive material 2-1201, a thin-film transistor (TFT) layer 2-1202 on the first light transmissive material 2-1201, a cathode layer 2-1203 on the TFT layer 2-1202, a light emitting layer 2-1204 on the cathode layer 2-1203, an anode layer 2-1205 on the light emitting layer 2-1204, a second light transmissive material 2-1206 on the anode layer 2-1205, a polarizer 2-1207 on the second light transmissive material 2-1206, an adhesive layer 2-1208 on the polarizer 2-1207, and a light transmissive cover plate 2-1209 on the adhesive layer 2-1208. In some embodiments, display 2-300 further includes aperture 2-1210 disposed within cathode layer 2-1203 and above thin-film-transistor layer 2-1202. By the arrangement of the aperture 2-1210, the light emitted from the light emitting layer 2-1204 can be reflected by the object 2-F and then incident on the optical sensor 2-200 without being blocked by the cathode layer 2-1203. On the other hand, the cathode layers 2-1203 formed by transparent electrode materials can be directly used, so that the light reflected by the target 2-F is incident to the optical sensors 2-200 and is not shielded. Of course, the above-described structures of, for example, OLED displays may have material layers added or removed or changed as the technology evolves, and it is noted that the inventive concept does not change accordingly.

In some embodiments, the first light transmissive material 2-1201, the second light transmissive material 2-1206, and the light transmissive cover plate 2-1209 may comprise, for example, glass, quartz (quartz), sapphire (sapphire), or a transparent polymer, which allows light to pass through. In some embodiments, the cathode layer 2-1203 and the anode layer 2-1205 may be transparent electrode materials (e.g., indium tin oxide) so that light incident on the optical sensor 2-200 after being reflected by the target 2-F is not shielded. In some embodiments, light-emitting layers 2-1204 may include organic light-emitting layers or micro light-emitting diode layers, depending on the type of display 2-300. In the optical sensing system 2-100 provided by the present invention, the light emitting layer 2-1204 in the display 2-300 can be used as a light source, the light emitted therefrom will irradiate the target object 2-F contacting with the upper surface of the transparent cover plate 2-1209, and the light will pass through the display 2-300 after being reflected by the target object 2-F and enter the optical sensor 2-200.

Fig. 34-35 are schematic cross-sectional views illustrating optical sensing systems 2-100 including different package structures according to some other embodiments of the present invention. However, in order to briefly describe the embodiments of the present invention and to highlight the features thereof, the specific structure of the displays 2-300 is not shown in fig. 34 to 35. In some embodiments, the optical sensing systems 2-100 provided by the present invention may be formed by a Chip On Board (COB) process. Specifically, referring to FIG. 34, in some embodiments, the optical sensor 2-200 is bonded to a circuit board 2-1303 and electrically connects the conductive pad 2-1301 in the substrate 2-201 of the optical sensor 2-200 to the circuit board 2-1303 via a wire 2-1302. Then, an adhesive material is coated on the circuit board 2-1303 by a dispensing process and surrounds the optical sensor 2-200 to form a frame 2-1305, and the optical sensor 2-200 and the circuit board 2-1303 therebelow are adhered to the lower surface of the display 2-300 (e.g., the first light-transmitting material 2-1201 of the display 2-300) through the frame 2-1305. In some embodiments, the wires 2-1302 may be formed of Aluminum (Aluminum), Copper (Copper), Gold (Gold), other suitable conductive materials, alloys thereof, or combinations thereof. In some embodiments, the adhesive material forming the frame may be a photo-curable material, a thermo-curable material, or other similar material. In some embodiments, the circuit board 2-1303 may be a Flexible Printed Circuit (FPC), and the flexible circuit board 2-1303 may be disposed on a stiffener 2-1304 (e.g., a metal stiffener).

In other embodiments, as shown in fig. 35, another package structure is also provided in the embodiments of the present invention. In some embodiments, after bonding the optical sensor 2-200 to the circuit board 2-1303, a frame 2-1401 (e.g., a plastic frame) is disposed on the circuit board 2-1303 and surrounds the optical sensor 2-200, an adhesive material 2-1402 is coated in the frame 2-1401 and surrounds the optical sensor 2-200, and the optical sensor 2-200 and the circuit board 2-1303 therebelow are adhered to the lower surface of the display 2-300 (e.g., the first light-transmissive material 2-1201 of the display 2-300) by the adhesive layer 2-1403.

