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CN210053572U - A loudspeaker with package structure - Google Patents

A loudspeaker with package structure Download PDF

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CN210053572U
CN210053572U CN201920787738.5U CN201920787738U CN210053572U CN 210053572 U CN210053572 U CN 210053572U CN 201920787738 U CN201920787738 U CN 201920787738U CN 210053572 U CN210053572 U CN 210053572U
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loudspeaker
substrate
package structure
mems
speaker
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刘端
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Anhui Afei Acoustic Technology Co Ltd
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Anhui Afei Acoustic Technology Co Ltd
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Abstract

本申请公开了一种具有封装结构的扬声器,所述具有封装结构的扬声器,在衬底上同时形成有MEMS扬声器和发射电路,并且通过位于衬底表面的互联线路实现了MEMS扬声器和发射电路的电连接,避免了现有技术中采用引线连接MEMS扬声器和发射电路导致的体积难以进一步缩小的问题,以及过多引线造成的杂散电容对MEMS扬声器和发射电路的正常工作造成不良影响的问题。

Figure 201920787738

The present application discloses a loudspeaker with a package structure. The loudspeaker with a package structure has a MEMS loudspeaker and a transmitting circuit formed on a substrate at the same time, and realizes the connection between the MEMS loudspeaker and the transmitting circuit through interconnecting lines located on the surface of the substrate. The electrical connection avoids the problem that the volume of the MEMS speaker and the transmitting circuit is difficult to be further reduced due to the use of lead wires in the prior art, and the problem that the stray capacitance caused by too many leads adversely affects the normal operation of the MEMS speaker and the transmitting circuit.

Figure 201920787738

Description

一种具有封装结构的扬声器A loudspeaker with package structure

技术领域technical field

本申请涉及声学设备技术领域,更具体地说,涉及一种具有封装结构的扬声器。The present application relates to the technical field of acoustic equipment, and more particularly, to a loudspeaker with a package structure.

背景技术Background technique

声音是由物体振动产生的,我们把正在发生的物体叫做声源。物体振动产生的压力波通过空气运动,进而振动内耳的听小骨,这些振动被听小骨转化为微小的电子脑波,从而使得人能够察觉到声音。Sound is produced by the vibration of an object, and we call the object that is taking place a sound source. The pressure wave generated by the vibration of the object moves through the air, and then vibrates the auditory ossicles of the inner ear. These vibrations are converted into tiny electronic brain waves by the auditory ossicles, so that people can perceive sound.

扬声器,又称喇叭,是一种常见的电声换能器件,其作用是将电信号转换为声信号,并通过振动的形式将声信号向外界传输,以实现声音的传递。Loudspeaker, also known as horn, is a common electro-acoustic transducer. Its function is to convert electrical signals into sound signals, and transmit the sound signals to the outside world in the form of vibration to achieve sound transmission.

MEMS(微机电系统,Micro-Electro-Mechanical System)扬声器,具有功耗低、尺寸小、体积小和一致性好等优点,是扬声器领域的发展方向。如何进一步的缩小MEMS扬声器的体积,以使MEMS扬声器进一步适应下游产品的小型化需求,成为研究人员的研究方向之一。MEMS (Micro-Electro-Mechanical System) speakers have the advantages of low power consumption, small size, small size and good consistency, and are the development direction of the speaker field. How to further reduce the volume of MEMS speakers so that MEMS speakers can further adapt to the miniaturization needs of downstream products has become one of the research directions of researchers.

实用新型内容Utility model content

为解决上述技术问题,本申请提供一种具有封装结构的扬声器,以实现进一步降低MEMS扬声器的体积的目的。In order to solve the above technical problems, the present application provides a loudspeaker with a package structure, so as to further reduce the volume of the MEMS loudspeaker.

