CN210006695U - Semiconductor detection device and semiconductor process device - Google Patents

Abstract

The utility model provides a semiconductor inspection device and a semiconductor process device, wherein the inspection device comprises: a wafer carrying device for carrying a wafer to be inspected; an incident light system for emitting a first incident light; a beam shaping system for converting the first incident light An incident light is shaped into a first annular incident light, and the first annular incident light is reflected by the wafer to be inspected to form a first reflected light; an optical signal sorting system is used to sort out the first reflected light from the first reflected light. A nonlinear optical signal; a control system for acquiring first defect information of the wafer to be inspected according to the nonlinear optical signal. The utility model is used for realizing non-destructive atomic-level defect detection in the manufacturing process, and simultaneously eliminating the anisotropy of nonlinear optical signals in the detection process.

Description

Semiconductor testing device and semiconductor processing device

technical field

The utility model relates to the technical field of semiconductor manufacturing, in particular to a semiconductor testing device and a semiconductor processing device.

Background technique

In the semiconductor manufacturing process, it is easy to cause the device yield to drop due to defects in the process or materials, and to increase the production cost. The existing conventional yield inspection methods are divided into electrical inspection and online quantity inspection.

Among them, electrical inspection can be used to find defects that affect the electrical performance of the device. However, conventional electrical testing can only be applied to Back End Of Line (BEOL for short) or packaging testing, and cannot find and solve problems in real time during the manufacturing process. That is to say, the period from the occurrence of the problem to the detection of the electrical inspection is too long, which is easy to cause waste of ineffective processes, and the detection speed is slow, which cannot realize batch inspection.

Another traditional on-line inspection can realize real-time inspection in the process, such as scanning electron microscope inspection, optical bright field inspection, etc., but its inspection type has limitations. Specifically, online mass inspection is usually suitable for macroscopic physical defects, such as particles and pattern defects. Once inspection requirements enter into atomic-sized defects, online mass inspection cannot meet the inspection requirements.

To sum up, the real-time detection of atomic-level defects caused by the use of new materials and technological processes in the R&D and production of advanced processes is one of the urgent problems to be solved in the field of semiconductor yield detection.

Utility model content

The problem solved by the present invention is to provide a semiconductor inspection device and a semiconductor process device, which are used to realize non-destructive atomic-level defect detection in the manufacturing process, and simultaneously eliminate the anisotropy of nonlinear optical signals in the detection process.

In order to solve the above problems, the present invention provides a semiconductor inspection device, comprising: a wafer carrying device for carrying the wafer to be inspected; an incident light system for emitting first incident light; and a beam shaping system for transferring the first incident light Light shaping to form a first annular incident light, and the first annular incident light is reflected by the wafer to be inspected to form a first reflected light; an optical signal sorting system is used to sort out nonlinearities from the first reflected light an optical signal; a control system for acquiring first defect information of the wafer to be inspected according to the nonlinear optical signal.

Optionally, the beam shaping system includes: a first axicon for condensing the first incident light to form a first condensed light; a second axicon for diverging the first condensed light to form the first condensed light The first annular incident light.

Optionally, a focusing unit is further included, and the focusing unit includes a lens.

Optionally, the lens further includes a through hole, and the through hole penetrates the lens along a central axis of the lens.

Optionally, the nonlinear optical signal includes a second harmonic signal, a third harmonic signal, a sum frequency response signal and a difference frequency response signal.

Optionally, it also includes: a wafer alignment and focusing system, the wafer alignment and focusing system includes: an imaging unit for acquiring imaging patterns at different positions on the surface of the wafer to be detected; a sensor for acquiring the to-be-detected wafer surface imaging patterns; Position information of the wafer in a first direction, the first direction being perpendicular to the surface of the wafer to be inspected.

Optionally, the control system includes: an imaging arithmetic unit for acquiring the position information of the wafer to be inspected according to the imaging patterns of different positions on the surface of the wafer to be inspected; a first position control unit for obtaining the position information of the wafer to be inspected according to the The position information moves the wafer carrier along a direction parallel to the reference plane, so that the first annular incident light is aligned on the surface of the wafer to be inspected, and the reference plane is parallel to the surface of the wafer to be inspected.

Optionally, the control system includes: a second position control unit, configured to move the wafer carrier device according to the position information in the first direction, so as to realize the first annular incident light on the wafer to be inspected Surface focus.

Optionally, the incident light system includes: a first light source for emitting a first initial incident light; a first incident light modulation unit for modulating the first initial incident light to form a first initial modulated incident light light; a beam splitter for forming the first incident light emitted to the wafer to be inspected through the first initial modulation of the incident light.

Optionally, the first light source includes a laser transmitter.

Optionally, it further includes: an optical collimation unit: used for collimating the first reflected light, and the collimated first reflected light is incident on the optical signal sorting system.

Optionally, it further includes: an optical collimation unit: used for collimating the first reflected light, and the collimated first reflected light passes through the beam shaping system and the beam splitter and then enters the optical Signal sorting system.

Optionally, the optical signal sorting system includes: an optical filter for passing a part of the first reflected light with a preset wavelength range to form a first transition optical signal; a polarizer for passing a part of the first reflected light with a preset wavelength range; parameters of the first transition optical signal to form the nonlinear optical signal.