In the exemplary packaging structures shown in FIGS. 34, 35, the displays 2-300 may comprise organic light emitting diode displays or micro light emitting diode displays. By the arrangement of the optical sensor 2-200 under the display 2-300 according to some embodiments of the present invention, the display 2-300 can be used as a light source, the light emitted therefrom will irradiate the target object 2-F contacting the upper surface of the display 2-300, and the light will be reflected by the target object 2-F and then incident on the optical sensor 2-200. It should be noted that the optical sensors 2-200 in the optical sensing systems 2-100 may also be configured with other types of light sources, and the embodiments of the present invention are not limited thereto. Furthermore, some embodiments of the present invention provide optical sensing systems 2-100 that can effectively improve reliability by the above-mentioned package structure.

Fig. 36 is a schematic diagram illustrating optical sensing systems 2-100 receiving incident light at different angles 2-L1, 2-L2, 2-L3, according to some embodiments of the present invention. In some embodiments, as shown in FIG. 36, when an object 2-F (e.g., a fingerprint) contacts the transparent cover 2-1209 of the display 2-300, light emitted by the luminescent layer 2-1204 will be reflected by the object 2-F to be incident at different angles (e.g., rays 2-L1, 2-L2, 2-L3) to the optical sensor 2-200 disposed below the display 2-300. Where rays 2-L1 and 2-L3 are obliquely incident light and rays 2-L2 are normally incident light. In the optical sensing system 2-100 provided by the present invention, configurations of the microlenses 2-210 and the first openings 2-205 having different lateral offset distances and/or configurations of other parameters (e.g., the aperture a 1' of the first openings 2-205, the thickness T of the first transparent dielectric layer 2-206, and/or the radius of curvature R of the microlenses 2-210) can be integrated. By the arrangement of the structure in the optical sensor 2-200 provided by the present invention, the area of the optical sensing region 2-SR and the area of the target contact region 2-CR do not need to be arranged in a one-to-one manner (for example, the area of the optical sensing region 2-SR can be smaller than the area of the target contact region 2-CR), thereby achieving the technical effects of reducing the area of the optical sensor 2-200 and obtaining good image quality. Also, the displays 2-300 comprised by the optical sensing systems 2-100 may provide the required light sources, and thus no additional separate light sources are required.

In summary, embodiments of the present invention provide an optical sensing system including a display (e.g., a screen panel of a mobile device) as a light source. Furthermore, in the optical sensing system, the configuration of the first opening of the first light shielding layer and the microlens layer with different lateral offset distances and/or the configuration of other parameters (such as the aperture of the first opening, the thickness of the first transparent dielectric layer, and/or the radius of curvature of the microlens) included in the optical sensor may enable the sensing pixel to receive light from different incident angle ranges. Accordingly, light rays incident from a certain range of field angle can be incident to the sensing pixel. In addition, the optical sensing system provided by the utility model can receive the light incident at an oblique angle, so that the area of the optical sensing area 2-SR can be smaller than the area of the target object contact area 2-CR, thereby realizing the technical effects of reducing the area of the optical sensor and obtaining good image quality.

Fig. 37 and 38 are schematic cross-sectional views of optical sensors 2-200' at various stages of processing according to further embodiments of the present invention. Fig. 39A, 39B are schematic cross-sectional views of optical sensors 2-200' according to further embodiments of the present invention. Fig. 40 is a partially enlarged schematic view showing a cross section of an arrangement of microlenses and sensor pixels according to other embodiments of the present invention. The optical sensor 2-200 'may be similar to the optical sensors (e.g., optical sensors 2-200) of the above-described embodiments, and the differences between the optical sensor 2-200' and the optical sensors of the above-described embodiments will be discussed in the following paragraphs.

Referring to fig. 37, in some embodiments, a substrate 2-201 includes a sensor pixel array 2-202 having a plurality of sensor pixels 2-203, and a circuit structure 2-1601 may be disposed between two adjacent sensor pixels 2-203, for example: a memory device or a signal processing circuit (signal processing circuit). In some embodiments, the sensing pixel array 2-202 has a number of sensing pixels 2-203 depending on the area size of the optical sensing region 2-SR. The width P of the sensing pixels 2-203, depending on the system design requirements for optical sensing, can be designed in the range of 3 microns to 10 microns.