为实现上述目的,本申请提供如下技术方案:To achieve the above purpose, the application provides the following technical solutions:

一种具有封装结构的扬声器,包括:A loudspeaker with a package structure, comprising:

衬底,所述衬底包括第一表面;a substrate including a first surface;

位于所述第一表面一侧的发射电路、MEMS扬声器和互联线路;所述发射电路和所述MEMS扬声器均与所述互联线路电连接。A transmitting circuit, a MEMS speaker and an interconnection line located on one side of the first surface; both the transmitting circuit and the MEMS speaker are electrically connected to the interconnection line.

可选的,所述发射电路通过多个第一焊盘与所述互联线路电连接;Optionally, the transmitting circuit is electrically connected to the interconnecting circuit through a plurality of first pads;

所述MEMS扬声器通过多个第二焊盘与所述互联线路电连接。The MEMS speaker is electrically connected to the interconnection line through a plurality of second pads.

可选的,还包括:Optionally, also include:

贯穿所述衬底的声孔,以及部分贯穿所述MEMS扬声器的空腔;an acoustic hole through the substrate, and a cavity partially through the MEMS speaker;

所述空腔的开口直径大于所述声孔的开口直径,且所述空腔位于所述声孔的上方。The opening diameter of the cavity is larger than the opening diameter of the acoustic hole, and the cavity is located above the acoustic hole.

可选的,所述声孔的横截面形状为圆形。Optionally, the cross-sectional shape of the acoustic hole is circular.

可选的,所述声孔的横截面的直径的取值范围为10-5000μm;Optionally, the diameter of the cross section of the acoustic hole ranges from 10 to 5000 μm;

所述声孔的高度的取值范围为100-1000μm。The value range of the height of the acoustic hole is 100-1000 μm.

可选的,所述MEMS扬声器包括压电式MEMS扬声器。Optionally, the MEMS speaker includes a piezoelectric MEMS speaker.

可选的,所述压电式MEMS扬声器包括:Optionally, the piezoelectric MEMS speaker includes:

基底,所述空腔贯穿所述基底的上下表面;a base, the cavity penetrates the upper and lower surfaces of the base;

位于所述基底上表面一侧的单个或多个叠层的压电单元;single or multiple stacked piezoelectric cells on one side of the upper surface of the substrate;

位于所述基底下表面的掩膜层。a mask layer on the lower surface of the substrate.

可选的,所述压电式MEMS扬声器还包括:Optionally, the piezoelectric MEMS speaker further includes:

位于所述基底上表面一侧的振动介质膜层;a vibrating dielectric film layer on one side of the upper surface of the substrate;

所述单个或多个叠层的压电单元位于所述振动介质膜层背离所述基底一侧。The single or multiple stacked piezoelectric units are located on the side of the vibrating dielectric film layer facing away from the substrate.

可选的,所述振动介质膜层包括:Optionally, the vibration medium film layer includes:

由氧化硅层、氮化硅层、硅层、高分子防水材料等组成的单层或多层振动介质膜层。It is a single-layer or multi-layer vibration dielectric film layer composed of a silicon oxide layer, a silicon nitride layer, a silicon layer, and a polymer waterproof material.

可选的,所述压电单元包括:Optionally, the piezoelectric unit includes:

位于所述基底上表面一侧的底电极;a bottom electrode on one side of the upper surface of the substrate;

位于所述底电极背离所述基底一侧的压电层;a piezoelectric layer on the side of the bottom electrode facing away from the substrate;

位于所述压电层背离所述基底一侧的顶电极。a top electrode on the side of the piezoelectric layer facing away from the substrate.

