CN210200734U - Integrated multiband filtering sensor with focusing function - Google Patents
Integrated multiband filtering sensor with focusing function Download PDFInfo
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- CN210200734U CN210200734U CN201921515850.XU CN201921515850U CN210200734U CN 210200734 U CN210200734 U CN 210200734U CN 201921515850 U CN201921515850 U CN 201921515850U CN 210200734 U CN210200734 U CN 210200734U
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Abstract
The utility model discloses an integrated multiband filtering sensor with focusing function, which comprises a substrate circuit layer, wherein the substrate circuit layer is provided with a photosensitive device layer, and the substrate circuit layer is electrically connected with the photosensitive device layer; a light filtering structure layer is arranged on the photosensitive device layer, a focusing structure layer is arranged on the light filtering structure layer, and the focusing structure layer is used for focusing light rays on the photosensitive device layer and can generate a phase shift of 0-2 pi in a visible light range; the light filtering structure layer is composed of a nano disc array, the height of the nano disc array is 50-200nm, the period is 100-400nm, and the aspect ratio of the nano disc array is 1:10-1: 1. The utility model discloses utilize amorphous silicon nanodisk structure to realize the light filtering of multiple wavelength, amorphous silicon can form on different substrates, has fine technology compatibility. The focusing structure layer, the filtering structure layer and the photosensitive device layer are integrated on the CMOS wafer, so that the miniaturization and the portability of the multiband filtering imaging device can be realized.
Description
Technical Field
The utility model relates to an image sensing technical field specifically is integration has multiband optical filter sensor of focus function.
Background
The traditional multiband filtering imaging system comprises a large and complex optical component for continuously relieving aberration and a plurality of image sensors for detecting different incident wavelengths, so that multiband filtering imaging can be completed, and the traditional multiband filtering imaging system is complex, bulky and inconvenient to use. Therefore, how to realize miniaturization and portability of the multiband filtering imaging system still remains a problem which needs to be solved urgently.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: in order to overcome the defects existing in the prior art, the utility model provides an integration has multiband filtering sensor of focusing function.
The technical scheme is as follows: in order to solve the technical problem, the utility model discloses an integrated multiband optical filtering sensor with focusing function, which comprises a substrate circuit layer, wherein a photosensitive device layer is arranged on the substrate circuit layer, and the substrate circuit layer is electrically connected with the photosensitive device layer; a light filtering structure layer is arranged on the photosensitive device layer, a focusing structure layer is arranged on the light filtering structure layer, and the focusing structure layer is used for focusing light rays on the photosensitive device layer and can generate a phase shift of 0-2 pi in a visible light range; the light filtering structure layer is composed of a nano disc array, the height of the nano disc array is 50-200nm, the period is 100-400nm, and the aspect ratio of the nano disc array is 1:10-1: 1.
The nano-disk array in the filtering structure layer comprises a plurality of sub-arrays, each sub-array comprises a plurality of nano-disks, the nano-disks in the same sub-array have the same diameter and period, the nano-disks in different sub-arrays have different diameters and periods, and each sub-array corresponds to one photosensitive device in the photosensitive device layer.
Wherein the diameter of the nanodisk is 50-200 nm.
The nano disc array comprises at least four sub arrays corresponding to at least four different filtering wavelengths.
The focusing structure layer comprises a plurality of nano columns, the nano columns are arranged into a plurality of concentric rings, the diameters of the nano columns in the same ring are the same, and the nano diameters between different rings are gradually increased from outside to inside.
Wherein, the nano-column is a silicon nitride nano-column, a gold nano-column or a gallium arsenide nano-column.
Wherein each nano-pillar is cylindrical or elliptic cylindrical.
Wherein, the thickness of the focusing structure layer is equal to the wavelength, and the period is equal to 0.7 times of the wavelength.
And a flat layer is arranged between the light filtering structure layer and the focusing structure layer.
Has the advantages that: the utility model discloses following beneficial effect has:
1. the amorphous silicon nano disc structure is utilized to realize the filtering of various wavelengths, and the amorphous silicon can be formed on different substrates, so that the amorphous silicon nano disc has good process compatibility.
2. The silicon nitride nano-column is used for realizing the focusing function of incident light, so that an optical lens with a complex structure can be replaced, and the focusing in a visible light range can be realized (no aberration is generated).
3. The focusing structure layer, the filtering structure layer and the photosensitive device layer are integrated on the CMOS wafer, so that the miniaturization and the portability of the multiband filtering imaging device can be realized.