It should be noted that the number and arrangement of the sensing pixels 2-203 included in the sensing pixel array 2-202 shown in fig. 37 are much the same as those shown in fig. 24, and thus are not repeated herein.

Referring next to fig. 38, according to other embodiments of the present invention, a first transparent dielectric layer 2-206 may be formed directly on the substrate 2-201 and cover the sensing pixel array 2-202. In this embodiment, the sensing pixel arrays 2-202 are not covered by the light-shielding layer. The materials and the forming methods of the first transparent dielectric layers 2-206 are substantially the same as those of the first transparent dielectric layers 2-206 shown in fig. 26A, and thus the description thereof is omitted here. According to other embodiments of the present invention, the choice of the material of the first transparent medium layer 2-206 can be determined according to the desired refractive index. In some embodiments, the thickness T of the first transparent dielectric layer 2-206 formed by the above method is in the range of about 1 micron to about 100 microns, for example, 50 microns. The offset distance of the light after passing through the micro-lenses 2-210 can be increased or decreased by controlling the thickness T of the first transparent medium layers 2-206, so as to improve the accuracy of the incident light angle which can be received by the sensing pixel arrays 2-202.

Referring next to FIG. 39A, a cross-sectional schematic view of an optical sensor 2-200' is shown that includes at least one microlens 2-210 having a centerline 2-C1 that overlaps a centerline 2-C2 of a corresponding sensor pixel 2-203. In these embodiments, a plurality of microlenses 2-210 included in the microlens layer 2-209 are disposed in a plurality of openings of the second light-shielding layer 2-207, wherein the microlenses 2-210 are used to guide incident light to pass through the first transparent dielectric layer 2-206 to the sensing pixels 2-203. In these embodiments, the formed microlens layer 2-209 can be subjected to a patterning process to control the focal length f of the microlenses 2-210. In this embodiment, the diameter D of the microlenses 2-210 can be adjusted to be in the range of 10 micrometers to 50 micrometers, such as 30 micrometers, according to the image capturing resolution. According to some embodiments of the present invention, the ratio of the width P of the sensing pixels 2-203 to the diameter D of the microlenses 2-210 can be adjusted within the range of 0.06 to 1, so as to achieve the purpose of effectively improving the image capturing resolution. In some embodiments, the material and the forming method of the microlens layer 2-209 are substantially the same as those of the microlens layer 2-209 shown in fig. 27B, and thus are not described herein again. Furthermore, in some embodiments, the optical sensor 2-200' may not have the second light shielding layer 2-207. That is, there is no light-shielding layer between the microlenses 2-210.

Referring next to fig. 39B, the difference between the illustrated embodiment and the embodiment illustrated in fig. 39A is that the microlenses 2-210 and the sensing pixels 2-203 in fig. 39B are arranged in an oblique correspondence in a one-to-one manner. In other words, the centerline 2-C1 of one of the microlenses 2-210 of the microlens layer 2-209 is laterally offset from the centerline 2-C2 of the corresponding sensor pixel 2-203 by a distance 2-S. However, the microlenses 2-210 and the sensing pixels 2-203 in other embodiments of the present invention may be arranged in a one-to-many or many-to-one manner in an oblique manner (not shown). Fig. 39B shows only an exemplary arrangement, and the present invention is not limited thereto.

According to the embodiment illustrated in fig. 39A-39B, the optical sensor 2-200' comprises a substrate 2-201 and a sensor pixel array 2-202 is arranged on the substrate 2-201, wherein the sensor pixel array 2-202 comprises a plurality of sensor pixels 203. The first transparent dielectric layer 2-206 is positioned over the sensing pixel array 2-202. Microlens layer 2-209 is positioned over first transparent dielectric layer 2-206 and includes a plurality of microlenses 2-210. The microlenses 2-210 guide incident light to pass through the first transparent dielectric layer 2-206 to the sensing pixels 2-203. In some embodiments, the width P of the sensing pixel 203 is between 10 microns and 10 microns, and the diameter D of the microlens 2-210 is between 10 microns and 50 microns. In addition, the second light-shielding layer 2-207 is disposed above the first transparent dielectric layer 2-206, and the microlenses 2-210 of the microlens layer 2-209 are correspondingly disposed in the openings of the second light-shielding layer 2-207. As previously mentioned, in other embodiments, the optical sensor 2-200' may not have the second light shield layer 2-207. That is, there is no light-shielding layer between the microlenses 2-210.