Optionally, the optical signal sorting system includes: a polarizer for passing part of the first reflected light with preset polarization parameters to form a second transition optical signal; range of the second transition optical signal to form the nonlinear optical signal.

Optionally, it further includes: a main signal acquisition system, configured to acquire the nonlinear optical signal, and transmit the nonlinear optical signal to the control system.

Optionally, it further includes: an additional signal acquisition system, configured to acquire additional optical signals from the first reflected light, and transmit the additional optical signals to the control system.

Optionally, the wafer carrying device includes: a carrying tray for carrying the wafer to be inspected; a fixing device disposed on the carrying tray for fixing the wafer to be inspected on the surface of the carrying tray; a mechanical moving component, It is used to drive the carrier plate to move along the surface of the wafer to be inspected in parallel.

Optionally, the wafer carrier device further includes a rotation device for driving the carrier disk to rotate along the central axis.

Optionally, the fixing device is a vacuum suction cup or a buckle fixed on the edge of the carrying disc.

Correspondingly, the present invention also provides a semiconductor process device, comprising: a process cavity with a process window; the above-mentioned semiconductor detection device, the incident light system, the beam shaping system, the optical signal The sorting system and the control system are located outside the process chamber, and the first annular incident light is vertically incident on the wafer to be inspected through the process window.

Compared with the prior art, the technical solution of the present utility model has the following advantages:

The incident light system emits the first incident light, and under the action of the optical shaping system, the first incident light is shaped into a first annular incident light, and the first annular incident light reflected from the surface of the wafer to be detected is sorted out. Nonlinear optical signals for detection. On the one hand, nonlinear optical signals can be used to characterize interface state charge potential well defects, inherent charges and defects in dielectric layers, or semiconductor crystal structure defects, and realize real-time non-destructive semiconductor device atomic-level defect detection in the semiconductor process; The difference in the azimuth angle of the wafer leads to the anisotropy of the nonlinear signal, and the azimuth angle depends on the angle between the incident surface and the lattice orientation. When the first annular incident light is used as the incident light, the azimuth angle difference becomes several The difference in azimuth is superimposed, and the difference in azimuth is eliminated. Since the difference in azimuth is eliminated, the anisotropy of the nonlinear signal is also eliminated.

Description of drawings

1 to 11 are schematic structural diagrams of a semiconductor testing device and a semiconductor processing device according to various embodiments of the present invention;

12 is a scanning trajectory diagram of the first annular incident light in the embodiment of the present invention;

13 is a schematic flowchart of a detection method according to an embodiment of the present invention.

Detailed ways

As described in the background art, realizing real-time detection of atomic-level defect detection in the manufacturing process is one of the problems to be solved urgently in the field of semiconductor yield detection.

In order to solve the problem of real-time detection of atomic-level defects arising from new materials and technological processes in the R&D and production of advanced semiconductor manufacturing processes, the embodiments of the present invention provide a semiconductor detection device and detection method, which utilizes a circular incident incident on the surface of the wafer to be detected. Light can not only eliminate the anisotropy of the wafer to be inspected during the inspection process, but also sort out nonlinear optical signals for inspection from the first reflected light to characterize the interface state charge potential well defects, dielectric layer Inherent charge and defects or semiconductor crystal structure defects, so as to achieve non-destructive atomic-level defect detection of semiconductor devices.

In order to make the above objects, features and advantages of the present utility model more clearly understood, the specific embodiments of the present utility model are described in detail below with reference to the accompanying drawings.

1 to 9 are schematic structural diagrams of semiconductor inspection devices according to various embodiments of the present invention.

Please refer to FIG. 1, the structure of the semiconductor inspection device includes:

The wafer carrier 100 is used for carrying the wafer 101 to be inspected;

The incident light system 200 emits the first incident light 210;

the beam shaping system 300, for shaping the first incident light 210 into a first annular incident light 310, and the first annular incident light 310 is reflected by the wafer to be inspected to form a first reflected light 311;

an optical signal sorting system 400 for sorting the nonlinear optical signal 312 from the first reflected light 311;

The control system 500 is configured to acquire first defect information of the wafer to be inspected according to the nonlinear optical signal 312 .

In this embodiment, the beam shaping system 300 is used to lightly shape the first incident light 210 into the first annular incident light 310, so that the anisotropy of the nonlinear signal can be eliminated. This is because the deviation of the nonlinear optical signal comes from the azimuth angle error. The first annular incident light 310 is vertically incident on the surface of the wafer 101 to be inspected, so that the azimuth angle error becomes the superposition of several azimuth angle errors. , which eliminates the difference of azimuth errors at different positions, and the deviation of nonlinear optical signals also becomes the superposition of several azimuth errors, thereby eliminating the anisotropy of nonlinear optical signals.

In this embodiment, the azimuth angle refers to the relative angle between the incident plane and any specific direction (eg, wafer notch or specific crystal axis direction) that represents the wafer orientation.

The following will be described in detail with reference to the accompanying drawings.

The semiconductor inspection device can characterize the atomic-level defects in the wafer 101 to be inspected through the nonlinear optical signal 312, so as to realize the non-destructive acquisition of atomic-level defects or crystal defects in the wafer in real time during the process. .