4. The preparation process is compatible with the existing CMOS process, can be directly carried out on the existing CMOS image sensing wafer, has low production cost and is suitable for batch production.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural diagram of a light filtering structure layer;
fig. 3 is a schematic structural diagram of a focusing structure layer.
Detailed Description
The present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1-3, the multiband optical filtering sensor integrated with focusing function of the present invention includes a substrate circuit layer 1, a photosensitive device layer 2 is disposed on the substrate circuit layer 1, and the substrate circuit layer 1 is electrically connected to the photosensitive device layer 2; a light filtering structure layer 3 is arranged on the photosensitive device layer 2, a focusing structure layer 5 is arranged on the light filtering structure layer 3, and the focusing structure layer 5 is used for focusing light rays on the photosensitive device layer 2 and can generate a phase shift of 0 to 2 pi in a visible light range; the light filtering structure layer 3 is composed of a nano-disc array, the height of the nano-disc array is 50-200nm, the period is 100-400nm, and the aspect ratio of the nano-disc array is 1:10-1: 1. The nanodisk array comprises at least four subarrays 31, each subarray 31 comprises a plurality of nanodisks, the nanodisks in the same subarray 31 have the same diameter and period, the nanodisks in different subarrays 31 have different diameters and periods, each subarray 31 corresponds to one photosensitive device of the photosensitive device layer 2, and the diameter of the nanodisk is 50-200 nm. A planarization layer 4 is arranged between the filter structure layer 3 and the focus structure layer 5.
As shown in fig. 1 and 3, the focusing structure layer 5 includes a plurality of cylindrical or elliptic cylindrical nano-pillars 51, the plurality of nano-pillars 51 are arranged in a plurality of concentric rings, the diameters of the nano-pillars 51 in the same ring are the same, the diameters of the nano-pillars 51 between different rings are gradually increased from outside to inside, the thickness of the focusing structure layer 5 is equal to the wavelength, and the period is equal to 0.7 times the wavelength. The nano-pillars 51 are silicon nitride nano-pillars, gold nano-pillars or gallium arsenide nano-pillars.
Specifically, the base circuit layer 1 of the present invention is made of a semiconductor material, and may be silicon or other semiconductor compound. The utility model provides a photosensitive device layer 2, light filtering structure layer 3 and focusing structure layer 5 are all integrated together through semiconductor technology such as thin film deposition, photoetching, sculpture on basement circuit layer 1, can be compatible current image sensor CMOS technology, have realized simultaneously that focus, light filtering, survey as an organic whole, are the core that realizes miniaturized formation of image.
The photosensitive device layer 2 is essentially a photodiode, and takes advantage of the photoelectric effect of semiconductor materials, which absorb optical signals and convert them into electrical signals. Meanwhile, the photosensitive device layer 2 is composed of a pixel array, and each photosensitive device represents a pixel point.
The light filtering structure layer 3 is arranged above the photosensitive device layer 2 and is composed of a nano disc array, and the heights of the nano discs are consistent and are between 50nm and 200 nm; the nanodisk array comprises a plurality of subarrays 31, each subarray 31 comprising a plurality of nanodisks, the nanodisks within the same subarray 31 having the same diameter and period, the nanodisks within different subarrays having different diameters and periods. As shown in fig. 2, as a specific implementation, at this time, one nanodisk array includes nine subarrays 31, diameters and periods of nanodisks among different subarrays are different, and different diameters and periods are set, so that light transmission of nine different wavelengths can be selected. The height of the nano-disc in the utility model is between 50-200nm, the period is between 100-400nm, and the aspect ratio of the nano-disc is between 1:10-1: 1. The light filtering structure layer 2 is an amorphous silicon nanodisk, preferably hydrogenated amorphous silicon, which has fewer internal defects compared with amorphous silicon, and can reduce photon absorption and improve light transmittance. The amorphous silicon film can grow on different substrates at low temperature, can form a required structure through one-time photoetching, has simple process and is compatible with a CMOS (complementary metal oxide semiconductor) process. Amorphous silicon nanodisk has the high absorption in the visible light region, the characteristics that the transmissivity is low, and the utility model provides an amorphous silicon nanodisk essence is an ultra-thin dielectric medium hypersurface, nanodisk structure scattering sectional area is big, when the cycle is less than the wavelength of required transmission, utilize the nanodisk structure of array type can produce electric dipole and the magnetic dipole resonance that arouses by the mie scattering, the scattering section through array type nanodisk structure induces resonance enhancement, can strengthen the incident light transmission of specific wavelength, and the incident light of nonspecific wavelength wave band can't transmit, can control resonance condition through changing nanodisk cycle and diameter, change the incident light center wavelength that can strengthen the transmission, thereby realize the filtering characteristic. In another embodiment of the present application, the light filtering structure layer may also be an aluminum nanodisk or a silver nanodisk, wherein the aluminum nanodisk is not easily oxidized and can filter light in the visible light range; the silver nanodisk has good wavelength selectivity and good color saturation.