In the optical sensor 2-200 'provided in the present invention, the configuration of the microlenses 2-210 and the sensing pixels 2-203 with different lateral offset distances and/or the configuration of other parameters (such as the size (e.g., width P) of the sensing pixels 2-203, the thickness T of the first transparent dielectric layer 2-206, and/or the focal length f of the microlenses 2-210) can be integrated, for example, the structure shown in fig. 39A and 39B can be integrated into the optical sensor 2-200'. By the arrangement of the structure in the optical sensor 2-200' provided by the present invention, the area of the optical sensing region 2-SR and the area of the target contact region 2-CR do not need to be arranged in a one-to-one manner (for example, the area of the optical sensing region 2-SR can be smaller than the area of the target contact region 2-CR), thereby achieving the technical effects of reducing the area of the optical sensor 2-200 and obtaining good image quality.

Next, fig. 40 is a partially enlarged view of fig. 39A. According to some embodiments of the present invention, fig. 40 illustrates adjusting the range of allowed incident angles (e.g., oblique incident light) of light using the lateral offset distance 2-S of the center line 2-C1 of the control microlens 2-210 from the center line 2-C2 of the corresponding sensor pixel 2-203, the width P of the sensor pixel 2-203, the refractive index n of the first transparent dielectric layer 2-206, the thickness T of the first transparent dielectric layer 2-206, the focal length f of the microlens 2-210, and the diameter D of the microlens 2-210. Specifically, if the parameters are related to the incident angle θ of the incident light L_iAnd angle of refraction theta of incident light L_rThe following relationships are satisfied:

sinθ_i＝n*sinθ_r(formula one)

f＝((D/2)²+T²)^1/2(formula II)

P/2＝f*tanθ_r(III) in the formula (III),

the incident light L can be guided by the microlenses 2-210 to pass through the first transparent dielectric layers 2-206 and then directly enter the sensing pixels 2-203 having the widths P according to the above relation, so that the sensing pixels 2-203 can receive light from a specific range of angles of view without an additional light shielding layer. Further, the thickness of the optical sensor 2-200' can be effectively reduced by the above configuration.

It is noted that various additional structures (e.g., the protection layer 800 and the filter layer 900) included in the optical sensors 2-200 shown in fig. 29 and 30 can also be applied to the optical sensors 2-200 '(not shown), and all of the additional structures can be matched with each other and integrated into a single optical sensor 2-200' as required. Moreover, the optical sensor 2-200' may also be combined with the display 2-300 shown in fig. 33 and the package structure (not shown) shown in fig. 34 and 35, which are not described herein again. By disposing the optical sensor 2-200 'of the present invention under the display, the display can be used as a light source, and the light emitted from the light source will irradiate the target object close to or contacting with the upper surface of the display, and the light will be reflected by the target object and then incident to the optical sensor 2-200'. It should be noted that the optical sensor 2-200 'may also be configured with other types of light sources, such as a separate light source (e.g., an LED light source) disposed at the side or obliquely above the optical sensor 2-200', and the embodiments of the present invention are not limited thereto. Furthermore, some embodiments of the present invention provide a combination of the optical sensor 2-200' and the display, which can effectively improve the reliability by the above-mentioned package structure.

In summary, the embodiments of the present invention can realize that the sensing pixel can also receive the light from the specific range of the angle of view incidence without having an additional light shielding layer through the configuration of the microlens and the sensing pixel with a smaller size according to the above relation, and the thickness of the optical sensor can be reduced. By configuring the circuit structure between the sensing pixels with smaller size, the integration density of the optical sensor can be effectively improved. Embodiments of the present invention provide an optical sensor that can utilize a display (e.g., a screen panel of a mobile device) as a light source. Furthermore, the optical sensor includes a configuration of the microlens layer and the sensing pixels with different lateral offset distances and/or a configuration of other parameters (such as the size of the sensing pixels, the refractive index of the first transparent medium layer, the thickness of the first transparent medium layer, the focal length of the microlenses, and the diameter of the microlenses) such that the sensing pixels receive light from different incident angle ranges. Accordingly, light rays incident from a certain range of field angle can be incident to the sensing pixel. Because the optical sensing system provided by the utility model can receive the light of oblique angle incidence for the area of optical sensing district 2-SR can be less than the area of target object contact zone 2-CR, and realize reducing optical sensor's area and gain good image quality's technological effect.