Specifically, the first annular incident light 310 is incident on the to-be-measured position on the surface of the wafer 101 to be inspected, so that the material of the wafer 101 to be inspected and the light field emission of the first annular incident light 310 are mutually The nonlinear optical signal 312 in the optical response can be used to characterize the atomic-level defects in the wafer 101 to be inspected. Since the optical inspection method is used, there is no need to perform destructive inspection on the wafer 101 to be inspected, and the optical inspection can be performed at some key nodes in the process, so as to realize real-time defect discovery and timely detection Process improvement.

The nonlinear optical signal 312 includes sum frequency response (SFG), difference frequency response (DFG), second harmonic signal (SHG), third harmonic signal (THG) and higher order nonlinear optical signals.

In this embodiment, please refer to FIG. 2 , the wafer 101 to be inspected includes: a substrate 110 and a dielectric layer 111 on the surface of the substrate 110 ; in this embodiment, the material of the substrate 110 is monocrystalline silicon, so The material of the dielectric layer 111 is silicon oxide. In other embodiments, the material of the substrate 110 can also be other semiconductor materials with centrosymmetric; the material of the dielectric layer 111 can be other dielectric materials, such as silicon nitride, silicon oxynitride, high-K dielectric materials (dielectric materials) Dielectric constant greater than 3.9), low-K dielectric material (dielectric constant greater than 2.5 but less than 3.9) or ultra-low-K dielectric material (dielectric constant less than 2.5).

The nonlinear optical signal 312 can characterize the interface state charge potential trap density (Dit: interfacial trap density) at the interface between the dielectric layer 111 and the substrate 110 and the inherent charges and defects in the dielectric layer. Among them, the interface state charge potential well defects are distributed at the interface between the semiconductor and the oxide film; the intrinsic charges and defects in the dielectric layer are distributed in the dielectric layer, and the intrinsic charges and defects in the dielectric layer 111 are due to Inherent defects introduced by process factors in the film formation process of the dielectric layer 111 can also be caused by material damage caused by subsequent processes. The interface state charge potential well defects or the intrinsic charges and defects of the dielectric layer may cause deterioration of electrical properties between the dielectric layer 111 and the substrate 110 .

Specifically, since the material of the substrate 110 is single crystal silicon, and the single crystal silicon is a centrosymmetric material, when there is an interface state charge A at the interface between the dielectric layer 111 and the substrate 110 , or the dielectric layer 111 When the intrinsic charge B exists inside, the interface state charge A or the intrinsic charge B will induce a change in the space charge distribution in the substrate 110 . Once the space charge distribution in the substrate changes, it will cause the single-crystal silicon material to generate electric field-induced signals due to the destruction of the centrosymmetry. After the nonlinear optical signal 312 is coupled with the electric field-induced signal, it can reflect the change of the space charge distribution in the substrate 110 , and then characterize the interface state charge potential well defect distribution at the interface between the dielectric layer 111 and the substrate 110 . , or the intrinsic charge and defect distribution inside the dielectric layer 111 .

In one embodiment, the dielectric layer 111 is patterned. In another embodiment, the dielectric layer 111 is not patterned.

In another embodiment, please refer to FIG. 3 , the wafer 101 to be inspected includes: a substrate 120 and a semiconductor layer 121 located on the surface of the substrate 120 ; the material of the semiconductor layer 121 is compound or elemental semiconductor material; compound semiconductor Materials include gallium arsenide, gallium nitride, and silicon carbide. The nonlinear optical signal 312 can respond to crystal structure defects in the compound semiconductor material, so as to realize real-time monitoring of the crystal quality of the semiconductor layer 121 .

In this embodiment, the semiconductor layer is formed on the surface of the substrate by an epitaxial process. When a crystal structure defect is generated in the semiconductor layer by the epitaxial process, the crystal structure defect will be related to the nonlinear optical signal. The coupling 312 enables the nonlinear optical signal 312 to characterize the lattice defect or crystal uniformity defect. Wherein, the crystal structure defect includes a lattice defect or a crystal uniformity defect, and the crystal uniformity defect refers to a defect where the ordered arrangement of the crystal lattice is distorted.

In one embodiment, the semiconductor layer 121 is patterned. In another embodiment, the semiconductor layer 121 is not patterned.

Please continue to refer to FIG. 1 . In this embodiment, the incident light system 200 includes: a first light source 201 for emitting first initial incident light; and a first incident light modulation unit 202 for illuminating the first initial incident light Modulation is performed to form the first initial modulated incident light; the beam splitter 203 is used to form the first incident light 210 emitted to the beam shaping system through the first initial modulated incident light.

In this embodiment, the first light source 201 includes a laser transmitter.

4 , in this embodiment, the first incident light modulation unit 202 includes: a modulation device 220 for changing one or more of the light intensity, polarization parameter and focal length of the first initial incident light 2011; monitoring The device 221 is configured to monitor the incident light information of the first initially modulated incident light 2012 , and feed back the incident light information to the control system 500 .

The incident light information includes: power, light intensity, polarization parameters, focal length, and the like.