从上述技术方案可以看出,本申请提供了一种具有封装结构的扬声器,所述具有封装结构的扬声器通过衬底和衬底表面的互联线路将MEMS扬声器和发射电路封装在一起,避免了现有技术中通过引线等结构实现MEMS扬声器和发射电路的电连接而导致的体积较大的问题,并且避免了现有技术中过多的引线造成的杂散电容对发射电路和MEMS扬声器正常工作的不良影响。It can be seen from the above technical solutions that the present application provides a loudspeaker with a package structure, the loudspeaker with a package structure encapsulates the MEMS loudspeaker and the transmitting circuit together through the interconnection lines between the substrate and the surface of the substrate, avoiding the need for existing In the prior art, the electrical connection between the MEMS loudspeaker and the transmitting circuit is realized by structures such as lead wires, and the problem of large volume is caused, and the stray capacitance caused by the excessive lead wires in the prior art is avoided. adverse effects.

附图说明Description of drawings

为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only It is an embodiment of the present application. For those of ordinary skill in the art, other drawings can also be obtained according to the provided drawings without any creative effort.

图1为现有技术中的扬声器的结构示意图;1 is a schematic structural diagram of a loudspeaker in the prior art;

图2为本申请的一个实施例提供的一种具有封装结构的扬声器的结构示意图;FIG. 2 is a schematic structural diagram of a loudspeaker with a package structure provided by an embodiment of the present application;

图3为本申请的另一个实施例提供的一种具有封装结构的扬声器的结构示意图;3 is a schematic structural diagram of a loudspeaker with a package structure provided by another embodiment of the present application;

图4为本申请的又一个实施例提供的一种具有封装结构的扬声器的结构示意图;4 is a schematic structural diagram of a loudspeaker with a package structure provided by yet another embodiment of the application;

图5为本申请的再一个实施例提供的一种具有封装结构的扬声器的结构示意图;5 is a schematic structural diagram of a loudspeaker with a package structure provided by yet another embodiment of the present application;

图6为本申请的一个可选实施例提供的一种具有封装结构的扬声器的结构示意图;6 is a schematic structural diagram of a loudspeaker with a package structure provided by an optional embodiment of the present application;

图7为本申请的另一个可选实施例提供的一种具有封装结构的扬声器的结构示意图;7 is a schematic structural diagram of a loudspeaker with a package structure provided by another optional embodiment of the present application;

图8为本申请的一个实施例提供的一种MEMS扬声器的结构示意图;8 is a schematic structural diagram of a MEMS speaker according to an embodiment of the present application;

图9为本申请的另一个实施例提供的一种MEMS扬声器的结构示意图;9 is a schematic structural diagram of a MEMS speaker provided by another embodiment of the present application;

图10为本申请的再一个实施例提供的一种MEMS扬声器的结构示意图。FIG. 10 is a schematic structural diagram of a MEMS speaker according to yet another embodiment of the present application.

具体实施方式Detailed ways

正如背景技术所述,参考图1,现有技术中的MEMS扬声器1通过引线2等连接结构实现与发射电路3的电连接,其中,发射电路3用于为MEMS扬声器1 提供电信号,该电信号驱动MEMS扬声器1振动,进而发出相应的声音。图1 中还示出了基板4。As described in the background art, referring to FIG. 1 , a MEMS speaker 1 in the prior art is electrically connected to a transmitting circuit 3 through a connection structure such as a lead 2 , wherein the transmitting circuit 3 is used to provide an electrical signal for the MEMS speaker 1 , and the electrical The signal drives the MEMS speaker 1 to vibrate, thereby emitting corresponding sound. The substrate 4 is also shown in FIG. 1 .

过多的引线不仅使得系统整体的结构较大,并且过多引线造成的杂散电容会对MEMS扬声器和发射电路的正常工作造成不良影响。Too many leads not only make the overall structure of the system larger, but also the stray capacitance caused by too many leads will adversely affect the normal operation of the MEMS speaker and the transmitting circuit.

有鉴于此,本申请实施例提供了一种具有封装结构的扬声器,包括:In view of this, embodiments of the present application provide a speaker with a package structure, including:

衬底,所述衬底包括第一表面;a substrate including a first surface;

位于所述第一表面一侧的发射电路、MEMS扬声器和互联线路;所述发射电路和所述MEMS扬声器均与所述互联线路电连接。A transmitting circuit, a MEMS speaker and an interconnection line located on one side of the first surface; both the transmitting circuit and the MEMS speaker are electrically connected to the interconnection line.