It is noted that although the exemplary embodiments disclosed herein (e.g., the first and second embodiments) relate to a fingerprint sensing system applied to a mobile device, the techniques provided by the present invention can also be applied to other types of sensors, not only to a sensor device for detecting a fingerprint. For example, the present invention can also be applied to detecting fingerprint images of epidermis/dermis (epidermis/dermis), subcutaneous vein (subcutaneous) images, and measuring other biological characteristic images or information (such as blood oxygen concentration (blood oxygen level), heartbeat (heartbeat), etc.), and is not limited to the scope disclosed in the above embodiments.

Several embodiments are summarized above so that those skilled in the art to which the present invention pertains can better understand the point of the embodiments of the present invention. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent processes and structures do not depart from the spirit and scope of the present invention, and that they may make various changes, substitutions and alterations herein without departing from the spirit and scope of the present invention.

Claims

1. An optical sensor, comprising:

a substrate having a plurality of sensing pixels arranged in an array;

the first transparent medium layer is positioned above the substrate; and

and a plurality of microlenses arranged in an array and located on or above the first transparent medium layer, wherein the plurality of microlenses respectively inject a plurality of parallel forward incident lights entering the plurality of microlenses from the outside into a part or all of the total number of the plurality of sensor pixels through the first transparent medium layer, and inject a plurality of parallel oblique incident lights entering the plurality of microlenses from the outside into a part or all of the total number of the plurality of sensor pixels, thereby sensing an image of an object, the object generating the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, the plurality of parallel forward incident lights being parallel to a plurality of optical axes of the plurality of microlenses, each of the plurality of parallel oblique incident lights making an angle with each of the optical axes.

2. The optical sensor of claim 1, wherein the angle is between 5 degrees and 90 degrees.

3. The optical sensor of claim 1, wherein the optical sensor further comprises:

a first light shielding layer having a plurality of first light holes, through which the parallel forward incident light passes and through which the parallel oblique incident light does not pass; and

and the optical filtering layer is positioned on the first shading layer and performs light wavelength filtering action on the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, wherein the first transparent medium layer is positioned on the optical filtering layer, and the plurality of micro lenses are positioned on the first transparent medium layer.

4. The optical sensor of claim 1, wherein the optical sensor further comprises:

an optical filter plate is arranged above the micro lenses and used for executing light wavelength filtering action on the parallel forward incident lights and the parallel oblique incident lights, and the micro lenses are arranged on the first transparent medium layer.

5. The optical sensor of claim 1, wherein the optical sensor further comprises:

and the lens shading layer is positioned on the first transparent medium layer and in the gaps among the micro lenses so as to shade a plurality of parallel second oblique incident lights entering the gaps from the outside from entering the first transparent medium layer and the sensing pixels.

6. The optical sensor of claim 1, wherein the optical sensor further comprises:

a first light shielding layer having a plurality of first light holes, through which the parallel forward incident light passes and through which the parallel oblique incident light does not pass;

an optical filter layer located on the first light-shielding layer and performing a light wavelength filtering operation on the parallel forward incident lights and the parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer, and the microlenses are located on the first transparent medium layer; and

7. The optical sensor of claim 1, wherein the optical sensor further comprises:

the second shading layer is positioned on the first transparent medium layer and is provided with a plurality of second light holes, and the plurality of optical axes respectively pass through the plurality of second light holes; and

the second transparent dielectric layer is positioned on the second shading layer, the microlenses are positioned on the second transparent dielectric layer, one of the microlenses is defined as a target microlens, the optical axis of the target microlens is defined as a target optical axis, the sensing pixel passed by the target optical axis is defined as a target sensing pixel, the microlenses adjacent to the target microlens are defined as adjacent microlenses, and the second shading layer shades a plurality of parallel third oblique incident lights entering the adjacent microlenses from the outside from entering the first transparent dielectric layer and the target sensing pixel.