Please refer to FIG. 5 , the beam shaping system 300 includes a first axicon 301 for condensing the first incident light 210 to form a first condensed light 211 ; a second axicon 302 for diffusing the first incident light 210 A convergent light 211 forms the first annular incident light 310 .

In this embodiment, since the beam shaping system 300 shapes the incident light into a first annular incident light 310, when the first annular light is incident on the wafer 101 to be inspected, the nonlinear signal 312 The deviation of is no longer an error dependent on some azimuth angles, but an error dependent on all azimuth angles, so that the anisotropy of the nonlinear signal 312 is eliminated.

Continuing to refer to FIG. 5 , the focusing unit 303 is further included, the focusing unit 303 includes a lens 304 , and the focusing unit 303 focuses the first annular incident light 310 onto the surface of the wafer 101 to be inspected.

In this embodiment, the lens 304 is a separate lens; in other embodiments, the lens 305 may also be a lens group or a gradient index lens or other curved mirrors to achieve the same function.

In another embodiment, the lens 304 further includes a through hole, and the through hole passes through the lens 304 along the central axis of the lens 304 .

In this embodiment, the through holes can be used to place some components, thereby saving space.

In this embodiment, the collimated Gaussian beam is shaped into a first annular beam 310 (Bessel) beam by the beam shaping system 300 and focused onto the wafer 101 to be inspected. Although the first annular beam 310 is vertically incident on the surface of the wafer 101 to be inspected, the incident angle is not zero, and the incident angle is determined by the diameter and the focusing focal length. Therefore, the incident angle of the focused beam can be adjusted by the diameter of the first annular incident light 310 . Due to the way of vertical incidence, the beam shaping system 300 has a high degree of integration, occupies a small volume, and has good flexibility in adjusting the incident angle. At the same time, due to the first annular incident light 310, the focused spherical aberration can be greatly reduced.

In this embodiment, the nonlinear signal 312 comes from the focused first annular light beam. Since the first annular incident light 310 has a ring shape, the anisotropy from the wafer 101 to be inspected is automatically eliminated , the reason is that the signal is an integral over all azimuths, so all azimuth dependencies disappear.

其中φ表示：方位角；I表示：在所有方位角上积分后的总信号；P表示：每个方位角的信号，使得在所述待检测晶圆101旋转的时候，也不会对所述非线性信号312产生影响。At the same time, the signal changes from the original dependence on the azimuth angle I(φ)∝∣P(φ)∣ ² to the coherent superposition of all azimuth angles

Among them, φ represents: azimuth angle; I represents: the total signal integrated at all azimuth angles; P represents: the signal of each azimuth angle, so that when the wafer 101 to be inspected rotates, the Non-linear signal 312 contributes.

Please refer to FIG. 6 , the optical signal sorting system 400 includes: a filter 401 and a polarizer 402 . In this embodiment, the filter 401 is used to pass part of the first reflected light 311 with a preset wavelength range to form the first transition optical signal; the polarizer 402 is used to pass the light with a preset polarization parameter the first transition optical signal to form the nonlinear optical signal 312 . That is, the first reflected light 311 is filtered by the filter 401 first, and then passes through the polarizer 402 to filter out the nonlinear optical signal 312 having a preset polarization parameter.

Referring to FIG. 7 , in another embodiment, the polarizer 402 is used to pass a part of the first reflected light 311 with a preset polarization parameter to form a second transition optical signal; the filter 401 is used to pass The second transition optical signal having a predetermined wavelength range to form the nonlinear optical signal 312 .

Please continue to refer to FIG. 1 , in this embodiment, the control system 500 includes: an imaging operation unit 501 for acquiring the position information of the wafer to be inspected according to the imaging patterns at different positions on the surface of the wafer 101 to be inspected; first The position control unit 502 is used to move the wafer carrier 100 along the direction parallel to the reference plane XY according to the position information, and the reference plane XY (that is, the plane formed by the X coordinate and the Y coordinate) is parallel to the The surface of the wafer 101 is inspected to realize the alignment of the wafer 101 to be inspected.

Please continue to refer to FIG. 1 , in this embodiment, the semiconductor inspection apparatus further includes a wafer alignment and focusing system 600 , and the wafer alignment and focusing system 600 is used to make the first annular incident light 310 align on the surface of the wafer 101 to be inspected. Align the position to be detected and focus.

The wafer alignment and focusing system 600 includes: an imaging unit 601 for acquiring imaging patterns at different positions on the surface of the wafer 101 to be inspected; Position information, the first direction Z is perpendicular to the surface of the wafer 101 to be inspected.

After the imaging unit 601 acquires imaging patterns at different positions on the surface of the wafer 101 to be inspected, the control system 500 can acquire the position information of the wafer 101 to be inspected through the imaging patterns, and then controls the wafer carrier 100 to move to a desired position position for alignment.

In this embodiment, the control system 500 further includes: a second position control unit 503 for moving the wafer carrier 100 according to the position information of the wafer 101 to be inspected in the first direction Z.

After the sensor 602 acquires the position information of the wafer 101 to be inspected in the first direction Z, the position information is sent to the second position control unit 503, and the second position control unit 503 according to The position information in the first direction Z moves the wafer carrier 100 until the first annular incident light 310 can focus at a specified height on the surface of the wafer 101 to be inspected.