所述具有封装结构的扬声器,在衬底上同时形成有MEMS扬声器和发射电路,并且通过位于衬底表面的互联线路实现了MEMS扬声器和发射电路的电连接,避免了现有技术中采用引线连接MEMS扬声器和发射电路导致的体积难以进一步缩小的问题,以及过多引线造成的杂散电容对MEMS扬声器和发射电路的正常工作造成不良影响的问题。The loudspeaker with the package structure has a MEMS loudspeaker and a transmitting circuit formed on the substrate at the same time, and the electrical connection between the MEMS loudspeaker and the transmitting circuit is realized through the interconnection lines located on the surface of the substrate, avoiding the use of lead connection in the prior art. The problem that the volume of the MEMS speaker and the transmitting circuit is difficult to be further reduced, and the problem that the stray capacitance caused by too many leads has an adverse effect on the normal operation of the MEMS speaker and the transmitting circuit.

下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

本说明书所提及的“实施例”或类似用语表示与实施例有关的特性、结构或特征,包括在本申请的至少一实施例中。因此,本说明书所出现的用语“在一实施例中”、“在实施例中”以及类似用语可能但不必然都指向相同实施例。Reference in this specification to an "embodiment" or similar terms means a characteristic, structure, or characteristic associated with the embodiment, which is included in at least one embodiment of the present application. Thus, appearances of the phrases "in an embodiment," "in an embodiment," and similar phrases in this specification may, but do not necessarily, all refer to the same embodiment.

再者,本申请所述特性、结构或特征可以以任何方式结合在一个或多个实施例中。以下说明将提供许多特定的细节以提供对本申请实施例的了解。然而相关领域的普通技术人员将看出本申请,即使没有利用其中一个或多个特定细节,或利用其它方法、组件、材料等亦可实施。另一方面,为避免混淆本申请,公知的结构、材料或操作并没有详细描述。Furthermore, the features, structures or characteristics described herein may be combined in any manner in one or more embodiments. The following description will provide numerous specific details to provide an understanding of embodiments of the present application. One of ordinary skill in the relevant art will recognize, however, that the present application may be practiced without one or more of the specific details, or with other methods, components, materials, and the like. In other instances, well-known structures, materials, or operations have not been described in detail to avoid obscuring the present application.

本申请实施例提供了一种具有封装结构的扬声器,如图2所示,包括:An embodiment of the present application provides a loudspeaker with a package structure, as shown in FIG. 2 , including:

衬底40,所述衬底40包括第一表面;a substrate 40, the substrate 40 including a first surface;

位于所述第一表面一侧的发射电路20、MEMS扬声器10和互联线路30;所述发射电路20和所述MEMS扬声器10均与所述互联线路30电连接。The transmitting circuit 20 , the MEMS speaker 10 and the interconnection line 30 located on one side of the first surface; the transmitting circuit 20 and the MEMS speaker 10 are all electrically connected to the interconnection line 30 .

在图2中,还示出了MEMS扬声器10的基底11,以及MEMS扬声器的功能结构12以及发射电路20的基底22,以及发射电路20的功能结构21。In FIG. 2 , the substrate 11 of the MEMS speaker 10 is also shown, as well as the functional structure 12 of the MEMS speaker and the substrate 22 of the transmitting circuit 20 , and the functional structure 21 of the transmitting circuit 20 .