8. The optical sensor of claim 1, wherein the optical sensor further comprises:

an optical filter layer located on the first light shielding layer and performing a light wavelength filtering operation on the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer;

9. The optical sensor of claim 1, wherein the optical sensor further comprises:

the first shading layer is positioned above the substrate and is provided with a plurality of first light holes; and

a second light-shielding layer located above the first light-shielding layer and having a plurality of second light holes, wherein the microlenses are respectively located above the second light holes, and the optical axes respectively pass through the second light holes and the first light holes, wherein a pitch X of the microlenses is represented by the following formula:

X＝A1+(H/h)*(A2-A1)±20μm

10. The optical sensor of claim 1, wherein the plurality of sensor pixels are laterally sized to receive the plurality of parallel normal incident light but not the plurality of parallel oblique incident light, and the optical sensor does not have any light blocking layer between the first transparent dielectric layer and the plurality of sensor pixels to block the plurality of parallel oblique incident light.

11. The optical sensor of claim 1, wherein the optical sensor further comprises:

and an optical filter layer, performing a light wavelength filtering operation on the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, wherein the first transparent medium layer is disposed on the optical filter layer, and the plurality of microlenses are disposed on the first transparent medium layer, wherein the plurality of sensor pixels are laterally sized to receive the plurality of parallel forward incident lights but not the plurality of parallel oblique incident lights, and the optical sensor does not have any light shielding layer between the first transparent medium layer and the plurality of sensor pixels to shield the plurality of parallel oblique incident lights.

12. The optical sensor of claim 1, wherein the optical sensor further comprises:

a plurality of offset microlenses arranged in an array and located on or over the first transparent dielectric layer, wherein:

the plurality of microlenses respectively enable the plurality of parallel normal incidence lights to be incident inside a part of the total number of the plurality of sensing pixels and enable the plurality of parallel oblique incidence lights to be incident outside the part of the total number of the plurality of sensing pixels;

the plurality of offset micro-lenses respectively make a plurality of parallel second normal incident lights entering the plurality of offset micro-lenses from the outside incident outside the rest of the total number of the plurality of sensing pixels through the first transparent medium layer, and make a plurality of parallel fourth oblique incident lights entering the plurality of offset micro-lenses from the outside incident inside the rest of the total number of the plurality of sensing pixels, the target generates the plurality of parallel second normal incident lights and the plurality of parallel fourth oblique incident lights, the plurality of parallel second normal incident lights are parallel to a plurality of optical axes of the plurality of offset micro-lenses, and each fourth oblique incident light and each optical axis form a second angle.

13. The optical sensor of claim 9, wherein the optical sensor further comprises:

14. The optical sensor of claim 12, wherein the plurality of offset microlenses are arranged at a periphery of the plurality of microlenses.

15. The optical sensor of claim 13, wherein the plurality of offset microlenses are arranged at a periphery of the plurality of microlenses.

16. The optical sensor of claim 12, wherein the second angle is between 0 degrees and 60 degrees.

17. The optical sensor of claim 13, wherein the second angle is between 0 degrees and 60 degrees.

18. The optical sensor of any one of claims 1-11 and 14-17, wherein the plurality of sensing pixels are configured such that an area of the optical sensing region is smaller than an area of the target contact region.

19. The optical sensor of claim 12, wherein the plurality of sensing pixels are configured such that an area of the optical sensing region is less than an area of the target contact region.

20. The optical sensor of claim 13, wherein the plurality of sensing pixels are configured such that an area of the optical sensing region is less than an area of the target contact region.

21. The optical sensor of any one of claims 1-2, 12-17 and 19, wherein the optical sensor further comprises:

a second light-shielding layer disposed above the first light-shielding layer and having a plurality of second light holes, wherein the microlenses are respectively disposed above the second light holes,

the center line of at least one first light hole, the center line of the corresponding second light hole and the center line of the corresponding micro lens are not overlapped.

22. The optical sensor of any one of claims 1-11, 14-17, and 19-20, further comprising:

and the dielectric layer group is positioned on the substrate and covers the plurality of sensing pixels.

23. The optical sensor of any one of claims 3, 4, 6, 8 and 9, further comprising:

and the dielectric layer group is positioned on the substrate and covers the plurality of sensing pixels, and the first shading layer is positioned on the dielectric layer group.

24. An optical sensor, comprising:

a substrate having a plurality of sensing pixels arranged in an array;

the first transparent medium layer is positioned above the substrate; and

the plurality of offset micro-lenses respectively make a plurality of parallel forward incident lights entering the plurality of offset micro-lenses from the outside incident on the outside of a part or all of the total number of the plurality of sensing pixels through the first transparent medium layer, and make a plurality of parallel oblique incident lights entering the plurality of offset micro-lenses from the outside incident on the inside of a part or all of the total number of the plurality of sensing pixels, thereby sensing an image of an object, the object generating the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, the plurality of parallel forward incident lights being parallel to a plurality of optical axes of the plurality of offset micro-lenses, each of the parallel oblique incident lights forming an angle with each of the optical axes.