Please continue to refer to FIG. 1 and FIG. 4 , the modulation device 220 is used for adjusting the optical parameters of the initial incident light 2011 . The monitoring device 221 can monitor the parameters of the initial incident light 2011 in real time, and feed back the incident light information obtained by monitoring to the control system 500, and the control system 500 can control the modulation device according to the acquired incident light information. 220 adjusts the optical parameters of the initial incident light 2011.

Referring to FIG. 8 , the semiconductor detection apparatus further includes an optical collimation unit 305 for collimating the first reflected light, and the collimated first reflected light is incident on the optical signal sorting system 400 .

In another embodiment, referring to FIG. 9 , the semiconductor detection device further includes an optical collimation unit 305 for collimating the first reflected light, and the collimated first reflected light passes through the beam shaping system 300, The optical splitter 203 is then incident on the optical signal sorting system 400 .

Please continue to refer to FIG. 1 , in this embodiment, it further includes: a main signal acquisition system 320 for acquiring the nonlinear optical signal 312 and transmitting the nonlinear optical signal to the control system 500 .

In this embodiment, the first annular incident light 310 generates a first reflected light 311 on the surface of the wafer 101 to be inspected, and the optical signal sorting system 400 is used for sorting out non-identical signals 311 from the first reflected light 311 . The linear optical signal 312 is fed back to the main signal acquisition system 320 , and the main signal acquisition system 320 transmits the nonlinear optical signal to the control system 500 .

Please continue to refer to FIG. 1 , in this embodiment, the semiconductor inspection apparatus further includes an additional signal acquisition system 700 . The first annular incident light 310 generates additional reflected light 314 in addition to the first reflected light 311 on the surface of the wafer 101 to be inspected; the additional signal acquisition system 700 is used to acquire from the additional reflected light 314 Additional optical signals 315 are attached and transmitted to the control system 500 . The additional optical signal 315 can be used to characterize the second defect information, and the second defect information can complement the first defect information, so that the detection result is more comprehensive.

In an embodiment, the nonlinear optical signal 312 is used to characterize the first type of defects, and the additional optical signal 315 is used to characterize the second type of defects, so the nonlinear optical signal 312 and the additional optical signal 315 can realize Complementarity of test results.

In another embodiment, the additional optical signal 315 is capable of responding to both the third type defect and the fourth type defect, however, the additional optical signal 315 cannot respond to the third type defect and the fourth type defect distinguish. The nonlinear optical signal 312 can respond to the third type of defect, but cannot respond to the fourth type of defect, so that the detection result of the additional optical signal 315 can be classified by the nonlinear optical signal 312, so that the accuracy of the detection result can be improved. improve.

Please continue to refer to FIG. 1 , in this embodiment, the additional signal collection system 700 obtains additional optical signals through the additional reflected light 314 , that is, the additional signal collection system 700 and the optical signal sorting system 400 obtain additional optical signals provided by the same light source The reflected or scattered light is formed by the reflection or scattering of the incident light.

In another embodiment, the additional signal acquisition system 700 and the optical signal sorting system 400 acquire reflected or scattered light formed by reflection or scattering of incident light provided by different light sources.

The additional signal acquisition system 700 can be installed in the through hole of the lens of the focusing unit to reduce the occupied volume of the system.

The wafer carrier device 100 includes: a carrier plate for carrying the wafer 101 to be inspected; a fixing device disposed on the carrier plate for fixing the wafer 101 to be inspected on the surface of the carrier plate; a mechanical moving component for for driving the carrier plate to move. Wherein, the fixing device is a vacuum suction cup or a buckle fixed on the edge of the carrying disc. The mechanical moving component can move the carrier tray along parallel crystals to be inspected according to the signal provided by the first position control unit 502 (as shown in FIG. 1 ) or the second position control unit 503 (as shown in FIG. 1 ). The surface of the circle moves to the specified position.

10 to 11 are schematic structural diagrams of semiconductor processing apparatuses according to various embodiments of the present invention.

10, the wafer carrier 100 is placed in a process chamber 800 having a process window 801 thereon, the process window 801 is aligned with the beam shaping system 300, the first annular incident The light 310 can be vertically incident on the wafer to be inspected 101 through the process window 801 , thereby realizing real-time inspection of the wafer to be inspected 101 .

In yet another embodiment, referring to FIG. 11 , the process chamber 800 further has a reaction opening 802 , and the reaction opening 802 is used for the inflow of the reactant into the process chamber 800 and the surface of the wafer 101 to be inspected. Reactions, such as epitaxial growth, etc. occur.

The wafer carrier device 100 further includes a rotation device for driving the carrier disk to rotate. After the dielectric layer 111 is patterned, a rotating device can also be used. When the mechanical moving component drives the carrying plate to move, the rotating device drives the carrying plate to rotate along the central axis, so as to detect wafer defects. the goal of.