在本实施例中,所述具有封装结构的扬声器,在衬底40上同时形成有 MEMS扬声器10和发射电路20,并且通过位于衬底40表面的互联线路30实现了MEMS扬声器10和发射电路20的电连接,避免了现有技术中采用引线连接 MEMS扬声器10和发射电路20导致的体积难以进一步缩小,以及过多引线造成的杂散电容对MEMS扬声器10和发射电路20的正常工作造成不良影响的问题。In this embodiment, for the speaker with the package structure, the MEMS speaker 10 and the transmitting circuit 20 are formed on the substrate 40 at the same time, and the MEMS speaker 10 and the transmitting circuit 20 are realized through the interconnecting lines 30 located on the surface of the substrate 40 . It avoids the difficulty of further reducing the volume caused by the use of wires to connect the MEMS speaker 10 and the transmitting circuit 20 in the prior art, and the stray capacitance caused by too many wires has an adverse effect on the normal operation of the MEMS speaker 10 and the transmitting circuit 20. The problem.

在本实施例中,在一块衬底40上形成互联线路30,并通过互联线路30将发射电路20和MEMS扬声器10电连接在一起的工艺可以为SIP(系统级封装, System In a Package)封装工艺。In this embodiment, the process of forming the interconnection line 30 on a substrate 40 and electrically connecting the transmitting circuit 20 and the MEMS speaker 10 together through the interconnection line 30 may be SIP (System In a Package) packaging craft.

在图2中,MEMS扬声器10和发射电路20均为正装芯片,即MEMS扬声器 10和发射电路20的功能结构均位于远离所述衬底40一侧,这些功能结构通过贯穿其各自基底的通孔与位于衬底40表面的互联线路30电连接。In FIG. 2 , both the MEMS speaker 10 and the transmitting circuit 20 are front-mounted chips, that is, the functional structures of the MEMS speaker 10 and the transmitting circuit 20 are located on the side away from the substrate 40 , and these functional structures pass through through holes through their respective substrates. It is electrically connected to the interconnection lines 30 located on the surface of the substrate 40 .

参考图3,图3为另一种具有封装结构的扬声器,在图3中,MEMS扬声器 10和发射电路20均为倒装芯片,即MEMS扬声器10和发射电路20的功能结构均位于朝向衬底40一侧,这些功能结构直接与发射电路20电连接,进而实现彼此的电连接。Referring to FIG. 3 , FIG. 3 is another speaker with a package structure. In FIG. 3 , both the MEMS speaker 10 and the transmitting circuit 20 are flip chips, that is, the functional structures of the MEMS speaker 10 and the transmitting circuit 20 are located toward the substrate. On the side of 40, these functional structures are directly electrically connected to the transmitting circuit 20, thereby realizing electrical connection with each other.

所述互联线路30可以直接通过热蒸镀金属层和光刻工艺形成满足电连接需求的线路图案,还可以通过其他的金属层形成工艺和图案形成工艺形成所述互联线路30。本申请对此并不做限定,具体视实际情况而定。The interconnecting lines 30 can be directly formed by thermal evaporation metal layers and photolithography processes to form circuit patterns that meet electrical connection requirements, and the interconnecting lines 30 can also be formed through other metal layer forming processes and pattern forming processes. This application does not limit this, depending on the actual situation.

所述发射电路20的功能结构一般包括电压增益功能和阻抗匹配功能。The functional structure of the transmitting circuit 20 generally includes a voltage gain function and an impedance matching function.

参考图4和图5,图4和图5中还示出了位于所述衬底40背离所述MEMS扬声器10一侧的外接连接结构41,所述外接连接结构41可以为外接焊盘或外接锡球等结构。所述外接连接结构41通过贯穿所述衬底40的通孔(附图中未示出)实现与所述互联线路30的电连接,进而实现与MEMS扬声器10和发射电路20的电连接。在使用过程中,其他器件可以通过所述外接连接结构41实现与所述具有封装结构的MEMS扬声器10的连接。Referring to FIG. 4 and FIG. 5 , FIG. 4 and FIG. 5 also show an external connection structure 41 located on the side of the substrate 40 away from the MEMS speaker 10 , and the external connection structure 41 may be an external pad or an external connection Solder ball and other structures. The external connection structure 41 is electrically connected to the interconnection line 30 through a through hole (not shown in the drawings) penetrating the substrate 40 , and further electrically connected to the MEMS speaker 10 and the transmitting circuit 20 . During use, other devices can be connected to the MEMS speaker 10 with the package structure through the external connection structure 41 .