The flat layer 4 is used for filling gaps among the nano disks of the light filtering structure layer 3, and is also used as a refractive index matching layer, so that a uniform optical environment can be established for the nano disks, and the flat layer 4 also provides a relatively flat surface for a subsequent structure, thereby being beneficial to the deposition of a thin film in a subsequent process. The utility model discloses in utilize the silica film to fill, grind again behind the silica film that the deposit is higher than nanometer dish thickness and realize the planarization, for polymer film, silica has higher transmissivity in the visible light scope, simultaneously all has good cohesiveness with amorphous silicon and base circuit layer material.
Focusing structure layer 5 is transparent low refracting index material, requires to have great transmissivity to the wavelength in the visible light scope, can be transparent conductive oxide, organic polymer, silicon nitride etc, the utility model discloses well focusing structure layer is including having a plurality of nano-columns 51 of periodic arrangement, and the nano-column cycle is the same in the same ring. Through the diameter that changes nanometer post 51 in the different rings, nanometer post 51 can produce 0 to 2 pi's phase shift to incident light wave in the visible light scope, obtains required arbitrary phase profile, keeps big transmission amplitude simultaneously, according to the required phase shift of different positions in the lens face and designs corresponding nanometer post diameter to can realize invariable focus at visible light 400nm-700nm within range specific wave band, the utility model discloses in use the high-quality realization of surface lens structure of nanometer post 51 preparation to reach 90% transmission efficiency and 40% focusing efficiency, numerical aperture reaches 0.75. The utility model discloses well nano-column 51's shape is cylindrical or elliptic cylinder shape, and the cycle p, diameter d and the thickness t of nano-column all influence the focusing effect. The period and the thickness can influence the thickness with different transmission amplitudes and different resonances can appear in the period, wide resonance generated by resonance can cause the transmission amplitude with strong variation, when t is 1.2 lambda and p is 0.4 lambda, the transmission amplitude is designed wavelength, the phase delay and the transmission amplitude are continuous for all simulated column diameters, the transmission amplitude has only small variation, but the aspect ratio is large at the moment, and the manufacturing is not suitable; ensure appropriate manufacturing aspect ratio, keep whole phase range's approximate transmission amplitude simultaneously, the utility model discloses preferred parameter t is lambda and p is 0.7 lambda, the utility model discloses well design wavelength is 633nm, can realize the phase profile that needs through changing the nanometer post diameter, for realizing 0 to 2 pi's phase shift, as a concrete implementation mode, the utility model discloses in correspond six different nanometer post diameters, be 192nm,242nm, 292nm, 342nm, 392nm, 442nm respectively. In another embodiment of the present application, the focusing structure layer is a gold nanorod or a gallium arsenide nanorod, wherein the gold nanorod utilizes metal plasmon resonance, thereby having higher transmission efficiency. The utility model discloses a 5 simple structure of focus structure layer can replace the complicated optical device of tradition, has avoided traditional optical device to need utilize the aberration that complicated lens group could eliminate, realizes the focus at all wavelengths in the visible spectrum range.
The conventional optical element mainly relies on refraction to control light propagation, and the refraction relies on the precise curvature of the surface to a great extent to realize gradual phase accumulation, and the utility model discloses well nano-rod 51 is a planar lens, and it does not rely on light propagation to accumulate the phase gradually, but produces discrete sudden change on the phase place of incident light to replace current complicated optical component through flat and compact mode. The planar lens can also be formed by adopting high-refractive-index materials such as metal, amorphous silicon or titanium oxide, but the metal material has obvious loss at the optical frequency, the titanium oxide is not compatible with a CMOS (complementary metal oxide semiconductor) process, while the amorphous silicon absorbs light of visible light and near infrared spectrum, and meanwhile, the high-refractive-index materials have local resonance generation and phase discontinuity caused by spatial position, so that the phenomenon of chromatic aberration occurs, the chromatic aberration is expressed as the blurring related to the wavelength in an image, and the imaging based on the surface needs complex surface structure design and can only image in a narrow wavelength range. The nano-pillars 51 have CMOS compatibility and low visible light absorption, and each of the nano-pillar top and bottom interfaces has low reflectivity, so that resonance of incident light can be reduced; meanwhile, the diameter of the nano-column is changed, so that continuous phase change can be realized, and focusing can be realized in a visible light range.