Referring to FIG. 12 , when the wafer carrier 100 rotates along the central axis under the action of the rotating device, the scanning trajectory diagram of the first annular incident light 310 is shown. In FIG. 12a, the straight line arrow represents the translation trajectory of the first annular incident light 310, the curved arrow represents the rotation direction of the wafer carrier 100, and the first annular incident light 310 moves along the translation trajectory on the carrier disk. Reciprocating scanning between the center and the edge of the carrier plate; Fig. 12b drives the wafer carrier device 100 to rotate along the central axis through the rotating device, and obtains the first annular incident light 310 on the surface of the wafer to be detected. A spiral scan trajectory diagram extending from the center to the edge of the carrier tray.

Correspondingly, an embodiment of the present invention further provides a method for detecting by using the above-mentioned semiconductor detection device. Please refer to FIG. 13. FIG. 13 is a schematic flowchart of a detection method according to an embodiment of the present invention, including:

Step S1, providing the wafer to be inspected; Step S2, emitting the first incident light;

Step S3, shaping the first incident light into a first annular incident light, and the first annular incident light is reflected by the wafer to be inspected to form a first reflected light;

Step S4, acquiring the first reflected light, and sorting out nonlinear optical signals from the first reflected light;

Step S5, acquiring first defect information of the wafer to be inspected according to the nonlinear optical signal.

The following will be described in detail with reference to the accompanying drawings.

Please refer to FIG. 1 , FIG. 2 and FIG. 6 in conjunction with the wafer 101 to be inspected.

In this embodiment, the wafer 101 to be inspected includes: a substrate 110 and a dielectric layer 111 on the surface of the substrate 110 ; in this embodiment, the material of the substrate 110 is monocrystalline silicon, and the dielectric layer 111 The material is silicon oxide. In other embodiments, the material of the substrate 110 can also be other semiconductor materials with centrosymmetric; the material of the dielectric layer 111 can be other dielectric materials, such as silicon nitride, silicon oxynitride, high-K dielectric materials (dielectric materials) Dielectric constant greater than 3.9), low-K dielectric material (dielectric constant greater than 2.5 but less than 3.9) or ultra-low-K dielectric material (dielectric constant less than 2.5).

Wherein, the interface between the dielectric layer 111 and the substrate 110 has an interface state charge potential trap density (Dit: interfacial trap density); or, the dielectric layer has inherent charges and defects. The interface state charge potential well defects are distributed at the interface between the semiconductor and the oxide film; the intrinsic charges and defects in the dielectric layer 111 are distributed in the dielectric layer 111, and the intrinsic charge defects in the dielectric layer 111 are caused by the dielectric layer 111. Inherent defects introduced by process factors in the film formation process of the layer 111 can also be caused by material damage caused by subsequent processes. The interface state charge potential well defects or the intrinsic charges and defects of the dielectric layer 111 may cause deterioration of electrical properties between the dielectric layer 111 and the substrate 110 .

In another embodiment, please refer to FIG. 1 , FIG. 3 and FIG. 7 , the wafer 101 to be inspected includes: a substrate 120 and a semiconductor layer 121 on the surface of the substrate 120 ; the material of the semiconductor layer 121 is a compound Or elemental semiconductor materials; compound semiconductor materials include gallium arsenide, gallium nitride, and silicon carbide; and the formation process of the semiconductor layer includes an epitaxy process.

4 and 1 in combination, the first incident light 210 is emitted.

Referring to FIG. 5 and FIG. 1 , the first incident light 210 is shaped into a first annular incident light 310 , and the first annular incident light 310 is reflected by the wafer 101 to be inspected to form a first reflected light 311 .

Referring to FIG. 8 and FIG. 1 in combination, the first reflected light 311 is acquired, and the nonlinear optical signal 312 is sorted out from the first reflected light 311 .

In another embodiment, referring to FIG. 9 and FIG. 1 in combination, the first reflected light 311 is acquired, and the nonlinear optical signal 312 is sorted out from the first reflected light 311 .

In yet another embodiment, referring to FIG. 1 and FIG. 10 , the wafer 101 to be inspected is placed in the process chamber 800 , and the process chamber 800 has a process window 801 , and the process window 801 is connected to the process chamber 800 . The beam shaping system 300 is aligned, the first annular incident light 310 can be vertically incident on the wafer 101 to be inspected through the process window 801, the first reflected light 311 is obtained, and reflected from the first The nonlinear optical signal 312 is sorted out from the light 311, thereby realizing real-time detection of the wafer 101 to be detected.

In yet another embodiment, referring to FIG. 1 and FIG. 11 , the process chamber 800 further has a reaction opening 802 , and the reaction opening 802 is used for the inflow of the reactant into the process chamber 800 , and the reaction opening 802 is connected with the crystal to be detected. The surface of the circle 101 reacts, such as epitaxial growth, etc., the process window 801 is aligned with the beam shaping system 300, and the first annular incident light 310 can pass through the process window 801. On the circle 101 , the first reflected light 311 is acquired, and the nonlinear optical signal 312 is sorted out from the first reflected light 311 , so as to implement monitoring of the epitaxial growth of the wafer 101 to be inspected. The nonlinear optical signal 312 characterizes the atomic-level defects in the wafer 101 to be inspected, thereby realizing non-destructive acquisition of atomic-level defects or crystal defects in the wafer in real time during the process.