参考图6,图6中示出了当MEMS扬声器10和发射电路20均为正装芯片时,所述发射电路20通过多个第一焊盘13与所述互联线路30电连接;Referring to FIG. 6, FIG. 6 shows that when the MEMS speaker 10 and the transmitting circuit 20 are both positive chips, the transmitting circuit 20 is electrically connected to the interconnecting line 30 through a plurality of first pads 13;

所述MEMS扬声器10通过多个第二焊盘23与所述互联线路30电连接。The MEMS speaker 10 is electrically connected to the interconnection line 30 through a plurality of second pads 23 .

可选的,所述第一焊盘13和第二焊盘23还可以为锡球结构。Optionally, the first pads 13 and the second pads 23 may also be solder ball structures.

在图6所示的结构中,所述MEMS扬声器10和发射电路20的功能结构分别通过与所述第一焊盘13和第二焊盘23的电连接实现与互联线路30的电连接。In the structure shown in FIG. 6 , the functional structures of the MEMS speaker 10 and the transmitting circuit 20 are electrically connected to the interconnection line 30 through the electrical connection with the first pad 13 and the second pad 23 respectively.

在上述实施例的基础上,在本申请的另一个实施例中,参考图7,所述具有封装结构的扬声器还包括:On the basis of the above-mentioned embodiment, in another embodiment of the present application, referring to FIG. 7 , the speaker with the package structure further includes:

贯穿所述衬底的声孔14,以及部分贯穿所述MEMS扬声器的空腔11’;Acoustic holes 14 penetrating the substrate, and partially penetrating the cavity 11' of the MEMS speaker;

所述空腔11’的开口直径大于所述声孔14的开口直径,且所述空腔11’位于所述声孔14的上方。The opening diameter of the cavity 11 ′ is larger than the opening diameter of the acoustic hole 14 , and the cavity 11 ′ is located above the acoustic hole 14 .

所述声孔14的作用是调节MEMS扬声器10的频率响应特性,具体地,声孔14和MEMS扬声器10的空腔11’构成了一个赫姆霍兹谐振腔,通过调节声孔14的尺寸可以调节MEMS扬声器10的频率响应。The function of the sound hole 14 is to adjust the frequency response characteristics of the MEMS speaker 10 . Specifically, the sound hole 14 and the cavity 11 ′ of the MEMS speaker 10 constitute a Helmholtz resonant cavity, and the size of the sound hole 14 can be adjusted. The frequency response of the MEMS speaker 10 is adjusted.

可选的,所述声孔14的横截面的直径的取值范围为10-5000μm;Optionally, the diameter of the cross section of the acoustic hole 14 ranges from 10 to 5000 μm;

所述声孔14的高度的取值范围为100-1000μm。The value range of the height of the acoustic hole 14 is 100-1000 μm.

可选的,所述声孔14的横截面形状为圆形。Optionally, the cross-sectional shape of the acoustic hole 14 is circular.

可选的,所述MEMS扬声器10包括压电式MEMS扬声器。Optionally, the MEMS speaker 10 includes a piezoelectric MEMS speaker.

在上述实施例的基础上,本申请的又一个实施例给出了一种压电式 MEMS扬声器的具体结构,参考图8,所述压电式MEMS扬声器包括:On the basis of the above-mentioned embodiment, another embodiment of the present application provides a specific structure of a piezoelectric MEMS speaker. Referring to FIG. 8 , the piezoelectric MEMS speaker includes:

基底11,所述空腔11’贯穿所述基底11的上下表面;The base 11, the cavity 11' runs through the upper and lower surfaces of the base 11;

位于所述基底11上表面一侧的单个或多个叠层的压电单元12';Single or multiple stacked piezoelectric units 12' on one side of the upper surface of the substrate 11;

位于所述基底11下表面的掩膜层15。The mask layer 15 on the lower surface of the substrate 11 .