25. The optical sensor of claim 24, wherein the optical sensor further comprises:

a first light shielding layer having a plurality of first light holes, through which the parallel forward incident light does not pass and through which the parallel oblique incident light passes; and

and the optical filtering layer is positioned on the first shading layer and performs light wavelength filtering action on the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights, wherein the first transparent medium layer is positioned on the optical filtering layer, and the plurality of offset micro-lenses are positioned on the first transparent medium layer.

26. The optical sensor of claim 24, wherein the optical sensor further comprises:

and the lens shading layer is positioned on the first transparent medium layer and in the gaps among the plurality of offset micro-lenses so as to shade a plurality of parallel second oblique incident lights entering the gaps from the outside and prevent the second oblique incident lights from entering the first transparent medium layer and the plurality of sensing pixels.

27. The optical sensor of claim 24, wherein the optical sensor further comprises:

an optical filter layer located on the first light-shielding layer and performing a light wavelength filtering operation on the parallel forward incident lights and the parallel oblique incident lights, wherein the first transparent medium layer is located on the optical filter layer, and the plurality of offset microlenses are located on the first transparent medium layer; and

28. The optical sensor of claim 24, wherein the optical sensor further comprises:

the second shading layer is positioned on the first transparent medium layer and is provided with a plurality of second light holes; and

the second transparent dielectric layer is positioned on the second shading layer, the plurality of offset micro lenses are positioned on the second transparent dielectric layer, one of the plurality of offset micro lenses is defined as a target micro lens, the optical axis of the target micro lens is defined as a target optical axis, the sensing pixel through which the target optical axis passes is defined as a target sensing pixel, the plurality of offset micro lenses adjacent to the target micro lens are defined as adjacent micro lenses, and the second shading layer shades a plurality of parallel third oblique incident lights entering the adjacent micro lenses from the outside from entering the first transparent dielectric layer and the target sensing pixel.

29. The optical sensor of claim 24, wherein the optical sensor further comprises:

a first light shielding layer having a plurality of first light holes, through which the parallel forward incident light does not pass and through which the parallel oblique incident light passes;

30. The optical sensor of any one of claims 24-29, wherein the plurality of sensing pixels are configured such that an area of the optical sensing region is smaller than an area of the target contact region.

31. The optical sensor of claim 24, wherein the optical sensor further comprises:

32. The optical sensor of claim 31, wherein the plurality of sensing pixels are configured such that an area of the optical sensing region is less than an area of the target contact region.

33. The optical sensor of any one of claims 24-29 and 31-32, further comprising:

34. The optical sensor of any one of claims 25, 27 and 29, further comprising:

35. An optical sensor, comprising:

a substrate including a sensing pixel array;

a first light shielding layer located above the sensing pixel array and having a plurality of first openings, wherein the first openings expose a plurality of sensing pixels of the sensing pixel array;

a microlens layer located above the first light-shielding layer and including a plurality of microlenses; and

a first transparent dielectric layer located above the sensing pixel array and between the microlens layer and the sensing pixel array, wherein the first transparent dielectric layer has a first thickness;

the micro-lens layer is used for guiding an incident light to penetrate through the first transparent medium layer to the sensing pixels below the first openings.

36. The optical sensor of claim 35, further comprising:

a protection layer, which is adapted to cover the micro lens layer.

37. The optical sensor of claim 35, wherein a center line of at least one microlens is offset from a center line of the corresponding at least one first opening.

38. The optical sensor of claim 37, wherein the offset distance, the radius of curvature of the microlenses, the first thickness, and the apertures of the first openings are configured to allow the sensing pixels to receive light at an oblique angle.

39. The optical sensor of claim 35, wherein a centerline of at least one microlens overlaps a centerline of a corresponding at least one first aperture.

40. The optical sensor of claim 35, wherein the first openings and the sensing pixels correspond to each other in one-to-one, one-to-many, or many-to-one.

41. The optical sensor of claim 35, wherein the microlenses and the sensing pixels correspond to each other in one-to-one, one-to-many, or many-to-one.