Specifically, the first annular incident light 310 is incident on the to-be-measured position on the surface of the wafer 101 to be inspected, so that the material of the wafer 101 to be inspected and the light field emission of the first annular incident light 311 are mutually The nonlinear optical signal 312 in the optical response can be used to characterize the atomic-level defects in the wafer 101 to be inspected. Since an optical inspection method is used, there is no need to perform destructive inspection on the wafer 101 to be inspected, and the optical inspection can be carried out at key nodes in the process, so that defects can be found in real time and the process can be carried out in time. Improve.

In this embodiment, please refer to FIG. 2 , the wafer 101 to be inspected includes a substrate 110 and a dielectric layer 111 on the surface of the substrate 110 .

The nonlinear optical signal 312 can characterize the interface state charge potential trap density (Dit: interfacial trap density) at the interface between the dielectric layer 111 and the substrate 110 and the inherent charges and defects in the dielectric layer. Among them, the interface state charge potential well defects are distributed at the interface between the semiconductor and the oxide film; the intrinsic charges and defects in the dielectric layer are distributed in the dielectric layer, and the intrinsic charges and defects in the dielectric layer 111 are due to Inherent defects introduced by process factors in the film formation process of the dielectric layer 111 can also be caused by material damage caused by subsequent processes. The interface state charge potential well defects or the intrinsic charges and defects of the dielectric layer may cause deterioration of electrical properties between the dielectric layer 111 and the substrate 110 .

Specifically, since the material of the substrate 110 is single crystal silicon, and the single crystal silicon is a centrosymmetric material, when there is an interface state charge A at the interface between the dielectric layer 111 and the substrate 110 , or the dielectric layer 111 When the intrinsic charge B exists inside, the interface state charge A or the intrinsic charge B will induce a change in the space charge distribution in the substrate 110 . Once the space charge distribution in the substrate changes, it will cause the single-crystal silicon material to generate electric field-induced signals due to the destruction of the centrosymmetry. After the nonlinear optical signal 312 is coupled with the electric field-induced signal, it can reflect the change of the space charge distribution in the substrate 110, and then characterize whether there is an interface state charge at the interface between the dielectric layer 111 and the substrate 110, or Whether there is intrinsic charge inside the dielectric layer 111 .

In another embodiment, please refer to FIG. 3 , the wafer 101 to be inspected includes: a substrate 120 and a semiconductor layer 121 located on the surface of the substrate 120 ; the material of the semiconductor layer 121 is compound or elemental semiconductor material; compound semiconductor Materials include gallium arsenide, gallium nitride, and silicon carbide.

The nonlinear optical signal 312 can respond to crystal structure defects in the compound semiconductor material, so as to realize real-time monitoring of the crystal quality of the semiconductor layer 121 .

Referring to FIG. 12 , by the drive of the mechanical moving assembly, the carrier plate is moved in a straight line in a direction parallel to the surface of the wafer to be detected, so that the incident point of the first annular incident light is at the radius of the carrier plate. Movement between the center and the edge; when driven by the mechanical moving component, the carrier plate is driven to rotate along the center axis of the carrier plate by a rotating device, and a scanning trajectory diagram of the first annular incident light 310 is obtained. In FIG. 12a, the straight line arrow represents the translation trajectory of the first annular incident light 310, the curved arrow represents the rotation direction of the wafer carrier 100, and the first annular incident light 310 moves along the translation trajectory on the carrier disk. Reciprocating scanning between the center and the edge of the carrier plate; Fig. 12b drives the wafer carrier device 100 to rotate along the central axis through the rotating device, and obtains the first annular incident light 310 on the surface of the wafer to be detected. A spiral scan trajectory diagram extending from the center to the edge of the carrier tray.

In this embodiment, the semiconductor layer is formed on the surface of the substrate by an epitaxial process. When a crystal structure defect is generated in the semiconductor layer by the epitaxial process, the crystal structure defect will be related to the nonlinear optical signal. The coupling 312 enables the nonlinear optical signal 312 to characterize the lattice defect or crystal uniformity defect. Wherein, the crystal structure defect includes a lattice defect or a crystal uniformity defect, and the crystal uniformity defect refers to a defect where the ordered arrangement of the crystal lattice is distorted.

With reference to FIG. 6 and FIG. 1 , the first defect information of the wafer 101 to be inspected is acquired according to the nonlinear optical signal 312 .

In this embodiment, as shown in FIG. 2 , the wafer 101 to be inspected includes: a substrate 110 and a dielectric layer 111 on the surface of the substrate 110 ; the first defect information includes the interface between the substrate and the dielectric layer The interface electrical property defect at the interface; the interface electrical property defect includes: the interface state charge potential well defect, the intrinsic charge distribution and defect of the dielectric layer, and the substrate semiconductor doping concentration.

In another embodiment, as shown in FIG. 3 , the wafer 101 to be inspected includes: a substrate 120 and a semiconductor layer 121 located on the surface of the substrate 120 ; the first defect information includes: crystal structure defects, inside the semiconductor layer Stress distribution and epitaxial thickness of semiconductor layers.

The first annular incident light 310 generates additional reflected light 314 in addition to the first reflected light 311 on the surface of the wafer 101 to be inspected; the detection method further includes: obtaining additional optical light from the additional reflected light 314 signal 315 , and obtain second defect information according to the additional optical signal 315 . The second defect information is complementary to the first defect information, so that the detection result is more comprehensive.