参考图9和图10,所述压电单元12'包括:9 and 10, the piezoelectric unit 12' includes:

位于所述基底11上表面一侧的底电极121;a bottom electrode 121 located on one side of the upper surface of the substrate 11;

位于所述底电极121背离所述基底11一侧的压电层122;the piezoelectric layer 122 on the side of the bottom electrode 121 facing away from the substrate 11;

位于所述压电层122背离所述基底11一侧的顶电极123。The top electrode 123 is located on the side of the piezoelectric layer 122 facing away from the substrate 11 .

参考图10,所述压电式MEMS扬声器还包括:10, the piezoelectric MEMS speaker further includes:

位于所述基底上表面一侧的振动介质膜层16;A vibrating dielectric film layer 16 on one side of the upper surface of the substrate;

所述单个或多个叠层的压电单元12'位于所述振动介质膜层背离所述基底一侧。The single or multiple stacked piezoelectric units 12' are located on the side of the vibrating dielectric film layer away from the substrate.

可选的,所述振动介质膜层16包括:Optionally, the vibration medium film layer 16 includes:

由氧化硅(SiO2)层、氮化硅(SiN)层、硅(Si)层、高分子防水材料等组成的单层或多层振动介质膜层16。The single-layer or multi-layer vibration dielectric film layer 16 is composed of a silicon oxide (SiO 2 ) layer, a silicon nitride (SiN) layer, a silicon (Si) layer, a polymer waterproof material, and the like.

相应的,本申请实施例还提供了一种通信设备,包括如上述任一实施例所述的具有封装结构的MEMS扬声器。Correspondingly, an embodiment of the present application further provides a communication device, including the MEMS speaker with a package structure as described in any of the foregoing embodiments.

综上所述,本申请实施例提供了一种具有封装结构的扬声器,所述具有封装结构的扬声器通过衬底和衬底表面的互联线路将MEMS扬声器和发射电路封装在一起,避免了现有技术中通过引线都结构实现MEMS扬声器和发射电路的电连接而导致的体积较大的问题,并且避免了现有技术中过多的引线造成的杂散电容对发射电路和MEMS扬声器正常工作的不良影响。To sum up, the embodiments of the present application provide a speaker with a package structure, the speaker with a package structure encapsulates the MEMS speaker and the transmitting circuit together through the interconnection lines between the substrate and the surface of the substrate, avoiding the need for existing In the technology, the electrical connection between the MEMS speaker and the transmitting circuit is realized through the lead structure, and the problem of large volume is caused, and the stray capacitance caused by excessive leads in the prior art is avoided. influences.

本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same and similar parts between the various embodiments can be referred to each other.