The utility model discloses the following step preparation of accessible:
s1: preparing a semi-finished wafer of a CMOS sensing chip, wherein the semi-finished wafer comprises a substrate circuit layer 1 and a photosensitive device layer 2;
s2: depositing a hydrogenated amorphous silicon film on the wafer;
s3: carrying out primary photoetching and etching processes on the hydrogenated amorphous silicon film to form an amorphous silicon nano disc array of the light filtering structure layer 3;
s4: depositing a silicon dioxide film and grinding to form a flat layer;
s5: depositing a focusing structure layer film on the flat layer;
s6: and carrying out photoetching and etching processes on the focusing structure layer once to form the nano-pillar 51 array of the focusing structure layer 5.
Claims (9)
1. A multiband filtering sensor integrated with focusing function is characterized in that: the circuit comprises a substrate circuit layer (1), wherein a photosensitive device layer (2) is arranged on the substrate circuit layer (1), and the substrate circuit layer (1) is electrically connected with the photosensitive device layer (2); a light filtering structure layer (3) is arranged on the photosensitive device layer (2), a focusing structure layer (5) is arranged on the light filtering structure layer (3), and the focusing structure layer (5) is used for focusing light rays on the photosensitive device layer (2) and can generate a phase shift of 0-2 pi in a visible light range; the light filtering structure layer (3) is composed of a nano-disc array, the height of the nano-disc array is 50-200nm, the period is 100-400nm, and the aspect ratio of the nano-disc array is 1:10-1: 1.
2. The integrated focusing multi-band filter sensor according to claim 1, wherein: the nano-disk array in the light filtering structure layer (3) comprises a plurality of sub-arrays (31), each sub-array (31) comprises a plurality of nano-disks, the nano-disks in the same sub-array (31) have the same diameter and period, the nano-disks in different sub-arrays (31) have different diameters and periods, and each sub-array (31) corresponds to one photosensitive device of the photosensitive device layer (2).
3. The integrated focusing multi-band filter sensor according to claim 2, wherein: the diameter of the nanodisk is 50-200 nm.
4. The integrated focusing multi-band filter sensor according to claim 2, wherein: the array of nanodiscs comprises at least four sub-arrays (31) corresponding to at least four different filtering wavelengths.
5. The integrated focusing multi-band filter sensor according to claim 1, wherein: the focusing structure layer (5) comprises a plurality of nano columns (51), the nano columns (51) are arranged into a plurality of concentric rings, the diameters of the nano columns (51) in the same ring are the same, and the diameters of the nano columns (51) between different rings are gradually increased from outside to inside.
6. The integrated focusing multi-band filter sensor according to claim 5, wherein: the nano-column is a silicon nitride nano-column, a gold nano-column or a gallium arsenide nano-column.
7. The integrated focusing multi-band filter sensor according to claim 6, wherein: each nano-pillar (51) is cylindrical or elliptic cylindrical.
8. The integrated focusing multi-band filter sensor according to claim 1, wherein: the thickness of the focusing structure layer (5) is equal to the wavelength, and the period is equal to 0.7 times of the wavelength.
9. The integrated focusing multi-band filter sensor according to claim 1, wherein: and a flat layer (4) is arranged between the light filtering structure layer (3) and the focusing structure layer (5).
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| CN201921515850.XU CN210200734U (en) | 2019-09-12 | 2019-09-12 | Integrated multiband filtering sensor with focusing function |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491894A (en) * | 2019-09-12 | 2019-11-22 | 江苏集萃智能传感技术研究所有限公司 | The integrated multiband light filtering sensor and preparation method thereof for having focusing function |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491894A (en) * | 2019-09-12 | 2019-11-22 | 江苏集萃智能传感技术研究所有限公司 | The integrated multiband light filtering sensor and preparation method thereof for having focusing function |
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