In this embodiment, the additional optical signal 315 and the nonlinear optical signal 312 are both formed by reflecting the first annular incident light 310 provided by the first light source 201 .

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the claims.

Claims (20)

1. The semiconductor detection device of claim 1 or , comprising:

   the wafer bearing device is used for bearing the wafer to be detected;

   an incident light system emitting th incident light;

   the light beam shaping system is used for shaping th incident light into th annular incident light, and the th annular incident light is reflected by the wafer to be detected to form th reflected light;

   an optical signal sorting system for sorting out nonlinear optical signals from the th reflected light;

   and the control system is used for acquiring th defect information of the wafer to be detected according to the nonlinear optical signal.
2. 2. The semiconductor inspection device of claim 1, wherein said beam shaping system comprises an th axicon for converging said th incident light to form a th converging light and a second axicon for diverging said th converging light to form said th annular incident light.
3. 3. The semiconductor inspection device of claim 1, further comprising a focusing unit, the focusing unit comprising a lens.
4. 4. The semiconductor inspection device of claim 3, wherein the lens further comprises a through hole that extends through the lens along a central axis of the lens.
5. 5. The semiconductor test device of claim 1, wherein the nonlinear optical signal comprises a second harmonic signal, a third harmonic signal, a sum frequency response signal, and a difference frequency response signal.
6. 6. The semiconductor detection device as claimed in claim 1, further comprising a wafer alignment focusing system, wherein the wafer alignment focusing system comprises an imaging unit for acquiring imaging patterns of different positions on the surface of the wafer to be detected, and a sensor for acquiring position information of the wafer to be detected in an th direction, wherein the th direction is perpendicular to the surface of the wafer to be detected.
7. 7. The semiconductor detection device of claim 6, wherein the control system comprises an imaging operation unit for obtaining position information of the wafer to be detected according to imaging patterns at different positions on the surface of the wafer to be detected, and an th position control unit for moving the wafer carrying device along a direction parallel to a reference plane according to the position information so as to align th annular incident light on the surface of the wafer to be detected, wherein the reference plane is parallel to the surface of the wafer to be detected.
8. 8. The semiconductor detection device as claimed in claim 6, wherein the control system comprises a second position control unit for moving the wafer carrier device according to the position information in the th direction to focus the th ring-shaped incident light on the surface of the wafer to be detected.
9. 9. The semiconductor detection device as claimed in claim 1, wherein the incident light system comprises an th light source for emitting th initial incident light, a th incident light modulation unit for modulating the th initial incident light to form th initial modulated incident light, and a beam splitter for forming the th incident light emitted to the wafer to be detected by modulating the th initial incident light.
10. 10. The semiconductor test device of claim 9, wherein said th light source comprises a laser emitter.
11. 11. The semiconductor detection device according to claim 1, further comprising an optical collimating unit for collimating the th reflected light, wherein the collimated th reflected light is incident to the optical signal sorting system.
12. 12. The semiconductor detection device according to claim 9, further comprising an optical collimating unit for collimating the th reflected light, wherein the collimated th reflected light is incident on the optical signal sorting system after passing through the beam shaping system and the beam splitter, respectively.
13. 13. The semiconductor inspection device of claim 1, wherein the optical signal sorting system comprises a filter for passing a portion of the th reflected light having a predetermined wavelength range to form a th transition optical signal, and a polarizer for passing the th transition optical signal having a predetermined polarization parameter to form the nonlinear optical signal.
14. 14. The semiconductor inspection device of claim 1, wherein said optical signal sorting system comprises a polarizer for passing a portion of the reflected light having a predetermined polarization parameter to form a second transition optical signal, and an optical filter for passing said second transition optical signal having a predetermined wavelength range to form said nonlinear optical signal.
15. 15. The semiconductor inspection device of claim 1, further comprising: and the main signal acquisition system is used for acquiring the nonlinear optical signal and transmitting the nonlinear optical signal to the control system.
16. 16. The semiconductor test device as claimed in claim 1, further comprising an additional signal acquisition system for acquiring an additional optical signal from said -th reflected light and transmitting said additional optical signal to said control system.
17. 17. The semiconductor inspection apparatus of claim 1, wherein the wafer carrier comprises: the bearing plate is used for bearing the wafer to be detected; the fixing device is arranged on the bearing disc and used for fixing the wafer to be detected on the surface of the bearing disc; and the mechanical moving assembly is used for driving the bearing disc to move along the surface parallel to the wafer to be detected.
18. 18. The semiconductor inspection apparatus of claim 17, wherein the wafer carrier further comprises: and the rotating device is used for driving the bearing disc to rotate along the central axis of the bearing disc.
19. 19. The semiconductor test device of claim 17, wherein the fixing means is a vacuum chuck or a snap-fit to an edge of the carrier plate.
20. 20, semiconductor processing apparatus, comprising:

    a process chamber having a process window thereon;

    the semiconductor inspection device of any one of claims 1 to 19, , wherein the incident light system, the beam shaping system, the optical signal sorting system, and the control system are located outside the process chamber, and the th ring of incident light is vertically incident on the wafer to be inspected through the process window.

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