42. The optical sensor as claimed in claim 35, wherein the first light shielding layer has a thickness in a range of 0.3 μm to 5 μm, and the first openings have an aperture in a range of 0.3 μm to 50 μm.

43. The optical sensor of claim 35, wherein the first thickness of the first transparent dielectric layer is in a range of 1 micron to 50 microns.

44. The optical sensor of claim 35, further comprising:

and the second transparent medium layer is positioned between the first shading layer and the micro-lens layer.

45. The optical sensor of claim 35, further comprising:

and the filter layer is positioned between the first transparent medium layer and the micro-lens layer.

46. The optical sensor of claim 35, further comprising:

and the second shading layer is positioned on the first transparent medium layer and is provided with a plurality of second openings.

47. The optical sensor of claim 46, wherein the second light shielding layer has a thickness in a range of 0.3 microns to 5 microns, and the second openings have an aperture in a range of 0.3 microns to 50 microns.

48. The optical sensor of claim 35, further comprising:

the second transparent medium layer is positioned between the first transparent medium layer and the micro-lens layer; and

and the third shading layer is positioned between the first transparent medium layer and the second transparent medium layer.

49. The optical sensor according to any one of claims 35-48,

the sensing pixel array is configured such that the area of the optical sensing region is smaller than the area of the target contact region.

50. The optical sensor of claim 46,

the center line of at least one first opening, the center line of the corresponding second opening and the center line of the corresponding micro lens are not overlapped.

51. The optical sensor of claim 50,

52. An optical sensor, comprising:

a substrate comprising a sensor pixel array, wherein the sensor pixel array comprises a plurality of sensor pixels, and each sensor pixel has a pixel size;

the first transparent medium layer is positioned above the sensing pixel array; and

a micro-lens layer disposed above the first transparent medium layer and including multiple micro-lenses each having a diameter, wherein the micro-lenses are used for guiding an incident light to pass through the first transparent medium layer to the sensing pixels,

wherein the pixel size is in the range of 3 microns to 10 microns and the diameter is in the range of 10 microns to 50 microns.

53. The optical sensor of claim 52, wherein the first transparent dielectric layer has a refractive index n, the first transparent dielectric layer has a thickness T, the microlenses have a focal length f and a diameter D, and the incident light has an incident angle θ_iAnd a refraction angle theta_r；

Wherein the pixel size P, the refractive index n, the thickness T, the focal length f, the diameter D, and the incident angle θ_iAnd the angle of refraction theta_rThe following relationships are satisfied:

sinθ_i＝n*sinθ_r，

f＝((D/2)²+T²)^1/2，

P/2＝f*tanθ_r。

54. the optical sensor of claim 52, wherein the substrate further comprises a circuit structure disposed between adjacent ones of the sensing pixels.

55. The optical sensor of claim 53, wherein a centerline of at least one microlens is offset from a centerline of a corresponding sensing pixel.

56. The optical sensor of claim 55, wherein the offset distance, the pixel size, the index of refraction, the thickness, the focal length, and the diameter are configured such that the sensing pixels receive light at an oblique angle.

57. The optical sensor of claim 52, wherein a centerline of at least one microlens overlaps a centerline of a corresponding sensing pixel.

58. The optical sensor of claim 52, wherein the microlenses and the sensing pixels correspond one-to-one, one-to-many, or many-to-one with respect to each other.

59. The optical sensor of claim 52, wherein the first thickness of the first transparent dielectric layer is in a range of 1 micron to 50 microns.

60. The optical sensor of claim 52, wherein the ratio of the pixel size to the diameter is in the range of 0.06 to 1.

61. The optical sensor of claim 52, wherein the microlens layer on the first transparent dielectric layer further has a plurality of microlenses with a second focal length to direct another incident light to pass through the first transparent dielectric layer to the sensing pixels.

62. The optical sensor of claim 52, further comprising:

and a second light shielding layer located on the first transparent dielectric layer and having a plurality of second openings, wherein the microlenses are correspondingly disposed in the second openings.

63. The optical sensor of any one of claims 52-62,

64. The optical sensor of claim 62,

the optical sensor also comprises a first shading layer which is positioned above the sensing pixel array and is provided with a plurality of first openings, wherein the first openings expose a plurality of sensing pixels of the sensing pixel array;

65. The optical sensor of claim 64,