对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本申请。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本申请的精神或范围的情况下,在其它实施例中实现。因此,本申请将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, this application is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1.一种具有封装结构的扬声器,其特征在于,包括:1. A loudspeaker with a package structure is characterized in that, comprising: 衬底,所述衬底包括第一表面;a substrate including a first surface; 位于所述第一表面一侧的发射电路、MEMS扬声器和互联线路;所述发射电路和所述MEMS扬声器均与所述互联线路电连接。A transmitting circuit, a MEMS speaker and an interconnection line located on one side of the first surface; both the transmitting circuit and the MEMS speaker are electrically connected to the interconnection line. 2.根据权利要求1所述的具有封装结构的扬声器,其特征在于,所述发射电路通过多个第一焊盘与所述互联线路电连接;2. The loudspeaker with a package structure according to claim 1, wherein the transmitting circuit is electrically connected to the interconnecting circuit through a plurality of first pads; 所述MEMS扬声器通过多个第二焊盘与所述互联线路电连接。The MEMS speaker is electrically connected to the interconnection line through a plurality of second pads. 3.根据权利要求1所述的具有封装结构的扬声器,其特征在于,还包括:3. The loudspeaker with package structure according to claim 1, characterized in that, further comprising: 贯穿所述衬底的声孔,以及部分贯穿所述MEMS扬声器的空腔;an acoustic hole through the substrate, and a cavity partially through the MEMS speaker; 所述空腔的开口直径大于所述声孔的开口直径,且所述空腔位于所述声孔的上方。The opening diameter of the cavity is larger than the opening diameter of the acoustic hole, and the cavity is located above the acoustic hole. 4.根据权利要求3所述的具有封装结构的扬声器,其特征在于,所述声孔的横截面形状为圆形。4 . The loudspeaker with a package structure according to claim 3 , wherein the cross-sectional shape of the sound hole is circular. 5 . 5.根据权利要求4所述的具有封装结构的扬声器,其特征在于,所述声孔的横截面的直径的取值范围为10-5000μm;5 . The loudspeaker with a package structure according to claim 4 , wherein the diameter of the cross section of the sound hole ranges from 10 to 5000 μm; 6 . 所述声孔的高度的取值范围为100-1000μm。The value range of the height of the acoustic hole is 100-1000 μm. 6.根据权利要求3所述的具有封装结构的扬声器,其特征在于,所述MEMS扬声器包括压电式MEMS扬声器。6 . The loudspeaker with a package structure according to claim 3 , wherein the MEMS loudspeaker comprises a piezoelectric MEMS loudspeaker. 7 . 7.根据权利要求6所述的具有封装结构的扬声器,其特征在于,所述压电式MEMS扬声器包括:7. The loudspeaker with a package structure according to claim 6, wherein the piezoelectric MEMS loudspeaker comprises: 基底,所述空腔贯穿所述基底的上下表面;a base, the cavity penetrates the upper and lower surfaces of the base; 位于所述基底上表面一侧的单个或多个叠层的压电单元;single or multiple stacked piezoelectric cells on one side of the upper surface of the substrate; 位于所述基底下表面的掩膜层。a mask layer on the lower surface of the substrate. 8.根据权利要求7所述的具有封装结构的扬声器,其特征在于,所述压电式MEMS扬声器还包括:8. The speaker with a package structure according to claim 7, wherein the piezoelectric MEMS speaker further comprises: 位于所述基底上表面一侧的振动介质膜层;a vibrating dielectric film layer on one side of the upper surface of the substrate; 所述单个或多个叠层的压电单元位于所述振动介质膜层背离所述基底一侧。The single or multiple stacked piezoelectric units are located on the side of the vibrating dielectric film layer facing away from the substrate. 9.根据权利要求8所述的具有封装结构的扬声器,其特征在于,所述振动介质膜层包括:9. The loudspeaker with a package structure according to claim 8, wherein the vibration dielectric film layer comprises: 由氧化硅层、氮化硅层、硅层、高分子防水材料等组成的单层或多层振动介质膜层。It is a single-layer or multi-layer vibration dielectric film layer composed of a silicon oxide layer, a silicon nitride layer, a silicon layer, and a polymer waterproof material. 10.根据权利要求7所述的具有封装结构的扬声器,其特征在于,所述压电单元包括:10. The speaker with a package structure according to claim 7, wherein the piezoelectric unit comprises: 位于所述基底上表面一侧的底电极;a bottom electrode on one side of the upper surface of the substrate; 位于所述底电极背离所述基底一侧的压电层;a piezoelectric layer on the side of the bottom electrode facing away from the substrate; 位于所述压电层背离所述基底一侧的顶电极。a top electrode on the side of the piezoelectric layer facing away from the substrate.
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